US20140138728A1 - Phosphor composition and light emitting device package having the same - Google Patents

Phosphor composition and light emitting device package having the same Download PDF

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Publication number
US20140138728A1
US20140138728A1 US14/081,404 US201314081404A US2014138728A1 US 20140138728 A1 US20140138728 A1 US 20140138728A1 US 201314081404 A US201314081404 A US 201314081404A US 2014138728 A1 US2014138728 A1 US 2014138728A1
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Prior art keywords
phosphor composition
light emitting
emitting device
compositional formula
group
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US14/081,404
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English (en)
Inventor
Ji Wook MOON
Hyun Goo Kang
Ji Hye Kim
Sun Young PARK
Ki Ho Hong
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Priority claimed from KR1020120129971A external-priority patent/KR102035164B1/ko
Priority claimed from KR1020120129972A external-priority patent/KR102035169B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Assigned to LG INNOTEK CO., LTD. reassignment LG INNOTEK CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANG, HYUN GOO, HONG, KI HO, KIM, JI HYE, MOON, JI WOOK, PARK, SUN YOUNG
Publication of US20140138728A1 publication Critical patent/US20140138728A1/en
Priority to US15/390,980 priority Critical patent/US10008641B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/778—Borates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Definitions

  • the embodiment relates to a phosphor composition and a light emitting apparatus including the same.
  • the light emitting apparatus may include a light emitting device package, a lighting unit or a backlight unit.
  • An LED is a device having a property of converting electrical energy into light energy.
  • the LED may represent various colors by adjusting the compositional ratio of compound semiconductors.
  • a nitride semiconductor represents superior thermal stability and wide band gap energy so that the nitride semiconductor has been spotlighted in the field of optical devices and high-power electronic devices.
  • blue, green, and UV light emitting devices employing the nitride semiconductor have already been commercialized and extensively used.
  • An LED of emitting white color light which employs a secondary light source of emitting light by coating phosphor, is generally implemented through a scheme of coating YAG:Ce phosphor of generating yellow color light on a blue LED.
  • the white LED backlight lacks of green and red components, so that colors are unnaturally represented. For this reason, the white LED backlight has been limitedly applied to a display of a portable phone or a laptop computer. Nevertheless, the white LED backlight according to the related art has been extensively used because the white LED backlight is easily driven and inexpensive.
  • the phosphor material may include a silicate, a phosphate, an aluminate, or a sulfide and a transition metal or a rare-earth metal is used at the center of light emission.
  • silicate phosphor has been used for a backlight unit or a lighting device, the silicate phosphor is weak to moisture so the reliability of the silicate phosphor is inferior to any other phosphors.
  • the embodiment provides a phosphor composition having improved reliability and a high luminance, and a light emitting apparatus having the same.
  • the embodiment provides a phosphor composition having high light emission intensity and a light emitting apparatus having the same.
  • the embodiment provides a yellow phosphor having a new composition and a light emitting apparatus having the same.
  • the embodiment provides a phosphor composition having improved reliability and a high luminance, and a light emitting apparatus having the same.
  • the embodiment provides a phosphor composition having high light emission intensity and a light emitting apparatus having the same.
  • a phosphor composition according to the embodiment is expressed as a compositional formula of A z C x O 12 :RE (0 ⁇ z ⁇ 0.5), wherein the A may include at least one selected from the group consisting of Y, Sc, Gd and Lu, the C may include at least one selected from the group consisting of Al and Ga, and the RE may include at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu.
  • a phosphor composition according to the embodiment is expressed as a compositional formula of A 3-z C 5 O 12 :RE z (0 ⁇ z ⁇ 0.5), wherein the A may include at least one selected from the group consisting of Y, Sc, Gd and Lu, the C may include at least one selected from the group consisting of Al and Ga, the RE may include at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu, and the compositional formula of A 3-z C 5 O 12 :RE, may include a compositional formula of (Y, Gd) 3-z (B,Al) 5 O 12 :Ce.
  • a phosphor composition according to the embodiment is expressed as a compositional formula of A 3-z C 5 O 12 :RE z (0 ⁇ z ⁇ 0.5), wherein the A may include at least one selected from the group consisting of Y, Sc, Gd and Lu, the C may include at least one selected from the group consisting of B (Boron), Al and Ga, the RE may include at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu, and the compositional formula of A 3-z C 5 O 12 :RE z may include a compositional formula of (Gd 3-y-z Y y )B 5 O 12 :Ce z (0 ⁇ y ⁇ 2).
  • a light emitting device package includes a body; first and second electrode layers on the body; a light emitting chip electrically connected to the first and second electrode layers; and a molding member including a phosphor composition on a light emitting chip, wherein the phosphor composition includes a compositional formula of A z C x O 12 :RE, the z is 0 ⁇ z ⁇ 3 and the x is 0 ⁇ x ⁇ 5, the A includes at least one selected from the group consisting of Y, Sc, Gd and Lu, the C includes at least one selected from the group consisting of B (Boron), Al and Ga, the RE is at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu, and the phosphor composition emits yellow light.
  • the phosphor composition includes a compositional formula of A z C x O 12 :RE, the z is 0 ⁇ z ⁇ 3 and the x is 0 ⁇ x ⁇ 5, the A includes at least one selected from the group consisting
  • FIG. 1 is a sectional view showing a light emitting device package including a phosphor composition according to the embodiment.
  • FIG. 2 is a graph showing excitation wavelength characteristic data according to the ratio of B to Al in the light emitting device including the phosphor composition of the embodiment.
  • FIG. 3 is a graph showing light emission wavelength characteristic data according to the ratio of B to Al in the light emitting device including the phosphor composition of the embodiment.
  • FIG. 4 is a graph showing excitation wavelength characteristic data according to the ratio of Y to Gd in the light emitting device including the phosphor composition according to the embodiment.
  • FIG. 5 is a graph showing light emission wavelength characteristic data according to the ratio of Y to Gd in the light emitting device including the phosphor composition of the embodiment.
  • FIG. 6 is a graph showing excitation wavelength characteristic data according to the ratio of Ce in the light emitting device including the phosphor composition according to the embodiment.
  • FIG. 7 is a graph showing light emission wavelength characteristic data according to the ratio of Ce in the light emitting device including the phosphor composition of the embodiment.
  • FIG. 8 is an exploded perspective view showing a lighting device having a light emitting device according to the embodiment.
  • each layer shown in the drawings may be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity.
  • the size of elements does not utterly reflect an actual size.
  • FIG. 1 is a sectional view showing a light emitting device package 200 including a phosphor composition according to the first embodiment.
  • the package structure according to the first embodiment is not limited thereto, and is applicable to a two cup package type of a package.
  • the light emitting device package 200 may include a package body 205 , a light emitting device chip 100 on the package body 205 and a molding member 230 including a phosphor composition 232 on the light emitting device chip 100 .
  • the phosphor composition 232 according to the first embodiment is expressed as a compositional formula of A 3-z C 5 O 12 :RE z (0 ⁇ z ⁇ 0.5), wherein the A may include at least one selected from the group consisting of Y, Sc, Gd and Lu, the C may include at least one selected from the group consisting of B (Boron), Al and Ga, and the RE may include at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu.
  • the phosphor composition 232 according to the first embodiment may include a formula of Y 3 (B 5-x Al x )O 12 :Ce (0 ⁇ x ⁇ 5).
  • the phosphor composition 232 according to the second embodiment may include a formula of (Y, Gd) 3-z (B,Al) 5 O 12 :Ce z .
  • the phosphor compositions 232 according to the first and second embodiments may have a light emission wavelength in the range of 559 nm to 567 nm with respect to an excitation wavelength in the range of 420 nm to 500 nm.
  • the light emitting device package 200 may include a package body 205 , first and second electrode layers 213 and 214 mounted on the package body 205 , a light emitting device chip 100 mounted on the package body 205 and electrically connected to the first and second electrode layers 213 and 214 , and a molding member 230 surrounding the light emitting device chip 100 .
  • the package body 205 may include a silicon material, a synthetic resin material or a metallic material.
  • An inclined surface may be formed around the light emitting device chip 100 .
  • the first and second electrode layers 213 and 214 are electrically separated from each other, and perform a function of supplying electric power to the light emitting device chip 100 .
  • the first and second electrode layers 213 and 214 reflect the light generated from the light emitting device chip 100 so that the light efficiency may be increased, and may dissipate the heat generated from the light emitting device 10 to an outside.
  • the light emitting device chip 100 may be applied to a lateral-type light emitting device, but the embodiment is not limited thereto.
  • the light emitting device chip 100 may be applied to a vertical-type light emitting device or a flip-chip-type light emitting device.
  • the light emitting device chip 100 may be formed of a nitride semiconductor.
  • the light emitting device chip 100 may include GaN, GaAs, GaAsP or GaP.
  • the light emitting device chip 100 may include a light emitting structure including a first conductive semiconductor layer (not shown), an active layer (not shown) and a second conductive semiconductor layer (not shown).
  • the first conductive semiconductor layer may include an N type semiconductor layer and the second conductive semiconductor layer may include a P type semiconductor layer, but the embodiment is not limited thereto.
  • a semiconductor layer such as an N type semiconductor layer (not shown) having polarity opposite to that of the second conductive semiconductor layer, may be formed on the second conductive semiconductor layer.
  • the light emitting structure 110 may include one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.
  • the light emitting device chip 100 may be disposed on the package body 205 , or may be disposed on the first or second electrode layer 213 or 214 .
  • the light emitting device chip 100 may be electrically connected to the first and/or second electrode layer 213 and/or 214 through one of a wire scheme, a flip-chip scheme and a die bonding scheme. Although it is described in the embodiment that the light emitting device chip 100 is electrically connected to the first electrode layer 213 through a first wire and to the second electrode layer 214 through a second wire, the embodiment is not limited thereto.
  • the molding member 230 surrounds the light emitting device chip 100 to protect the light emitting device chip 100 .
  • the phosphor composition 232 is included in the molding member 230 so that the wavelength of light emitted from the light emitting device chip 100 may be changed.
  • the phosphor composition 232 has a light emitting region in the yellow region, so that the phosphor composition 232 may be applied for implementing a white LED.
  • the phosphor composition 232 may have an excitation wavelength in the range of 420 nm to 500 nm and a yellow-light emission wavelength in the range of 559 nm to 567 nm by the absorption region.
  • the yellow phosphor composition 232 according to the embodiment is applicable and utilizable for a UV-LED and a blue LED.
  • a conventional scheme of implementing a white LED using a blue LED chip includes a scheme of coating green and red phosphor compositions on a blue LED chip, a yellow phosphor composition and a blue LED chip and a scheme of coating green, red and yellow colors on a blue LED chip, where the phosphor composition of the embodiment signifies a phosphor composition that emits a yellow light and is used to implement a white LED.
  • a white LED may be implemented by applying green, red and blue phosphor compositions to a UV-chip, and the color rendering index may be improved by additionally coating the yellow phosphor composition to the white LED.
  • the white LED is implemented by using the phosphor composition 232 of the embodiment, the white LED is usable in a field of mobile, vehicle, lamp, backlight unit or medicine.
  • a phosphor composition according to the first embodiment is expressed as a compositional formula of A 3-z C 5 O 12 :RE z (0 ⁇ z ⁇ 0.5), where the A may include at least one of selected from the group consisting Y, Sc, Gd and Lu, the C may include at least one selected from the group consisting of B (Boron), Al and Ga, and the RE may include at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu.
  • the phosphor composition 232 of the first embodiment may include the compositional formula of Y 3 (B 5-x Al x )O 12 :Ce (0 ⁇ x ⁇ 5).
  • the phosphor composition 232 according to the embodiment has an advantage of being easily fabricated through a solid-state reaction method by using a stable starting material.
  • a stable starting material For example, after raw materials of Y 2 O 3 , Al 2 O 3 , B 2 O 3 , CeO 2 and NH 4 Cl are weighed according to the composition ratio of Y 3 B 5-x Al x O 12 :Ce, the raw materials are mixed in an agate mortar with solvent. In this case, the raw materials may be mixed into the composition according to the variation of the ratio of B to Al in the range of 0 ⁇ x ⁇ 5.
  • the phosphor composition 232 according to the second embodiment may include the compositional formula of (Y, Gd) 3-z (B,Al) 5 O 12 :Ce z .
  • materials may be mixed according to a variation of the ratio of Ce in the basic composition of (Y, Gd) 3-z (B,Al) 5 O 12 :Ce z .
  • the z may be 0.1 ⁇ z ⁇ 0.3, but the embodiment is not limited thereto.
  • the synthesis atmosphere of the phosphor composition 232 has the condition of a gas flow in the range of 400 cc to 2,000 cc per minute and the synthesis temperature in the range of about 1300° C. to about 1500° C.
  • the reductive gas may include H 2 , N 2 , and NH 3 .
  • the phosphor composition 232 may be synthesized by changing the ratio of H 2 /N 2 mixing gas in the range of 5%/95% to 20%/80%.
  • the phosphor composition 232 according to the embodiment is synthesized under the condition in which the reductive gas has a content of 20% of H 2 and 80% of N 2 , the gas flow is 1,000cc/min for about six hours, and the temperature is about 1,400° C., but the embodiment is not limited thereto.
  • the fired phosphor composition 232 may be dried after performing a ball milling process and a cleaning process using zirconia and a glass ball.
  • the particles of the phosphor composition 232 of the embodiment having the size of about 10 ⁇ m and irregular shapes may be identified based on SEM (Scanning Electron Microscopy) data and the components of the phosphor composition 232 may be identified through EDX (Energy Dispersive X-ray analyzer).
  • the excitation light emission characteristic of the dried phosphor composition 232 may be analyzed through PL (Photoluminescence) analysis.
  • PL Photoluminescence
  • the phosphor composition 232 is a yellow phosphor composition 232 having a light emission wavelength in the range of 559 nm ⁇ 567 nm.
  • FIG. 2 is a graph showing excitation wavelength characteristic data according to the ratio of B to A in the light emitting device including the phosphor composition 232 according to the embodiment.
  • FIG. 3 is a graph showing light emission wavelength characteristic data according to the ratio of B to Al in the light emitting device including the phosphor composition 232 of the embodiment.
  • Table 1 shows characteristic experimental examples of the light emitting device including the phosphor composition 232 of the embodiment according to the ratio of B to Al.
  • the light emitting device when the compositional ratio x of Al in the compositional formula of Y 3 (B 5-x Al x )O 12 :Ce is in the range of 1 ⁇ x ⁇ 4, the light emitting device has high reliability and shows an optimal light emission intensity due to its high luminance as compared with the composition of Y 3 B 5 O 12 :Ce.
  • Table 1 it may be identified the highest light emission intensity is shown in the experimental example 4, but the embodiment is not limited thereto.
  • a phosphor composition 232 according to the third embodiment is expressed as a compositional formula of A 3-z C 5 O 12 :RE z (0 ⁇ z ⁇ 0.5), where the A may include at least one selected from the group consisting of Y, Sc, Gd and Lu, the C may include at least one selected from the group consisting of B (Boron), Al and Ga, and the RE may include at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu.
  • the phosphor composition 232 according to the third embodiment may include a compositional formula of (Gd 3-y-z Y y )B 5 O 12 :Ce z (0 ⁇ y ⁇ 2).
  • the phosphor compositions 232 may have a light emission wavelength in the range of 559 nm to 567 nm with respect to an excitation wavelength in the range of 420 nm to 500 nm.
  • the phosphor composition 232 according to the first embodiment may include a compositional formula of (Gd 3-y-z Y y )B 5 O 12 :Ce z (0 ⁇ z ⁇ 0.5).
  • a phosphor composition 232 may include a compositional formula of (Y, Gd) 3-z (B,Al) 5 O 12 :Ce z .
  • materials may be mixed according to a variation of the ratio of Ce in the basic composition of (Y, Gd) 3-z (B,Al) 5 O 12 :Ce z .
  • the z may be 0.1 ⁇ z ⁇ 0.3, but the embodiment is not limited thereto.
  • the phosphor composition 232 according to the embodiment has an advantage of being easily fabricated through a solid-state reaction method by using a stable starting material.
  • a stable starting material For example, after raw materials of Y 2 O 3 , Gd 2 O 3 , B 2 O 3 , CeO 2 and NH 4 Cl are weighed according to the composition ratio of (Gd 3-y-z Y y )B 5 O 12 :Ce z , the raw materials are mixed in an agate mortar with solvent. In this case, the raw materials may be mixed into the composition according to the variation of the ratio of Y to Gd in the range of 0 ⁇ y ⁇ 2.
  • the synthesis atmosphere of the phosphor composition 232 has the condition of a gas flow in the range of 400 cc to 2,000 cc per minute and the synthesis temperature in the range of about 1300° C. to about 1500° C.
  • the reductive gas may include H 2 , N 2 , and NH 3 .
  • the phosphor composition 232 may be synthesized by changing the ratio of H 2 /N 2 mixing gas in the range of 5%/95% to 20%/80%.
  • the phosphor composition 232 according to the embodiment is synthesized under the condition in which a reductive gas has a content of 20% of H 2 and 80% of N 2 , the gas flow is 1,000 cc/min for about six hours, and the temperature is about 1,400° C., but the embodiment is not limited thereto.
  • the fired phosphor composition 232 may be dried after performing a ball milling process and a cleaning process using zirconia and a glass ball.
  • the particles of the phosphor composition 232 of the embodiment having the size of about 10 ⁇ m and irregular shapes may be identified based on SEM (Scanning Electron Microscopy) data and the components of the phosphor composition 232 may be identified through EDX (Energy Dispersive X-ray analyzer).
  • the excitation light emission characteristic of the dried phosphor composition 232 may be analyzed through PL analysis.
  • the phosphor composition 232 is a yellow phosphor composition 232 having a light emission wavelength in the range of 559 nm 567 nm.
  • FIG. 4 is a graph showing excitation wavelength characteristic data according to the ratio of Y to Gd in the light emitting device including the phosphor composition 232 according to the embodiment.
  • FIG. 5 is a graph showing light emission wavelength characteristic data according to the ratio of Y to Gd in the light emitting device including the phosphor composition 232 of the embodiment.
  • Table 2 shows characteristic experimental examples of the light emitting device including the phosphor composition 232 of the embodiment according to the ratio of Y to Gd.
  • the light emitting device when the compositional ratio y of Y in the compositional formula of (Gd 3-y-z Y y )B 5 O 12 :Ce z is in the range of 0 ⁇ y ⁇ 2, the light emitting device has high reliability and shows an optimal light emission intensity due to its high luminance as compared with the related art.
  • a new yellow phosphor composition of emitting yellow light which has not been proposed in the related art, may be provided by including the composition formula of (Gd 3-y-z Y y )B 5 O 12 :Ce z or Gd) 3-z (B,Al) 5 O 12 :Ce z .
  • FIG. 6 is a graph showing excitation wavelength characteristic data according to the ratio of Ce in the light emitting device including the phosphor composition 232 according to the embodiment.
  • FIG. 7 is a graph showing light emission wavelength characteristic data according to the ratio of Ce in the light emitting device including the phosphor composition 232 of the embodiment.
  • Table 3 shows characteristic experimental examples of the light emitting device including the phosphor composition 232 of the embodiment according to the ratio of Ce.
  • the light emitting device when the compositional ratio z of RE in the compositional formula of A 3-z C 5 O 12 :RE z is in the range of 0.1 ⁇ z ⁇ 0.3, the light emitting device shows a high light emission intensity as compared with the related art. Specifically, as the results shown in Table 2, when the ratio of Ce is 0.2 (Experimental example 10), it has been identified that the maximum light emission intensity is outputted, but the embodiment is not limited to experimental example 10.
  • FIG. 8 is an exploded perspective view showing a lighting device having the light emitting device according to the embodiment.
  • the lighting system may include a cover 2100 , a light source module 2200 , a radiator 2400 , a power supply part 2600 , an inner case 2700 , and a socket 2800 .
  • the lighting device according to the embodiment may further include at least one of a member 2300 and a holder 2500 .
  • the light source module 2200 may include the light emitting device according to the embodiment.
  • the cover 2100 may have a blub shape, a hemisphere shape, a partially-open hollow shape.
  • the cover 2100 may be optically coupled with the light source module 2200 .
  • the cover 2100 may diffuse, scatter, or excite light provided from the light source module.
  • the cover 2100 may be a type of optical member.
  • the cover 2100 may be coupled with the radiator 2400 .
  • the cover 2100 may include a coupling part which is coupled with the radiator 2400 .
  • the cover 2100 may include an inner surface coated with a milk-white paint.
  • the milk-white paint may include a diffusion material to diffuse light.
  • the cover 2100 may have the inner surface of which surface roughness is greater than that of the outer surface thereof. The surface roughness is provided for the purpose of sufficiently scattering and diffusing the light from the light source module 2200 .
  • a material of the cover 2100 may include glass, plastic, polypropylene (PP), polyethylene (PE), and polycarbonate (PC).
  • the polycarbonate (PC) has the superior light resistance, heat resistance and strength among the above materials.
  • the cover 2100 may be transparent so that a user may view the light source module 2200 from the outside, or opaque.
  • the cover 2100 may be formed through a blow molding scheme.
  • the light source module 2200 may be disposed at one surface of the radiator 2400 . Accordingly, the heat from the light source module 2200 is transferred to the radiator 2400 .
  • the light source module 2200 may include a light source 2210 , a connection plate 2230 , and a connector 2250 .
  • the member 2300 is disposed at a top surface of the radiator 2400 , and includes guide grooves 2310 into which a plurality of light sources 2210 and the connector 2250 are inserted.
  • the guide grooves 2310 correspond to a substrate of the light source 2210 and the connector 2250 .
  • a surface of the member 2300 may be coated with a light reflective material.
  • the surface of the member 2300 may be coated with white paint.
  • the member 2300 again reflects light, which is reflected by the inner surface of the cover 2100 and is returned to the direction of the light source module 2200 , to the direction of the cover 2100 . Accordingly, the light efficiency of the lighting device according to the embodiment may be improved.
  • the member 2300 may include an insulating material.
  • the connection plate 2230 of the light source module 2200 may include an electrically conductive material.
  • the radiator 2400 may be electrically connected to the connection plate 2230 .
  • the member 2300 may be configured by an insulating material, thereby preventing the connection plate 2230 from being electrically shorted with the radiator 2400 .
  • the radiator 2400 receives and radiates heats from the light source module 2200 and the power supply part 2600 .
  • the holder 2500 covers a receiving groove 2719 of an insulating part 2710 of an inner case 2700 . Accordingly, the power supply part 2600 received in the insulating part 2710 of the inner case 2700 is closed.
  • the holder 2500 includes a guide protrusion 2510 .
  • the guide protrusion 2510 has a hole through a protrusion of the power supply part 2600 .
  • the power supply part 2600 processes or converts an electric signal received from the outside and provides the processed or converted electric signal to the light source module 2200 .
  • the power supply part 2600 is received in a receiving groove 2719 of the inner case 2700 , and is closed inside the inner case 2700 by the holder 2500 .
  • the power supply part 2600 may include a protrusion 2610 , a guide part 2630 , a base 2650 , and an extension part 2670 .
  • the guide part 2630 has a shape protruding from one side of the base 2650 to the outside.
  • the guide part 2630 may be inserted into the holder 2500 .
  • a plurality of components may be disposed above one surface of the base 2650 .
  • the components may include a DC converter converting AC power provided from an external power supply into DC power, a driving chip controlling driving of the light source module 2200 , and an electrostatic discharge (ESD) protection device protecting the light source module 2200 , but the embodiment is not limited thereto.
  • the extension part 2670 has a shape protruding from an opposite side of the base 2650 to the outside.
  • the extension part 2670 is inserted into an inside of the connection part 2750 of the inner case 2700 , and receives an electric signal from the outside.
  • a width of the extension part 2670 may be smaller than or equal to a width of the connection part 2750 of the inner case 2700 .
  • First terminals of a “+ electric wire” and a “ ⁇ electric wire” are electrically connected to the extension part 2670 and second terminals of the “+ electric wire” and the “ ⁇ electric wire” may be electrically connected to the socket 2800 .
  • the inner case 2700 may include a molding part therein together with the power supply part 2600 .
  • the molding part is prepared by hardening molding liquid, and the power supply part 2600 may be fixed inside the inner case 2700 by the molding part.
  • a phosphor composition having improved reliability and a high luminance, and a light emitting apparatus having the same may be provided.
  • the embodiment may provide a phosphor composition having high light emission intensity and a light emitting apparatus having the same.
  • any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
US14/081,404 2012-11-16 2013-11-15 Phosphor composition and light emitting device package having the same Abandoned US20140138728A1 (en)

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US10361352B1 (en) * 2018-03-22 2019-07-23 Excellence Opto, Inc. High heat dissipation light emitting diode package structure having at least two light cups and lateral light emission
US10479932B2 (en) 2016-04-29 2019-11-19 Lg Innotek Co., Ltd. Phosphor composition, light-emitting device package including same, and lighting device

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JP2014101511A (ja) 2014-06-05
CN103820118A (zh) 2014-05-28
US20170110632A1 (en) 2017-04-20
EP2733190A3 (en) 2014-09-03
EP2733190A2 (en) 2014-05-21
EP2733190B1 (en) 2020-01-01
US10008641B2 (en) 2018-06-26
CN103820118B (zh) 2016-08-17

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