US20210217781A1 - Array Substrate, Manufacturing Method Thereof, and Display Panel - Google Patents

Array Substrate, Manufacturing Method Thereof, and Display Panel Download PDF

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Publication number
US20210217781A1
US20210217781A1 US16/643,233 US201916643233A US2021217781A1 US 20210217781 A1 US20210217781 A1 US 20210217781A1 US 201916643233 A US201916643233 A US 201916643233A US 2021217781 A1 US2021217781 A1 US 2021217781A1
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insulating layer
electrode
array substrate
layer
gate
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Dong Li
Xiaolong Li
Liangjian Li
Hongwei TIAN
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Assigned to BOE TECHNOLOGY GROUP CO., LTD. reassignment BOE TECHNOLOGY GROUP CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LI, DONG, LI, Liangjian, LI, XIAOLONG, TIAN, Hongwei
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/3258—
    • H01L27/3276—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Embodiments of the present disclosure relate to an array substrate, a manufacturing method thereof, and a display panel.
  • an organic light-emitting diode (OLED) display panel has characteristics of self-luminous, high contrast, low energy consumption, wide viewing angle, fast response speed, applicability to flexible panels, wide service ability temperature range, easy manufacturing, etc., and has broad prospects of development.
  • OLED organic light-emitting diode
  • flexible display devices with foldable performance are increasingly favored by people. For example, in order to achieve narrow bezel or even bezel-free display, a non-display area of the display device may be bent. Alternatively, for the sake of portability, the display device may also be fold. How to optimize the manufacturing process of the display panel is a concern in the field.
  • Some embodiments of the present disclosure provide an array substrate including a display pixel area for providing pixel units arranged in an array.
  • the array substrate further includes a base substrate; a first insulating layer, a second insulating layer and a conductive pattern layer.
  • the first insulating layer is provided on the base substrate, and the grooves are provided in the first insulating layer and in the display pixel area; the second insulating layer provided on the first insulating layer, and the second insulating layer is further filled into the grooves; and the first conductive pattern layer is provided on the second insulating layer.
  • the second insulating layer is an organic insulating layer.
  • the grooves expose the base substrate.
  • the first conductive pattern layer includes a gate line or a portion of the gate line for the display pixel area.
  • the grooves include a first portion that is parallel to the gate line or overlaps the gate line in a direction perpendicular to the base substrate.
  • the pixel unit includes a first transistor, the first transistor includes a first gate electrode, and the first gate electrode is on the side of the second insulating layer adjacent to the base substrate, and the first gate electrode is electrically connected to the gate line through a first via in the second insulating layer.
  • the array substrate further includes a gate connection electrode located between the second insulating layer and the first conductive pattern layer, and the first gate electrode is electrically connected to the gate line through the gate connection electrode.
  • the first transistor further includes a first source electrode and a first drain electrode, and the first source electrode and the first drain electrode are disposed on the same layer as the gate connection electrode and are made of the same material.
  • the array substrate further includes a data line for the display pixel area, and the data line and the first source electrode and the first drain electrode are disposed on the same layer and are made of the same material.
  • the grooves further include a second portion that is parallel to the data line or overlaps the data line in a direction perpendicular to the base substrate.
  • the pixel unit further includes a second transistor, and the second transistor includes a second gate electrode, and the second gate electrode is connected to a first source electrode or a first drain electrode of the first transistor.
  • the grooves are distributed around the second gate electrode.
  • the grooves further include a third portion, and the third portion is arranged in parallel with the second gate electrode and corresponding to the second gate electrode. In a length direction of the third groove, a length of the third portion is greater than a length of the second gate electrode.
  • the second transistor comprises a second source electrode and a second drain electrode, and in a direction perpendicular to the base substrate, the second source electrode and the second drain electrode are located between the second insulating layer and the first conductive pattern layer
  • the array substrate further includes a third insulating layer, and in a direction perpendicular to the base substrate, the third insulating layer is located between the first conductive pattern layer and the second source electrode as well as the second drain electrode.
  • the array substrate further includes a fourth insulating layer and a pixel electrode laminated on the first conductive pattern layer.
  • the second source electrode or the second drain electrode is electrically connected to the pixel electrode through a second via in the fourth insulating layer.
  • the first conductive pattern layer further includes a driving connection electrode, and the second source electrode or the second drain electrode is connected to the pixel electrode through the driving connection electrode.
  • the array substrate further includes a first capacitor electrode.
  • the first capacitor electrode is disposed between the first insulating layer and the second insulating layer.
  • the array substrate further includes a second capacitor electrode, and the second capacitor electrode is provided on the same layer as the first gate electrode and directly faces the first capacitor electrode to form a capacitor.
  • Some embodiments of the present disclosure further provide a display panel including the above-mentioned array substrate.
  • Some embodiments of the present disclosure further provide a method for manufacturing an array substrate.
  • the array substrate includes a display pixel area for providing pixel units arranged in an array, and the manufacturing method includes: providing a base substrate; forming a first insulating layer on the base substrate, and forming grooves on the first insulating layer, the grooves being formed in the display pixel area; forming a second insulating layer on the first insulating layer, and the second insulating layer is further filled into the grooves; and forming a first conductive pattern layer on the second insulating layer.
  • the first insulating layer is an organic insulating layer.
  • forming the first conductive pattern layer includes forming a gate line for the display pixel area or forming a portion of the gate line.
  • FIG. 1 is a schematic plan diagram of an array substrate provided by an embodiment of the present disclosure
  • FIG. 2 is a partially enlarged schematic diagram of an array substrate provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional view taken along a section line A-A′ of FIG. 2 ;
  • FIG. 4 is a schematic diagram of a display panel provided by an embodiment of the present disclosure.
  • FIG. 5 is a flowchart of a method for manufacturing an array substrate provided by an embodiment of the present disclosure.
  • connection are not intended to define a physical connection or mechanical connection, but may include an electrical connection, directly or indirectly.
  • “On,” “under,” “right,” “left” and the like are only used to indicate relative position relationship, and when the position of the object which is described is changed, the relative position relationship may be changed accordingly.
  • the flexible electronic device includes a flexible substrate and various circuit structures and electronic devices prepared on the flexible substrate. As needed, some parts of the flexible electronic device (such as a display area, a pad area, etc.) can be folded and fixed, or bent during use according to needs to adjust a positional relationships between different parts (such as mobile phones with multi-screen). Due to the bending stress, layer structures on the base substrate are prone to break and fall off, thereby causing a risk of a failed structure of the device.
  • Some embodiments of the present disclosure provide an array substrate which includes a base substrate and a display pixel area.
  • the display pixel area is used to provide pixel units arranged in an array, and includes: a first insulating layer, a second insulating layer, and a first conductive pattern layer.
  • the first insulating layer is provided on the base substrate, and grooves provided in the first insulating layer.
  • the second insulating layer is provided on the first insulating layer, and the second insulating layer is further filled into the groove.
  • the first conductive pattern layer is provided on the second insulating layer.
  • a contact area between the second insulating layer and the first insulating layer may be increased by providing the groove in the first insulating layer in a display pixel area of the array substrate and by filling the second insulating layer in the groove, thereby releasing the internal stress in the second insulating layer which is liable to cause fracture during bending the array substrate, and enabling the strain under the stress to mainly occur in the groove area (strain absorption region). Additionally, in a case where the array substrate is bent and a crack occurs in a laminated structure of the array, the groove can also prevent the crack from extending.
  • the arrangement in the above embodiments of the present disclosure may reduce or eliminate the risk of the second insulating layer and the structures thereon (such as the first conductive pattern layer) falling off during the bending of the array substrate, and improve the impact resistance and bending resistance of the device in the display pixel area of the array substrate, and therefore improves the performance and yield of the product.
  • the groove structure refers to a structure provided according to needs, which is different from an uneven surface structure which cannot be avoided in a conventional manufacturing method, and is also different from a via structure which serves as a connection.
  • FIG. 1 is a schematic plan diagram of an array substrate provided by some embodiments of the present disclosure.
  • the array substrate 200 includes a display pixel area 210 .
  • the display pixel area 210 is used to provide a plurality of pixel units 201 arranged in an array.
  • the array substrate further includes a plurality of gate lines 71 extending in a first direction D 1 and a plurality of data lines 61 extending in a second direction D 2 .
  • the plurality of gate lines and the data lines define a plurality of pixel regions by crossing each other.
  • a plurality of pixel units 201 are distributed in the plurality of pixel regions in a one-to-one correspondence.
  • the array substrate may further include a data driving circuit 6 and a gate driving circuit 7 .
  • the data driving circuit is configured to provide data signals for the pixel unit 201
  • the gate driving circuit is configured to provide scanning signals to the pixel unit 201 .
  • the array substrate may further include other circuits or devices for further providing other control signals of various kinds.
  • the data driving circuit and the gate driving circuit are connected to the pixel unit 201 through a data line 61 and a gate line 71 , respectively.
  • Each pixel unit 201 is connected to the gate line 71 , the data line 61 , and the like to receive a corresponding electric signal to emit light and realize display operations.
  • the array substrate may be an organic light emitting diode (OLED) array substrate or an array substrate for a liquid crystal display.
  • OLED organic light emitting diode
  • the embodiments of the present disclosure are described in detail below by taking the array substrate as an organic light emitting diode array substrate for example, but the embodiments of the present disclosure are not limited thereto.
  • each pixel unit 201 includes a light emitting element (i.e., an OLED) and a pixel circuit which drives the light emitting element to emit light.
  • the pixel circuit may include a conventional 2T1C pixel circuit, that is, including two transistors and a capacitor. One of the two transistors is a switching transistor and the other is a driving transistor.
  • the pixel circuit may also be a pixel circuit in other structures, such as a 3T1C, which is based on the aforementioned 2T1C pixel circuit or a pixel circuit further including a compensation function, a reset function, etc., which is not limited in the embodiments of the present disclosure.
  • FIG. 2 is a partially enlarged schematic view of a layout of a pixel unit in an array substrate according to a specific example of an embodiment.
  • FIG. 3 is a schematic cross-sectional view taken along a section line A-A′ of FIG. 2 .
  • FIG. 2 only illustrates the semiconductor layer 240 , the gate electrode layer 250 , and the groove areas in the array substrate, and schematically illustrates the gate line 71 and the data line 61 .
  • FIG. 3 only illustrates the light emitting element 300 , the first transistor 110 and the second transistor 120 in the pixel unit.
  • the first transistor 110 is a switching transistor, which mainly functions as a switch and controls the transmission of data signals under the control of the gate line 71 .
  • the second transistor 120 is a driving transistor, which mainly functions as a driver and provides a driving current for a pixel electrode serving as a cathode or an anode of the light emitting element.
  • the array substrate 200 includes a base substrate 211 and a first insulating layer 212 , a second insulating layer 214 , and a first conductive pattern layer 213 which are sequentially laminated on the base substrate 211 .
  • Grooves 220 are provided in the first insulating layer 212 , and the grooves 220 are provided in the display pixel area 210 ; and the second insulating layer 214 is filled in the grooves 220 .
  • the second insulating layer 214 may have a flat surface for planarization.
  • the second insulating layer 214 is an organic insulating layer.
  • the organic insulating material has better flexibility than an inorganic insulating material, so that an impact resistance and bending resistance of the array substrate 200 can be further improved.
  • the material of the second insulating layer 214 comprises at least one selected from the group consisting of polymethyl methacrylate, polycarbonate, polystyrene, epoxy resin, polyimide, and polyethylene.
  • the first insulating layer 212 may be an organic insulating material, such as resin materials like polyimide. It can also be an inorganic insulating material, such as silicon oxide, silicon nitride, silicon oxynitride or metal oxide insulating materials.
  • a material of the first conductive pattern layer 213 may include gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W), and alloy materials composed of the above metals, or conductive metal oxide materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), zinc aluminum oxide (AZO), and the like.
  • the groove 220 may be disposed in any location, where no via hole is provided, in the first insulating layer 212 .
  • Embodiments of the present disclosure don not limit the area for providing the groove 220 , as long as a formation of devices structure is not affected.
  • the groove 220 may be extended downward until the base substrate 211 is exposed, that is, a surface of the base substrate 211 is exposed through the groove 220 .
  • the present disclosure does not limit a planar shape of the groove 200 in a direction parallel to the base substrate 211 .
  • the shape includes a circle, a triangle, a rectangle, an oval, a T-shape, a strip, and a zigzag, or other shapes defined by structures of the peripheral devices.
  • a length direction of the groove 220 is parallel to a bending axis (not shown) of the array substrate 200 , so that when the array substrate 200 is bent along the bending axis, the bending resistance of the array substrate 200 can be improved.
  • the grooves 220 are distributed around the second transistor 120 with respect to a plane where the base substrate is located.
  • the grooves 220 are distributed around a second gate electrode 121 of the second transistor 120 , that is, each of the four sides of the second gate electrode 121 is distributed with at least a portion of the grooves 220 second gate electrode.
  • the grooves 220 are provided on at least two sides of the second gate electrode 121 .
  • An extending direction of the groove 220 and an extending direction of the second gate electrode 121 are parallel to each other.
  • the second transistor 120 is used as a driving transistor of the pixel unit.
  • the driving transistor occupies a relatively large area in the pixel unit, and its performance has a more important impact on the display effect compared with the switching transistor. Therefore, it is also very important to maintain a stability of the performance of the driving transistor.
  • the above-mentioned arrangement is able to effectively protect the second transistor 120 from being easily damaged by external force or bending.
  • At least a portion of the grooves 220 may be further disposed between the first transistor 110 and the second transistor 120 .
  • at least a portion of the grooves 220 can be disposed between a first active layer 112 of the first transistor 110 and a second active layer 122 of the second transistor 120 .
  • at least a portion of the grooves 220 can be disposed between the first gate electrode 111 of the first transistor 110 and the second gate electrode 121 of the second transistor 120 .
  • the first conductive pattern layer 213 includes a gate line 71 or a portion of the gate line 71 configured for the display pixel area 210 .
  • the gate line 71 is provided on a side of the second insulating layer 214 away from the base substrate 211 . Therefore, a provision of the grooves 220 is not restricted by the gate line 71 , and a position for providing the grooves 220 can be more flexible and an area of providing the grooves 220 can be larger.
  • the first insulating layer 212 and the second insulating layer 214 are sequentially laminated between the base substrate 211 and the first conductive layer 213 .
  • the arrangement may be laid out according to a specific array substrate structure, and not limited to a specific insulating layer structure.
  • the second insulating layer 214 is an organic insulating layer closest to the base substrate 211 .
  • this arrangement enables all the insulating materials corresponding to the position of the groove 220 in the direction perpendicular to the base substrate 211 to be organic insulating materials. Therefore, the impact resistance and bending resistance of the array substrate 200 can be improved.
  • the grooves 220 include a first portion 221 which is parallel to the gate line 71 (as in FIG. 2 ) or overlaps the gate line 71 in a direction perpendicular to the base substrate 211 .
  • a length direction of the first portion 221 is parallel to an extension direction of the gate line.
  • the extension of the pattern in the present disclosure is not limited to extending along a straight line, but may be also extending along a curve, such as a serpentine extension.
  • the gate electrode layer 250 includes the first gate electrode 111 of the first transistor 110 .
  • the gate electrode layer 250 further includes the second gate electrode 121 of the second transistor 120 .
  • the semiconductor layer 240 is located on a side of the gate electrode layer 250 close to the base substrate 211 and includes a first active layer 112 of the first transistor 110 and a second active layer 122 of the second transistor 120 .
  • the grooves 220 further include a third portion 223 .
  • the third portion 223 is parallel to and corresponding to the second gate electrode 121 of the second transistor.
  • a length of the third portion 223 is greater than a length of the second gate electrode 121 , so as to effectively protect the second transistor 120 which severs as a pixel driving transistor.
  • the third portion 223 of the grooves is disposed to have a length greater than the length of the second gate electrode 121 in the first direction D 1 , that is, greater than a length of the channel region of the second transistor 120 , which can effectively protect the channel region.
  • different portions of the grooves 220 may have different depths and may be flexibly designed according to the actual available space, which is not limited in the embodiments of the present disclosure.
  • the grooves 220 may form a square shape around the second gate electrode 121 . Due to the existence of the semiconductor layer 240 , the grooves 220 may have a shallow depth at a position overlapping the semiconductor layer 240 (relative to the base substrate). For example, the grooves 220 penetrate in the longitudinal direction until the surface of the semiconductor layer 240 so as to avoid damages to the semiconductor layer 240 .
  • each transistor in each pixel can be similarly arranged.
  • the above grooves are correspondingly provided around the gate electrode of each transistor.
  • the gate electrode layer 250 is on a side of the second insulating layer 214 close to the base substrate 211 .
  • the first gate electrode 111 of the first transistor 110 is electrically connected to the gate line 71 through a first via 241 in the second insulating layer 214 .
  • the gate electrode layer 250 may also be located between the first insulating layer 212 and the second insulating layer 214 .
  • the first insulating layer 212 serves as a gate insulating layer of the first transistor 110 and the second transistor 120 .
  • the embodiments of the present disclosure are not limited thereto.
  • a material of the gate electrode layer 250 may include gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W), and alloy materials composed of the above metals, or conductive metal oxide materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), zinc aluminum oxide (AZO), and the like.
  • a material of the semiconductor layer 240 includes, but is not limited to, silicon-based materials (amorphous silicon a-Si, poly-silicon p-Si, etc.), metal oxide semiconductors (IGZO, ZnO, AZO, IZTO, etc.), and organic materials (hexathiophene, polythiophene, etc.).
  • the first transistor 110 and the second transistor 120 are both top-gate structures. In other embodiments, the first transistor 110 and the second transistor 120 may also be bottom-gate structures.
  • the first transistor 110 is a top-gate structure
  • the second transistor 120 is a bottom-gate structure.
  • the top-gate type of transistor has a smaller parasitic capacitance so that it can have a higher turn-on speed; and the bottom-gate type of transistor has a larger on-state current and a higher electrical stability performance, thereby having a stronger driving ability.
  • the first transistor 110 and the second transistor 120 are thin film transistors. The embodiments of the present disclosure do not limit the specific structures or types of the first transistor 110 and the second transistor 120 .
  • the first transistor 110 includes a first source electrode 113 and a first drain electrode 114 .
  • the first source electrode 113 or the first drain electrode 114 is electrically connected to the second gate electrode 121 of the second transistor 120 .
  • the first source electrode 113 and the first drain electrode 114 and the data line 61 are disposed in a same layer and are made of a same material, and thus can be manufactured through a same patterning process.
  • the first source electrode 113 or the first drain electrode 114 is electrically connected to the data line 61 to receive a data signal for emitting light.
  • the first source electrode 113 and the first drain electrode 114 of which is not electrically connected to the second gate electrode 121 of the second transistor 120 , is electrically connected to the data line 61 .
  • the grooves 220 may further include a second portion 222 that is parallel to the data line 61 or overlaps the data line in a direction perpendicular to the base substrate 211 .
  • a length direction of the second portion 222 is parallel to an extending direction of the data line 61 (as shown in FIG. 2 ).
  • the array substrate 200 may further include a gate connection electrode 72 .
  • the gate connection electrode 72 is located between the gate electrode layer 250 and the first conductive pattern layer 213 for connecting the first gate electrode 111 and the gate line 71 .
  • the conductive material filled in the via hole is likely to be wrinkled or fracture (especially in a bending state), resulting in excessive contact resistance or poor contact.
  • the gate connection electrode 72 may be provided in a same layer and formed of a same material as any one conductive layer between the gate electrode layer 250 and the first conductive pattern layer 213 , and thus may be obtained through a same patterning process as the conductive layer.
  • the gate connection electrode 72 is located between the second insulating layer 214 and the first conductive pattern layer 213 .
  • the array substrate further includes a third insulating layer 216 disposed between the gate connection electrode 72 and the first conductive pattern layer 213 .
  • the gate connection electrode 72 is electrically connected to the first gate electrode 111 through the first via hole 241 in the second insulating layer 214 , and is electrically connected to the gate line 71 through a second via hole 261 in the third insulating layer 216 , thereby electrically connecting the gate line 71 and the first gate electrode 111 .
  • the gate connection electrode 72 is provided in a same layer and formed of a same material as the first source electrode 113 and the first drain electrode 114 of the first transistor 110 , and thus may be obtained through a same patterning process as the first source electrode 113 and the first drain electrode 114 .
  • the third insulating layer 216 is located between the first conductive pattern layer 213 and the second source electrode 123 as well as the second drain electrode 124 .
  • the second transistor 120 further includes a second source electrode 123 and a second drain electrode 124 .
  • the second source electrode 123 and the second drain electrode 124 are located between the second insulating layer 214 and the first conductive pattern layer 213 .
  • the second source electrode 123 , the second drain electrode 124 , the first source electrode 113 and the first drain electrode 114 are all disposed in a same layer and formed of a same material, and thus may be obtained through a same patterning process.
  • the light emitting element 300 includes a first electrode 301 , a light emitting layer 302 , and a second electrode 303 .
  • the first electrode 301 is a pixel electrode
  • the second electrode 303 is a common electrode.
  • One of the first electrode 301 and the second electrode 303 is an anode, and the other is a cathode.
  • the light emitting element 300 may include at least one selected from the group consisting of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer and the like in addition to the light emitting layer 302 .
  • the second source electrode 123 or the second drain electrode 124 of the second transistor 120 is electrically connected to the first electrode 301 (pixel electrode) of the light emitting element 300 .
  • the light emitting element 300 is located on a side of the first conductive pattern layer 213 away from the base substrate 211 .
  • the array substrate 200 further includes a fourth insulating layer 218 located on the first conductive pattern layer 213 , and the light-emitting element 300 is formed on the fourth insulating layer 218 .
  • the second source electrode 123 or the second drain electrode 124 of the second transistor 120 is electrically connected to the first electrode 301 of the light emitting element 300 through a third via hole 281 in the fourth insulating layer 218 .
  • the array substrate 200 further includes a driving connection electrode 230 .
  • the driving connection electrode 230 is located between the second source electrode 123 (or the second drain electrode 124 ) of the second transistor 120 and the pixel electrode of the light emitting element 300 .
  • the driving connection electrode 230 connects the second source electrode 123 (or the second drain electrode 124 ) of second transistor 120 and the pixel electrode of the light emitting element 300 .
  • the driving connection electrode 230 may also increase the pixel distribution density of the array substrate 200 and reduce resistance between the second transistor 120 and the pixel electrode.
  • the driving connection electrode 230 and the groove 220 are overlapped in the direction perpendicular to the base substrate 221 .
  • the driving connection electrode 230 is provided in a same layer and formed of a same material as the gate line 71 , and thus may be obtained through a same patterning process as the gate line; that is, the first conductive pattern layer 213 further includes the driving connection electrode 230 .
  • the driving connection electrode 230 is electrically connected to the second source electrode 123 or the second drain electrode 124 of the second transistor 120 through a fourth via hole 264 in the third insulating layer 216 , and is electrically connected to the first electrode 301 of the light emitting element 300 through the third via 281 .
  • the light emitting element 300 may be a top emission, a bottom emission, or a double emission structure.
  • the first electrode 301 is reflective and the second electrode 303 is transmissive or semi-transmissive.
  • the first electrode 301 is of a transparent conductive oxide material such as indium tin oxide (ITO).
  • the first electrode 301 is of a material with a high work function to serve as an anode, such as an ITO/Ag/ITO laminated structure.
  • the second electrode 303 is of a material with a low work function to serve as a cathode, such as a semi-transmissive metal or metal alloy material, such as an Ag/Mg alloy material.
  • the third insulating layer 216 and the fourth insulating layer 218 are planarization layers.
  • the third insulating layer 216 and the fourth insulating layer 218 are both organic materials, such as resin like polyimide (PI).
  • the array substrate 200 further includes a storage capacitor Cst, for example, for storing a data signal during the operation of the pixel circuit.
  • the way of setting and connecting the storage capacitor can be adjusted according to the specific pixel circuit structure.
  • a first capacitor electrode 411 of the storage capacitor is disposed between the first insulating layer 212 and the second insulating layer 214 in the direction perpendicular to the base substrate.
  • a second capacitor electrode 412 is provided in a same layer and formed of a same material as the first gate electrode 111 of the first transistor 110 and therefore can be obtained through a same patterning process as the first gate electrode 111 .
  • the first capacitor electrode 411 and the second capacitor electrode 412 are facing each other to form the storage capacitor Cst.
  • the grooves 220 is disposed between the second transistor 120 and the storage capacitor Cst with respect to a plane where the base substrate is located.
  • the array substrate 200 further includes a pixel defining layer 215 disposed on the first electrode 301 of the light emitting element 300 so as to space apart light emitting layers of adjacent light emitting elements, thereby preventing cross-color during the display operation.
  • An opening is formed in the pixel defining layer 215 at a position corresponding to the first electrode 301 to at least partially expose the first electrode 301 , and the light emitting layer 302 is formed in the opening.
  • the second electrode 303 is formed on the light emitting layer 302 and the pixel defining layer.
  • the pixel defining layer 215 is an organic material like resin or an inorganic material like silicon oxide.
  • the array substrate 200 further includes a spacer layer 217 disposed on the pixel defining layer 215 .
  • the spacer layer 217 is used to support the evaporation mask when the organic light emitting layer 302 is formed by evaporation, so as to space the pixel defining layer 215 apart from the evaporation mask to protect the pixel defining layer 215 .
  • the spacer layer 217 may further isolate adjacent organic light emitting layers.
  • the spacer layer 217 generally includes a plurality of spacers, and a shape of the spacer is generally rectangular, cylindrical, spherical, hemispherical, and is not limited thereto.
  • the array substrate 200 further includes a protective layer 219 disposed on the second electrode 303 .
  • the protective layer 219 is, for example, an inorganic protective layer or an organic protective layer, or a stack of an inorganic protective layer and an organic protective layer.
  • the protective layer 219 may further include a reductive material and/or a hygroscopic material to avoid the adverse effect of oxygen/water vapor on the light emitting element 300 .
  • the array substrate 200 further includes a gate insulating layer 207 disposed between the gate electrode layer 250 and the semiconductor layer 240 .
  • a material of the gate insulating layer 207 is an oxide of silicon, a nitride of silicon, or an oxynitride of silicon.
  • the groove 220 further penetrates the gate insulating layer 207 to expose the base substrate 211 .
  • the array substrate 200 further includes a buffer layer (not shown) disposed between the base substrate 211 and the semiconductor layer 240 .
  • the buffer layer is used to planarize the surface of the base substrate 211 , and prevent harmful impurities in the base substrate 211 from entering the pixel circuit.
  • the grooves 220 may expose the buffer layer without penetrating the buffer layer to expose the base substrate.
  • the array substrate 200 is a flexible array substrate.
  • the base substrate 211 is an organic flexible material, such as polyimide (PI), polyethylene terephthalate (PET), polycarbonate, polyethylene, polyacrylate, polyetherimide, polyethersulfone, etc.
  • some embodiments of the present disclosure further provide a display panel 20 including the above-mentioned array substrate 200 .
  • the display panel is an OLED display panel, and accordingly, the array substrate included therein is an OLED array substrate, and the light-emitting element included in the pixel unit is an OLED.
  • the display panel further includes an encapsulation layer 501 and a cover plate 502 disposed on the array substrate 200 .
  • the packaging layer 501 is configured to seal the light-emitting element 300 to prevent external moisture and oxygen from penetrating into the light-emitting element and the pixel circuit and causing damage to the device.
  • the encapsulation layer 501 includes an organic thin film or a structure in which an organic thin film and an inorganic thin film are alternately laminated.
  • a water-absorbing layer (not shown) may be further provided between the encapsulation layer 501 and the array substrate 200 .
  • the water-absorbing layer is configured to absorb water vapor or colloidal sol remaining in the light-emitting element 300 in the previous manufacturing process.
  • the cover plate 502 is, for example, a glass cover plate.
  • the cover plate 502 and the packaging layer 501 may be in an integrated structure.
  • the display panel 20 is a liquid crystal display panel.
  • the display panel 20 further includes a color filter substrate opposite to the array substrate and a liquid crystal layer disposed between the array substrate and the color filter substrate.
  • Some embodiments of the present disclosure also provide a display device including the above-mentioned array substrate or display panel.
  • the display device may be, for example, a liquid crystal display device, an OLED display device or an electronic paper, a digital photo frame, a smart bracelet, a smart watch, a mobile phone, a tablet computer, a display, a notebook computer, a navigator, or other products or components having any display function.
  • Some embodiments of the present disclosure also provide a method for manufacturing an array substrate, the array substrate including a display pixel area for providing pixel units arranged in an array.
  • the manufacturing method includes: providing a base substrate; forming a first insulating layer on the base substrate, and forming grooves in the first insulating layer, the grooves being formed in the display pixel area; forming a second insulating layer on the first insulating layer, and the second insulating layer is further filled into the grooves; and forming a first conductive pattern layer on the second insulating layer.
  • FIG. 5 is a flowchart of a method for manufacturing an array substrate according to an embodiment of the present disclosure.
  • the manufacturing method of the array substrate provided by the embodiment of the present disclosure will be exemplarily described below with reference to FIG. 1 , FIG. 3 and FIG. 5 .
  • the manufacturing method of forming the array substrate includes at least steps S 51 to S 53 .
  • Step S 51 providing a base substrate, forming a first insulating layer on the base substrate, and forming grooves in the first insulating layer, the grooves being formed in the display pixel area;
  • Step S 52 forming a second insulating layer on the first insulating layer, wherein the second insulating layer is further filled into the grooves;
  • Step S 53 forming a first conductive pattern layer on the second insulating layer.
  • a base substrate 211 is provided first, and then a first insulating layer 212 is formed on the base substrate 211 and grooves 220 are formed in the first insulating layer 212 .
  • the semiconductor layer 240 , the gate insulating layer 207 , and the gate electrode layer 250 are sequentially formed on the base substrate 211 .
  • the base substrate 211 is an organic flexible material, such as polyimide (PI), polyethylene terephthalate (PET), polycarbonate, polyethylene, polyacrylate, polyetherimide, polyethersulfone, etc.
  • PI polyimide
  • PET polyethylene terephthalate
  • PC polycarbonate
  • polyethylene polyethylene
  • polyacrylate polyetherimide
  • polyethersulfone etc.
  • forming the gate electrode layer includes forming a first conductive layer and performing a patterning process on the conductive layer to form a first gate electrode 111 of the first transistor 110 and a second gate electrode 121 of the second transistor 120 .
  • the material of the first conductive layer is a metal material, such as copper, aluminum, magnesium, molybdenum, chromium, and alloys of the above metals.
  • forming the grooves 220 include etching the first insulating layer 212 .
  • the grooves 220 do not overlap with the semiconductor layer 240 or the gate electrode layer 250 in a direction perpendicular to the base substrate 211 .
  • the grooves 220 also penetrate the gate insulating layer 207 to expose the base substrate 211 .
  • the first insulating layer 212 may be an organic insulating material, such as a resin material like polyimide. It may also be an inorganic insulating material, such as an oxide of silicon, silicon nitride or silicon oxynitride or metal oxide insulation.
  • the material of the second insulating layer 212 is an organic insulating material, such as at least one of polymethyl methacrylate, polycarbonate, polystyrene, epoxy resin, polyimide and polyethylene.
  • the method for forming the second insulating layer 212 includes spin coating or ink-jet printing.
  • the method of forming the second insulating layer 212 further includes curing.
  • An organic insulating material has a better flexibility than an inorganic insulating material, so that the impact resistance and bending resistance of the array substrate 200 can be further improved.
  • step S 52 further includes etching the second insulating layer 214 to form a first via hole 241 and source and drain contact holes of the first transistors 110 and second transistors 120 .
  • the first via 241 also penetrates the first insulating layer 212 to expose at least a portion of the gate electrode layer 250 .
  • the source and drain contact holes further penetrate the first insulating layer 212 and the gate insulating layer 207 to expose at least a portion of the semiconductor layer 240 respectively.
  • the step further includes sequentially forming a second conductive layer and a third insulating layer 216 on the second insulating layer 214 before forming the first conductive pattern layer 213 .
  • a patterning process is performed on the second conductive layer to form a first source electrode 113 and a first drain electrode 114 of the first transistor 110 , and a second source electrode 123 and a second drain electrode 124 of the second transistor 120 .
  • performing a patterning process on the second conductive layer further forms a gate connection electrode 72 and a data line 61 .
  • the gate connection electrode 72 is electrically connected to the first gate electrode 111 through the first via hole 241 .
  • the first source electrode 113 and the first drain electrode 114 of the first transistor 110 are in contact with the first active layer 112 through source and drain contact holes to form electrical connections.
  • the second source electrode 123 and the second drain electrode 124 of the second transistor 120 are in contact with the second active layer 122 through source and drain contact holes to form electrical connections.
  • step S 53 further includes performing a patterning process on the third insulating layer 216 to form a second via hole 261 and a fourth via hole 262 .
  • the second via 261 hole exposes at least a portion of the gate connection electrode 72
  • the fourth via hole 262 exposes at least a portion of the second source electrode 123 or the second drain electrode 124 of the second transistor 120 .
  • forming the first conductive pattern layer 213 includes forming a third conductive layer and performing a patterning process on the third conductive layer to form a gate line 71 and a driving connection electrode 230 .
  • the gate line 71 is electrically connected to the gate connection electrode 72 through the second via hole 261 .
  • the driving connection electrode 230 is electrically connected to the second source electrode 123 or the second drain electrode 124 of the second transistor 120 through the fourth via hole 262 .
  • the method for manufacturing the array substrate further includes forming a light emitting element 300 on the first conductive pattern layer 213 , and forming the light emitting element 300 includes sequentially forming a first electrode 301 , a light emitting layer 302 , and a second electrode 303 .
  • the first electrode 301 is electrically connected to the driving connection electrode 230 .
  • the method for manufacturing the array substrate further includes forming a fourth insulating layer 218 , a pixel defining layer 215 , a spacer layer 217 , and a protective layer 219 , which will not be repeated herein.
  • the material of the conductive layer may include gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W), and alloy materials composed of the above metals, or conductive metal oxide materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), zinc aluminum oxide (AZO), and the like.
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