US2745327A - Electrophotographic process - Google Patents
Electrophotographic process Download PDFInfo
- Publication number
- US2745327A US2745327A US287415A US28741552A US2745327A US 2745327 A US2745327 A US 2745327A US 287415 A US287415 A US 287415A US 28741552 A US28741552 A US 28741552A US 2745327 A US2745327 A US 2745327A
- Authority
- US
- United States
- Prior art keywords
- electrostatic
- insulating layer
- layer
- photoconductive insulating
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 14
- 229910052711 selenium Inorganic materials 0.000 claims description 14
- 239000011669 selenium Substances 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 4
- 238000005421 electrostatic potential Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Definitions
- This invention relates in general to the art of electrophotography, now known as xerography, and in particular to a sensitive plate for electrostatic electrophotography. More specifically, the invention relates to a new xerographic or electrophotographic member comprising a conductive backing having on at least one surface thereof a photoconductive insulating coating consisting of a mixture of selenium and tellurium.
- a member or plate which comprises a conductive backing member such as, for example, a metallic surface having a photoconductive insulating layer thereon.
- a suitable plate for this purpose is a metallic member having a layer of vitreous selenium.
- Such a plate is characterized by being capable of receiving a satisfactory electrostatic charge and selectively dissipating such a charge when exposed to a light pattern, and, in general, is largely sensitive to light in the blue green spectral range and in this spectral range has a photographic speed of about 0.5 A. S. A. with normal developing techniques.
- an improved electrophotographic or xerographic plate can be prepared by incorporation in the photoconductive insulating coating of a small quantity of tellurium.
- the plates as thus modified are characterized by a broader range of spectral sensitivity, particularly in the red spectral range and by an increased overall photographic speed.
- other advantages are believed to exist.
- the permissible range of concentration or proportion of tellurium in the selenium layer is relatively broad and may extend from about 0.1% to and preferably lies in the range of about 1% to 8% or about 5 Within these ranges the speed and spectral sensitivity are significantly improved and other qualities and properties of the layers are maintained or in some instances actually improved.
- the new and improved plates of the present invention can be prepared by a variety of methods.
- selenium and tellurium in the desired proportions may be mixed and in molten form sprayed on the desired surface, or they may be evaporated onto the plate under high vacuum, preferably from a mixture in a single evaporation source or, optionally, from two separate sources operating to volatilize their contents at the desired speed ratio.
- the mixed ingredients may be placed in a suitable film forming binder and applied to the surface in the form of a selenium-tellurium lacquer.
- Example 1 An aluminum plate is prepared for coating by careful washing with water containing a small amount of detergent, after which it is dried and then immersion in an organic solvent such as,
- the plate as thus "preparedhas a coating of resistivity .at least 10 ⁇ ? ohms-cm. and is characterized by the ability l0 to accept an electrostatic charge on its surface of greater than 300 volts and by the ability to retain such a charge in the absence of illumination for a period of more than 10 minutes.
- the electrostatic potential on the surface is almost immediately dissipated to a low residual potential.
- the charge is selectively dissipated to yield an electrostatic latent image which in turn can be developed by an electrostatically attractable powder to yield a visible powder image.
- Example. 2.--A mixture is prepared of 92% selenium and 8% tellurium and this mixture melted and placed in a spray gun. In an atmosphere of nitrogen the molten mixture is sprayed on a cleaned brass surface to form a 50 micron photoconductive insulating coating of seleniumtellurium mixture on the metallic surface. The surface is lightly buffed to remove irregularities without heating the surface at any time above about C. The resulting product is a suitable and satisfactory electrophotographic plate.
- the plates prepared by the above method are similar in physical appearance to plates having a layer of substantially pure vitreous selenium.
- the plates are glossy in appearance and have a dark red almost black color. It is believed that the allotropic structure of the photoconductive insulating layer is largely amorphous although it is to be understood that crystalline varieties of selenium ortellurium may be present and probably are present in limited proportion.
- the plate has a specific resistivity of at least 10 ohms-cm. and generally about 10 ohms-cm. in the absence of illumination, which resistivity drops several orders upon illumination. It is photoconductively sensitive to radiation in the blue green spectral range and in addition has substantial sensitivity in the red spectral range. Its photographic sensitivity in white light is significantly greater than the photographic sensitivity of a pure selenium plate.
- the backing member selected for this plate may be in the form of a fiat plate or may equally be in the form of a cylinder, flexible sheet or other member having a surface suitable for the electrophotographic process.
- the member may be a metallic surface or may, if desired be an electrically conductive non metallic member such as conductive plastic, conductive glass, conductively coated paper or other web or filmlike member, or other conductive supporting surface, as desired.
- An electrophotographic process comprising placing an electrostatic charge on the surface of an electrophotographic member comprising a photoconductive insulating layer having a resistivityof at least about 10 ohms-cm. in darkness and capable of accepting an electrostatic potential of at least 300 volts and substantially retaining said potential for at least 10 minutes in the absence of illumination and capable of rapidly dissipating this charge by increased said layer being a substantially vitreous uniform mixture of between about 0.1% to 10% tellurium and the remainder substantially vitreous selenium overlying and in electrically conductive contact with a conductive backing member, selectively dissipating electrostatic charge conductivity upon exposure to light,
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
degreased by United States Patent 2,745,327 ELECTROPHOTOGRAPHIC PROCESS Otavio J. Mengali, Columbus, Ohio,
assignments, to The Haloid Company, a corporation of New York No Drawing. Application a 12, 1952, Serial No. 287,415
3 Claims. (Cl. 951.3)
assignor, by mesne Rochester, N. Y.,
This invention relates in general to the art of electrophotography, now known as xerography, and in particular to a sensitive plate for electrostatic electrophotography. More specifically, the invention relates to a new xerographic or electrophotographic member comprising a conductive backing having on at least one surface thereof a photoconductive insulating coating consisting of a mixture of selenium and tellurium.
In the art of xerography, it is usual to form an electrostatic latent image on a member or plate which comprises a conductive backing member such as, for example, a metallic surface having a photoconductive insulating layer thereon. It has previously been found that a suitable plate for this purpose is a metallic member having a layer of vitreous selenium. Such a plate is characterized by being capable of receiving a satisfactory electrostatic charge and selectively dissipating such a charge when exposed to a light pattern, and, in general, is largely sensitive to light in the blue green spectral range and in this spectral range has a photographic speed of about 0.5 A. S. A. with normal developing techniques.
Now in accordance with the present invention it has been found that an improved electrophotographic or xerographic plate can be prepared by incorporation in the photoconductive insulating coating of a small quantity of tellurium. The plates as thus modified are characterized by a broader range of spectral sensitivity, particularly in the red spectral range and by an increased overall photographic speed. In addition, other advantages are believed to exist.
In general, the permissible range of concentration or proportion of tellurium in the selenium layer is relatively broad and may extend from about 0.1% to and preferably lies in the range of about 1% to 8% or about 5 Within these ranges the speed and spectral sensitivity are significantly improved and other qualities and properties of the layers are maintained or in some instances actually improved.
The new and improved plates of the present invention can be prepared by a variety of methods. For example, selenium and tellurium in the desired proportions may be mixed and in molten form sprayed on the desired surface, or they may be evaporated onto the plate under high vacuum, preferably from a mixture in a single evaporation source or, optionally, from two separate sources operating to volatilize their contents at the desired speed ratio. Likewise, the mixed ingredients may be placed in a suitable film forming binder and applied to the surface in the form of a selenium-tellurium lacquer.
The general scope and nature of the invention having been set forth, the following examples are given as typical illustrations of methods by which the desired plates may be prepared:
Example 1.-An aluminum plate is prepared for coating by careful washing with water containing a small amount of detergent, after which it is dried and then immersion in an organic solvent such as,
for example, tri-chloro ethylene. A mixture of about 2,745,327 Patented May 15, 1956 parts by weight selenium and about 5 parts by weight tellurium is melted together and maintained in a molten condition for an hour to assure uniformity of mixture. The selenium-tellurium mixture is flowed across the surface of the plate andthe plate with the molten coating on his rapidly spunfto'smooth out the surface, and the spinning continued un 'l the coating is solidified.
. The plate as thus "preparedhas a coating of resistivity .at least 10}? ohms-cm. and is characterized by the ability l0 to accept an electrostatic charge on its surface of greater than 300 volts and by the ability to retain such a charge in the absence of illumination for a period of more than 10 minutes. When exposed to mild illumination the electrostatic potential on the surface is almost immediately dissipated to a low residual potential. When the charged plate was exposed to a light pattern or optical image, the charge is selectively dissipated to yield an electrostatic latent image which in turn can be developed by an electrostatically attractable powder to yield a visible powder image.
Example. 2.--A mixture is prepared of 92% selenium and 8% tellurium and this mixture melted and placed in a spray gun. In an atmosphere of nitrogen the molten mixture is sprayed on a cleaned brass surface to form a 50 micron photoconductive insulating coating of seleniumtellurium mixture on the metallic surface. The surface is lightly buffed to remove irregularities without heating the surface at any time above about C. The resulting product is a suitable and satisfactory electrophotographic plate.
In general, the plates prepared by the above method are similar in physical appearance to plates having a layer of substantially pure vitreous selenium. The plates are glossy in appearance and have a dark red almost black color. It is believed that the allotropic structure of the photoconductive insulating layer is largely amorphous although it is to be understood that crystalline varieties of selenium ortellurium may be present and probably are present in limited proportion. The plate has a specific resistivity of at least 10 ohms-cm. and generally about 10 ohms-cm. in the absence of illumination, which resistivity drops several orders upon illumination. It is photoconductively sensitive to radiation in the blue green spectral range and in addition has substantial sensitivity in the red spectral range. Its photographic sensitivity in white light is significantly greater than the photographic sensitivity of a pure selenium plate.
It is to be understood that the backing member selected for this plate may be in the form of a fiat plate or may equally be in the form of a cylinder, flexible sheet or other member having a surface suitable for the electrophotographic process. The member may be a metallic surface or may, if desired be an electrically conductive non metallic member such as conductive plastic, conductive glass, conductively coated paper or other web or filmlike member, or other conductive supporting surface, as desired.
What is claimed is:
1. An electrophotographic process comprising placing an electrostatic charge on the surface of an electrophotographic member comprising a photoconductive insulating layer having a resistivityof at least about 10 ohms-cm. in darkness and capable of accepting an electrostatic potential of at least 300 volts and substantially retaining said potential for at least 10 minutes in the absence of illumination and capable of rapidly dissipating this charge by increased said layer being a substantially vitreous uniform mixture of between about 0.1% to 10% tellurium and the remainder substantially vitreous selenium overlying and in electrically conductive contact with a conductive backing member, selectively dissipating electrostatic charge conductivity upon exposure to light,
from the surface of the charged photoconductive insulat- 2,199,104 Johnson et al. Apr. 30, 1940 mg layer by exposing the charged layer to a light image 2,297,691 Carlson Oct. 6, 1942 thereby creating an electrostatic latent image on the sur- 2,575,392 Peters et a1 Nov. 20, 1951 face of the photoconductive insulatinglayer, and de- 2,608,611 Shive Aug. 26,1952 7 veloping said electrostatic latent image with electrically 5 2,619,418 Mayo Nov; 25, 1952 charged powder particles. Y f 7 2,662,832 Middleton et al. Dec. 15, 1953 2..A process according to claim 1 in which the photoa conductive insulating layer is-abou t'5'% to about 10% Q Q T' E tellurium and the remainder substantially selenium. 1 284,942 Great 'f P 19,28 3. A process according to claim 1 in which the photo- 10 311,662 Great f fl 30, 1930 conductive insulating layeris about 5% to about 10% 3431939 Great e i"; Feb? 1931 tellurium and the remainder substantially selenium, the 358,672 Great Brltalll 1931 conductive backing member comprising aluminum. OTHER REFERENCES 'An X-Ray Study of the Structure of Rectifyiug: Regerences Clted mthe file ofvthls patent Selenium Films, Clark et al.; The Electrochemical So- UNITED STATES PAT ciety; vol. 79; 1941; pages 355-365; page 359 particularly 1,491,040 Hart j rt Ap a-22, 1924 relied. upon.
Claims (1)
1. AN ELECTROPHOTOGRAPHIC PROCESS COMPRISING PLACING AN ELECTROSTATIC CHANGE ON THE SURFACE OF AN ELECTROPHOTOGRAPHIC MEMBER COMPRISING A PHOTOCONDUCTIVE INSULATING LAYER HAVING A RESISTIVITY OF AT LEAST ABOUT 1014 OHMS-CM. IN DARKNESS AND CAPABLE OF ACCEPTING AN ELECTROSTATIC POTENTIAL OF AT LEAST 300 VOLTS AND SUBSTANTIALLY RETAINING SAID POTENTIAL FOR AT LEAST 10 MINUTES IN THE ABSENCE OF ILLUMINATION AND CAPABLE OF RAPIDLY DISSIPATING THIS CHARGE BY INCREASED CONDUCTIVITY UPON EXPOSURE TO LIGHT, SAID LAYER BEING A SUBSTANTIALLY VITREOUS UNIFORM MIXTURE OF BETWEEN ABOUT 0.1% TO 10% TELLURIUM AND THE REMAINDER SUBSTANTIALLY VITREOUS SELENIUM OVERLYING AND IN ELECTRICALLY CONDUCTIVE CONTACT WITH A CONDUCTIVE BACKING MEMBER, SELECTIVELY DISSIPATING ELECTROSTATIC CHARGE FROM THE SURFACE OF THE CHARGED PHOTOCONDUCTIVE INSULATING LAYER BY EXPOSING THE CHARGED LAYER TO A LIGHT IMAGE THEREBY CREATING AN ELECTROSTATIC LATENT IMAGE ON THE SURFACE OF THE PHOTOCONDUCTIVE INSULATING LAYER, AND DEVELOPING SAID ELECTROSTATIC LATENT IMAGE WITH ELECTRICALLY CHARGED POWDER PARTICLES.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US287415A US2745327A (en) | 1952-05-12 | 1952-05-12 | Electrophotographic process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US287415A US2745327A (en) | 1952-05-12 | 1952-05-12 | Electrophotographic process |
Publications (1)
Publication Number | Publication Date |
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US2745327A true US2745327A (en) | 1956-05-15 |
Family
ID=23102797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US287415A Expired - Lifetime US2745327A (en) | 1952-05-12 | 1952-05-12 | Electrophotographic process |
Country Status (1)
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US (1) | US2745327A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3639120A (en) * | 1966-06-16 | 1972-02-01 | Xerox Corp | Two-layered photoconductive element containing a halogen-doped storage layer and a selenium alloy control layer |
US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
US3816108A (en) * | 1971-12-22 | 1974-06-11 | Nippon Telegraph & Telephone | Semiconductor granules for use in acoustic-electro converting devices |
US3867143A (en) * | 1969-01-17 | 1975-02-18 | Canon Kk | Electrophotographic photosensitive material |
US3957693A (en) * | 1968-03-19 | 1976-05-18 | Siemens Aktiengesellschaft | Process for producing selenium homogeneously doped with tellurium |
FR2458100A1 (en) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | PHOTOCONDUCTIVE MATERIAL FOR ELECTROPHOTOGRAPHIC COPYING MACHINE |
US4255505A (en) * | 1969-11-11 | 1981-03-10 | Canon Kabushiki Kaisha | Electrophotographic process using layered element containing p-type or n-type materials, with multiple charging steps and blanket irradiation |
US4296191A (en) * | 1980-06-16 | 1981-10-20 | Minnesota Mining And Manufacturing Company | Two-layered photoreceptor containing a selenium-tellurium layer and an arsenic-selenium over layer |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1491040A (en) * | 1921-03-24 | 1924-04-22 | Hart Russell | Process of manufacturing selenium cells for photo-electric work and crystal radiodetectors |
GB284942A (en) * | 1927-08-06 | 1928-02-09 | John Neale | Improvements in selenium cells |
GB311662A (en) * | 1928-05-11 | 1930-01-30 | Telefunken Gmbh | Improvements in or relating to cells which are sensitive to infra-red rays |
GB343939A (en) * | 1929-11-25 | 1931-02-25 | Frederick Hurn Constable | Means for the stabilising of light-sensitive films |
GB358672A (en) * | 1930-09-03 | 1931-10-15 | Frederick Hurn Constable | Improvements relating to the control of the characteristics of light-sensitive materials |
US2199104A (en) * | 1936-02-27 | 1940-04-30 | Gen Electric Co Ltd | Manufacture of selenium surfaces |
US2297691A (en) * | 1939-04-04 | 1942-10-06 | Chester F Carlson | Electrophotography |
US2575392A (en) * | 1947-12-11 | 1951-11-20 | Vickers Inc | Method of annealing a selenium coating |
US2608611A (en) * | 1949-08-17 | 1952-08-26 | Bell Telephone Labor Inc | Selenium rectifier including tellurium and method of making it |
US2619418A (en) * | 1950-12-30 | 1952-11-25 | Haloid Co | Xerographic plate holder |
US2662832A (en) * | 1950-04-08 | 1953-12-15 | Haloid Co | Process of producing an electrophotographic plate |
-
1952
- 1952-05-12 US US287415A patent/US2745327A/en not_active Expired - Lifetime
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1491040A (en) * | 1921-03-24 | 1924-04-22 | Hart Russell | Process of manufacturing selenium cells for photo-electric work and crystal radiodetectors |
GB284942A (en) * | 1927-08-06 | 1928-02-09 | John Neale | Improvements in selenium cells |
GB311662A (en) * | 1928-05-11 | 1930-01-30 | Telefunken Gmbh | Improvements in or relating to cells which are sensitive to infra-red rays |
GB343939A (en) * | 1929-11-25 | 1931-02-25 | Frederick Hurn Constable | Means for the stabilising of light-sensitive films |
GB358672A (en) * | 1930-09-03 | 1931-10-15 | Frederick Hurn Constable | Improvements relating to the control of the characteristics of light-sensitive materials |
US2199104A (en) * | 1936-02-27 | 1940-04-30 | Gen Electric Co Ltd | Manufacture of selenium surfaces |
US2297691A (en) * | 1939-04-04 | 1942-10-06 | Chester F Carlson | Electrophotography |
US2575392A (en) * | 1947-12-11 | 1951-11-20 | Vickers Inc | Method of annealing a selenium coating |
US2608611A (en) * | 1949-08-17 | 1952-08-26 | Bell Telephone Labor Inc | Selenium rectifier including tellurium and method of making it |
US2662832A (en) * | 1950-04-08 | 1953-12-15 | Haloid Co | Process of producing an electrophotographic plate |
US2619418A (en) * | 1950-12-30 | 1952-11-25 | Haloid Co | Xerographic plate holder |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3639120A (en) * | 1966-06-16 | 1972-02-01 | Xerox Corp | Two-layered photoconductive element containing a halogen-doped storage layer and a selenium alloy control layer |
US3957693A (en) * | 1968-03-19 | 1976-05-18 | Siemens Aktiengesellschaft | Process for producing selenium homogeneously doped with tellurium |
US3867143A (en) * | 1969-01-17 | 1975-02-18 | Canon Kk | Electrophotographic photosensitive material |
US4255505A (en) * | 1969-11-11 | 1981-03-10 | Canon Kabushiki Kaisha | Electrophotographic process using layered element containing p-type or n-type materials, with multiple charging steps and blanket irradiation |
US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
US3816108A (en) * | 1971-12-22 | 1974-06-11 | Nippon Telegraph & Telephone | Semiconductor granules for use in acoustic-electro converting devices |
FR2458100A1 (en) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | PHOTOCONDUCTIVE MATERIAL FOR ELECTROPHOTOGRAPHIC COPYING MACHINE |
US4296191A (en) * | 1980-06-16 | 1981-10-20 | Minnesota Mining And Manufacturing Company | Two-layered photoreceptor containing a selenium-tellurium layer and an arsenic-selenium over layer |
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