US2917684A - Semi-conductive electrode system - Google Patents

Semi-conductive electrode system Download PDF

Info

Publication number
US2917684A
US2917684A US608067A US60806756A US2917684A US 2917684 A US2917684 A US 2917684A US 608067 A US608067 A US 608067A US 60806756 A US60806756 A US 60806756A US 2917684 A US2917684 A US 2917684A
Authority
US
United States
Prior art keywords
semi
electrode
conductive
chromium
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US608067A
Other languages
English (en)
Inventor
Becherer Hans Karl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
North American Philips Co Inc
Original Assignee
US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US2917684A publication Critical patent/US2917684A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01067—Holmium [Ho]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Definitions

  • This invention relates to semi-conductive electrode systems or devices comprising a semi-conductive body, one or more electrodes, and current-supply wires or leads connected to the electrodes.
  • the semiconductive body of which may consist, for example, of germanium or silicon
  • an etching treatment after the electrodes and the current-supply wires have been provided. Since the conventional etching agents chemically attack not only the surface of the semi-conductive body, but also the supply wires, the risk is involved that the elements thus dissolving may contaminate the semi-conductive surface and this results in a material decline in the electrical properties of such a system.
  • the invention is based on the discovery that, although chromium and nickel, separately, are chemically attacked by the conventional etching agents, there are a plurality of alloys of such metals which are not attacked thereby.
  • At least one current-supply wire consists of a chromium-nickel alloy containing at least so large a percentage of each of said elements that chemical attack in the conventional etching agents does not occur.
  • the alloy preferably contains at least 5% of each of said metals.
  • An alloy which may satisfactorily be used contains 20% of chromium and 80% of nickel. (The percentages mentioned are percentages by weight.)
  • the diode comprises a germanium monocrystal 1 of area of 3 x 3 mms.
  • compositions of a few conventional baths for etching semi-conductive electrode systems are:
  • a conductive lead connected to the electrode and of which the portion thereof adjacent the body is constituted of a chromium-nickel alloy containing sufficient chromium and nickel to resist chemical attack during the etching treatment.
  • a conductive lead connected to and contacting the electrode and consisting of a chromium-nickel alloy containing at least 5% of chromium and at least 5% of nickel.
  • a device as set forth in claim 2 wherein the alloy consists of about 20% of chromium and about 80% of nickel.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Contacts (AREA)
  • ing And Chemical Polishing (AREA)
US608067A 1955-09-29 1956-09-05 Semi-conductive electrode system Expired - Lifetime US2917684A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL842366X 1955-09-29

Publications (1)

Publication Number Publication Date
US2917684A true US2917684A (en) 1959-12-15

Family

ID=19845047

Family Applications (1)

Application Number Title Priority Date Filing Date
US608067A Expired - Lifetime US2917684A (en) 1955-09-29 1956-09-05 Semi-conductive electrode system

Country Status (5)

Country Link
US (1) US2917684A (en))
BE (1) BE551335A (en))
DE (1) DE1047317B (en))
FR (1) FR1157675A (en))
GB (1) GB842366A (en))

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2982894A (en) * 1960-01-12 1961-05-02 Jr Thomas C Tweedie Coaxial microwave diode and method of making the same
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
US3103733A (en) * 1958-08-19 1963-09-17 Clevite Corp Treatment of germanium semiconductor devices
US3140527A (en) * 1958-12-09 1964-07-14 Valdman Henri Manufacture of semiconductor elements
US3147779A (en) * 1960-09-16 1964-09-08 Gen Electric Cutting and forming transistor leads
US3159775A (en) * 1960-11-30 1964-12-01 Sylvania Electric Prod Semiconductor device and method of manufacture
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US3188535A (en) * 1959-08-27 1965-06-08 Philips Corp Semi-conductor electrode system having at least one aluminium-containing electrode
US3195217A (en) * 1959-08-14 1965-07-20 Westinghouse Electric Corp Applying layers of materials to semiconductor bodies

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB928110A (en) * 1960-01-06 1963-06-06 Pacific Semiconductors Inc Semiconductor devices and methods for assembling them
DE1123406B (de) * 1960-09-27 1962-02-08 Telefunken Patent Verfahren zur Herstellung von legierten Halbleiteranordnungen
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2541832A (en) * 1949-07-22 1951-02-13 Gen Electric Electric current rectifier
US2542727A (en) * 1949-12-29 1951-02-20 Bell Telephone Labor Inc Etching processes and solutions
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2485069A (en) * 1944-07-20 1949-10-18 Bell Telephone Labor Inc Translating material of silicon base
GB635690A (en) * 1946-07-31 1950-04-12 Gen Electric Co Ltd Improvements in and relating to crystal rectifiers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device
US2541832A (en) * 1949-07-22 1951-02-13 Gen Electric Electric current rectifier
US2542727A (en) * 1949-12-29 1951-02-20 Bell Telephone Labor Inc Etching processes and solutions

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103733A (en) * 1958-08-19 1963-09-17 Clevite Corp Treatment of germanium semiconductor devices
US3140527A (en) * 1958-12-09 1964-07-14 Valdman Henri Manufacture of semiconductor elements
US3195217A (en) * 1959-08-14 1965-07-20 Westinghouse Electric Corp Applying layers of materials to semiconductor bodies
US3188535A (en) * 1959-08-27 1965-06-08 Philips Corp Semi-conductor electrode system having at least one aluminium-containing electrode
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US2982894A (en) * 1960-01-12 1961-05-02 Jr Thomas C Tweedie Coaxial microwave diode and method of making the same
US3147779A (en) * 1960-09-16 1964-09-08 Gen Electric Cutting and forming transistor leads
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
US3159775A (en) * 1960-11-30 1964-12-01 Sylvania Electric Prod Semiconductor device and method of manufacture

Also Published As

Publication number Publication date
DE1047317B (de) 1958-12-24
BE551335A (en))
FR1157675A (fr) 1958-06-02
GB842366A (en) 1960-07-27

Similar Documents

Publication Publication Date Title
US2917684A (en) Semi-conductive electrode system
US2971251A (en) Semi-conductive device
US2842831A (en) Manufacture of semiconductor devices
US2736847A (en) Fused-junction silicon diodes
US2603692A (en) Rectifier and method of making it
US2805968A (en) Semiconductor devices and method of making same
US3200490A (en) Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
US2825667A (en) Methods of making surface alloyed semiconductor devices
US2447829A (en) Germanium-helium alloys and rectifiers made therefrom
US3609470A (en) Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
US2945285A (en) Bonding of semiconductor contact electrodes
GB878544A (en) Improvements in or relating to processes of manufacturing semi-conductor devices
US3121829A (en) Silicon carbide semiconductor device
US2925643A (en) Method of manufacturing electrode systems
US2877396A (en) Semi-conductor devices
US2629767A (en) Semiconductor amplifier or oscillator device
US2918719A (en) Semi-conductor devices and methods of making them
US2246328A (en) Asymmetrical conductor and method of making the same
US2867899A (en) Method of soldering germanium diodes
US2723370A (en) Electrically semiconductive crystalline body
US2935453A (en) Manufacture of semiconductive translating devices
US2696574A (en) Transistor unit
US2690383A (en) Etching of crystal contact devices
US3082136A (en) Semiconductor devices and method of manufacturing them
US3158471A (en) Gold alloy solder for semiconductor devices