CN219370968U - Flip film chip structure - Google Patents
Flip film chip structure Download PDFInfo
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- CN219370968U CN219370968U CN202320110383.2U CN202320110383U CN219370968U CN 219370968 U CN219370968 U CN 219370968U CN 202320110383 U CN202320110383 U CN 202320110383U CN 219370968 U CN219370968 U CN 219370968U
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Abstract
The utility model discloses a flip film chip structure, which comprises: the device comprises a first chip module, a second chip module and a bonding module; the first chip module includes: the device comprises a first substrate, a plurality of first P electrodes and first N electrodes; the second chip module is bonded with the first P electrode and the first N electrode; the second chip module includes: a substrate, an insulating layer, a first connection terminal, and a second connection terminal; a plurality of through holes are formed in the substrate, and the through holes are filled with a first metal material; the first ends of the through holes are connected with the first P electrodes and the first N electrodes in a one-to-one correspondence manner; the second ends of the through holes connected with the plurality of first P electrodes are communicated through a second metal material, and a first metal channel and a second metal channel penetrating through the insulating layer are arranged in the insulating layer; the first metal channel is connected with the first metal material; the second metal channel is connected with a second end of the through hole connected with the first N electrode.
Description
Technical Field
The utility model relates to the field of semiconductor chips, in particular to a flip film chip structure.
Background
At present, a conventional flip chip is usually not required to strip a sapphire substrate, insulation of a P electrode and an N electrode is realized on the same side of the chip, and a light emergent surface of the chip exits from the back surface of the sapphire substrate.
Disclosure of Invention
The utility model provides a flip film chip structure which is used for realizing high-power high-current injection, and can improve the yield of devices when being applied to chip manufacture.
According to a first aspect of the present utility model, there is provided a flip-chip thin film chip structure comprising:
the device comprises a first chip module, a second chip module and a bonding module;
wherein the first chip module includes: the device comprises a first substrate, a plurality of first P electrodes and first N electrodes;
the plurality of first P electrodes and the first N electrode are connected with the first surface of the first substrate; the second chip module is bonded with the plurality of first P electrodes and the first N electrodes through the bonding module;
the second chip module includes: a substrate, an insulating layer, a first connection terminal, and a second connection terminal; the first connection terminal and the second connection terminal are connected with the substrate through the insulating layer;
wherein, a plurality of through holes are arranged in the substrate, the through holes penetrate through the substrate, and the through holes are filled with a first metal material; the first ends of the through holes are connected with the first P electrodes and the first N electrodes in a one-to-one correspondence manner; and the second ends of the through holes connected with the plurality of first P electrodes are communicated through a second metal material;
a first metal channel and a second metal channel which penetrate through the insulating layer are arranged in the insulating layer; the first metal channel is connected with the first metal material; the second metal channel is connected with a second end of the through hole connected with the first N electrode.
Optionally, the flip film chip structure further includes: a light transmission module;
the light transmission module is connected with the second surface of the first substrate.
Optionally, the material of the light-transmitting module may at least include: glass and fluorescent powder.
Optionally, the material of the substrate is a ceramic material.
Optionally, the first metal material is consistent with the second metal material;
the first metal material and the second metal material may include at least: ni, ag, al, ti, pt, cr, ti, wu, au, in or Sn.
Optionally, the number of the first metal channels is at least one.
Optionally, the number of the second metal channels is one.
Optionally, the bonding layer has a thickness of greater than 1 micron.
Optionally, the bonding layer is made of the following materials: indium or silver or tin material.
Optionally, the material of the first substrate is gallium nitride.
Optionally, the insulating layer is made of the following materials: white glue, silicon oxide, silicon nitride, aluminum oxide, epoxy or polyimide.
Optionally, the first connection terminal is a P-PAD; the second connection terminal is an N-PAD.
Optionally, the thickness ranges of the first connection terminal and the second connection terminal are: 200nm-4um.
According to the flip film chip structure provided by the utility model, the plurality of first P electrodes and the first N electrodes are directly connected through the substrate, the substrate is connected with the insulating layer, the substrate is an insulating substrate with high heat conduction, the first metal material and the second metal material are arranged in the substrate to be communicated with the plurality of first P electrodes and the first N electrodes, and the first metal channel and the second metal channel which are communicated with the first metal material and the second metal material are arranged on the insulating layer, so that the connection between the plurality of P electrodes and the first N electrodes and the first connecting terminal and the second connecting terminal is realized, and the high-power large-current inflow is realized through the flip film chip structure provided by the utility model. And a plurality of first P electrodes and second N electrodes are directly connected with the insulating layer, so that the problem of low device yield caused by insulating treatment of the electrodes in the prior art is solved.
Drawings
In order to more clearly illustrate the embodiments of the utility model or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the utility model, and that other drawings can be obtained according to these drawings without inventive faculty for a person skilled in the art.
FIG. 1 is a schematic diagram of a flip-chip structure according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram of a flip-chip structure according to an embodiment of the utility model;
reference numerals illustrate:
100-a first chip module;
101-a first substrate;
102-a first P electrode;
103-a first N electrode;
200-a second chip module;
201-a substrate;
2011-a first metal material;
2012-a second metal material;
202-an insulating layer;
2021-first metal channels;
2022-second metal channels;
203-a first connection terminal;
204-a second connection terminal;
300-bonding module;
400-light transmission module.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims and in the above drawings, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The technical scheme of the utility model is described in detail below by specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
The yield is the ratio of the number of chips qualified in test after all the process steps to all the effective chips, however, in the prior art, the number of pixel units in the chips is increased, so that the insulation treatment of the chips does not reach the standard, the yield of finally obtained devices is low, and the flip chip provided in the prior art cannot realize high-power large-current introduction.
In view of the above, the present utility model provides a novel flip-chip thin film chip structure for implementing high-power high-current injection, and for improving the yield of chips in chip manufacturing.
Referring to fig. 1, a chip structure according to an embodiment of the utility model includes: the first chip module 100, the second chip module 200, and the bonding die block 300.
Wherein the first chip module 100 includes: a first substrate 101, a plurality of first P electrodes 102, and a first N electrode 103; the plurality of first P electrodes 102 and the first N electrode 103 are connected to the first surface of the first substrate 101; the second chip module 200 is bonded to the plurality of first P electrodes 102 and the first N electrode 103 through the bonding module 300.
In a specific example, the material of the first substrate is gallium nitride, the substrate is connected with the plurality of first P electrodes and the first N electrode to form a plurality of pixel units, the pixel units are separated by grooves, and the N electrode can realize common N connection of the pixel units by the grooves.
In one example, the bonding module in the embodiment of the utility model is in a plurality of eutectic bonding structures, and the bonding structures are made of indium or tin materials. And a plurality of first P electrodes and second N electrodes on the substrate are bonded with the second chip module through the eutectic bonding structure. So that the structure in the chip can realize the electrical communication with the P electrodes and the N electrodes through the bonding structure. In addition, the thickness of the bonding module in the embodiment of the utility model is more than 1 micrometer. The method is used for better realizing the electric connection with the plurality of first P electrodes and the second N electrodes.
Of course, the present utility model is not limited to the form of bonding structure, and other structures capable of bonding the plurality of first P electrodes with the second N electrode and the second chip module and realizing conductivity are within the scope of the present utility model.
Referring to fig. 2, in an embodiment of the present utility model, the flip-chip thin film chip structure further includes: a light transmission module 400; the light transmitting module 400 is connected to the second surface of the first substrate 101.
The material of the light transmission module in the embodiment of the utility model at least comprises: the light-emitting rate of the flip film chip can be improved by using the materials.
When the light-transmitting module is made of glass, a plurality of lens structures are manufactured on the second surface of the first substrate and corresponding to the P-electrodes and the N-electrodes, wherein the lens structures can be in a truncated cone shape, an oval shape and the like and are used for improving the light-gathering effect and the light-emitting rate of the flip film chip.
When the light-transmitting module is made of fluorescent powder, the light-emitting rate of the flip film chip can be improved by directly coating the fluorescent powder on the second surface of the first substrate.
With continued reference to fig. 2, a second chip module 200 according to an embodiment of the present utility model includes: a substrate 201, an insulating layer 202, a first connection terminal 203, and a second connection terminal 204; the first connection terminal 203 and the second connection terminal 204 are connected with the substrate 201 through the insulating layer 202, wherein a plurality of through holes are formed in the substrate 201, the plurality of through holes penetrate through the substrate, and the plurality of through holes are filled with a first metal material 2011; the first ends of the through holes are connected with the first P electrodes 102 and the first N electrodes 103 in a one-to-one correspondence manner; and the second ends of the through holes connected with the plurality of first P electrodes 102 are communicated through the second metal material 2012.
In one example, the substrate is made of a material that is highly thermally conductive and insulating, and in a preferred embodiment of the present utility model, the substrate is made of a ceramic material, such as a thermally conductive ceramic substrate. It is understood that the present utility model is not limited to the material of the substrate, and other insulating materials capable of implementing heat conduction are all within the scope of the present utility model.
A first metal channel 2021 and a second metal channel 2022 penetrating the insulating layer 202 are provided in the insulating layer; and the number of the first metal channels is at least one, the first metal channels 2021 are connected with the first metal material 2011. The second metal path 2022 is connected to the second end of the via hole to which the first N electrode 103 is connected, and the number of the second metal paths is one in the embodiment of the present utility model. The N interconnection area of the flip film chip corresponds to the insulation part on the insulation layer, so that the problem of poor products caused by poor uniform process on the chip is solved.
In addition, through the circuit design of the first metal channel and the second metal channel on the insulating layer insulating substrate, the serial-parallel connection design of the chips can be realized, and the process difficulty of the serial-parallel connection chips is reduced.
In the embodiment of the present utility model, the material of the insulating layer is white glue, and of course, the present utility model is not limited to the material of the insulating layer, other materials capable of realizing insulation can be used, and the material can also be used for etching the through hole inside and filling other metal materials or materials in a combination form, which are all within the protection scope of the present utility model.
The first metal material and the second metal material in the embodiment of the utility model are consistent; the first metal material and the second metal material may include at least: ni, ag, al, ti, pt, cr, ti, wu, au, in or Sn.
In addition, the first connection terminal in the embodiment of the utility model is a P-PAD; the second connection terminal is an N-PAD. And, the thickness range of the first connecting terminal and the second connecting terminal is: 200nm-4um. The flip film chip structure can be more conveniently combined with other devices.
According to the flip film chip structure provided by the utility model, the plurality of first P electrodes and the first N electrodes are directly connected through the substrate, the substrate is connected with the insulating layer, the substrate is an insulating substrate with high heat conduction, the first metal material and the second metal material are arranged in the substrate to be communicated with the plurality of first P electrodes and the first N electrodes, and the first metal channel and the second metal channel which are communicated with the first metal material and the second metal material are arranged on the insulating layer, so that the connection between the plurality of P electrodes and the first N electrodes and the first connecting terminal and the second connecting terminal is realized, and the high-power large-current inflow is realized through the flip film chip structure provided by the utility model. And a plurality of first P electrodes and second N electrodes are directly connected with the insulating layer, so that the problem of low device yield caused by insulating treatment of the electrodes in the prior art is solved.
In the description of the present specification, the descriptions of the terms "one embodiment," "an embodiment," "a particular implementation," "an example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and not for limiting the same; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the utility model.
Claims (13)
1. A flip-chip thin film chip structure, comprising:
the device comprises a first chip module, a second chip module and a bonding module;
wherein the first chip module includes: the device comprises a first substrate, a plurality of first P electrodes and first N electrodes;
the plurality of first P electrodes and the first N electrode are connected with the first surface of the first substrate; the second chip module is bonded with the plurality of first P electrodes and the first N electrodes through the bonding module;
the second chip module includes: a substrate, an insulating layer, a first connection terminal, and a second connection terminal; the first connection terminal and the second connection terminal are connected with the substrate through the insulating layer;
wherein, a plurality of through holes are arranged in the substrate, the through holes penetrate through the substrate, and the through holes are filled with a first metal material; the first ends of the through holes are connected with the first P electrodes and the first N electrodes in a one-to-one correspondence manner; and the second ends of the through holes connected with the plurality of first P electrodes are communicated through a second metal material;
a first metal channel and a second metal channel which penetrate through the insulating layer are arranged in the insulating layer; the first metal channel is connected with the first metal material; the second metal channel is connected with a second end of the through hole connected with the first N electrode.
2. The flip chip film structure of claim 1, wherein,
the flip film chip structure further includes: a light transmission module;
the light transmission module is connected with the second surface of the first substrate.
3. The flip-chip film structure of claim 2, wherein,
the material of the light-transmitting module may include at least: glass or phosphor materials.
4. The flip chip film structure of claim 1, wherein,
the substrate is made of ceramic materials.
5. The flip chip film structure of claim 1, wherein,
the first metal material is consistent with the second metal material;
the first metal material and the second metal material may include at least: ni, ag, al, ti, pt, cr, wu, au, in or Sn.
6. The flip chip film structure of claim 1, wherein,
the number of the first metal channels is at least one.
7. The flip chip film structure of claim 1, wherein,
the number of the second metal channels is one.
8. The flip chip film structure of claim 1, wherein,
the bonding module has a thickness of greater than 1 micron.
9. The flip-chip film structure of claim 7, wherein,
the bonding module is made of the following materials: indium or tin or silver material.
10. The flip chip film structure of claim 1, wherein,
the material of the first substrate is gallium nitride.
11. The flip chip film structure of claim 1, wherein,
the insulating layer is made of the following materials: white glue, silicon oxide, silicon nitride, aluminum oxide, epoxy or polyimide.
12. The flip chip film structure of claim 1, wherein,
the first connecting terminal is a P-PAD; the second connection terminal is an N-PAD.
13. The flip chip film structure of claim 1, wherein,
the thickness range of the first connecting terminal and the second connecting terminal is as follows: 200nm-4um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320110383.2U CN219370968U (en) | 2023-01-19 | 2023-01-19 | Flip film chip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320110383.2U CN219370968U (en) | 2023-01-19 | 2023-01-19 | Flip film chip structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219370968U true CN219370968U (en) | 2023-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202320110383.2U Active CN219370968U (en) | 2023-01-19 | 2023-01-19 | Flip film chip structure |
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| CN (1) | CN219370968U (en) |
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- 2023-01-19 CN CN202320110383.2U patent/CN219370968U/en active Active
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