US3410774A - Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece - Google Patents
Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece Download PDFInfo
- Publication number
- US3410774A US3410774A US502986A US50298665A US3410774A US 3410774 A US3410774 A US 3410774A US 502986 A US502986 A US 502986A US 50298665 A US50298665 A US 50298665A US 3410774 A US3410774 A US 3410774A
- Authority
- US
- United States
- Prior art keywords
- mask
- areas
- reverse sputtering
- cathode
- conductive wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
Definitions
- the workpiece is biased to function as the cathode [and a cathodically biased mask, having apertures conforming to the shape of each selected area but larger in size, is axially aligned and positioned from the workpiece a distance which will not permit a DC ionic charge to occur.
- This invention relates to a process and apparatus for removing surface contaminants from materials; and more particularly to a process and apparatus for removin oxide and stains from selected surface areas of semiconductor substrates by ion bombardment, also commonly referred to as cathodic sputtering.
- cathodic sputtering refers to the dislocation of atoms or molecules from the surface of a material by the impact energy of gas ions which are accelerated in an electric field.
- Cathodic sputtering is established by the creation of a glow discharge between an anode and a cathode, wherein the current therebetween is composed of electron flow to the anode and positive ion flow to the cathode.
- the ions are created by ionization of gas molecules existing within the glow discharge region between the anode and cathode. The ionization results from collisions of the gas particles with the electron flow from the cathode to the anode.
- reverse sputtering The removal of surface contaminants by cathodic sputtering is known in the art and may be referred to as reverse sputtering since it is opposite to the process of cathodic sputtering wherein substances are deposited onto the surface of a material.
- reverse sputtering has been observed in electric-arc-inert-gas welding applications wherein contaminants are removed from the surfaces of the materials to be welded prior to the actual weldment.
- Reverse sputtering has been used to clean large surface areas of a semiconductor as a preliminary step in the manufacture of semiconductor devices such as photoelectric cells.
- mask or holder assemblies having suitably placed openings, hold the material in position in the ion stream and prevent ion bombardment of surface areas from which contaminants are not to be removed.
- the use of prior art masking techniques is unsatisfactory where contaminants are to be removed from extremely small selected surfaces areas (in order of 6-10 mil diameter).
- a uniform cleaning of the selected surface area is not obtained as the ion beam tends to concentrate in the center of the selected area with little, if any, sputtering of the peripheral areas. This also produces etching of the surface material which leaves undesirable pin-holes in the surface.
- An additional object is to prevent the accumulation of charge on the mask and resulting arcing from the mask to the surface material.
- a further, additional object is to remove contaminants from small selected surface areas of a material wherein the removal of material from adjacent areas can be uniformly controlled or eliminated.
- the above objects are achieved in a reverse sputtering process by interposing a perforated, electrically conductive mask in the ion stream adjacent to the cathode to expose only selected surface areas of the cathode from which surface contaminants are to be removed.
- the potential of the mask is maintained at the cathode potential by electrically interconnecting the mask and cathode.
- the thickness of the mask is selected to be a given ratio of the largest dimension (diameter, length of longest segment) of the surface area.
- the mask is selected from a material having high resistance to sputtering.
- the mask is made an integral part of the cathode by forming a layer on the surface of the cathode using known deposition or evaporation techniques and then etching the layer prior
- FIG. 1 is a diagrammatic representation of a simple form of apparatus for practicing the invention illustrating the environment in which the process is carried out.
- FIGS. 2a, b are enlarged detail views showing preferred embodiments of the mask and its interrelationship with a contaminated surface.
- Reverse sputtering requires a controlled inert atmosphere to provide the necessary gas ions for the sputtering action and to prevent the recontamination of the materials surface.
- tightly sealed vacuum chamber 2 isolates inert-gas atmosphere 19 such that the necessary environmental condition can be created to establish reverse sputtering.
- Base 4 of vacuum chamber 2 has vacuum port 12 through which controlled amounts of the atmosphere 19 can be removed to reduce the pressure within vacuum chamber 2.
- Inert-gas is introduced into vacuum chamber 2 through inert-gas port 18 in base 4.
- the pressure within vacuum chamber 2 is reduced by vacuum pump 8 through conduit 11 which is connected to vacuum port 12 in base 4.
- the vacuum pressure is measured and controlled by vacuum pressure valve and meter 10.
- Inert-gas enters vacuum chamber 2 through inert-gas port 18 via gas conduit 17 which connects with inert-gas reservoir 14.
- the amount of inert-gas admitted to vacuum chamber 2 is controlled by inert-gas valve and meter 16, which may be any type of well known micrometer needle valve, such as a Whitney micrometer needle valve. Regardless of the type of valve used, it must be capable of measuring pressure in microns of mercury.
- High voltage DC power supply 6 provides the necessary electrical power to initiate and sustain an arc discharge between cathode-mask assembly 33 and anode 44.
- Cathode lead connects the negative terminal of power supply 6 to the cathode or surface contaminated substance 22.
- Cathode lead 5 enters vacuum chamber 2 through high voltage feed-through 27a and then is passed within hollow holder assembly 24 and attached to surface contaminated substance 22.
- lead 9 is connected from the negative terminal of power supply 6 to a conductive wafer mask 30 through high voltage feed-through 27b and hollow mask holder assembly 36.
- Anode lead 7 connects the positive terminal of power supply 6 to anode 44 through high voltage feedthrough 27c and hollow anode holder assembly 42.
- the power supply 6 have the capability of providing between 1300 and 1500 volts at a current of 3 to milliamps per square inch of cathode for a sustained period of to minutes.
- Cathode-mask assembly 33 comprises surface contaminated substance 22, insulating substrate 26 having holes 28 and conductive wafer mask 30 with apertures 32.
- Mask holder assembly 36 retains the above alignment of conductor wafer mask 30 as well as holding conductor wafer mask 30 in spaced relationship with insulating substrate 26 and surface contaminated substance 22.
- the preferred spacing between anode 44 and cathodemask assembly 33 is approximately /2 inch for the conditions of inert-gas pressure and voltage specified herein.
- the anode-tocathode spacing can be decreased such that the anode is positioned just outside the well-known dark space which exists in the region between the anode and cathode in any cathodic sputtering process.
- the anode can be extended as far away from the surface contaminated substance 22 to a distance wherein the arc is not extinguished.
- vacuum pump 8 decreases the pressure within vacuum chamber 2 through port 12 and conduit 11 to approximately 5x 10- millimeters of mercury which is measured by vacuum pressure valve and meter 10.
- a controlled amount of inert-gas, such as argon, is admitted to vacuum chamber 2 through port 18 and conduit 17 from inert-gas reservoir 14. Approximately 5075 microns of argon is admitted to vacuum chamber 2 to provide a sufiicient atmosphere 19 for the reverse sputtering process.
- the inert-gas flow into vacuum chamber 2 is controlled by inert-gas valve and meter 16.
- any inert-gas can be used to form atmosphere 19, but argon is preferred as it is a heavy gas and the relatively large mass of its ions compared to other inert-gases provides greater reverse sputtering.
- the conductive wafer mask 30 which is maintained at the same potential as the surface contaminated substance 22, the aforementioned charge accumulation of argon ions 50 on insulating substrate 26 is prevented. This happens because the apertures 32 are aligned with the holes 28 such that select surface areas 38 are exposed to the argon atoms 50.
- the potential on conductive wafer 30 causes the argon ions 50 to fan out such that select surface areas 38 of surface contaminated substance 22 are uniformly bombarded without the resulting aforementioned pinhole effect.
- the ion charge accumulation on insulating substrate 26 is prevented, the possibility of dielectric breakdown of insulating substrate 26 is eliminated.
- silicon semiconductor substrate 39 comprises silicon wafer 20,- a substrate of silicon oxide 21 formed on top of silicon wafer 20, and a molybdenum land 23, which partially extends over silicon oxide substrate 21 and is enclosed by high temperature glass layer 26.
- the process for manufacturing the silicon semiconductor substrate 39 requires that the molybdenum substrate 23 be oxidized'prior to applying the glass layer 26 to remove residues formed during prior process steps in its manufacture.
- a hole 28 has been formed in glass layer 26 with a known chemical etching process using a chemical etchant such'as a mixture of nitric and hydrofluoric acids (HNO -HF) or a fluorboric acid and hydrofluoric acid solution (HBF -HF).
- a chemical etchant such'as a mixture of nitric and hydrofluoric acids (HNO -HF) or a fluorboric acid and hydrofluoric acid solution (HBF -HF).
- HNO -HF nitric and hydrofluoric acids
- HHF -HF fluorboric acid and hydrofluoric acid solution
- FIG. 2a is only a diagrammatical representation of semiconductor substrate 39 and the conductive wafer mask 30.
- Semiconductor substrate 39 may have a plurality of holes 28 exposing a plurality of selected surface areas 38.
- conductive wafer mask 30 would have a corresponding number of apertures 32 which would be aligned with holes 28 to expose selected surface areas 38 to the ion stream 50.
- the diameter 29 of hole 28 is 6 mils.
- the diameter 31 of aperture 32 is approximately 1 to 2 mils larger than diameter 29 of hole 28, as it is desirable to remove some surrounding glass from glass layer 26 in the process of removing the molybdenum oxide layer 40 from the selected surface area 38.
- the spacing 34 of the conductive wafer mask 30 with respect to the top surface of insulating glass layer 26 is a maximum of 1 to 2 mils. However, as will be described hereinafter, conductive wafer mask may be in actual contact with the top surface 25 of insulating glass layer 26.
- Conductive wafer mask 30 should be fabricated from a substance which is highly resistive to reverse sputtering.
- Aluminum, molybdenum and chromium appear to possess the desired characteristics of electrical conductivity and high resistance to the bombardment of argon ions or other inert-gas ions.
- These metals can be made more resistive to reverse sputtering by forming a layer of oxide on their upper-most surface, as the oxides of these metals are more resistive to ion bombardment than the metals themselves. It is preferred that the thickness 35 of the conductive wafer mask 30 be no greater than /2 the diameter of aperture 31.
- Uniform removal of the molybdenum oxide layer from selected surface area 38 is achieved by preventing the formation of an ion charge on the top surface 25 of insulating glass layer 26 by maintaining the potential of conductor wafer mask 30 at the same potential as the silicon substrate 20.
- conductive lead 9 provides the electrical connection between the conductive wafer mask 30 and the silicon substrate 20.
- FIG. 2b shows another aspect of the inventive apparatus wherein conductive wafer mask 30 is shown as a deposited film on the top surface 25 of insulating glass layer 26.
- the conductive Wafer mask 30 can be formed by known deposition techniques on top surface 25 of insulating glass layer 26; and hole 29 and aperture 31 etched in insulating glass layer 26 and conductive wafer mask 30 by known chemical etching techniques as mentioned supra.
- the conductive wafer mask material must also possess essentially the same thermal expansion characteristics as the silicon wafer. Molybdenum appears to have the three aforementioned characteristics and forms a satisfactory conductive wafer mask when deposited in thicknessess equal to approximately 5000 Angstroms.
- the potental of the deposited conductive wafer mask 30 is maintained at the same potential as the silicon layer 20 by interconnecting the two via lead 9.
- the conductive wafer mask 30 is subject to attack from the ion stream, however, as its thickness exceeds that of the molybdenum oxide layer 40, it will not be sputtered away prior to the removal of the molybdenum oxide layer 40. Consequently, the attrition of the deposited conductive wafer mask 30 is not a problem. However, in the application disclosed in FIG. 2a wherein a separate conductive wafer mask 30 is used, the continuous attrition of the conductive wafer mask 30 requires that it be replaced periodically. Those skilled in the art will recognize that the cleaning process is not limited to the removal of molybdenum oxide. For example, the oxides of other metals, such as aluminum, can also be removed.
- a reverse sputtering apparatus for removing surface contaminants from a plurality of selected surface areas of a surface contaminated material by exposure of said selected surface areas to a bombarding ion beam of said apparatus, wherein said apparatus comprises an anode, a cathode-mask assembly, a power supply, and a controlled atmosphere system; the cathode-mask assembly comprising:
- an insulating substrate upon the surface of said surface contaminated material said insulating substrate having a plurality of openings therein exposing said selected surface areas for contaminant removal therefrom, said openings being of the same size as said selected areas;
- an electrically conductive wafer mask having a plurality of apertures, there being one aperture for each selected surface area, the apentures being greater in size than said selected areas to allow fan-out of the bombarding ions so as to impinge on at least the entire area of each of said selected areas, said wafer mask positioned at a distance from said insulating layer within which the formation of a DC ionic charge on said insulating layer and said wafer mask will not occur when said wafer mask is energized, the apertures and said selected surface areas being aligned to expose said selected surface areas to the ion beam, said electrically conductive Wafer mask bein maintained at the same DC electrical potential as said surface contaminated material, whereby a uniform sputtering of said selected surface areas is obtained.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US502986A US3410774A (en) | 1965-10-23 | 1965-10-23 | Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece |
GB41823/66A GB1157989A (en) | 1965-10-23 | 1966-09-20 | Improvements in and relating to Cleaning Selected Surface Areas of Substrates |
NL666613583A NL154560B (nl) | 1965-10-23 | 1966-09-27 | Werkwijze voor het reinigen van het oppervlak van een op een halfgeleider aangebrachte metaallaag door kathodeverstuiving, alsmede met deze werkwijze vervaardigde halfgeleiderinrichting. |
DE1621599A DE1621599C2 (de) | 1965-10-23 | 1966-10-19 | Einrichtung zum Abtragen von Verunrei nigungen einer auf einem Halbleiterkörper aufgebrachten metallischen Schicht im Be reich von kleinen Offnungen einer Isolier schicht durch Kathodenzerstäubung |
CH1534466A CH447760A (de) | 1965-10-23 | 1966-10-21 | Verfahren zum Reinigen verunreinigter Oberflächen von Halbleitermaterialien mittels inverser Kathodenzerstäubung |
BE688703D BE688703A (de) | 1965-10-23 | 1966-10-21 | |
FR8091A FR1501165A (fr) | 1965-10-23 | 1966-11-20 | Nettoyage par bombardement ionique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US502986A US3410774A (en) | 1965-10-23 | 1965-10-23 | Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece |
Publications (1)
Publication Number | Publication Date |
---|---|
US3410774A true US3410774A (en) | 1968-11-12 |
Family
ID=24000292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US502986A Expired - Lifetime US3410774A (en) | 1965-10-23 | 1965-10-23 | Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece |
Country Status (7)
Country | Link |
---|---|
US (1) | US3410774A (de) |
BE (1) | BE688703A (de) |
CH (1) | CH447760A (de) |
DE (1) | DE1621599C2 (de) |
FR (1) | FR1501165A (de) |
GB (1) | GB1157989A (de) |
NL (1) | NL154560B (de) |
Cited By (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3502562A (en) * | 1967-04-19 | 1970-03-24 | Corning Glass Works | Multiple cathode sputtering fixture |
US3507774A (en) * | 1967-06-02 | 1970-04-21 | Nat Res Corp | Low energy sputtering apparatus for operation below one micron pressure |
US3528906A (en) * | 1967-06-05 | 1970-09-15 | Texas Instruments Inc | Rf sputtering method and system |
US3676317A (en) * | 1970-10-23 | 1972-07-11 | Stromberg Datagraphix Inc | Sputter etching process |
US3708418A (en) * | 1970-03-05 | 1973-01-02 | Rca Corp | Apparatus for etching of thin layers of material by ion bombardment |
FR2162249A2 (de) * | 1971-03-05 | 1973-07-20 | Alsthom | |
US3839177A (en) * | 1971-04-08 | 1974-10-01 | Philips Corp | Method of manufacturing etched patterns in thin layers having defined edge profiles |
US3897324A (en) * | 1973-06-25 | 1975-07-29 | Honeywell Inc | Material deposition masking for microcircuit structures |
US4012307A (en) * | 1975-12-05 | 1977-03-15 | General Dynamics Corporation | Method for conditioning drilled holes in multilayer wiring boards |
US4157465A (en) * | 1972-01-10 | 1979-06-05 | Smiths Industries Limited | Gas-lubricated bearings |
EP0012327A1 (de) * | 1978-12-18 | 1980-06-25 | International Business Machines Corporation | Lithographisches Ionenätzverfahren |
WO1980002353A1 (en) * | 1979-04-23 | 1980-10-30 | Western Electric Co | Treating multilayer printed wiring boards |
EP0054641A1 (de) * | 1980-12-22 | 1982-06-30 | International Business Machines Corporation | Thermisch kompensierte Schattenmaske |
US4340461A (en) * | 1980-09-10 | 1982-07-20 | International Business Machines Corp. | Modified RIE chamber for uniform silicon etching |
US4426274A (en) | 1981-06-02 | 1984-01-17 | International Business Machines Corporation | Reactive ion etching apparatus with interlaced perforated anode |
US4654118A (en) * | 1986-03-17 | 1987-03-31 | The United States Of America As Represented By The Secretary Of The Army | Selectively etching microstructures in a glow discharge plasma |
US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
US5340015A (en) * | 1993-03-22 | 1994-08-23 | Westinghouse Electric Corp. | Method for applying brazing filler metals |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5527438A (en) * | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
US5816473A (en) * | 1990-02-19 | 1998-10-06 | Hitachi, Ltd. | Method of fabricating electronic circuit device and apparatus for performing the same method |
US5976328A (en) * | 1996-01-26 | 1999-11-02 | Hitachi, Ltd. | Pattern forming method using charged particle beam process and charged particle beam processing system |
US6193855B1 (en) | 1999-10-19 | 2001-02-27 | Applied Materials, Inc. | Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage |
US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
US6350353B2 (en) | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
US6521897B1 (en) * | 2000-11-17 | 2003-02-18 | The Regents Of The University Of California | Ion beam collimating grid to reduce added defects |
US20030077910A1 (en) * | 2001-10-22 | 2003-04-24 | Russell Westerman | Etching of thin damage sensitive layers using high frequency pulsed plasma |
US6554979B2 (en) | 2000-06-05 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus for bias deposition in a modulating electric field |
US6559061B2 (en) | 1998-07-31 | 2003-05-06 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
US6746591B2 (en) | 2001-10-16 | 2004-06-08 | Applied Materials Inc. | ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature |
US20070122548A1 (en) * | 2005-11-09 | 2007-05-31 | Hiroshi Inaba | Lapping tool and method for manufacturing the same |
US20160035539A1 (en) * | 2014-07-30 | 2016-02-04 | Lauri SAINIEMI | Microfabrication |
US9779643B2 (en) | 2012-02-15 | 2017-10-03 | Microsoft Technology Licensing, Llc | Imaging structure emitter configurations |
US9787576B2 (en) | 2014-07-31 | 2017-10-10 | Microsoft Technology Licensing, Llc | Propagating routing awareness for autonomous networks |
US9807381B2 (en) | 2012-03-14 | 2017-10-31 | Microsoft Technology Licensing, Llc | Imaging structure emitter calibration |
US9827209B2 (en) | 2015-02-09 | 2017-11-28 | Microsoft Technology Licensing, Llc | Display system |
US9860321B2 (en) | 2014-08-07 | 2018-01-02 | Microsoft Technology Licensing, Llc | Propagating communication awareness over a cellular network |
US10018844B2 (en) | 2015-02-09 | 2018-07-10 | Microsoft Technology Licensing, Llc | Wearable image display system |
US10191515B2 (en) | 2012-03-28 | 2019-01-29 | Microsoft Technology Licensing, Llc | Mobile device light guide display |
US10192358B2 (en) | 2012-12-20 | 2019-01-29 | Microsoft Technology Licensing, Llc | Auto-stereoscopic augmented reality display |
US10254942B2 (en) | 2014-07-31 | 2019-04-09 | Microsoft Technology Licensing, Llc | Adaptive sizing and positioning of application windows |
US10317677B2 (en) | 2015-02-09 | 2019-06-11 | Microsoft Technology Licensing, Llc | Display system |
US10324733B2 (en) | 2014-07-30 | 2019-06-18 | Microsoft Technology Licensing, Llc | Shutdown notifications |
US10388073B2 (en) | 2012-03-28 | 2019-08-20 | Microsoft Technology Licensing, Llc | Augmented reality light guide display |
US10478717B2 (en) | 2012-04-05 | 2019-11-19 | Microsoft Technology Licensing, Llc | Augmented reality and physical games |
US10502876B2 (en) | 2012-05-22 | 2019-12-10 | Microsoft Technology Licensing, Llc | Waveguide optics focus elements |
US10592080B2 (en) | 2014-07-31 | 2020-03-17 | Microsoft Technology Licensing, Llc | Assisted presentation of application windows |
US10678412B2 (en) | 2014-07-31 | 2020-06-09 | Microsoft Technology Licensing, Llc | Dynamic joint dividers for application windows |
US11068049B2 (en) | 2012-03-23 | 2021-07-20 | Microsoft Technology Licensing, Llc | Light guide display and field of view |
US11086216B2 (en) | 2015-02-09 | 2021-08-10 | Microsoft Technology Licensing, Llc | Generating electronic components |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2032763C (en) * | 1990-12-20 | 2001-08-21 | Mitel Corporation | Prevention of via poisoning by glow discharge induced desorption |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2702274A (en) * | 1951-04-02 | 1955-02-15 | Rca Corp | Method of making an electrode screen by cathode sputtering |
US3341442A (en) * | 1963-09-16 | 1967-09-12 | Ibm | Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays |
US3361659A (en) * | 1967-08-14 | 1968-01-02 | Ibm | Process of depositing thin films by cathode sputtering using a controlled grid |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3087838A (en) * | 1955-10-05 | 1963-04-30 | Hupp Corp | Methods of photoelectric cell manufacture |
DE1083617B (de) * | 1956-07-27 | 1960-06-15 | Gen Motors Corp | Verfahren zum Herstellen poroeser Oberflaechen auf chromierten Zylinderbuechsen von Verbrennungsmotoren |
-
1965
- 1965-10-23 US US502986A patent/US3410774A/en not_active Expired - Lifetime
-
1966
- 1966-09-20 GB GB41823/66A patent/GB1157989A/en not_active Expired
- 1966-09-27 NL NL666613583A patent/NL154560B/xx unknown
- 1966-10-19 DE DE1621599A patent/DE1621599C2/de not_active Expired
- 1966-10-21 BE BE688703D patent/BE688703A/xx unknown
- 1966-10-21 CH CH1534466A patent/CH447760A/de unknown
- 1966-11-20 FR FR8091A patent/FR1501165A/fr not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2702274A (en) * | 1951-04-02 | 1955-02-15 | Rca Corp | Method of making an electrode screen by cathode sputtering |
US3341442A (en) * | 1963-09-16 | 1967-09-12 | Ibm | Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays |
US3361659A (en) * | 1967-08-14 | 1968-01-02 | Ibm | Process of depositing thin films by cathode sputtering using a controlled grid |
Cited By (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3502562A (en) * | 1967-04-19 | 1970-03-24 | Corning Glass Works | Multiple cathode sputtering fixture |
US3507774A (en) * | 1967-06-02 | 1970-04-21 | Nat Res Corp | Low energy sputtering apparatus for operation below one micron pressure |
US3528906A (en) * | 1967-06-05 | 1970-09-15 | Texas Instruments Inc | Rf sputtering method and system |
US3708418A (en) * | 1970-03-05 | 1973-01-02 | Rca Corp | Apparatus for etching of thin layers of material by ion bombardment |
US3676317A (en) * | 1970-10-23 | 1972-07-11 | Stromberg Datagraphix Inc | Sputter etching process |
FR2162249A2 (de) * | 1971-03-05 | 1973-07-20 | Alsthom | |
US3847776A (en) * | 1971-03-05 | 1974-11-12 | Alsthom Cgee | Method of preparing a pattern of a layer of refractory metal by masking |
US3839177A (en) * | 1971-04-08 | 1974-10-01 | Philips Corp | Method of manufacturing etched patterns in thin layers having defined edge profiles |
US4157465A (en) * | 1972-01-10 | 1979-06-05 | Smiths Industries Limited | Gas-lubricated bearings |
US3897324A (en) * | 1973-06-25 | 1975-07-29 | Honeywell Inc | Material deposition masking for microcircuit structures |
US4012307A (en) * | 1975-12-05 | 1977-03-15 | General Dynamics Corporation | Method for conditioning drilled holes in multilayer wiring boards |
EP0012327A1 (de) * | 1978-12-18 | 1980-06-25 | International Business Machines Corporation | Lithographisches Ionenätzverfahren |
WO1980002353A1 (en) * | 1979-04-23 | 1980-10-30 | Western Electric Co | Treating multilayer printed wiring boards |
US4340461A (en) * | 1980-09-10 | 1982-07-20 | International Business Machines Corp. | Modified RIE chamber for uniform silicon etching |
EP0054641A1 (de) * | 1980-12-22 | 1982-06-30 | International Business Machines Corporation | Thermisch kompensierte Schattenmaske |
US4391034A (en) * | 1980-12-22 | 1983-07-05 | Ibm Corporation | Thermally compensated shadow mask |
US4426274A (en) | 1981-06-02 | 1984-01-17 | International Business Machines Corporation | Reactive ion etching apparatus with interlaced perforated anode |
US4654118A (en) * | 1986-03-17 | 1987-03-31 | The United States Of America As Represented By The Secretary Of The Army | Selectively etching microstructures in a glow discharge plasma |
US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
US5816473A (en) * | 1990-02-19 | 1998-10-06 | Hitachi, Ltd. | Method of fabricating electronic circuit device and apparatus for performing the same method |
US5340015A (en) * | 1993-03-22 | 1994-08-23 | Westinghouse Electric Corp. | Method for applying brazing filler metals |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5527438A (en) * | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
US6344115B1 (en) | 1996-01-26 | 2002-02-05 | Hitachi, Ltd. | Pattern forming method using charged particle beam process and charged particle beam processing system |
US5976328A (en) * | 1996-01-26 | 1999-11-02 | Hitachi, Ltd. | Pattern forming method using charged particle beam process and charged particle beam processing system |
US20040152301A1 (en) * | 1998-07-31 | 2004-08-05 | Imran Hashim | Method and apparatus for forming improved metal interconnects |
US6992012B2 (en) | 1998-07-31 | 2006-01-31 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
US6559061B2 (en) | 1998-07-31 | 2003-05-06 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
US6709987B2 (en) | 1998-07-31 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
US6193855B1 (en) | 1999-10-19 | 2001-02-27 | Applied Materials, Inc. | Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage |
US6350353B2 (en) | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
US6673724B2 (en) | 1999-12-03 | 2004-01-06 | Applied Materials, Inc. | Pulsed-mode RF bias for side-wall coverage improvement |
US6554979B2 (en) | 2000-06-05 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus for bias deposition in a modulating electric field |
US6521897B1 (en) * | 2000-11-17 | 2003-02-18 | The Regents Of The University Of California | Ion beam collimating grid to reduce added defects |
US6746591B2 (en) | 2001-10-16 | 2004-06-08 | Applied Materials Inc. | ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature |
US20030077910A1 (en) * | 2001-10-22 | 2003-04-24 | Russell Westerman | Etching of thin damage sensitive layers using high frequency pulsed plasma |
US20070122548A1 (en) * | 2005-11-09 | 2007-05-31 | Hiroshi Inaba | Lapping tool and method for manufacturing the same |
US8092560B2 (en) * | 2005-11-09 | 2012-01-10 | Hitachi, Ltd. | Lapping tool and method for manufacturing the same |
US9779643B2 (en) | 2012-02-15 | 2017-10-03 | Microsoft Technology Licensing, Llc | Imaging structure emitter configurations |
US9807381B2 (en) | 2012-03-14 | 2017-10-31 | Microsoft Technology Licensing, Llc | Imaging structure emitter calibration |
US11068049B2 (en) | 2012-03-23 | 2021-07-20 | Microsoft Technology Licensing, Llc | Light guide display and field of view |
US10388073B2 (en) | 2012-03-28 | 2019-08-20 | Microsoft Technology Licensing, Llc | Augmented reality light guide display |
US10191515B2 (en) | 2012-03-28 | 2019-01-29 | Microsoft Technology Licensing, Llc | Mobile device light guide display |
US10478717B2 (en) | 2012-04-05 | 2019-11-19 | Microsoft Technology Licensing, Llc | Augmented reality and physical games |
US10502876B2 (en) | 2012-05-22 | 2019-12-10 | Microsoft Technology Licensing, Llc | Waveguide optics focus elements |
US10192358B2 (en) | 2012-12-20 | 2019-01-29 | Microsoft Technology Licensing, Llc | Auto-stereoscopic augmented reality display |
US10324733B2 (en) | 2014-07-30 | 2019-06-18 | Microsoft Technology Licensing, Llc | Shutdown notifications |
US20160035539A1 (en) * | 2014-07-30 | 2016-02-04 | Lauri SAINIEMI | Microfabrication |
US10254942B2 (en) | 2014-07-31 | 2019-04-09 | Microsoft Technology Licensing, Llc | Adaptive sizing and positioning of application windows |
US9787576B2 (en) | 2014-07-31 | 2017-10-10 | Microsoft Technology Licensing, Llc | Propagating routing awareness for autonomous networks |
US10592080B2 (en) | 2014-07-31 | 2020-03-17 | Microsoft Technology Licensing, Llc | Assisted presentation of application windows |
US10678412B2 (en) | 2014-07-31 | 2020-06-09 | Microsoft Technology Licensing, Llc | Dynamic joint dividers for application windows |
US9860321B2 (en) | 2014-08-07 | 2018-01-02 | Microsoft Technology Licensing, Llc | Propagating communication awareness over a cellular network |
US10317677B2 (en) | 2015-02-09 | 2019-06-11 | Microsoft Technology Licensing, Llc | Display system |
US10018844B2 (en) | 2015-02-09 | 2018-07-10 | Microsoft Technology Licensing, Llc | Wearable image display system |
US9827209B2 (en) | 2015-02-09 | 2017-11-28 | Microsoft Technology Licensing, Llc | Display system |
US11086216B2 (en) | 2015-02-09 | 2021-08-10 | Microsoft Technology Licensing, Llc | Generating electronic components |
Also Published As
Publication number | Publication date |
---|---|
NL154560B (nl) | 1977-09-15 |
DE1621599B1 (de) | 1973-05-24 |
NL6613583A (de) | 1967-04-24 |
DE1621599C2 (de) | 1973-12-06 |
FR1501165A (fr) | 1967-11-10 |
CH447760A (de) | 1967-11-30 |
BE688703A (de) | 1967-03-31 |
GB1157989A (en) | 1969-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3410774A (en) | Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece | |
US3271286A (en) | Selective removal of material using cathodic sputtering | |
KR101335120B1 (ko) | 플라즈마 프로세싱 시스템에서 대기 플라즈마의 최적화를위한 장치 | |
US3617463A (en) | Apparatus and method for sputter etching | |
US3479269A (en) | Method for sputter etching using a high frequency negative pulse train | |
US3661747A (en) | Method for etching thin film materials by direct cathodic back sputtering | |
US3598710A (en) | Etching method | |
US3708418A (en) | Apparatus for etching of thin layers of material by ion bombardment | |
US4070264A (en) | R. F. sputtering method and apparatus | |
US3526584A (en) | Method of providing a field free region above a substrate during sputter-depositing thereon | |
EP0998597B1 (de) | Feldemitterherstellung durch elektrochemischen lift off mit offenem schaltkreis | |
US4209552A (en) | Thin film deposition by electric and magnetic crossed-field diode sputtering | |
JPS5814507B2 (ja) | シリコンを選択的にイオン食刻する方法 | |
US3507248A (en) | Vacuum evaporation coating apparatus including means for precleaning substrates by ion bombardment | |
US4264813A (en) | High intensity ion source using ionic conductors | |
JP3211391B2 (ja) | ドライエッチング方法 | |
RU2384911C1 (ru) | Способ обработки электродов изолирующих промежутков высоковольтных электровакуумных приборов | |
WO1999003123A1 (en) | Gate electrode formation method | |
JP3278732B2 (ja) | エッチング装置及びエッチング方法 | |
KR100655217B1 (ko) | 고주파 플라즈마 챔버의 세정 방법 | |
JPS6350854B2 (de) | ||
JPS6228574B2 (de) | ||
KR100351906B1 (ko) | 반도체 소자의 제조 방법 | |
JP3208931B2 (ja) | プラズマ処理装置とこれを用いたプラズマ処理方法 | |
JPH04155825A (ja) | 固体表面の清浄化方法 |