US20180231894A1 - Substrate treating method and apparatus used therefor - Google Patents

Substrate treating method and apparatus used therefor Download PDF

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Publication number
US20180231894A1
US20180231894A1 US15/856,486 US201715856486A US2018231894A1 US 20180231894 A1 US20180231894 A1 US 20180231894A1 US 201715856486 A US201715856486 A US 201715856486A US 2018231894 A1 US2018231894 A1 US 2018231894A1
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United States
Prior art keywords
heat treating
substrate
exhaust
inert gas
heat
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Abandoned
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US15/856,486
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English (en)
Inventor
Yasuhiro Fukumoto
Yuji Tanaka
Takeharu Ishii
Tomohiro Matsuo
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Assigned to SCREEN Holdings Co., Ltd. reassignment SCREEN Holdings Co., Ltd. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TANAKA, YUJI, ISHII, Takeharu, MATSUO, TOMOHIRO, FUKUMOTO, YASUHIRO
Publication of US20180231894A1 publication Critical patent/US20180231894A1/en
Priority to US16/871,105 priority Critical patent/US11143964B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • the present invention relates to a substrate treating method and an apparatus used therefor for performing a heat treatment of a semiconductor wafer, a substrate for liquid crystal display, a substrate for flat panel display (FPD) like a substrate for organic electroluminescence (EL), a substrate for optical display, a magnetic disk substrate, an optical magnetic disk substrate, a substrate for photomask, and a solar cell substrate (hereinafter, simply referred to as a substrate).
  • a substrate for liquid crystal display
  • FPD flat panel display
  • EL organic electroluminescence
  • a substrate for optical display a magnetic disk substrate, an optical magnetic disk substrate, a substrate for photomask
  • a solar cell substrate hereinafter, simply referred to as a substrate.
  • DSA directed self-assembly
  • a block co-polymer (BCP) is applied to a substrate for deposition of a treated film, and thereafter, a heat treatment of heating the treated film on the substrate is performed in a heat treating space of a heat treating chamber, whereby (phase) separation of two types of polymers in the treated film is performed. Then, etching is performed to one of the (phase) separated polymers, whereby fine patterns are formed.
  • BCP block co-polymer
  • such a problem may arise as the polymer in the treated film is not able to be separated appropriately depending on a treatment atmosphere in the heat treating space.
  • the deposited film may pose some difficulty in its property and performance depending on a treatment atmosphere in the heat treating space also during a process of performing heat treatment of the substrate within the heat treating chamber other than the DSA process, the process including process of depositing a film by a heat treatment after a spin on glass (SOG) solution is applied to the substrate.
  • SOG spin on glass
  • the present invention has been made regarding the state of the art noted above, and its one object is to provide a substrate treating method and an apparatus used therefor that allow appropriate film deposition by producing a suitable treatment atmosphere in a heat treating space in a heat treating process.
  • One aspect of the present invention provides a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber.
  • the method includes an exhaust step of exhausting gas within the heat treating space formed by a cover enclosing surroundings of a heat treating plate; an inert gas supply step of supplying inert gas into the heat treating space from an upper portion of the heat treating space and supplying inert gas into a gap between an outer peripheral surface of the heat treating plate and an inner wall of the cover; and a heat treating step of performing the heat treatment of the substrate in the heat treating space, the heat treating step being performed after the exhaust step and the inert gas supply step.
  • the exhaust step is performed to exhaust the gas within the heat treating space.
  • the inert gas supply step is performed to supply the inert gas from the upper portion of the heat treating space, and to supply the inert gas into the gap between the outer peripheral surface of the heat treating plate and the inner wall of the cover.
  • the gap between the outer peripheral surface of the heat treating plate and the inner wall of the cover is narrow, and oxygen stagnated in the gap is not able to be replaced sufficiently only with the supply of the inert gas from the upper portion of the heat treating space.
  • the inert gas is also supplied to the gap. Consequently, the oxygen stagnated in the gap is able to be replaced by the inert gas, achieving an extremely lowered oxygen concentration in the heat treating space.
  • the treatment atmosphere within the heat treating space during the heat treating step is able to be made suitable for the heat treating process, leading to appropriate film deposition.
  • the heat treating step is performed while exhaust from through holes into which support pins moving forward/backward from the heat treating plate are inserted is only performed and exhaust from an exhaust port of the cover stops.
  • the exhaust from the through holes located adjacent to a lower surface of the substrate is only performed, achieving stable airflow in the heat treatment atmosphere around a top face of the substrate. Consequently, a heat treatment of a treated film is performable in a stable manner.
  • the treated film is made from a directed self-assembly material.
  • the apparatus includes a heat treating plate where the substrate to be treated is placed; a cover that is erected outwardly from an outer peripheral surface of the heat treating plate by a gap, and encloses surroundings of the heat treating plate to form a heat treating space inside thereof; an upper inert gas supplying device that supplies inert gas from an upper portion of the heat treating space into the heat treating space; openings formed in the cover in communication with the gap; a lower inert gas supplying device that supplies inert gas into the openings; an exhaust device that exhausts gas within the heat treating space; and a controller that causes the exhaust device to exhaust the gas within the heat treating space, and causes the upper inert gas supplying device and the lower inert gas supplying device to supply the inert gas, and thereafter performs the heat treatment of the substrate placed on the heat treating plate.
  • the controller causes the exhaust device to exhaust the gas within the heat treating space, and causes the upper inert gas supplying device and the lower inert gas supplying device to supply the inert gas.
  • the inert gas is supplied from the upper portion of the heat treating space and the openings in communication with the gap between the outer peripheral surface of the heat treating plate and the cover. Accordingly, oxygen stagnated in the gap is able to be replaced by the inert gas, achieving an extremely lowered oxygen concentration in the heat treating space.
  • the treatment atmosphere within the heat treating space during the heat treating step is able to be made suitable for the heat treating process, leading to appropriate film deposition.
  • the cover includes the openings formed therein at two positions that are opposite to each other across the center of the heat treating plate in plan view.
  • the inert gas is supplied from the openings at the two positions opposite to each other, an enough amount of the inert gas is able to be supplied to the entire periphery of the gap in contrast to a situation where the inert gas is supplied from one position. Consequently, oxygen stagnated into the gap is able to be replaced sufficiently by the inert gas.
  • the heat treating plate includes through holes into which support pins for delivering the substrate are inserted in communication with the heat treating space
  • the cover includes an exhaust port in communication with the heat treating space
  • the exhaust device performs exhaust from the through holes and exhaust from the exhaust port
  • the controller performs the heat treatment of the substrate while causing the exhaust device to stop the exhaust from the exhaust port and to perform only the exhaust from the through holes.
  • the controller performs the heat treatment of the substrate while causing the exhaust device to stop the exhaust from the exhaust port and to perform the exhaust from only the through holes.
  • the exhaust is performed only from the through holes adjacent to the lower surface of the substrate, leading to stable airflow in the heat treatment atmosphere around the top face of the substrate. Consequently, the heat treatment of the treated film is able to be performed in a stable manner.
  • FIG. 1 schematically illustrates an overall configuration of a substrate treating apparatus according to one embodiment of the present invention.
  • FIG. 2 is a plan view around a heat treating plate.
  • FIG. 3 is a longitudinal sectional view around the heat treating plate.
  • FIG. 4 is a time chart illustrating one example of treating a substrate according to the embodiment.
  • FIG. 1 schematically illustrates an overall configuration of a substrate treating apparatus according to one embodiment of the present invention.
  • FIG. 2 is a plan view around a heat treating plate
  • FIG. 3 is a longitudinal sectional view around the heat treating plate.
  • the substrate treating apparatus for executing a substrate treating method is used for performing a heat treatment of a substrate W.
  • the substrate W in the present embodiment include one having a treated film made from a directed self-assembly material deposited on a front face thereof.
  • the substrate treating apparatus includes a heat treatment plate unit 1 , a heat treating chamber 3 , an upper gas supply unit 5 , a shutter 7 , a chamber exhaust unit 9 , a support pin lifting member 11 , a lower gas supply unit 13 , a support pin seal exhaust unit 15 , a controller 17 , and a setting unit 19 .
  • the heat treatment plate unit 1 places the substrate W on its top face for performing a heat treatment of the substrate W.
  • the heat treatment plate unit 1 includes a base plate 21 , a heat treating plate 23 , and a heater 25 .
  • the base plate 21 is attached to a lower part of the heat treating plate 23 , and is also attached to a lower part of the heat treating chamber 3 together with the heat treating plate 23 .
  • the heat treating plate 23 is composed of a material whose base material is a metal, such as copper (Cu) and aluminum (Al), with a high thermal conductivity.
  • the heater 25 is embedded in the heat treating plate 23 , and controls a temperature of the heat treating plate 23 . For instance, the heater 25 controls a temperature of the heat treating plate 23 within a range of 300 to 400° C.
  • the heat treating plate 23 has proximity balls, not shown, embedded in its top face for locating a rear face of the substrate W away from a top face of the heat treating plate 23 by a given interval (e.g., 0.1
  • the heat treating plate 23 has through holes 27 formed at positions corresponding to vertexes of a regular triangle in plan view.
  • the through holes 27 each pass from the top face to the rear face of the heat treating plate 23 , and also pass through the base plate 21 . Holder pins mentioned later are inserted into the through holes 27 , respectively.
  • a topside plate supply port 29 passing the heat treating plate 23 and the base plate 21 in a vertical direction is formed around the center of the heat treating plate 23 .
  • the heat treating chamber 3 includes a cover 31 .
  • the cover 31 includes an opening at a lower portion thereof, and the heat treatment plate unit 1 is attached to the opening.
  • the cover 31 shows a shape that covers a lateral side and an upper side of the heat treatment plate unit 1 .
  • a space is formed between the ceiling of the cover 31 and the top face of the heat treating plate 23 . The space corresponds to a heat treating space HS.
  • the cover 31 has a load outlet 33 formed on a first side face thereof.
  • the load outlet 33 is used for loading a substrate W to be treated into the heat treating space HS and unloading the treated substrate W from the heat treating space HS.
  • a cooling pipe 35 is attached around the load outlet 33 .
  • the cooling pipe 35 cools the cover 31 with cooling water supplied thereto, and protects an O-ring around the load outlet 33 .
  • the cover 31 has an exhaust port 37 formed on a second side face thereof, which is opposite to the load outlet 33 .
  • the exhaust port 37 is used for exhausting gas within the cover 31 .
  • the exhaust port 37 has a flow path sectional area corresponding to a vertical sectional area of the heat treating space HS.
  • An exhaust port cover 39 is removably attached to the outside of the exhaust port 37 via the O-ring.
  • the ceiling of the cover 31 includes a plurality of through holes 41 .
  • An annular gap 43 in plan view is present between the heat treatment plate unit 1 and an outer peripheral surface of the heat treating plate 23 of the cover 31 around the heat treatment plate unit 1 .
  • a side face of the cover 31 facing to the gap 43 has openings 45 each in communication with the gap 43 .
  • the openings 45 are, for example, formed at two positions opposite to each other across the center of the heat treating plate 23 in plan view as in FIG. 2 .
  • the cooling pipe 35 is disposed at an outer face of the cover 31 below the openings 45 as in FIGS. 1 and 3 .
  • the cooling pipe 35 protects the O-ring between the cover 31 and the base plate 21 .
  • the lower gas supply unit 13 supplies nitrogen gas into the openings 45 and the topside plate supply port 29 .
  • the lower gas supply unit 13 includes a plurality of flow rate regulating valves or on-off valves for allowing regulation of a flow rate of the nitrogen gas.
  • the exhaust port 37 exhausts gas through the exhaust port having the flow path sectional area corresponding to the vertical sectional area of the heat treating space HS, leading to efficient exhaust.
  • the lower gas supply unit 13 corresponds to the “lower inert gas supplying device” in the present invention.
  • a pressure sensor 47 is disposed above the cover 31 adjacent to the load outlet 33 .
  • An oxygen concentration sensor 49 is disposed above the cover 31 adjacent to the exhaust port 37 .
  • the pressure sensor 47 determines pressure within the heat treating space HS.
  • the oxygen concentration sensor 49 determines an oxygen concentration within the heat treating space HS. As is described hereunder, it should be noted that the oxygen concentration sensor 49 is only used when an examination to determine lapsed time during which the oxygen concentration is lowered to a target value or less, and accordingly, the oxygen concentration sensor 49 is not necessarily provided during normal treatment.
  • a gas supply buffer 51 is disposed above the cover 31 .
  • nitrogen (N 2 ) gas supplied from the center of the top face of the cover 31 is supplied from an underside opening of the cover 31 , having a larger area than the center of the top face, through a plurality of through holes 41 into the heat treating space HS.
  • An O-ring is disposed between the top face of the cover 31 and an under face of the gas supply buffer 51 .
  • Another, cooling pipe 35 is disposed inside of the gas supply buffer 51 . The cooling pipe 35 protects the O-ring.
  • the upper gas supply unit 5 supplies nitrogen gas as inert gas into the gas supply buffer 51 mentioned above.
  • the upper gas supply unit 5 includes two flow rate regulating valves, for example, that allow switch of a flow rate of the nitrogen gas in two steps.
  • the gas supply buffer 51 corresponds to the “upper inert gas supplying device” in the present invention.
  • the shutter 7 is disposed on a front face of the load outlet 33 .
  • the shutter 7 includes the load outlet 33 , a shutter body 57 , and an actuator 59 .
  • the shutter body 57 is lifted by the actuator 59 whose actuating pieces move upwardly/downwardly in a vertical direction.
  • the shutter body 57 closes the load outlet 33 via the O-ring when moving upwardly.
  • the actuator 59 is brought into an actuated state
  • the shutter body 57 moves to a position denoted by solid lines in FIG. 1 to close the load outlet 33 .
  • the actuator 59 When the actuator 59 is brought into a non-actuated state, the shutter body 57 moves downwardly to a position denoted by chain double-dashed lines in FIG. 1 to open the load outlet 33 .
  • the chamber exhaust unit 9 exhausts gas within the heat treating space HS via the exhaust port cover 39 mentioned above.
  • the chamber exhaust unit 9 includes a plurality of on-off valves, flow rate regulating valves, aspirators, and the like, for exhausting the gas within the heat treating space HS by supplying air from an air supplying source. It should be noted that the chamber exhaust unit 9 may be formed by an exhaust pump and the like instead of the aspirators and the air supplying source.
  • the support pin lifting member 11 includes three support pins 61 (two of which are only denoted in FIG. 1 for an illustrational reason), a manifold 63 , mechanical seals 65 , a lifting member 67 , and an actuator 69 .
  • the support pins 61 are inserted into the through holes 27 , respectively.
  • the support pins 61 pass through the manifold 63 and are coupled at lower ends thereof to the lifting member 67 via the mechanical seals 65 .
  • An O-ring is attached between the top face of the manifold 63 and the base plate 21 so as to surround each of the through holes 27 .
  • Upper ends of the mechanical seals 65 are attached to an under face of the manifold 63 .
  • the mechanical seals 65 are metal seals that allow upward/downward movement of the support pins 61 while supporting outer peripheral surfaces of the support pins 61 in a sealing manner.
  • the manifold 63 shows a triangle shape in plan view, and has one space formed therein.
  • the manifold 63 has an exhaust port 71 formed at one region thereof in communication with the space.
  • the lifting member 67 shows an annular shape in plan view, and is moved upwardly/downwardly by the actuator 69 .
  • the actuator 69 is disposed in an attitude where the actuating pieces are moved forward/backward in the vertical direction.
  • the support pins 61 project to move to the delivery position denoted by chain double-dashed lines in FIG. 1 .
  • the actuator 69 is brought into a non-actuated state, the support pins 61 moves to the retracted position denoted by solid lines in FIG. 1 .
  • the substrate W is placed on the top face of the heat treating plate 23 .
  • the support pin seal exhaust unit 15 exhausts gas from an exhaust port 71 of the manifold 63 .
  • the support pin seal exhaust unit 15 includes a plurality of on-off valves, flow rate regulating valves, aspirators, and the like for exhausting gas within the heat treating space HS through the manifold 63 and the through holes 27 by supplying air from an air supplying source. In addition, dust generated on the mechanical seals 65 is discharged simultaneously.
  • the support pin seal exhaust unit 15 may be formed by a vacuum pump instead of the aspirators and the air supplying source.
  • the support pin seal exhaust unit 15 exhausts gas from the through holes 27 that are formed near a position where the substrate W is placed during the heat treatment. This achieves effective reduction in oxygen concentration around the substrate W that may influence film deposition largely during the heat treatment. Moreover, since the dust generated due to slide of the support pins 61 on the mechanical seals 65 is discharged without entering into the heat treating space HS, the substrate W is able to be treated cleanly.
  • the through holes 27 and the exhaust port 37 correspond to the “exhaust device” in the present invention.
  • the upper gas supply unit 5 , the chamber exhaust unit 9 , the lower gas supply unit 13 , the support pin seal exhaust unit 15 , and the actuators 59 , 69 are controlled en bloc by a controller 17 .
  • the controller 17 contains a CPU, a memory, and a timer, each of which is not shown.
  • the controller 17 causes the memory, not shown, to store in advance a plurality of recipes that specific procedures of the heat treatment.
  • the setting unit 19 is operated by an operator to select one of the recipes and to provide an instruction for starting treatment or for operation when an alarm is given.
  • the memory not shown stores in advance a chamber exhaust time, a heat treatment shifting time, a heat treating time, a cooling time, and the like, and such time is referred to by the controller 17 as appropriately.
  • the heat treatment shifting time is lapsed time from an exhaust starting time when the oxygen concentration within the heat treating space HS is lowered to the target value or less in the heat treatment, which is to be mentioned later. This time is measured and determined in advance through examinations while the oxygen concentration sensor 49 is provided.
  • FIG. 4 is a time chart illustrating one example of treating a substrate according to the embodiment.
  • pressure within the heat treating space HS is denoted by solid lines
  • an oxygen concentration in the heat treating space HS is denoted by dotted lines in the time chart of FIG. 4 .
  • the controller 17 causes the support pin seal exhaust unit 15 to start exhaust from the exhaust port 71 , and causes the chamber exhaust unit 9 to start exhaust from the exhaust port 37 . Accordingly, gas within the heat treating space HS starts to be exhausted, and pressure is sharply decreased to ⁇ p3 kPa at time t 1 as the chamber exhaust time.
  • the condition to make the pressure decreased to ⁇ p3 kPa at the time t 1 as the chamber exhaust time is determined in advance through various examinations of adjusting an exhaust amount from the chamber exhaust unit 9 and the support pin seal exhaust unit 15 . Simultaneously, the controller 17 also starts clocking. Such sharp exhaust produces the effect of preventing air from entering from the outside into the heat treating space HS by causing the shutter body 57 to adhere to the O-ring of the load outlet 33 tightly.
  • the controller 17 After clocking the time t 1 as the chamber exhaust time, the controller 17 causes the upper gas supply unit 5 and the lower gas supply unit 13 to start supply of nitrogen gas. Accordingly, pressure within the heat treating space HS moves back sharply to the atmospheric pressure while negative pressure of around ⁇ p 1 kPa is maintained. This is achieved by making the supply amount of nitrogen gas from the upper gas supply unit 5 and the lower gas supply unit 13 less than the exhaust amount from the chamber exhaust unit 9 and the support pin seal exhaust unit 15 . During a period of the time t 1 to time t 7 , the oxygen concentration is lowered through the exhaust and the supply of the nitrogen gas.
  • the negative pressure is maintained with the exhaust amount larger than the supply amount of the nitrogen gas.
  • the oxygen stagnated at corners within the heat treating chamber 3 and the like is discharged by flow of the nitrogen gas more easily than by flow of the exhaust. Accordingly, this achieves more reduction in oxygen concentration.
  • the controller 17 causes the chamber exhaust unit 9 to stop at the time t 7 corresponding to time after a given period of time from the time 0 , and the processing is shifted to exhaust via the through holes 27 (support pin seal exhaust) and reduction in oxygen concentration by purge of supplying nitrogen gas from the upper gas supply unit 5 and the lower gas supply unit 13 . This reduces a flow rate of exhaust, leading to variation in pressure of the heat treating space HS toward the atmospheric pressure to maintain the pressurized space.
  • oxygen may possibly be stagnated in the gap 43 around the heat treating plate 23 .
  • supplying nitrogen gas from the openings 45 leads to exhaust of the stagnated oxygen along with the flow of the nitrogen gas as in FIG. 3 . Consequently, an extremely lowered oxygen concentration is obtainable in the heat treating space HS.
  • the controller 17 causes the support pins 61 to move downwardly to shift the processing to the heat treatment.
  • chamber exhaust is stopped and exhaust via the through holes 27 (support pin seal exhaust) and supply of the nitrogen gas are performed, leading to flow variation within the heat treating space HS until the time t 7 . Accordingly, discharge of the oxygen stagnated in the heat treating space HS is obtainable along with the flow variation, achieving a more lowered oxygen concentration.
  • the period of the time t 1 to the time t 9 mentioned above corresponds to the “exhaust step” and the “inert gas supply step” in the present invention.
  • the controller 17 When the time has reached the heat treatment shifting time, the controller 17 causes the actuator 69 to be brought into a non-actuated state, and causes the support pins 61 to move downwardly to the retracted position. Accordingly, the substrate W is placed on the top face of the heat treating plate 23 , and the heat treatment of the substrate W is started.
  • the controller 17 starts clocking and maintains this condition until time t 10 at which the time reaches the heat treating time.
  • the oxygen concentration in the heat treating space HS is lowered to 100 ppm or less as the target value.
  • the process is able to be shifted to the heat treatment by merely measuring the heat treating time without using any oxygen concentration meter 49 . This achieves the simplified configuration of the substrate treating apparatus, leading to reduction in cost needed for the processing.
  • the controller 17 causes the actuator 69 to actuate at the time t 10 to move the support pins 61 upwardly. Accordingly, the substrate W is moved away from the heat treating plate 23 to the delivery position.
  • the controller 17 causes the chamber exhaust unit 9 to actuate to start exhaust from the exhaust port 37 , and to start clocking. This causes cooling of the substrate W.
  • the period of time t 9 to t 10 corresponds to the “heat treating step” in the present invention.
  • the controller 17 causes the chamber exhaust unit 9 , the upper gas supply unit 5 , and the lower gas supply unit 13 at the time t 11 to stop. Then, the actuator 59 is brought into a non-actuation condition, and the shutter body 57 is moved downwardly for unloading the substrate W.
  • the gas within the heat treating space HS is exhausted.
  • the nitrogen gas is supplied from the upper portion of the heat treating space HS and from the openings 45 to the gap 43 between the outer peripheral surface of the heat treating plate 23 and the inner wall of the cover 31 .
  • the gap 43 between the outer peripheral surface of the heat treating plate 23 and the inner wall of the cover 31 is narrow, and oxygen stagnated in the gap 43 is not able to be replaced sufficiently only with the supply of the inert gas from the upper portion of the heat treating space.
  • the nitrogen gas is also supplied from the openings 45 to the gap 43 . Consequently, oxygen stagnated in the gap 43 is also able to be replaced by the nitrogen gas, achieving an extremely lowered oxygen concentration in the heat treating space HS.
  • the treatment atmosphere within the heat treating space HS is able to be made suitable for the heat treating process, leading to appropriate film deposition.
  • the substrate W has a treated film coated thereon that is made from a directed self-assembly material.
  • a substrate W is not limitative in the present invention.
  • the present invention is applicable to the treatment that the oxygen concentration in the heat treating space HS adversely affects, such as treatment for a substrate to which a spin on glass (SOG) solution is applied.
  • SOG spin on glass
  • the openings 45 are formed at the two positions opposite to each other across the center of the heat treating plate 23 in plan view. However, such is not limitative in the present invention. For instance, the openings 45 may be formed at three or more positions. Alternatively, the openings 45 are not necessarily formed at the position opposite to each other across the center of the heat treating plate 23 .
  • the exhaust from the exhaust port 37 stops in the heat treating step.
  • the exhaust from the exhaust port 37 may be successively performed as long as no influence is exerted on the film deposition. This achieves simplified control.
  • nitrogen gas has been described as one example of the inert gas.
  • another type of inert gas such as argon or helium may be used.

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  • Microelectronics & Electronic Packaging (AREA)
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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CN112902649B (zh) * 2021-03-10 2023-03-17 苏州晶洲装备科技有限公司 一种干燥方法及干燥装置
CN117219561B (zh) * 2023-11-09 2024-02-09 合肥晶合集成电路股份有限公司 降低harp工艺中晶圆滑片风险的方法

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JP2018133408A (ja) 2018-08-23
KR102118781B1 (ko) 2020-06-03
US11143964B2 (en) 2021-10-12
TWI655672B (zh) 2019-04-01
JP6987507B2 (ja) 2022-01-05
CN108428616A (zh) 2018-08-21
TW201834013A (zh) 2018-09-16
KR20190099543A (ko) 2019-08-28
CN108428616B (zh) 2022-08-02

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