US20160204342A1 - Method of manufacturing magnetoresistive element and manufacturing system for the same - Google Patents

Method of manufacturing magnetoresistive element and manufacturing system for the same Download PDF

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US20160204342A1
US20160204342A1 US15/075,409 US201615075409A US2016204342A1 US 20160204342 A1 US20160204342 A1 US 20160204342A1 US 201615075409 A US201615075409 A US 201615075409A US 2016204342 A1 US2016204342 A1 US 2016204342A1
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manufacturing
gas
magnetoresistive element
layer
etching
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Marie Hayashi
Kiyotaka Sakamoto
Masayoshi Ikeda
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Canon Anelva Corp
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Canon Anelva Corp
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Publication of US20160204342A1 publication Critical patent/US20160204342A1/en
Priority to US15/595,103 priority Critical patent/US10157961B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H01L43/12—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H01L43/02—
    • H01L43/08—
    • H01L43/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Definitions

  • the present invention relates to a method of manufacturing a magnetoresistive element, and a manufacturing system for the same.
  • MRAM magnetic random access memory
  • DRAM dynamic random access memory
  • SRAM static random access memory
  • the TMR elements are arranged at intersections of word lines and bit lines to be used to read and write signals, for example.
  • the TMR element is used as a memory cell in which an underlayer being the lowermost layer and a cap layer being the uppermost layer are processed to be a lower electrode and an upper electrode, respectively, and are then connected to wiring to play roles as the electrodes.
  • the TMR element When an electric current flows vertically from the lower electrode to the upper electrode in the TMR element, the TMR element freely changes the magnetic direction of a magnetization free layer as a ferromagnetic layer, and thereby switches the electric resistance value of the electric current flowing into the an insulating layer between the high and low levels.
  • the MRAM With the low resistant state and the high resistant state of each TMR element set to “0” and “1,” respectively, the MRAM performs information reading and writing by exchanging the information with the metal wiring.
  • Patent Document 1 discloses the invention intended to solve damage caused on a multilayer magnetic film in the processing of the multilayer magnetic film by reactive ion beam etching.
  • Patent Document 1 discloses that a damage layer formed on the multilayer magnetic film in the processing by the reactive ion beam etching is removed with ion beam irradiation.
  • Patent Document 1 discloses that a protection film (made of aluminum nitride or the like) is formed on the clean surface of the magnetic film obtained by removing the damage layer.
  • Patent Document 1 International Publication No. WO 2007/032379
  • Patent Document 1 The invention disclosed in Patent Document 1 is intended to enhance the magnetic properties by removing the damage layer and thereby to improve the yield, and therefore has made tremendously great contribution to this technical field.
  • a method of manufacturing a magnetoresistive element provided according to an aspect of the present invention is a method of manufacturing a magnetoresistive element in which a tunnel barrier layer is provided between two magnetic layers, the method comprising the steps of: preparing a stacked film on a substrate, the stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers; forming a plurality of separated stacked films on the substrate by separating the stacked film into the plurality of stacked films by etching; irradiating side portions of the plurality of separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the plurality of stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.
  • a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties.
  • FIG. 1 is a flowchart for explaining a method of manufacturing a magnetoresistive element according to an embodiment of the present invention.
  • FIG. 2A is a schematic view (No. 1) for explaining a magnetoresistive element obtained by the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 2B is a schematic view (No. 2) for explaining magnetoresistive elements obtained by the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 3 is a schematic view for explaining a manufacturing system preferable to implement the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 4 is a schematic view for explaining a processing apparatus applicable to etching in the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 5 is a schematic view for explaining a processing apparatus applicable to ion beam irradiation and an oxidation process in the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 6A is a diagram (No. 1) for explaining an effect of the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 6B is a diagram (No. 2) for explaining the effect of the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 6C is a diagram (No. 3) for explaining the effect of the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 7A is a cross sectional process chart (No. 1) for explaining the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 7B is a cross sectional process chart (No. 2) for explaining the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 7C is a cross sectional process chart (No. 3) for explaining the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 7D is a cross sectional process chart (No. 4) for explaining the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 7E is a cross sectional process chart (No. 5) for explaining the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 7F is a cross sectional process chart (No. 6) for explaining the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 8 is a graph (No. 1) for explaining a relationship between an etch rate and an incident angle of Ar particles.
  • FIG. 9 is a graph (No. 2) for explaining a relationship between an etch rate and an incident angle of Ar particles.
  • FIG. 10 is a diagram for explaining a sequence in the method of manufacturing a magnetoresistive element according to the embodiment of the present invention.
  • FIG. 11 is a graph presenting a relationship between an oxidation process time and a layer thickness of an oxide layer.
  • FIG. 1 presents steps to be executed in a method of manufacturing a magnetoresistive element according to this embodiment. Note that this embodiment is described for a case of manufacturing a tunneling magnetoresistive (TMR) element as a magnetoresistive element.
  • the method of manufacturing a magnetoresistive element according to this embodiment includes steps S 121 , S 122 , S 123 , and S 124 which are executed sequentially in this order as presented in FIG. 1 .
  • Step S 121 is a step of preparing a stacked film formed on a substrate, the stacked film including two magnetic layers between which a layer to function as a tunnel barrier layer is held.
  • step S 121 is the step of obtaining the stacked film including a magnetization free layer, an insulating layer, and a magnetization pinned layer in such a way that after the forming of an electrode layer and others on the substrate, magnetic layers to function as the magnetization free layer and the magnetization pinned layer, and the insulating layer to function as the tunnel barrier layer are stacked.
  • the substrate on which the stacked film is formed is a substrate made of, for example, silicon, glass, or the like, and used as a substrate for TMR element formation.
  • This step S 121 can be executed by using a known technique. For example, various kinds of film deposition techniques such as a sputtering technique and chemical vapor deposition technique (CVD technique) are usable to form the magnetization free layer, the insulating layer, and the magnetization pinned layer.
  • CVD technique chemical vapor deposition technique
  • Step S 122 is a step of forming multiple separated stacked films on the substrate by separating by etching the stacked film obtained in step S 121 into the multiple stacked films.
  • This step S 122 is the step of processing the stacked film (body) into multiple individual separated stacked films by performing generally-employed processes including: forming a hard mask layer on the stacked film; applying a photoresist; patterning the photoresist; and performing dry etching.
  • the multiple separated stacked films each function as a TMR element.
  • Step S 122 As the dry etching in this step S 122 , reactive ion etching, or ion beam irradiation used in step S 123 to be described next can be used.
  • Step S 122 can be executed inside an etching chamber of an etching apparatus capable of performing such dry etching.
  • Step S 123 is a step of performing a trimming process in such a way that mainly side portions (side wall portions) of the multiple separated stacked films on the substrate obtained in step S 122 are irradiated with ion beams inside a pressure-reducible chamber.
  • This trimming process is to remove damage layers, deposits (adhered substances) and the like generated on the side portions (side wall portions) of the stacked films by the dry etching in step S 122 .
  • the damage layers and the like to be removed by the trimming process include a damage layer due to oxidation, and deposits such as water, organic substances, and inorganic substances unintentionally adhered to and deposited on the side portions (side wall portions) of the stacked films.
  • Such deposits are, for example, etching residues, and reaction products of the etching residues with a gas such as the etching gas.
  • This step S 123 may employ an ion beam etching apparatus configured to extract, as beams, ions released by plasma generation, and to irradiate a work piece with the beams.
  • the generation of plasma to extract ions as beams may use an inert gas such as an argon (Ar) gas, a krypton (Kr) gas, or a xenon (Xe) gas.
  • an inert gas such as an argon (Ar) gas, a krypton (Kr) gas, or a xenon (Xe) gas.
  • Step S 124 is a step of forming oxide layers on the surfaces of the multiple stacked films by introducing an oxygen (O 2 ) gas into the pressure-reducible chamber where the ion beam irradiation is performed in step S 123 .
  • the pressure-reducible chamber to which the oxygen gas is introduced preferably has a base pressure of 1.3 ⁇ 10 ⁇ 3 Pa or lower.
  • the oxygen gas may be introduced alone, or may be introduced as a mixture with another gas such as an argon gas or a nitrogen (N 2 ) gas. Instead, the oxygen gas may be introduced into the chamber together with the inert gas used to generate the plasma in step S 123 described above.
  • the layer thickness of the oxide layers formed on the surfaces of the stacked films can be controlled easily.
  • the inert gas used to generate the plasm in step S 123 described above is introduced together with the oxygen gas, there is no need to provide an additional gas introduction system.
  • Step S 124 is the most distinctive step in this embodiment.
  • Step S 124 is to perform the oxidation process using the oxygen gas inside the same chamber as the chamber where the ion beam irradiation in step S 123 is performed.
  • the oxidation process performed in the same chamber can suppress contamination on the surfaces of the stacked films that may occur due to adsorption of adherent molecules (such as H 2 , H 2 O, and C) or due to other causes during the transfer to the different chamber.
  • adherent molecules such as H 2 , H 2 O, and C
  • the introduction of the oxygen gas into the chamber in which the ion beam irradiation is just performed can be performed in succession to the ion beam irradiation, that is, after the ion beam irradiation without opening the gate valve or the like serving as a gateway for loading/unloading a substrate to/from the chamber. This ensures that contamination of the surfaces of the stacked films can be suppressed.
  • a protection layer (protection film) may be formed on the oxide layers thus formed.
  • the formation of a further protection layer on the oxide layers formed on the surfaces kept from adsorbing the adherent molecules may offer a sufficient protection function.
  • a nitride film is preferable, and more specifically a silicon nitride film (SiN film) can be cited.
  • an aluminum nitride film (AlN film), a silicon oxynitride film (SiON film), or the like can be also cited as other specific examples of the protection film.
  • a film deposition method for the protection layer is not particularly limited, but may use the CVD technique, the sputtering technique, or the like.
  • FIGS. 2A and 2B schematically illustrate general outline views of TMR elements manufactured by the method of manufacturing a magnetoresistive element according to this embodiment in states before and after processing.
  • the manufacturing of TMR elements is conducted in processes including a step of processing a magnetoresistive film deposited on a substrate by an etching process such as ion beam etching (IBE), reactive ion etching (RIE), or reactive ion beam etching.
  • IBE ion beam etching
  • RIE reactive ion etching
  • FIG. 2A illustrates the general outline view of TMR elements before processing
  • FIG. 2B illustrates the general outline view of TMR elements after the processing.
  • 241 indicates a photoresist or hard mask
  • 242 indicates an upper electrode.
  • a magnetization free layer, a tunnel barrier layer, a magnetization pinned layer, an antiferromagnetic layer, and a lower electrode, which are described later, are stacked on the substrate in this order from the upper electrode 242 side to the substrate side.
  • the upper electrode 242 and the layers thereunder are processed by using the photoresist or hard mask 241 processed in a desired pattern.
  • 201 indicates the substrate
  • 240 indicates TMR elements.
  • an oxide layer oxide film
  • the oxide layer is omitted herein in order to facilitate the understanding of the lamination structure.
  • FIG. 2B illustrates a bottom pin structure in which the magnetization pinned layer is located at the bottom position.
  • the TMR element 240 includes an upper electrode 242 , a magnetization free layer 243 , a tunnel barrier layer 244 , and a magnetization pinned layer 245 , an antiferromagnetic layer 246 , and a lower electrode 247 , which form a base structure.
  • Ta, Ru, Ti, or the like is preferably used as a material for constituting the upper electrode 242 and the lower electrode 247 .
  • materials for constituting the magnetization free layer 243 and the magnetization pinned layer 245 used are materials each having a structure including a single layer or a laminate structure including two or more layers, the layers each made of a material containing an alloy of CoFeB, or an alloy of at least one or more of Co, Fe, Ni, and the like.
  • aluminum oxide (Al 2 O 3 ) or magnesium oxide (MgO) is preferable as a material for constituting the tunnel barrier layer 244 .
  • any of oxides containing at least one or more of Mg, Al, Ti, Zn, Hf, Ge, and Si may be used.
  • the tunnel barrier layer 244 is held between the magnetization pinned layer 245 and the magnetization free layer 243 , which are two ferromagnetic layers.
  • the magnetization pinned layer 245 can be regarded as one of the magnetic layers
  • magnetization free layer 243 can be regarded as the other of the magnetic layers.
  • the TMR element is described by using what is termed as a bottom pin structure in which the magnetization pinned layer is located under the tunnel barrier layer.
  • the structure of the TMR element should not be limited in particular. Indeed, the present invention can be also used preferably in the case where the structure of the TMR element is what is termed as a top pin structure in which the magnetization pinned layer is located on top of the tunnel barrier layer.
  • FIG. 3 schematically illustrates an example of a manufacturing system preferable to implement the method of manufacturing a magnetoresistive element according to this embodiment.
  • the manufacturing system includes an etching chamber 303 , a process chamber 304 , and a protection layer formation chamber 305 as chambers where to execute the foregoing steps.
  • the manufacturing system includes a vacuum transfer chamber 302 as a substrate transfer chamber, and a wafer loader 301 .
  • the etching chamber 303 is a chamber where to perform the etching of step S 122 presented in FIG. 1 .
  • the etching chamber 303 is a chamber in which reactive ion etching can be performed in general.
  • the process chamber 304 is a chamber where to perform the ion beam irradiation of step S 123 and the oxide layer formation of step S 124 presented in FIG. 1 .
  • the process chamber 304 is provided with means capable of introducing an oxygen gas into the process chamber 304 , and means capable of ion beam etching inside the process chamber 304 .
  • the protection layer formation chamber 305 is a chamber where to perform a process of forming a protection layer (protection film) as needed on the oxide layers formed in the process chamber 304 .
  • the etching chamber 303 , the process chamber 304 , and the protection layer formation chamber 305 are installed with the vacuum transfer chamber 302 via shutter means (not illustrated) such as gate valves in such a manner that the chambers 303 , 304 , and 305 can individually communicate with the vacuum transfer chamber 302 .
  • Each of the vacuum transfer chamber 302 , the etching chamber 303 , the process chamber 304 where to perform the ion beam irradiation and the oxidation process, and the protection layer formation chamber 305 may be a pressure-reducible chamber.
  • the wafer loader 301 is further installed with the vacuum transfer chamber 302 .
  • elements before processing can be loaded to the vacuum transfer chamber 302 and the elements after completion of the processing can be unloaded.
  • the elements before the processing are in the form of a stacked film formed on a substrate and including two magnetic layers between which a layer to function as a tunnel barrier layer is held.
  • the elements before the processing are prepared by a deposition apparatus such as a sputtering apparatus to execute step S 121 presented in FIG. 1 .
  • the deposition apparatus that prepares the elements before the processing may be separate from and independent of the manufacturing system illustrated in FIG. 3 , or may be incorporated in the manufacturing system illustrated in FIG. 3 . In the latter case, a deposition chamber where the deposition apparatus to execute step S 121 is to perform deposition is installed with the vacuum transfer chamber 302 in a manner capable of communicating with the vacuum transfer chamber 302 via shutter means such as a gate valve.
  • the vacuum transfer chamber 302 is provided therein with substrate transfer means not illustrated, and is capable of transferring loaded elements before the processing to the chambers one after another as illustrated by arrows 321 , 322 , 323 , 324 .
  • the transfer of the elements before the processing as illustrated by the arrows 321 , 322 , 323 , 324 in FIG. 3 can be carried out consistently under a vacuum condition (condition under reduced pressure) via the vacuum transfer chamber 302 without breaking the vacuum.
  • FIG. 4 is a schematic view of a reactive ion etching apparatus employable as a processing apparatus applicable to the etching of this embodiment.
  • the etching apparatus illustrated in FIG. 4 includes a vacuum container 400 and a dielectric wall container 406 connected to the vacuum container 400 in such an air-tight manner that the inner space thereof communicates with the vacuum container 400 .
  • the vacuum container 400 is equivalent to the foregoing etching chamber 303 illustrated in FIG. 3 .
  • the inside of the vacuum container 400 is evacuated by an evacuation system 430 .
  • a substrate 201 is loaded into the vacuum container 400 via a gate valve not illustrated.
  • the substrate 201 loaded in the vacuum container 400 is held by a substrate holder 440 .
  • the substrate 201 is one on which a stacked film is formed, the stacked film including a layer to function as a tunnel barrier layer, and two magnetic layers between which that layer is held.
  • the substrate holder 440 is capable of being maintained at a predetermined temperature by a temperature control mechanism 450 .
  • a bias power source 460 to apply a bias voltage to the substrate 201 is connected to the substrate holder 440 .
  • a gas introduction system 410 to introduce an etching gas into the vacuum container 400 is connected to the vacuum container 400 .
  • the etching gas various kinds of etching gases which are not particularly limited can be used.
  • an alcohol gas containing at least one or more hydroxyl groups such as a methanol (CH 3 OH) gas may be used.
  • a large number of side wall magnets 420 are arranged side by side outside the side wall of the vacuum container 400 .
  • the side wall magnets 420 form cusp fields along inner surfaces of the side wall of the vacuum container 400 .
  • the cusp fields prevent plasma from being diffused to the inner surface of the side wall of the vacuum container 400 .
  • the dielectric wall container 406 is provided with a plasma source to form plasma P inside the dielectric wall container 406 .
  • the plasma source includes an antenna 402 to generate an induction field inside the dielectric wall container 406 , a high frequency power source 403 connected to the antenna 402 by way of a transmission line 404 via a matching box not illustrated, and electromagnets 405 .
  • the antenna 402 is arranged to surround the dielectric wall container 406 .
  • the electromagnets 405 are arranged to surround the dielectric wall container 406 and the antenna 402 .
  • the etching process is carried out in the following way.
  • the gas introduction system 410 is driven to introduce the etching gas at a predetermined flow rate into the vacuum container 400 via a pipe, a valve, and a flow rate regulator from a gas cylinder in which the etching gas is stored.
  • the introduced etching gas is diffused in the inside of the dielectric wall container 406 via the inside of the vacuum container 400 .
  • the plasma source is driven to form plasma P.
  • the electromagnets 405 generate a predetermined magnetic field inside the dielectric wall container 406 .
  • the high frequency power source 403 generates high frequency power (source power) to be supplied to the antenna 402 .
  • the electric current flows through the antenna 402 , and the plasma P is formed inside the dielectric wall container 406 .
  • the plasma P thus formed is diffused to the inside of the vacuum container 400 from the dielectric wall container 406 , and reaches around the surface of the substrate 201 , so that the surface of the substrate 201 is etched.
  • the photoresist or hard mask patterned, for example, in a memory pattern form is formed on the laminated films constituting the magnetoresistive film arranged on the substrate 201 .
  • the laminated films are etched by the plasma P by using the photoresist or hard mask as a mask. In this way, multiple stacked films separated from each other are formed on the substrate 201 .
  • the bias power source 460 may be driven to apply a self-bias voltage, which is a negative direct voltage, to the substrate 201 , and thereby to control incidence energy of ions from the plasma incident onto the surface of the substrate 201 .
  • FIG. 5 is a schematic view illustrating a processing apparatus capable of performing an ion beam irradiation process and oxide layer formation by an oxidation process.
  • the processing apparatus illustrated in FIG. 5 is an ion beam etching apparatus (ion beam irradiation apparatus), and includes a process chamber 501 and a plasma generation chamber 502 .
  • a vacuum pump 503 is connected to the process chamber 501 .
  • both the etching process by ion beam etching and the oxidation process by oxygen gas introduction can be performed as described later.
  • the process chamber 501 is equivalent to the aforementioned process chamber 304 illustrated in FIG. 3 .
  • the plasma generation chamber 502 is provided with a bell jar 504 , a first gas inlet 505 , an RF antenna 506 , a matching box 507 , and an electromagnetic coil 508 .
  • An extraction electrode (grid) 509 is provided at a boundary between the plasma generation chamber 502 and the process chamber 501 .
  • the extraction electrode 509 includes three electrodes 515 , 516 , 517 .
  • the three electrodes 515 , 516 , 517 are plate-shaped electrodes each having openings formed in a grid pattern, and are arranged in parallel to each other.
  • a substrate holder 510 which includes an ESC electrode 512 on the plasma generation chamber 502 side of the substrate holder 510 .
  • the substrate 201 to be processed is placed on the ESC electrode 512 and is held on the ESC electrode 512 by electrostatic chucking.
  • an etching gas is introduced from the first gas inlet 505 , and a high frequency is applied to the RF antenna 506 , so that plasma of the etching gas can be generated inside the plasma generation chamber 502 .
  • the etching gas introduced from the first gas inlet 505 is not particularly limited, but an inert gas such as an argon gas, for example, may be used as the etching gas.
  • the ions inside the plasma generation chamber 502 are extracted as beams, and the substrate 201 is irradiated with the ion beams thus extracted. In this way, the substrate 201 is processed.
  • the extracted ion beams are electrically neutralized by a neutralizer not illustrated. Then, the substrate 201 is irradiated with the neutralized ion beams, and thus is prevented from causing charge-up.
  • the substrate holder 510 is capable of tilting at an arbitrary angle to the ion beams.
  • the substrate holder 510 has a structure capable of rotating the substrate 201 in its in-plane direction (rotating the substrate 201 on its own axis).
  • the side wall portions of the multiple stacked films formed on the substrate 201 can be irradiated with the ion beams at a predetermined incident angle, and also the entire surface of the substrate 201 can be evenly irradiated with the ion beams, as described later.
  • the process chamber 501 is provided with a second gas inlet 514 , and an oxygen gas for the oxidation process can be introduced as a process gas from the second gas inlet 514 into the process chamber 501 .
  • the oxygen gas may be also introduced to the process chamber 501 via the plasma generation chamber 502 from the first gas inlet 505 as similar to the second gas inlet 514 .
  • the oxygen gas introduced from the second gas inlet 514 or the first gas inlet 505 may be an oxygen gas alone, or may be mixed with another gas such as an argon gas or a nitride gas.
  • the ion beam etching apparatus illustrated in FIG. 5 is capable of performing a trimming process of the damage layers and the like generated on the side wall portions of the multiple stacked films. This trimming process removes the damage layers due to oxidation, and deposits such as water, organic substances, inorganic substances and the like adhered to and deposited on the side wall portions of the stacked films.
  • the oxygen gas is introduced into the process chamber 501 from the second gas inlet 514 or the first gas inlet 505 , and the oxidation process is performed on the stacked films having the clean side wall portions after the trimming process.
  • the oxygen gas may be introduced into the process chamber 501 from both the second gas inlet 514 and the first gas inlet 505 .
  • the oxidation process using the oxygen gas is performed inside the process chamber 501 which is the chamber in which the ion beam irradiation is performed, as described above.
  • the oxidation process is performed without unloading the substrate to the outside of the chamber.
  • the oxidation process can be performed on the clean side wall portions of the stacked films after the trimming process.
  • adherent molecules such as H 2 , H 2 O, and C
  • FIGS. 6A to 6C are graphs for explaining an effect of this embodiment.
  • FIG. 6A depicts an analytic spectrum of X-ray reflectivity measured on an oxide film (oxide layer) obtained by oxidizing a ferrocobalt layer which is a magnetic layer used in an MRAM formed according to this embodiment.
  • the abscissa axis indicates the angle of reflection of X-rays and the ordinate axis indicates the reflectivity of the X-rays.
  • the oxide film was formed by performing the oxidation process for one minute by introducing the oxygen gas at a flow rate of 50 SCCM into the process chamber 304 , illustrated in FIG. 3 , in which both the ion beam irradiation and the oxidation process can be performed.
  • the partial pressure of the oxygen inside the chamber 304 in this process was 1.3 ⁇ 10 ⁇ 2 Pa.
  • the film thickness of the oxide film is found to be 1.65 nm.
  • FIG. 6C depicts a result of this management.
  • the film thickness obtained from FIG. 6C is 1.79 nm, which slightly increases from the film thickness obtained from FIG. 6A . What is more important than the film thicknesses is that the waveforms of the two cases are very similar to each other. This proves that the oxide film formed previously can be maintained even after the sample is left for five minutes in the different chamber.
  • FIG. 6B depicts the analysis result of the sample thus prepared.
  • the spectrum depicted in FIG. 6B presents a waveform apparently different from those of the spectra depicted in FIGS. 6A and 6C . Then, the film thickness obtained from FIG. 6B is 1.38 nm, which is thinner.
  • the oxide layers can be favorably formed on the surfaces of the stacked films according to this embodiment, in which the IBE process and the oxidation process are performed in the same chamber.
  • the oxygen gas after completion of the plasma generation for ion beam irradiation. This ensures the successful execution of each of the ion beam irradiation process with the plasma generation and the oxidation process.
  • a preferable partial pressure of the oxygen gas in the oxide layer formation is within a range of 1.0 ⁇ 10 ⁇ 1 Pa to 2.0 ⁇ 10 ⁇ 3 Pa. Then, a preferable process time of the oxidation process under such a partial pressure of the oxygen gas is within a range of 10 seconds to 5 minutes.
  • a preferable layer thickness of the oxide layer is within a range of 1.5 nm to 3.0 nm.
  • Use of the oxide layers each having a layer thickness of 1.5 nm or greater ensures prevention of the contamination due to the adsorption of adherent molecules or other causes. Meanwhile, use of the oxide layers each having a layer thickness of 3.0 nm or smaller ensures high process efficiency by keeping the process time short.
  • a nitrogen gas can be used preferably instead of the oxygen gas. Since the nitrogen reacts more gently than the oxygen, the use of the nitrogen gas is effective in the case where reaction films formed on the surfaces of TMR elements are desired to be thinner in response to further advancement of the downscaling of the TMR elements.
  • a magnetic multilayer film is formed on a substrate 100 , the magnetic multilayer film including a lower electrode layer 101 , an antiferromagnetic layer 102 , a magnetization pinned layer 103 , a tunnel barrier layer 104 , a magnetization free layer 105 , and an upper electrode layer 106 .
  • each of the magnetization pinned layer 103 and the magnetization free layer 105 does not have to be a single layer as illustrated in FIG. 7A , or may be formed of a multiplayer film including several layers.
  • the antiferromagnetic layer 102 may be located above the tunnel barrier layer 104
  • a ferromagnetic layer located on top of the tunnel barrier layer 104 may be formed as a magnetization pinned layer 105
  • a ferromagnetic layer located under the tunnel barrier layer 104 may be formed as a magnetization free layer 103 .
  • the photoresist is not limited to a single layer, but may be formed by using a multilayer resist process or may be formed in a lamination structure in which an antireflective film is formed as a lower layer.
  • the upper electrode layer 106 is processed by using this photomask 107 with RIE technique or the like.
  • the photomask is removed by ashing with oxygen gas, for example, thereby to form a metal mask layer 106 a ( FIG. 7B ).
  • the reactive etching in this RIE is performed by using a chlorine gas, for example, as a main ingredient.
  • the gas used for the RIE technique is not particularly limited, but an inert gas of Ar or the like may also be used.
  • the magnetic multilayer film is processed by, for example, the RIE technique using the metal mask layer 106 a as a mask, and thereby the magnetic multilayer film including the lower electrode layer 101 , the antiferromagnetic layer 102 , the magnetization pinned layer 103 , tunnel barrier layer 104 , and the magnetization free layer 105 is separated into multiple films ( FIG. 7C ).
  • the multiple separated magnetic multilayer films each including the lower electrode layer 101 , the antiferromagnetic layer 102 , the magnetization pinned layer 103 , tunnel barrier layer 104 , and the magnetization free layer 105 are formed on the substrate 100 .
  • the etching by the RIE technique using a gas containing, for example, CH 3 OH as a main ingredient can be performed in the etching chamber (RIE chamber) 303 .
  • a gas containing, for example, CH 3 OH as a main ingredient
  • Any gas not particularly limited, may be used for the RIE technique as long as the purpose can be achieved, and a hydrocarbon gas of CH 4 , C 2 H 4 , or the like, or an inert gas of Ar or the like may also be used.
  • the etching may employ what is termed as “Stop on Dielectric” in which only the upper electrode layer 106 and the magnetization free layer 105 are processed.
  • all of the lower electrode layer 101 to the magnetization free layer 105 are processed by the RIE in this embodiment, but may be processed by the ion beam etching (IBE) instead of the RIE.
  • IBE ion beam etching
  • the side walls of the separated magnetic multilayer films on the substrate are irradiated with Ar ion beams at a predetermined angle ( FIG. 7D ).
  • FIG. 8 is a graph presenting a relationship between an etch rate and an incident angle of Ar particles on Ti as an example of a material to be etched.
  • the abscissa axis indicates an incident angle of Ar particles on a substrate surface to be processed
  • the ordinate axis indicates an etch rate expressed in an arbitrary unit.
  • the incident angle of Ar particles incident perpendicularly on the substrate surface to be processed is defined as 0 degrees.
  • a solid line indicates a relationship between the etch rate and the incident angle of Ar particles on a surface in parallel to the substrate surface to be processed
  • a broken line indicates a relationship between the etch rate and the incident angle of Ar particles on a surface perpendicular to the substrate surface to be processed.
  • FIG. 9 presents a relationship between an etch rate and an incident angle of Ar particles in the case where the aforementioned tilt is taken into account.
  • a solid line indicates a relationship between the etch rate and the incident angle of Ar particles on a substance having a surface in parallel to the substrate surface to be processed as in FIG. 8 .
  • a broken line indicates a relationship between the etch rate and the incident angle of Ar particles on a surface tilting at 10 degrees from the direction perpendicular to the substrate surface to be processed.
  • the incident angle of Ar particles can be defined by a relationship between the extraction electrode 509 and the substrate mount surface of the ESC electrode 512 .
  • the incidence of most of the Ar particles on the surface to be processed is made in the direction perpendicular to the surface to be processed of the substrate mounted on the ESC electrode 512 .
  • the Ar incident angle can be defined as 0 degrees.
  • the gas is immediately switched, and the oxygen gas is introduced into the process chamber 304 .
  • an oxide layer 109 is formed on the surface of the magnetic body ( FIG. 7E ).
  • the layer thickness of the oxide layer 109 may be, for example, about 2 nm.
  • the oxidation progress hardly progresses at a room temperature (15° C. to 35° C.).
  • the bared surface of the magnetic body processed by the Ar ion beams is a chemically active surface, the oxidation tends to progress easily.
  • the substrate on which the oxide layers 109 are formed on the surfaces of the magnetic bodies is unloaded from the process chamber 304 and loaded to the protection layer formation chamber 305 by the substrate transfer means provided to the vacuum transfer chamber 302 .
  • a protection layer 110 made of a silicon nitride film is formed by the CVD technique, for example, on the substrate having the oxide layers 109 formed thereon.
  • the protection layer 110 is not limited to the silicon nitride film, but may be an aluminum nitride film, a silicon oxynitride film, or the like.
  • an interlayer insulating film 111 made of a silicon oxide film is formed by the CVD technique, for example, on the substrate having the protection layer 110 formed thereon ( FIG. 7F ).
  • the interlayer insulating film 111 is not limited to the silicon oxide film, but any of various insulating films may be used.
  • the substrate without any additional process performed thereon is unloaded to the vacuum transfer chamber, and is transferred to the protection layer formation chamber.
  • a degree of vacuum in the vacuum transfer chamber is lower than that of the process chamber.
  • the oxide layers are formed on the surfaces of the elements without the substrate unloaded to the vacuum transfer chamber.
  • the element properties can be inhibited from degrading.
  • FIG. 10 presents a sequence provided to the IBE apparatus in this embodiment.
  • a sample ( FIG. 7C ) obtained by etching a substrate (wafer) on which a multilayer film is formed is loaded to and set in the process chamber where the Ar ion beam irradiation and the oxidation process are to be performed.
  • the acceleration energy of the Ar ions may be set to, for example, 200 eV.
  • the deposit removal effect is considered to be approximately unchanged in a range of eV to 500 eV is considered to be nearly equal.
  • the acceleration energy of 20 eV to 200 eV or less is preferable in order to inhibit the ion beams from damaging the stacked films.
  • the Ar gas supply and the plasma generation are stopped, and then immediately the process chamber is filled with the oxygen gas.
  • the introduction of the oxygen gas is performed within 30 seconds, for example, from the stoppage of the Ar gas supply and the termination of the plasma generation. Such quick introduction of the oxygen gas within a short period of time after the stoppage of the Ar gas supply and so forth enables reliable formation of the oxide layers.
  • FIG. 11 is a graph presenting a relationship between the oxidation process time and the layer thickness of the oxide layer, in which the abscissa axis indicates the oxidation process time, and the ordinate axis indicates the layer thickness of the oxide layer.
  • the layer thickness of the oxide layer was measured by X-way reflectivity measurement.
  • any of operations of heating and cooling the sample stage, generating plasma, and so forth may be performed for the purpose of increasing or decreasing the layer thickness of the oxide layer.
  • the above embodiment is described for the case where the oxygen gas is introduced to the chamber where the side portions of multiple stacked films are just irradiated with the ion beams, and thereby the oxide layers are formed on the surfaces of the multiple stacked films.
  • the gas to be introduced is not limited to the oxygen gas.
  • any gas containing oxygen can be used.
  • an oxidizing gas such as a dinitrogen monoxide (N 2 O) gas, a nitrogen dioxide (NO 2 ) gas, an ozone (O 3 ) gas, or a water vapor (H 2 O) gas may be used.
  • a mixed gas of them may be used.
  • an inert gas such as an argon gas may be introduced together with the oxidizing gas.
  • Such oxidizing gas may be set to have a partial pressure within the same range as the aforementioned range of the oxygen gas.
  • nitride layers may be formed.
  • nitride layers may be formed on the surfaces of the multiple stacked films through a nitridation process by introducing a nitriding gas, instead of the oxidizing gas, to the process chamber after the ion beam irradiation.
  • a nitriding gas a nitrogen gas, an ammonia (NH 3 ) gas, or the like may be used. Or, a mixed gas of them may be used. Further, an inert gas such as an argon gas may be introduced together with the nitriding gas.
  • a preferable partial pressure of the nitriding gas is within a range of 1.0 ⁇ 10 ⁇ 1 Pa to 2.0 ⁇ 10 ⁇ 3 Pa for the same reasons as described for the oxygen gas.
  • a preferable layer thickness of the nitride layer is within a range of 1.5 nm to 3.0 nm for the same reasons as described for the oxide layer.

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