US2162362A - Asymmetrical conductor - Google Patents

Asymmetrical conductor Download PDF

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Publication number
US2162362A
US2162362A US234377A US23437738A US2162362A US 2162362 A US2162362 A US 2162362A US 234377 A US234377 A US 234377A US 23437738 A US23437738 A US 23437738A US 2162362 A US2162362 A US 2162362A
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United States
Prior art keywords
oxide
copper
per cent
thallium
layer
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Expired - Lifetime
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US234377A
Inventor
George O Smith
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AT&T Corp
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Bell Telephone Laboratories Inc
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Filing date
Publication date
Priority to BE475711D priority Critical patent/BE475711A/xx
Priority to NL65452D priority patent/NL65452C/xx
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US234377A priority patent/US2162362A/en
Application granted granted Critical
Publication of US2162362A publication Critical patent/US2162362A/en
Priority to GB19265/47A priority patent/GB631041A/en
Priority to FR949907D priority patent/FR949907A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Definitions

  • This invention relates to electrical current conducting devices that oiTer a greater resistance to ilow-oi current in one direction than in the opposite direction and more particularly to such devices of the copper cuprous oxide type.
  • An object of this invention is to improve the current-voltage characteristics of copper-cuprous oxide rectifiers by increasing the resistance in both the high and low current directions, the increase in the high current direction being for voltages up to about 1 -volt.
  • a feature of this invention comprises making coppcr-cuprous oxide type of conduction devices from commercial copper having a high degree of 7 purity to which has been added a small amount of other material, more particularly, lead oxide, thallium oxide or thallium.
  • Fig. 1 is a cross-sectional view of a copper-cuprous oxide rectifier in accordance with this invention.
  • Fig. 2 is a top plan view of the device of Fig. 1.
  • Such copper may have traces oi metallic impurities totalling about 0.04 per cent.
  • aclded to such copper when in the molten state, a small amount of lead oxide, thallium oxide or thallium.
  • the resulting material is formed into sheets of suitable thickness and blanks or washers formed therefrom.
  • the blanks may then be treated by various methods to produce metalmetal oxide rectifier units.
  • One such process comprises placing a blank I in a furnace having an, oxidizing atmosphere at about l000 centigrade for about ten minutes, then placing it in a second furnace maintained at about 500 centigrade for about three minutes and then quenching in cold water.
  • outside layer 2 which has been formed on the blank is then suitably treated to provide a low ohmic electrical contact surface thereon.
  • An asymmetrical conducting device comprising a metallic body. having an integral layer of an oxide of said body thereon, said body comprising copper to which has been added one of the materials of the group comprising lead oxide, thallium oxide and thallium.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead oxide.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium oxide.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead monoxide.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallous oxide.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of one of the materials from the group comprising lead oxide, thallium oxide and thallium, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • an asymmetrical conducting device comprising a body substantially oi? copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of lead oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallium oxide, forming a body from the resulting melt and heat treating said body to form the oxide 5 layer thereon.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a m small amount, up to 0.55 per cent, of thallium,
  • an asymmetrical conducting device comprising a body substantial- 1y of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, 01' lead monoxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallous oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.

Description

June 13, 1939. O SM|TH 2,162,362
ASYMMETRICAL CONDUCTOR Filed Oct. ll, 1938 COPPER TO WHICH HAS BEEN ADDED LEAD OXIDE} T/ML L/UM OXIDE, 0R THALLIUM.
FIG. 2
QOSM/Tf/ 04% 6. ATTORNEY ii-"tatented June 13, 1939 D STAT ES PATENT OFFICE ASYMMETRICAL CONDUCTOR Application October 11, 1938, Serial No. 234,377
12 Claims.
This invention relates to electrical current conducting devices that oiTer a greater resistance to ilow-oi current in one direction than in the opposite direction and more particularly to such devices of the copper cuprous oxide type.
An object of this invention is to improve the current-voltage characteristics of copper-cuprous oxide rectifiers by increasing the resistance in both the high and low current directions, the increase in the high current direction being for voltages up to about 1 -volt.
A feature of this invention comprises making coppcr-cuprous oxide type of conduction devices from commercial copper having a high degree of 7 purity to which has been added a small amount of other material, more particularly, lead oxide, thallium oxide or thallium.
()thcr and further objects and features will be apparent from the following detailed description taken in conjunction with the drawing in which:
Fig. 1 is a cross-sectional view of a copper-cuprous oxide rectifier in accordance with this invention; and
Fig. 2 is a top plan view of the device of Fig. 1.
In the manufacture of copper-cuprous oxide rectifiers and the like, it is considered good practice to employ commercial copper having a high degree of purity. Such copper may have traces oi metallic impurities totalling about 0.04 per cent.
in accordance with this invention, there is aclded to such copper. when in the molten state, a small amount of lead oxide, thallium oxide or thallium. The resulting material is formed into sheets of suitable thickness and blanks or washers formed therefrom. The blanks may then be treated by various methods to produce metalmetal oxide rectifier units. One such process comprises placing a blank I in a furnace having an, oxidizing atmosphere at about l000 centigrade for about ten minutes, then placing it in a second furnace maintained at about 500 centigrade for about three minutes and then quenching in cold water.
outside layer 2 which has been formed on the blank is then suitably treated to provide a low ohmic electrical contact surface thereon.
It has been found that asymmetrical conductors made from copper to which has been added up to about 0.55 per cent by weight of lead oxide, thallium oxide or thallium, have better characteristics than those made from commercial copper. Such addition results in an increase in resistance in both the high and low current directions, the increase in the high current direction being for voltages below about 1 volt. Rectifiers having the above-noted characteristics have been made from copper melts to which have been added the following percentages of the indicated material:
Lead oxide 0.055 per cent, 0.108 per cent or 0.537 per cent; thallium oxide 0.056 per cent or 0.336 per cent; thallium 0.2 per cent, 0.3 per cent or 0.5 per cent.
It will be understood that this invention has been disclosed with reference to particular illustrative forms thereof, and it is to be considered as limited in scope by the appended claims only.
What is claimed is:
1. An asymmetrical conducting device comprising a metallic body. having an integral layer of an oxide of said body thereon, said body comprising copper to which has been added one of the materials of the group comprising lead oxide, thallium oxide and thallium.
2. A copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead oxide.
3. A copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium oxide.
4. A copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium.
5. A copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead monoxide.
6. A copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallous oxide.
'7. The method of making an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of one of the materials from the group comprising lead oxide, thallium oxide and thallium, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
8. The method of making an asymmetrical conducting device comprising a body substantially oi? copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of lead oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
9. The method of making an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallium oxide, forming a body from the resulting melt and heat treating said body to form the oxide 5 layer thereon.
10. The method of making an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a m small amount, up to 0.55 per cent, of thallium,
forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
ii. The method of making an asymmetrical conducting device comprising a body substantial- 1y of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, 01' lead monoxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
12. The method of making an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallous oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
GEORGE 0. SMITH.
US234377A 1938-10-11 1938-10-11 Asymmetrical conductor Expired - Lifetime US2162362A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BE475711D BE475711A (en) 1938-10-11
NL65452D NL65452C (en) 1938-10-11
US234377A US2162362A (en) 1938-10-11 1938-10-11 Asymmetrical conductor
GB19265/47A GB631041A (en) 1938-10-11 1947-07-18 Improvements in asymmetrical electrical conducting devices
FR949907D FR949907A (en) 1938-10-11 1947-07-22 Unsymmetrical conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US234377A US2162362A (en) 1938-10-11 1938-10-11 Asymmetrical conductor

Publications (1)

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US2162362A true US2162362A (en) 1939-06-13

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BE (1) BE475711A (en)
FR (1) FR949907A (en)
GB (1) GB631041A (en)
NL (1) NL65452C (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
US2692212A (en) * 1950-02-09 1954-10-19 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2842470A (en) * 1953-02-03 1958-07-08 Degussa Process for increasing the scaling resistance of titanium base metals
US2942158A (en) * 1955-11-01 1960-06-21 Westinghouse Air Brake Co Copper alloys for asymmetrical conductors and copper oxide cells made therefrom
DE976691C (en) * 1949-08-26 1964-02-27 Int Standard Electric Corp Process for the manufacture of dry rectifiers
US3246979A (en) * 1961-11-10 1966-04-19 Gen Electric Vacuum circuit interrupter contacts

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
DE976691C (en) * 1949-08-26 1964-02-27 Int Standard Electric Corp Process for the manufacture of dry rectifiers
US2692212A (en) * 1950-02-09 1954-10-19 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2842470A (en) * 1953-02-03 1958-07-08 Degussa Process for increasing the scaling resistance of titanium base metals
US2942158A (en) * 1955-11-01 1960-06-21 Westinghouse Air Brake Co Copper alloys for asymmetrical conductors and copper oxide cells made therefrom
US3246979A (en) * 1961-11-10 1966-04-19 Gen Electric Vacuum circuit interrupter contacts

Also Published As

Publication number Publication date
GB631041A (en) 1949-10-26
BE475711A (en)
FR949907A (en) 1949-09-13
NL65452C (en)

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