JPS5913021B2 - Composite photoreceptor material - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION This invention relates to xerography, and more particularly to photoreceptors having stable interlayers.

Xerographic technology uses a photosensitive element that includes a photoconductive insulator layer that is first uniformly charged to render its surface photosensitive. The plate is then exposed to an image of activating electromagnetic radiation, such as light, x-rays, etc., to selectively dissipate the charge in the exposed areas of the photoconductive insulator, leaving an electrostatic latent image in the unexposed areas. The electrostatic latent image can then be developed into a visible image by depositing finely divided electroscopic particles on the surface of the photoconductive insulator layer. This concept was first disclosed by Carlson in US Pat. No. 2,297,691 and has been further expanded upon and described by numerous related patents in this field. The vitreous selenium described in U.S. Pat. No. 2,970,906 is commercially available because it has the ability to retain a static charge for a relatively long period of time without exposure to light and is relatively photosensitive compared to other photoconductive materials. It is used as the most widely used photoconductor in xerography.

U.S. Patent No. 2803542 and U.S. Patent No. 2822
No. 300 describes the concept of improving the properties of vitreous selenium by adding up to about 50% by weight of elemental arsenic.

Arsenic concentrations above about 10% by weight increase spectral sensitivity in the yellow-red band of the electromagnetic spectrum. US Patent No. 2803
No. 541 describes a two-layer photoreceptor structure consisting of a selenium layer and a selenium-arsenic alloy layer.

In this case, the improvement in photosensitivity is due to the use of a vitreous selenium-tellurium top layer on the selenium layer.

However, this structure is not sufficiently wear resistant for automatic xerography and copier operation and also exhibits a high degree of dark discharge. Although organic and inorganic protective coatings have been developed to improve abrasion resistance, the main problem with these coatings is their inability to function properly in a wide range of environmental conditions. US Patent No. 3
No. 655377 discloses the addition of arsenic to improve wear resistance, temperature stability and dark decay. A top layer of selenium alloy and selenium to provide full color photosensitivity. A second layer of tellurium alloy and arsenic doped with selenium or halogen for xerography.
A three-layer structure or three-layer photoreceptor is described, consisting of a bottom selenium layer.

However, the Setyak patent does not mention a ternary alloy as the member or intermediate layer of the present invention, but instead uses a binary alloy as the intermediate layer. Also, U.S. Patent No. 3
655377, inventor Secha
K) is also unaware of the problem with loss of electrical properties of three-layer photoreceptors when aged at high temperatures, ie, temperatures above 46.1°C. U.S. Pat. No. 3,861,913 discloses a conductive substrate, a charge transport layer and a charge generating layer consisting essentially of 5 to 35 weight percent tellurium, 0.5 to 20 weight percent arsenic, and approximately the balance vitreous selenium. A xerographic plate consisting of

This patent does not disclose the three-layer member of the present invention, nor does it disclose the three-layer member of the present invention.
Nor is there any discussion of problems associated with the loss of electrical properties of layered photoreceptors at high temperatures, ie, temperatures above 46.1°C. Arsenic. The top layer of selenium alloy and selenium. A second or intermediate layer of tellurium alloy and vitreous selenium or arsenic.
When using a three-layer photoreceptor comprising a third layer of selenium, it has been found that accelerated high thermal aging or prolonged exposure to high temperatures significantly degrades the electrical properties of the photoreceptor.

This is thought to be because a portion of the tellurium in the intermediate layer migrates into the adjacent top or bottom layer, resulting in the above-mentioned deterioration of the electrical properties. Therefore, arsenic was added to the intermediate layer to form the intermediate layer of the three-layer photoreceptor. tellurium. It has been discovered that the formation of a selenium alloy prevents deterioration of the electrical properties of the photoreceptor even through accelerated high thermal aging or prolonged exposure to temperatures above ambient temperature. We believe that the addition of arsenic to the interlayer inhibits the migration of tellurium from the interlayer, allowing the three layer photoreceptor to retain its maximum capacity for an extended period of time. Accordingly, one object of the present invention is to provide a composite three-layer photoreceptor that can overcome the above-mentioned drawbacks. Another object of the present invention is to provide a three-layer photoreceptor with greatly improved stability of electrical properties over long periods of time at elevated temperatures. Yet another object of the present invention is to provide a novel photoreceptor.

These and other objects of the present invention are achieved by providing a composite three layer photoreceptor.

The photoreceptor of the present invention contains arsenic. A top layer of selenium alloy and arsenic tellurium prevents deterioration of the photoreceptor's electrical properties during accelerated heat aging or when exposed to temperatures above ambient temperature for extended periods.
Interlayer of selenium alloy and vitreous selenium or arsenic. Arsenic doped with selenium alloys or halogens. and a bottom layer of selenium alloy. This multilayer photoreceptor can be coated or deposited onto standard xerographic substrates by methods known in the art. The benefits of the improved photoreceptor of the present invention will become apparent from reading the following description, particularly with reference to the accompanying drawings. FIG. 1 is a schematic diagram of one embodiment of the present invention comprising a multilayer xerographic photoreceptor.

This multilayer or three layer structure is referred to as a "three layer" photoreceptor. The photoreceptor 4 may be self-supporting or may have a conventional support member 5, either insulative or electrically conductive. Preferably, support member 5 is a conventional electrically conductive support such as brass, aluminum, nickel, steel or other suitable material. The support member 5 may be of conventional thickness, rigid or flexible, and may be of any desired shape, such as a sheet, web, plate, cylinder, drum or other suitable shape. The support member 5 may also be a metal such as aluminum, a plastic sheet coated with a thin layer of copper oxide, or glass coated with a thin layer of chromium or tin oxide. If desired, the photoreceptor can be formed on an insulative support and charged by xerographic reproduction techniques known in the xerographic art for photoreceptors having an insulating backing layer. As mentioned above, element 5 may optionally be omitted altogether. Layer 1 is vitreous selenium or vitreous arsenic. Consists of a first layer of selenium alloy. Preferably, layer 1 comprises a vitreous arsenic selenium alloy containing up to about 3.0% arsenic, and layer 1 comprises from about 0.1 to about 2.0% arsenic, more preferably about It contains up to 1.0% arsenic, most preferably up to about 0.5% arsenic, with the balance being selenium.

Layer 1 is vitreous selenium or arsenic. In the case of a selenium alloy, layer 1 may contain a halogen dopant. Preferred...logen dopants consist essentially of chlorine, bromine and iodine. The halogen dopant is preferably about 5 pp.
m to about 10,000 ppm. Layer 1 may have a thickness of about 10 to about 300 microns, preferably about 40 microns.
~100 microns, more preferably about 52.0-68.
0 microns, most preferably 60 microns. layer 2
is the second or intermediate layer, and the vitreous arsenic . tellurium. Consists of a second layer of selenium alloy.

Glassy arsenic. tellurium. Intermediate layer 2 comprises a second layer of selenium alloy with about 0.1 to about 40.0 weight percent arsenic and about 1.0 weight percent arsenic.
It can include ˜50.0% by weight tellurium and about 50.0-90.0% by weight selenium. More preferably, arsenic. tellurium. Selenium alloy layer 2 may include about 3.0 to about 5.0 weight percent arsenic, about 15.0 to 25.0 weight percent tellurium, and the balance selenium. Approximately 3
．． Arsenic in the range of 0 to 5.0% by weight has been found to be particularly desirable. A particularly preferred composition for layer 2 is about 4.0% by weight arsenic, about 20.5% by weight tellurium, and about 75.5% by weight selenium. The fact that layer 2 contains arsenic means that the presence of arsenic results in a photoreceptor that retains its electrical properties during accelerated thermal aging and when exposed to high temperatures, i.e., temperatures above 46.1° C., for long periods of time. Therefore, it is important. The intermediate layer 2 is preferably a vitreous arsenic containing a rogen dopant. tellurium. It can also be made of a selenium alloy.

This halogen dopant may be of the same substance and concentration as described for layer 1. The thickness of layer 2 is about 0.1~
May be about 2.0 microns, preferably about 0.1-1.0
microns, more preferably 0.1 to 0.5 microns, most preferably 0.3 microns. Layer 3 is the top or third layer and is a vitreous arsenic layer covering layer 2. Consists of a selenium alloy layer.

Preferably, layer 3 contains about 0.1 to about 40.0% by weight, preferably about 0.1 to about 5.0% by weight, more preferably about 0.
．． Arsenic containing 1 to about 3.0% by weight arsenic and the balance selenium. Consists of selenium alloy. Layer 3 may also be doped with halogen. The halogen dopant may be of the same substance and concentration as described for layers 1 and 2. The thickness of layer 3 may be about 0.1 to about 5.0 microns, preferably about 1.0 to 4.0 microns, and most preferably about 3.0 microns.

The member 4 may consist of a photoconductive member.

The member 4 may include a support 5 on which a first layer 1 of vitreous selenium is disposed. is covered. Coated on layer 1 is a second layer 2 of a vitreous arsenic-tellurium-selenium alloy. Coated on layer 2 is a third layer 3 of a vitreous arsenic-selenium alloy. First layer 1. The thickness is about 40~100mm
microns, up to about 1.0% by weight, preferably about 0
．． It can contain up to 5% by weight arsenic and the balance selenium. The second layer 2 of arsenic/tellurium/selenium has a thickness of approximately 0.
1 to about 1.0 microns, up to about 40.0% arsenic and up to about 50.0% tellurium, preferably up to about 5.0% arsenic and up to about 25.0% by weight. It can contain tellurium and residual selenium. All three layers, layer 1, layer 2, layer 3, may be doped with halogen.

The halogen is preferably selected from the group consisting of chlorine, bromine and iodine, and the preferred concentration of halogen is from about 5 ppm to
It is about 10,000 ppm. If the substrate 5 is conductive in conventional xerography, the substrate 5 is generally grounded during the charging process to facilitate the deposition of a uniform charge layer on the layer 3.

The photoreceptor 4 can be charged, for example, by using a soft brush or fur to coat the layer 4.
This can be readily accomplished in a variety of ways, such as by rubbing or, more preferably, using corona charging methods and apparatus, such as those described in US Pat. Nos. 2,836,725 and 2,777,957. Charging is typically performed in the absence of actinic radiation, or radiation that renders the irradiated portion of the photoreceptor relatively electrically conductive. After charging, the next step in conventional xerography is to expose the photoreceptor 4 to a pattern of electromagnetic radiation to discharge the exposed areas of the photoreceptor relative to the unexposed areas, creating an electrostatic charge on or in the surface of the photoreceptor. Form a latent image. Other methods of imaging on photoreceptor 4 are also known in the art, and some of these methods include first forming an image on a separate photoconductive insulator layer by conventional xerography techniques as described above. After forming a charge pattern, this insulator layer and layer 3 of photoreceptor 4 are brought into close proximity, as described in, for example, U.S. Pat.
No. 982647 and No. 2825814 and No. 29
Methods include transferring the charge pattern to layer 3 using a breakdown method as described in No. 37,943.

Also, U.S. Patent Nos. 3,023,731 and 29199
STES described in No. 67 [discharge method or U.S. Pat.
No. 1,848 and No. 3,001,849, as well as electron beam recording methods known in the art and preferred as described in U.S. Pat. A charge pattern can be formed on layer 3. The latent image is then generally made into a visible image.

That is, the latent image is brought into contact with a finely powdered electroscopic material, which is generally electrostatically charged to the opposite polarity as the electrostatic latent image, by bringing such material into surface contact with the layer 3; The material is developed by depositing it on layer 3 in a pattern corresponding to the latent image. Any suitable development method can be used to develop the latent image on the photoreceptor of the present invention, and many such development methods are known in the art.

For example, cascade development systems, which are widely used commercially, generally consist of allowing a two-component developer of the type described in U.S. Pat. No. 2,638,416 to fall by gravity onto a photoreceptor carrying a latent image. .

The above two components consist of an electrodetecting powder called 1 toner and a granular material called 4 carrier 2, and by mixing these, triboelectricity of opposite polarity is obtained. During the development process, a toner component, usually with an opposite charge to the latent image, adheres to the electrostatic latent image and converts the latent image into a visible image. Other typical development methods include, for example, U.S. Pat.
No. 930351, No. 2791949, No. 301530
Magnetic brush development methods described in US Pat. No. 5, eg, US Pat.
No. 776, No. 2551582, No. 2690394,
No. 2761416, No. 2928575, No. 3064
No. 622, No. 3068115, No. 3084043,
No. 2907674, No. 3001888, No. 3032
432, the fluid development method described in No. 3,078,231, the skid development method described in U.S. Pat. No. 2,895,847, and others. After development, the loosely adhered powder image can be transferred to another support surface and fixed to the support surface by solvent vapor, heat, or other suitable means to make the image permanent.

Alternatively, a loosely attached powder image can be fixed directly onto the photoreceptor as a result of a development step or another step after development. Referring to Figure 2, this figure shows a top layer of an alloy of about 0.5 wt.% arsenic and 99.5 wt.% selenium about 3.0 microns thick; Mi.
An intermediate layer of an alloy of about 25% tellurium and 75% selenium by weight and a thickness of about 60.0 microns and 20p.
Figure 3 shows a sensitivity curve for a three layer photoreceptor member consisting of a bottom layer of an alloy of approximately 0.33 wt% arsenic and 99.66 wt% selenium doped with pm chlorine. As mentioned above, the intermediate or second layer of this photoreceptor member does not contain arsenic. The member is irradiated with a helium neon laser that emits 6328 angstroms of activating radiation. The vertical axis of this figure shows the surface potential (volts). The horizontal axis indicates the relative irradiation amount (microwatts: 1 μW) of the laser. The above member was first charged to a surface potential of 800 volts, then 63 volts.
A helium neon laser emitting 28 angstroms of activating radiation was used to generate a stepwise discharge by irradiating the photoreceptor with increasingly large amounts of activating radiation measured in microwatts. After multiple irradiations, the component was significantly discharged to approximately 110 volts. This initial sample was then subjected to accelerated hyperthermia aging at 51.7° C. for 7 days. The member was again charged to a surface potential of 800 volts and irradiated with activating radiation in stages under the same conditions as before. After the same conditions and the same number of irradiations as before, the part was discharged to about 700 volts. This is shown by the upper curve in FIG. FIG. 3 also shows a sensitivity curve for a three-layer member similar to that described in connection with FIG. 2, also without arsenic in the intermediate layer.

This member was subjected to initial and accelerated heat aging at 51.7°C for 3 days (hereinafter referred to as accelerated heat aging) and 51.7°C.
Radiation irradiation was performed after accelerated heat aging for 7 days at ℃. Fourth
The figure shows an example in which similar members are used under the same conditions as in Figure 3.

However, in FIG. 4, irradiation was performed at the initial stage and after accelerated heat aging at 51.7° C. for 7 days. FIG. 5 shows standard sensitivity curves for a member of the invention initially and after accelerated heat aging at 51.7° C. for 7 days.

The member of FIG. 5 has a top layer of an alloy of about 0.5% arsenic and 99.5% selenium by weight about 3.0 microns thick, and a top layer of about 0.65 microns thick and about 3% selenium by weight. .5 wt.% arsenic, 20.5 wt.% tellurium, balance selenium ternary alloy interlayer with a thickness of about 60 microns and about 0.33 wt.% arsenic doped with 20 ppm chlorine. and a bottom layer of an alloy with 99.66% by weight selenium. The member was initially fully charged to a surface potential of 800 volts and then irradiated with activating radiation (in microwatts) from a helium neon laser emitting 6328 angstroms of activating radiation. The component was initially discharged to a surface potential of 75 volts. 51.7℃
, after accelerated heat aging for 7 days, this part still has a surface potential of 7
Discharged to 5 volts.

Next, FIGS. 6, 7, and 8 will be explained.

Here, the thickness of the intermediate layer of the photoreceptor used in FIGS. 6 and 7 is 0.3 microns, and the thickness of the intermediate layer in FIG. 8 is 0.3 microns.
．． It is 65 microns. In Figures 6 and 8, the parts were subjected to accelerated heat aging, initially and at 51.7°C, after 3 days and at 51°C.
．． Tests were conducted after 7 days at 7°C. As can be seen from FIGS. 6 and 8, there is almost no loss in sensitivity or electrical properties of any of the members after accelerated thermal aging. Figure 7 also shows the same results. However, the member shown in FIG. 7 was tested both initially and after aging at 51.7° C. for 7 days. When using a three-layer photoreceptor consisting of a top layer of arsenic-selenium alloy, a second layer or middle layer of selenium-tellurium alloy, and a third layer or bottom layer of vitreous selenium or arsenic-selenium, is it subjected to accelerated heat aging? Alternatively, it has been found that the electrical properties of this three-layer photoreceptor are significantly degraded when exposed to high temperatures, that is, temperatures of 46.1° C. or higher, for a long period of time.

It is believed that a portion of the tellurium in the intermediate layer of this three-layer photoreceptor migrates from the intermediate layer into the adjacent top or bottom layer, resulting in deterioration of the electrical properties of the photoreceptor. Therefore, the present inventor has proposed that by adding arsenic to the intermediate layer of a three-layer photoreceptor to form a ternary alloy of arsenic, tellurium, and selenium in the intermediate layer, In other words, it has been discovered that the deterioration of electrical properties that occurs when exposed to temperatures of 46.1° C. or higher can be prevented. It is believed that the addition of arsenic prevents tellurium migration from the interlayer, thereby greatly extending the maximum capacity retention period of the three layer photoreceptor. The three-layer photoreceptor of the present invention can be manufactured by any suitable method. One typical manufacturing method is vacuum deposition, in which each photoconductor layer is sequentially deposited onto a corresponding substrate. In this method, selenium or arsenic
The bottom layer or first layer of selenium alloy, the middle layer or second layer of arsenic-tellurium-selenium alloy, and the top layer or third layer of arsenic-selenium alloy are 10-5 and 10, respectively.
Deposited in separate steps under vacuum conditions of -7 TOrr.
An alternative to this method is to create selenium or selenium-arsenic for the bottom or first layer and arsenic-tellurium-selenium for the middle or second layer and the top or top layer or selenium in the same vacuum chamber without breaking the vacuum. A three layer photoreceptor is obtained by successively vacuum depositing one layer immediately after the next by sequentially activating three separate sources of arsenic and selenium for the three layers. Another typical manufacturing method is co-evaporation, in which the appropriate amount of material for each alloy layer is placed in separate heated crucibles held under vacuum conditions to achieve the desired The temperature of the source of each alloying component is adjusted to obtain a suitable percentage of alloy.

This method is described in US Pat. No. 3,940,903.

Another typical vapor deposition method is the flash vapor deposition method under vacuum conditions similar to those specified for the co-evaporation method.
In this method, a powder mixture such as arsenic, tellurium and selenium is selectively dropped into a hot crucible maintained at a temperature of about 400°C to 600°C.

Steam resulting from the heated mixture is deposited onto the substrate supported on the crucible. In all of the above methods, the substrate on which the photoconductive material is deposited is from about 50°C to
It is desirable to maintain a temperature of about 80°C.

If desired, a water-cooled platen or other suitable cooling means can be used to maintain constant substrate temperature. Generally, the bottom layer of selenium with a thickness of about 60 microns has a crucible temperature of about 2
This is obtained when the deposition is continued for about 1 hour at 80° C. and a vacuum of about 5×101 t0rr. U.S. Patent No. 2,803,542;
No. 2822300, No. 2901348, No. 2963
No. 376, No. 2970906 and No. 3077386 describe vacuum deposition methods suitable for forming the alloy layer of the present invention.

The crucible used for depositing the photoreceptor layer of the present invention is made of an inert material such as quartz, molybdenum, stainless steel vacuum coated with silicon monoxide, or other equivalent material.

The selenium or selenium alloy being deposited is maintained at a temperature between its melting point and boiling point. Photoreceptors of the present invention are capable of retaining their electrical properties when subjected to accelerated heat aging or when exposed to temperatures above ambient temperature, ie, above about 46.1° C., for extended periods of time.

The photoreceptor of the present invention also has improved dark decay properties. In addition, the sensitivity curve and Mottlln index (MOttlln
gindex), that is, the stepwise charging of the photoreceptor,
It is shown that there is little loss in the electrical properties of the photoreceptor of the present invention when subjected to accelerated heat aging or exposed to temperatures above ambient temperature, ie, 46.1° C. or higher, for extended periods of time. The Motling Index clearly shows that the photoreceptors of the present invention retain approximately the same sensitivity or electrical properties after accelerated thermal aging as when initially tested. A photoreceptor without the ability to charge uniformly and maintain a uniform surface potential is not desirable as a photoreceptor for cyclic use. The photoreceptor of the present invention has excellent uniform charging properties and the ability to maintain a uniform surface potential. A three-layer photoreceptor that does not contain arsenic in the intermediate or second layer does not have a uniform charging ability and is not subject to accelerated thermal aging or long-term high temperatures, i.e.
6. Inability to maintain a uniform surface potential when exposed to temperatures above 1°C. Examples of the method for manufacturing a three-layer photoreceptor of the present invention are shown below.

The percentages shown in the description, examples, and claims of this specification are percentages by weight unless otherwise specified. The following examples are provided to illustrate various preferred methods of making three layer photoreceptors. The photoreceptor alloy elements arsenic, tellurium, and selenium described in this specification and examples are all high-purity xerographic materials (arsenic and selenium purity 99. 999% by weight, tellurium 99.99% by weight). Example 1 Diameter: Approximately 85.725 TILm1 Length: Approximately 263.525 m
The oxidized aluminum substrate of m, ie, the aluminum drum having an aluminum oxide film on its surface, is placed in a vacuum chamber.

The starting alloy for the first or bottom layer of the three layer photoreceptor is prepared by placing elemental selenium shots approximately 1.5875 to 4.7625 mm in diameter into a SiO coated stainless steel evaporation boat. This evaporation boat is about 152.411cm from the drum surface! put it down. The second of the three-layer photoreceptor
The starting alloy for the layer or intermediate layer has a diameter of approximately 1.5875
~4.7625 u of elemental arsenic, tellurium, and selenium pellets were added to the first SiO-coated stainless steel boat in a ratio of 20.5 wt.% tellurium, 4.0 wt.% arsenic, and 75.5 wt.% selenium. A second Si placed nearby
Prepared by weighing into O-coated stainless steel boats.

The starting alloy for the third or top layer of the photoreceptor was Cr placed near the first SiO coated stainless steel boat.
Approximately 9.525 to 1 in diameter in O (chromic oxide) boat
It is prepared by weighing out 2.7 mm pellets of elemental arsenic and selenium in a ratio of 0.5% arsenic and 99.5% selenium by weight.

Each boat is connected directly to a power source which is adapted to regulate the temperature of each boat. Next, while rotating the drum at about 10 rpm, the vacuum chamber is evacuated and the drum is rotated at about 10 rpm.
Make a vacuum of 5t0rr. A first boat containing selenium is heated to a temperature of about 310° C. for about 35 minutes to form a vitreous selenium layer about 60 microns thick on the aluminum drum. The power supply to the first boat is kept constant at X to prevent other evaporated materials from collecting on this boat. without breaking the vacuum,
Increase the drum rotation speed to 30 rpm. Arsenic. The temperature of the second boat containing the tellurium-selenium alloy was gradually increased to 450°C over about 8.5 minutes and held at this temperature for 1 minute to deposit a thickness of about 0. .3 micron arsenic-tellurium-selenium alloy coating layer is formed.
The power supplied to the second boat was maintained at X, and the rotation speed of the drum was kept at 30 rpm. for about 7 minutes to form a 3.0 micron thick top layer of arsenic-selenium alloy on the middle layer of arsenic-tellurium-selenium alloy.

When this top layer is formed, the vacuum chamber is cooled to room temperature, the vacuum is broken, and the drum with the three-layer photoconductor is removed from the vacuum chamber. Example 2 The drum containing the three-layer photoconductor obtained in Example 1 above is then charged to a positive potential in the manner described in US Pat. No. 2,588,699.

The corona charging device is maintained at about 7500 volts to charge the drum to an acceptable potential of about 850-900 volts. The analog signal from the original image is fed into a helium-neon laser, which generates approximately 6328 angstroms of activating radiation and modulates the laser intensity with video information onto the drum. As a result, the drum is exposed to the image contour to form an electrostatic latent image on the drum. This method is described in US Pat. No. 3,870,816. The electrostatic latent image on the drum is then developed by cascading an electrostatic material onto the photoconductor surface of the drum. The developed image is then transferred to a copy sheet and heat fused onto the sheet. The final image obtained showed good resolution and high density and was an excellent copy of the original. Example 3 The drum obtained in Example 1 was installed in a Xerox Model X2OO Telecopier and a line drawing copy of a black original image was made on regular white printing paper.

The obtained line image also had good resolution and high density. Example 4 A drum made and charged as in Example 1 is exposed to a black-on-white line copying original image on conventional printing paper.

An electrostatic latent image is formed using a 15 watt General Electric Co. cool white fluorescent lamp black Fl5T8CW as the exposure light source.

The drum carrying this latent image is then developed by cascading an electroscopic material onto the photoconductor surface of the drum. Next, transfer the developed image to a copy sheet,
Heat and fix on the sheet. The final image obtained had good resolution, high density, and was an excellent copy of the original.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of one embodiment of the multilayer xerographic photoreceptor contemplated by the present invention, and FIGS. The initial and accelerated thermal aging sensitivity curves of a multilayer photoreceptor consisting of an intermediate layer (0.3 microns) and a bottom layer of halogen-doped arsenic-selenium alloy, with no arsenic in the intermediate layer. Figures 5, 6, 7, and 8 are diagrams showing sensitivity curves of a multilayer photoreceptor of the present invention in which arsenic is contained in a ternary alloy layer of an intermediate layer having various thicknesses. It is. 1: First layer, 2: Second layer, 3: Third layer, 4: Photoreceptor, 5
: Supporting member.

Claims (1)

[Claims] 1. (a) a first layer of vitreous selenium; and (b) vitreous arsenic coated on the first selenium layer.
a second layer consisting of a tellurium-selenium alloy; and (c) the arsenic layer described above.
A composite photoreceptor member comprising a third layer of vitreous arsenic-selenium alloy coated over a second layer of tellurium-selenium alloy. 2. The member of claim 1, wherein the first layer has a thickness of about 40.0 to 100.0 microns. 3. The member of claim 2, wherein the first layer has a thickness of about 52.0 to 68.0 microns. 4. The member of claim 3, wherein the first layer has a thickness of about 60 microns. 5. The member of claim 1, wherein the second layer has a thickness of about 0.1 to 1.0 microns. 6. The member of claim 5, wherein said second layer has a thickness of about 0.1 to 0.5 microns. 7. The member of claim 6, wherein the second layer has a thickness of 0.3 microns. 8. The member of claim 1, wherein said third layer has a thickness of about 0.1 to 5.0 microns. 9. The member of claim 8, wherein said third layer has a thickness of about 1.0 to 4.0 microns. 10. The member of claim 9, wherein said third layer has a thickness of about 3.0 microns. 11. The member of claim 1, wherein the first layer of vitreous selenium contains up to about 3.0% by weight arsenic. 12. The member of claim 1, wherein the first layer of vitreous selenium contains up to about 1.0% by weight arsenic. 13 The first layer of vitreous selenium is approximately 0.50% by weight.
A member according to claim 1 containing up to arsenic. 14. The member of claim 1, wherein the first layer of vitreous selenium includes a halogen dopant. 15. The component of claim 14, wherein said halogen dopant is selected from the group consisting of chlorine, iodine and bromine. 16 The above halogen dopant is about 5 ppm to 10,000
15. A component according to claim 14, wherein the component is present in a concentration of ppm. 17 The second layer of the arsenic-tellurium-selenium alloy has a thickness of about 0.
1 to about 40.0% by weight arsenic and about 1.0 to about 50.0% by weight arsenic.
A component according to claim 1 containing up to 0% by weight of tellurium. 18 The second layer of the arsenic-tellurium-selenium alloy is approximately 3.
0 to about 5.0% by weight arsenic and about 15.0 to about 25.0% by weight arsenic.
A component according to claim 1 containing 0% by weight of tellurium. 19 The second layer of the arsenic-tellurium-selenium alloy is about 4.
A component according to claim 1 containing 0% by weight arsenic and about 20.5% by weight tellurium. 20. The member according to claim 1, wherein the second layer of the arsenic-tellurium-selenium alloy contains a halogen dopant. 21 The third layer of the arsenic-selenium alloy is about 0.1 to about 4
A member according to claim 1 containing 0.0% by weight of arsenic. 22 The third layer of the arsenic-selenium alloy is about 0.1 to about 5
．． A component according to claim 1 containing 0% by weight of arsenic. 23 The third layer of the arsenic-selenium alloy is about 0.1 to about 3
．． A component according to claim 1 containing 0% by weight of arsenic. 24. The member according to claim 1, wherein the third layer of the arsenic-selenium alloy contains a halogen dopant.