US20170129072A1 - Porous Polishing Pad and Preparing Method of the Same - Google Patents

Porous Polishing Pad and Preparing Method of the Same Download PDF

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Publication number
US20170129072A1
US20170129072A1 US15/343,846 US201615343846A US2017129072A1 US 20170129072 A1 US20170129072 A1 US 20170129072A1 US 201615343846 A US201615343846 A US 201615343846A US 2017129072 A1 US2017129072 A1 US 2017129072A1
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Prior art keywords
polishing pad
preparing
porous polishing
present disclosure
prepolymer
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Abandoned
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US15/343,846
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English (en)
Inventor
Pal-Kon Kim
Sub Kim
Jong Ho Park
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FNS Technology Co Ltd
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FNS Technology Co Ltd
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Assigned to FNS TECH CO., LTD. reassignment FNS TECH CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, PAL-KON, KIM, SUB, PARK, JONG HO
Publication of US20170129072A1 publication Critical patent/US20170129072A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Definitions

  • the present disclosure relates to a porous polishing pad including pores formed by a reaction between a prepolymer and a saccharide material, and a method of preparing the porous polishing pad.
  • Semiconductor devices are formed from a flat, thin wafer of a semiconductor material such as silicon.
  • the wafer needs to be polished to have a sufficiently flat surface with no or minimal defects.
  • Various chemical, electrochemical, and chemical mechanical polishing techniques are employed to polish the wafers.
  • optical lenses and semiconductor wafers have been polished by a chemical-mechanical means.
  • VLSI very large scale integrated
  • ULSI ultra large scale integrated
  • CMP chemical mechanical polishing
  • a polishing pad prepared from a urethane material is used together with a slurry to polish the wafers.
  • the slurry includes polishing particles, such as aluminum oxide, cerium oxide or silica particles, dispersed in an aqueous medium.
  • the slurry is present between the CMP polishing pad and surface of the wafers during the CMP process, so that the slurry mechanically and chemically polishes the surface of the wafers and then is discharged to the outside.
  • the CMP polishing pad needs to store the slurry therein.
  • Such a slurry storage function of the CMP polishing pad may be carried out by pores formed in the polishing pad. That is, the slurry may permeate into the pores formed in the CMP polishing pad and thus efficiently polish a surface of a semiconductor for a long time.
  • a shape of the pores needs to be controlled and the properties, such as hardness, of the polishing pad need to maintain optimum conditions.
  • the polishing particles generally range in size from 100 nm to 200 nm.
  • the slurry further includes other agents such as surface acting agents, oxidizing agents, or pH regulators.
  • the urethane pad is weaved to have channels or perforations helpful in distributing the slurry across whole surface of the pad and the wafer and removing the slurry and slurry fragments.
  • hollow, spherical microelements are distributed throughout the urethane material. As a surface of the pad is worn away through use, the microelements provide a continually renewable surface texture.
  • Korean Patent Laid-open Publication No. 2015-0026903 discloses a chemical mechanical polishing pad.
  • the physical foaming agent may remain on the pad and cause damage to a wafer.
  • the use of copper as a connection material has been on the increase due to its low resistance.
  • an etching technique is employed to flatten conductive (metal) and insulating surfaces.
  • the CMP process causes many defects during polishing of a low-k material and a copper wire. If the low-k material is used for a copper inlay technique and the CMP process is performed, the low-k material may be deformed or damaged under a high mechanical pressure, so that a local defect may be formed in a substrate surface. Further, during polishing of the copper wire, a local defect such as dishing of the copper wire and erosion of a dielectric layer caused by overpolishing of the substrate surface may be formed. Furthermore, another layer such as a barrier layer may be removed in a non-uniform manner.
  • the present disclosure provides a porous polishing pad including pores formed by a reaction between a prepolymer and a saccharide material, and a method of preparing the porous polishing pad.
  • a method of preparing a porous polishing pad including: dispersing a saccharide material in a prepolymer; and preparing a polishing pad in which pores are formed in the prepolymer by a reaction between the prepolymer and the saccharide material.
  • a porous polishing pad prepared by the method according to the first aspect of the present disclosure and including pores which are chemically and physically formed by a saccharide material.
  • a physical foaming agent or chemical foaming agent has been used to form pores in a pad.
  • the physical foaming agent may remain on the porous polishing pad and thus cause damage to a wafer.
  • a polishing solution slurry is discharged through a hole mechanically formed in the polishing pad, and, thus, the polishing solution may remain on a polishing target substrate for a long time and thus can cause damage to the polishing target substrate.
  • a porous polishing pad is prepared without using a physical foaming agent, but the porous polishing pad including pores formed by a physical chemical reaction between a prepolymer and a saccharide material can be prepared. Further, according to an embodiment of the present disclosure, if a polishing target substrate is polished using the porous polishing pad including pores in the entire polishing pad, a polishing solution can be discharged through the pores formed in the entire polishing pad. Thus, a polishing rate becomes uniform and a surface quality of the polishing target is improved.
  • the saccharide material may be dissolved by the polishing solution or diluted water during a chemical mechanical polishing process and thus may form additional pores in the porous polishing pad.
  • the saccharide material is dissolved in the polishing solution or distilled water and thus does not remain on the polishing pad and does not damage the polishing target.
  • the saccharide material is also used as a corrosion inhibitor for metal, if a metal thin film is chemically and mechanically polished, the saccharide material can also function to protect the metal thin film.
  • an endothermic reaction occurring when the saccharide is dissolved by the polishing solution or deionized water on a surface of the polishing pad suppresses an increase in temperature of the polishing pad to a high temperature.
  • the uniformity of the polishing target substrate can be improved.
  • pores formed by a reaction between a prepolymer and a saccharide material it is possible to easily control a size and/or porosity of pores to be formed, since the reaction between the prepolymer and the saccharide material can be controlled by regulating a temperature of the reaction, a stirring speed, a stirring time, and the like. Further, porosity of pores to be formed can be easily controlled depending on the amount of added saccharide material.
  • FIG. 1 is a schematic diagram illustrating a porous polishing pad in accordance with an embodiment of the present disclosure.
  • FIG. 2 is a schematic diagram illustrating a porous polishing pad in accordance with an embodiment of the present disclosure.
  • FIG. 3 is a schematic diagram illustrating a porous polishing pad in accordance with an embodiment of the present disclosure.
  • FIG. 4A and FIG. 4B show cross-sectional SEM images of a porous polishing pad in accordance with an example of the present disclosure.
  • FIG. 5A and FIG. 5B show surface SEM images of a porous polishing pad in accordance with an example of the present disclosure.
  • connection or coupling that is used to designate a connection or coupling of one element to another element includes both a case that an element is “directly connected or coupled to” another element and a case that an element is “electronically connected or coupled to” another element via still another element.
  • the term “on” that is used to designate a position of one element with respect to another element includes both a case that the one element is adjacent to the another element and a case that any other element exists between these two elements.
  • the term “comprises or includes” and/or “comprising or including” used in the document means that one or more other components, steps, operation and/or existence or addition of elements are not excluded in addition to the described components, steps, operation and/or elements unless context dictates otherwise.
  • the term “about or approximately” or “substantially” are intended to have meanings close to numerical values or ranges specified with an allowable error and intended to prevent accurate or absolute numerical values disclosed for understanding of the present disclosure from being illegally or unfairly used by any unconscionable third party.
  • the term “step of” does not mean “step for”.
  • saccharide material refers to “a compound which has relatively small molecules from among carbohydrates and is dissolved in water, resulting in a sweet taste, and includes a monosaccharide material, a disaccharide material, and a polysaccharide material.
  • a method of preparing a porous polishing pad including: dispersing a saccharide material in a prepolymer; and preparing a polishing pad in which pores are formed in the prepolymer by a reaction between the prepolymer and the saccharide material.
  • FIG. 1 is a schematic diagram illustrating a porous polishing pad in accordance with an embodiment of the present disclosure.
  • the porous polishing pad in accordance with an embodiment of the present disclosure may include a polishing pad 100 including pores.
  • FIG. 2 is a schematic diagram illustrating a porous polishing pad in accordance with an embodiment of the present disclosure.
  • the polishing pad 100 may further include an auxiliary pad 200 attached to a lower part of the polishing pad 100 , but may not be limited thereto.
  • each of the polishing pad 100 and the auxiliary pad 200 may include urethane foam, but may not be limited thereto.
  • the prepolymer includes polyisocyanate and is used to prepare urethane foam constituting a matrix of the polishing pad.
  • the polyisocyanate may be used without particular limitation as long as it is an organic compound including two or more isocyanate groups in a molecule.
  • the polyisocyanate may include aliphatic, alicyclic, and aromatic polyisocyanates or modified compounds thereof.
  • the aliphatic and alicyclic polyisocyanates may include hexamethylene diisocyanate or isophoronediisocyanate, but may not be limited thereto.
  • the aromatic polyisocyanates may include tolylene diisocyanate, diphenyl methane diisocyanate, polyphenylene polymethylene polyisocyanate, or modified compounds thereof such as carbodiimide-modified compounds or prepolymers thereof, but may not be limited thereto.
  • the urethane foam may be prepared through a reaction between isocyanate and an isocyanate-terminated urethane prepolymer from prepolymer polyol.
  • the polyol may include a member selected from the group consisting of polypropylene ether glycol, polytetramethylene ether glycol, polyether glycol, polypropylene glycol, polycarbonate diol, and combinations thereof, or copolymers thereof, but may not be limited thereto.
  • the reaction between the isocyanate and the isocyanate-terminated urethane prepolymer may be carried out by reacting a urethane prepolymer such as isocyanate, di-isocyanate, and tri-isocyanate prepolymers with a prepolymer, such as polyol, containing isocyanate reactive residues.
  • a urethane prepolymer such as isocyanate, di-isocyanate, and tri-isocyanate prepolymers
  • a prepolymer such as polyol, containing isocyanate reactive residues.
  • the isocyanate reactive residues may include amine and polyol, but may not be limited thereto.
  • the polishing pad may be prepared using the above-described polymer resins, and a synthesizing method widely known in the art may be used without a specific limitation. For example, if a main body of the polishing pad is prepared from a polyurethane-based compound, a prepolymer method or a one-shot method may be used to prepare the polishing pad.
  • a urethane prepolymer is formed by reacting a polyol component and an isocyanate component and then, the urethane prepolymer, diamine or diol, a foaming agent, and a catalyst are mixed and cured, so that a polyurethane-based resin can be formed.
  • a polyol component, an isocyanate component, diamine or diol, a foaming agent, and a catalyst are mixed and cured, so that a polyurethane-based resin can be formed.
  • an additive and/or adjuvant may be used as being mixed with the polymer resin, e.g., polyisocyanate component, depending on a use, but the present disclosure may not be limited thereto.
  • the additive and/or adjuvant is not particularly limited as long as it is used to improve the properties or processibility of a typical resin but does not have a noticeable bad influence on an urethanization.
  • FIG. 3 shows an enlarged schematic diagram of a porous polishing pad in accordance with an embodiment of the present disclosure.
  • an unreacted saccharide material 130 which does not react with the prepolymer may be dispersed on the pores, but may not be limited thereto.
  • the porous polishing pad in accordance with embodiment of the present disclosure includes the pores formed in the entire polishing pad. Therefore, if a polishing target substrate is polished using the porous polishing pad in accordance with embodiment of the present disclosure, a polishing solution can be efficiently supplied to the polishing target substrate through the pores formed in the entire polishing pad.
  • the saccharide material may include a monosaccharide material, a disaccharide material, and a polysaccharide material, but may not be limited thereto.
  • the saccharide material may include a sugar-alcohol, but may not be limited thereto.
  • the saccharide material may be chemically bonded to the prepolymer or physically distributed in the prepolymer, but may not be limited thereto.
  • the pores may be chemically formed through pyrolysis, alcohol dehydration, alcohol cyclization, hydrogenation, or hydrogenolysis of the saccharide material.
  • the pores may be physically formed by dispersing a solid or liquid saccharide material within urethane.
  • the saccharide material may be contained in the amount of from about 1 part by weight to about 70 parts by weight with respect to 100 parts by weight of the prepolymer, but may not be limited thereto.
  • the saccharide material may be contained in the amount of from about 1 part by weight to about 70 parts by weight, from about 1 part by weight to about 60 parts by weight, from about 1 part by weight to about 50 parts by weight, from about 1 part by weight to about 40 parts by weight, from about 1 part by weight to about 30 parts by weight, from about 1 part by weight to about 20 parts by weight, from about 1 part by weight to about 10 parts by weight, from about 10 parts by weight to about 70 parts by weight, from about 20 parts by weight to about 70 parts by weight, from about 30 parts by weight to about 70 parts by weight, from about 40 parts by weight to about 70 parts by weight, from about 50 parts by weight to about 70 parts by weight, or from about 60 parts by weight to about 70 parts by weight with respect to about 100 parts by weight of the prepolymer, but may
  • the saccharide material may include a member selected from the group consisting of galactose, fructose, glucose, lactose, maltose, dextrin, sucrose, glycerin, xylitol, sorbitol, arabitol, erythritol, xylitol, ribitol, mannitol, galactitol, maltitol, lactitol, and combinations thereof, but may not be limited thereto.
  • the saccharide material may include a liquid phase, a solid phase, or a mixed phase thereof, but may not be limited thereto.
  • the saccharide material in the solid phase may have a particle size of from about 0.01 ⁇ m to about 1,000 ⁇ m, but may not be limited thereto.
  • the saccharide material in the solid phase may have a particle size of from about 0.01 ⁇ m to about 1,000 ⁇ m, from about 1 ⁇ m to about 1,000 ⁇ m, from about 10 ⁇ m to about 1,000 ⁇ m, from about 100 ⁇ m to about 1,000 ⁇ m, from about 200 ⁇ m to about 1,000 ⁇ m, from about 300 ⁇ m to about 1,000 ⁇ m, from about 400 ⁇ m to about 1,000 ⁇ m, from about 500 ⁇ m to about 1,000 ⁇ m, from about 600 ⁇ m to about 1,000 ⁇ m, from about 700 ⁇ m to about 1,000 ⁇ m, from about 800 ⁇ m to about 1,000 ⁇ m, from about 900 ⁇ m to about 1,000 ⁇ m, from about 0.01 ⁇ m to about 900 ⁇ m, from about 0.01 ⁇ m to about 800 ⁇ m, from about 0.
  • the saccharide material is added to the prepolymer with stirring, dispersibility can be improved. Therefore, pores can be formed uniformly in the polishing pad.
  • the polishing pad is a porous polishing pad including pores, the polishing solution is stored in the pores of the porous polishing pad during a mechanical chemical polishing process, and, thus, it is possible to efficiently polish the polishing target substrate for a long time.
  • the method of preparing a porous polishing pad may include: adding a curing agent during the reaction between the prepolymer and the saccharide material, but may not be limited thereto.
  • the curing agent may be contained in the amount of from about 20 parts by weight to about 50 parts by weight with respect to about 100 parts by weight of the prepolymer, but may not be limited thereto.
  • the curing agent may be contained in the amount of from about 20 parts by weight to about 50 parts by weight, from about 20 parts by weight to about 40 parts by weight, from about 20 parts by weight to about 30 parts by weight, from about 30 parts by weight to about 50 parts by weight, or from about 40 parts by weight to about 50 parts by weight with respect to about 100 parts by weight of the prepolymer, but may not be limited thereto.
  • the curing agent may include compounds used to cure or harden a urethane prepolymer, or mixtures of the compounds, but may not be limited thereto.
  • the curing agent may react with an isocyanate group to connect chains of the prepolymer and thus form polyurethane.
  • the curing agent may include a member selected from the group consisting of 4,4′-methylene-bis(2-chloroaniline) (MBCA), which is often called “MOCA” (registered trademark), 4,4′-methylene-bis(3-chloro-2,6-diethylaniline) (MCDEA), dimethyl thio toluenediamine, trimethylene glycol di-p-aminobenzoate, polytetramethylene oxide di-p-aminobenzoate, polytetramethylene oxide mono-p-aminobenzoate, polypropylene oxide di-p-aminobenzoate, polypropylene oxide mono-p-aminobenzoate, 1,2-bis(2-aminophenylthio)ethane, 4,4′-methylene-bis-aniline, diethyltoluenediamine, 5-tert-butyl-2,4-toluenediamine, 3-tert-butyl-2,6-toluenediamine, 5-
  • the auxiliary pad 200 may be attached to the polishing pad 100 with an adhesive 210 and thus function as a cushion for protecting the polishing pad 100 and improve polishing uniformity.
  • the adhesive 210 may be used without particular limitation as long as it attaches the auxiliary pad 200 to the polishing pad 100 without deteriorating performance of the polishing pad 100 , but may not be limited thereto.
  • a polishing target substrate may be prepared and the polishing target substrate may be chemically and mechanically polished using the porous polishing pad according to an embodiment of the present disclosure and a polishing solution.
  • the method of preparing a porous polishing pad may further include attaching the porous polishing pad to a polishing machine with an adhesive 220 .
  • a saccharide material included in the porous polishing pad in accordance with an embodiment of the present disclosure may be dissolved by the polishing solution during a chemical mechanical polishing process and thus may form additional pores in the polishing pad, but may not be limited thereto.
  • a porous polishing pad which is prepared by the method according to the first aspect of the present disclosure and including pores which are chemically and physically formed by a saccharide material.
  • pores are formed in a polishing pad, it is difficult to precisely regulate a size and porosity of the pores, and it is not easy to form uniform pores of about 50 ⁇ m or less.
  • the reaction between the prepolymer and the saccharide material can be controlled by regulating a temperature of the reaction, a stirring speed, or a stirring time. Therefore, it is possible to easily control a pore size and porosity of the porous polishing pad.
  • a physical foaming agent used for forming pores in the polishing pad remains in the polishing pad even after the polishing pad is formed.
  • the physical foaming agent causes a defect in a polishing target during a polishing process.
  • a physical foaming agent is not used, and, thus, impurities are not generated from a foaming agent and generation of defects can be suppressed.
  • the saccharide material used for forming pores in the polishing pad may be dissolved in a polishing solution or distilled water and thus may form additional pores in the porous polishing pad during a chemical mechanical polishing process.
  • MOCA urethane prepolymer
  • the curing agent was added after calculating a stoichiometric equivalent ratio according to the NCO content and equivalent ratio of the prepolymer.
  • the mixture was coated on a heated substrate and then molded under pressure.
  • the molded pad was cured at 96.5° C. for 16 hours and then processed to a thickness of 100 mils.
  • a groove was formed in a polishing surface, so that a porous polishing pad was prepared.
  • the polishing pad prepared in Example 1 was attached to a wafer polishing machine (AP-300) on the market and then, the polishing target wafer was polished.
  • the polishing pad was conditioned for from about 15 minutes to about 20 minutes before the wafer was polished.
  • the wafer was polished using a silica-based polishing solution on the market.
  • the polishing conditions were equally applied to the present example and all of the other examples to directly compare the performance: a pressure of 9 psi; a press plate speed of 95 rpm; a carrier speed of 90 rpm; and a polishing time of 1 minute.
  • a thin film thickness was measured using a ST-3000 manufactured by K-MAC. After the polishing pad prepared in Example 1 and the wafer polishing machine were used to polish the polishing target wafer, a thin film thickness was 4,672 ⁇ /min. In case of using an expancel which has been conventionally used as a physical foaming agent, a thin film thickness after polishing was 4,480 ⁇ /min. As described above, it could be seen that the porous polishing pad prepared by using the saccharide material according to the present example had the polishing efficiency similar to that of the porous polishing pad prepared by using the conventional physical foaming agent.
  • FIGS. 4A and 4B and FIGS. 5A and 5B are SEM images of the porous polishing pad prepared according to Example 1.
  • FIG. 4A and FIG. 4B are cross-sectional SEM images of the porous polishing pad including 40 parts by weight of a saccharide material
  • FIG. 5A and FIG. 5B are surface SEM images of the porous polishing pad including 40 parts by weight of a saccharide material.
  • the porous polishing pad using the saccharide material as described in Example 1 included pores which are chemically and physically formed by the saccharide material. All the physically dispersed saccharide material was dissolved and removed by deionized water before and after the polishing target wafer was polished.
  • the saccharide material is also used as a corrosion inhibitor for metal and does not include a physical expancel unlike a porous polishing pad including the conventional physical foaming agent. Thus, the saccharide material is considered as favorable in terms of damage.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Biotechnology (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
US15/343,846 2015-11-05 2016-11-04 Porous Polishing Pad and Preparing Method of the Same Abandoned US20170129072A1 (en)

Applications Claiming Priority (2)

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KR10-2015-0155076 2015-11-05
KR1020150155076A KR101690996B1 (ko) 2015-11-05 2015-11-05 다공성 연마 패드 및 이의 제조 방법

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JP (1) JP2017121692A (ja)
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CN (1) CN106670990A (ja)
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CN110039381B (zh) * 2019-04-23 2020-04-07 新昌浙江工业大学科学技术研究院 圆柱滚子的超精密抛光方法

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EP2083027B8 (en) * 2008-01-24 2012-05-16 JSR Corporation Mechanical polishing pad and chemical mechanical polishing method
JP4294076B1 (ja) * 2008-05-20 2009-07-08 富士紡ホールディングス株式会社 研磨パッドの製造方法
KR101532990B1 (ko) * 2011-09-22 2015-07-01 도요 고무 고교 가부시키가이샤 연마 패드

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CN106670990A (zh) 2017-05-17

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