US2863768A - Xerographic plate - Google Patents
Xerographic plate Download PDFInfo
- Publication number
- US2863768A US2863768A US520078A US52007855A US2863768A US 2863768 A US2863768 A US 2863768A US 520078 A US520078 A US 520078A US 52007855 A US52007855 A US 52007855A US 2863768 A US2863768 A US 2863768A
- Authority
- US
- United States
- Prior art keywords
- plate
- selenium
- xerographic
- light
- arsenic trisulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011669 selenium Substances 0.000 claims description 43
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 42
- 229910052711 selenium Inorganic materials 0.000 claims description 42
- 229940052288 arsenic trisulfide Drugs 0.000 claims description 34
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical class [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 10
- 229910001369 Brass Inorganic materials 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 239000010951 brass Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 229960005265 selenium sulfide Drugs 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- -1 dirt Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229920003086 cellulose ether Polymers 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004924 electrostatic deposition Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Definitions
- This invention relates in general to the art of electrophotography, now known as xerography, and, in particular, to a sensitive plate therefor. More specifically, the invention relates to a new xerographic or electrophotographic member comprising a conductive backing having on at least one surface thereof a photoconductive insulating coating consisting of a mixture of selenium and arsenic trisulfide, which member is known as a xerographic plate.
- a member or plate which comprises a conductive backing member such as, for example, a metallic surface having a photoconductive insulating surface thereon.
- a suitable plate for this purpose is a metallic member having a layer of vitreous selenium.
- Such a plate is characterized by being capable of receiving a satisfactory electrostatic charge and selectively dissipating such a charge when exposed to a light pattern.
- Such a plate while largely sensitive to light in the blue-green spectral range, also has appreciable sensitivity to light in the red spectral range.
- it is necessary to handle the plate in complete darkness to prevent unwanted dissipation of the charge.
- the loss of potential when stored in the dark (termed dark decay) for a negative charge is relatively rapid. For this reason, selenium plates are generally used only with positive charging.
- an improved xerographic plate can be prepared by incorporation in the photoconductive insulating coating of a minor amount of arsenic trisulfide.
- the plate as thus modified, while retaining high sensitivity in the blue-green spectral range, is characterized by an extremely low sensitivity in the red spectral range permitting the handling and developing of such a plate in red light. Furthermore, such plates have a satisfactory dark decay rate for negative charging, combined with high sensitivity to blue-green light.
- the permissible range of concentration or proportion of arsenic trisulfide in the selenium layer is relatively broad and may extend from about 0.5% to about 20% and preferably, lies in the range of about 1% to about by weight.
- the new and improved plates of the present invention can be prepared by a variety of methods.
- selenium and arsenic trisulfide in the desired proportions may be mixed and, in molten form, sprayed on the desired surface, or they may be evaporated onto the plate under high vacuum as from a mixture in a single evaporation source or optionally from two separate sources operating to volatilize their contents at the desired speed ratio.
- the mixed ingredients may be placed in a suit able film-forming binder and applied to the surface in the form of a selenium-arsenic trisulfide lacquer.
- a transparent insulating coating as of a vinyl resin, a cellulose ether or ester, a silicone resin, etc,
- the xerographic plate may be coated on top of the xerographic plate to protect the surface thereof from abrasion and mechanical damage.
- Fig. 1 is an oblique view, partially in section, of a xerographic plate according to one embodiment of the invention.
- Fig. 2 is a graph showing the relationship of plate potential to potential decay of a selenium plate as compared to a selenium-arsenic trisulfide plate.
- Fig. 3 is a graph showing the relationship of the rate of potential decay to plate potential for a seleniumarsenic trisulfide plate.
- Fig. 4 is a graph showing the spectral sensitivity of a selenium-arsenic trisulfide plate.
- the xerographic plate 10 consists of a conductive backing member 11 having thereon a coating 12 of selenium and arsenic trisulfide.
- a brass plate was polished with Glass Wax (a trade name of the Gold Seal Company, Bismarck, North Dakota, for a composition comprising about water, 15% naphtha, 7.5% abrasive, and the balance ammonia, emulsifier, and coloring agent), rinsed in isopropyl alcohol and then degreased in hot isopropyl alcohol vapor.
- the plate was then attached to a platen about four inches above a molybdenum boat. Six grams of selenium were placed in the boat and a bell jar placed over the apparatus. The system was then evacuated to a pressure of approximately 0.4 micron. Heat was applied to the plate to maintain the brass plate at a temperature of about C. and the selenium deposited on the brass plate while this base plate temperature was maintained.
- the platen was heated to maintain the brass plate at a temperature of about 80 C. during deposition.
- the thickness of the films on the selenium and seleniumarsenic trisulfide plates were measured.
- the selenium film was 50 microns thick and the selenium-arsenic trisulfide film was 48 microns thick.
- the plates were placed in the dark and charged negatively by corona emission. The amount of charge on the plate was then measured with an electrometer. The plates were kept in the dark for some time during which several measurements were made of the charge on the plate to determine the dark decay taking place.
- the corona unit actually imparted a relatively high charge to the plate, but the dark decay was so rapid that it had fallen off to volts before it could be measured.
- the selenium plate because of the rapid dark decay, exposure to light and measurement of the potential on the plate was carried out as soon as possible after charging.
- the selenium-arsenic trisulfide plate the plate was kept in the dark until the potential had fallen to 250 volts.
- the graph in Fig. 3 is derived directly from the graph in Fig. 2, except that a light intensity of 0.03 microwatt per square centimeter was used to determine the light decay for 700 millimicrons wavelength. Only the values for the SCA52S3 plate were plotted in Fig. 3. For the different potential values,
- the spectral sensitivity of the plates was also plotted, as set forth in the graph in Fig. 4.
- the standard method was adopted of using the reciprocal of the time for the potential to drop from 200 to 100 volts with a light intensity of 0.03 microwatt per square centimeter.
- a dark decay correction was applied to these computations.
- the formula used was W l i Where S equals sensitivity, t is the time in seconds for the potential drop of 200 to 100 volts and t is the time for the same drop when the plate is exposed to light. For very slow dark decay. the dark decay correction can be neglected.
- the selenium-arsenic trisulfide plate negatively charged is more sensitive at 600 millimicrons (yellow light) but less sensitive in the blue-green region than selenium that is positively charged. millimicrons (red light). The overall sensitivity of this plate to white light is estimated to be about one-half that of selenium positively charged.
- the selenium used in the preparation of xerographic plates should be free of impurities such as copper, iron, lead, and bismuth, which appear to adversely affect its ability to hold electrostatic charges, that is by forming conducting paths in the film or promoting the formation of conducting hexagonal selenium so that electrostatic charges leak off rapidly even in the dark and electrostatic deposition of powder or other finely-divided material cannot be obtained.
- impurities such as copper, iron, lead, and bismuth
- this grade of selenium is essentially pure, containing less than about twenty parts per million of impurities. If purified, other grades of selenium, i. e. D. D. Q. (double distilled in quartz) and C. C. R.” (commercial grade) as manufactured can likewise be employed in the process Its sensitivity falls to near 0 at 700 fit) disclosed herein. To purify these grades of selenium, they are first freed of copper, iron, lead, and bismuth by distillation. The selenium is next heated to about 250 C., slightly above its melting point, and, while molten, is then dropped through a shot tower (or in the laboratory by means of an eye dropper) into water to form pellets.
- a shot tower or in the laboratory by means of an eye dropper
- the pellets are subsequently treated with petroleum ether to remove water and allowed to air dry. If desired, the purified selenium can be remelted and cast in boats to form sticks. It can also be reduced in size by grinding or micropulverizing to facilitate melting and mixing with the arsenic trisulfide. Where the plates are prepared either by vacuum evaporation of the selenium and arsenic trisulfide or by spraying in molten form, it is desirable that the base plate be pro-heated to a temperature of at least about 75 C.
- a conductive base plate is usually required for xerographic plates and metal forms the most suitable material. However, a high conductivity is not required and almost any structurally satisfactory material which is more conductive than the selenium-arsenic trisulfide layer can be used. Materials having electrical resistivitics about 10 ohm-centimeter are generally satisfactory for the base plates of this invention although it is more desirable to use materials of less than about 10 ohm-centimeter. Any gross surface irregularities, i. e. burns, tool marks, are removed from the base plate by grinding or polishing, although it is unnecessary to polish the plate until it has a mirror-like surface.
- the plate surface is cleaned before coating with the selenium-arsenic trisulfide in order to remove grease, dirt, and other impurities which might prevent firm adherence of the coating to the base plate.
- This is readily accomplished by washing the plate with any suitable alkali cleaner or with a hydrocarbon solvent, such as benzene, followed by rinsing and drying.
- Suitable base plate materials are aluminum, glass having a conductive coating thereon as of tin oxide or aluminum, stainless steel, nickel, chromium, zinc, and steel, which do not react with the selenium or arsenic trisulfide to produce undesirable compounds such as oxides, nor promote the formation of hexagonal selenium and thereby adversely affect the electrophotographic qualities of the film.
- conductive plastic, conductively coated paper, or other web or film-like member may be used as the conductive supporting surface as desired.
- the backing member selected for this plate may be in the form of a flat plate or may equally be in the form of a cylinder, flexible sheet, or other member having a surface suitable for the xcrographic process.
- a xcrographic plate comprising an electrically conductive backing member having on at least one surface a layer of photoconductive insulating material consisting essentially of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium.
- a xerographic plate according to claim 1 in which the photoconductive insulating material has between about 1% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium.
- a xerographic plate according to claim 1 in which the photoconductive insulating material is between about 1% and about by weight of arsenic trisulfide and the remainder substantially vitreous selenium and the electrically conductive backing member is an aluminum surface.
- a xerographic plate according to claim 1 in which the photoconductive insulating layer is between about 1% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and the electrically conductive backing member is a brass surface.
- a process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
- a process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator comprising placing a positive electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
- a process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium, selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons and developing the resulting electrostatic image with positively charged powder particles.
- a process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 1.0% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
- a process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator comprising placing a positive electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 1.0% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
- a process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 1.0% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium, selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons and developing the resulting electrostatic image with positively charged powder particles.
- a process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator comprising placing a positive electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium, selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the said member to an X-ray image pattern and developing the resulting electrostatic image with electrically charged powder particles.
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
Dec. 9, 1958 Filed July 5, 1955 R. M. SCHAFFERT 2,863,768
XEROGRAPHIC PLATE 2 Sheets-Sheet 1 PLATE POTENTI A L VOLTS Fly. 1 1/ Se PLATE Se-As 5 PLATE 6) DARK O DARK A 400mg A 400m 12 700mg V 500mg 0 600mg El 700m/4 TIME SECONDS Ffg. Z
INVENTOR. ROLAND M. SCHAFFERT ATTORNEY Dec. 9, 1958 R. M. SCHAFFERT 2,863,768
XEROGRAPHIC PLATE 2 Sheets-Sheet 2 Filed July 5, 1955 LIGHT DA R K E T M 22 mmmmm 3 OOO EAwOOO sD4567 voAvon 5 00m Omv 00? 0mm OOM 0mm 00m 05 OO- PLATE POTENTIAL, VOLTS 3 w 5% ED 2A NE sH T6 AC S ,Y 0% a PC 5V n e em 3 SN U V WAVELENGTH, MILLIMICRONS INVENTOR. ROLAND M. SCHAFFERT attains EQQ latented Dec- 1958 xnnoonarnic PLATE Roland M. Schaifert, Columbus, Ohio, assignor, by mesne assignments, to l-laloirl Xerox Inn, Rochester, N. L, a corporation of New York Application .l uly 5, 1955, Serial No. 520,078
12 Claims. (Cl. 961) This invention relates in general to the art of electrophotography, now known as xerography, and, in particular, to a sensitive plate therefor. More specifically, the invention relates to a new xerographic or electrophotographic member comprising a conductive backing having on at least one surface thereof a photoconductive insulating coating consisting of a mixture of selenium and arsenic trisulfide, which member is known as a xerographic plate.
In the art of xero-graphy it is usual to form an electrostatic latent image on a member or plate which comprises a conductive backing member such as, for example, a metallic surface having a photoconductive insulating surface thereon. It has previously been found that a suitable plate for this purpose is a metallic member having a layer of vitreous selenium. Such a plate is characterized by being capable of receiving a satisfactory electrostatic charge and selectively dissipating such a charge when exposed to a light pattern.
Such a plate, while largely sensitive to light in the blue-green spectral range, also has appreciable sensitivity to light in the red spectral range. Thus, once the plate is sensitized as by applying an electrostatic charge thereto, it is necessary to handle the plate in complete darkness to prevent unwanted dissipation of the charge. Furthermore, the loss of potential when stored in the dark (termed dark decay) for a negative charge is relatively rapid. For this reason, selenium plates are generally used only with positive charging.
Now, in accordance with the present invention, it has been found that an improved xerographic plate can be prepared by incorporation in the photoconductive insulating coating of a minor amount of arsenic trisulfide. The plate, as thus modified, while retaining high sensitivity in the blue-green spectral range, is characterized by an extremely low sensitivity in the red spectral range permitting the handling and developing of such a plate in red light. Furthermore, such plates have a satisfactory dark decay rate for negative charging, combined with high sensitivity to blue-green light.
In general, the permissible range of concentration or proportion of arsenic trisulfide in the selenium layer is relatively broad and may extend from about 0.5% to about 20% and preferably, lies in the range of about 1% to about by weight.
The new and improved plates of the present invention can be prepared by a variety of methods. For example, selenium and arsenic trisulfide in the desired proportions may be mixed and, in molten form, sprayed on the desired surface, or they may be evaporated onto the plate under high vacuum as from a mixture in a single evaporation source or optionally from two separate sources operating to volatilize their contents at the desired speed ratio. Likewise, the mixed ingredients may be placed in a suit able film-forming binder and applied to the surface in the form of a selenium-arsenic trisulfide lacquer. If desired, a transparent insulating coating, as of a vinyl resin, a cellulose ether or ester, a silicone resin, etc,
may be coated on top of the xerographic plate to protect the surface thereof from abrasion and mechanical damage.
In the drawings,
Fig. 1 is an oblique view, partially in section, of a xerographic plate according to one embodiment of the invention.
Fig. 2 is a graph showing the relationship of plate potential to potential decay of a selenium plate as compared to a selenium-arsenic trisulfide plate.
Fig. 3 is a graph showing the relationship of the rate of potential decay to plate potential for a seleniumarsenic trisulfide plate.
Finally, Fig. 4 is a graph showing the spectral sensitivity of a selenium-arsenic trisulfide plate.
In Fig. 1 the xerographic plate 10 consists of a conductive backing member 11 having thereon a coating 12 of selenium and arsenic trisulfide.
The general scope and nature of the invention having been set forth, the following examples are given as typical illustrations of methods by which the desired plates may be prepared.
A brass plate was polished with Glass Wax (a trade name of the Gold Seal Company, Bismarck, North Dakota, for a composition comprising about water, 15% naphtha, 7.5% abrasive, and the balance ammonia, emulsifier, and coloring agent), rinsed in isopropyl alcohol and then degreased in hot isopropyl alcohol vapor. The plate was then attached to a platen about four inches above a molybdenum boat. Six grams of selenium were placed in the boat and a bell jar placed over the apparatus. The system was then evacuated to a pressure of approximately 0.4 micron. Heat was applied to the plate to maintain the brass plate at a temperature of about C. and the selenium deposited on the brass plate while this base plate temperature was maintained.
A mixture of 10 grams of selenium shot was melted in a porcelain crucible over a gas flame and 0.5 gram of arsenic trisulfide added, a little at a time with stirring, until completely dissolved. This produced a mixture consisting of 95.24% selenium and 4.76% arsenic trisulfide. The molten mixture was then poured onto a cold brass plate. When cool, the solidified mixture was broken into small fragments in a mortar. A brass plate was cleaned and attached to a platen as above described. Six grams of the selenium-arsenic trisulfide mixture were placed in a molybdenum boat. A bell jar then enclosed the system, which was evacuated to a pressure 0.4 micron. The platen was heated to maintain the brass plate at a temperature of about 80 C. during deposition. The thickness of the films on the selenium and seleniumarsenic trisulfide plates were measured. The selenium film was 50 microns thick and the selenium-arsenic trisulfide film was 48 microns thick.
The plates were placed in the dark and charged negatively by corona emission. The amount of charge on the plate was then measured with an electrometer. The plates were kept in the dark for some time during which several measurements were made of the charge on the plate to determine the dark decay taking place. In the case of the selenium plate, the corona unit actually imparted a relatively high charge to the plate, but the dark decay was so rapid that it had fallen off to volts before it could be measured. In the case of the selenium plate, because of the rapid dark decay, exposure to light and measurement of the potential on the plate was carried out as soon as possible after charging. In the case of the selenium-arsenic trisulfide plate, the plate was kept in the dark until the potential had fallen to 250 volts. At that point the light was turned on and measurements of potential continued over a period of time to determine the decrease of potential with ditierent wave lengths of .3 light. The light intensity for all wave lengths used on the selenium-arsenic trisulfide plate was 0.03 microwatt per square centimeter. For the selenium only plate, the same light intensity was used for 400 millimicrons wave length. In measuring the light decay for 700 millirnicrcns wave length, however, a light intensity of 2.34 microwatts per square centimeter was used. These data are plotted in the graph in Fig. 2. As can be seen, the light decay of the seleniunrarsenic trisulfide plate for red light (700 millimicrons) is only slightly faster than is the case for the dark decay rate.
The graph in Fig. 3 is derived directly from the graph in Fig. 2, except that a light intensity of 0.03 microwatt per square centimeter was used to determine the light decay for 700 millimicrons wavelength. Only the values for the SCA52S3 plate were plotted in Fig. 3. For the different potential values,
was determined by measuring the differences on each axis between adjacent points on the potential decay curves. These values of were then plotted against the plate potential to give the required curves. The curves show very clearly how the total current through the plate changes when, as the potential on the plate is decaying in the dark, the plate is exposed to light. The photo current is determined by the difference between the current when the light is on and the dark current. As can clearly be seen from these curves, the selenium-arsenic trisulfide plate possesses a high degree of light sensitivity for negative charging.
Using these same data, the spectral sensitivity of the plates was also plotted, as set forth in the graph in Fig. 4. For these computations the standard method was adopted of using the reciprocal of the time for the potential to drop from 200 to 100 volts with a light intensity of 0.03 microwatt per square centimeter. A dark decay correction was applied to these computations. The formula used was W l i Where S equals sensitivity, t is the time in seconds for the potential drop of 200 to 100 volts and t is the time for the same drop when the plate is exposed to light. For very slow dark decay. the dark decay correction can be neglected.
As can be seen in Fig. 4, compared with selenium the selenium-arsenic trisulfide plate negatively charged is more sensitive at 600 millimicrons (yellow light) but less sensitive in the blue-green region than selenium that is positively charged. millimicrons (red light). The overall sensitivity of this plate to white light is estimated to be about one-half that of selenium positively charged.
The selenium used in the preparation of xerographic plates should be free of impurities such as copper, iron, lead, and bismuth, which appear to adversely affect its ability to hold electrostatic charges, that is by forming conducting paths in the film or promoting the formation of conducting hexagonal selenium so that electrostatic charges leak off rapidly even in the dark and electrostatic deposition of powder or other finely-divided material cannot be obtained. Preferably, there should be used amorphous selenium available in pellet form ,4 inch to A; inch size under the name A. R. Q. (ammonia reduced in quartz from selenium oxide) as manufactured, for
this grade of selenium is essentially pure, containing less than about twenty parts per million of impurities. If purified, other grades of selenium, i. e. D. D. Q. (double distilled in quartz) and C. C. R." (commercial grade) as manufactured can likewise be employed in the process Its sensitivity falls to near 0 at 700 fit) disclosed herein. To purify these grades of selenium, they are first freed of copper, iron, lead, and bismuth by distillation. The selenium is next heated to about 250 C., slightly above its melting point, and, while molten, is then dropped through a shot tower (or in the laboratory by means of an eye dropper) into water to form pellets. The pellets are subsequently treated with petroleum ether to remove water and allowed to air dry. If desired, the purified selenium can be remelted and cast in boats to form sticks. It can also be reduced in size by grinding or micropulverizing to facilitate melting and mixing with the arsenic trisulfide. Where the plates are prepared either by vacuum evaporation of the selenium and arsenic trisulfide or by spraying in molten form, it is desirable that the base plate be pro-heated to a temperature of at least about 75 C.
A conductive base plate is usually required for xerographic plates and metal forms the most suitable material. However, a high conductivity is not required and almost any structurally satisfactory material which is more conductive than the selenium-arsenic trisulfide layer can be used. Materials having electrical resistivitics about 10 ohm-centimeter are generally satisfactory for the base plates of this invention although it is more desirable to use materials of less than about 10 ohm-centimeter. Any gross surface irregularities, i. e. burns, tool marks, are removed from the base plate by grinding or polishing, although it is unnecessary to polish the plate until it has a mirror-like surface. The plate surface is cleaned before coating with the selenium-arsenic trisulfide in order to remove grease, dirt, and other impurities which might prevent firm adherence of the coating to the base plate. This is readily accomplished by washing the plate with any suitable alkali cleaner or with a hydrocarbon solvent, such as benzene, followed by rinsing and drying. Suitable base plate materials are aluminum, glass having a conductive coating thereon as of tin oxide or aluminum, stainless steel, nickel, chromium, zinc, and steel, which do not react with the selenium or arsenic trisulfide to produce undesirable compounds such as oxides, nor promote the formation of hexagonal selenium and thereby adversely affect the electrophotographic qualities of the film.
Also, conductive plastic, conductively coated paper, or other web or film-like member may be used as the conductive supporting surface as desired. It is to be understood that the backing member selected for this plate may be in the form of a flat plate or may equally be in the form of a cylinder, flexible sheet, or other member having a surface suitable for the xcrographic process.
While the plate of this invention has been discussed chiefly in terms of its utility when negatively charged, novel and unusual advantages may be obtained by using a positive charge to sensitize the plate. Selenium-arsenic trisulfide plates apparently exhibit n-type conduction. When positively charged the plates have little sensitivity to visible light. However such plates have definite advantages for xeroradiography where insensitivity to visible light is desirable. As X-rays are absorbed throughout the film, electrons released deep within the film would move toward a positively charged surface. Thus the platespositively charged would be light insensitive, X-ray sensltive.
I claim:
1. As an article of manufacture a xcrographic plate comprising an electrically conductive backing member having on at least one surface a layer of photoconductive insulating material consisting essentially of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium.
2. A xerographic plate according to claim 1 in which the photoconductive insulating material has between about 1% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium.
3. A xerographic plate according to claim 1 in which the electrically conductive backing member is a metal surface.
4. A xerographic plate according to claim 1 in which the photoconductive insulating material is between about 1% and about by weight of arsenic trisulfide and the remainder substantially vitreous selenium and the electrically conductive backing member is an aluminum surface.
5. A xerographic plate according to claim 1 in which the photoconductive insulating layer is between about 1% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and the electrically conductive backing member is a brass surface.
6. A process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator, the steps comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
7. A process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator, the steps comprising placing a positive electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
8. A process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator, the steps comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium, selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons and developing the resulting electrostatic image with positively charged powder particles.
9. A process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator, the steps comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 1.0% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
10. A process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator, the steps comprising placing a positive electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 1.0% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium and selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons.
11. A process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator, the steps comprising placing a negative electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 1.0% and about 10% by weight of arsenic trisulfide and the remainder substantially vitreous selenium, selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the charged surface to an image pattern of light having a wave length of less than about 650 millimicrons and developing the resulting electrostatic image with positively charged powder particles.
12. A process of producing a xerographic reproduction wherein an electrostatic image is formed on a photoconductive insulator, the steps comprising placing a positive electrostatic charge on the photoconductive insulating surface of a xerographic member comprising an electrically conductive backing member having thereon a photoconductive insulating layer of a substantially uniform mixture of between about 0.5% and about 20% by weight of arsenic trisulfide and the remainder substantially vitreous selenium, selectively dissipating electrostatic charge from the photoconductive insulating surface of said xerographic member by exposing the said member to an X-ray image pattern and developing the resulting electrostatic image with electrically charged powder particles.
References Cited in the file of this patent UNITED STATES PATENTS 2,199,104 Johnson et a1 Apr. 30, 1940 2,297,691 Carlson Oct. 6, 1942 2,575,392 Peters et a1 Nov. 20, 1951 2,657,152 Mengali et al Oct. 27, 1953 2,662,832 Middleton et a1. Dec. 15, 1953 2,692,178 Grandadam Oct. 19, 1954 FOREIGN PATENTS 284,942 Great Britain Feb. 9, 1928 358,672 Great Britain Oct. 15, 1931 OTHER REFERENCES Mellor: Treatise on Inorganic and Theoretical Chemistry, 1929; vol. 9; page 274.
Claims (1)
1. AS AN ARTICLE OF MANUFACTURE A XEROGRAPHIC PLATE COMPRISING AN ELECTRICALLY CONDUCTIVE BACKING MEMBER HAVING ON AT LEAST ONE SURFACE A LAYER OF PHOTOCONDUCTIVE INSULATING MATERIAL CONSISTING ESSENTIALLY OF A SUBSTANTIALLY UNIFORM MIXTURE OF BETWEEN ABOUT 0.5% AND ABOUT 20% BY WEIGHT OF ARSENIC TRISULFIDE AND THE REMAINDER SUBSTANTIALLY VITREOUS SELENIUM.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US520078A US2863768A (en) | 1955-07-05 | 1955-07-05 | Xerographic plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US520078A US2863768A (en) | 1955-07-05 | 1955-07-05 | Xerographic plate |
Publications (1)
Publication Number | Publication Date |
---|---|
US2863768A true US2863768A (en) | 1958-12-09 |
Family
ID=24071109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US520078A Expired - Lifetime US2863768A (en) | 1955-07-05 | 1955-07-05 | Xerographic plate |
Country Status (1)
Country | Link |
---|---|
US (1) | US2863768A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3151982A (en) * | 1962-04-02 | 1964-10-06 | Xerox Corp | Xerographic plate |
US3170790A (en) * | 1959-01-08 | 1965-02-23 | Xerox Corp | Red sensitive xerographic plate and process therefor |
US3393070A (en) * | 1965-03-01 | 1968-07-16 | Xerox Corp | Xerographic plate with electric field regulating layer |
US3477846A (en) * | 1967-05-01 | 1969-11-11 | Gaf Corp | Xerographic charge transfer process |
US3511649A (en) * | 1966-05-02 | 1970-05-12 | Xerox Corp | Process of reducing fatigue in photoconductive glasses |
FR2128879A1 (en) * | 1971-03-12 | 1972-10-20 | Boliden Ab | |
US3861913A (en) * | 1972-03-31 | 1975-01-21 | Ibm | Electrophotographic charge generation layer |
US3906228A (en) * | 1972-10-16 | 1975-09-16 | Siemens Ag | X-ray photographic process |
US4481273A (en) * | 1982-05-27 | 1984-11-06 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and preparation thereof |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB284942A (en) * | 1927-08-06 | 1928-02-09 | John Neale | Improvements in selenium cells |
GB358672A (en) * | 1930-09-03 | 1931-10-15 | Frederick Hurn Constable | Improvements relating to the control of the characteristics of light-sensitive materials |
US2199104A (en) * | 1936-02-27 | 1940-04-30 | Gen Electric Co Ltd | Manufacture of selenium surfaces |
US2297691A (en) * | 1939-04-04 | 1942-10-06 | Chester F Carlson | Electrophotography |
US2575392A (en) * | 1947-12-11 | 1951-11-20 | Vickers Inc | Method of annealing a selenium coating |
US2657152A (en) * | 1950-03-31 | 1953-10-27 | Haloid Co | Process of producing an electrophotographic plate |
US2662832A (en) * | 1950-04-08 | 1953-12-15 | Haloid Co | Process of producing an electrophotographic plate |
US2692178A (en) * | 1948-04-30 | 1954-10-19 | Onera (Off Nat Aerospatiale) | Method and material for graphical registering or direct recording |
-
1955
- 1955-07-05 US US520078A patent/US2863768A/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB284942A (en) * | 1927-08-06 | 1928-02-09 | John Neale | Improvements in selenium cells |
GB358672A (en) * | 1930-09-03 | 1931-10-15 | Frederick Hurn Constable | Improvements relating to the control of the characteristics of light-sensitive materials |
US2199104A (en) * | 1936-02-27 | 1940-04-30 | Gen Electric Co Ltd | Manufacture of selenium surfaces |
US2297691A (en) * | 1939-04-04 | 1942-10-06 | Chester F Carlson | Electrophotography |
US2575392A (en) * | 1947-12-11 | 1951-11-20 | Vickers Inc | Method of annealing a selenium coating |
US2692178A (en) * | 1948-04-30 | 1954-10-19 | Onera (Off Nat Aerospatiale) | Method and material for graphical registering or direct recording |
US2657152A (en) * | 1950-03-31 | 1953-10-27 | Haloid Co | Process of producing an electrophotographic plate |
US2662832A (en) * | 1950-04-08 | 1953-12-15 | Haloid Co | Process of producing an electrophotographic plate |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3170790A (en) * | 1959-01-08 | 1965-02-23 | Xerox Corp | Red sensitive xerographic plate and process therefor |
US3151982A (en) * | 1962-04-02 | 1964-10-06 | Xerox Corp | Xerographic plate |
US3393070A (en) * | 1965-03-01 | 1968-07-16 | Xerox Corp | Xerographic plate with electric field regulating layer |
US3511649A (en) * | 1966-05-02 | 1970-05-12 | Xerox Corp | Process of reducing fatigue in photoconductive glasses |
US3477846A (en) * | 1967-05-01 | 1969-11-11 | Gaf Corp | Xerographic charge transfer process |
FR2128879A1 (en) * | 1971-03-12 | 1972-10-20 | Boliden Ab | |
US3861913A (en) * | 1972-03-31 | 1975-01-21 | Ibm | Electrophotographic charge generation layer |
US3906228A (en) * | 1972-10-16 | 1975-09-16 | Siemens Ag | X-ray photographic process |
US4481273A (en) * | 1982-05-27 | 1984-11-06 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and preparation thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2803542A (en) | Xerographic plate | |
US2803541A (en) | Xerographic plate | |
US3355289A (en) | Cyclical xerographic process utilizing a selenium-tellurium xerographic plate | |
US2886434A (en) | Protected photoconductive element and method of making same | |
US2901349A (en) | Xerographic plate | |
US3467548A (en) | Method of making xerographic plate by vacuum evaporation of selenium alloy | |
US2937944A (en) | Xerographic light-sensitive member and process therefor | |
US2863768A (en) | Xerographic plate | |
US2954291A (en) | Method for preparing a spirit duplicating master | |
US3438773A (en) | Flexible transparent electrophotographic film and method of development of said film | |
US3008825A (en) | Xerographic light-sensitive member and process therefor | |
US3685989A (en) | Ambipolar photoreceptor and method of imaging | |
US4609605A (en) | Multi-layered imaging member comprising selenium and tellurium | |
JPS5913021B2 (en) | Composite photoreceptor material | |
US3524745A (en) | Photoconductive alloy of arsenic,antimony and selenium | |
US2745327A (en) | Electrophotographic process | |
US3903107A (en) | Direct alpha to X phase conversion of metal containing phthalocyanine | |
US3615413A (en) | Indium doping of selenium-arsenic photoconductive alloys | |
US3712810A (en) | Ambipolar photoreceptor and method | |
US3077386A (en) | Process for treating selenium | |
JPS614066A (en) | Xerographic image conversion method and member using interface layer | |
US3498835A (en) | Method for making xerographic plates | |
US3966470A (en) | Photo-conductive coating containing Ge, S, and Pb or Sn | |
US3932180A (en) | Direct alpha to X phase conversion of metal-free phthalocyanine | |
US3709683A (en) | Infrared sensitive image retention photoreceptor |