US20200035953A1 - Display panel and method for manufacturing the same - Google Patents

Display panel and method for manufacturing the same Download PDF

Info

Publication number
US20200035953A1
US20200035953A1 US16/393,879 US201916393879A US2020035953A1 US 20200035953 A1 US20200035953 A1 US 20200035953A1 US 201916393879 A US201916393879 A US 201916393879A US 2020035953 A1 US2020035953 A1 US 2020035953A1
Authority
US
United States
Prior art keywords
layer
mask
electrode layer
base substrate
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/393,879
Other languages
English (en)
Inventor
Zhuo Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Assigned to BOE TECHNOLOGY GROUP CO., LTD. reassignment BOE TECHNOLOGY GROUP CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, ZHUO
Publication of US20200035953A1 publication Critical patent/US20200035953A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621Providing a shape to conductive layers, e.g. patterning or selective deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/854Arrangements for extracting light from the devices comprising scattering means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8052Cathodes
    • H10K59/80521Cathodes characterised by their shape
    • H01L51/5268
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H01L51/0023
    • H01L51/502
    • H01L51/5056
    • H01L51/5072
    • H01L51/5088
    • H01L51/5218
    • H01L51/5225
    • H01L51/5234
    • H01L51/56
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/818Reflective anodes, e.g. ITO combined with thick metallic layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/822Cathodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/828Transparent cathodes, e.g. comprising thin metal layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L2251/308
    • H01L2251/5315
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0016Processes relating to electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission

Definitions

  • the present disclosure relates to the field of display technologies, and more particularly to a display panel and a method for manufacturing the display panel.
  • QLED Quantum Dot Light Emitting Diode
  • stability and luminous efficiency of quantum dots increase continuously.
  • the QLED display apparatuses have become more and more important in the display field.
  • micro cavities will be adjusted in a narrow efficient range due to narrow spectrum of quantum dots. It often may cause luminous energy loss of quantum dot light emitting diodes to degrade quality of the QLED display apparatuses.
  • Embodiments of the present disclosure provide a display panel including: a base substrate; a first electrode layer on a side of the base substrate; a light emitting layer on a side of the first electrode layer facing away from the base substrate; and a second electrode layer on a side of the light emitting layer facing away from the first electrode layer, wherein the second electrode layer has a first surface which is a roughened surface.
  • the first surface is located on a side of the second electrode layer facing away from the light emitting layer.
  • a plurality of protrusions are distributed on the first surface.
  • the light emitting layer is a quantum dot layer.
  • the display panel further includes: a second transport layer between the second electrode layer and the light emitting layer, the second transport layer having a second surface which is a roughened surface.
  • the second surface is located on a side of the second transport layer facing towards the second electrode layer or on another side of the second transport layer facing towards the light emitting layer.
  • the display panel further includes: a first transport layer on a side of the light emitting layer facing towards the first electrode layer; and a first injection layer on a side of the first transport layer facing towards the first electrode layer, wherein at least one of the first transport layer and the first injection layer has a third surface which is a roughened surface.
  • the third surface is a surface of the at least one of the first transport layer and the first injection layer facing towards the second electrode layer, or a surface of the at least one of the first transport layer and the first injection layer facing towards the base substrate.
  • the first transport layer is a hole transport layer and the first injection layer is a hole injection layer.
  • the second electrode layer is an indium tin oxide layer or an indium zinc oxide layer.
  • Embodiments of the present disclosure provide a method for manufacturing a display panel, the method including: arranging a first mask on a side of a base substrate, the first mask comprising a first transmission portion and a first shielding portion; arranging a second mask on a side of the first mask facing away from the base substrate and locating an orthographic projection of a pattern of the second mask onto the first mask within the first transmission portion of the first mask; and forming a second electrode layer with a roughened surface of the display panel in a region of the base substrate exposed from the first transmission portion of the first mask, by means of sputtering through the second mask.
  • the arranging the first mask on the side of the base substrate comprises: keeping the first mask in contact with the base substrate.
  • the arranging the second mask on the side of the first mask facing away from the base substrate and locating the orthographic projection of the pattern of the second mask onto the first mask within the first transmission portion of the first mask comprises: keeping a gap between the first mask and the second mask.
  • the second mask comprises: a second shielding portion; and a plurality of second transmission portions separated from one another by the second shielding portion.
  • the method before arranging the first mask on the side of the base substrate, the method further comprises: forming a first electrode layer on the base substrate; forming a light emitting layer on the first electrode layer; and forming a second transmission layer on the light emitting layer.
  • the method further comprises: forming a first injection layer and a first transport layer in sequence on the first electrode layer.
  • FIG. 1 is a schematic view showing a structure of a display panel in accordance with embodiments of the present disclosure
  • FIG. 2 is a schematic view showing a structure of a second electrode layer shown in FIG. 1 ;
  • FIG. 3 schematically illustrates structures obtained in steps of a method for manufacturing a display panel in accordance with embodiments of the present disclosure
  • FIG. 4 is a front view of a first mask shown in FIG. 3 ;
  • FIG. 5 is a flow chart of a method for manufacturing a display panel in accordance with embodiments of the present disclosure
  • FIG. 6 is a schematic view showing a structure of another display panel in accordance with embodiments of the present disclosure.
  • FIG. 7 is a schematic view showing a structure of a further display panel in accordance with embodiments of the present disclosure.
  • FIG. 8A and FIG. 8B show examples of a first transport layer or a first injection layer having a third surface.
  • the display panel includes: a base substrate 1 , a first electrode layer 2 , a light emitting layer 3 and a second electrode layer 4 .
  • the first electrode layer 2 may be arranged on a side of the base substrate 1 (in FIG. 1 , it is the upper side of the base substrate 1 ).
  • the light emitting layer 3 may be arranged on a side of the first electrode layer 2 facing away from the base substrate 1 (in FIG. 1 , it is the upper side of the first electrode layer 2 ).
  • the second electrode layer 4 may be arranged on a side of the light emitting layer 3 facing away from the first electrode layer 2 (in FIG. 1 , it is the upper side of the light emitting layer 3 ).
  • the second electrode layer 4 has a first surface 11 which is a roughened surface.
  • the term “roughened surface” means a surface that is not smooth and has a height difference between the highest point and the lowest point on the surface greater than a predetermined threshold.
  • the roughened surface may be provided with a plurality of protrusions 111 thereon, as shown in FIG. 1 .
  • Regular or irregular patterns in a form of such as recesses or grains may be formed on the roughened surface.
  • the above predetermined threshold may for example be greater than or equal to 50 nanometers, such as in a range between 50 nanometers and 100 micrometers, even several millimeters.
  • the base substrate 1 is used to provide a fundamental support for the display panel and may carry other functional layers in the display panel.
  • the base substrate 1 may be a glass substrate.
  • the first electrode layer 2 may be formed on a side of the glass substrate. In practical operation of the display panel, the first electrode layer 2 may be electrically connected to an anode of a power supply and used as an anode layer.
  • the first electrode layer 2 may be a metal electrode film. The metal electrode film not only can be used as the anode of the power supply, but also can reflect a light.
  • the light emitting layer 3 may be formed on a side of the first electrode layer 2 facing away from the base substrate 1 .
  • the light emitting layer 3 may be made from luminescent materials.
  • the light emitting layer 3 may be made from quantum dot materials.
  • the quantum dot is a semiconductor in order of nanometer. The quantum dot may emit a light with a special frequency when it is applied by a certain electrical field or light pressure, so as to be used as a light source of the display panel.
  • the second electrode layer 4 is formed on a side of the light emitting layer 3 facing away from the first electrode layer 2 .
  • the second electrode layer 4 may be electrically connected to a cathode of power supply and thus be used as a cathode layer.
  • the second electrode layer 4 may be an indium tin oxide (ITO) layer or an indium zinc oxide (IZO) layer.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the light emitted from the light emitting layer 3 may be transmitted through the second electrode layer 4 to exit.
  • the second electrode layer 4 may include a transparent electrode.
  • an electrical field will be generated between the first electrode layer 2 and the second electrode layer 4 . Under the electrical field, the light emitting layer 3 can emit a light.
  • the first surface 11 of the second electrode layer 4 may be the roughened surface. When the light is irradiated on the first surface 11 , it may be reflected diffusely.
  • the first surface 11 of the second electrode layer 4 is the roughened surface, when a light beam emitted from the light emitting layer 3 enters the second electrode layer 4 , an incident angle of the light beam onto the first surface 11 can be changed such that most of the light beam emitted from the light emitting layer 3 can be transmitted through the second electrode layer 4 to exit. In this way, it can enhance luminous efficiency of the display panel to ensure quality of the display device.
  • Embodiments of the present disclosure provide a display panel having an increased luminous efficiency.
  • surfaces on both sides of an electrode layer (such as ITO layer) in a conventional display panel are planar.
  • an electrode layer such as ITO layer
  • a part of the light beam may be reflected totally within the electrode layer due to its incident angle greater than the critical angle of total reflection such that the part of the light beam cannot exit from the electrode layer. It may reduce the luminous efficiency of the display device and degrade quality of the display device.
  • the display panel provided by embodiments of the present disclosure includes: the base substrate 1 , the first electrode layer 2 , the light emitting layer 3 and the second electrode layer 4 .
  • the first electrode layer 2 is arranged on a side of the base substrate 1 .
  • the light emitting layer 3 is arranged on a side of the first electrode layer 2 facing away from the base substrate 1 .
  • the second electrode layer 4 is arranged on a side of the light emitting layer 3 facing away from the first electrode layer 2 .
  • the second electrode layer 4 has a first surface 11 which is a roughened surface.
  • the first surface 11 of the second electrode layer 4 is the roughened surface, thus when the light beam emitted from the light emitting layer 3 enters the second electrode layer 4 , an incident angle of the light beam onto the first surface 11 can be diversified (in various kinds) such that the light beam emitted from the light emitting layer 3 can be transmitted through the second electrode layer 4 to exit. In this way, it can increase luminous efficiency of the display panel to ensure quality of the display device.
  • the second electrode layer 4 When the second electrode layer 4 is produced, it is typically formed by sputtering.
  • the first surface 11 may be located on the side of the second electrode layer 4 facing away from the light emitting layer 3 .
  • the light emitting layer 3 is formed, then, the second electrode layer 4 is formed on a side of the light emitting layer 3 .
  • the second electrode 4 may be formed by sputtering through a mask.
  • the roughened surface may be formed on the side of the second electrode layer 4 facing away from the light emitting layer 3 .
  • the above light emitting layer 3 can emit a light under the effect of the electrical field.
  • the light emitting layer 3 may be a quantum dot layer.
  • the quantum dot is a semiconductor in order of nanometer.
  • the quantum dot may emit a colored light beam when it is applied by a certain electrical field or light pressure.
  • the color of the light beam depends on compositions, size and shape of the quantum dot.
  • the form of the quantum dot can be changed such that the quantum dot can emit a pure light with peak value of intensity, so as to provide a better display color. It can improve quality of the display device.
  • a second transport layer 5 is provided between the second electrode layer 4 and the light emitting layer 3 .
  • the second transport layer 5 has a second surface 12 which is a roughened surface.
  • the second transport layer 5 may be made from transparent materials such as ZnO (Zinc Oxide) nano-particles.
  • the second transport layer 5 is configured to transport electrons from the second electrode layer 4 into the light emitting layer 3 .
  • the electrons from the second electrode layer 4 meet holes in the light emitting layer 3 to achieve luminous effects.
  • the second surface 12 of the second transport layer 5 is the roughened surface, thus, when the light beam enters the second transport layer 5 , the second surface 12 will reflect the light beam diffusely such that the part of light beam cannot be reflected totally all along in the second transport layer 5 . In this way, entirety of the light beam can exit from the second transport layer 5 , so as to enhance luminous efficiency and ensure quality of the display device.
  • the second surface 12 may be located on a side of the second transport layer 5 facing towards the second electrode layer 4 (for example, as shown in FIG. 6 ) or on another side of the second transport layer facing towards the light emitting layer 3 (for example, as shown in FIG. 7 ).
  • a plurality of protrusions 121 may be provided on the second surface 12 .
  • the first electrode layer 2 may be an anode layer.
  • the first electrode layer 2 can transport holes to the light emitting layer 3 and allow the holes to meet the electrons in the light emitting layer 3 to emit a light.
  • a first transport layer for example a hole transport layer
  • a first injection layer for example a hole injection layer
  • One or more of the first transport layer 6 , the first injection layer 7 and the first electrode layer 2 has a third surface 13 which is a roughened surface. In the embodiments, the roughened surface can reflect the light beam diffusely.
  • the third surface 13 is a surface of the at least one of the first transport layer 6 , the first injection layer 7 or the first electrode layer 2 facing towards the base substrate 1 , or a surface of the first transport layer 6 or the first injection layer 7 facing towards the second electrode layer 4 .
  • FIGS. 8B show an example in which the third surface 13 is located on an upper side (first side) of the first transport layer 6 or the first injection layer 7 and another example in which the third surface 13 is located on a lower side (second side) of the first transport layer 6 or the first injection layer 7 , respectively.
  • a plurality of protrusions 131 may be provided on the third surface 13 .
  • the first transport layer 6 and the first injection layer 7 are arranged between the light emitting layer 3 and the first electrode layer 1 , instead of being arranged between the light emitting layer 3 and the second electrode layer 4 . It is helpful to prevent the process for producing the second electrode layer 4 from destroying the first transport layer 6 and the first injection layer 7 . It is in particular advantageous if the second electrode layer 4 is produced by high temperature evaporation.
  • the roughened second surface 12 and the roughened third surface 13 for example may be produced by any known processes (such as controlling parameters in a coating process to make uneven thickness of layers) or other known surface treatment processes in the art.
  • embodiments of the present disclosure also provide a method 100 for manufacturing a display panel. As illustrated in FIG. 5 , the method 100 may include:
  • the first mask 41 is arranged on a side of the base substrate 1 , so as to cover and shield some functional areas on the base substrate 1 .
  • the functional areas may include structures such as driving circuits, traces.
  • the second electrode layer 4 does not need to be formed in these functional areas, thus these functional areas may be shielded by the first mask 41 to prevent materials for producing the second electrode layer 4 from being sputtered to the functional areas when the second electrode layer 4 is formed.
  • the first mask 41 may include a first transmission portion 411 and a first shielding portion 412 .
  • the first transmission portion 411 is a portion through which a sputtering beam can pass in a sputtering process, for example, is an opening area.
  • the first transmission portion 411 cover the area on which the second electrode layer 4 may be formed, and the first shielding portion 412 is configured to shield the above functional areas to prevent the sputtering process from affecting the above functional areas.
  • the second mask 42 is arranged on a side of the first mask 41 facing away from the base substrate.
  • the second mask 42 is configured to form the second electrode layer 4 with a predetermined pattern through the first transmission portion 411 of the first mask 41 .
  • the second electrode layer 4 may be formed in the predetermined area on the base substrate 1 , to improve quality of the display panel.
  • the second mask 42 may include a second shielding portion 421 and a plurality of second transmission portions 422 separated by the second shielding portion 421 .
  • the second transmission portion 422 is a portion through which a sputtering beam can pass in a sputtering process, for example, is an opening area.
  • the plurality of second transmission portions 422 may be arranged in an array, as shown in FIG. 3 .
  • two adjacent second transmission portions 422 may have a pitch or interval between 100 micrometers and 500 micrometers.
  • a gap between the first mask 41 and the second mask 42 may be kept. The gap may for example be in a range from 1 millimeter to 20 millimeters.
  • the sputtering beam will not pass through the second transmission portion 422 of the second mask 42 straightly, but diffuses to some extent (for example, due to large incident divergence angle of the sputtering beam or the diffraction effects of the second transmission portion 422 to the sputtering beam). More materials will be sputtered at a position within the area of the base substrate 1 directly facing the second transmission portion 422 (for example, the area defined by the orthographic projection of the second transmission portion 422 on the base substrate 1 ), thus a portion of larger thickness of the second electrode layer 4 is formed at the position.
  • the second electrode layer 4 having convex-concave roughened surface may be formed in the region on the base substrate 1 exposed from the transmission portion 411 of the first mask 41 .
  • Embodiments of the present disclosure provide a method for manufacturing the display panel. It may improve luminous efficiency of the display panel. Customarily, surfaces on both sides of an electrode layer (such as ITO layer) in a conventional display panel are planar. When a light beam emitted from a light emitting layer passes through the electrode layer, a part of the light beam may be reflected totally within the electrode layer due to its incident angle greater than the critical angle of total reflection such that the part of the light beam cannot exit from the electrode layer. It may reduce the luminous efficiency of the display device and degrade quality of the display device.
  • an electrode layer such as ITO layer
  • the method for manufacturing the display panel includes: arranging a first mask on a side of a base substrate; arranging a second mask on a side of the first mask facing away from the base substrate and making an orthographic projection of a pattern of the second mask onto the first mask fall within a first transmission portion of the first mask; and by means of sputtering through the second mask, forming the second electrode layer with a roughened surface of the display panel in a region of the base substrate exposed from the first transmission portion of the first mask.
  • the first surface 11 of the second electrode layer 4 is the roughened surface, when the light beam enters the second electrode layer 4 , an incident angle of the light beam onto the first surface 11 can be diversified such that the light beam emitted from the light emitting layer 3 can be transmitted through the second electrode layer 4 to exit. In this way, it can increase luminous efficiency of the display panel to ensure quality of the display device.
  • the method may further include:
  • Step 105 of forming a light emitting layer on the first electrode layer Step 105 of forming a light emitting layer on the first electrode layer
  • Step 106 of forming a second transmission layer on the light emitting layer is Step 106 of forming a second transmission layer on the light emitting layer.
  • the method may further include:
  • a first injection layer such as a hole injection layer
  • a first transport layer such as a hole transport layer
  • the above steps 104 to 107 may be configured to form some structures of a light emitting diode, and are indicated by dashed boxes in FIG. 5 .
  • the step 101 further includes: keeping the first mask in contact with the base substrate (the base substrate 1 may include previously formed layers such as the first electrode layer 2 , the first injection layer 7 , the first transport layer 6 , the light emitting layer 3 or the second transport layer 5 ). If there is a gap between the first mask 41 and the base substrate 1 , part of the materials will be sputtered to the area of the base substrate 1 shielded by the shielding portion 412 of the first mask 41 in the sputtering process, so as to degrade quality of the display panel.
  • the base substrate 1 may include previously formed layers such as the first electrode layer 2 , the first injection layer 7 , the first transport layer 6 , the light emitting layer 3 or the second transport layer 5 . If there is a gap between the first mask 41 and the base substrate 1 , part of the materials will be sputtered to the area of the base substrate 1 shielded by the shielding portion 412 of the first mask 41 in the sputtering process, so as to degrade quality of the display panel.
  • the first mask 41 is kept in contact with the base substrate 1 such that there are no gap between the first mask 41 and the base substrate 1 . In this way, the materials will not be sputtered to the area of the base substrate 1 shielded by the shielding portion 412 of the first mask 41 . It may improve quality of the display panel.
  • the step 102 further includes: keeping a gap between the first mask and the second mask. If there are no gap between the base substrate 1 and the second mask, materials for producing the second electrode layer 4 will not be sputtered to the area of the base substrate 1 facing the second shielding portion 421 . In this way, a complete second electrode layer 4 cannot be formed in the region of the base substrate 1 exposed from the transmission portion 411 of the first mask 41 , and the second electrode layer 4 with the roughened surface will not be formed. In contrast, in the embodiments, the gap between the second mask 42 and the base substrate 1 is kept.
  • the materials for producing the second electrode layer 4 are sputtered to the base substrate 1 through the transmission portion 422 of the second mask 42 , the materials can be sputtered to the area of the base substrate 1 facing the second shielding portion 421 such that the thickness of the materials on the area of the base substrate 1 facing the second shielding portion 421 is less than the thickness of the materials on the area of the base substrate 1 facing the second transmission portion 422 , so as to form the roughened surface.
  • embodiments of the present disclosure also provide a display device including the display panel as described in any of the above embodiments.
  • the display device may also be used to enhance luminous efficiency of the display device. The details will be omitted herein.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
US16/393,879 2018-07-26 2019-04-24 Display panel and method for manufacturing the same Abandoned US20200035953A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810834313.5A CN108922984B (zh) 2018-07-26 2018-07-26 显示面板及其制备方法、显示设备
CN201810834313.5 2018-07-26

Publications (1)

Publication Number Publication Date
US20200035953A1 true US20200035953A1 (en) 2020-01-30

Family

ID=64416684

Family Applications (2)

Application Number Title Priority Date Filing Date
US16/393,879 Abandoned US20200035953A1 (en) 2018-07-26 2019-04-24 Display panel and method for manufacturing the same
US17/043,163 Active 2040-07-25 US11778855B2 (en) 2018-07-26 2019-07-26 Light-emitting diode structure, fabrication method therefor, and display panel

Family Applications After (1)

Application Number Title Priority Date Filing Date
US17/043,163 Active 2040-07-25 US11778855B2 (en) 2018-07-26 2019-07-26 Light-emitting diode structure, fabrication method therefor, and display panel

Country Status (3)

Country Link
US (2) US20200035953A1 (zh)
CN (1) CN108922984B (zh)
WO (1) WO2020020341A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11778855B2 (en) 2018-07-26 2023-10-03 Boe Technology Group Co., Ltd. Light-emitting diode structure, fabrication method therefor, and display panel

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210004748A (ko) * 2019-07-05 2021-01-13 삼성전자주식회사 발광 소자와 이를 포함한 표시 장치
CN110690353B (zh) * 2019-09-06 2021-01-15 深圳市华星光电半导体显示技术有限公司 一种串联oled器件的制备方法
CN111755490B (zh) * 2020-06-22 2022-07-29 武汉华星光电半导体显示技术有限公司 一种显示面板
CN111864120A (zh) * 2020-09-11 2020-10-30 合肥福纳科技有限公司 一种qled及其制作和提高其出光率的方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3726882B2 (ja) * 2001-01-18 2005-12-14 同和鉱業株式会社 発光ダイオードの製造方法
TWI425867B (zh) * 2010-11-19 2014-02-01 Au Optronics Corp 有機電激發光顯示元件及其製造方法
US10236460B2 (en) * 2011-07-22 2019-03-19 University Of Florida Research Foundation, Incorporated Photovoltaic cell enhancement through UVO treatment
CN103219433A (zh) * 2012-01-20 2013-07-24 泰谷光电科技股份有限公司 发光二极管及其制造方法
KR101348473B1 (ko) * 2012-02-02 2014-01-08 광운대학교 산학협력단 버클구조를 갖는 유연성 유기 전계 발광소자 및 그 제조방법
IN2014DN09995A (zh) * 2012-06-11 2015-08-14 Jx Nippon Oil & Energy Corp
CN103715372B (zh) 2013-12-26 2017-08-25 京东方科技集团股份有限公司 Oled显示面板及其制作方法
CN105161632A (zh) 2015-08-03 2015-12-16 深圳市华星光电技术有限公司 有机电致发光器件结构及其制备方法
CN105742449B (zh) * 2016-04-01 2018-02-16 清华大学 发光二极管的电极制备方法
CN106328826B (zh) * 2016-10-24 2019-04-30 武汉华星光电技术有限公司 Oled显示装置及其制作方法
CN106449719B (zh) * 2016-11-17 2019-08-23 广东聚华印刷显示技术有限公司 一种有机发光显示面板、装置及制作方法
CN106531895B (zh) * 2016-12-12 2019-09-10 Tcl集团股份有限公司 量子点发光二极管及其制备方法与发光模组、显示装置
CN106784400A (zh) * 2016-12-20 2017-05-31 Tcl集团股份有限公司 空穴传输层与qled及制备方法、发光模组与显示装置
CN106711177A (zh) * 2016-12-28 2017-05-24 Tcl集团股份有限公司 一种增强光提取率的qled场效应晶体管及其制备方法
CN207183320U (zh) * 2017-09-22 2018-04-03 京东方科技集团股份有限公司 有机电致发光二极管、显示基板及显示装置
KR102395049B1 (ko) * 2017-10-25 2022-05-04 삼성전자주식회사 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자
CN108321312B (zh) * 2018-03-19 2020-02-14 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
CN108922984B (zh) * 2018-07-26 2021-04-16 京东方科技集团股份有限公司 显示面板及其制备方法、显示设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11778855B2 (en) 2018-07-26 2023-10-03 Boe Technology Group Co., Ltd. Light-emitting diode structure, fabrication method therefor, and display panel

Also Published As

Publication number Publication date
US11778855B2 (en) 2023-10-03
CN108922984B (zh) 2021-04-16
CN108922984A (zh) 2018-11-30
WO2020020341A1 (zh) 2020-01-30
US20210193876A1 (en) 2021-06-24

Similar Documents

Publication Publication Date Title
US20200035953A1 (en) Display panel and method for manufacturing the same
US10186561B2 (en) Array substrate and manufacturing method thereof and organic light-emitting display apparatus
US10573842B2 (en) Organic electroluminescent device, method for manufacturing the same and display device
JP4124379B2 (ja) 有機エレクトロルミネセンス素子
US20180294254A1 (en) Micro light emitting diode display panel and manufacturing method thereof
EP3496176A1 (en) Electroluminescent display device
JP5551200B2 (ja) 有機電界発光素子、照明装置及び有機電界発光素子の製造方法
US11793035B2 (en) Display panel, display device and manufacturing method of the display panel
US11393884B2 (en) Pixel definition layer, array substrate and display panel
US9231034B1 (en) Organic light-emitting diode displays
CN110444579B (zh) 一种显示面板和显示面板的制备方法
CN104282844A (zh) 有机发光结构及其制造方法及有机发光组件
JP2016004775A (ja) 有機発光ダイオード表示パネル
US11402685B2 (en) Display substrate and method for manufacturing the same, and display apparatus
JP6731748B2 (ja) 表示装置
CN113097417A (zh) Oled显示基板及显示装置
US20150132875A1 (en) Mask for forming layer, forming method of layer, and manufacturing method of organic light-emitting diode (oled) display using the same
US11108022B2 (en) OLED device, method for manufacturing the same, and display apparatus
US10928562B2 (en) Optical film element, backlight, and display device
US20180277781A1 (en) Light-emitting device and display device
US20210288116A1 (en) Color filter substrate and manufacturing method thereof, and organic light-emitting diode (oled) display panel
KR20070119234A (ko) 반사 측벽을 가지는 유기전계발광장치 및 이의 제조 방법.
TWI677979B (zh) 顯示面板及其製作方法
CN218244275U (zh) 一种阵列基板、显示面板及显示装置
JP2015185603A (ja) 発光モジュール及び照明器具

Legal Events

Date Code Title Description
AS Assignment

Owner name: BOE TECHNOLOGY GROUP CO., LTD., CHINA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHEN, ZHUO;REEL/FRAME:048987/0707

Effective date: 20190328

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION