US20180274125A1 - P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal - Google Patents

P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal Download PDF

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Publication number
US20180274125A1
US20180274125A1 US15/763,596 US201615763596A US2018274125A1 US 20180274125 A1 US20180274125 A1 US 20180274125A1 US 201615763596 A US201615763596 A US 201615763596A US 2018274125 A1 US2018274125 A1 US 2018274125A1
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US
United States
Prior art keywords
single crystal
sic single
type
sic
raw material
Prior art date
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Abandoned
Application number
US15/763,596
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English (en)
Inventor
Kazuma ETO
Tomohisa Kato
Hiromasa SUO
Yuichiro TOKUDA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
National Institute of Advanced Industrial Science and Technology AIST
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Denso Corp
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK, Denso Corp, National Institute of Advanced Industrial Science and Technology AIST filed Critical Showa Denko KK
Assigned to SHOWA DENKO K.K., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, DENSO CORPORATION reassignment SHOWA DENKO K.K. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KATO, TOMOHISA, ETO, KAZUMA, SUO, HIROMASA, TOKUDA, YUICHIRO
Assigned to DENSO CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, SHOWA DENKO K.K. reassignment DENSO CORPORATION CORRECTIVE ASSIGNMENT TO CORRECT THE SECOND ASSIGNOR'S DATE OF EXECUTION FROM 03/30/2018 TO 03/20/2018 PREVIOUSLY RECORDED ON REEL 045395 FRAME 0231. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: ETO, KAZUMA, KATO, TOMOHISA, SUO, HIROMASA, TOKUDA, YUICHIRO
Publication of US20180274125A1 publication Critical patent/US20180274125A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide

Definitions

  • a method for producing a p-type 4H—SiC single crystal according to the embodiment of the present invention includes a sublimation step of sublimating a nitrided aluminum raw material and a SiC raw material; and a crystal-growth step of stacking a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.
  • Presence of polymorphs can lower crystallinity of the SiC single crystal, and thus be a cause for increased resistivity.
  • polymorphs such as 6H—SiC are mixed, it is not possible to manufacture an originally intended device.
  • the method for producing the p-type 4H—SiC single crystal according to the embodiment of the present invention uses a sublimation method.
  • unnecessary impurities or the like can be prevented from being taken into the crystal.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US15/763,596 2015-09-30 2016-09-29 P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal Abandoned US20180274125A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015192724A JP6755524B2 (ja) 2015-09-30 2015-09-30 ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法
JP2015-192724 2015-09-30
PCT/JP2016/078834 WO2017057581A1 (ja) 2015-09-30 2016-09-29 ｐ型４Ｈ－ＳｉＣ単結晶及びｐ型４Ｈ－ＳｉＣ単結晶の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/078834 A-371-Of-International WO2017057581A1 (ja) 2015-09-30 2016-09-29 ｐ型４Ｈ－ＳｉＣ単結晶及びｐ型４Ｈ－ＳｉＣ単結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/914,506 Division US11542631B2 (en) 2015-09-30 2020-06-29 Method for producing p-type 4H-SiC single crystal

Publications (1)

Publication Number Publication Date
US20180274125A1 true US20180274125A1 (en) 2018-09-27

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Family Applications (2)

Application Number Title Priority Date Filing Date
US15/763,596 Abandoned US20180274125A1 (en) 2015-09-30 2016-09-29 P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal
US16/914,506 Active 2037-07-21 US11542631B2 (en) 2015-09-30 2020-06-29 Method for producing p-type 4H-SiC single crystal

Family Applications After (1)

Application Number Title Priority Date Filing Date
US16/914,506 Active 2037-07-21 US11542631B2 (en) 2015-09-30 2020-06-29 Method for producing p-type 4H-SiC single crystal

Country Status (4)

Country Link
US (2) US20180274125A1 (https=)
JP (1) JP6755524B2 (https=)
CN (1) CN108026663B (https=)
WO (1) WO2017057581A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210123843A1 (en) * 2019-10-29 2021-04-29 Skc Co., Ltd. Method for preparing silicon carbide wafer and silicon carbide wafer
US11211248B2 (en) 2018-02-28 2021-12-28 Abb Power Grids Switzerland Ag SiC electronic device fabricated by Al/Be co-implantation
US20220328310A1 (en) * 2020-01-24 2022-10-13 Ngk Insulators, Ltd. RARE EARTH-CONTAINING SiC SUBSTRATE AND METHOD FOR PRODUCING SiC EPITAXIAL LAYER

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7068914B2 (ja) * 2018-04-26 2022-05-17 昭和電工株式会社 断熱性遮蔽部材及びそれを備えた単結晶製造装置
JP7170521B2 (ja) * 2018-12-05 2022-11-14 昭和電工株式会社 ＳｉＣ単結晶の評価用サンプル取得方法
CN110129880A (zh) * 2019-04-26 2019-08-16 河北同光晶体有限公司 一种低碳包裹物密度SiC单晶的生长装置及生长方法
DE112020003654T5 (de) 2019-08-01 2022-04-21 Rohm Co., Ltd. Halbleitersubstrat, Halbleitervorrichtung und Verfahren zur Herstellung
JP7331590B2 (ja) * 2019-09-27 2023-08-23 株式会社デンソー 炭化珪素半導体装置
DE102020106291B4 (de) * 2020-03-09 2024-02-08 Ebner Industrieofenbau Gmbh Heizvorrichtung und Verfahren zur Kristallzüchtung mit beweglicher Impfkristallhalterung
CN112522788A (zh) * 2020-10-30 2021-03-19 山东天岳先进科技股份有限公司 一种富氮碳化硅粉料及其制备方法与应用
JP7845172B2 (ja) * 2022-12-26 2026-04-14 株式会社デンソー 炭化珪素ウェハおよびそれを用いた炭化珪素半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100289033A1 (en) * 2008-01-15 2010-11-18 Noboru Ohtani Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
US20100308344A1 (en) * 2008-01-29 2010-12-09 Akinori Seki Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal
US20120025153A1 (en) * 2010-07-30 2012-02-02 Toyota Jidosha Kabushiki Kaisha Silicon carbide single crystal and manufacturing method of the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
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US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US7316747B2 (en) * 2002-06-24 2008-01-08 Cree, Inc. Seeded single crystal silicon carbide growth and resulting crystals
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US7608524B2 (en) * 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
JP2014187113A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 気相成長装置および気相成長方法
JP6152981B2 (ja) 2013-08-02 2017-06-28 株式会社デンソー 炭化珪素単結晶

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100289033A1 (en) * 2008-01-15 2010-11-18 Noboru Ohtani Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
US20100308344A1 (en) * 2008-01-29 2010-12-09 Akinori Seki Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal
US20120025153A1 (en) * 2010-07-30 2012-02-02 Toyota Jidosha Kabushiki Kaisha Silicon carbide single crystal and manufacturing method of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11211248B2 (en) 2018-02-28 2021-12-28 Abb Power Grids Switzerland Ag SiC electronic device fabricated by Al/Be co-implantation
US20210123843A1 (en) * 2019-10-29 2021-04-29 Skc Co., Ltd. Method for preparing silicon carbide wafer and silicon carbide wafer
US11474012B2 (en) * 2019-10-29 2022-10-18 Senic Inc. Method for preparing silicon carbide wafer and silicon carbide wafer
US20220328310A1 (en) * 2020-01-24 2022-10-13 Ngk Insulators, Ltd. RARE EARTH-CONTAINING SiC SUBSTRATE AND METHOD FOR PRODUCING SiC EPITAXIAL LAYER
US12424440B2 (en) * 2020-01-24 2025-09-23 Ngk Insulators, Ltd. Rare earth-containing SiC substrate and method for producing SiC epitaxial layer

Also Published As

Publication number Publication date
CN108026663A (zh) 2018-05-11
US20200325595A1 (en) 2020-10-15
JP2017065959A (ja) 2017-04-06
US11542631B2 (en) 2023-01-03
CN108026663B (zh) 2021-05-11
JP6755524B2 (ja) 2020-09-16
WO2017057581A1 (ja) 2017-04-06

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Owner name: SHOWA DENKO K.K., JAPAN

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Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE

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