US20180233642A1 - Light-emitting device and manufacturing method of light-emitting device - Google Patents
Light-emitting device and manufacturing method of light-emitting device Download PDFInfo
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- US20180233642A1 US20180233642A1 US15/723,382 US201715723382A US2018233642A1 US 20180233642 A1 US20180233642 A1 US 20180233642A1 US 201715723382 A US201715723382 A US 201715723382A US 2018233642 A1 US2018233642 A1 US 2018233642A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 238000009413 insulation Methods 0.000 claims abstract description 23
- 229910000679 solder Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- HOHAQBNFPZHTJB-UHFFFAOYSA-N beryllium gold Chemical compound [Be].[Au] HOHAQBNFPZHTJB-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005549 size reduction Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 2
- 229910004304 SiNy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Definitions
- the present invention relates to a light-emitting device and a manufacturing method of a light-emitting device, and in particular to a light-emitting device and a manufacturing method of a light-emitting device that involves chip scale package through a design of wiring and a packaging process corresponding thereto.
- light-emitting diodes are a widely used product and they are applicable to various technical fields, particularly applications concerning thinned and small-sized products being increasingly widened, so that an increasing number of products are being under development toward “chip scale package”. For example, a number of products that involve the use of light-emitting diodes are made with chip scale package by taking flip chip package for size reduction and thinning.
- the known light-emitting diode 1 comprises a transparent base plate 11 , epitaxial layers 12 , 13 , an insulation layer 14 , and electrodes 15 , 16 .
- the electrodes 15 , 16 are of horizontal electrode structures, and in a manufacturing process, a metal ball 17 is placed on the electrode 16 to make the electrodes 15 , 16 identical in height.
- a metal ball 17 is placed on the electrode 16 to make the electrodes 15 , 16 identical in height.
- such a process of placing the metal ball 17 on the electrode 16 often results in a height difference between the electrodes 15 and 16 and this increases the product defect rate, and also increases potential risk and cost of fabrication.
- FIG. 1B an improvement over the structure of the light-emitting diode shown in FIG. 1A is provided.
- FIG. 1B provides a structure of a light-emitting diode 1 , in which a recess is formed with the insulation layer 14 and the electrode 16 is disposed in the recess in order to make the electrodes 15 , 16 identical to each other in height.
- a recess is formed with the insulation layer 14 and the electrode 16 is disposed in the recess in order to make the electrodes 15 , 16 identical to each other in height.
- a base plate 11 used in flip chip packaging and the flip chip process of FIG. 1A both need a transparent base plate 11 , alignment of the electrodes 15 , 16 in making a package is difficult.
- the techniques that involve flip chip packaging to achieve size reduction and thinning takes an eutectic process to form the structure of the light-emitting diode, then the equipment used for eutectic process requires a higher standard and thus, the fabrication cost may be increased.
- the present invention discloses a light-emitting device, which comprises a base plate, the bonding metal layer, the conductive oxide layer, the epitaxial layer, the insulation layer, the first ohmic contact layer, the second ohmic contact layer, the third ohmic contact layer and the conductor line.
- the bonding metal layer is disposed on a surface of a first part of the base plate.
- the conductive oxide layer is disposed on the bonding metal layer.
- the epitaxial layer is disposed on a surface of a first part of the conductive oxide layer.
- the insulation layer is disposed on a first side edge of the bonding metal layer, the conductive oxide layer, and the epitaxial layer and disposed on a surface of a first part of the epitaxial layer.
- the first ohmic contact layer is disposed on a surface of a second part of the base plate.
- the second ohmic contact layer is disposed on a surface of a second part of the epitaxial layer.
- the third ohmic contact layer is disposed on a surface of a second part of the conductive oxide layer.
- the conductor line electrically connects the first ohmic contact layer and the second ohmic contact layer to each other.
- the present invention also discloses a manufacturing method of a light-emitting device, which comprises the following step: providing a first base plate; forming an epitaxial layer on the first base plate; forming a conductive oxide layer on the epitaxial layer; forming a first bonding metal layer on the conductive oxide layer; providing a second base plate; forming a second bonding metal layer on the second base plate; bonding the first bonding metal layer and the second bonding metal layer to each other; removing the first base plate; removing a portion of the epitaxial layer; removing a portion of the first bonding metal layer, the second bonding metal layer, and the conductive oxide layer; forming an insulation layer to cover the second base plate, the first bonding metal layer, the second bonding metal layer, the conductive oxide layer, and the epitaxial layer; removing portions of the insulation layer on the second base plate, the conductive oxide layer, and the epitaxial layer to expose, partly, a surface of the second base plate, a surface of the conductive oxide layer, and
- the present invention involves a process of providing a conductor line to more precisely control the height of electrode so as to prevent an issue associated with height difference of electrodes.
- the light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device.
- the light-emitting device of the present invention allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication, allowing for wide application to the technical field of chip size package.
- FIG. 1A is a schematic view showing a structure of a known light-emitting diode
- FIG. 1B is a schematic view illustrating an improvement of the structure of the light-emitting diode shown in FIG. 1A ;
- FIG. 2 is a flow chart illustrating a manufacturing method of a light-emitting device according to the present invention
- FIGS. 3A-3H are schematic views illustrating different steps of the manufacturing method of the light-emitting device according to the present invention.
- FIG. 4 is a schematic view showing a structure of a light-emitting device according to the present invention.
- FIG. 5 is a schematic view illustrating a structure of another light-emitting device according to the present invention.
- the manufacturing method of a light-emitting device 3 generally comprises the following steps: in Step S 2 , a first base plate 31 is provided. In Step S 4 , an epitaxial layer 32 is formed. on the first base plate 31 . In Step S 6 , a conductive oxide layer 33 is formed on the epitaxial layer 32 . In Step S 8 , a first bonding metal layer 34 is formed on the conductive oxide layer 33 . In Step S 10 , a second base plate 35 is provided.
- Step S 12 a second bonding metal layer 36 is formed on the second base plate 35 .
- Step S 14 the first bonding metal layer 34 and the second bonding metal layer 36 are bonded to each other.
- Step S 16 the first base plate 31 is removed.
- Step S 18 a portion of the epitaxial layer 32 is removed.
- Step S 20 a portion of the first bonding metal layer 34 , the second bonding metal layer 36 , and the conductive oxide layer 33 is removed.
- an insulation layer 37 is formed to cover the second base plate 35 , the first bonding metal layer 34 , the second bonding metal layer 36 , the conductive oxide layer 33 , and the epitaxial layer 32 .
- Step S 24 portions of the insulation layer 37 that are located on the second base plate 35 , the conductive oxide layer 33 , and the epitaxial layer 32 are removed to expose a portion of a surface of the second base plate 35 , a portion of a surface of the conductive oxide layer 33 , and a portion of a surface of the epitaxial layer 32 .
- Step S 26 a first ohmic contact layer E 1 is formed on the surface of the second base plate 35 and a second ohmic contact layer E 2 is formed on the surface of the epitaxial layer 32 .
- Step S 28 a third ohmic contact layer E 3 is formed on the surface of the conductive oxide layer 33 .
- a conductor line 38 is formed to connect the first ohmic contact layer E 1 and the second ohmic contact layer E 2 to each other.
- the second base plate 35 comprises a non-conductive plate and may selectively uses a light-transmitting plate or a non-light-transmitting plate.
- the step of removing a portion of the epitaxial layer 32 comprises removing parts of the epitaxial layer 32 on a first side edge and a second side edge in order to expose portions of a surface of the conductive oxide layer 33 to allow for disposing the third ohmic contact layer E 3 after the formation of the insulation layer 37 .
- the step of removing a portion of the first bonding metal layer 34 , the second bonding metal layer 36 , and the conductive oxide layer 33 comprises removing a part of the first bonding metal layer 34 on the first side edge, a part of the second bonding metal layer 36 on the first side edge, and apart of the conductive oxide layer 33 on the first side edge to allow for, after the removal, forming the insulation layer 37 and disposing the first ohmic contact layer E 1 on a surface of the second base plate 35 .
- insulation layers 371 , 372 are formed to respectively cover a part of a surface of the second base plate 35 and a part of a surface of the epitaxial layer 32 and cover a part of the first bonding metal layer 34 on the first side edge, a part of the second bonding metal layer 36 on the first side edge, and a part of the conductive oxide layer 33 on the first side edge.
- first ohmic contact layer E 1 , the second ohmic contact layer E 2 , and the third ohmic contact layer E 3 do not need to be formed in a specific sequence and may be formed at the same time after the formation of the insulation layers 371 , 372 .
- reduction of a thickness of the second base plate 35 is further included in order to reduce an overall thickness of the light-emitting device 3 .
- the overall thickness of the light-emitting device 3 is set between 80 and 350 micrometers and an actual thickness can be determined according to the needs for practical design and fabrication, such as it would be far less than a thickness of a prior art light-emitting device.
- the reduction of thickness of the second base plate 35 can be done just to allow for electrical connection, by means of silver glue or solder paste, with signals of a circuit board and ohmic contact layers and allows for bonding, through adhering techniques, of the light-emitting device 3 to the circuit board.
- the adhering techniques comprise surface mounting techniques and the present invention is not limited thereto.
- the conductor line comprises any electrically conductive material for transmission of signals of the first ohmic contact layer E 1 and the second ohmic contact layer E 2 .
- the conductor line 38 to transmit electrical conduction of the first ohmic contact layer E 1 and the second ohmic contact layer E 2 , rather than using wiring bonding process to connect the first ohmic contact layer E 1 and the second ohmic contact layer E 2 , the operation of packaging the light-emitting device can be simplified and as such, the purpose of size reduction and thinning can be achieved, allowing for applications to the technical field of chip scale package.
- the light-emitting device 4 comprises a base plate 41 , a bonding metal layer 42 , a conductive oxide layer 43 , an epitaxial layer 44 , insulation layers 451 , 452 , a first ohmic contact layer E 1 , a second ohmic contact. layer E 2 , a third ohmic contact layer E 3 , and a conductor line 46 .
- the bonding metal layer 42 is disposed on a surface of a first part of the base plate 41 .
- the conductive oxide layer 43 is disposed on the bonding metal layer 42 .
- the epitaxial layer 44 is disposed on a surface of a first part. of the conductive oxide layer 43 .
- the insulation layer 451 is disposed on a first side edge of the bonding metal layer 42 , the conductive oxide layer 43 , and the epitaxial layer 44 the first side edge, and is also disposed on a surface of a first part of the epitaxial layer 44 .
- the first ohmic contact layer E 1 is disposed on a surface of a second part of the. base plate 41 .
- the second ohmic contact layer E 2 is disposed on a surface of a second part of the epitaxial layer 44 .
- the third ohmic contact layer E 3 is disposed on a surface of a second part of the conductive oxide layer 43 .
- the conductor line 46 electrically connects the first ohmic contact layer E 1 and the second ohmic contact layer E 2 to each other.
- the light-emitting device of the present invention may further comprises a non-conductive oxide layer 47 disposed between the epitaxial layer 44 and the conductive oxide layer 43 .
- the non-conductive oxide layer 47 comprises at least one of silicon nitride (SiNy), silicon oxynitride (SiON) or silicon dioxide.
- the non-conductive oxide layer 47 comprises at least one via 471 connecting the epitaxial layer 44 and the conductive oxide layer 43 in order to form ohmic contact with the epitaxial layer 44 .
- the via 471 is a metallic material, including metallic materials, such as zinc gold (AuZn), beryllium gold (AuBe) chromium (Cr) or gold (Au).
- the base plate 41 comprises a non-conductive plate.
- the non-conductive plate comprises a ceramic plate, an aluminum nitride plate, or an aluminum oxide plate.
- the base plate 41 can be a light-transmitting plate or a non-light-transmitting plate.
- the insulation layer 451 comprises silicon dioxide or silicon nitride for isolating the first ohmic contact layer E 1 and the second ohmic contact layer E 2 .
- the insulation layer 452 is further included, disposed on a surface of a third part of the epitaxial layer 44 and between a second side edge of the epitaxial layer 44 and the third ohmic contact layer E 3 to isolate the third ohmic contact layer E 3 for preventing shorting.
- the conductor line 46 has a width less than a diameter of a solder ball used in a wire bonding process.
- the solder ball used in a wire bonding process has a diameter that is greater than 100 um; however, in the present invention, since no wire bonding is necessary, it is possible to easily make a conductor line of any desired width according to practical needs for design and fabrication, such as a conductor line having a width greater than 5 micrometers. In comparison, this is far less than the diameter of the solder ball so that an effect of saving cost can be achieved.
- the light-emitting device 4 is bonded to a circuit board by means of adhering techniques, and the circuit board is electrically connected with the second ohmic contact layer E 2 and the third ohmic contact layer E 3 , and silver glue or solder paste is used to electrically connect the conductor line 46 and the third ohmic contact layer E 3 .
- the light-emitting device 4 has an overall thickness that is between 80 and 350 micrometers and an actual thickness can be determined according to practical design and fabrication, and in comparison with the prior art, the thickness of the light-emitting device can be greatly reduced.
- the present invention involves a process of providing a conductor line to more precisely control the height of electrode so as to prevent an issue associated with height difference of electrodes.
- the light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device.
- the light-emitting device of the present invention allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication, allowing for wide application to the technical field of chip size package.
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Abstract
Description
- The present invention relates to a light-emitting device and a manufacturing method of a light-emitting device, and in particular to a light-emitting device and a manufacturing method of a light-emitting device that involves chip scale package through a design of wiring and a packaging process corresponding thereto.
- In the technical field of light-emitting devices, light-emitting diodes are a widely used product and they are applicable to various technical fields, particularly applications concerning thinned and small-sized products being increasingly widened, so that an increasing number of products are being under development toward “chip scale package”. For example, a number of products that involve the use of light-emitting diodes are made with chip scale package by taking flip chip package for size reduction and thinning.
- Referring to
FIG. 1A , a schematic view is given to illustrate a structure of a known light-emitting diode. The known light-emitting diode 1 comprises atransparent base plate 11,epitaxial layers insulation layer 14, andelectrodes FIG. 1A , theelectrodes metal ball 17 is placed on theelectrode 16 to make theelectrodes metal ball 17 on theelectrode 16 often results in a height difference between theelectrodes - Referring to
FIG. 1B , an improvement over the structure of the light-emitting diode shown inFIG. 1A is provided. To overcome the issue of height difference between theelectrodes FIG. 1A ,FIG. 1B provides a structure of a light-emitting diode 1, in which a recess is formed with theinsulation layer 14 and theelectrode 16 is disposed in the recess in order to make theelectrodes base plate 11 used in flip chip packaging and the flip chip process ofFIG. 1A both need atransparent base plate 11, alignment of theelectrodes - Further, if the techniques that involve flip chip packaging to achieve size reduction and thinning takes an eutectic process to form the structure of the light-emitting diode, then the equipment used for eutectic process requires a higher standard and thus, the fabrication cost may be increased.
- Thus, it is an important contemporary technical issue to provide a process that makes a package that is closer to a chip size.
- In view of the above, the present invention discloses a light-emitting device, which comprises a base plate, the bonding metal layer, the conductive oxide layer, the epitaxial layer, the insulation layer, the first ohmic contact layer, the second ohmic contact layer, the third ohmic contact layer and the conductor line. The bonding metal layer is disposed on a surface of a first part of the base plate. The conductive oxide layer is disposed on the bonding metal layer. The epitaxial layer is disposed on a surface of a first part of the conductive oxide layer. The insulation layer is disposed on a first side edge of the bonding metal layer, the conductive oxide layer, and the epitaxial layer and disposed on a surface of a first part of the epitaxial layer. The first ohmic contact layer is disposed on a surface of a second part of the base plate. The second ohmic contact layer is disposed on a surface of a second part of the epitaxial layer. The third ohmic contact layer is disposed on a surface of a second part of the conductive oxide layer. The conductor line electrically connects the first ohmic contact layer and the second ohmic contact layer to each other.
- The present invention also discloses a manufacturing method of a light-emitting device, which comprises the following step: providing a first base plate; forming an epitaxial layer on the first base plate; forming a conductive oxide layer on the epitaxial layer; forming a first bonding metal layer on the conductive oxide layer; providing a second base plate; forming a second bonding metal layer on the second base plate; bonding the first bonding metal layer and the second bonding metal layer to each other; removing the first base plate; removing a portion of the epitaxial layer; removing a portion of the first bonding metal layer, the second bonding metal layer, and the conductive oxide layer; forming an insulation layer to cover the second base plate, the first bonding metal layer, the second bonding metal layer, the conductive oxide layer, and the epitaxial layer; removing portions of the insulation layer on the second base plate, the conductive oxide layer, and the epitaxial layer to expose, partly, a surface of the second base plate, a surface of the conductive oxide layer, and a surface of the epitaxial layer; forming a first ohmic contact layer on the surface of the second base plate; forming a second ohmic contact layer on the surface of the epitaxial layer; forming a third ohmic contact layer on the surface of the conductive oxide layer; and forming a conductor line to connect the first ohmic contact layer and the second ohmic contact layer to each other.
- Based on the above, compared to the prior art, where a metal ball is disposed on an electrode and a recess is provided for the purposes of making the electrodes identical, in height, to each other, the present invention involves a process of providing a conductor line to more precisely control the height of electrode so as to prevent an issue associated with height difference of electrodes. Further, the light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device. Further, the light-emitting device of the present invention, after the formation of the conductor line on the ohmic contact layer, allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication, allowing for wide application to the technical field of chip size package.
- The present invention will be apparent to those skilled in the art by reading the following description of preferred embodiments thereof with reference to the drawings, in which:
-
FIG. 1A is a schematic view showing a structure of a known light-emitting diode; -
FIG. 1B is a schematic view illustrating an improvement of the structure of the light-emitting diode shown inFIG. 1A ; -
FIG. 2 is a flow chart illustrating a manufacturing method of a light-emitting device according to the present invention; -
FIGS. 3A-3H are schematic views illustrating different steps of the manufacturing method of the light-emitting device according to the present invention; -
FIG. 4 is a schematic view showing a structure of a light-emitting device according to the present invention; and -
FIG. 5 is a schematic view illustrating a structure of another light-emitting device according to the present invention. - Referring to
FIGS. 2 and 3A-3H , which respectively provide a flow chart illustrating a manufacturing method of a light-emitting device according to the present invention and different steps of the manufacturing method, the manufacturing method of a light-emitting device 3 generally comprises the following steps: in Step S2, afirst base plate 31 is provided. In Step S4, anepitaxial layer 32 is formed. on thefirst base plate 31. In Step S6, aconductive oxide layer 33 is formed on theepitaxial layer 32. In Step S8, a firstbonding metal layer 34 is formed on theconductive oxide layer 33. In Step S10, asecond base plate 35 is provided. In Step S12, a secondbonding metal layer 36 is formed on thesecond base plate 35. In Step S14, the firstbonding metal layer 34 and the secondbonding metal layer 36 are bonded to each other. In Step S16, thefirst base plate 31 is removed. In Step S18, a portion of theepitaxial layer 32 is removed. In Step S20, a portion of the firstbonding metal layer 34, the secondbonding metal layer 36, and theconductive oxide layer 33 is removed. In Step S22, aninsulation layer 37 is formed to cover thesecond base plate 35, the firstbonding metal layer 34, the secondbonding metal layer 36, theconductive oxide layer 33, and theepitaxial layer 32. In Step S24, portions of theinsulation layer 37 that are located on thesecond base plate 35, theconductive oxide layer 33, and theepitaxial layer 32 are removed to expose a portion of a surface of thesecond base plate 35, a portion of a surface of theconductive oxide layer 33, and a portion of a surface of theepitaxial layer 32. In Step S26, a first ohmic contact layer E1 is formed on the surface of thesecond base plate 35 and a second ohmic contact layer E2 is formed on the surface of theepitaxial layer 32. In Step S28, a third ohmic contact layer E3 is formed on the surface of theconductive oxide layer 33. In Step S30, aconductor line 38 is formed to connect the first ohmic contact layer E1 and the second ohmic contact layer E2 to each other. - In the present invention, the
second base plate 35 comprises a non-conductive plate and may selectively uses a light-transmitting plate or a non-light-transmitting plate. - The step of removing a portion of the
epitaxial layer 32 comprises removing parts of theepitaxial layer 32 on a first side edge and a second side edge in order to expose portions of a surface of theconductive oxide layer 33 to allow for disposing the third ohmic contact layer E3 after the formation of theinsulation layer 37. - The step of removing a portion of the first
bonding metal layer 34, the secondbonding metal layer 36, and theconductive oxide layer 33 comprises removing a part of the firstbonding metal layer 34 on the first side edge, a part of the secondbonding metal layer 36 on the first side edge, and apart of theconductive oxide layer 33 on the first side edge to allow for, after the removal, forming theinsulation layer 37 and disposing the first ohmic contact layer E1 on a surface of thesecond base plate 35. - It is noted that as shown in
FIG. 3F , after the portions of theinsulation layer 37 are removed, insulation layers 371, 372 are formed to respectively cover a part of a surface of thesecond base plate 35 and a part of a surface of theepitaxial layer 32 and cover a part of the firstbonding metal layer 34 on the first side edge, a part of the secondbonding metal layer 36 on the first side edge, and a part of theconductive oxide layer 33 on the first side edge. - Further, the first ohmic contact layer E1, the second ohmic contact layer E2, and the third ohmic contact layer E3 do not need to be formed in a specific sequence and may be formed at the same time after the formation of the insulation layers 371, 372.
- In the above steps, reduction of a thickness of the
second base plate 35 is further included in order to reduce an overall thickness of the light-emittingdevice 3. The overall thickness of the light-emittingdevice 3 is set between 80 and 350 micrometers and an actual thickness can be determined according to the needs for practical design and fabrication, such as it would be far less than a thickness of a prior art light-emitting device. The reduction of thickness of thesecond base plate 35 can be done just to allow for electrical connection, by means of silver glue or solder paste, with signals of a circuit board and ohmic contact layers and allows for bonding, through adhering techniques, of the light-emittingdevice 3 to the circuit board. The adhering techniques comprise surface mounting techniques and the present invention is not limited thereto. - Further, in the present invention, the conductor line comprises any electrically conductive material for transmission of signals of the first ohmic contact layer E1 and the second ohmic contact layer E2. Thus, by using the
conductor line 38 to transmit electrical conduction of the first ohmic contact layer E1 and the second ohmic contact layer E2, rather than using wiring bonding process to connect the first ohmic contact layer E1 and the second ohmic contact layer E2, the operation of packaging the light-emitting device can be simplified and as such, the purpose of size reduction and thinning can be achieved, allowing for applications to the technical field of chip scale package. - Referring to
FIG. 4 , a schematic view is given to illustrate a structure of a light-emitting device according to the present invention. The light-emittingdevice 4 comprises abase plate 41, abonding metal layer 42, aconductive oxide layer 43, anepitaxial layer 44, insulation layers 451, 452, a first ohmic contact layer E1, a second ohmic contact. layer E2, a third ohmic contact layer E3, and aconductor line 46. Thebonding metal layer 42 is disposed on a surface of a first part of thebase plate 41. Theconductive oxide layer 43 is disposed on thebonding metal layer 42. Theepitaxial layer 44 is disposed on a surface of a first part. of theconductive oxide layer 43. Theinsulation layer 451 is disposed on a first side edge of thebonding metal layer 42, theconductive oxide layer 43, and theepitaxial layer 44 the first side edge, and is also disposed on a surface of a first part of theepitaxial layer 44. The first ohmic contact layer E1 is disposed on a surface of a second part of the.base plate 41. The second ohmic contact layer E2 is disposed on a surface of a second part of theepitaxial layer 44. The third ohmic contact layer E3 is disposed on a surface of a second part of theconductive oxide layer 43. Theconductor line 46 electrically connects the first ohmic contact layer E1 and the second ohmic contact layer E2 to each other. - Referring to
FIG. 5 , a schematic view is given to illustrate a structure of another light-emitting device according to the present invention. Based on the above description, the light-emitting device of the present invention may further comprises anon-conductive oxide layer 47 disposed between theepitaxial layer 44 and theconductive oxide layer 43. Thenon-conductive oxide layer 47 comprises at least one of silicon nitride (SiNy), silicon oxynitride (SiON) or silicon dioxide. Further, thenon-conductive oxide layer 47 comprises at least one via 471 connecting theepitaxial layer 44 and theconductive oxide layer 43 in order to form ohmic contact with theepitaxial layer 44. Further, the via 471 is a metallic material, including metallic materials, such as zinc gold (AuZn), beryllium gold (AuBe) chromium (Cr) or gold (Au). - In an embodiment of the present invention, the
base plate 41 comprises a non-conductive plate. The non-conductive plate comprises a ceramic plate, an aluminum nitride plate, or an aluminum oxide plate. In addition, in the present invention, thebase plate 41 can be a light-transmitting plate or a non-light-transmitting plate. - The
insulation layer 451 comprises silicon dioxide or silicon nitride for isolating the first ohmic contact layer E1 and the second ohmic contact layer E2. In another embodiment of the present invention, theinsulation layer 452 is further included, disposed on a surface of a third part of theepitaxial layer 44 and between a second side edge of theepitaxial layer 44 and the third ohmic contact layer E3 to isolate the third ohmic contact layer E3 for preventing shorting. - The
conductor line 46 has a width less than a diameter of a solder ball used in a wire bonding process. Generally, the solder ball used in a wire bonding process has a diameter that is greater than 100 um; however, in the present invention, since no wire bonding is necessary, it is possible to easily make a conductor line of any desired width according to practical needs for design and fabrication, such as a conductor line having a width greater than 5 micrometers. In comparison, this is far less than the diameter of the solder ball so that an effect of saving cost can be achieved. - The light-emitting
device 4 is bonded to a circuit board by means of adhering techniques, and the circuit board is electrically connected with the second ohmic contact layer E2 and the third ohmic contact layer E3, and silver glue or solder paste is used to electrically connect theconductor line 46 and the third ohmic contact layer E3. In the present invention, the light-emittingdevice 4 has an overall thickness that is between 80 and 350 micrometers and an actual thickness can be determined according to practical design and fabrication, and in comparison with the prior art, the thickness of the light-emitting device can be greatly reduced. - In summary, compared to the prior art, where a metal ball is disposed on an electrode and a recess is provided for the purposes of making the electrodes identical, in height, to each other, the present invention involves a process of providing a conductor line to more precisely control the height of electrode so as to prevent an issue associated with height difference of electrodes. Further, the light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device. Further, the light-emitting device of the present invention, after the formation of the conductor line on the ohmic contact layer, allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication, allowing for wide application to the technical field of chip size package.
- Although the present invention has been described with reference to the preferred embodiments thereof, it is apparent to those skilled in the art that a variety of modifications and changes may be made without departing from the scope of the present invention which is intended to be defined by the appended claims.
Claims (23)
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US11824036B2 (en) | 2021-03-22 | 2023-11-21 | Kioxia Corporation | Semiconductor device |
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JP2016086030A (en) * | 2014-10-23 | 2016-05-19 | スタンレー電気株式会社 | Light emitting device and manufacturing method of the same |
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