US3719582A - Ion source for slow-ion sputtering - Google Patents

Ion source for slow-ion sputtering Download PDF

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Publication number
US3719582A
US3719582A US00080972A US3719582DA US3719582A US 3719582 A US3719582 A US 3719582A US 00080972 A US00080972 A US 00080972A US 3719582D A US3719582D A US 3719582DA US 3719582 A US3719582 A US 3719582A
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US
United States
Prior art keywords
anode
sputtering
ion
ion source
slow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00080972A
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English (en)
Inventor
N Hansen
W Littmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
Original Assignee
US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US3719582A publication Critical patent/US3719582A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Definitions

  • the invention relates to an ion source for slow-ion sputtering, in which the ions are produced in a non-selfiiustlained discharge occurring at least partly in a magnetic
  • the filament cathode of the discharge is arranged in the gas supply chamber which communicates through a small orifice with the sputtering space, where the anode is accommodated.
  • the anode surrounds the material to be sputtered, the target.
  • the objects to be sputtered, the substrate are disposed at the side of the discharge path around the same. In front of the anode in the discharge space a magnetic field of a few hundred gauss prevails in parallel to the discharge path.
  • the anode voltage of the discharge is stated to be 60 v.
  • a sputtering arrangement in which the ions emanating from an ion source are oriented by an axial magnetic field to the sputtering plates.
  • the ions source comprises a magnetic lens for guiding the ions.
  • the filament cathode of the ion source is located, however, in a space free of a magnetic field.
  • the invention has for its object to provide an ion source for slow-ion sputtering, in which only ions having low primary energies are formed and high ion flows are obtained.
  • the anode is formed, in accordance with the invention, by an open cylindrical sheath accommodating at one end the filament cathode, while in the discharge path between the anode and the cathode prevails a magnetic field of a few hundred gauss in an axial direction relative to the anode.
  • a very intensive discharge is produced by anode voltages of at the most 30 to 40 v. at an argon pressure of about 10" torr, said discharge being of the order of 10 A. in accordance with the dimensions.
  • the plasma of this discharge extends from the open end of the anode opposite the cathode in the vacuum space and from this plasma the ions having primary energies always at the most equal to the anode voltage, i.e. 30 to 40 v. can be directed to the target plates by electric fields and, if desired, by magnetic fields.
  • the magnetic field of the main discharge which is fairly weak beyond the anode, affects the path of the ions and of the sputtering products only to a slight extent.
  • the disposition of the targets and of the substrate may therefore be rather arbitrary.
  • a screening plate at a floating potential is arranged in front of the cathode, viewed in the direction towards the sputtering space. Also on the other side of the cathode a screening plate is provided, which is preferably connected with a beaker surrounding the anode. The two screening plates are preferably connected with each other.
  • the low anode voltage ensures that no uncontrolled sputtering of the apparatus occurs, whereas a plasma for the desired sputtering is available with high intensity.
  • the filament cathode 1 is arranged at one end of the cylindrical anode 2 formed by a copper tube traversed by a coolant; 3 designates a screening plate, connected by two supporting rods 5 with the second screening plate 4.
  • the plate 4 holds the copper screening beaker 6. All electrodes are held by through-connections 7 formed by rods or copper tubes, which are fastened in glass tubes 8 to the supporting plate 9.
  • the supporting plate 9 is secured in flange 10, which is bolted to the flange 11 of the housing part 12.
  • a magnetic coil 13 surrounds the centre of the anode.
  • the target 14 is arranged and opposite the latter the substrate (not shown).
  • An electric screen is designated by 15 and an auxiliary magnet by 16.
  • the discharge current is 12 A. with an anode voltage of 30 v.
  • the anode 2 has a diameter of 6 ems. and a length of 10 cms.
  • the cathode 1 has a heating energy of 250 w.
  • target currents of 20 ma./cm.'- can be attained so that high rates of sputtering can be obtained.
  • An ion source for slow-ion sputtering of an object at a given object position comprising an anode formed as a cylindrical sheath, a cathode located at one end of the anode, a screening plate located between the cathode and the object position to be sputtered, said screening plate blocking a direct path between said cathode and said object position, said object position being located beyond the other end of the anode, and means for producing a magnetic field, said magnetic field extending axially with respect to the anode and being a few hundred gauss in the References Cited discharge path between the cathode and the anode.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
US00080972A 1969-10-21 1970-10-15 Ion source for slow-ion sputtering Expired - Lifetime US3719582A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1953659A DE1953659C3 (de) 1969-10-21 1969-10-21 Ionenquelle für die Zerstäubung mit langsamen Ionen

Publications (1)

Publication Number Publication Date
US3719582A true US3719582A (en) 1973-03-06

Family

ID=5749151

Family Applications (1)

Application Number Title Priority Date Filing Date
US00080972A Expired - Lifetime US3719582A (en) 1969-10-21 1970-10-15 Ion source for slow-ion sputtering

Country Status (8)

Country Link
US (1) US3719582A (enrdf_load_stackoverflow)
JP (1) JPS513119B1 (enrdf_load_stackoverflow)
AU (1) AU2023570A (enrdf_load_stackoverflow)
CH (1) CH515341A (enrdf_load_stackoverflow)
DE (1) DE1953659C3 (enrdf_load_stackoverflow)
FR (1) FR2066179A5 (enrdf_load_stackoverflow)
GB (1) GB1270496A (enrdf_load_stackoverflow)
NL (1) NL7015117A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3793179A (en) * 1971-07-19 1974-02-19 L Sablev Apparatus for metal evaporation coating
US4512867A (en) * 1981-11-24 1985-04-23 Andreev Anatoly A Method and apparatus for controlling plasma generation in vapor deposition
US5458754A (en) 1991-04-22 1995-10-17 Multi-Arc Scientific Coatings Plasma enhancement apparatus and method for physical vapor deposition
WO1999058737A1 (en) * 1998-05-14 1999-11-18 Kaufman & Robinson, Inc. Apparatus for sputter deposition

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2621824C2 (de) * 1976-05-17 1982-04-29 Hitachi, Ltd., Tokyo Mikrowellen-Entladungs-Ionenquelle
JPS5623290U (enrdf_load_stackoverflow) * 1979-07-25 1981-03-02
JPS60190493U (ja) * 1984-05-30 1985-12-17 ダイセル化学工業株式会社 仮付治具
DE3707545A1 (de) * 1987-02-03 1988-08-11 Balzers Hochvakuum Anordnung zur stabilisierung eines lichtbogens zwischen einer anode und einer kathode
US5215640A (en) * 1987-02-03 1993-06-01 Balzers Ag Method and arrangement for stabilizing an arc between an anode and a cathode particularly for vacuum coating devices
EA015719B1 (ru) * 2008-02-13 2011-10-31 Александр Криманов Метод и устройство управления потоком ионов
CN112635287A (zh) * 2020-12-23 2021-04-09 长沙元戎科技有限责任公司 一种新型离子源等离子体中和器

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3793179A (en) * 1971-07-19 1974-02-19 L Sablev Apparatus for metal evaporation coating
US4512867A (en) * 1981-11-24 1985-04-23 Andreev Anatoly A Method and apparatus for controlling plasma generation in vapor deposition
US5458754A (en) 1991-04-22 1995-10-17 Multi-Arc Scientific Coatings Plasma enhancement apparatus and method for physical vapor deposition
US6139964A (en) 1991-04-22 2000-10-31 Multi-Arc Inc. Plasma enhancement apparatus and method for physical vapor deposition
WO1999058737A1 (en) * 1998-05-14 1999-11-18 Kaufman & Robinson, Inc. Apparatus for sputter deposition

Also Published As

Publication number Publication date
GB1270496A (en) 1972-04-12
DE1953659B2 (de) 1978-05-18
CH515341A (de) 1971-11-15
DE1953659A1 (de) 1971-04-29
NL7015117A (enrdf_load_stackoverflow) 1971-04-23
AU2023570A (en) 1972-03-30
FR2066179A5 (enrdf_load_stackoverflow) 1971-08-06
DE1953659C3 (de) 1979-01-25
JPS513119B1 (enrdf_load_stackoverflow) 1976-01-31

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