US20210193909A1 - Method of manufacturing ultrasonic sensors - Google Patents

Method of manufacturing ultrasonic sensors Download PDF

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Publication number
US20210193909A1
US20210193909A1 US17/270,425 US201917270425A US2021193909A1 US 20210193909 A1 US20210193909 A1 US 20210193909A1 US 201917270425 A US201917270425 A US 201917270425A US 2021193909 A1 US2021193909 A1 US 2021193909A1
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US
United States
Prior art keywords
piezoelectric
sintering
piezoelectric material
unit
ultrasonic sensors
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Pending
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US17/270,425
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English (en)
Inventor
Young Kyu Kim
Kyung Ok PARK
Seung Jin Lee
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Btbl Co Ltd
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Btbl Co Ltd
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Assigned to BTBL CO., LTD reassignment BTBL CO., LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, YOUNG KYU, LEE, SEUNG JIN, PARK, KYUNG OK
Publication of US20210193909A1 publication Critical patent/US20210193909A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • B06B1/0629—Square array
    • H01L41/43—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H01L41/0477—
    • H01L41/09—
    • H01L41/332—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/084—Shaping or machining of piezoelectric or electrostrictive bodies by moulding or extrusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials

Definitions

  • FIG. 2 is a cross-sectional view illustrating concave portions and convex portions of a micropattern formed on a substrate.
  • FIG. 5 conceptually illustrates the shape of particles of a unit piezoelectric body after re-sintering in accordance with a method of the present invention.
  • FIG. 9 is a scanning electron microscopy image of a preliminary piezoelectric body after sintering, which was formed in Comparative Example 1.
  • FIG. 13 shows the impedance values of an ultrasonic sensor manufactured in Example 2.
  • a method of manufacturing ultrasonic sensors includes forming a micropattern having concave and convex portions on an etchable substrate (S 1 ), filling a piezoelectric material in the concave portions of the micropattern (S 2 ), pressurizing the filled piezoelectric material (S 3 ), sintering the piezoelectric material to form preliminary piezoelectric bodies (S 4 ), re-sintering the preliminary piezoelectric bodies to form densely packed unit piezoelectric bodies (S 5 ), and forming electrode terminals at both ends of each of the unit piezoelectric bodies to produce a unit piezoelectric cell (S 6 ).
  • the kinds of the solvent and the binder are not particularly limited so long as high concentrations of the solvent and the binder can be homogeneously mixed with the piezoelectric material powder.
  • the piezoelectric material 300 is sintered to form preliminary piezoelectric bodies 300 ′.
  • the re-sintering is performed at a temperature where the surfaces of the preliminary piezoelectric bodies are melted. Specifically, in S 5 , thermal energy is applied in an amount to melt only the surfaces of the preliminary piezoelectric bodies without changing the phase of the particles of the preliminary piezoelectric bodies to a liquid phase. The volume of the particles of the preliminary piezoelectric bodies increases after coagulation.
  • An external circuit or module is connected to the electrode terminals formed at the ends of the re-sintered unit piezoelectric bodies 300 ′′ to drive the ultrasonic sensors 200 .
  • Electrode terminals E 1 and E 2 Any material that is highly electrically conductive and has low resistance may be used without limitation for the electrode terminals E 1 and E 2 .
  • An electrically conductive metal such as silver, copper or aluminum may be used as a material for the electrode terminals E 1 and E 2 .
  • the electrode terminals may be stacked by screen printing a paste of the electrically conductive material powder according to a designed pattern of terminal wire electrodes (not illustrated), followed by molding and curing the paste.
  • the paste is prepared by mixing the electrically conductive material powder with a binder.
  • the substrate 100 can be removed by a photolithography process.
  • An insulating dielectric material 400 may be filled in a space between the unit piezoelectric bodies to minimize interference between the unit piezoelectric bodies when a voltage is applied and an ultrasonic wave is transmitted and received.
  • the insulating material is preferably a polymer resin.
  • a micropattern with a line width of 50 ⁇ m was formed on a silicon wafer by a photolithography process.
  • the substrate was removed by a photolithography process, an epoxy insulating material was filled, gold metal was deposited, wire electrodes were patterned by a photolithography process, and diced into ultrasonic sensors.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
US17/270,425 2018-08-24 2019-01-22 Method of manufacturing ultrasonic sensors Pending US20210193909A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2018-0099287 2018-08-24
KR1020180099287A KR101965171B1 (ko) 2018-08-24 2018-08-24 초음파센서의 제조방법
PCT/KR2019/000931 WO2020040376A1 (en) 2018-08-24 2019-01-22 Method of manufacturing ultrasonic sensors

Publications (1)

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US20210193909A1 true US20210193909A1 (en) 2021-06-24

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US17/270,425 Pending US20210193909A1 (en) 2018-08-24 2019-01-22 Method of manufacturing ultrasonic sensors

Country Status (6)

Country Link
US (1) US20210193909A1 (de)
EP (1) EP3841622A4 (de)
JP (1) JP7285590B2 (de)
KR (1) KR101965171B1 (de)
CN (1) CN113016085A (de)
WO (1) WO2020040376A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112671367A (zh) * 2020-12-24 2021-04-16 华南理工大学 一种新型fbar滤波器及其制备方法

Citations (4)

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JPS6087000A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd 超音波探触子
US20070090729A1 (en) * 2005-10-25 2007-04-26 Ngk Insulators, Ltd. Piezoelectric/electrostrictive film and method for producing the same
US20120169183A1 (en) * 2010-12-30 2012-07-05 Samsung Electro-Mechanics Co., Ltd. Ceramic composition for piezoelectric actuator and method of manufacturing the same, and piezoelectric actuator manufactured by using the same
US20140239774A1 (en) * 2012-12-17 2014-08-28 Virginia Tech Intellectual Properties, Inc. NEW PROCESSING METHOD FOR GRAIN-ORIENTED LEAD-FREE PIEZOELECTRIC Na0.5Bi0.5TiO3-BaTiO3 CERAMICS EXHIBITING GIANT PERFORMANCE

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JP4065049B2 (ja) * 1998-03-19 2008-03-19 オリンパス株式会社 圧電セラミクス構造体の製造方法及び複合圧電振動子の製造方法
JP2002012425A (ja) * 2000-06-21 2002-01-15 Tokai Rubber Ind Ltd Ｐｚｔ薄膜の製法およびそれにより得られたｐｚｔ構造体
JP2006261656A (ja) * 2005-02-21 2006-09-28 Brother Ind Ltd 圧電アクチュエータおよびその製造方法
JP5967988B2 (ja) * 2012-03-14 2016-08-10 キヤノン株式会社 圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置
DE102013200243A1 (de) * 2013-01-10 2014-07-10 Robert Bosch Gmbh Piezoelektrisches Bauteil und Verfahren zur Herstellung eines piezoelektrischen Bauteils
CN103779272B (zh) * 2013-01-11 2017-06-20 北京纳米能源与系统研究所 晶体管阵列及其制备方法
KR20150110126A (ko) * 2014-03-24 2015-10-02 삼성전기주식회사 압전소자 및 이를 포함하는 압전진동자
JP6122066B2 (ja) * 2015-06-24 2017-04-26 国立大学法人 熊本大学 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ
TWM534791U (zh) 2016-07-20 2017-01-01 伍鐌科技股份有限公司 防震裝置及防震裝置包裝體
KR102091701B1 (ko) * 2016-12-02 2020-03-20 한국기계연구원 손가락 생체정보 인식모듈과, 이것이 적용된 전자기기, 그리고 손가락 생체정보 인식모듈의 제조방법과 트랜스듀서의 제조방법
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JPS6087000A (ja) * 1983-10-19 1985-05-16 Hitachi Ltd 超音波探触子
US20070090729A1 (en) * 2005-10-25 2007-04-26 Ngk Insulators, Ltd. Piezoelectric/electrostrictive film and method for producing the same
US20120169183A1 (en) * 2010-12-30 2012-07-05 Samsung Electro-Mechanics Co., Ltd. Ceramic composition for piezoelectric actuator and method of manufacturing the same, and piezoelectric actuator manufactured by using the same
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Also Published As

Publication number Publication date
JP2021535699A (ja) 2021-12-16
KR101965171B1 (ko) 2019-08-13
JP7285590B2 (ja) 2023-06-02
EP3841622A4 (de) 2022-06-08
WO2020040376A1 (en) 2020-02-27
EP3841622A1 (de) 2021-06-30
CN113016085A (zh) 2021-06-22

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