US20130316536A1 - Semiconductor manufacturing device and semiconductor device manufacturing method - Google Patents

Semiconductor manufacturing device and semiconductor device manufacturing method Download PDF

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Publication number
US20130316536A1
US20130316536A1 US13/781,377 US201313781377A US2013316536A1 US 20130316536 A1 US20130316536 A1 US 20130316536A1 US 201313781377 A US201313781377 A US 201313781377A US 2013316536 A1 US2013316536 A1 US 2013316536A1
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Prior art keywords
semiconductor substrate
etching
angle
vertical direction
irradiation
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Satoshi Seto
Hideaki Harakawa
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Definitions

  • the embodiments of the present invention relate to a semiconductor manufacturing apparatus and manufacturing method of a semiconductor device.
  • MRAM magnetic random access memory
  • MTJ Magnetic Tunnel Junction
  • TMR Tunneling Magnetoresistive
  • An MTJ element of a spin-transfer torque writing type has a stacked structure in which a nonmagnetic barrier layer (an insulating thin film) is sandwiched between two ferromagnetic layers (a recording layer and a pinned layer), and stores digital data by the change in a magnetic resistance due to the spin-polarized tunneling effect. Data is written by applying a current in a stacking direction of the MTJ element.
  • a nonmagnetic barrier layer an insulating thin film
  • the two ferromagnetic layers and the nonmagnetic barrier layer are etched at a time.
  • IBE Ion Beam Etching
  • the IBE is physical etching, etched materials sometimes recoil and get re-deposited on a sidewall of the MTJ element.
  • a short pass is disadvantageously formed between the recording layer and the pinned layer.
  • FIG. 1 is a schematic diagram showing a configuration of an etching apparatus according to a first embodiment
  • FIG. 2 is a schematic plan view showing the etching apparatus 100 as seen from above;
  • FIG. 3 is a conceptual diagram showing a positional relation between the first and second ion guns 20 and 30 ;
  • FIGS. 4A and 4B show a relation between an arrangement after forming two adjacent MTJ elements and a critical angle ⁇ crt of ion beams
  • FIG. 5 is a plan view showing a layout of the MTJ elements and the hard masks HM and irradiating directions of the ion beams IB 1 and IB 2 ;
  • FIGS. 6A to 6D are cross-sectional views showing a formation flow of each of the MTJ elements using the etching apparatus 100 according to the first embodiment
  • FIGS. 7A to 7C and 8 A to 8 C are cross-sectional views showing a formation flow of each MTJ element using an etching apparatus according to a comparative example
  • FIGS. 9A and 9B are plan views showing the layout of MTJ elements and hard masks HM and irradiating directions of the ion beams IB 1 and IB 2 according to a second embodiment
  • FIG. 10 is a schematic plan view showing the etching apparatus 100 as seen from above according to a third embodiment
  • FIG. 11 is a conceptual diagram showing a positional relation among the first to third ion guns 20 , 30 , and 95 ;
  • FIG. 12 is a plan view showing irradiating directions of the ion beams IB 1 to IB 3 .
  • a semiconductor manufacturing apparatus comprises a stage capable of mounting a semiconductor substrate thereon, a first irradiation part configured to irradiate an etching beam onto the semiconductor substrate from a first direction inclined at an arbitrary angle with respect to a vertical direction to a surface of the semiconductor substrate, and a second irradiation part configured to irradiate an etching beam onto the semiconductor substrate from a second direction inclined at an arbitrary angle with respect to the vertical direction.
  • the first and second irradiation parts simultaneously irradiate the etching beams when processing the semiconductor substrate or a material on the semiconductor substrate.
  • FIG. 1 is a schematic diagram showing a configuration of an etching apparatus according to a first embodiment.
  • An etching apparatus 100 serving as a semiconductor manufacturing apparatus is, for example, an IBE (Ion Beam Etching) apparatus.
  • the etching apparatus 100 includes a stage 10 on which a semiconductor substrate 1 can be mounted, a first ion gun 20 that irradiates etching beams IB 1 onto the semiconductor substrate 1 , and a second ion gun 30 that irradiates etching beams IB 2 onto the semiconductor substrate 1 .
  • an MRAM Magnetic Random Access Memory
  • the stage 10 is arranged within a chamber 40 .
  • the stage 10 can be inclined with respect to irradiating directions of the etching beams IB 1 and IB 2 irradiated from the first and second ion guns 20 and 30 , respectively in a state of mounting the semiconductor substrate 1 on the stage 10 , and can rotate the semiconductor substrate 1 while being kept inclined.
  • the first and second ion guns 20 and 30 generate ion plasmas from ion sources provided in bell jars 50 and 60 , respectively. Ions are accelerated to predetermined accelerations by grids 70 and 80 to which electric fields are applied, and irradiated toward the semiconductor substrate 1 on the stage 10 as the directional ion beams IB 1 and IB 2 , respectively.
  • the ion beams IB 1 and IB 2 thereby etch the semiconductor substrate 1 or materials deposited on the semiconductor substrate 1 by physical sputtering.
  • inert gas such as Ar, Kr, or Xe
  • gas such as O or N
  • molecular clusters consisting of these substances are used as the ion beams IB 1 and IB 2 .
  • FIG. 2 is a schematic plan view showing the etching apparatus 100 as seen from above.
  • the first and second ion guns 20 and 30 are provided to be movable along the chamber 40 as indicated by arrows A 1 to A 4 .
  • the first and second ion guns 20 and 30 can thereby irradiate the ion beams IB 1 and IB 2 onto the semiconductor substrate 1 on the stage 10 from various directions.
  • FIG. 3 is a conceptual diagram showing a positional relation between the first and second ion guns 20 and 30 .
  • the first ion gun 20 irradiates the etching beam IB 1 onto the semiconductor substrate 1 from a first direction inclined at a first incident angle ⁇ 1 with respect to a vertical direction DV to a surface of the semiconductor substrate 1 .
  • the first incident angle ⁇ 1 can be set arbitrarily depending on an inclination angle of the stage 10 and a position of the first ion gun 20 .
  • the second ion gun 30 irradiates the etching beam IB 2 onto the semiconductor substrate 1 from a second direction inclined at a second incident angle ⁇ 2 with respect to the vertical direction DV to the surface of the semiconductor substrate 1 .
  • the second incident angle ⁇ 2 can be set arbitrarily depending on the inclination angle of the stage 10 and a position of the second ion gun 30 .
  • the first and second incident angles ⁇ 1 and ⁇ 2 indicate opening angles from the vertical direction DV with respect to the vertical direction DV to the surface of the semiconductor substrate 1 . Therefore, the first and second incident angles ⁇ 1 and ⁇ 2 can be set arbitrarily in a range from 0 to 90 degrees.
  • a relative angle formed between the projection in the first direction and that of the second direction is ⁇ , when projecting the direction of the etching beam IB 1 from the first ion gun 20 (a first direction) onto the semiconductor substrate 1 (or the stage 10 ) and the direction of the etching beam IB 2 from the second ion gun 30 (a second direction) onto the semiconductor substrate 1 (or the stage 10 ).
  • the first and second incident angles ⁇ 1 and ⁇ 2 and the relative angle ⁇ can be set arbitrarily.
  • the first incident angle ⁇ 1 can be set depending on the inclination angle of the stage 10 and the direction of the first ion gun 20 .
  • the second incident angle ⁇ 2 can be set depending on the inclination angle of the stage 10 and the direction of the second ion gun 30 .
  • the relative angle ⁇ can be set depending on relative positions of the first ion gun 20 and the second ion gun 30 .
  • the first direction and the second direction do not perfectly mach each other. Accordingly, the first incident angle ⁇ 1 differs from the second incident angle ⁇ 2 ( ⁇ 1 ⁇ 2 ) or the relative angle ⁇ is not zero ( ⁇ 0).
  • first and second ion guns 20 and 30 can set accelerating voltages and quantities of the etching beams IB 1 and IB 2 individually.
  • FIGS. 4A and 4B show a relation between an arrangement after forming two adjacent MTJ elements and a critical angle ⁇ crt of ion beams.
  • an etched material does not volatize but scatters in the air and re-deposits on a hard mask and a sidewall of each of the MTJ elements when the MTJ element is processed, because the IBE is the physical etching.
  • re-deposition material is a ferromagnetic material of the MTJ element and has an electric conductivity. Accordingly, the re-deposition material causes a short pass between a recording layer and a pinned layer of the MTJ element. It is possibly proposed to increase the incident angle of the ion beams so as to remove the re-deposition material.
  • etching components to a side surface of each MTJ element become larger in quantity than those to a top surface of materials of the MTJ element. This makes it possible to remove the re-deposition material (a re-deposition substance) adhering to the side surface of the MTJ element while etching the top surface of the materials of the MTJ element.
  • side etching makes the MTJ element thinner.
  • the etching components to the side surface of each MTJ element become smaller in quantity than those to the top surface of the materials of the MTJ element. Therefore, the re-deposition material adhering to the side surface of the MTJ element remains.
  • the critical angle ⁇ crt is about 45 degrees and the incident angle of the ion beams is smaller than the critical angle ⁇ crt (e.g. about 45 degrees)
  • the re-deposition material remains on the side surface of each MTJ element.
  • the incident angle of the ion beams is greater than the critical angle ⁇ crt (e.g. about 45 degrees)
  • the re-deposition material is removed from the side surface of the MTJ element, but the MTJ element becomes smaller because of an increase in side etching components. That is, the critical angle ⁇ crt is an incident angle of the ion beams when the speed of deposition of the re-deposition material is substantially equal to that of removal of the re-deposition material.
  • the incident angle of the ion beams is substantially equal to the critical angle ⁇ crt, it is possible to minimize the side etching to the side surface of the MTJ element while suppressing the re-deposition material from adhering to the sidewall of the MTJ element.
  • the value of 45 degrees of the critical angle ⁇ crt is taken as an example, and the value of the critical angle ⁇ crt is practically variable depending on various circumstances.
  • the distance between the adjacent MTJ elements is reduced as described above. If the distance between the MTJ elements is reduced, one of the two adjacent MTJ elements is hidden behind the other MTJ element when the etching beams are greatly inclined so as to remove the re-deposition material from the side surface of each MTJ element. In this case, defective etching occurs and it is impossible to process each MTJ element into a desired pattern. Moreover, if the inclination of the etching beams is set smaller than the critical angle ⁇ crt to prevent the adjacent MTJ elements from influencing each other, the re-deposition material remains on the side surface of each MTJ element.
  • Two MTJ elements (an MTJ 1 and an MTJ 2 ) adjacent to each other are provided on an underlying material 85 .
  • Hard masks HM are provided on the MTJ 1 and MTJ 2 , respectively.
  • the MTJ 1 and the hard mask HM on the MTJ 1 form a first structure 51
  • the MTJ 2 and the hard mask HM on the MTJ 2 form a second structure 52 .
  • a plurality of structures 51 and 52 are formed on the semiconductor substrate 1 by the IBE into an array.
  • a reference angle ⁇ ref is an inclination angle of a tangent from a lower end B 1 of the first structure 51 to an upper end T 2 of the second structure 52 adjacent to the first structure 51 .
  • the reference angle ⁇ ref is a maximum angle among angles at which ion beams toward the adjacent structures 51 and 52 can be irradiated onto the entire side surfaces of the respective structures 51 and 52 .
  • the ion beams can be irradiated onto the entire side surface of each structure without being intercepted by the other structure. It is thereby possible to irradiate the ion beams onto the underlying material 85 between the structures 51 and 52 until completion of processing of the structure 51 without the influence of the adjacent structure 52 .
  • the reference angle ⁇ ref is equal to or greater than the critical angle ⁇ crt.
  • the irradiation angle of the ion beams can be set to be equal to or greater than the critical angle ⁇ crt and equal to or smaller than the reference angle ⁇ ref.
  • the ion beams can be irradiated onto the entire side surface of the structure 51 without being intercepted by the adjacent structure 52 .
  • the ion beams can remove the re-deposition material on the side surface of the structure 51 while processing the structure 51 . In this case, it suffices to prepare one ion gun for the etching apparatus.
  • the re-deposition material is the materials of the MTJ elements themselves or the underlying material 85 under the MTJ elements.
  • the reference angle ⁇ ref is smaller than the critical angle ⁇ crt (45 degrees, for example).
  • the irradiation angle of the ion beams is set to be equal to or greater than the critical angle ⁇ crt, the ion beams are intercepted by the adjacent structure 52 . As a result, it is impossible to preferably process the MTJ element.
  • the irradiation angle of the ion beams is set to be equal to or smaller than the reference angle ⁇ ref so that the ion beams are not intercepted by the adjacent structure 52 , the irradiation angle of the ion beams is smaller than the critical angle ⁇ crt and the side etching components of the ion beams decrease. Accordingly, the re-deposition material adhering to the side surface of the structure 51 partially remains without being completely removed. Therefore, if the materials of the MTJ element are to be processed by using only one ion gun (the first ion gun 20 , for example), the MTJ element can not be processed into a desired shape or the re-deposition material remains on the side surface of the MTJ element.
  • the etching apparatus 100 includes a plurality of ion guns 20 and 30 and processes the MTJ elements by using these ion guns 20 and 30 .
  • a first irradiation angle ⁇ 1 of the first ion gun 20 is set to be equal to or smaller than the reference angle ⁇ ref (about 45 degrees, for example), and a second irradiation angle ⁇ 2 of the second ion gun 30 is set to be equal to or greater than the critical angle ⁇ crt (about 45 degrees, for example).
  • the ion beams IB 1 from the first ion gun 20 can process materials 90 of each of the MTJ elements into a desired pattern.
  • the ion beams IB 2 from the second ion gun 30 can remove the re-deposition material on the side surface of the MTJ element.
  • the MTJ element can be processed into a high density pattern while removing the re-deposition material on the side surface of the MTJ element.
  • FIG. 5 is a plan view showing a layout of the MTJ elements and the hard masks HM and irradiating directions of the ion beams IB 1 and IB 2 .
  • the structures 51 and 52 including the MTJ elements and the hard masks HM are arranged two-dimensionally on the underlying material 85 into a matrix.
  • the relative angle ⁇ formed between the ion beams IB 1 and IB 2 is set to an angle at which the ion beams IB 2 can effectively remove the re-deposition material adhering to the side surface of each MTJ element.
  • the relative angle ⁇ is greater than 0 degree and equal to or smaller than 180 degrees. In FIG. 5 , the relative angle ⁇ is set to about 45 degrees, for example.
  • the ion beams IB 1 irradiated on a front surface of the structure 51 are not largely irradiated onto the underlying material 85 as shown in FIG. 5 . Nevertheless, the ion beams IB 1 are irradiated onto the underlying material 85 in portions adjacent to the front surface of the structure 51 . As indicated by dashed circles in FIG. 5 , therefore, the re-deposition material in large quantities adheres to side surface portions adjacent to the front surface of the structure 51 .
  • the ion beams IB 2 are irradiated onto the side surface portions adjacent to the front surface of the structure 51 and can remove the re-deposition material adhering to the side surface portions.
  • FIGS. 6A to 6D are cross-sectional views showing a formation flow of each of the MTJ elements using the etching apparatus 100 according to the first embodiment.
  • the underlying material 85 and the materials 90 of the MTJ element are deposited above the semiconductor substrate 1 , and the hard mask HM is deposited on the materials 90 of the MTJ element.
  • the hard mask HM is processed into a layout pattern of the MTJ element by lithography and either RIE (Reactive Ion etching) or the IBE.
  • the etching apparatus 100 etches the materials 90 of the MTJ element by the IBE with the hard mask HM used as a mask. After the etching, processing on the MTJ element is completed as shown in FIG. 6D .
  • the first ion gun 20 irradiates the ion beams IB 1 from a first direction D 1 toward the semiconductor substrate 1 and, at the same time, the second ion gun 30 irradiates the ion beams IB 2 from a second direction D 2 toward the semiconductor substrate 1 .
  • the irradiation angle ⁇ 1 at which the first ion gun 20 irradiates the ion beams IB 1 is set to be equal to or smaller than the reference angle ⁇ ref, and the irradiation angle ⁇ 2 at which the second ion gun 30 irradiates the ion beams IB 2 is set to be equal to or greater than the critical angle ⁇ crt as described above.
  • the first ion gun 20 processes the materials 90 of the MTJ element by irradiating the ion beams IB 1 from the first direction D 1 .
  • the second ion gun 30 etches away the deposited material adhering to the side surface of the MTJ element by irradiating the ion beams IB 2 from the second direction D 2 .
  • the etching apparatus 100 can process the MTJ elements into the high-density layout patterns while removing the re-deposition material on the side surfaces of each of the MTJ elements by simultaneously using the first and second ion guns 20 and 30 even if the distance between the adjacent MTJ elements is short (or the aspect ratio of the MTJ elements is high).
  • FIGS. 7A to 7C and 8 A to 8 C are cross-sectional views showing a formation flow of each MTJ element using an etching apparatus according to a comparative example.
  • the first ion gun 20 and the second ion gun 30 etch the materials 90 of the MTJ element at a different timing.
  • the second ion gun 30 processes the materials 90 of the MTJ element by irradiating the ion beams IB 2 from the second direction D 2 .
  • FIGS. 7A to 7C and 8 A to 8 C are cross-sectional views showing a formation flow of each MTJ element using an etching apparatus according to a comparative example.
  • the first ion gun 20 and the second ion gun 30 etch the materials 90 of the MTJ element at a different timing.
  • the second ion gun 30 processes the materials 90 of the MTJ element by irradiating the ion beams IB 2 from the second direction D 2 .
  • the first ion gun 20 processes the materials 90 of the MTJ element by irradiating the ion beams IB 1 from the first direction D 1 .
  • the materials 90 of the MTJ element are etched while a re-deposition material RD adheres to the hard mask HM or the side surface of the MTJ element.
  • the re-deposition material RD serves as a mask, and the layout pattern of the hard mask HM or the materials 90 of the MTJ element is made larger by as much as the re-deposition material RD. Therefore, as shown in FIG. 7B , the material 90 of the MTJ element is formed into a forward tapered shape so as to widen toward the underlying material 85 .
  • the second ion gun 30 irradiates the ion beams IB 2 onto the re-deposition material RD from the second direction D 2 .
  • the MTJ element remains in a forward tapered shape as shown in FIG. 7C .
  • a bottom of the MTJ element is made larger, which makes it impossible to form the MTJ elements into a desired layout pattern. This also hampers the downscaling of the MTJ elements.
  • the second ion gun 30 processes the materials 90 of the MTJ element by irradiating the ion beams IB 2 from the second direction D 2 , the re-deposition material RD does not adhere to the side surface of the MTJ element.
  • the side etching components of the ion beams IB 2 are large in quantity, side surfaces of the hard mask HM and the materials 90 of the MTJ element are largely chipped off laterally as shown in FIG. 8B .
  • the first ion gun 20 irradiates the ion beams IB 1 onto the materials 90 of the MTJ element or the underlying material 85 from the first direction D 1 .
  • the re-deposition material RD adheres to the side surfaces of the hard mask HM and the materials 90 of the MTJ element. This re-deposition material RD is left without being removed, which possibly causes short-circuit of the MTJ element.
  • the first and second ion guns 20 and 30 irradiate the ion beams IB 1 and IB 2 at a different timing, it is difficult to form the MTJ element into a desired pattern or the re-deposition material RD remains.
  • the first and second ion guns 20 and 30 simultaneously irradiate the ion beams IB 1 and IB 2 , the first irradiation angle ⁇ 1 at which the first ion gun 20 irradiates the ion beams IB 1 is set to be equal to or smaller than the reference angle ⁇ ref, the second irradiation angle ⁇ 2 at which the second ion gun 30 irradiates the ion beams IB 2 is set to be equal to or greater than the critical angle ⁇ crt, as explained above with reference to FIGS. 5 and 6A to 6 D.
  • This can relieve the forward tapered shape of the side surface of the MTJ element (make the side surface of the MTJ element sharp) while suppressing deposition of the re-deposition material on the side surface of the MTJ element. That is, it is possible to form the MTJ element into a desired layout pattern and to suppress the formation of the short pass on the side surface of the MTJ element.
  • the relative angle ⁇ formed between the ion beams IB 1 and IB 2 is set to about 45 degrees in the first embodiment, the relative angle ⁇ can be set arbitrarily so as to be able to efficiently remove the re-deposition material.
  • FIGS. 9A and 9B are plan views showing the layout of MTJ elements and hard masks HM and irradiating directions of the ion beams IB 1 and IB 2 according to a second embodiment.
  • the relative angle ⁇ is set to about 90 degrees.
  • the first irradiation angle ⁇ 1 at which the first ion gun 20 irradiates the ion beams IB 1 can be set to be equal to or smaller than the reference angle ⁇ ref similarly to the first embodiment.
  • the second irradiation angle ⁇ 2 at which the second gun 30 irradiates the ion beams IB 2 can be set to be equal to or greater than the critical angle ⁇ crt similarly to the first embodiment.
  • the ion beams IB 1 and IB 2 are irradiated in a direction from the structure 52 to the structure 51 , the ion beams IB 1 are not largely irradiated onto the underlying material 85 in a front surface portion of the structure 51 .
  • the ion beams IB 1 are irradiated onto the underlying material 85 in a portion adjacent to the front surface of the structure 51 (a portion indicated by a dashed circle shown in FIG. 9A ). Therefore, the re-deposition material adheres to the side surface portion adjacent to the front surface of the structure 51 in relatively large quantities.
  • the ion beams IB 2 are partially intercepted by the structure 52 adjacent to the structure 51 .
  • the ion beams IB 2 are irradiated onto the side surface portions adjacent to the front surface of the structure 51 and can remove the re-deposition material.
  • both the ion beams IB 1 and IB 2 are sufficiently irradiated onto the structure 51 . Therefore, although the ion beams IB 1 cause the re-deposition material to adhere to the side surface of the structure 51 , the ion beams IB 2 can remove the re-deposition material. In this way, even if the relative angle ⁇ between the ion beams IB 1 and IB 2 is about 90 degrees, the second embodiment can achieve effects identical to those of the first embodiment.
  • FIG. 10 is a schematic plan view showing the etching apparatus 100 as seen from above according to a third embodiment.
  • the first and second ion guns 20 and 30 are configured as described with reference to FIG. 2 .
  • a third ion gun 95 is provided to be movable along the chamber 40 as indicated by arrows A 5 and A 6 .
  • the third ion gun 95 can thereby irradiate ion beams IB 3 onto the semiconductor substrate 1 on the stage 10 from various directions.
  • the third ion gun 95 can be configured similarly to the first and second ion guns 20 and 30 .
  • FIG. 11 is a conceptual diagram showing a positional relation among the first to third ion guns 20 , 30 , and 95 .
  • the positional relation between the first ion gun 20 and the second ion gun 30 is already described above with reference to FIG. 3 .
  • the third ion gun 95 irradiates the etching beams IB 3 onto the semiconductor substrate 1 from a third direction inclined at a third incident angle ⁇ 3 with respect to the vertical direction DV to the surface of the semiconductor substrate 1 .
  • the third incident angle ⁇ 3 can be set arbitrarily depending on the inclination angle of the stage 10 and a position of the third ion gun 95 .
  • the third incident angle ⁇ 3 at which the third ion gun 95 irradiates the ion beams IB 3 differs from the first incident angle ⁇ 1 at which the first ion gun 20 irradiates the ion beams IB 1 . Furthermore, it is assumed here that a relative angle formed between the projection of the first direction and that of the third direction is ⁇ when projecting the direction of the etching beam IB 1 from the first ion gun 20 (the first direction) onto the semiconductor substrate 1 (or the stage 10 ) and the direction of the etching beam IB 3 from the third ion gun 95 (a third direction) onto the semiconductor substrate 1 (or the stage 10 ).
  • the third incident angle ⁇ 3 and the relative angle ⁇ can be set arbitrarily.
  • the third incident angle ⁇ 3 can be set depending on the inclination angle of the stage 10 and the direction of the third ion gun 95 .
  • the relative angle ⁇ can be set depending on relative positions of the first ion gun 20 and the third ion gun 95 .
  • the first to third ion guns 20 , 30 , and 95 can set accelerating voltages and quantities of the etching beams IB 1 , IB 2 , and IB 3 individually.
  • the first irradiation angle ⁇ 1 of the first ion gun 20 is set to be equal to or smaller than the reference angle ⁇ ref (about 45 degrees, for example), and the irradiation angles ⁇ 2 and ⁇ 3 of the second and third ion guns 30 and 95 are set to be equal to or greater than the critical angle ⁇ crt (about 45 degrees, for example).
  • the second and third irradiation angles ⁇ 2 and ⁇ 3 can be set either equally or differently.
  • the ion beams IB 2 and IB 3 from the second and third ion guns 30 and 95 can remove the re-deposition material on the side surface of the MTJ element.
  • the MTJ element can be processed into a high density pattern while removing the re-deposition material on the side surface of the MTJ element.
  • FIG. 12 is a plan view showing irradiating directions of the ion beams IB 1 to IB 3 .
  • the structure 51 including one MTJ element and one hard mask HM is arranged on the underlying material 85 .
  • the relative angles ⁇ and ⁇ are set to angles at which the ion beams IB 2 and IB 3 can effectively remove the re-deposition material adhering to the side surface of the MTJ element.
  • the relative angles ⁇ and ⁇ are greater than 0 degree and equal to or smaller than 180 degrees. In FIG. 12 , the relative angles ⁇ and ⁇ are respectively set to about ⁇ 135 degrees, for example.
  • the re-deposition material does not adhere to the front surface of the structure 51 .
  • the re-deposition material adheres to the side surface portions adjacent to the front surface of the structure 51 (portions indicated by dashed circles in FIG. 12 ). That is, even when the distance between the adjacent structures is sufficiently long as shown in FIG. 4A or only one structure 51 is formed as shown in FIG. 12 , the re-deposition material possibly adheres to the side surface of the structure 51 if using only the ion beams IB 1 .
  • the etching apparatus 100 irradiates the ion beams IB 2 and IB 3 onto the side surface portions on both sides of the structure 51 .
  • the ion beams IB 2 and IB 3 are irradiated from directions opposite to each other across the ion beams IB 1 . That is, the relative angle ⁇ is set to +135 degrees with respect to the first direction whereas the relative angle ⁇ is set to ⁇ 135 degrees with respect to the first direction. It is thereby possible to remove the re-deposition material adhering to the side surface portions on the both sides of the structure 51 .
  • the etching apparatus 100 according to the third embodiment can be used at a time of forming a plurality of MTJ elements arranged two-dimensionally into a matrix as shown in FIG. 5 or FIGS. 9A and 9B .
  • the relative angles ⁇ and ⁇ can be set to about ⁇ 45 degrees, about ⁇ 90 degrees, or about ⁇ 120 degrees.
  • the ion beams IB 2 and IB 3 from the second and third ion guns 30 and 95 can remove the re-deposition material adhering to the side surface portions by the ion beams IB 1 from the first ion gun 20 . Because the second and third ion beams IB 2 and IB 3 are irradiated onto the side surface portions on the both sides of the structure 51 , it is possible to remove the re-deposition material more efficiently. Furthermore, the use of the etching apparatus 100 according to the third embodiment can dispense with a complicated manufacturing process for removing the re-deposition material adhering to the side surface portions on the both sides of the structure 51 .
  • the first to third ion guns 20 , 30 , and 95 can set the accelerating voltages and the quantities of the ion beams IB 1 to IB 3 to fixed voltages and fixed quantities.
  • the first to third ion guns 20 , 30 , and 95 can change the accelerating voltages or the quantities of the ion beams IB 1 to IB 3 according to the rotation of the semiconductor substrate 1 .
  • the accelerating voltages or the quantities of the ion beams IB 1 and IB 2 are set relatively high or large.
  • the accelerating voltages and/or the quantities of the ion beams IB 1 and IB 2 are set relatively low or small. In this way, by changing the accelerating voltages or the quantities of the ion beams IB 1 and IB 2 according to the rotation of the semiconductor substrate 1 , the etching apparatus 100 can keep equilibrium between the adhesion of the re-deposition material and the removal of the re-deposition material more easily.
  • Each of the etching apparatus 100 is for use in the processing of the MTJ elements included in the MRAM. Alternatively, each of these etching apparatus 100 can be used to process other memory elements. Moreover, each of the etching apparatus 100 can be used at a time of forming structures on the semiconductor substrate 1 by processing the semiconductor substrate 1 itself.

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US20160087195A1 (en) * 2014-09-18 2016-03-24 Yasuyuki Sonoda Etching apparatus and etching method
US20160218280A1 (en) * 2015-01-23 2016-07-28 Jongchul PARK Patterning Methods, Methods of Fabricating Semiconductor Devices Using the Same, and Semiconductor Devices Fabricated Thereby
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US9773973B2 (en) 2012-11-26 2017-09-26 Canon Anelva Corporation Process for producing magnetoresistive effect element and device producing method
US9070869B2 (en) * 2013-10-10 2015-06-30 Avalanche Technology, Inc. Fabrication method for high-density MRAM using thin hard mask
US8975089B1 (en) * 2013-11-18 2015-03-10 Avalanche Technology, Inc. Method for forming MTJ memory element
US20170047329A1 (en) * 2013-12-12 2017-02-16 Texas Instruments Incorporated Method to form silicide and contact at embedded epitaxial facet
US10008499B2 (en) 2013-12-12 2018-06-26 Texas Instruments Incorporated Method to form silicide and contact at embedded epitaxial facet
US9812452B2 (en) * 2013-12-12 2017-11-07 Texas Instruments Incorporated Method to form silicide and contact at embedded epitaxial facet
US9595663B2 (en) 2014-03-12 2017-03-14 Kabushiki Kaisha Toshiba Magnetic memory having magnetoresistive element and method of manufacturing magnetoresistive element
US9577183B2 (en) * 2014-04-03 2017-02-21 Samsung Electronics Co., Ltd. Methods of manufacturing a magnetoresistive random access memory device
KR102132215B1 (ko) * 2014-04-03 2020-07-09 삼성전자주식회사 자기 터널 접합 구조물 형성 방법 및 이를 이용한 자기 메모리 소자의 제조 방법
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US20150287911A1 (en) * 2014-04-03 2015-10-08 Kyoung-Sun Kim Methods of manufacturing a magnetoresistive random access memory device
US10003014B2 (en) * 2014-06-20 2018-06-19 International Business Machines Corporation Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
US20180240967A1 (en) * 2014-06-20 2018-08-23 International Business Machines Corporation Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
US20150372225A1 (en) * 2014-06-20 2015-12-24 International Business Machines Corporation Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
US20160087195A1 (en) * 2014-09-18 2016-03-24 Yasuyuki Sonoda Etching apparatus and etching method
US10003017B2 (en) * 2014-09-18 2018-06-19 Toshiba Memory Corporation Etching apparatus and etching method
CN106716662A (zh) * 2014-10-15 2017-05-24 东京毅力科创株式会社 对多层膜进行蚀刻的方法
US9859492B2 (en) 2015-01-23 2018-01-02 Samsung Electronics Co., Ltd. Magnetic memory devices having sloped electrodes
US9685606B2 (en) * 2015-01-23 2017-06-20 Samsung Electronics Co., Ltd. Patterning methods, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated thereby
US20160218280A1 (en) * 2015-01-23 2016-07-28 Jongchul PARK Patterning Methods, Methods of Fabricating Semiconductor Devices Using the Same, and Semiconductor Devices Fabricated Thereby
US9991442B2 (en) 2016-03-10 2018-06-05 Samsung Electronics Co., Ltd. Method for manufacturing magnetic memory device
CN109103101A (zh) * 2017-06-21 2018-12-28 清华大学 纳米微结构的制备方法
CN109103075A (zh) * 2017-06-21 2018-12-28 清华大学 纳米级沟道的制备方法
US10693059B2 (en) 2018-02-20 2020-06-23 International Business Machines Corporation MTJ stack etch using IBE to achieve vertical profile
US10790442B2 (en) 2018-03-09 2020-09-29 Toshiba Memory Corporation Magnetic memory device
US12020892B2 (en) 2019-09-17 2024-06-25 Kioxia Corporation Etching apparatus and etching method
US11387071B2 (en) * 2019-10-06 2022-07-12 Applied Materials, Inc. Multi-source ion beam etch system
TWI766500B (zh) * 2020-01-29 2022-06-01 日商日立全球先端科技股份有限公司 離子研磨裝置
US20230352263A1 (en) * 2020-01-29 2023-11-02 Hitachi High-Tech Corporation Ion milling device
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