US20260005157A1 - Electronic device - Google Patents

Electronic device

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Publication number
US20260005157A1
US20260005157A1 US19/319,981 US202519319981A US2026005157A1 US 20260005157 A1 US20260005157 A1 US 20260005157A1 US 202519319981 A US202519319981 A US 202519319981A US 2026005157 A1 US2026005157 A1 US 2026005157A1
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US
United States
Prior art keywords
conductor
electronic device
electronic component
thickness direction
columnar conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US19/319,981
Other languages
English (en)
Inventor
Hiroki Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of US20260005157A1 publication Critical patent/US20260005157A1/en
Pending legal-status Critical Current

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    • H01L23/552—
    • H01L23/5384—
    • H01L24/16—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H01L2224/16227—
    • H01L2224/16238—
    • H01L25/0655—
    • H01L25/16—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present disclosure relates to an electronic device.
  • an electronic device comprising a plurality of electronic components.
  • One example of such an electronic device is disclosed in JP-A-2021-34600, for example.
  • the electronic device (semiconductor device) disclosed in the document includes a semiconductor element, a plurality of electronic components, an insulating layer and a sealing resin.
  • the semiconductor element is an LSI.
  • Each of the electronic components is either a diode or a passive element such as a resistor, capacitor or inductor.
  • the insulating layer supports the semiconductor element and the electronic components.
  • the sealing resin is formed on the insulating layer. The sealing resin covers the semiconductor element and the electronic components.
  • FIG. 1 is a plan view of an electronic device according to a first embodiment.
  • FIG. 2 is a plan view of FIG. 1 , in which the sealing resin is indicated by imaginary lines.
  • FIG. 3 is a plan view of FIG. 2 , in which the sealing resin and the columnar conductor are omitted and the first electronic component and the second electronic component are indicated by imaginary lines.
  • FIG. 4 is a front view of the electronic device according to the first embodiment.
  • FIG. 5 is a bottom view of the electronic device according to the first embodiment.
  • FIG. 6 is a left-side view of the electronic device according to the first embodiment.
  • FIG. 7 is a cross-sectional view taken along line VII-VII of FIG. 2 .
  • FIG. 8 is a partially enlarged view of FIG. 2 .
  • FIG. 9 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 10 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 11 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 12 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 13 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 14 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 15 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 16 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 17 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 18 is a cross-sectional view corresponding to FIG. 7 , illustrating a step of a method of manufacturing the electronic device according to the first embodiment.
  • FIG. 19 is an enlarged plan view illustrating a relevant part of an electronic device according to a first variation of the first embodiment.
  • FIG. 20 is an enlarged plan view illustrating a relevant part of an electronic device according to a second variation of the first embodiment.
  • FIG. 21 is a bottom view of an electronic device according to a third variation of the first embodiment.
  • FIG. 22 is a cross-sectional view taken along line XXII-XXII of FIG. 21 .
  • FIG. 23 is a plan view of an electronic device according to a second embodiment, in which the sealing resin is indicated by imaginary lines.
  • FIG. 24 is a plan view of an electronic device according to a variation of the second embodiment, in which the sealing resin is indicated by imaginary lines.
  • FIG. 25 is a plan view of an electronic device according to a third embodiment, in which the sealing resin is indicated by imaginary lines.
  • FIG. 26 is a cross-sectional view taken along line XXVI-XXVI of FIG. 25 .
  • FIG. 27 is a plan view of an electronic device according to a variation of the third embodiment, in which the sealing resin is indicated by imaginary lines.
  • FIG. 28 is a plan view of an electronic device according to another embodiment, in which the sealing resin is indicated by imaginary lines.
  • FIG. 29 is a cross-sectional view taken along line XXIX-XXIX of FIG. 28 .
  • the expression “An object A is formed in an object B”, and “An object A is formed on an object B” imply the situation where, unless otherwise specifically noted, “the object A is formed directly in or on the object B”, and “the object A is formed in or on the object B, with something else interposed between the object A and the object B”.
  • the expression “An object A is disposed in an object B”, and “An object A is disposed on an object B” imply the situation where, unless otherwise specifically noted, “the object A is disposed directly in or on the object B”, and “the object A is disposed in or on the object B, with something else interposed between the object A and the object B”.
  • the expression “An object A is located on an object B” implies the situation where, unless otherwise specifically noted, “the object A is located on the object B, in contact with the object B”, and “the object A is located on the object B, with something else interposed between the object A and the object B”. Still further, the expression “An object A overlaps with an object B as viewed in a certain direction” implies the situation where, unless otherwise specifically noted, “the object A overlaps with the entirety of the object B”, and “the object A overlaps with a part of the object B”.
  • the expression “An object A (or the material thereof) contains a material C” includes “the object A (or the material thereof) is made of a material C” and “the object A (or the material thereof) is mainly composed of a material C”.
  • the expression “A surface A faces (one side or another side in) a direction B” implies the situation where, unless otherwise specifically noted, the surface A is oriented at 90 degrees with respect to the direction B, and the surface A is inclined with respect to the direction B.
  • FIGS. 1 to 8 show an electronic device A 10 according to a first embodiment.
  • the electronic device A 10 includes a first electronic component 1 A, a second electronic component 1 B, a support member 2 , a plurality of bonding portions 31 and 32 , a wiring layer 4 , a through conductor 51 , a terminal 52 , a sealing resin 6 , and a columnar conductor 7 .
  • the electronic device A 10 is surface-mounted on a wiring board of an electronic apparatus or an electric vehicle.
  • the electronic device A 10 is in a form of a leadless package type, and in particular, a QFN (Quad Flat Non-leaded) package type.
  • the electronic device A 10 has a rectangular shape in plan view.
  • the thickness direction z is one example of a thickness direction of the electronic device A 10 .
  • one side in the thickness direction z may be referred to as upper, and the other side as lower.
  • the terms such as “upward”, “downward”, “upper”, “lower”, “upper surface” and “lower surface” indicate the relative positional relationship of each component in the thickness direction z, and do not necessarily define the relationship with respect to the direction of gravity.
  • the term “plan view” means as viewed in the thickness direction z.
  • the first electronic component 1 A and the second electronic component 1 B each play a functionally central role of the electronic device A 10 .
  • Each of the first electronic component 1 A and the second electronic component 1 B may be an integrated circuit such as an LSI.
  • each of the first electronic component 1 A and the second electronic component 1 B may be a voltage control element such as an LDO (Low Drop Out) regulator, an amplification element such as an operational amplifier, or a discrete element such as a transistor or diode.
  • Each of the first electronic component 1 A and the second electronic component 1 B has a rectangular shape in plan view.
  • Each of the first electronic component 1 A and the second electronic component 1 B is supported by the support member 2 .
  • Each of the first electronic component 1 A and the second electronic component 1 B overlaps with the support member 2 in plan view.
  • each of the first electronic component 1 A and the second electronic component 1 B includes an element top surface 10 a and an opposing surface 10 b .
  • the element top surface 10 a and the opposing surface 10 b are spaced apart from each other in the thickness direction z.
  • the element top surface 10 a and the opposing surface 10 b face away from each other.
  • the element top surface 10 a is covered with the sealing resin 6 .
  • the opposing surface 10 b faces the support member 2 and the wiring layer 4 .
  • each of the first electronic component 1 A and the second electronic component 1 B includes a body portion 11 and a plurality of electrode pads 12 .
  • the body portion 11 contains a semiconductor material.
  • Each of the electrode pads 12 is electrically connected to a circuit (not shown) formed in the body portion 11 .
  • the opposing surface 10 b corresponds to a lower surface (a surface facing downward in the thickness direction z) of the body portion 11 .
  • each electrode pad 12 projects downwardly in the thickness direction z from the opposing surface 10 b .
  • each electrode pad 12 may be flush with the opposing surface 10 b , or may be recessed upwardly in the thickness direction z from the opposing surface 10 b .
  • the opposing surface 10 b is partially covered with an insulating film (not shown), and each electrode pad 12 is exposed from the insulating film.
  • the insulating film contains, for example, polyimide or polybenzoxazole.
  • Each electrode pad 12 contains metal, such as aluminum, silver, gold, or copper.
  • Each electrode pad 12 may have a single-layer structure or a multilayer stacked structure.
  • the support member 2 supports the first electronic component 1 A and the second electronic component 1 B.
  • the support member 2 contains, for example, a resin material.
  • the resin material may be identical to or different from that of the sealing resin 6 .
  • the support member 2 may contain the resin material containing a filler such as silica.
  • the support member 2 may contain a material other than a resin, such as an intrinsic single-crystal semiconductor (e.g., silicon (Si)), glass, or ceramic.
  • the support member 2 has a rectangular shape in plan view.
  • the thickness (dimension along the thickness direction z) of the support member 2 is not particularly limited, and is in a range from 30 ⁇ m to 300 ⁇ m, for example.
  • the support member 2 includes a support surface 21 , a reverse surface 22 , and a plurality of side surfaces 23 .
  • the support surface 21 and the reverse surface 22 are spaced apart from each other in the thickness direction z.
  • the support surface 21 and the reverse surface 22 face away from each other.
  • the support surface 21 is the upper surface of the support member 2
  • the reverse surface 22 is the lower surface of the support member 2 .
  • the support surface 21 faces (the opposing surfaces 10 b of) the first electronic component 1 A and the second electronic component 1 B.
  • the reverse surface 22 faces a circuit board when the electronic device A 10 is mounted on the circuit board.
  • the support surface 21 is covered with the sealing resin 6 , and the reverse surface 22 is exposed from the sealing resin 6 . As shown in FIGS.
  • each of the side surfaces 23 is sandwiched between the support surface 21 and the reverse surface 22 .
  • Each side surface 23 has an upper end in the thickness direction z connected to the support surface 21 , and a lower end in the thickness direction z connected to the reverse surface 22 .
  • Each side surface 23 is flat and orthogonal to the support surface 21 and the reverse surface 22 . As shown in FIGS. 2 to 7 , the side surfaces 23 include one facing one side in the first direction x, one facing another side in the first direction x, one facing one side in the second direction y, and one facing another side in the second direction y.
  • Each of the bonding portions 31 and 32 bonds the wiring layer 4 to either the first electronic component 1 A or the second electronic component 1 B.
  • the wiring layer 4 is bonded to the first electronic component 1 A through the bonding portions 31 and to the second electronic component 1 B through the bonding portions 32 .
  • Each of the bonding portions 31 and 32 is a conductive bonding material.
  • Each bonding portion 31 and 32 is, for example, solder.
  • the solder includes an alloy containing tin (Sn) (e.g., a Sn—Ag (silver) alloy), and is used together with flux.
  • the compositions of the bonding portions 31 and 32 are not limited to this example.
  • Each bonding portion 31 and 32 may be a sintered metal or a conductive paste material instead of solder.
  • the bonding portions 31 are interposed between the respective electrode pads 12 of the first electronic component 1 A and the wiring layer 4 , and bonds them. Hence, the first electronic component 1 A is electrically connected to the wiring layer 4 via the bonding portions 31 .
  • the bonding portions 32 are interposed between the respective electrode pads 12 of the second electronic component 1 B and the wiring layer 4 , and bonds them. Hence, the second electronic component 1 B is electrically connected to the wiring layer 4 via the bonding portions 32 .
  • the wiring layer 4 is a conductor disposed within the electronic device A 10 .
  • the wiring layer 4 electrically connects the first electronic component 1 A and the second electronic component 1 B to the terminal 52 together with the through conductor 51 .
  • the wiring layer 4 is interposed between the support member 2 and the sealing resin 6 .
  • the wiring layer 4 is formed on and in contact with the support surface 21 of the support member 2 .
  • the wiring layer 4 includes a plurality of first wiring portions 41 , a second wiring portion 42 , and a plurality of third wiring portions 43 .
  • the first wiring portions 41 , the second wiring portion 42 , and the third wiring portions 43 are spaced apart from one another.
  • Each of the first wiring portions 41 is electrically connected to the first electronic component 1 A.
  • the columnar conductor 7 is stood from the second wiring portion 42 .
  • Each of the third wiring portions 43 is electrically connected to the second electronic component 1 B.
  • the wiring layer 4 (each of the first wiring portions 41 , the second wiring portion 42 , and the third wiring portions 43 ) includes a seed layer 401 and a plating layer 402 , for example.
  • the seed layer 401 is formed on the support surface 21 and is in contact with the support member 2 .
  • the seed layer 401 contains, for example, titanium.
  • the plating layer 402 is laminated on the seed layer 401 .
  • the plating layer 402 contains, for example, copper.
  • the wiring layer 4 may be a single layer made of a conductive material.
  • the thickness (dimension along the thickness direction z) of the wiring layer 4 is not particularly limited, and is, for example, in a range from 10 ⁇ m to 100 ⁇ m.
  • the through conductor 51 penetrates the support member 2 in the thickness direction z.
  • the through conductor 51 is coupled to the wiring layer 4 and the terminal 52 , and electrically connects the wiring layer 4 to the terminal 52 .
  • the through conductor 51 contains, for example, metal such as copper.
  • the through conductor 51 includes a plurality of first conductor portions 511 , a second conductor portion 512 , and a plurality of third conductor portions 513 .
  • the first conductor portions 511 , the second conductor portion 512 , and the third conductor portions 513 are spaced apart from one another.
  • the first conductor portions 511 are connected to the respective first wiring portions 41 .
  • the planar shape of each first conductor portion 511 is not particularly limited, and in the illustrated example, it is rectangular.
  • each first conductor portion 511 has an upper surface (i.e., a surface facing upward in the thickness direction z) that is flush with the support surface 21 of the support member 2 .
  • the upper surface of each first conductor portion 511 is in contact with the corresponding first wiring portion 41 .
  • all the first conductor portions 511 have side surfaces (facing the first direction x or the second direction y) that are covered with the support member 2 . However, some of the side surfaces may alternatively be exposed from the support member 2 .
  • Each of the first conductor portions 511 has a first end surface 511 a .
  • the first end surface 511 a described below is, unless otherwise specifically noted, common among the first conductor portions 511 .
  • the first end surface 511 a faces downward in the thickness direction z.
  • the first end surface 511 a faces away from the sealing resin 6 in the thickness direction z.
  • the first end surface 511 a is exposed from the reverse surface 22 of the support member 2 . In an example shown in FIG. 8 , the first end surface 511 a is flush with the reverse surface 22 .
  • the second conductor portion 512 is connected to the second wiring portion 42 .
  • the planar shape of the second conductor portion 512 is not particularly limited, and in the illustrated example, it is a band extending in the second direction y.
  • the second conductor portion 512 has an upper surface (a surface facing upward in the thickness direction z) that is flush with the support surface 21 of the support member 2 .
  • the upper surface of the second conductor portion 512 is in contact with the second wiring portion 42 .
  • the second conductor portion 512 is disposed between the first conductor portions 511 and the third conductor portions 513 in the second direction y.
  • the second conductor portion 512 includes a second end surface 512 a .
  • the second end surface 512 a faces downward in the thickness direction z.
  • the second end surface 512 a faces away from the sealing resin 6 in the thickness direction z.
  • the second end surface 512 a is exposed from the reverse surface 22 of the support member 2 . In an example shown in FIG. 8 , the second end surface 512 a is flush with the reverse surface 22 .
  • the third conductor portions 513 are connected to the respective third wiring portions 43 .
  • the planar shape of each third conductor portion 513 is not particularly limited, and in the illustrated example, it is rectangular.
  • each third conductor portion 513 has an upper surface (a surface facing upward in the thickness direction z) that is flush with the support surface 21 of the support member 2 .
  • the upper surface of each third conductor portion 513 is in contact with the corresponding third wiring portion 43 .
  • all the third conductor portions 513 have side surfaces (facing the first direction x or the second direction y) that are covered with the support member 2 . However, some of the side surfaces may alternatively be exposed from the support member 2 .
  • Each of the third conductor portions 513 has a third end surface 513 a .
  • the third end surface 513 a described below is, unless otherwise specifically noted, common among the third conductor portions 513 .
  • the third end surface 513 a faces downward in the thickness direction z.
  • the third end surface 513 a faces away from the sealing resin 6 in the thickness direction z.
  • the third end surface 513 a is exposed from the reverse surface 22 of the support member 2 . In an example shown in FIG. 8 , the third end surface 513 a is flush with the reverse surface 22 .
  • the terminal 52 is a conductor that is electrically connected to the wiring layer 4 and exposed outside the electronic device A 10 .
  • the terminal 52 serves as a terminal for mounting the electronic device A 10 on a circuit board.
  • the terminal 52 is in contact with a portion of the through conductor 51 that is exposed from the reverse surface 22 of the support member 2 .
  • the terminal 52 is located below the support member 2 in the thickness direction z.
  • the terminal 52 projects from the reverse surface 22 .
  • the terminal 52 is formed, for example, by electroless plating.
  • the terminal 52 may include a plurality of metal layers of a Ni layer, a palladium (Pd) layer and a gold (Au) layer laminated in this order from the side in contact with the through conductor 51 .
  • the terminal 52 may include a plurality of metal layers of a Ni layer and an Au layer laminated in this order, or a Cu layer, an Ag layer, and a Sn layer laminated in this order, from the side in contact with the through conductor 51 .
  • the material and method of forming the terminal 52 are not limited to these examples.
  • the terminal 52 includes a plurality of first terminal portions 521 , a second terminal portion 522 , and a plurality of third terminal portions 523 .
  • the first terminal portions 521 , the second terminal portion 522 , and the third terminal portions 523 are spaced apart from one another.
  • the first terminal portions 521 are individually disposed on the first conductor portions 511 .
  • the first terminal portions 521 are in contact with and cover the respective first end surfaces 511 a of the first conductor portions 511 .
  • the second terminal portion 522 is in contact with and covers the second end surface 512 a of the second conductor portion 512 .
  • the third terminal portions 523 are individually disposed on the third conductor portions 513 .
  • the third terminal portions 523 are in contact with and cover the respective third end surfaces 513 a of the third conductor portions 513 .
  • the sealing resin 6 is made of a synthetic resin mainly containing, for example, a black epoxy resin.
  • the sealing resin 6 may contain a filler such as silica mixed into the epoxy resin.
  • the sealing resin 6 covers the first electronic component 1 A, the second electronic component 1 B, the columnar conductor 7 , and the like.
  • the sealing resin 6 also covers the bonding portions 31 and 32 , a plurality of barrier metals 35 , the wiring layer 4 and a part of the support member 2 .
  • the sealing resin 6 is formed on the support surface 21 .
  • the sealing resin 6 has a rectangular shape in plan view.
  • the thickness (dimension along the thickness direction z) of the sealing resin 6 is not particularly limited, and is, for example, in a range from 200 ⁇ m to 1200 ⁇ m. As shown in FIGS. 1 , 2 , 4 , 6 , and 7 , the sealing resin 6 includes a resin obverse surface 61 , a resin reverse surface 62 , and a plurality of resin side surfaces 63 .
  • the resin obverse surface 61 and the resin reverse surface 62 are spaced apart from each other in the thickness direction z.
  • the resin obverse surface 61 and the resin reverse surface 62 face away from each other in the thickness direction z.
  • the resin obverse surface 61 faces the same side in the thickness direction z as the element top surface 10 a of the first electronic component 1 A, the element top surface 10 a of the second electronic component 1 B, and the support surface 21 .
  • the resin reverse surface 62 faces the same side in the thickness direction z as the opposing surface 10 b of the first electronic component 1 A, the opposing surface 10 b of the second electronic component 1 B, and the reverse surface 22 .
  • the resin reverse surface 62 is in contact with the support surface 21 .
  • the resin reverse surface 62 has irregularities corresponding to the shape of the wiring layer 4 .
  • each of the resin side surfaces 63 is sandwiched between and connected to the resin obverse surface 61 and the resin reverse surface 62 .
  • the resin side surfaces 63 include one facing one side in the first direction x, one facing another side in the first direction x, one facing one side in the second direction y, and one facing another side in the second direction y.
  • Each of the resin side surfaces 63 is flush with a corresponding one of the side surfaces 23 .
  • the columnar conductor 7 is disposed in the side where the support surface 21 faces, with respect to the support member 2 .
  • the columnar conductor 7 is disposed on the second wiring portion 42 and extends upwardly in the thickness direction z from the second wiring portion 42 .
  • the columnar conductor 7 is electrically connected to the second conductor portion 512 and the second terminal portion 522 via the second wiring portion 42 .
  • the planar shape of the columnar conductor 7 is not particularly limited, and in the illustrated example, it is a band extending in the second direction y. In plan view, the columnar conductor 7 is disposed between the first electronic component 1 A and the second electronic component 1 B.
  • the columnar conductor 7 contains, for example, metal such as copper.
  • the columnar conductor 7 is formed, for example, by electroplating.
  • the columnar conductor 7 is taller than the first electronic component 1 A and the second electronic component 1 B.
  • the thickness (dimension along the thickness direction z) of the columnar conductor 7 is not particularly limited, and is, for example, in a range from 100 ⁇ m to 300 ⁇ m. As understood from FIGS.
  • a pair of conductor end surfaces 72 extend in the second direction y from the first conductor portions 511 and the third conductor portions 513 or the first terminal portions 521 and the third terminal portions 523 arranged along one edge of the support member 2 in the second direction y, to the first conductor portions 511 and the third conductor portions 513 or the first terminal portions 521 and the third terminal portions 523 arranged along the other edge of the support member 2 .
  • the columnar conductor 7 includes a conductor top surface 71 and the pair of conductor end surfaces 72 .
  • the conductor top surface 71 faces upward in the thickness direction z.
  • the conductor top surface 71 faces the same side as the support surface 21 in the thickness direction z.
  • the conductor top surface 71 also faces the same side as the element top surfaces 10 a of the first electronic component 1 A, the element top surfaces 10 a of the second electronic component 1 B, and the resin obverse surface 61 .
  • the conductor top surface 71 is covered with the sealing resin 6 .
  • the pair of conductor end surfaces 72 are end surfaces of the columnar conductor 7 in the second direction y.
  • One of the conductor end surfaces 72 faces one side in the second direction y, and the other faces another side in the second direction y.
  • the conductor end surfaces 72 are disposed in opposite sides of the first electronic component 1 A, respectively, and outside of the first electronic component 1 A.
  • the conductor end surfaces 72 are disposed in opposite sides of the second electronic component 1 B, respectively, and outside of the second electronic component 1 B.
  • the conductor end surfaces 72 are covered with the scaling resin 6 .
  • FIGS. 9 to 18 are cross-sectional views each showing a step in the method of manufacturing the electronic device A 10 . These cross-sectional views each correspond to the sectional view shown in FIG. 7 .
  • a support substrate 80 is prepared, and a plurality of columnar bodies 851 are formed on the support substrate 80 .
  • the support substrate 80 contains, for example, an intrinsic single-crystal semiconductor material such as Si.
  • a silicon wafer may be prepared as the support substrate 80 .
  • the support substrate 80 includes a substrate obverse surface 80 a and a substrate reverse surface 80 b that face away from each other in the thickness direction z.
  • the columnar bodies 851 are formed, for example, by the following steps. First, a seed layer is formed on the substrate obverse surface 80 a , for example, by sputtering.
  • the columnar bodies 851 are formed by electroplating. Thereafter, the resist and the unnecessary seed layer are removed. Through these steps, the columnar bodies 851 are formed on the substrate obverse surface 80 a of the support substrate 80 . The columnar bodies 851 will be formed into the through conductors 51 .
  • the support member 2 is formed on the substrate obverse surface 80 a of the support substrate 80 so as to cover the columnar bodies 851 .
  • the support member 2 is made of a synthetic resin mainly containing, for example, a black epoxy resin.
  • the support member 2 may be formed by molding.
  • the support member 2 may be made of an insulative resin material instead of the synthetic resin.
  • the support member 2 includes the support surface 21 and the reverse surface 22 that face away from each other in the thickness direction z.
  • the support surface 21 faces the same side as the substrate obverse surface 80 a
  • the reverse surface 22 faces the substrate obverse surface 80 a .
  • the support member 2 is formed so as to completely cover the columnar bodies 851 .
  • the support member 2 is ground so as to form the through conductors 51 .
  • the support member 2 is ground downwardly from the support surface 21 in the thickness direction z until the columnar bodies 851 are exposed from the support surface 21 .
  • the grinding method is not particularly limited.
  • the support member 2 may be thinned by a method other than grinding.
  • the through conductors 51 are formed from the columnar bodies 851 .
  • the formed through conductors 51 include the first conductor portions 511 , the second conductor portion 512 , and the third conductor portions 513 .
  • the wiring layer 4 is formed, for example, by the following steps. First, a seed layer 401 is formed on the support surface 21 and on the through conductors 51 .
  • the seed layer 401 may be formed by sputtering. For example, the seed layer 401 is formed by sequentially laminating a Ti layer and a Cu layer.
  • a resist is patterned on the seed layer 401 , and a plating layer 402 is formed by electroplating.
  • the plating layer 402 contains, for example, copper. Thereafter, the resist and the unnecessary seed layer 401 (the portion of the seed layer 401 exposed from the plating layer 402 ) are removed. Through these steps, the wiring layer 4 is formed.
  • the formed wiring layer 4 includes the first wiring portions 41 , the second wiring portion 42 , and the third wiring portions 43 .
  • the barrier metals 35 and the bonding portions 31 and 32 are sequentially formed.
  • Each barrier metal 35 contain metal different from that of the wiring layer 4 such as Ni.
  • solder pastes serving as the bonding portion 31 or 32 are formed on the respective barrier metals 35 by, for example, screen printing.
  • the barrier metals 35 and the bonding portions 31 and 32 may be formed by electroplating, for example. In the electroplating, a seed layer for serving as an electrical conduction path may be newly formed, or the seed layer 401 formed in the step of forming the wiring layer 4 may be used without removal.
  • the barrier metals 35 and the bonding portions 31 and 32 are respectively formed in regions where the first electronic component 1 A and the second electronic component 1 B will be bonded.
  • the columnar conductor 7 contains metal, such as copper.
  • the columnar conductor 7 is formed by, for example, electroplating. In the electroplating, a seed layer for electrical conduction path may be newly formed, or the seed layer 401 formed in the step of forming the wiring layer 4 may be used without removal.
  • the first electronic component 1 A and the second electronic component 1 B are mounted and bonded.
  • the electrode pads 12 of the first electronic component 1 A are individually aligned with the bonding portions 31
  • the electrode pads 12 of the second electronic component 1 B are individually aligned with the bonding portions 32 .
  • a reflow process is performed with the first electronic component 1 A and the second electronic component 1 B mounted. The heat generated during the reflow melts the bonding portions 31 and 32 . Thereafter, the molten bonding portions 31 and 32 are cooled.
  • the bonding portions 31 and 32 solidify, and the first electronic component 1 A and the second electronic component 1 B are bonded.
  • the first electronic component 1 A and the second electronic component 1 B are flip-chip mounted with their opposing surfaces 10 b facing the wiring layer 4 .
  • the sealing resin 6 is formed.
  • the sealing resin 6 is formed on the support member 2 so as to cover the first electronic component 1 A, the second electronic component 1 B, the wiring layer 4 , and the columnar conductor 7 .
  • the sealing resin 6 may be formed by molding.
  • the scaling resin 6 is made of a synthetic resin mainly containing, for example, a black epoxy resin.
  • the sealing resin 6 may be made of an insulative resin material instead of the synthetic resin.
  • the sealing resin 6 includes the resin obverse surface 61 that faces upward in the thickness direction z. In order to thin the sealing resin 6 , the sealing resin 6 may be ground downwardly from the resin obverse surface 61 in the thickness direction z, as long as the columnar conductor 7 is not exposed.
  • the support substrate 80 is removed.
  • the support substrate 80 is ground from side of the substrate reverse surface 80 b in the state shown in FIG. 17 .
  • the grinding is performed from the substrate reverse surface 80 b side.
  • the grinding continues even after removal of the support substrate 80 , thereby thinning the support member 2 and the through conductor 51 (each of the first conductor portions 511 , the second conductor portion 512 , and the third conductor portions 513 ). This thinning process may be omitted.
  • the terminal 52 is formed.
  • the terminal 52 is formed on the surface of the through conductor 51 that is exposed from the reverse surface 22 .
  • the terminal 52 may be formed by electroless plating. In the electroless plating, a Ni layer, a Pd layer, and an Au layer are laminated in this order on the through conductor 51 .
  • the formed terminal 52 includes the first terminal portions 521 , the second terminal portion 522 , and the third terminal portions 523 .
  • the sealing resin 6 and the support member 2 are cut along the cutting line CL shown in FIG. 18 , to separate into individual pieces.
  • the cutting of the sealing resin 6 and the support member 2 may be performed by a cutting process with a dicing blade. As a result, the sealing resin 6 and the support member 2 are divided along the cutting line CL.
  • the electronic device A 10 shown in FIGS. 1 to 8 is manufactured.
  • the method of manufacturing the electronic device A 10 is not limited to the described example.
  • the support member 2 contains an intrinsic single-crystal semiconductor (such as Si)
  • the device may be manufactured as follows. First, grooves are formed on the support substrate 80 (silicon wafer) by etching or the like. Then, the columnar bodies 851 (through conductor 51 ) are formed in the grooves. Thereafter, without forming the support member 2 (resin layer), the wiring layer 4 is formed.
  • the support substrate 80 may be ground, instead of being removed, until the columnar bodies 851 (through conductor 51 ) formed in the grooves are exposed. By modifying the process in this way, the electronic device A 10 including the support member 2 made of a semiconductor material may be manufactured.
  • the electronic device A 10 includes the first electronic component 1 A, the support member 2 , and the columnar conductor 7 .
  • the support member 2 includes the support surface 21 supporting the first electronic component 1 A.
  • the columnar conductor 7 is disposed on the support surface 21 (i.e., in a direction where the support surface 21 faces with respect to the support member 2 ). With such a configuration, the columnar conductor 7 functions as an electromagnetic shield. Hence, the first electronic component 1 A can be prevented from being exposed to external electromagnetic noise. Therefore, the electronic device A 10 is advantageous for improving operational reliability.
  • the columnar conductor 7 is disposed between the first electronic component 1 A and the second electronic component 1 B.
  • Such a configuration can suppress the propagation of electromagnetic noise (radiated noise) generated from the second electronic component 1 B to the first electronic component 1 A, and the propagation of electromagnetic noise (radiated noise) generated from the first electronic component 1 A to the second electronic component 1 B.
  • mutual electromagnetic interference between the first electronic component 1 A and the second electronic component 1 B can be suppressed.
  • the electronic device A 10 is advantageous for improving operational reliability.
  • the electronic device A 10 includes the columnar conductor 7 disposed between the first wiring portions 41 and the third wiring portions 43 .
  • the first wiring portions 41 are electrically connected to the first electronic component 1 A
  • the third wiring portions 43 are electrically connected to the second electronic component 1 B.
  • the first wiring portions 41 transmit input signals to the first electronic component 1 A and output signals from the first electronic component 1 A.
  • the third wiring portions 43 transmit input signals to the second electronic component 1 B and output signals from the second electronic component 1 B.
  • the first wiring portions 41 and the third wiring portions 43 may emitted or receive electromagnetic noise.
  • the arrangement of the columnar conductor 7 between the first wiring portions 41 and the third wiring portions 43 can suppress mutual electromagnetic interference between an electric circuit including the first electronic component 1 A and the first wiring portions 41 and an electric circuit including the second electronic component 1 B and the third wiring portions 43 .
  • the electronic device A 10 is advantageous for improving operational reliability.
  • the conductor top surface 71 of the columnar conductor 7 is located between the element top surface 10 a of the first electronic component 1 A and the resin obverse surface 61 in the thickness direction z.
  • the columnar conductor 7 extends to an upper position than the first electronic component 1 A. This enhances the effect of suppressing the intrusion of electromagnetic noise (e.g., radiated noise from the second electronic component 1 B) into the first electronic component 1 A.
  • the conductor top surface 71 of the columnar conductor 7 is located between the element top surface 10 a of the second electronic component 1 B and the resin obverse surface 61 in the thickness direction z.
  • the columnar conductor 7 extends to an upper position than the first electronic component 1 A and the second electronic component 1 B. This can suppress electromagnetic noise from propagating over the columnar conductor 7 from the first electronic component 1 A to the second electronic component 1 B, or vice versa. Thus, the mutual electromagnetic interference between the first electronic component 1 A and the second electronic component 1 B can be more effectively suppressed. Accordingly, the electronic device A 10 is more advantageous for improving operational reliability.
  • the pair of conductor end surfaces 72 of the columnar conductor 7 are located outside of the first electronic component 1 A in the second direction y. In this configuration, the columnar conductor 7 extends in the second direction y beyond the outer edges of the first electronic component 1 A. This enhances the effect of suppressing the intrusion of electromagnetic noise (e.g., radiated noise from the second electronic component 1 B) into the first electronic component 1 A. Furthermore, in the electronic device A 10 , the pair of conductor end surfaces 72 of the columnar conductor 7 are located outside of the second electronic component 1 B in the second direction y. In this configuration, the columnar conductor 7 extends in the second direction y beyond the outer edges of the second electronic component 1 B.
  • electromagnetic noise e.g., radiated noise from the second electronic component 1 B
  • This can suppress electromagnetic noise from propagating around the columnar conductor 7 from the first electronic component 1 A to the second electronic component 1 B, or vice versa.
  • the mutual electromagnetic interference between the first electronic component 1 A and the second electronic component 1 B can be more effectively suppressed. Accordingly, the electronic device A 10 is more advantageous for improving operational reliability.
  • the electronic device A 10 includes the second conductor portion 512 and the second terminal portion 522 .
  • the second terminal portion 522 is exposed outside the electronic device A 10 and is electrically connected to the columnar conductor 7 .
  • the columnar conductor 7 can be grounded via the second terminal portion 522 .
  • the electromagnetic shielding effect provided by the columnar conductor 7 can be further enhanced in the electronic device A 10 .
  • FIG. 19 shows an electronic device A 11 according to a first variation of the first embodiment.
  • the electronic device A 11 differs from the electronic device A 10 in the following points.
  • the wiring layer 4 of the electronic device A 11 does not include the second wiring portion 42 .
  • the columnar conductor 7 is directly formed on the first conductor portion 511 and is in contact with the upper surface of the first conductor portion 511 .
  • FIG. 20 shows an electronic device A 12 according to a second variation of the first embodiment.
  • the electronic device A 12 differs from the electronic device A 10 in the following points.
  • the through conductor 51 does not include the second conductor portion 512
  • the terminal 52 does not include the second terminal portion 522 .
  • the second wiring portion 42 of the wiring layer 4 is formed directly on the support surface 21 of the support member 2 and is in contact with the support surface 21 .
  • FIGS. 21 and 22 show an electronic device A 13 according to a third variation of the first embodiment.
  • the electronic device A 13 differs from the electronic device A 10 in the following points.
  • the second conductor portion 512 and the second terminal portion 522 are formed in different regions.
  • the second conductor portion 512 and the second terminal portion 522 are each formed on the substantially entire region below the second wiring portion 42 in the thickness direction z.
  • they are formed only in a part of the region below the second wiring portion 42 in the thickness direction z.
  • the positions of the second conductor portion 512 and the second terminal portion 522 as viewed in the thickness direction z can be appropriately modified depending on the range of the second wiring portion 42 , and they are not limited to the region below the columnar conductor 7 .
  • the columnar conductor 7 serves as an electromagnetic shield, as with the electronic device A 10 . Accordingly, the electronic devices A 11 to A 13 are advantageous for improving operational reliability, as with the electronic device A 10 . In addition, the electronic devices A 11 to A 13 may have a configuration in common with the electronic device A 10 , thereby achieving the same effect as the electronic device A 10 .
  • FIG. 23 shows an electronic device A 20 according to a second embodiment.
  • the electronic device A 20 differs from the electronic device A 10 in that it includes two columnar conductors 7 .
  • the electronic device A 20 includes two columnar conductors 7 , which are referred to as a first columnar conductor 7 A and a second columnar conductor 7 B.
  • the first columnar conductor 7 A and the second columnar conductor 7 B each have a band-like shape extending in the second direction y in plan view.
  • the first columnar conductor 7 A and the second columnar conductor 7 B are spaced apart from each other in the first direction x and are parallel to each other.
  • Each of the first columnar conductor 7 A and the second columnar conductor 7 B is disposed between the first electronic component 1 A and the second electronic component 1 B.
  • the wiring layer 4 includes two second wiring portions 42 .
  • the first columnar conductor 7 A is formed on one of the second wiring portions 42
  • the second columnar conductor 7 B is formed on the other of the second wiring portions 42 .
  • each of the first columnar conductor 7 A and the second columnar conductor 7 B functions as an electromagnetic shield. Accordingly, the electronic device A 20 is advantageous for improving operational reliability, as with the electronic device A 10 .
  • the electronic device A 20 may have a configuration in common with the electronic devices A 10 to A 13 , thereby achieving the same effect as the electronic devices A 10 to A 13 .
  • the electronic device A 20 includes the first columnar conductor 7 A and the second columnar conductor 7 B. Accordingly, the mutual electromagnetic interference between the first electronic component 1 A and the second electronic component 1 B can be more effectively suppressed.
  • FIG. 24 shows an electronic device A 21 according to a variation of the second embodiment.
  • the electronic device A 21 differs from the electronic device A 20 in the following points.
  • the first columnar conductor 7 A and the second columnar conductor 7 B are both formed on a single second wiring portion 42 .
  • the first columnar conductor 7 A and the second columnar conductor 7 B may be formed on two different second wiring portions 42 , or may be formed on a common second wiring portion 42 .
  • each of the first columnar conductor 7 A and the second columnar conductor 7 B functions as an electromagnetic shield, as with the electronic device A 20 . Accordingly, the electronic device A 21 is advantageous for improving operational reliability, as with the electronic device A 20 .
  • the electronic device A 21 may have a configuration in common with the electronic devices A 10 to A 13 and A 20 , thereby achieving the same effect as the electronic devices A 10 to A 13 and A 20 .
  • the second embodiment including its variation
  • the two columnar conductors 7 (the first columnar conductor 7 A and the second columnar conductor 7 B) are provided.
  • the number of columnar conductors 7 is not limited to two and may be three or more.
  • FIGS. 25 and 26 show an electronic device A 30 according to a third embodiment.
  • the electronic device A 30 differs from the electronic device A 10 in that the columnar conductor 7 includes a plurality of separated portions 70 .
  • the separated portions 70 are arranged along the second direction y and are spaced apart from one another.
  • the conductor top surface 71 corresponds to the upper surfaces (surfaces facing upward in the thickness direction z) of the separated portions 70 .
  • the pair of conductor end surfaces 72 corresponds to the surface of the separated portion 70 located at one end in the second direction y and the surface of the separated portion 70 located at the opposite end in the second direction y.
  • the spacing between the separated portions 70 is not particularly limited, and is, for example, in a range from 30 ⁇ m to 50 ⁇ m.
  • the columnar conductor 7 (the separated portions 70 ) functions as an electromagnetic shield, as with the electronic device A 10 . Accordingly, the electronic device A 30 is advantageous for improving operational reliability, as with the electronic device A 10 .
  • the electronic device A 30 may have a configuration in common with the electronic devices A 11 to A 13 , A 20 and A 21 , thereby achieving the same effect as the electronic devices A 11 to A 13 , A 20 and A 21 .
  • the columnar conductor 7 is not limited to a continuous structure extending from one of the pair of conductor end surfaces 72 to the other, but may alternatively be divided into a plurality of portions.
  • the spacing between the separated portions 70 is, for example, in a range from 30 ⁇ m to 50 ⁇ m. Such a configuration allows the sealing resin 6 to be filled between the separated portions 70 , while adequately maintaining the electromagnetic shielding effect.
  • FIG. 27 shows an electronic device A 31 according to a variation of the third embodiment.
  • the electronic device A 31 differs from the electronic device A 30 in the following points.
  • the electronic device A 31 includes the first columnar conductor 7 A and the second columnar conductor 7 B, and each of them includes a plurality of separated portions 70 .
  • gaps between the separated portions 70 of the first columnar conductor 7 A and gaps of the second columnar conductor 7 B are arranged in a staggered manner in the second direction y.
  • the gaps between the separated portions 70 of the first columnar conductor 7 A overlaps with the respective separated portions 70 of the second columnar conductor 7 B.
  • the gaps between the separated portions 70 of the first columnar conductor 7 A and the gaps of the second columnar conductor 7 B may be aligned in the second direction y.
  • the gaps between the separated portions 70 of the first columnar conductor 7 A overlaps with the respective gaps between the separated portions 70 of the second columnar conductor 7 B.
  • the first columnar conductor 7 A and the second columnar conductor 7 B are formed on the respective second wiring portions 42 , as with the electronic device A 20 .
  • they may instead be formed on a single second wiring portion 42 (a common second wiring portion 42 ).
  • the columnar conductor 7 functions as an electromagnetic shield, as with the electronic device A 30 . Accordingly, the electronic device A 31 is advantageous for improving operational reliability, as with the electronic device A 30 .
  • the electronic device A 31 may have a configuration in common with the electronic devices A 10 to A 13 , A 20 , A 21 and A 30 , thereby achieving the same effect as the electronic devices A 10 to A 13 , A 20 , A 21 and A 30 .
  • the gaps between the separated portions 70 of the first columnar conductor 7 A and the gaps of the second columnar conductor 7 B are arranged in a staggered manner in the second direction y.
  • the second columnar conductor 7 B serves as a barrier to the electromagnetic noise (and vice versa). Accordingly, the electronic device A 31 can more effectively suppress mutual electromagnetic interference between the first electronic component 1 A and the second electronic component 1 B, compared to the electronic device A 30 .
  • the separated portions 70 are formed on the single second wiring portion 42 (the common second wiring portion 42 ).
  • the wiring layer 4 may alternatively include a plurality of second wiring portions 42 , and the separated portions 70 may be individually formed on the respective second wiring portions 42 .
  • each of the first electronic component 1 A and the second electronic component 1 B is a flip-chip mounted device (e.g., an LSI).
  • a flip-chip mounted device e.g., an LSI
  • one or both of these components may be a surface-mount device (SMD).
  • FIGS. 28 and 29 show an electronic device in which the first electronic component 1 A is an LSI and the second electronic component 1 B is an SMD.
  • the second electronic component 1 B is, for example, either a resistor, a capacitor, an inductor, or a diode.
  • the second electronic component 1 B includes a pair of terminals 19 .
  • the pair of terminals 19 are disposed at opposite ends of the second electronic component 1 B in the first direction x, respectively.
  • the pair of terminals 19 may be disposed at opposite ends of the second electronic component 1 B in the second direction y, respectively.
  • each terminal 19 is bonded to the barrier metal 35 on the third wiring portion 43 via the bonding portion 32 .
  • a fillet is formed on each bonding portion 32 .
  • each of the first electronic component 1 A and the second electronic component 1 B is mounted by flip-chip bonding or is a surface mount device (SMD) is not particularly limited.
  • the first to third embodiments described above are described as examples where the thickness of the columnar conductor 7 (the first columnar conductor 7 A and the second columnar conductor 7 B) is greater than the thickness of each of the first electronic component 1 A and the second electronic component 1 B.
  • the thickness of the columnar conductor 7 may alternatively be smaller than the thickness of the first electronic component 1 A or the thickness of the second electronic component 1 B.
  • the width of the columnar conductor 7 is greater than the width (dimension along the second direction y) of each of the first electronic component 1 A and the second electronic component 1 B.
  • the width of the columnar conductor 7 may alternatively be smaller than the width of the first electronic component 1 A or the width of the second electronic component 1 B.
  • the electronic devices according to the present disclosure are not limited to the embodiments described above.
  • the specific configuration of each part of the electronic device of the present disclosure may suitably be designed and changed in various manners.
  • the present disclosure includes the embodiments described in the following clauses.
  • An electronic device comprising:
  • the first electronic component includes a first element top surface facing the same side as the conductor top surface in the thickness direction
  • the columnar conductor includes a plurality of separated portions spaced apart from each other, and the plurality of separated portions are arrayed along a second direction orthogonal to the thickness direction and the first direction, as viewed in the thickness direction.
  • the electronic device according to any one of clauses 1 to 6 , further comprising a wiring layer interposed between the support member and the sealing resin.
  • the wiring layer includes a seed layer in contact with the support member, and a plating layer laminated on the seed layer, and
  • the wiring layer includes a second wiring portion interposed between the columnar conductor and the second conductor portion.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
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