TW201407760A - 發光二極體陣列 - Google Patents
發光二極體陣列 Download PDFInfo
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- TW201407760A TW201407760A TW101128394A TW101128394A TW201407760A TW 201407760 A TW201407760 A TW 201407760A TW 101128394 A TW101128394 A TW 101128394A TW 101128394 A TW101128394 A TW 101128394A TW 201407760 A TW201407760 A TW 201407760A
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- layer
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- emitting diode
- light emitting
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- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 28
- 229910000679 solder Inorganic materials 0.000 claims description 21
- 238000005476 soldering Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 113
- 239000000463 material Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical class [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
本發明提供一發光二極體陣列,包含:一第一發光二極體,包含:一第一區域;一第二區域;一第一隔絕道位於第一區域與第二區域之間,且包含一電極絕緣層;及一電極連接層包覆第一區域;一第二發光二極體,包含:一半導體疊層;及一第二電性焊接墊位於此半導體疊層之上;及一第二隔絕道位於第一發光二極體與第二發光二極體之間,且包含一電性連接結構電性連接第一發光二極體與第二發光二極體。
Description
本發明關於一種發光二極體陣列結構及其製造方法,特別是關於一種利用電極絕緣層來改善漏電現象的結構及其製造方法。
發光二極體是半導體元件中一種被廣泛使用的光源。相較於傳統的白熾燈泡或螢光燈管,發光二極體具有省電及使用壽命較長的特性,因此逐漸取代傳統光源而應用於各種領域,如交通號誌、背
光模組、路燈照明、醫療設備等產業。
隨著發光二極體光源的應用與發展對於亮度的需求越來越高,如何增加其發光效率以提高其亮度,便成為產業界所共同努力的重要方向。
第14圖描述了現有技術中用於半導體發光元件的LED封裝體300:包括由封裝結構1封裝的半導體LED晶片2,其中半導體LED晶片2具有一p-n接面3,封裝結構1通常是熱固性材料,例如環氧樹脂(epoxy)或者熱塑膠材料。半導體LED晶片2透過一焊線(wire)4與兩導電支架5、6連接。因為環氧樹脂(epoxy)在高溫中會有劣化(degrading)現象,因此只能在低溫環境運作。此外,環氧樹脂(epoxy)具很高的熱阻(thermal resistance),使得第14圖的結構只提供了半導體LED晶片2高阻值的熱散逸途徑,而限制了LED封裝體1的低功耗應用。
本發明提供一發光二極體陣列,包含:一第一發光二極體,包含:一第一區域;一第二區域;一第一隔絕道位於第一區域與第二區域之間,且包含一電極絕緣層;及一電極連接層包覆第一區域;一第二發光二極體,包含:一半導體疊層;及一第二電性焊接墊位於此半導體疊層之上;及一第二
隔絕道位於第一發光二極體與第二發光二極體之間,且包含一電性連接結構電性連接第一發光二極體與第二發光二極體。
本發明提供另一發光二極體陣列,包含:一基板,具有一第一表面;複數個發光二極體位於第一表面上;複數個導電配線結構配置在該第一表面上,電性連接此些發光二極體;二電性焊接墊位於第一表面上;及一隔絕道位於任一電性焊接墊與任一發光二極體之間,其中電性焊接墊與發光二極體之距離不小於25μm。
為了使本發明之敘述更加詳盡與完備,請參照下列描述並配合第1圖至第13圖之圖式。依據本發明第一實施例之發光二極體陣列1000之結構及製造步驟如下:如第1圖所示,提供一成長基板10,例如砷化鎵基板;複數個發光二極體直接磊晶成長於此基板上。本實施例中發光二極體單元為100、200二個,但並不以此數目為限。其中,每一個發光二極體包含一第一導電型接觸層11、第一導電型半導體層12、一活性層13、以及一第二導電型半導體層14,如第2圖所示。其中,第一導電型接觸層11可為n型砷化鎵(n-GaAs);第一導電型半導體層12、一活性層13、以及一第二導電型半導體層14其材料包含一種或一種以上之元素選自鎵(Ga)、鋁
(Al)、銦(In)、砷(As)、磷(P)、氮(N)以及矽(Si)所構成群組;例如可為磷化鎵(GaP)或磷化鋁鎵銦(AlGaInP)。
於第二導電型半導體層14之上利用蒸鍍方式分別於選擇性區域形成電極結構,例如:至少一第二電性電極15b及複數個第二電性延伸電極15c。再於此些電極之上接合一暫時基板16後,移除成長基板10,如第3、4圖所示;其中暫時基板16可為玻璃。利用微影蝕刻製程將第一導電型接觸層11部份移除以形成複數個點狀結構並露出部分第一導電型半導體層12之下表面12a,再分別於部分下表面12a及複數個第一導電型接觸層11點狀結構之下形成一電性連接層17,如第5圖所示。上述第二電性電極15b及複數個第二電性延伸電極15c之材料可選自:鉻(Cr)、鈦(Ti)、鎳(Ni)、鉑(Pt)、銅(Cu)、金(Au)、鋁(Al)、鎢(W)、錫(Sn)、或銀(Ag)等金屬材料。電性連接層17之材料可為鍺/金。
利用濕式蝕刻法將第一導電型半導體層12之下表面12a蝕刻成一粗糙平面,如第6圖所示。另外提供一永久基板18,例如氧化鋁基板;並於此基板之上形成一接合層19,以形成如第7圖之結構;或於第一導電型半導體層12之下表面12a形成一接合層19(圖未示),再以接合層19將永久基板18接合於第一導電型半導體層12之下表面12a之下,使第6、7圖結構二者接合為一體,並使複數個第一導電型接觸層點狀結構11及電性連接層17介於第一導電型半導體層12之下表面12a
與接合層19之間,如第8圖所示。將暫時基板16移除,以裸露出第二電性電極15b、複數個第二電性延伸電極15c及部分第二導電型半導體層14之上表面14a,如第9圖所示。以感應耦合電漿離子蝕刻系統(Inductively Coupled Plasma Reactive Ion Etching System)由上向下乾式蝕刻第二導電型半導體層14、活性層13至裸露出第一導電型半導體層12之部分表面以形成一第一隔絕道20及一第二隔絕道21;其中第一隔絕道20將第一發光二極體100分隔為一第一區域50A及一第二區域50B,且此二區域之距離不小於25μm。第二隔絕道21則位於第一發光二極體100與第二發光二極體200之間。再利用乾式蝕刻或濕式蝕刻方法將第二導電型半導體層14之上表面14a蝕刻成一粗糙平面,如第10圖所示。再次以感應耦合電漿離子蝕刻系統將第二隔絕道21中的部份第一導電型半導體層12蝕刻並移除。因前後二次乾式蝕刻速率不同,造成第二隔絕道21中的第二導電型半導體層14、活性層13及第一導電型半導體層12之側壁形成一階梯狀,如第11圖所示。
於第一隔絕道20中,沿著第二區域50B的側壁以蒸鍍方法形成一電極絕緣層22,且此電極絕緣層22的高度大於第二區域50B的側壁高度。於第二隔絕道21中,沿著第二區域50B的部份上表面及側壁以蒸鍍方法形成一絕緣結構23及沿著第二發光二極體200的部份上表面及側壁以蒸鍍方法形成另
一絕緣結構23,其中電極絕緣層22和絕緣結構23的材料可為氧化矽,氮化矽,氧化鋁,氧化鋯,或氧化鈦等介電材料。再形成一電極連接層26包覆第一區域50A之側壁及上表面,其中電極連接層26材料可為鈦-金。因電極連接層26與第一發光二極體100之第一導電型半導體層12、活性層13及第二導電型半導體層14之間無法形成電性歐姆接觸,需藉由電性連接層17才能與第一導電型半導體層12形成電性歐姆接觸。在第二隔絕道21中,於第二區域50B的絕緣結構23之上方、側壁及第二隔絕道21底部形成一電性連接結構24;其中第一發光二極體100之第二導電型半導體層14藉由此電性連接結構24及電性連接層17與第二發光二極體200之第一導電型半導體層12形成串聯之電性連接。再於第二電性電極15b之上形成一第二電性焊接墊25。另外,電極連接層26可作為第一電性焊接墊之用,當電極連接層26和第二電性焊接墊25外接電源形成電性連接(圖未示)時,外接電源提供的電流可從電極連接層26經由電性連接層17流經發光二極體100之第一導電型半導體層12、活性層13、第二導電型半導體層14,並藉由電性連接結構24流至發光二極體200。其中電極連接層26及電性連接結構24可與此第二電性焊接墊25同時以蒸鍍方式形成,且組成材料可以相同。經由上述製程步驟後形成一具有二個發光二極體100,200串聯而成之發光二極體陣列1000。發光二極體100被第一隔絕道20分隔成一第一
區域50A及一第二區域50B;其中第一區域50A被被一電極連接層26所包覆。第二電性焊接墊25位於第二發光二極體200之部份上表面14a上,且電極連接層26之上表面與第二電性焊接墊25之上表面可位於相同的水平高度。
第13圖為本發明第二實施例之發光二極體陣列2000上視圖,其為包含第一發光二極體100及第二發光二極體200等共10個發光二極體且彼此電性串聯之發光二極體陣列。如第13圖所示,發光二極體陣列2000包含一基板30,具有一第一表面30a;10個發光二極體位於此第一表面上,包含第一發光二極體100及第二發光二極體200;複數個導電配線結構40配置在第一表面上,電性連接此些發光二極體;二電性焊接墊50,60位於第一表面上,且二電性焊接墊與一外接電源電性連接(圖未示);一隔絕道70位於任一電性焊接墊(例如:焊接墊50)與任一發光二極體(例如:發光二極體100)之間;其中此電性焊接墊與發光二極體之距離不小於25μm。當此電性焊接墊與發光二極體之距離過小時,在發光二極體蝕刻步驟時易有半導體物質殘留於發光二極體側壁上,造成漏電現象。此時於隔絕道70中於發光二極體的側壁形成一電極絕緣層80,可改善此現象。其中基板30係為一承載基礎,可包含導電基板或不導電基板、透光基板或不透光基板。
上述第一導電型半導體層12及第二導電型半導體層14係彼此中至少二個部分之電性、極性或摻雜物相異、或者係
分別用以提供電子與電洞之半導體材料單層或多層(「多層」係指二層或二層以上,以下同),其電性選擇可以為p型、n型、及i型中至少任意二者之組合。活性層13係位於第一導電型半導體層12及第二導電型半導體層14之間,為電能與光能可能發生轉換或被誘發轉換之區域。
依據本發明之實施例中所述之發光二極體其發光頻譜可以藉由改變半導體單層或多層之物理或化學要素進行調整。常用之材料係如磷化鋁鎵銦(AlGaInP)系列、氮化鋁鎵銦(AlGaInN)系列、氧化鋅(ZnO)系列等。活性層(未顯示)之結構係如:單異質結構(single heterostructure;SH)、雙異質結構(double heterostructure;DH)、雙側雙異質結構(double-side double heterostructure;DDH)、或多層量子井(multi-quantum well;MQW)。再者,調整量子井之對數亦可以改變發光波長。
於本發明之一實施例中,第一導電型接觸層11與成長基板10間尚包含一緩衝層(圖未示)。此緩衝層係介於二種材料系統之間,使基板之材料系統”過渡”至半導體系統之材料系統。對發光二極體之結構而言,一方面,緩衝層係用以降低二種材料間晶格不匹配之材料層。另一方面,緩衝層亦可以是用以結合二種材料或二個分離結構之單層、多層或結構,其可選用之材料係如:有機材料、無機材料、金屬、及半導體等;其可選用之結構係如:反射層、導熱層、導電層、、
抗形變層、應力釋放(stress release)層、應力調整(stress adjustment)層、接合(bonding)層、波長轉換層、及機械固定構造等。在一實施例中,此緩衝層之材料可為AlN、GaN、GaInP、InP、GaAs、AlAs,且形成方法可為濺鍍(Sputter)或原子層沉積(Atomic Layer Deposition,ALD)。
第二導電型半導體層14上更可選擇性地形成一第二導電型接觸層(未顯示)。接觸層係設置於第二導電型半導體層遠離活性層13之一側。具體而言,第二導電型接觸層可以為光學層、電學層、或其二者之組合。光學層係可以改變來自於或進入活性層(未顯示)的電磁輻射或光線。在此所稱之「改變」係指改變電磁輻射或光之至少一種光學特性,前述特性係包含但不限於頻率、波長、強度、通量、效率、色溫、演色性(rendering index)、光場(light field)、及可視角(angle of view)。電學層係可以使得第二導電型接觸層之任一組相對側間之電壓、電阻、電流、電容中至少其一之數值、密度、分布發生變化或有發生變化之趨勢。第二導電型接觸層之構成材料係包含氧化物、導電氧化物、透明氧化物、具有50%或以上穿透率之氧化物、金屬、相對透光金屬、具有50%或以上穿透率之金屬、有機質、無機質、螢光物、磷光物、陶瓷、半導體、摻雜之半導體、及無摻雜之半導體中至少其一。於某些應用中,第二導電型接觸層之材料係為氧化銦錫、氧化鎘錫、氧化銻錫、氧化銦鋅、氧化鋅鋁、與
氧化鋅錫中至少其一。若為相對透光金屬,其厚度係約為0.005μm~0.6μm。
以上各圖式與說明雖僅分別對應特定實施例,然而,各個實施例中所說明或揭露之元件、實施方式、設計準則、及技術原理除在彼此顯相衝突、矛盾、或難以共同實施之外,吾人當可依其所需任意參照、交換、搭配、協調、或合併。
雖然本發明已說明如上,然其並非用以限制本發明之範圍、實施順序、或使用之材料與製程方法。對於本發明所作之各種修飾與變更,皆不脫本發明之精神與範圍。
1‧‧‧封裝結構
2‧‧‧發光二極體晶片
3‧‧‧p-n接面
4‧‧‧焊線
5,6‧‧‧導電支架
10‧‧‧成長基板
11‧‧‧第一導電型接觸層
12‧‧‧第一導電型半導體層
12a‧‧‧粗化平面
13‧‧‧活性層
14‧‧‧第二導電型半導體層
14a‧‧‧粗化平面
15b‧‧‧第二電性電極
15c‧‧‧第二電性延伸電極
16‧‧‧暫時基板
17‧‧‧電性連接層
18‧‧‧永久基板
19‧‧‧接合層
20‧‧‧第一隔絕道
21‧‧‧第二隔絕道
22‧‧‧電極絕緣層
23‧‧‧絕緣結構
24‧‧‧電性連接結構
25‧‧‧第二電性焊接墊
26‧‧‧電極連接層
30‧‧‧基板
30a‧‧‧第一表面
40‧‧‧導電配線結構
50,60‧‧‧電性焊接墊
50A‧‧‧第一區域
50B‧‧‧第二區域
70‧‧‧隔絕道
80‧‧‧電極絕緣層
100‧‧‧第一發光二極體
200‧‧‧第二發光二極體
300‧‧‧發光二極體封裝體
1000,2000‧‧‧發光二極體陣列
第1-12圖係本發明第一實施例之發光二極體陣列之結構剖面示意圖。
第13圖係本發明第二實施例之發光二極體陣列上視圖。
第14圖係習知之發光元件結構圖。
11‧‧‧第一導電型接觸層
12‧‧‧第一導電型半導體層
12a‧‧‧粗化平面
13‧‧‧活性層
14‧‧‧第二導電型半導體層
14a‧‧‧粗化平面
15b‧‧‧第二電性電極
15c‧‧‧第二電性延伸電極
17‧‧‧電性連接層
18‧‧‧永久基板
19‧‧‧接合層
20‧‧‧第一隔絕道
21‧‧‧第二隔絕道
22‧‧‧電極絕緣層
23‧‧‧絕緣結構
24‧‧‧電性連接結構
25‧‧‧第二電性焊接墊
26‧‧‧電極連接層
100‧‧‧第一發光二極體
50A‧‧‧第一區域
50B‧‧‧第二區域
200‧‧‧第二發光二極體
1000‧‧‧發光二極體陣列
Claims (15)
- 一發光二極體陣列,包含:一第一發光二極體,包含:一第一區域;一第二區域;一第一隔絕道位於該第一區域與該第二區域之間,且包含一電極絕緣層;及一電極連接層包覆該第一區域;一第二發光二極體,包含:一半導體疊層;及一第二電性焊接墊位於該半導體疊層之上;及一第二隔絕道位於該第一發光二極體與該第二發光二極體之間,且包含一電性連接結構電性連接該第一發光二極體與該第二發光二極體。
- 如申請專利範圍第1項所述之發光二極體陣列,其中更包含一基板形成在該第一區域、該第二區域及該半導體疊層之下。
- 如申請專利範圍第1項所述之發光二極體陣列,其中該第一區域、該第二區域及該半導體疊層更包含:一第一導電型半導體層、一活性層及一第二導電型半導體層。
- 如申請專利範圍第2項所述之發光二極體陣列,其中更包含一接合層位於該基板與該第一區域、該第二區域及該半 導體疊層之間。
- 如申請專利範圍第1項所述之發光二極體陣列,其中該第二隔絕道更包含一絕緣結構。
- 如申請專利範圍第4項所述之發光二極體陣列,其中更包含一電性連接層位於該接合層與該第一區域、該第二區域及該半導體疊層之間。
- 如申請專利範圍第3項所述之發光二極體陣列,其中該電極連接層與該第一導電型半導體層電性連接;該第二電性焊接墊與該第二導電型半導體層電性連接。
- 如申請專利範圍第1項所述之發光二極體陣列,其中該電極連接層及該第二電性焊接墊各包含一上表面,且該二上表面位於相同的水平高度。
- 如申請專利範圍第1項所述之發光二極體陣列,其中該第一區域與該第二區域之距離不小於25μm。
- 如申請專利範圍第1項所述之發光二極體陣列,其中該第二區域及該半導體疊層各包含一上表面,且該上表面為一粗化表面。
- 如申請專利範圍第1項所述之發光二極體陣列,其中該第一發光二極體與該第二發光二極體電性連接可為串聯或並聯。
- 如申請專利範圍第3項所述之發光二極體陣列,其中該第一隔絕道貫穿該第二導電型半導體層及該活性層。
- 如申請專利範圍第3項所述之發光二極體陣列,其中該第二隔絕道貫穿該第二導電型半導體層、該活性層及該第一導電型半導體層。
- 一發光二極體陣列,包含:一基板,具有一第一表面;複數個發光二極體位於該第一表面上;複數個導電配線結構,電性連接該些發光二極體,配置在該第一表面上;二電性焊接墊位於該第一表面上;以及一隔絕道位於該任一電性焊接墊與任一發光二極體之間,其中該電性焊接墊與該發光二極體之距離不小於25μm。
- 如申請專利範圍第14項所述之發光二極體陣列,其中該電性焊接墊與一外接電源電性連接。
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US15/006,374 US9825087B2 (en) | 2012-08-06 | 2016-01-26 | Light-emitting diode |
US15/794,842 US10038030B2 (en) | 2012-08-06 | 2017-10-26 | Light-emitting diode |
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US20180047779A1 (en) | 2018-02-15 |
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US20140034977A1 (en) | 2014-02-06 |
US10418412B2 (en) | 2019-09-17 |
US9825087B2 (en) | 2017-11-21 |
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