US20180211991A1 - Light emitting diode display and fabricating method thereof - Google Patents

Light emitting diode display and fabricating method thereof Download PDF

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Publication number
US20180211991A1
US20180211991A1 US15/596,763 US201715596763A US2018211991A1 US 20180211991 A1 US20180211991 A1 US 20180211991A1 US 201715596763 A US201715596763 A US 201715596763A US 2018211991 A1 US2018211991 A1 US 2018211991A1
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Prior art keywords
light emitting
substrate
emitting diode
emitting diodes
insulation layer
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US15/596,763
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English (en)
Inventor
Jui-Chieh HSIANG
Hsu-Hsiang Tseng
Chih-Chiang Chen
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Acer Inc
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Acer Inc
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Assigned to ACER INCORPORATED reassignment ACER INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, CHIH-CHIANG, TSENG, HSU-HSIANG, HSIANG, JUI-CHIEH
Priority to US16/045,751 priority Critical patent/US10636835B2/en
Publication of US20180211991A1 publication Critical patent/US20180211991A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H01L33/0079—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the invention relates to a display and a fabricating method thereof, and particularly relates to a light emitting diode display and a fabricating method thereof.
  • a light emitting diode display includes a plurality of light emitting diodes and a drive circuit substrate with a switch device.
  • the plurality of light emitting diodes are required to be transferred onto the drive circuit substrate, and the plurality of light emitting diodes are electrically connected to the drive circuit substrate.
  • the method of transposing the light emitting diodes includes a mass transfer method and a wafer transfer method.
  • the mass transfer method is to dispose the plurality of light emitting diodes on a growth substrate onto the drive circuit substrate using a flexible transferring head.
  • the flexible transferring head needs to have a special structural design and perform picking up and disposing actions several times to complete the transposition of the light emitting diodes.
  • the wafer transfer method is to transfer the wafer and the plurality of light emitting diodes grown on the wafer onto the drive circuit substrate together, and the plurality of light emitting diodes on the wafer are electrically connected to the drive circuit substrate.
  • the wafer e.g., sapphire substrate
  • the wafer needs to be removed, so that the yield of the light emitting diode display is low.
  • the invention provides a light emitting diode display and a fabricating method thereof with high yield.
  • the invention provides a light emitting diode display including at least one light emitting diode chip.
  • Each of the light emitting diode chips includes a first substrate, a plurality of light emitting diodes disposed on the first substrate, a first insulation layer covering the plurality of light emitting diodes and a plurality of switch devices disposed on the first insulation layer and electrically connected to the plurality of light emitting diodes.
  • the first insulation layer has a plurality of first contact holes exposing the plurality of light emitting diodes.
  • the plurality of switch devices are electrically connected to the plurality of light emitting diodes via the plurality of first contact holes.
  • each of the light emitting diodes includes a first type semiconductor layer, a second type semiconductor layer opposite to the first type semiconductor layer and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer.
  • the switch devices are electrically connected to a plurality of the first type semiconductor layers of the plurality of light emitting diodes via the plurality of first contact holes.
  • each of the light emitting diode chips further includes a plurality of conductive patterns.
  • the plurality of conductive patterns are disposed on the first insulation layer.
  • the first insulation layer further has a plurality of second contact holes exposing the light emitting diodes and being separated from the first contact holes.
  • the conductive patterns are electrically connected to the second type semiconductor layers of the light emitting diodes via the second contact holes.
  • the first substrate has a groove, and the light emitting diodes are disposed in the groove.
  • each of the light emitting diode chips further includes a second substrate.
  • the light emitting diodes are formed on the second substrate.
  • the second substrate and the light emitting diodes are disposed on the first substrate, and the second substrate is located between the light emitting diodes and the first substrate.
  • the first substrate has a groove
  • the second substrate and the light emitting diodes are disposed in the groove.
  • the first insulation layer completely covers the first substrate.
  • the first insulation layer partially covers the first substrate.
  • two adjacent light emitting diodes have a gap therebetween, such that the plurality of light emitting diodes are separated from each other.
  • the gap corresponds to a portion of the first substrate, and the first insulation layer uncovers the portion of the first substrate.
  • each of the light emitting diode chips further includes a second insulation layer covering the switch devices.
  • each of the light emitting diode chips further includes a third substrate covering the second insulation layer.
  • the invention provides a fabricating method of a light emitting diode display including the following steps.
  • a first substrate and a plurality of light emitting diodes disposed on the first substrate are provided.
  • a first insulation layer is formed to cover the light emitting diodes.
  • a plurality of switch devices are formed on the first insulation layer. The switch devices are electrically connected to the light emitting diodes.
  • the fabricating method of the light emitting diode display further includes the following steps.
  • the plurality of light emitting diodes are formed on a second substrate.
  • the second substrate is located between the light emitting diodes and the first substrate.
  • the fabricating method of the light emitting diode display further includes the following steps.
  • the plurality of light emitting diodes are formed on the second substrate.
  • To make a third substrate pick up the light emitting diodes and the second substrate.
  • the second substrate is removed.
  • To make the third substrate dispose the light emitting diodes on the first substrate.
  • the fabricating method of the light emitting diode display further includes the following step.
  • a second insulation layer is formed to cover the plurality of switch devices.
  • the fabricating method of the light emitting diode display further includes the following steps. To make the second insulation layer, the switch devices, the first insulation layer, the light emitting diodes and the first substrate be fixed on a fourth substrate. The second insulation layer is located between the fourth substrate and the first insulation layer. The first substrate is removed.
  • the fabricating method of the light emitting diode display further includes the following step. After the first substrate is removed, to make the fourth substrate and the second insulation layer be separated from each other.
  • the insulation layer is formed on the substrate carrying the plurality of light emitting diodes to cover the plurality of light emitting diodes. Then, the plurality of switch devices electrically connected to the plurality of light emitting diodes are formed on the insulation layer.
  • the light emitting diodes are not required to be transferred onto a drive circuit substrate with the switch device, thereby enhancing the yield of the light emitting diode display.
  • FIG. 1A to FIG. 1H are schematic cross-sectional views of a fabricating method of a light emitting diode display according to an embodiment of the invention.
  • FIG. 2A to FIG. 2F are schematic cross-sectional views of a fabricating method of a light emitting diode display according to an embodiment of the invention.
  • FIG. 3 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • FIG. 4 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • FIG. 5 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • FIG. 6 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • FIG. 1A to FIG. 1H are schematic cross-sectional views of a fabricating method of a light emitting diode display according to an embodiment of the invention.
  • a plurality of light emitting diodes 120 are formed on a second substrate 110 .
  • the light emitting diodes 120 are commonly referred to as micro light emitting diodes (Micro-LEDs).
  • the second substrate 110 may be a growth substrate (e.g., sapphire substrate). After the second substrate 110 is provided, epitaxial growth may be performed on the second substrate 110 to form a plurality of film layers (not shown) stacked to each other.
  • the plurality of film layers are patterned (i.e., to make an interior of the plurality of film layers has a gap g), thereby forming the plurality of light emitting diodes 120 separated from each other.
  • Each of the light emitting diodes 120 has a lower surface 120 a , an upper surface 120 b opposite to the lower surface 120 a and a sidewall 120 c connected between the lower surface 120 a and the upper surface 120 b .
  • the sidewall 120 c is defined by the gap g.
  • Each of the light emitting diodes 120 includes a first type semiconductor layer 121 , a second type semiconductor layer 122 opposite to the first type semiconductor layer 121 and a light emitting layer 123 located between the first type semiconductor layer 121 and the second type semiconductor layer 122 .
  • the first type semiconductor layer 121 is a P-type semiconductor layer, for example
  • the second type semiconductor layer 122 is an N-type semiconductor layer, for example.
  • the invention is not limited thereto.
  • the first type semiconductor layer 121 may also be an N-type semiconductor layer
  • the second type semiconductor layer 122 may also be a P-type semiconductor layer.
  • the second substrate 110 and the plurality of light emitting diodes 120 on the second substrate 110 may be disposed on a first substrate 130 .
  • the second substrate 110 is located between the plurality of light emitting diodes 120 and the first substrate 130 , and the lower surface 120 a of each of the light emitting diodes 120 faces the first substrate 130 .
  • the second substrate 110 has a lower surface 110 a facing the first substrate 130 , an upper surface 110 b opposite to the lower surface 110 a and a sidewall 110 c connected between the lower surface 110 a and the upper surface 110 b .
  • the gap g exposes a portion of the upper surface 110 b of the second substrate 110 .
  • the first substrate 130 is mainly used to carry the light emitting diodes 120 .
  • a material of the first substrate 130 may be glass, quartz, organic polymers, or opaque/reflective materials (e.g., wafers, ceramics), or other appropriate materials.
  • a first insulation layer 140 is formed to cover the plurality of light emitting diodes 120 .
  • a material of the first insulation layer 140 may be an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination of an organic material and an inorganic material.
  • the first insulation layer 140 may completely cover the light emitting diodes 120 , the second substrate 110 and the first substrate 130 .
  • the first insulation layer 140 may cover the upper surface 120 b of each of the light emitting diodes 120 , the sidewall 120 c of each of the light emitting diodes 120 , the portion of the upper surface 110 b of the second substrate 110 exposed by the gap g, the sidewall 110 c of the second substrate 110 and the portion of the upper surface 130 b of the first substrate 130 .
  • the invention is not limited thereto.
  • the first insulation layer 140 may not completely cover the first substrate 130 and/or the second substrate 110 .
  • the first insulation layer 140 may also partially cover the first substrate 130 and/or the second substrate 110 .
  • the first insulation layer 140 may be patterned to form a plurality of first contact holes 141 .
  • a portion of each of the light emitting diodes 120 is exposed by one corresponding first contact hole 141 .
  • a plurality of second contact holes 142 may be further optionally formed simultaneously.
  • the second contact holes 142 and the first contact holes 141 are separated from each other.
  • Another portion of each of the light emitting diodes 120 may be exposed by one corresponding second contact hole 142 .
  • a plurality of switch devices 150 are formed on the first insulation layer 140 .
  • the plurality of switch devices 150 are electrically connected to the plurality of light emitting diodes 120 .
  • the switch devices 150 are disposed on the first insulation layer 140 .
  • the switch devices 150 may be electrically connected to the light emitting diodes 120 via the first contact holes 141 .
  • the switch devices 150 may be electrically connected to the first type semiconductor layers 121 of the light emitting diodes 120 via the first contact holes 141 , but the invention is not limited thereto.
  • the switch device 150 may be an active or passive switch device.
  • the switch device 150 may include at least one thin film transistor, a scan line and a data line. A source of the thin film transistor is electrically connected to the data line, a gate of the thin film transistor is electrically connected to the scan line, and a drain of the thin film transistor is electrically connected to the light emitting diode 120 .
  • the active switch device 150 may further optionally include other electronic devices (e.g., capacitance) to enhance optical and/or electrical characteristics of the light emitting diode display 100 .
  • the invention does not limit whether the switch device 150 is active or passive and does not limit the specific structure of the switch device 150 . Whether the switch device 150 is active or passive and the specific structure thereof can be determined based on the actual needs.
  • a plurality of conductive patterns 160 may be further formed on the first insulation layer 140 .
  • the conductive patterns 160 are disposed on the first insulation layer 140 .
  • the conductive patterns 160 may be electrically connected to the plurality of second type semiconductor layers 122 of the plurality of light emitting diodes 120 via the plurality of second contact holes 142 .
  • the conductive patterns 160 may be grounded common electrodes, but the invention is not limited thereto.
  • the conductive patterns 160 may be fabricated together with a portion of the switch devices 150 (e.g., the gate of the thin film transistor), but the invention is not limited thereto. In other embodiments, the conductive patterns 160 and the switch devices 150 may also be fabricated separately.
  • the light emitting diode display 100 including at least one light emitting diode chip 10 is initially completed. It should be note that, the steps corresponding to FIG. 1E , FIG. 1E to FIG. 1 G, or FIG. 1E to FIG. 1H may be performed on the light emitting diode display 100 of FIG. 1D to form light emitting diode displays 100 - 1 , 100 - 2 , or 100 - 3 . The following is described with reference to FIG. 1E to FIG. 1H .
  • the light emitting diode displays 100 - 1 , 100 - 2 and 100 - 3 and the fabricating methods thereof are within the scope of the invention.
  • a second insulation layer 170 may be formed to cover the switch devices 150 .
  • the second insulation layer 170 further covers the conductive patterns 160 and a portion of the first insulation layer 140 .
  • a material of the second insulation layer 170 may be an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination of an organic material and an inorganic material.
  • the light emitting diode display 100 - 1 including at least one light emitting diode chip 10 - 1 of FIG. 1E further has the second insulation layer 170 compared with the light emitting diode display 100 of FIG. 1D .
  • the second insulation layer 170 is located between the fourth substrate 180 and the first insulation layer 140 .
  • the fourth substrate 180 may have an adhesive layer.
  • the fourth substrate 180 may use the adhesive layer to make the second insulation layer 170 and the switch devices 150 , the conductive patterns 160 , the first insulation layer 140 , the light emitting diodes 120 , the second substrate 110 and the first substrate 130 fixedly connected with the second insulation layer 170 be fixed on the fourth substrate 180 , but the invention is not limited thereto.
  • the fourth substrate 180 is a transit material, for example.
  • the transit material is silicon oxide (SiO 2 ), alumina (Al 2 O 3 ), tantalum oxide (Ta 2 O 5 ), ruthenium oxide (RuO 2 ), titanium oxide (TiO 2 ), zirconia (ZrO 2 ), or silicon nitride (SiN 4 ), for example, but the invention is not limited thereto.
  • the first substrate 130 may be removed to complete the light emitting diode display 100 - 2 .
  • the light emitting diode display 100 - 2 including at least one light emitting diode chip 10 - 2 of FIG. 1G further has the second insulation layer 170 and the fourth substrate 180 but without the first substrate 130 compared with the light emitting diode display 100 of FIG. 1D .
  • the light emitting diode display 100 - 3 including at least one light emitting diode chip 10 - 3 of FIG. 1H further has the second insulation layer 170 but without the first substrate 130 compared with the light emitting diode display 100 of FIG. 1D .
  • FIG. 2A to FIG. 2F are schematic cross-sectional views of a fabricating method of a light emitting diode display according to an embodiment of the invention.
  • the fabricating method of a light emitting diode display 100 A of FIG. 2A to FIG. 2F is similar to that of the light emitting diode display 100 of FIG. 1A to FIG. 1D .
  • the same or corresponding components are represented by the same or corresponding reference numbers.
  • the difference between the fabricating method of the light emitting diode display 100 A of FIG. 2A to FIG. 2F and that of the light emitting diode display 100 of FIG. 1A to FIG. 1D is that, the fabricating method of the light emitting diode display 100 A of FIG. 2A to FIG. 2F further includes the step of removing the second substrate 110 .
  • the difference between the two is mainly illustrated in the following, and the same or corresponding positions of the two are referred to the above illustrations.
  • the plurality of light emitting diodes 120 are formed on the second substrate 110 .
  • the second substrate 110 is removed.
  • the second substrate 110 may be removed using laser lift-off technology, but the invention is not limited thereto.
  • the second substrate 110 may also be removed using other appropriate methods (e.g., chemical etching). Referring to FIG. 2C and FIG.
  • the third substrate 190 dispose the light emitting diodes 120 on the first substrate 130 , and to make the third substrate 190 be separated from the light emitting diodes 120 after the light emitting diodes 120 are disposed at the first substrate 130 .
  • the first insulation layer 140 is formed to cover the plurality of light emitting diodes 120 .
  • the first insulation layer 140 may be patterned to form the plurality of first contact holes 141 and the plurality of second contact holes 142 .
  • the plurality of switch devices 150 and the plurality of conductive patterns 160 are formed on the first insulation layer 140 .
  • the switch devices 150 may be electrically connected to the first type semiconductor layers 121 of the light emitting diodes 120 via the first contact holes 141 .
  • the conductive patterns 160 may be electrically connected to the second type semiconductor layers 122 of the light emitting diodes 120 via the second contact holes 142 .
  • the light emitting diode display 100 A including at least one light emitting diode chip 10 A is initially completed.
  • the light emitting diode display 100 A is similar to the light emitting diode display 100 , but the light emitting diode display 100 A has no second substrate 110 compared with the light emitting diode display 100 .
  • the steps corresponding to FIG. 1E , FIG. 1E to FIG. 1G , or FIG. 1E to FIG. 1H may also be performed on the light emitting diode display 100 A of FIG.
  • FIG. 3 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • a light emitting diode display 100 B of FIG. 3 is similar to the light emitting diode display 100 of FIG. 1D .
  • the same or corresponding components are represented by the same or corresponding reference numbers.
  • the difference between the light emitting diode display 100 B of FIG. 3 and the light emitting diode display 100 of FIG. 1D is that, a first insulation layer 140 B of the light emitting diode display 100 B is different from the first insulation layer 140 of the light emitting diode display 100 .
  • the difference between the two is mainly illustrated in the following, and the same or corresponding positions of the two are referred to the above illustrations.
  • the light emitting diode display 100 B includes at least one light emitting diode chip 10 B.
  • Each of the light emitting diode chips 10 B includes the first substrate 130 , the plurality of light emitting diodes 120 disposed on the first substrate 130 , the first insulation layer 140 B covering the plurality of light emitting diodes 120 and the plurality of switch devices 150 disposed on the first insulation layer 140 B and electrically connected to the light emitting diodes 120 .
  • the first insulation layer 140 B does not completely cover the first substrate 130 and the second substrate 110 .
  • the first insulation layer 140 B may partially cover the first substrate 130 and the second substrate 110 .
  • two adjacent light emitting diodes 120 has the gap g therebetween.
  • the gap g exposes a portion of the upper surface 110 b of the second substrate 110 .
  • the first insulation layer 140 B covers the plurality of light emitting diodes 120 and may uncover a portion of the upper surface 110 b of the second substrate 110 , but the invention is not limited thereto.
  • FIG. 4 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • a light emitting diode display 100 C of FIG. 4 is similar to the light emitting diode display 100 of FIG. 1D .
  • the same or corresponding components are represented by the same or corresponding reference numbers.
  • the difference between the light emitting diode display 100 C of FIG. 4 and the light emitting diode display 100 of FIG. 1D is that, a first insulation layer 140 C of the light emitting diode display 100 C is different from the first insulation layer 140 of the light emitting diode display 100 .
  • the difference between the two is mainly illustrated in the following, and the same or corresponding positions of the two are referred to the above illustrations.
  • the light emitting diode display 100 C includes at least one light emitting diode chip 10 C.
  • Each of the light emitting diode chips 10 C includes the first substrate 130 , the plurality of light emitting diodes 120 disposed on the first substrate 130 , the first insulation layer 140 C covering the plurality of light emitting diodes 120 and the plurality of switch devices 150 disposed on the first insulation layer 140 C and electrically connected to the light emitting diodes 120 .
  • the first insulation layer 140 C does not completely cover the first substrate 130 and the second substrate 110 .
  • the first insulation layer 140 C may partially cover the first substrate 130 and the second substrate 110 .
  • two adjacent light emitting diodes 120 has the gap g therebetween.
  • the gap g exposes a portion of the upper surface 110 b of the second substrate 110 .
  • the first insulation layer 140 C covers the plurality of light emitting diodes 120 and may uncover a portion of the upper surface 110 b of the second substrate 110 and the sidewall 110 C of the second substrate 110 , but the invention is not limited thereto.
  • FIG. 5 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • a light emitting diode display 100 D of FIG. 5 is similar to the light emitting diode display 100 of FIG. 1D .
  • the same or corresponding components are represented by the same or corresponding reference numbers.
  • the difference between the light emitting diode display 100 D of FIG. 5 and the light emitting diode display 100 of FIG. 1D is that, a first substrate 130 D of the light emitting diode display 100 D is different from the first substrate 130 of the light emitting diode display 100 .
  • the difference between the two is mainly illustrated in the following, and the same or corresponding positions of the two are referred to the above illustrations.
  • the light emitting diode display 100 D includes at least one light emitting diode chip 10 D.
  • Each of the light emitting diode chips 10 D includes the first substrate 130 D, the plurality of light emitting diodes 120 disposed on the first substrate 130 D, the first insulation layer 140 covering the plurality of light emitting diodes 120 and the plurality of switch devices 150 disposed on the first insulation layer 140 and electrically connected to the light emitting diodes 120 .
  • the first substrate 130 D has a groove 132 , and the light emitting diodes 120 are disposed in the groove 132 .
  • the second substrate 110 is retained, and the second substrate 110 and the light emitting diodes 120 disposed on the second substrate 110 may be disposed in the groove 132 together.
  • the invention is not limited thereto. In other embodiments, if the second substrate 110 is removed, the light emitting diodes 120 may be directly disposed in the groove 132 .
  • FIG. 6 is a schematic cross-sectional view of a light emitting diode display according to an embodiment of the invention.
  • a light emitting diode display 100 E of FIG. 6 is similar to light emitting diode display 100 D of FIG. 5 .
  • the same or corresponding components are represented by the same or corresponding reference numbers.
  • the difference between the light emitting diode display 100 E of FIG. 6 and the light emitting diode display 100 D of FIG. 5 is that, the light emitting diode display 100 E may include a plurality of light emitting diode chips 10 D to form a light emitting diode display with a large display area.
  • the light emitting diode display 100 E not only includes the plurality of light emitting diode chips 10 D, but also includes a conductive wire 192 disposed on the first insulation layer 140 .
  • the conductive wire 192 is disposed on the first insulation layer 140 and electrically connected between two adjacent light emitting diode chips 10 D.
  • the fabricating method of the light emitting diode display includes the following steps.
  • the insulation layer is formed on the substrate carrying the plurality of light emitting diodes to cover the plurality of light emitting diodes.
  • the plurality of switch devices electrically connected to the plurality of light emitting diodes are formed on the insulation layer.
  • the light emitting diodes are not required to be transferred onto the drive circuit substrate with the switch device, thereby enhancing the yield of the light emitting diode display.

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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JPWO2020100293A1 (ja) * 2018-11-16 2021-09-24 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
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WO2020100290A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100301A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
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JPWO2020100297A1 (ja) * 2018-11-16 2021-10-14 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JPWO2020100300A1 (ja) * 2018-11-16 2021-10-07 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
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JPWO2020100301A1 (ja) * 2018-11-16 2021-10-07 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JPWO2020100303A1 (ja) * 2018-11-16 2021-10-07 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
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JPWO2020100294A1 (ja) * 2018-11-16 2021-09-24 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
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JPWO2020100299A1 (ja) * 2018-11-16 2021-09-24 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
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JPWO2020115851A1 (ja) * 2018-12-06 2021-10-14 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
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JPWO2020194387A1 (zh) * 2019-03-22 2020-10-01
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CN112289819A (zh) * 2019-07-25 2021-01-29 李蕙如 主动式rgb发光二极管显示器载板

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TW201828442A (zh) 2018-08-01
US20180337212A1 (en) 2018-11-22

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