US20140374779A1 - Light-emitting device and light-emitting array - Google Patents

Light-emitting device and light-emitting array Download PDF

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Publication number
US20140374779A1
US20140374779A1 US14/301,492 US201414301492A US2014374779A1 US 20140374779 A1 US20140374779 A1 US 20140374779A1 US 201414301492 A US201414301492 A US 201414301492A US 2014374779 A1 US2014374779 A1 US 2014374779A1
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light
electrode
layer
emitting device
conductive
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Wei-Jung CHUNG
Jennhwa FU
Cheng-Hsien Li
Chi-Hao Huang
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Epistar Corp
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Epistar Corp
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Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUANG, CHI-HAO, CHUNG, WEI-JUNG, LI, CHENG-HSIEN, FU, JENNHWA
Publication of US20140374779A1 publication Critical patent/US20140374779A1/en
Priority to US15/294,256 priority Critical patent/US10297718B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Definitions

  • the disclosure is related to a light-emitting device, and more particularly, a light-emitting device and a light-emitting array with a connecting layer between a substrate and a light-emitting stack.
  • LEDs light-emitting diodes
  • An LED has the advantages of good environment tolerance, a long service life, portability, and low power consumption and is regarded as another option for the lighting application. LEDs are widely adopted in different fields, for example, traffic lights, backlight modules, street lights, and medical devices and replaces conventional light sources gradually.
  • An LED has a light-emitting stack which is epitaxially grown on a conductive substrate or an insulting substrate.
  • the so-called “vertical LED” has a conductive substrate and includes an electrode formed on the top of a light emitting layer; the so-called “lateral LED” has an insulative substrate and includes electrodes formed on two semiconductor layers which have different polarities and exposed by an etching process.
  • the vertical LED has the advantages of small light-shading area for electrodes, good heat dissipating efficiency, and no additional etching epitaxial process, but has a shortage that the conductive substrate served as an epitaxial substrate absorbs light easily and is adverse to the light efficiency of the LED.
  • the lateral LED has the advantage of radiating light in all directions due to a transparent substrate used as the insulator substrate, but has shortages of poor heat dissipation, larger light-shading area for electrodes, and smaller light-emitting area caused by epitaxial etching process.
  • the abovementioned LED can further connects to/with other device for forming a light-emitting device.
  • the LED can connect to a carrier by a side of a substrate or by soldering material/adhesive material between a sub-carrier and the LED.
  • a light-emitting device includes a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a first surface, a second surface opposite to the first surface, a first portion connecting to the first surface, and a second portion connecting to the first portion; an opening penetrating the first portion and having a first width; a depression connecting to the opening and penetrating the second semiconductor layer, the active layer, and the second portion of the first semiconductor layer, wherein the depression includes a second width wider than the first width, and the depression includes a bottom to expose the second surface; and an electrode located in the depression and corresponding to the opening.
  • a light-emitting array includes a substrate having an upper surface, light-emitting units on the upper surface of the substrate, wherein each of the light-emitting units includes a first surface and a second surface opposite to the first surface and toward to the upper surface; an insulative layer, between the substrate and the light-emitting unit, covering the second surface of each of the light-emitting units; and at least one of wires embedded in the insulative layer, wherein each of the at least one of wires includes a conductive channel, penetrating the insulative layer and electrically connecting with the second surface, and a bridge electrically connecting with the conductive channel, and at least one of the bridges electrically connects two of the light-emitting units via a plurality the conductive channels.
  • FIGS. 1A to 1H illustrate a light-emitting device in accordance with a manufacturing method of a first embodiment of the application.
  • FIG. 2 illustrates a light-emitting device in accordance with a second embodiment of the application.
  • FIG. 3 illustrates a light-emitting device in accordance with a third embodiment of the application.
  • FIG. 4 illustrates an electrode layout of the light-emitting device in accordance with the first embodiment of the application.
  • FIG. 5 illustrates an electrode layout of the light-emitting device in accordance with the forth embodiment of the application.
  • FIG. 6 illustrates an electrode layout of the light-emitting device in accordance with a fifth embodiment of the application.
  • FIG. 7 illustrates an electrode layout of the light-emitting device in accordance with a sixth embodiment of the application.
  • FIG. 8 illustrates an electrode layout of the light-emitting device in accordance with a seventh embodiment of the application.
  • FIG. 9 illustrates an electrode layout of the light-emitting device in accordance with an eighth embodiment of the application.
  • FIG. 10 illustrates an electrode layout of the light-emitting device in accordance with a ninth embodiment of the application.
  • FIG. 11 illustrates a light-emitting array in accordance with a tenth embodiment of the application.
  • FIG. 12 illustrates a light-emitting array in accordance with an eleventh embodiment of the present application.
  • FIG. 13 illustrates a light-emitting array in accordance with a twelfth embodiment of the application.
  • FIG. 14 illustrates a light-emitting array in accordance with a thirteenth embodiment of the application.
  • a light-emitting stack 108 which is epitaxially grown on a growth substrate 101 includes a first semiconductor layer 102 , a second semiconductor layer 106 , and an active layer 104 between the first semiconductor layer 102 and the second semiconductor layer 106 .
  • the light-emitting stack 108 can be a nitride light-emitting stack and a material of the light-emitting stack 108 containing elements like aluminum (Al), indium (In), gallium (Ga), or nickel (N).
  • the growth substrate 101 can be made of a transparent insulative substrate, such as sapphire, or a conductive substrate, such as silicon (Si) substrate or silicon carbide (SiC) substrate.
  • a buffer layer 103 can be formed on the growth substrate 101 before forming the light-emitting stack 108 .
  • a material of the light-emitting stack 108 can contain elements like aluminum (Al), gallium (Ga), indium (In), phosphorus (P), or arsenic (As), and a material of the growth substrate 101 can be gallium arsenide (GaAs).
  • the first semiconductor layer 102 , the active layer 104 , the second semiconductor layer 106 are epitaxially grown on the growth substrate 101 .
  • the first semiconductor layer 102 can be an n-type semiconductor
  • the second semiconductor layer 106 can be a p-type semiconductor
  • a structure of the light-emitting stack 108 includes a single heterostructure (SH), a double-side double heterostructure (DDH), or multi-quantum well (MQW) structure.
  • SH single heterostructure
  • DDH double-side double heterostructure
  • MQW multi-quantum well
  • a depression 105 is formed, penetrates the second semiconductor layer 106 and the active layer 104 , and exposes the first semiconductor layer 102 .
  • the depression 105 has a pattern and an electrode 110 which is corresponding to the pattern is formed in the depression 105 .
  • a conductive layer 112 is formed on the second semiconductor layer 106 .
  • the electrode 110 electrically connects with only the first semiconductor layer 102 , and in a cross-sectional view, there is a gap between two sides of the electrode 110 and the depression 105 so the electrode 110 is insulated from the active layer 104 and the second semiconductor layer 106 .
  • the conductive layer 112 has ohmic contact with the second semiconductor layer 106 and can be a transparent conductive layer, such as indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum-doped zinc oxide (A ZO), or metal material, such as, nickel (Ni), platinum (Pt), palladium (Pd), silver (Ag), or chromium (Cr).
  • the electrode 110 can be aluminum (Al), titanium (Ti), chromium (Cr), platinum (Pt), gold (Au), or combinations thereof.
  • a barrier 116 covering the conductive layer 112 and an insulative structure 114 covering the electrode 110 are formed.
  • the barrier 116 covers all surface of the conductive layer 112 except the region contacting the second semiconductor layer 106 .
  • the pattern of the insulative structure 114 is substantially corresponding to the pattern of the electrode 110 while the insulative structure 114 fills a space between the electrode 110 and the depression 105 .
  • the upper surface 114 a of the insulative structure 114 and the upper surface 116 a of the barrier 116 are coplanar and the barrier 116 horizontally surrounds the insulative structure 114 , except the portion in the depression 105 .
  • the insulative structure 114 includes transparent material and is formed by evaporating, sputtering, or spin-on glass (SOG) to form single-layer of SiO 2 , single-layer of TiO 2 , or single-layer of Si 3 N 4 and then solidifying.
  • the barrier 116 can be single-layer or multi-layer structure and includes titanium (Ti), tungsten (W), platinum (Pt), titanium tungsten (TiW) or combinations thereof.
  • a reflective layer 118 is formed on a plane on which the upper surface 114 a of the insulated layer 114 and the upper surface 116 a of the barrier 116 lie.
  • the reflective layer 118 can include aluminum (Al).
  • a conductive substrate 122 is provided and connects to a metal layer 118 via a joining structure 120 .
  • the joining structure 120 includes gold (Au), indium (In), nickel (Ni), titanium (Ti), or combinations thereof. Consequentially, a process of removing the growth substrate 101 is performed.
  • the conductive substrate 122 includes a semiconductor material, such as silicon (Si), or a metal material, such as, cobalt (Cu), tungsten (W), or aluminum (Al). Moreover, a surface of the conductive substrate 122 can be graphene.
  • a laser ray (not shown in FIG. 1F ) is provided to a back surface of the growth substrate 101 to dissolve a buffer layer 103 by energy from the laser ray.
  • the energy from the laser ray can evaporate nitrogen in gallium nitride (GaN), so as to dissolve the buffer layer 103 and remove the growth substrate 101 so the first semiconductor 102 is exposed.
  • GaN gallium nitride
  • the remaining buffer layer 103 on the first semiconductor layer 102 is further removed.
  • a cleaning step is performed to mainly remove the remaining gallium in the step by inductively coupled plasma (ICP), and the surface of the first semiconductor layer can be further cleaned by HCl or H 2 O 2 .
  • a roughed structure 126 is formed on the first surface 102 a of the first semiconductor layer 102 by etching.
  • the roughed structure 126 can have a regular or irregular rough surface with a roughness of 0.5 ⁇ 1 ⁇ m, and an opening 124 is formed by removing a portion of the first semiconductor layer 102 which is on the electrode 110 .
  • the depression 105 has width W 1 greater than a width W 2 of the opening 124 , and therefore, after the depression 105 and the opening are formed in sequence, a second surface 102 d opposite to the first surface 102 a is formed at the bottom of the first semiconductor layer 102 connecting to the depression 105 , and the electrode 110 connects to the second surface 102 d and is formed in the depression 105 corresponding to the opening 124 wherein the electrode has a width W 3 greater than the width W 2 .
  • the upper surface 110 a of the electrode 110 has a contact area 110 b connecting to the second surface 102 d of the first semiconductor layer 102 and an exposed area 110 c exposed by the opening 124 .
  • a thickness of the first semiconductor 102 can be 3 ⁇ 4 ⁇ m while the first semiconductor 102 has a first portion 102 b and a second portion 102 c.
  • the thickness of the first portion 102 b is about equal to the depth of the opening 124 , which is about 1.5 ⁇ 3 ⁇ m.
  • the thickness of the second portion 102 c corresponding to the depression 105 is about 1 ⁇ 1.5 ⁇ m. Because the electrode 110 electrically connects to the first semiconductor layer 102 while is not formed on the first surface 102 a, the electrode 110 does not shield the light from the light-emitting device 100 .
  • the light-emitting device 100 disclosed in the embodiment includes the conductive substrate 122 ; the joining structure 120 formed on the conductive substrate 122 ; the reflective layer 118 formed on the joining structure 120 ; the conductive structure 117 including the barrier 116 formed on a portion of the reflective layer 118 , and the conductive layer 112 covered by the barrier 116 ; the light-emitting stack 108 including the first semiconducting layer 102 , the active layer 104 , and the second semiconducting layer 106 electrically connecting with the conductive layer 112 ; the insulative structure 114 formed on a portion of the reflective layer 118 and penetrating the second semiconducting layer 106 , the active layer 104 , and the second part 102 c of the first semiconducting layer 102 ; the electrode 110 covered by the insulative structure 124 wherein the upper surface 110 a of the electrode 110 connects to the first semiconducting layer 102 ; and the opening 124 penetrating the
  • the insulative structure 114 insulates the electrode 110 from the second semiconductor 106 and the active layer 104 , and the electrode 110 and the active layer 104 are on different regions along the horizontal direction of the light-emitting device 100 while the whole active layer 104 is located above the conductive structure 117 . Therefore, the light from the active layer 104 is not shielded by the electrode 110 of the light-emitting device 100 and the conductive structure 117 .
  • the upper surface 110 a of the electrode 110 can be connected with an external power source.
  • FIG. 2 illustrates a light-emitting device in accordance with a second embodiment of the application.
  • the second embodiment and the first embodiment are similar, but the difference between them is that a wiring electrode 211 is formed on an electrode 210 and the wiring electrode 211 is in an opening 204 for a soldering ball for wiring (not shown in FIG. 2 ).
  • FIG. 3 illustrates a light-emitting device in accordance with a third embodiment of the application.
  • the third embodiment is similar to the aforementioned embodiments, but the differences between them are mentioned as follows.
  • a conductive layer 308 which electrically connects with a second semiconductor layer 306 is a transparent conductive layer without reflectivity, such as indium tin oxide (ITO), indium zinc oxide (IZO), or aluminum-doped zinc oxide (Al ZO), and there is no barrier as shown in the first embodiment.
  • An insulative structure 314 can include an insulative layer 314 a between a light-emitting stack 310 and a reflective layer 318 , and an insulative portion 314 b covers the electrode 311 .
  • a plurality of conductive channels 316 penetrates the insulative layer 314 a and connects the conductive layer 308 and the reflective layer 318 by its two ends respectively.
  • a joining structure 320 and a conductive substrate 322 same as those described in the first embodiment are below the reflective layer 318 .
  • the conductive channel 316 can be a metal well to fill pores like titanium (Ti), aluminum (Al), nickel (Ni), chromium (Cr), or copper (Cu).
  • the insulative structure 314 can be a transparent insulative material and is formed by evaporating, sputtering, or spin-on glass (SOG) to form single-layer of SiO 2 , single-layer of TiO 2 , or single-layer of Si 3 N 4 , and then solidifying or alternatively stacking two different films with different index of refraction to form a distributed Bragg reflector (DBR).
  • SOG spin-on glass
  • FIG. 4 illustrates an electrode layout of the light-emitting device in accordance with the first embodiment of the application.
  • the electrode layout can also be utilized in the second embodiment and the third embodiment. In the embodiment, it shows only patterns of the electrode 110 and the conductive structure 117 for clearly showing the pattern of the electrode. From top view, the conductive substrate 122 of the light-emitting device 100 is a rectangle with a size of 1 mil to 70 mils.
  • the electrode disclosed in the embodiment includes a wiring electrode 110 and an extensive electrode 111 extending from the wiring electrode 110 .
  • the wiring electrode 110 is located near a corner of the rectangle of the light-emitting device 100 , and the extensive electrode 111 includes a first extensive electrode 111 b along outer edges of the light-emitting device 100 and a second extensive electrode 111 a surrounding by and connecting to the first extensive electrode 111 b.
  • the first extensive electrode 111 b and the second electrode 111 a form another rectangle.
  • the wiring electrode 110 , and/or the extensive electrode 111 , and the conductive structure 117 are formed on different regions of the conductive substrate 122 and do not overlap with one another. Therefore, the conductive structure 117 as shown in the region with slash lines substantially complements the patterns of the wiring electrode 110 and the extensive electrode 111 .
  • FIG. 5 shows an electrode layout of a light-emitting device in accordance with a fourth embodiment of the application.
  • the electrode layout can be utilized in the first embodiment to the third embodiment.
  • FIG. 5 illustrates only the electrodes and the conductive structure of the above-mentioned embodiment for clearly showing patterns on the electrodes.
  • a conductive substrate 522 of a light-emitting device 500 is a rectangle.
  • the electrodes shown in the embodiment include a wiring electrode 510 and an extensive electrode 511 extending from the wiring electrode 510 .
  • the wiring electrode 510 is substantially located at a geometric center of the light-emitting device 500 and the extensive electrode 511 optionally includes a plurality of radial branches extending from the wiring electrode 510 .
  • the wiring electrode 510 , and/or the extensive electrode 511 , and a conductive structure 517 are formed on different regions of the conductive substrate 522 and do not overlap with one another. Therefore, the conductive structure 517 as shown in the region with slash lines substantially complements the pattern formed by the wiring electrode 510 and the extensive electrode 511 .
  • FIG. 6 shows an electrode layout of a light-emitting device in accordance with a fifth embodiment of the application.
  • the electrode layout can be utilized in the first embodiment to the third embodiment.
  • a conductive substrate 622 of a light-emitting device 600 is a rectangle.
  • the electrodes disclosed in the embodiment include a wiring electrode 610 and an extensive electrode 611 extending from the wiring electrode 610 .
  • the wiring electrode 610 is substantially located at a geometric center of the light-emitting device 600 and the extensive electrode 611 includes a plurality of radial branches extending from the wiring electrode 610 .
  • a length of the radial branch of the extensive electrode 611 along a diagonal of the rectangle of the light-emitting device 600 is longer than a length of the radial branch along a side of the rectangle.
  • the wiring electrode 610 , and/or the extensive electrode 611 , and a conductive structure 617 are formed on different regions of the conductive substrate 622 and do not overlap with one another. Therefore, the conductive structure 617 as shown in the region with slash lines complements the pattern formed by the wiring electrode 610 and extensive electrode 611 .
  • FIG. 7 illustrates an electrode layout of a light-emitting device in accordance with a sixth embodiment of the application.
  • the electrode layout can be utilized in the first embodiment to the third embodiment.
  • a conductive substrate 722 of a light-emitting device 700 is a rectangle.
  • the electrodes disclosed in the embodiment include a wiring electrode 710 and an extensive electrode 711 extending from the wiring electrode 710 .
  • the wiring electrode 710 is substantially located at a corner of the rectangle of the light-emitting device 700
  • the extensive electrode 711 includes a plurality of radial branches extending from the wiring electrode 710 with lengths that vary with their extensive angles respectively.
  • the wiring electrode 710 , and/or the extensive electrode 711 , and a conductive structure 717 are formed on different regions of the conductive substrate 722 and do not overlap with one another. Therefore, the conductive structure 717 as shown in the region with slash lines substantially complements the pattern formed by the wiring electrode 710 and extensive electrode 711 .
  • FIG. 8 illustrates an electrode layout of a light-emitting device in accordance with a seventh embodiment of the application.
  • the electrode layout can be utilized in the first embodiment to the third embodiment. From top view, a conductive substrate 822 of a light-emitting device 800 is a rectangle.
  • the electrodes disclosed in the embodiment include wiring electrodes 810 a and 810 b near a side of the rectangle of the light-emitting device 800 , an extensive electrode 811 including radial branches 811 a and 811 b extending from the wiring electrode 810 a and 810 b to another side of the rectangle, a radial branch 811 c connecting to the wiring electrodes 810 a and 810 b by its two ends and parallel to a side of the rectangle, and a radial branch 811 d extending from the radial branch 811 c and parallel to the radial branches 811 a and 811 b.
  • the wiring electrode 810 a and 810 b, and/or the extensive electrode 811 , and the conductive structure 817 are formed on different regions of the conductive substrate 822 and do not overlap with one another, and therefore the conductive structure 817 as shown in the region with slash lines substantially complements the patterns of the wiring electrode 810 a and 810 b and extensive electrode 811 .
  • FIG. 9 it illustrates an electrode layout of a light-emitting device in accordance with an eighth embodiment of the application.
  • the electrode layout can be utilized in the first embodiment to the third embodiment.
  • a conductive substrate 922 of a light-emitting device 900 is a rectangle.
  • the electrodes disclosed in the embodiment include wiring electrodes 910 a and 910 b near a side of the rectangle of the light-emitting device 900 and an extensive electrode 911 including radial branches 911 a and 911 b extending from the wiring electrodes 910 a and 910 b to another side of the rectangle.
  • the embodiment is similar to the seventh embodiment, but the differences include that the radial branches 911 a and 911 b are sinuous and extending from the wiring electrodes 910 a and 910 b, and there are multiple radial branches 911 a and 911 b extended from the wiring electrodes 910 a and 910 b respectively.
  • the wiring electrode 910 , and/or the extensive electrode 911 , and the conductive structure 917 are formed on different regions of the conductive substrate 922 and do not overlap with one another. Therefore, the conductive structure 917 as shown in the region with slash lines substantially complements the patterns of the wiring electrode 910 and extensive electrode 911 .
  • FIG. 10 illustrates an electrode layout of a light-emitting device in accordance with a ninth embodiment of the application.
  • the electrode layout can be utilized in the first embodiment to the third embodiment. From top view, a conductive substrate 1022 of the light-emitting device is a rectangle.
  • the electrodes disclosed in the embodiment include two wiring electrodes 1010 a and 1010 b near two corners of the rectangle of the conductive substrate 1022 , and an extensive electrode 1011 including a first radial branch 1011 a along the rectangle of the conductive substrate 1002 and connecting to the wiring electrodes 1010 a and 1010 b, and a second radial branch 1011 b connecting to two opposite sides of the rectangle of the first radial branch 1011 a and forming a net pattern with the first radial branch 1011 a.
  • the wiring electrode 1010 , and/or the extensive electrode 1011 , and the conductive structure 1017 are formed on different regions of the conductive substrate 1022 and do not overlap with one another. Therefore, the conductive structure 1017 as shown in the region with slash lines substantially complements the patterns of the wiring electrode 1010 and extensive electrode 1011 .
  • FIG.11 illustrates a light-emitting array in accordance with a tenth embodiment of the application.
  • the light-emitting array 1100 includes an insulative substrate 1110 including an upper surface 1110 a, a joining layer 1124 formed on the upper surface 1110 a and being insulative, an insulative layer 1114 formed on the joining layer 1124 , a plurality of light-emitting units 112 formed on the insulative layer 1114 , wherein each of the light-emitting units 112 includes a first surface 1113 and a second surface 1115 .
  • the first surface 1113 has a first polarity
  • the second surface 115 is toward to the insulative substrate 1110 opposite to the first surface 1113 and includes a first region 1115 a with the first polarity and a second region 1115 b with a second polarity.
  • a plurality of wires 1116 is embedded in the insulative layer 1114 and electrically connecting with two of the light-emitting units 1112 , for example, connecting to the second region 1115 b of at least one of the light-emitting units 1112 and the first region 1115 a of another one of the light-emitting units 1112 .
  • a first electrode 1118 is formed on the insulative layer 1114 , electrically connecting with the first region 1115 a of one of the light-emitting units 1112 , and located in different region than that of the light-emitting units 1112 on the insulative layer 1114 .
  • a second electrode 1120 is formed on the insulative layer 1114 , electrically connecting with the second region 1115 b of one of the light-emitting units 1112 , and located in different region than that of the light-emitting units 1112 on the insulative layer 1114 .
  • the light-emitting units 1112 are epitaxially grown on the same wafer (not shown in figures). After epitaxially growth, the first surface 1113 connects to the wafer and the second surface 1115 faces up. The first region 1115 a and the second region 1115 b of the second surface 1115 can be defined by an etching process as the light-emitting units 1112 are not defined yet. After carrying the light-emitting unit 1112 on the insulative substrate 1110 via the joining layer 1124 , the wafer can be removed and the first surface 1113 is exposed. In sequence, a plurality of the light-emitting units 1112 electrically insulated from one another can be formed from the first surface 1113 by an etching process. Additionally, the first surface 1113 similar to the one in the first embodiment is a rough surface.
  • the insulative layer 1114 can include a first insulative layer 1114 a and a second insulative layer 1114 b and is made of silicon oxide SiO 2 , for example.
  • the first insulative layer 1114 a can cover the first region 1115 a and the second region 1115 b of the second surface 1115 to form a surface substantially parallel to the upper surface 1110 a of the insulative substrate 1110 .
  • the wire 1116 includes a conductive channel 1116 a penetrating the first insulative layer 1114 a for electrically connecting with the first region 1115 a or the second region 1115 b, and a bridge 1116 b laterally extending along a surface of the first insulative layer 1114 a and connecting to the conductive channels 1116 a of the neighboring light-emitting units 1112 .
  • the bridge 1116 b can connect to identical/different polarities of two different light-emitting units 1112 for forming a serial/parallel/in inverse-parallel connection.
  • the second insulative layer 1114 b can cover the insulative layer 1114 a and the bridge 1116 b.
  • the light-emitting unit 1112 includes a first semiconductor layer 1101 having the first surface 1113 and the first region 1115 a of the second surface 1115 , a second semiconductor layer 1102 having the second region 1115 b of the second surface 1115 , and an active layer 1103 between the first semiconductor layer 1101 and the second semiconductor layer 1102 .
  • the first semiconductor layer 1101 has the first polarity and the second semiconductor layer 1102 has the second polarity different from the first polarity.
  • the first polarity of the first semiconductor layer 1101 is n-type; the second polarity of the semiconductor layer 1102 is p-type.
  • the first region 1115 a of the second surface 1115 is farther from the insulative substrate 1110 than the second region 1115 b to expose the first semiconductor layer 1101 .
  • the insulative layer 1114 covers the second surface 1115 and fills a convex-concave structure formed by the first region 1115 a and the second region 1115 b.
  • first regions 1115 a of the light-emitting unit 1112 which connect to a plurality of the conductive channels 1116 a, and lateral sides of the conductive channels 1116 a which connect to the first regions 1115 a are covered by the first insulative layer 1114 a so as to be electrically insulated from the second region 1115 b of the second semiconductor 1102 of the individual light-emitting unit 1112 .
  • a conductive layer 1104 with reflectivity and a barrier 1105 covering the conductive layer 1104 can be formed on the second region 1115 b.
  • the first electrode 1118 can electrically connect with the first region 1115 a of the light-emitting unit 1112 via the bridge 1116 b; the second electrode 1120 can electrically connect with the second region 1115 b of the light-emitting unit 1112 via the barrier 1105 .
  • the bridge 1116 b connecting to the first electrode 1118 is co-planar with a first exposing surface 1114 c of the second insulative layer 1114 b;
  • the barrier 1105 connecting to the second electrode 1120 is co-planar with a second exposing surface 1114 d of the first insulative layer 1114 a wherein the first exposing surface 1114 c is closer to the insulative substrate 1110 than the second exposing surface 1114 d.
  • a light-emitting array 1100 including a circuit in series/in parallel/in inversed-parallel can be formed between the first electrode 1118 and the second electrode 1120 .
  • the wires 1116 are located below all of the light-emitting units 1112 , and the first electrode 1118 and the second electrode 1120 are side by side with all of the light-emitting units 1112 . Accordingly, the light is not shaded by the wires 1116 , the first electrode 1118 , and the second electrode 1120 disclosed in the embodiment.
  • FIG. 12 illustrates a light-emitting array in accordance with an eleventh embodiment of the application.
  • the embodiment is similar to the tenth embodiment but the differences are as follows.
  • Each of light-emitting units 1222 disclosed in the embodiment is similar to those in the first embodiment, a first region 1215 a and a second region 1215 b can have patterns as shown in FIG. 4 to FIG. 10 .
  • the first region 1215 a of each of the light-emitting units 1222 has only a conductive channel 1216 a connecting to a bridge 1216 b, and a cross section of the conductive channel 1216 a is bigger than that of the tenth embodiment, wherein two of the conductive channels 1216 respectively electrically connect with the first region 1215 a of one of the light-emitting unit 1212 and the second region 1215 b of another one of the light-emitting unit 1212 and extend to a surface of a second insulative layer 1214 b devoid of the light-emitting units 1212 .
  • a first electrode 1218 and a second electrode 1220 can be formed on two of the conductive channels 1216 .
  • a light-emitting array 1200 including a circuit in series/in parallel/in inversed-parallel can be formed between the first electrode 1218 and the second electrode 1220 .
  • FIG. 13 illustrates a light-emitting array in accordance with a twelfth embodiment of the application.
  • the embodiment is similar to the tenth embodiment but the differences are as follows.
  • a conductive substrate 1310 disclosed in the embodiment replaces the insulative substrate disclosed in the tenth embodiment;
  • a conductive joining layer 1324 replaces the insulative joining layer disclosed the tenth embodiment.
  • conductive channels 1316 a are connected to a first region 1315 a of a light-emitting unit 1312 , penetrate a first insulative layer 1314 a and a second insulative layer 1314 b, and electrically connect with a conductive joining layer 1324 .
  • An electrode 1320 electrically connects with a second region 1315 b of the light-emitting unit 1312 , and a light-emitting array 1300 including a circuit in series/in parallel/in inverse-parallel can be formed between the electrode 1320 and the conductive substrate 1310 .
  • the first region 1315 a has the n-type polarity and the second region 1315 b has the p-type polarity.
  • the n-type polarity is conducted to the conductive substrate 1310 .
  • the p-type polarity can be conducted to the conductive substrate 1310 .
  • the material of the conductive substrate 1310 can be referred those disclosed in the first embodiment.
  • FIG. 14 illustrates a light-emitting array in accordance with a thirteenth embodiment of the application.
  • the embodiment is similar to the eleventh embodiment but the differences are as follows.
  • a conductive substrate 1410 disclosed in the embodiment replaces the insulative substrate of the eleventh embodiment, and a conductive joining layer 142 disclosed in the embodiment replaces the joining layer of the eleventh embodiment.
  • a conductive channel 1416 b connects to a second region 1415 b of a light-emitting unit 1412 , penetrates a first insulative layer 1414 a and a second insulative layer 1414 b, and electrically connects with a conductive joining layer 1424 .
  • An electrode 1418 electrically connects with a first region 1415 a of the light-emitting unit 1412 and a light-emitting array 1400 including a circuit in series/in parallel/in inverse-parallel can be formed between the electrode 1418 and the conductive substrate 1410 .
  • the first region 1415 a has the n-type polarity and the second region 1415 b has the p-type polarity.
  • the p-type polarity is conducted to the conductive substrate 1410 ; in other embodiments, the n-type polarity can be conducted to the conductive substrate 1410 .
  • the material of the conductive substrate 1410 can be referred to those disclosed in the first embodiment.

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DE102014108570A1 (de) 2014-12-24
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US10297718B2 (en) 2019-05-21
TWI661578B (zh) 2019-06-01

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