US3742230A - Soft x-ray mask support substrate - Google Patents

Soft x-ray mask support substrate Download PDF

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Publication number
US3742230A
US3742230A US00267672A US3742230DA US3742230A US 3742230 A US3742230 A US 3742230A US 00267672 A US00267672 A US 00267672A US 3742230D A US3742230D A US 3742230DA US 3742230 A US3742230 A US 3742230A
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silicon
soft
support structure
membrane
wafer
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Expired - Lifetime
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US00267672A
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English (en)
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D Spears
H Smith
E Stern
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Massachusetts Institute of Technology
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Massachusetts Institute of Technology
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Definitions

  • ABSTRACT A soft X-ray mask support substrate including a thick peripheral support structure; a thin, taut membrane, transparent to soft X-rays and carried by the support structure covering the area within the periphery; and a soft X-ray absorber layer arranged in a predetermined pattern on the membrane within the periphery of the support structure.
  • This invention relates to a soft X-ray support substrate, and more particularly to such a substrate having a taut membrane transparent to soft X-rays for supporting a pattern in soft X-ray absorber material.
  • Soft X-ray printing has been proposed as a technique for replicating sub-micron planar patterns, see Soft X-ray Lithographic Apparatus and Process, filed Jan. 15, 1972, Ser. No. 217,902; typically the pattern is generated by a scanning electron microscope.
  • Soft X-ray exposure masks have been made for acoustic surface wave transducer patterns with 1.3 micron electrode spacing and have been successfully replicated.
  • soft X-ray lithography has shown a resolution capability greater than that of ordinary photolithography and comparable to the highly sophisticated scanning electron microscope techniques.
  • the simplicity and low cost of soft X-ray lithography indicate that it could have a significant impact on ultra-high resolution device fabrication in the future.
  • Beryllium the solid material most transparent to soft X-rays, appears well suited for the supporting portion of the mask.
  • the thinnest foil of beryllium commercially available was approximately 12 microns thick. The surface of this foil was irregular, having numerous pits of one micron depth, and was not suitable as a substrate on which high resolution, submicron patterns must be constructed in an absorber layer.
  • beryllium is attacked by most acids (weak as well as strong) and by alkaline solutions, so a very serious corrosion and chemical compatibility problem exists with this material. Also beryllium dust is very toxic, so elaborate safety precautions must be taken if the material is cut or machined.
  • the invention results from the realization that the dimpling or sagging problem would be solved by producing a tension in the membrane that would keep it taut and that such a tension could be produced in a thin silicon'membrane supported on a thicker silicon support structure by doping the membrane with boron or phosphorous which has a smaller covalent bond radius than silicon and therefore causes the membrane to shrink relative to the surrounding support structure of undoped silicon and further that such a tension could also be produced in thin silicon membrane supported on a thicker silicon support structure doped with arsenic, gallium, antimony or aluminum each of which has a larger covalent bond radius than silicon and therefore causes the support structure to expand relative to the undoped silicon membrane and stretch the membrane.
  • the invention features a soft X-ray mask substrate including a wafer of a first material of which a thin layer is doped with a small percentage of a second material which contracts that thin layer of the first material slightly and reduces the attack rate of an etchant on the first material enough to create a thin, taut membrane of the doped material, transparent to soft X-rays to function as a pattern window and yet leave sufficient amounts of the first material in the remaining portion of the first material about the pattern window to act as a support structure.
  • a soft X-ray mask substrate can be constructed using a thick layer of a first material doped with a small percentage of a second material which expands the first material slightly and on which is deposited a thin layer of the first material such that an etchant may selectively remove enough of the doped first material to create a thin, taut membrane of the undoped first material, transparent to soft X-rays to function as a pattern window, and yet leave sufficient amounts of the doped first material about the pattern window to act as a support structure.
  • FIG. 1 is an elevational, schematic view of an initial step in the fabrication of a substrate according to this invention for supporting a soft X-ray mask.
  • FIG. 2 is an elevational schematic view similar to that shown in FIG. 1 of a subsequent step in the fabrication of a soft X-ray mask support substrate according to this invention.
  • FIG. 3 is an elevational schematic view similar to that of FIG. 2 of a further step in the fabricating of a soft X-ray mask support substrate according to this invention.
  • FIG. 4 is an elevational schematic view similar to that of FIG. 3 of a completed soft X-ray mask support substrate according to this invention.
  • FIG. 5 is a elevational, schematic view of an initial step in the fabrication of an alternative substrate according to this invention for supporting a soft X-ray mask.
  • FIG. 6 is an elevational, schematic view similar to that of FIG. 5 of a subsequent step in the fabrication of FIG. 7 is an elevational, schematic view similar to 1 that of FIG. 6 of a further step in the fabrication of an alternative substrate according to this invention for supporting a soft X-ray mask.
  • FIG. 8 is an elevational, schematic view similar to that of FIG. 7 of a completed soft X-ray mask support substrate according to this invention.
  • FIG. 9 is a schematic, axonometric view of a soft X-ray mask support substrate with a plurality of pattern windows and membranes.
  • a support substrate 6 for a soft X-ray mask 8 may be constructed, FIG. 1, using a single silicon wafer 10 of the N type or lightly doped P type approximately 200 microns in thickness. Wafer 10 is heavily diffused with boron such that a concentration of about 2 X10" cm exists at a depth of 3 microns from the surface forming boron diffusion layer 12.
  • Silicon dioxide layers 14 and 16 each about 0.1 micron thick, FIG. 2, are then grown on the top and bottom of wafer 10. Silicon dioxide layers 14 and 16 function to provide a protective layer which prevents undesired chemical attack to the silicon. Following this the desired soft X-ray mask pattern 18, FIG. 3, is fabricated in pattern area 19 on silicon dioxide layer 16 using state of the art methods such as scanning electron beam technoogy or photolithographic techniques. Mask pattern 18 may be formed of gold or any other good soft X-ray absorber. In FIG. 3 a gold layer 20 0.3 micron thick is used and an intermediate layer 22 of chrominum 0.03 micron thick is used to improve the adherence between the gold layer 20 and the silicon dioxide layer 16. Oppositethe mask pattern 18 an opening 24 is etched in silicon dioxide layer.14 using an etchant such as buffered hydrofluoric acid which attacks the silicon dioxide layer 14 but not the silicon of wafer 10.
  • an etchant such as buffered hydrofluoric acid which attacks the silicon dioxide layer 14 but not the silicon of wafer
  • the wafer 10 is placed in a l 15C solution of 68 ml ethylene diamine, 12g pyrocatechol, and 32 ml water for about 1 15 hours.
  • the solution etches away the bulk of the silicon beneath opening 24 in silicon dioxide layer 14 and creates a pattern window 26, FIG. 4, in the silicon wafer 10 which corresponds to the pattern area 18 which has been created on the opposite side of wafer 10 in the soft X-ray absorbing gold layer 20.
  • This etchant only etches as far as the boron diffused layer 12 and no farther. In addition this etchant also does not attack the chromium or the gold portions.
  • membrane 28 is formed from the portion of the boron diffused layer 12 which extends across pattern window 26.
  • Membrane 28 is relatively thin i.e. approximately 3 microns in thickness corresponding in thickness to the boron diffused layer 12.
  • membrane 28 is quite transparent to the soft X-rays which will be used to expose substrates through pattern area 18 of mask 8.
  • this fabrication technique also introduces a tautness in membrane 28 because of the action of the boron doping in the medium of the silicon: a tension arises because of the slight decrease of the lattice constant produced by boron doping because boron has a smaller covalent bond radius than that of silicon. As a result the membrane 28 shrinks and becomes taut relative to the rest of the silicon substrate which is not doped with boron.
  • this tautness or tension membrane 28 provides a very flat, rigid substrate for the gold absorber layer 20'and its intermediate layer 22; an added advantage of this technique is that the etchant which is used etches much more rapidly in the crystal direction l00 than it does in the direction 1 1 l and so the etching process moves much more quickly in the direction from silicon dioxide layer 14 towards boron diffused layer 12 than it does in the lateral direction transverse to that path so that window 26 is produced in an area beneath opening 24 without any serious undercutting at the sides of window 26 beneath the remaining portions of silicon dioxide layer 14. In fact the etching process provides sloping walls 32 and 34 which slant inwardly in window 26. A mask approximately 1 inch square having 49, 5 um thick pattern windows each 60 mils square has been made with no sagging of the membrane.
  • Pattern 18 may be any type of micron-miniature circuit or system such as electronic circuits or micro sound circuits.
  • Substrate 6 has a number of advantages: silicon is highly resistant to corrosion and since silicon technology is well developed high quality materials meeting precise specifications may be easily obtained. Further, since the entire substrate 6 including the support structure 30 and membrane 28 are made from the same single crystal, no adhesion problem exists and temperature changes will not distort membrane 28.
  • a support substrate 6 for a soft X-ray mask 8' may be constructed, FIG. 5, using a single crystal silicon wafer 10' approximately 200 microns in thickness. Wafer 10 is heavily diffused with arsenic to a concentration of about 10" atoms/cm.
  • a three micron epitaxial layer 40, FIG. 6, of pure silicon is grown on one surface and layers 14 and 16' of silicon nitride about one tenth of a micron thick are provided on both surfaces. Silicon nitride layers 14,
  • FIG. 7 is fabricated in pattern area 19' of silicon nitride layer 16' using state of the art methods such as scanning electron beam lithograph or photoiithographic techniques.
  • Mask pattern 18' may be formed of gold or any other good soft X-ray absorber. In FIG. 7 a gold layer 20 three tenths of a micron thick is used.
  • an opening 24' is etched in the silicon nitride layer 14' using an etchant such as concentrated hydrofluoric acid which attacks the silicon nitride layer 14' but not the silicon of wafer
  • an etchant such as concentrated hydrofluoric acid which attacks the silicon nitride layer 14' but not the silicon of wafer
  • the wafer 10' is placed in a solution of one part hydrofluoric acid, three parts nitric acid and 10 parts acetic acid for about one and one half hours.
  • This solution etches away the bulk of the arsenic doped silicon beneath opening 24 in silicon nitride layer 14 and creates a pattern window 26, FIG. 8, in the silicon wafer .10 which corresponds to the pattern area 18 which has been created on the opposite side of wafer 10' in the soft X-ray absorbing gold layer 20'.
  • this fabrication technique also introduces a tautness in membrane 28' because of the action of the arsenic doping in the medium of the silicon: a tension arises because of the slight increase of the .lattice constant produced by arsenic doping because arsenic has a largercovalent bond radius than that of silicon.
  • the support structure 30' expands relative to the silicon layer 40 which is not doped with arsenic and causes membrane 28' to become taut. Because of this tautness or tension membrane 28' provides a very flat, rigid substrate for the gold absorber layer 20'.
  • substrate 6" roughly 1 inch square may contain 40 membranes 28" and forty pattern windows 26" each of which is roughly 65 mils square.
  • a soft X-ray support substrate comprising: a thick silicon peripheral support structure; and a thin, taut, silicon membrane transparent to soft X-rays and carried by said support structure covering the area within the periphery of said support structure for carrying a soft X-ray absorber layer arranged in a predetermined pattern on said membrane within said periphery of said support structure; said membrane being doped with a material having a smaller covalent bond radius than silicon to shrink said membrane to produce tension in it and make it taut.
  • a soft X-ray support substrate comprising: a thick silicon peripheral support structure; and a thin, taut, silicon membrane transparent to soft X-rays and carried by said support structure covering the area within the periphery of said support structure for carrying a soft X-ray absorber layer arranged in a predetermined pattern on said membrane within said periphery of said support structure; said membrane being doped with boron having a smaller covalent bond radius than silicon to shrink said membrane to produce tension in it and make it taut.
  • a soft X-ray support substrate comprising: a thick silicon peripheral support structure; and a thin, taut, silicon membrane transparent to soft X-rays and carried by said support structure covering the area within the periphery of said support structure for carrying a soft X-ray absorber layer arranged in a predetermined pattern on said membrane within said periphery of said support structure; said membrane being doped with phosphorous having a smaller covalent bond radius than silicon to shrink said membrane to produce tension in it and make it taut.
  • a soft X-ray support substrate comprising: a thick silicon peripheral support structure, and a thin, taut silicon membrane transparent to soft X-rays and carried by said support structure covering the area within the periphery of said support structure for carrying a soft X-ray absorber layer arranged in a predetermined pattern on said membrane within said periphery of said support structure; said support structure being doped with a material having a larger covalent bond radius than silicon to expand said support structure and produce tension in said membrane making it taut.
  • a soft X-ray support substrate comprising: a thick silicon peripheral support structure, and a thin, taut silicon membrane transparent to soft X-rays and carried by said support structure covering the area within the periphery of said support structure for carrying a soft X-ray abosrber layer arranged in a predetermined pattern on said membrane within said periphery of said support structure; said support structure being doped with anitmony having a larger covalent bond radius than silicon to expand said support structure and produce tension in said membrane making it taut.
  • a soft X-ray support substrate comprising: a thick silicon peripheral support structure, and a thin, taut silicon membrane transparent to soft X-rays and carried by said support structure covering the area within the periphery of said support structure for carrying a soft X-ray absorber layer arranged in a predetermined pattern on said membrane within said periphery of said support'structure; said support structure being doped with gallium having a larger covalent bond radius than silicon to expand said support structure and produce tension in said membrane making it taut.
  • a soft X-ray support substrate comprising: a thick silicon peripheral support structure, and a thin, taut silicon membrane transparent to soft X-rays and carried by said support structure covering the area within the periphery of said support structure for carrying a soft X-ray absorber layer arranged in a predetermined pattern on said membrane within said periphery of said support structure; said support structure being doped with aluminum having a larger covalent bond radius than silicon to expand said support structure and produce tension in said membrane making it taut.
  • a method of making a soft X-ray mask support substrate comprising: doping a first surface of a silicon substrate with boron toa predetermined thickness to shrink that doped portion of said silicon substrate; providing an etch resistant layer on the second surface of said substrate except in the area corresponding to the area on the first surface for carrying a predetermined pattern in soft X-ray absorber material; and subjecting the exposed said area of said second surface to an etchant which attacks the silicon of the support substrate and which is ineffective in etching the boron doped silicon and the etch resistant layer to create a window in the silicon substrate covered by a membrane formed from the boron doped silicon and kept taut by the shrinking of the boron doped silicon.
  • a method of making a soft X-ray mask support substrate comprising: doping a first surface of a silicon substrate with phosphorous to a predetermined thickness to shrink that doped portion of said silicon substrate; providing an etch resistant layer on the second surface of said substrate except in the area corresponding to the area on the first surface for carrying a predetermined pattern in soft X-ray absorber material; and subjecting the exposed said area of said second surface to an etchant which attacks the silicon of the support substrate and which is ineffective in etching the phosphorous doped silicon and the etch resistant layer to create a window in the silicon substrate covered by a membrane formed from the phosphorous doped silicon and kept taut by the shrinking of the phosphorous doped silicon.
  • a method of making a soft X-ray support substrate comprising:
  • a method of making a soft X-ray support substrate comprising:
  • a method of making a soft X-ray support substrate comprising:
  • a method of making a soft X-ray support substrate comprising:

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • ing And Chemical Polishing (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • X-Ray Techniques (AREA)
US00267672A 1972-06-29 1972-06-29 Soft x-ray mask support substrate Expired - Lifetime US3742230A (en)

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Cited By (44)

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US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
US3916200A (en) * 1974-09-04 1975-10-28 Us Energy Window for radiation detectors and the like
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
FR2330036A1 (fr) * 1975-10-28 1977-05-27 Hughes Aircraft Co Cache absorbant les particules chargees et son procede de realisation
US4112307A (en) * 1976-02-17 1978-09-05 Polymer-Physik Gmbh & Co. Kg Electron beam source with an electron exit window connected via a window flange
US4152601A (en) * 1976-10-19 1979-05-01 Nippon Telegraph & Telephone Public Corporation X-ray lithography mask and method for manufacturing the same
US4170512A (en) * 1977-05-26 1979-10-09 Massachusetts Institute Of Technology Method of manufacture of a soft-X-ray mask
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4198263A (en) * 1976-03-30 1980-04-15 Tokyo Shibaura Electric Co., Ltd. Mask for soft X-rays and method of manufacture
US4215192A (en) * 1978-01-16 1980-07-29 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4218503A (en) * 1977-12-02 1980-08-19 Rockwell International Corporation X-ray lithographic mask using rare earth and transition element compounds and method of fabrication thereof
EP0019779A2 (de) * 1979-06-01 1980-12-10 International Business Machines Corporation Schattenwurfmaske zum Strukturieren von Oberflächenbereichen und Verfahren zu ihrer Herstellung
US4254174A (en) * 1979-03-29 1981-03-03 Massachusetts Institute Of Technology Supported membrane composite structure and its method of manufacture
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4349621A (en) * 1981-04-13 1982-09-14 General Electric Company Process for X-ray microlithography using thin film eutectic masks
JPS57198461A (en) * 1981-05-18 1982-12-06 Philips Nv Radiant lithographic mask and manufacture thereof
US4370556A (en) * 1979-12-27 1983-01-25 Rudolf Sacher Gesellschaft M.B.H. Self-supporting mask, method for production as well as use of same
US4384919A (en) * 1978-11-13 1983-05-24 Sperry Corporation Method of making x-ray masks
US4454209A (en) * 1980-12-17 1984-06-12 Westinghouse Electric Corp. High resolution soft x-ray or ion beam lithographic mask
US4468282A (en) * 1982-11-22 1984-08-28 Hewlett-Packard Company Method of making an electron beam window
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
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US4555460A (en) * 1982-09-01 1985-11-26 U.S. Philips Corporation Mask for the formation of patterns in lacquer layers by means of X-ray lithography and method of manufacturing same
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US4576832A (en) * 1982-12-30 1986-03-18 International Business Machines Corporation Self-aligning mask
JPS62216325A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd Ｘ線マスクの製造方法
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US4855197A (en) * 1986-05-06 1989-08-08 International Business Machines Corporation Mask for ion, electron or X-ray lithography and method of making it
US5096791A (en) * 1988-12-30 1992-03-17 Technion Research And Development Foundation, Ltd. Method for preparation of mask for x-ray lithography
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US5146481A (en) * 1991-06-25 1992-09-08 Diwakar Garg Diamond membranes for X-ray lithography
EP0542265A1 (de) * 1991-11-15 1993-05-19 Canon Kabushiki Kaisha Röntgenstrahlmaskenstruktur und -belichtungsverfahren sowie damit hergestelltes Halbleiterbauelement und Herstellungsverfahren für die Röntgenstrahlmaskenstruktur
US5491331A (en) * 1994-04-25 1996-02-13 Pilot Industries, Inc. Soft x-ray imaging device
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US6478974B1 (en) * 1996-06-24 2002-11-12 The Regents Of The University Of California Microfabricated filter and shell constructed with a permeable membrane
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US3921916A (en) * 1974-12-31 1975-11-25 Ibm Nozzles formed in monocrystalline silicon
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JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
JPS5944102U (ja) * 1982-05-14 1984-03-23 株式会社三英社製作所 高圧キヤビネツト型開閉装置
DE3338717A1 (de) * 1983-10-25 1985-05-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie
JPH0473765A (ja) * 1990-07-16 1992-03-09 Toshiba Corp Ｘ線透過膜およびその製法

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Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
US3916200A (en) * 1974-09-04 1975-10-28 Us Energy Window for radiation detectors and the like
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
FR2330036A1 (fr) * 1975-10-28 1977-05-27 Hughes Aircraft Co Cache absorbant les particules chargees et son procede de realisation
US4112307A (en) * 1976-02-17 1978-09-05 Polymer-Physik Gmbh & Co. Kg Electron beam source with an electron exit window connected via a window flange
US4198263A (en) * 1976-03-30 1980-04-15 Tokyo Shibaura Electric Co., Ltd. Mask for soft X-rays and method of manufacture
US4152601A (en) * 1976-10-19 1979-05-01 Nippon Telegraph & Telephone Public Corporation X-ray lithography mask and method for manufacturing the same
US4170512A (en) * 1977-05-26 1979-10-09 Massachusetts Institute Of Technology Method of manufacture of a soft-X-ray mask
US4218503A (en) * 1977-12-02 1980-08-19 Rockwell International Corporation X-ray lithographic mask using rare earth and transition element compounds and method of fabrication thereof
US4215192A (en) * 1978-01-16 1980-07-29 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
WO1980000634A1 (en) * 1978-09-13 1980-04-03 Western Electric Co Radiation mask structure
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4384919A (en) * 1978-11-13 1983-05-24 Sperry Corporation Method of making x-ray masks
US4536882A (en) * 1979-01-12 1985-08-20 Rockwell International Corporation Embedded absorber X-ray mask and method for making same
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Also Published As

Publication number Publication date
DE2333787A1 (de) 1974-01-17
DE2333787B2 (de) 1977-10-20
JPS5142469B2 (de) 1976-11-16
FR2202425B1 (de) 1976-05-28
FR2202425A1 (de) 1974-05-03
JPS4959575A (de) 1974-06-10
DE2333787C3 (de) 1978-06-15

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