US20180274125A1 - P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal - Google Patents
P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal Download PDFInfo
- Publication number
- US20180274125A1 US20180274125A1 US15/763,596 US201615763596A US2018274125A1 US 20180274125 A1 US20180274125 A1 US 20180274125A1 US 201615763596 A US201615763596 A US 201615763596A US 2018274125 A1 US2018274125 A1 US 2018274125A1
- Authority
- US
- United States
- Prior art keywords
- single crystal
- sic single
- type
- sic
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 142
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 105
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 92
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 47
- 239000002994 raw material Substances 0.000 claims description 76
- 238000000859 sublimation Methods 0.000 claims description 15
- 230000008022 sublimation Effects 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 149
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 80
- 238000000034 method Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000005092 sublimation method Methods 0.000 description 6
- -1 aluminum compound Chemical class 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- 229910016384 Al4C3 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000003841 Raman measurement Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Definitions
- a method for producing a p-type 4H—SiC single crystal according to the embodiment of the present invention includes a sublimation step of sublimating a nitrided aluminum raw material and a SiC raw material; and a crystal-growth step of stacking a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.
- Presence of polymorphs can lower crystallinity of the SiC single crystal, and thus be a cause for increased resistivity.
- polymorphs such as 6H—SiC are mixed, it is not possible to manufacture an originally intended device.
- the method for producing the p-type 4H—SiC single crystal according to the embodiment of the present invention uses a sublimation method.
- unnecessary impurities or the like can be prevented from being taken into the crystal.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015192724A JP6755524B2 (ja) | 2015-09-30 | 2015-09-30 | ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法 |
| JP2015-192724 | 2015-09-30 | ||
| PCT/JP2016/078834 WO2017057581A1 (ja) | 2015-09-30 | 2016-09-29 | ｐ型４Ｈ－ＳｉＣ単結晶及びｐ型４Ｈ－ＳｉＣ単結晶の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2016/078834 A-371-Of-International WO2017057581A1 (ja) | 2015-09-30 | 2016-09-29 | ｐ型４Ｈ－ＳｉＣ単結晶及びｐ型４Ｈ－ＳｉＣ単結晶の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US16/914,506 Division US11542631B2 (en) | 2015-09-30 | 2020-06-29 | Method for producing p-type 4H-SiC single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20180274125A1 true US20180274125A1 (en) | 2018-09-27 |
Family
ID=58423571
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/763,596 Abandoned US20180274125A1 (en) | 2015-09-30 | 2016-09-29 | P-type 4h-sic single crystal and method for producing p-type 4h-sic single crystal |
| US16/914,506 Active 2037-07-21 US11542631B2 (en) | 2015-09-30 | 2020-06-29 | Method for producing p-type 4H-SiC single crystal |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US16/914,506 Active 2037-07-21 US11542631B2 (en) | 2015-09-30 | 2020-06-29 | Method for producing p-type 4H-SiC single crystal |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20180274125A1 (enrdf_load_stackoverflow) |
| JP (1) | JP6755524B2 (enrdf_load_stackoverflow) |
| CN (1) | CN108026663B (enrdf_load_stackoverflow) |
| WO (1) | WO2017057581A1 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210123843A1 (en) * | 2019-10-29 | 2021-04-29 | Skc Co., Ltd. | Method for preparing silicon carbide wafer and silicon carbide wafer |
| US11211248B2 (en) | 2018-02-28 | 2021-12-28 | Abb Power Grids Switzerland Ag | SiC electronic device fabricated by Al/Be co-implantation |
| US20220328310A1 (en) * | 2020-01-24 | 2022-10-13 | Ngk Insulators, Ltd. | RARE EARTH-CONTAINING SiC SUBSTRATE AND METHOD FOR PRODUCING SiC EPITAXIAL LAYER |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7068914B2 (ja) | 2018-04-26 | 2022-05-17 | 昭和電工株式会社 | 断熱性遮蔽部材及びそれを備えた単結晶製造装置 |
| JP7170521B2 (ja) * | 2018-12-05 | 2022-11-14 | 昭和電工株式会社 | ＳｉＣ単結晶の評価用サンプル取得方法 |
| CN110129880A (zh) * | 2019-04-26 | 2019-08-16 | 河北同光晶体有限公司 | 一种低碳包裹物密度SiC单晶的生长装置及生长方法 |
| CN114245932A (zh) | 2019-08-01 | 2022-03-25 | 罗姆股份有限公司 | 半导体基板和半导体装置及它们的制造方法 |
| JP7331590B2 (ja) * | 2019-09-27 | 2023-08-23 | 株式会社デンソー | 炭化珪素半導体装置 |
| DE102020106291B4 (de) * | 2020-03-09 | 2024-02-08 | Ebner Industrieofenbau Gmbh | Heizvorrichtung und Verfahren zur Kristallzüchtung mit beweglicher Impfkristallhalterung |
| CN112522788A (zh) * | 2020-10-30 | 2021-03-19 | 山东天岳先进科技股份有限公司 | 一种富氮碳化硅粉料及其制备方法与应用 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100289033A1 (en) * | 2008-01-15 | 2010-11-18 | Noboru Ohtani | Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom |
| US20100308344A1 (en) * | 2008-01-29 | 2010-12-09 | Akinori Seki | Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
| US20120025153A1 (en) * | 2010-07-30 | 2012-02-02 | Toyota Jidosha Kabushiki Kaisha | Silicon carbide single crystal and manufacturing method of the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5433167A (en) * | 1992-02-04 | 1995-07-18 | Sharp Kabushiki Kaisha | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal |
| US6063185A (en) | 1998-10-09 | 2000-05-16 | Cree, Inc. | Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| US7316747B2 (en) * | 2002-06-24 | 2008-01-08 | Cree, Inc. | Seeded single crystal silicon carbide growth and resulting crystals |
| US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
| US7608524B2 (en) | 2005-04-19 | 2009-10-27 | Ii-Vi Incorporated | Method of and system for forming SiC crystals having spatially uniform doping impurities |
| JP2014187113A (ja) | 2013-03-22 | 2014-10-02 | Toshiba Corp | 気相成長装置および気相成長方法 |
| JP6152981B2 (ja) | 2013-08-02 | 2017-06-28 | 株式会社デンソー | 炭化珪素単結晶 |
-
2015
- 2015-09-30 JP JP2015192724A patent/JP6755524B2/ja active Active
-
2016
- 2016-09-29 US US15/763,596 patent/US20180274125A1/en not_active Abandoned
- 2016-09-29 WO PCT/JP2016/078834 patent/WO2017057581A1/ja active Application Filing
- 2016-09-29 CN CN201680056202.5A patent/CN108026663B/zh active Active
-
2020
- 2020-06-29 US US16/914,506 patent/US11542631B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100289033A1 (en) * | 2008-01-15 | 2010-11-18 | Noboru Ohtani | Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom |
| US20100308344A1 (en) * | 2008-01-29 | 2010-12-09 | Akinori Seki | Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
| US20120025153A1 (en) * | 2010-07-30 | 2012-02-02 | Toyota Jidosha Kabushiki Kaisha | Silicon carbide single crystal and manufacturing method of the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11211248B2 (en) | 2018-02-28 | 2021-12-28 | Abb Power Grids Switzerland Ag | SiC electronic device fabricated by Al/Be co-implantation |
| US20210123843A1 (en) * | 2019-10-29 | 2021-04-29 | Skc Co., Ltd. | Method for preparing silicon carbide wafer and silicon carbide wafer |
| US11474012B2 (en) * | 2019-10-29 | 2022-10-18 | Senic Inc. | Method for preparing silicon carbide wafer and silicon carbide wafer |
| US20220328310A1 (en) * | 2020-01-24 | 2022-10-13 | Ngk Insulators, Ltd. | RARE EARTH-CONTAINING SiC SUBSTRATE AND METHOD FOR PRODUCING SiC EPITAXIAL LAYER |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108026663B (zh) | 2021-05-11 |
| US20200325595A1 (en) | 2020-10-15 |
| US11542631B2 (en) | 2023-01-03 |
| JP2017065959A (ja) | 2017-04-06 |
| CN108026663A (zh) | 2018-05-11 |
| JP6755524B2 (ja) | 2020-09-16 |
| WO2017057581A1 (ja) | 2017-04-06 |
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