US3312548A - Xerographic plates - Google Patents

Xerographic plates Download PDF

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Publication number
US3312548A
US3312548A US516529A US51652965A US3312548A US 3312548 A US3312548 A US 3312548A US 516529 A US516529 A US 516529A US 51652965 A US51652965 A US 51652965A US 3312548 A US3312548 A US 3312548A
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United States
Prior art keywords
selenium
plate
arsenic
halogen
layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US516529A
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English (en)
Inventor
Virgil E Straughan
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Xerox Corp
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Xerox Corp
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Filing date
Publication date
Priority to DENDAT1250737D priority Critical patent/DE1250737B/de
Priority to GB24426/64A priority patent/GB1067223A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Priority to US516529A priority patent/US3312548A/en
Priority to US571150A priority patent/US3467548A/en
Priority to DE1522711A priority patent/DE1522711C3/de
Priority to FR87870A priority patent/FR1505803A/fr
Priority to GB57410/66A priority patent/GB1165579A/en
Application granted granted Critical
Publication of US3312548A publication Critical patent/US3312548A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/142—Inert intermediate layers
    • G03G5/144—Inert intermediate layers comprising inorganic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based

Definitions

  • This invention relates t-o Xerography and more specifically, to a system utilzing an improved photosensitive plate.
  • a member or plate which comprises a substantially electrically conductive backing member such as for example, a paper or a metallic member, having a photoconductive insulating surface thereon.
  • a suitable plate for this purpose is a metallic member having a layer of vitreous seleniurn.
  • Such a plate is characterized by being cap-able of receiving a satisfactory electrostatc charge and selectively dissipating such charge when exposed to a light pattern and, in general, is largely sensitive to light in the blue and blue-green spectral range.
  • the electrostatic charge pattern formed by the selective dissipation of charge noted above is converted into a visible image through the selective attraction of marking particles by known methods of image development.
  • the Xerographic plate is accordingly of great importance in the xerographic process as it is the element responsible for the Creation of the charge pattern.
  • Other forms of xerographic plates are known including, for example, sheets of paper coated with a photoconductive mixture of zinc oxide particles in an insulating resn.
  • the vitreous selenium xero- 'graphic plate remains the most widely used because it is capable of holding an electrostatic charge for long periods of time when not exposed to light, because it is relatively sensitive to light compared with other xerographic plates, and because it has sufcient strength and stability to be reused hundreds or even thousands of times.
  • the selenium plate, ho wever is susceptible to deleterious crystal growth when the plate is heated during operation. This growth of crystals in the selenium layer destroys the photoconductive insulating properties of the selenium, and places a limit upon the effective life of the selenium plate.
  • a Xerographic plate containing selenium, arsenic, and up to 10,000 parts per million (p.p.m.) of at least one member of the halogen family.
  • suitable quantities of selenium, arsenic, and a ha logen are sealed in a container and reacted at an elevated temperature to form a homogeneous m-iXture of these elements.
  • the alloy is then cooled and 'applied to a suitable conductive supporting base by vacu-um evaporation. When the evaporation process is completed, a 'finished plate is removed from the vacuum chamber.
  • the effective range of arsenic in the selenium layer is about 0.5 to 50 percent by weight With the prefenred range being about 1 to 25 percent.
  • the lower limit of 'about 1 percent is dctated by the fact that arsenic in amounts as low as 0.5 percent raises the crystal-lization temperature and 1 percent practi-cally eliminates crystallization.
  • the upper limit of 25 percent is chosen because this amount of arsenic in combination with halogen doping will achieve essentially the same degree of light sensitivity and broadened spectral response as As Se o r 38.5 percent arsenic, without introducing the high dark discharge property of As Se
  • the effective range of the halogen addition is from about 10 to 10,000 parts per million with about to 5,000 parts per million being preferred.
  • the sensitivity for a given amount of arsenic increases to a certain degree with increased amounts of the halogen. Although amounts of 10 parts per million do exhibit an increased sensitivity a more desirable sensitivity value can be obtained with greater amounts, such as at least 100 parts of the halogen. Similarly amounts as high as 10,000 parts per million (1 percent) are effective, but are unnecessary in most cases, in that there is no significant change over the use of 5000 parts per million.
  • the seleni-um-arsenic-halogen composition may comprise the entire insul'ation layer or be present as -a thin outer layer overlaying a base layer of pure selenium.
  • FIG. 1 is' a schematic sectional View 'of one ⁇ form of erographic plate according to the invention
  • FIG. 2 is a schematic sectional View of a second form of xerographic plate according to the invention.
  • FIG. 3 is a bar graph showing the relative sensitivity of various xerographic plates
  • FIG. 4 shows the relative sensitivity of a selenium plate with increasing amounts of arsenic, with and without the addition of a halogen.
  • the halogen is primarily illustrated by the use of iodine in FIGURES 1 to 4.
  • FIGURE 1 shows a first form of improved Xerographic plate according to the invention.
  • Reference character 10 designates an electrically conducti-ve mechanical support member. This is conventionally a metal plate such as -brass, aluminum, gold, platinurn, steel or the like.
  • the support member may be of any convenient thickness, rigd or flexible, in the form of a sheet, a web, a cylinder, or the like, and may be coated with a thin layer of plastic.
  • Reference character 12 designates the photocon ductive insulating layer which is coated on member 11. As shown in the figure, this layer is comprised of yitreous selenium together with lesser amounts of arsenc and a halogen consisting of iodine, bromine, chlorine or fiuorine.
  • this layer may be as thin as about 1 micron or as thick as about 300 microns or more, 'but for most commercial applications the thickness will -generally lie between about 20 to 80 microns. This range of 20 to 80 is preferred in that the thi-cker layers (ie. those approaching 300 microns) show some signs less desirable adherence to the support member than lesser thicknesn
  • a suitable method of making the plate of FIGURE 1 is described below for illustrative purposes only.
  • Suitable quantities of selenium, arsenic, and iodine are sealed in a reaction vessel and reacted at 525 C. for
  • the selenium mixture is cooled and removed from the reaction vessel, it is applied to a suitable support member 10, such as a sheet of polishe d brass, by a vacuum evaporation process.
  • a suitable support member 10 such as a sheet of polishe d brass
  • the mixture is placed in a crucible within a bell jar and the brass plate is supported about 12 inches-
  • the sensitivities of a 100 percent selenium plate and a u selenium-arsenc pl-ate prepared under similar conditions are also included for reference.
  • the plates containing iodine 'exhibits a very substantial increase in sensitivity as compared with the plates lacking iodine. This increase sensitivity may not become apparent until several days after the plate is made.
  • the plate containing the bromine addition shows a sensitivity comparable to plates containing iodine.
  • a Xerographic plate can be constructed in accondance with this embodiment by including a second evaporation source, such as a molybdenum boat, in the vacuum 'bell jar.
  • the -prin cipal evaporation source is loaded with pure selenium or selenium with iron powder while the selenium-arensic-iodine mixture is placed in the molybdenum boat which comprises a second evapo-ration source.
  • the selenium is first evaporated onto a suitthe sensitivity of a 100 percent selenium plate.
  • the seleniumarsenic iodine mixture is eva'porated onto the selenium.
  • the coating process is simplified because the alloy is evaporated in a very short time and there is less concern about non-uniforrn distribution of the arsenc and iodine in the plate.
  • Layer 14 may be of any convenient thickness. Layers between about 0.1 and 0.5 micron have been found satisfactory. There is no upper limit on this thickness, since as layer 14 becomes very thick, the embodiment of FIG- URE 2 simply becomes the embodiment of FIGURE 1.
  • the layered embodiment is capable of producng substantially the same increase in speed as the plate incorporating' arsenc and selenium throughout the bulk of the selenium.
  • FIGURE 4 The increase in sensitivity for a given selenium plate with increasing amounts of arsenc, with and without a halogen, is shown in FIGURE 4.
  • curve A represents the light sensitivity of a selenium plate with increasing amounts of arsenc, with no halogen additive.
  • the light sensitivity of 1 at 0 percent arsenc would -be
  • the sensitivity of a selenium-arsenc plate does not show improved sensitivity over 'a percent selenium plate until the arsenc is added in amounts upward of about 13 percent.
  • curve B shows that the addition of 1000 parts per million of iodine increases the light sensitivity of the seleniumarsenic plate at any percentage of arsenc, reaching a maximum of about 6 times the sensitivity of a 100 percent selenium plate at about 18 percent arsenc.
  • Iodine is the preferred halogen additive, in that it can be Conveniently added as a solid in weighed amounts to arsenc and selenium in a Pyrex vial just prior to evacuation and sealing. As previously described, the vial is then heated in a rocking furnace to insure proper mixing and homogenization.
  • Bromine is added as liquid drops from a burette to the arsenc and selenium which is precooled in a glass tube by a Dry Ice-acetone mixture. This procedure is important in order to prevent a complete loss of the bromine during evacuation since the melting point of bromine is -7 C.
  • Chlorine may be added by slightly different procedure. In this procedure the chlorine gas is admitted to an evacuating tube containing gram quantities of arsenc and selenium. The remaining standard amounts of arsenic and selenium are added to the tube and cooled in Dry Ice-acetone mixtures prior to scaling under vacuum. Both the bromne and chlorine are now 'sufl'iciently blended with the arsenic and selenium and the mixing and homogenizati'on process is then carried out as set forth in the description using iodine as an additive. It has been found that bromine gives effects similar to iodine when used in the plates of this invention.
  • Example I Amixture of about 17.5 percent arsenic, about 82.5 percent selenium, plus about 1000 p.p.m. of iodine are sealed in a Pyrex vial and reacted at about 52S C. for about three hours in a rocking furnace. The mixture is then cooled to about room temperature, removed from the Pyrex vial, and placed in a quartz crucible within a bell jar. An alumin-um plate is supported about 12 inches above the crucible and maintained at a temperature of about 70 C. The bell jar is then evacuated to a pressure of about 5 10- torr and the quartz crucible is heated to a temperature of about 380 C. to evaporate the selenium mixture onto the brass plate. The crucible is kept at the evaporation temperature for approximately 30 minutes. At the end of this time the crucible is permitted to cool and the finished plate is removed from the bell jar.
  • Example II A mixture of about 17.5 percent arsenic and about 82.5 percent selenium are placed in a Pyrex vial. Bromine is added to this mixture in a concentraton of about 500 p.p.m. as liquid drops from a burette to the arsenic and selenium mixture which is precooled in the glass vial by a Dry Ice acetone mixture. The Pyrex vial containing the resulting mixture is then evacuated and sealed. The sealed Pyrex vial is then treated in the same manner as the iodine-doped mixture set forth in Example I.
  • Example III A mixture of about 15 percent arsenic and about 85 percent selenium is mixed with chlorine by first placing one gram each of arsenic and selenium in an evacuated tube. Chlorine gas is then admitted to the evacuated tube to produce a concentraton of chlorine of about 2,000 p.p.m. The chlorine reacts with the arsenic and selenium as evidenced by the evolution of heat. The remaining amounts of arsenic and selenium are then added to the tube and cooled in a Dry Ice-acetone mixture prior to scaling in the Pyrex vial under vacuum. The sealed Pyrex vial is then treated in the same manner as the iodine-doped mixture set forth in Example I.
  • the plates made in accordance with the present invention are normally used in a xerographic process including at least the three basi-c steps of charging, exposing, and developing.
  • a plate which has preferably been stored in darkness, is given a surface electrostatic charge by being passed under a corona disch arge device or the like. A positive potential or charge on the order of several hundred volts is typical.
  • the plate is then exposed to a pattern of light and shadow, as in a camera. This selectively dissipates the charge previously applied and the remaining charge forms a charge pattern conforming to the light pattern.
  • the electrostati-c pattern is made into a visible reproduction of the light pattern through selective electrostatically controlled deposition of marking material. Apparatus and materials for carrying out these basic xerographic steps are well-known in the art and need not be further described here.
  • the halogen may be convenient ly added as a compound of arsenic or selenium.
  • sodium hypochlorite could well be a source of chlorine. This allows all the halogens to be :added to the selenium-arsenic mixture as solids, notwithstanding the fact that some halogens occur in their elemental form as a gas or liquid at room temperature.
  • a xerographic plate having a photoconductive insulating layer, said layer comprising a composition of selenium, arsenic and a halogen, said halogen being present in a concentraton of about 10 to 10,000 parts per million.
  • a xerographic plate having an electrically conductive support member and a photoconductive insulatng layer thereon comprising a composition of selenium, arsenic, and a halogen, the thickness of said insulatng layer being about 1 to 300 microns, the arsenic constituting between about 05% to 50% of said layer, and the halogen present therein in an amount between about 10 parts per million to about 10,000 parts per million.
  • a xerographic plate having a photoconductive insulating layer, said layer comprising a composition having about 820% selenium, 180% arsenic and about 1000 parts per million of iodine.
  • the plate of claim 10 wherein the thickness of the insulatng layer is about 20 to microns.
  • a xerographic plate having an electrically conductive support member, a layer of substantially pure Vitreous selenium coated thereon, and a photoconductive layer coated over said selenium layer, said photoconductive layer comprising a mixture of vitreous selenium, about 0.5% to 50% arsenic, and between about 10 to 10,000 parts per million of a halogen.
  • a method of forming a latent image on a Xerographic plate which comprises applying an electrostatic charge to a photoconductive layer comprising selenium,
  • arsenic and a halogen
  • said halogen being present in a concentraton of about 10 to 10,000 parts per million, and exposing said charged layer to a pattern of activating electromagnetic radiation thereby forming a latent electrostatic image on said layer.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
US516529A 1963-07-08 1965-12-27 Xerographic plates Expired - Lifetime US3312548A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DENDAT1250737D DE1250737B (es) 1963-07-08
GB24426/64A GB1067223A (en) 1963-07-08 1964-06-12 Iodine doped xerographic plates
US516529A US3312548A (en) 1963-07-08 1965-12-27 Xerographic plates
US571150A US3467548A (en) 1963-07-08 1966-05-31 Method of making xerographic plate by vacuum evaporation of selenium alloy
DE1522711A DE1522711C3 (de) 1963-07-08 1966-12-14 Elektrophotographisches Aufzeichnungsmaterial
FR87870A FR1505803A (fr) 1963-07-08 1966-12-16 Cliché xérographique à base de sélénium et d'arsenic présentant une grande sensibilité à la lumière
GB57410/66A GB1165579A (en) 1963-07-08 1966-12-22 Xerographic Plate and Methods of Manufacture.

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US29335763A 1963-07-08 1963-07-08
US516529A US3312548A (en) 1963-07-08 1965-12-27 Xerographic plates
US57115066A 1966-05-31 1966-05-31
FR87870A FR1505803A (fr) 1963-07-08 1966-12-16 Cliché xérographique à base de sélénium et d'arsenic présentant une grande sensibilité à la lumière

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DE (2) DE1522711C3 (es)
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Cited By (34)

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US3427157A (en) * 1964-12-28 1969-02-11 Xerox Corp Xerographic process utilizing a photoconductive alloy of thallium in selenium
US3501343A (en) * 1966-02-16 1970-03-17 Xerox Corp Light insensitive xerographic plate and method for making same
US3511649A (en) * 1966-05-02 1970-05-12 Xerox Corp Process of reducing fatigue in photoconductive glasses
US3524745A (en) * 1967-01-13 1970-08-18 Xerox Corp Photoconductive alloy of arsenic,antimony and selenium
US3635705A (en) * 1969-06-03 1972-01-18 Xerox Corp Multilayered halogen-doped selenium photoconductive element
US3637381A (en) * 1966-09-22 1972-01-25 Teeg Research Inc Radiation-sensitive self-revealing elements and methods of making and utilizing the same
US3637378A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Radiation-sensitive element, provided with flexible base and methods for exposing and processing the same
US3639120A (en) * 1966-06-16 1972-02-01 Xerox Corp Two-layered photoconductive element containing a halogen-doped storage layer and a selenium alloy control layer
US3655377A (en) * 1966-10-03 1972-04-11 Xerox Corp Tri-layered selenium doped photoreceptor
FR2201490A1 (es) * 1972-09-30 1974-04-26 Licentia Gmbh
US3837849A (en) * 1973-02-20 1974-09-24 Xerox Corp Multilayered variable speed photoreceptor and method of using same
US3887367A (en) * 1973-12-26 1975-06-03 Xerox Corp Method for temperature stabilizing photoreceptors
US3887368A (en) * 1966-05-16 1975-06-03 Xerox Corp Composition
US3898083A (en) * 1973-01-05 1975-08-05 Xerox Corp High sensitivity visible infrared photoconductor
US3904408A (en) * 1969-11-14 1975-09-09 Canon Kk Electrophotographic member with graded tellurium content
US3912511A (en) * 1970-05-18 1975-10-14 Xerox Corp Multicomponent organic coating of polyester, polyurethane and a humidity barrier thermoplastic resin
DE2437268A1 (de) * 1974-08-02 1976-02-19 Licentia Gmbh Elektrophotographisches aufzeichnungsmaterial
US3966470A (en) * 1973-08-22 1976-06-29 Veb Pentacon Dresden Photo-conductive coating containing Ge, S, and Pb or Sn
US3973960A (en) * 1973-02-03 1976-08-10 Licentia Patent-Verwaltungs-G.M.B.H. Electrophotographic element having a selenium layer containing arsenic in varying concentrations across the layer thickness
US3989860A (en) * 1974-07-22 1976-11-02 Xerox Corporation Repair technique for photoreceptors
US4011079A (en) * 1973-08-02 1977-03-08 Licentia Patent-Verwaltungs-G.M.B.H. Method for producing an electrophotographic recording material
US4140529A (en) * 1977-09-22 1979-02-20 Xerox Corporation Charge transport overlayer in photoconductive element and method of use
US4233384A (en) * 1979-04-30 1980-11-11 Xerox Corporation Imaging system using novel charge transport layer
US4297424A (en) * 1980-03-05 1981-10-27 Xerox Corporation Overcoated photoreceptor containing gold injecting layer
US4304829A (en) * 1977-09-22 1981-12-08 Xerox Corporation Imaging system with amino substituted phenyl methane charge transport layer
US4330610A (en) * 1980-03-05 1982-05-18 Xerox Corporation Method of imaging overcoated photoreceptor containing gold injecting layer
US4338387A (en) * 1981-03-02 1982-07-06 Xerox Corporation Overcoated photoreceptor containing inorganic electron trapping and hole trapping layers
EP0068187A2 (de) * 1981-06-13 1983-01-05 Alcatel N.V. Aufzeichnungsträger für die Elektrophotographie
US4414179A (en) * 1981-12-03 1983-11-08 Xerox Corporation Process for making photoreceptors
US4439509A (en) * 1982-06-01 1984-03-27 Xerox Corporation Process for preparing overcoated electrophotographic imaging members
US4440803A (en) * 1979-11-01 1984-04-03 Xerox Corporation Process for preparing arsenic-selenium photoreceptors
US4609605A (en) * 1985-03-04 1986-09-02 Xerox Corporation Multi-layered imaging member comprising selenium and tellurium
US6110631A (en) * 1997-05-14 2000-08-29 Fuji Electric Co., Ltd. Photoconductor for electrophotography and method of manufacturing and using a photoconductor
US10191186B2 (en) 2013-03-15 2019-01-29 Schott Corporation Optical bonding through the use of low-softening point optical glass for IR optical applications and products formed

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IL32745A (en) * 1968-08-22 1973-06-29 Energy Conversion Devices Inc Method and apparatus for producing,storing and retrieving information
US3861913A (en) * 1972-03-31 1975-01-21 Ibm Electrophotographic charge generation layer
US3899327A (en) * 1973-02-08 1975-08-12 Int Standard Electric Corp Charge carrier foil
US3925571A (en) * 1973-02-08 1975-12-09 Int Standard Electric Corp Method of making a selenium charge carrier plate
MX147918A (es) * 1977-03-31 1983-02-02 Xerox Corp Mejoras en aparato y metodo para producir una imagen visible sobre una superficie formadora de imagen fotoconductora
JPS5470041A (en) * 1977-11-15 1979-06-05 Stanley Electric Co Ltd Flexible multilayer xerographic photosensitive member
JPS5470838A (en) * 1977-11-17 1979-06-07 Canon Inc Photosensitive element for zerography
US4296191A (en) * 1980-06-16 1981-10-20 Minnesota Mining And Manufacturing Company Two-layered photoreceptor containing a selenium-tellurium layer and an arsenic-selenium over layer
US4554230A (en) * 1984-06-11 1985-11-19 Xerox Corporation Electrophotographic imaging member with interface layer
US4572883A (en) * 1984-06-11 1986-02-25 Xerox Corporation Electrophotographic imaging member with charge injection layer
USRE35246E (en) * 1987-06-18 1996-05-21 Fuji Electric Co., Ltd. Layed photosensitive material and electrophotography comprising selenium, arsenic and tellurium
JPS63316059A (ja) * 1987-06-18 1988-12-23 Fuji Electric Co Ltd 電子写真用感光体
JP2962300B2 (ja) * 1998-02-02 1999-10-12 富士電機株式会社 電子写真用感光体

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Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427157A (en) * 1964-12-28 1969-02-11 Xerox Corp Xerographic process utilizing a photoconductive alloy of thallium in selenium
US3501343A (en) * 1966-02-16 1970-03-17 Xerox Corp Light insensitive xerographic plate and method for making same
US3511649A (en) * 1966-05-02 1970-05-12 Xerox Corp Process of reducing fatigue in photoconductive glasses
US3887368A (en) * 1966-05-16 1975-06-03 Xerox Corp Composition
US3639120A (en) * 1966-06-16 1972-02-01 Xerox Corp Two-layered photoconductive element containing a halogen-doped storage layer and a selenium alloy control layer
US3637381A (en) * 1966-09-22 1972-01-25 Teeg Research Inc Radiation-sensitive self-revealing elements and methods of making and utilizing the same
US3655377A (en) * 1966-10-03 1972-04-11 Xerox Corp Tri-layered selenium doped photoreceptor
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Also Published As

Publication number Publication date
GB1067223A (en) 1967-05-03
DE1522711B2 (de) 1976-10-07
DE1522711A1 (de) 1969-10-30
FR1505803A (fr) 1967-12-15
GB1165579A (en) 1969-10-01
US3467548A (en) 1969-09-16
DE1250737B (es)
DE1522711C3 (de) 1982-02-18

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