US20130206222A1 - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
US20130206222A1
US20130206222A1 US13/614,445 US201213614445A US2013206222A1 US 20130206222 A1 US20130206222 A1 US 20130206222A1 US 201213614445 A US201213614445 A US 201213614445A US 2013206222 A1 US2013206222 A1 US 2013206222A1
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region
solar cell
electrodes
substrate
back surface
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US13/614,445
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Jungmin Ha
Youngho Choe
Changseo Park
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LG Electronics Inc
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LG Electronics Inc
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Assigned to LG ELECTRONICS INC. reassignment LG ELECTRONICS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOE, YOUNGHO, PARK, CHANGSEO, HA, JUNGMIN
Publication of US20130206222A1 publication Critical patent/US20130206222A1/en
Priority to US16/388,491 priority Critical patent/US11056598B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • Embodiments of the invention relate to a solar cell.
  • Solar power generation to convert light energy into electric energy using a photoelectric conversion effect has been widely used as a method for obtaining eco-friendly energy.
  • a solar power generation system using a plurality of solar cell modules has been installed in places, such as houses, due to an improvement of a photoelectric conversion efficiency of solar cells.
  • a solar cell generally includes a substrate and an emitter region forming a p-n junction along with the substrate.
  • the solar cell generates an electric current using light incident through one surface of the substrate.
  • An anti-reflection layer is formed on a light receiving surface of the substrate, so as to reduce a reflectance of light incident on the substrate and increase a transmittance of light of a predetermined wavelength band. Hence, the anti-reflection layer increases a photoelectric conversion efficiency of the solar cell.
  • a solar cell including a substrate of a first conductive type, a plurality of first electrodes which are positioned on one surface of the substrate and extending in a first direction, an emitter region which is electrically connected to the plurality of first electrodes and is of a second conductive type opposite the first conductive type, a plurality of second electrodes which are positioned on another surface of the substrate and extending in the first direction, and a back surface field region including a plurality of first field regions which are locally formed at locations corresponding to the plurality of second electrodes in the same direction as the plurality of second electrodes and are electrically connected to the plurality of second electrodes, wherein a distance between adjacent first field regions in a second direction perpendicular to the first direction is less than a distance between adjacent second electrodes in the second direction.
  • the distance between the adjacent second electrodes may be less than the distance between the adjacent first electrodes within a range of about 1.0 mm to 2.5 mm.
  • a surface concentration of the back surface field region may be about 1E19/cm 2 to 5E20/cm 2 .
  • a junction depth of the back surface field region may be about 0.3 ⁇ m to 1.8 ⁇ m.
  • One first field region may include a first region which directly contacts one second electrode and overlaps the one second electrode, and a second region which is positioned around the first region in the second direction and does not overlap the one second electrode.
  • a line width of the one first field region may be about two times to 4.5 times a line width of the one second electrode.
  • the line width of the one second electrode may be about 50 ⁇ m to 150 ⁇ m, and the line width of the one first field region may be about 100 ⁇ m to 600 ⁇ m.
  • the one second region may be positioned on one side or both sides of the one first region in the second direction.
  • Line widths of the plurality of second regions respectively positioned on both sides of the one first region may be equal to or different from each other.
  • the solar cell may further include at least one second current collector which is electrically connected to the plurality of second electrodes and extending in the second direction.
  • a portion of the one first field region may overlap a portion of the at least one second current collector.
  • the back surface field region may further include a second field region including a third region which directly contacts the second current collector and overlaps the second current collector, and a fourth region which is positioned around the third region and does not overlap the second current collector.
  • a line width of the second field region may be greater than a line width of the second current collector, and be equal to or less than about 1.5 times the line width of the second current collector.
  • a line width of the second field region may be about 1.6 mm to 2.0 mm.
  • the fourth region may be positioned on one side or both sides of the third region in the first direction. Line widths of the fourth regions respectively positioned on both sides of the third region may be equal to or different from each other.
  • the solar cell may further include a first passivation layer positioned on a front surface of the emitter region, on which the plurality of first electrodes are not positioned, and a second passivation layer positioned on a back surface of the substrate, on which the plurality of second electrodes are not positioned.
  • the first passivation layer and the second passivation layer may be formed of a material having fixed charges of the first conductive type.
  • the first passivation layer and the second passivation layer may each contain aluminum oxide (AlO x ) or yttrium oxide (Y 2 O 3 ) having negative fixed charges.
  • the first passivation layer and the second passivation layer may each have a refractive index of about 1.55 to 1.7 and a thickness of about 5 nm to 30 nm.
  • the solar cell may further include a first anti-reflection layer positioned on the first passivation layer and a second anti-reflection layer positioned on a back surface of the second passivation layer.
  • the first anti-reflection layer and the second anti-reflection layer may be formed of silicon nitride (SiN x ) having positive fixed charges.
  • the first anti-reflection layer and the second anti-reflection layer may each have a refractive index of about 1.9 to 2.3 and a thickness of about 50 nm to 100 nm.
  • the substrate may be formed of an n-type silicon wafer doped with phosphorus (P).
  • the emitter region may include a first doped region which is lightly doped with impurities of the second conductive type, and a second doped region which is more heavily doped than the first doped region with impurities of the second conductive type.
  • the passivation layer reduces a recombination rate of carriers.
  • the performance of the passivation layer is improved as an impurity doping concentration at and around the surface of the substrate is reduced.
  • the back surface field region is formed only at the back surface of the substrate, on which the second electrodes and the second current collector are formed, a performance of the passivation layer is improved.
  • the recombination rate of carriers is efficiently reduced, and a current density and an open voltage of the solar cell increase. As a result, the efficiency of the solar cell is improved.
  • the back surface field region has the same stripe shape as the second electrode formed on the back surface of the substrate or a grid shape corresponding to the second electrodes and the second current collector and is locally formed at the back surface of the substrate. Therefore, a transfer efficiency of carriers through the back surface field region is improved, and a separate edge isolation process is not necessary because impurities are not doped at an edge of the substrate.
  • the distance between the second electrodes is less than the distance between the first electrodes, an increase in a serial resistance resulting from an increase in a sheet resistance of the back surface of the substrate may be prevented or reduced.
  • the line width of the first field region is greater than the line width of the second electrode, the distance between the first field regions is less than the distance between the second electrodes. Hence, a process margin may be easily secured when the back surface field region is formed.
  • Aluminum oxide (AlO x ) or yttrium oxide (Y 2 O 3 ) for forming the first and second passivation layers has excellent chemical passivation characteristic resulting from a low interface trap density and excellent field effect passivation characteristic resulting from the negative fixed charges. Further, the material is very excellent in stability, moisture transmission, and abrasion resistance.
  • the first and second passivation layers may reduce the recombination rate of carriers at the surface of the substrate, thereby improving the efficiency and the reliability of the solar cell.
  • the back surface field region is locally positioned only at the same location as the second electrodes, an influence of the second passivation layer formed of aluminum oxide (AlO x ) or yttrium oxide (Y 2 O 3 ) on carriers moving to the back surface field region may be minimized.
  • AlO x aluminum oxide
  • Y 2 O 3 yttrium oxide
  • the second doped region of the emitter region is formed only at the same location as the first electrodes, and the first doped region having an impurity concentration lower than the second doped region is formed in a remaining region of the emitter region. Therefore, the emitter region including both the heavily doped region and the lightly doped region may further reduce the recombination rate of carriers than an emitter region including only a heavily doped region. Hence, a low serial resistance of the solar cell may be secured.
  • Both a front surface of the substrate, on which the first electrodes are positioned, and the back surface of the substrate, on which the second electrodes are positioned, are the textured surfaces, the first passivation layer and the first anti-reflection layer are formed on the front surface of the substrate, and the second passivation layer and the second anti-reflection layer are formed on the back surface of the substrate. Therefore, light, which is incident on the front surface of the substrate and then passes through the substrate, is again incident on the back surface of the substrate. As a result, the light may be used to generate electric current.
  • the efficiency of the solar cell according to the embodiment of the invention may further increase than a solar cell generating electric current using only light incident on the front surface of the substrate.
  • FIG. 1 is a schematic perspective view of a solar cell according to a first embodiment of the invention
  • FIG. 2 is a plane view showing a back surface of the solar cell shown in FIG. 1 ;
  • FIG. 3 is a schematic perspective view of a solar cell according to a second embodiment of the invention.
  • FIG. 4 is a plane view showing a back surface of the solar cell shown in FIG. 3 .
  • an element when referred to as being “directly on” another element, there are no intervening elements present. Further, it will be understood that when an element such as a layer, film, region, or substrate is referred to as being “entirely” on another element, it may be on the entire surface of the other element and may not be on a portion of an edge of the other element.
  • Example embodiments of the invention will be described in detail with reference to FIGS. 1 to 4 .
  • FIG. 1 is a schematic perspective view of a solar cell according to a first embodiment of the invention.
  • FIG. 2 is a plane view showing a back surface of the solar cell shown in FIG. 1 .
  • the solar cell according to the first embodiment of the invention includes a substrate 110 , an emitter region 120 positioned at one surface of the substrate 110 , for example, a front surface of the substrate 110 , a first passivation layer 130 positioned on the emitter region 120 , a first anti-reflection layer 140 positioned on the first passivation layer 130 , a plurality of first electrodes 150 a and a first current collector 150 b positioned on the emitter region 120 on which the first passivation layer 130 and the first anti-reflection layer 140 are not positioned, a back surface field (BSF) region (shown as elements 161 and 162 ) positioned at a back surface of the substrate 110 , a second passivation layer 170 positioned on the back surface of the substrate 110 , a second anti-reflection layer 180 positioned on a back surface of the second passivation layer 170 , and a plurality of second electrodes 190 a and a second current collector 190 b
  • BSF back surface field
  • the substrate 110 may be formed of a silicon wafer of a first conductive type, for example, n-type, though not required. Silicon used in the substrate 110 may be single crystal silicon, polycrystalline silicon, or amorphous silicon.
  • the substrate 110 may contain impurities of a group V element such as phosphorus (P), arsenic (As), and antimony (Sb).
  • the substrate 110 may have resistivity of about 1 ⁇ cm 2 to 10 ⁇ cm 2 .
  • the surface of the substrate 110 may be uniformly textured to form a textured surface corresponding to an uneven surface or having uneven characteristics. More specifically, the substrate 110 has a first textured surface corresponding to the front surface, at which the emitter region 120 is positioned, and a second textured surface corresponding to the back surface opposite the front surface.
  • the emitter region 120 positioned at the front surface of the substrate 110 is an impurity region of a second conductive type (for example, p-type) opposite the first conductive type (for example, n-type) of the substrate 110 .
  • the emitter region 120 forms a p-n junction along with the substrate 110 .
  • Carriers i.e., electron-hole pairs produced by light incident on the substrate 110 are separated into electrons and holes by a built-in potential difference resulting from the p-n junction between the substrate 110 and the emitter region 120 . Then, the separated electrons move to the n-type semiconductor, and the separated holes move to the p-type semiconductor.
  • the separated electrons move to the substrate 110 and the separated holes move to the emitter region 120 .
  • the emitter region 120 When the emitter region 120 is of the p-type, the emitter region 120 may be formed by doping impurities of a group III element such as boron (B), gallium (Ga), and indium (In) on the substrate 110 .
  • a group III element such as boron (B), gallium (Ga), and indium (In)
  • the first passivation layer 130 positioned on the emitter region 120 formed at the front surface of the substrate 110 is formed of a material having negative fixed charges, for example, aluminum oxide (AlO x ) or yttrium oxide (Y 2 O 3 ).
  • the material of the first passivation layer 130 such as AlO x or Y 2 O 3 has excellent chemical passivation characteristic resulting from a low interface trap density and excellent field effect passivation characteristic resulting from the negative fixed charges. Further, the material is very excellent in stability, moisture transmission, and abrasion resistance.
  • the first passivation layer 130 reduces a recombination velocity of carries at the surface of the substrate 110 , thereby improving the efficiency and the reliability of the solar cell.
  • the first anti-reflection layer 140 positioned on the first passivation layer 130 is formed of a material having positive fixed charges, for example, silicon nitride (SiN x ).
  • the first anti-reflection layer 140 reduces a reflectance of light incident on the solar cell through the front surface of the substrate 110 and increases selectivity of a predetermined wavelength band, thereby increasing the efficiency of the solar cell.
  • the first passivation layer 130 has a refractive index of about 1.55 to 1.7 and a thickness of about 5 nm to 30 nm, so as to minimize the light reflectance at the front surface of the substrate 110 .
  • the first anti-reflection layer 140 has a refractive index of about 1.9 to 2.3 and a thickness of about 50 nm to 100 nm.
  • the light reflectance at the front surface of the substrate 110 represented a minimum value when the first passivation layer 130 and the first anti-reflection layer 140 were within the above refractive index and thickness ranges.
  • a silicon oxide layer having a thickness of about 1 nm to 3 nm may be further formed at an interface between the first passivation layer 130 and the emitter region 120 .
  • the plurality of first electrodes 150 a are positioned on the emitter region 120 of the front surface of the substrate 110 and are electrically and physically connected to the emitter region 120 .
  • the first electrodes 150 a elongate (or extend) along a first direction X-X′ shown in FIG. 1 and extend substantially parallel to one another at a uniform distance therebetween.
  • the first electrodes 150 a collect carriers (for example, holes) moving to the emitter region 120 .
  • the first electrodes 150 a may be formed of at least one conductive material selected from the group consisting of nickel (Ni), copper (Cu), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), and a combination thereof. Other conductive materials may be used.
  • the first electrodes 150 a may be formed by printing and firing a conductive paste containing the conductive material using a screen printing method or performing a plating process using a seed layer.
  • the first current collector 150 b is positioned on the emitter region 120 of the front surface of the substrate 110 and is electrically and physically connected to the emitter region 120 in the same manner as the first electrodes 150 a.
  • the first current collector 150 b is electrically and physically connected to the first electrodes 150 a.
  • the first current collector 150 b elongates (or extends) along a second direction Y-Y′ perpendicular to the first direction X-X′.
  • the first current collector 150 b may be formed using the same material and method as the first electrodes 150 a.
  • the back surface field region is locally formed at the back surface of the substrate 110 .
  • the fact that the back surface field region is locally formed is that the back surface field region is not formed at the entire back surface of the substrate 110 and is formed in a portion of the back surface of the substrate 110 , for example, only at a location corresponding to the second electrodes 190 a and the second current collector 190 b.
  • the back surface field region is a region (for example, an n + -type region) that is more heavily doped than the substrate 110 with impurities of the same conductive type as the substrate 110 .
  • a potential barrier is formed by a difference between impurity concentrations of the substrate 110 and the back surface field region, and thus prevents or reduces the movement of carriers to the back surface of the substrate 110 .
  • the back surface field region prevents or reduces a recombination and/or a disappearance of electrons and holes at and around the back surface of the substrate 110 .
  • the back surface field region includes a plurality of first field regions 161 , each of which is formed at a location corresponding to each second electrode 190 a, and a second field region 163 formed at a location corresponding to the second current collector 190 b.
  • a dose concentration of ions used to form the back surface field region is set to a concentration capable of securing contact resistance characteristics at the back surface of the substrate 110 , preferably, about 3.5E20/cm 2 to 5.5E20/cm 2 .
  • a concentration of the ions in the back surface of the substrate 110 after a thermal process may be about 1E19/cm 2 to 5E20/cm 2 .
  • a junction depth of the back surface field region may be about 0.3 ⁇ m to 1.8 ⁇ m. In the embodiment of the invention, the junction depth indicates a thickness of the back surface field region. In embodiments of the invention, the junction depth of the back surface field region may vary according to a texturing of the back surface of the substrate 110 . Also, the concentration of the ions in the back surface (or the back surface field region) of the substrate 110 may be referred to as a surface concentration.
  • the first region 161 a of the first field region 161 is a region which directly contacts the second electrode 190 a elongating (or extending) in the first direction X-X′ and overlaps the second electrode 190 a.
  • the third region 163 a of the second field region 163 is a region which directly contacts the second current collector 190 b elongating (or extending) in the second direction Y-Y′ and overlaps the second current collector 190 b.
  • the second region 161 b of the first field region 161 is a region which is positioned around the first region 161 a in the second direction Y-Y′ and does not overlap the second electrode 190 a.
  • the fourth region 163 b of the second field region 163 is a region which is positioned around the third region 163 a in the first direction X-X′ and does not overlap the second current collector 190 b.
  • the second region 161 b contacts the fourth region 163 b.
  • the second electrode 190 a is positioned on the first region 161 a of the first field region 161 and directly contacts the first region 161 a.
  • the second current collector 190 b is positioned on the third region 163 a of the second field region 163 and directly contacts the third region 163 a.
  • the second electrodes 190 a and the second current collector 190 may be formed of at least one conductive material selected from the group consisting of nickel (Ni), copper (Cu), silver (Ag), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), and a combination thereof. Other conductive materials may be used.
  • the second electrodes 190 a and the second current collector 190 b collect carriers moving to the substrate 110 and output the carriers to the outside.
  • a line width W 1 of the second current collector 190 b is greater than a line width W 2 of the second electrode 190 a, so as to improve collection efficiency of carriers.
  • the line width W 1 of the second current collector 190 b may be about 1,000 ⁇ m to 3,000 ⁇ m, preferably, 1,500 ⁇ m.
  • the line width W 2 of the second electrode 190 a may be about 50 ⁇ m to 150 ⁇ m.
  • a line width W 2 ′ of the first field region 161 including the first region 161 a and the second region 161 b may be about two times to 4.5 times the line width W 2 of the second electrode 190 a.
  • the line width W 2 of the second electrode 190 a is about 50 ⁇ m to 150 ⁇ m
  • the line width W 2 ′ of the first field region 161 may be about 100 ⁇ m to 600 ⁇ m.
  • the second regions 161 b may be respectively formed at both sides (or opposite sides) of the first region 161 a in the second direction Y-Y′ and may have the same line width.
  • the second regions 161 b respectively formed at both sides (or opposite sides) of the first region 161 a may have different line widths.
  • the second region 161 b may be formed only at one side of the first region 161 a in the second direction Y-Y′.
  • a distance D 1 between the adjacent first field regions 161 in the second direction Y-Y′ is less than a distance D 2 between the adjacent second electrodes 190 a in the second direction Y-Y′.
  • a process margin may be sufficiently secured when the first field regions 161 and the second electrodes 190 a are formed. Further, a problem resulting from the misalignment of the first field regions 161 and the second electrodes 190 a may be reduced or removed.
  • the distance D 2 between the adjacent second electrodes 190 a is less than a distance D 2 ′ between the adjacent first electrodes 150 a, so as to prevent or reduce an increase in the serial resistance in the back surface of the substrate 110 .
  • the distance D 2 ′ between the adjacent first electrodes 150 a may be equal to or greater than about 2.5 mm, and the distance D 2 between the adjacent second electrodes 190 a may be equal to or greater than about 1.0 mm and less than about 2.5 mm.
  • a line width W 1 ′ of the second field region 163 formed in a formation area of the second current collector 190 b is greater than the line width W 2 ′ of the first field region 161 .
  • the second field region 163 formed at the location corresponding to the second current collector 190 b has a process margin less than the first field region 161 formed in a formation area of the second electrode 190 a, but may easily remove the problem resulting from the misalignment.
  • the line width W 1 ′ of the second field region 163 including the third region 163 a and the fourth region 163 b may be greater than the line width W 1 of the second current collector 190 b, and equal to or less than about 1.5 times the line width W 1 of the second current collector 190 b.
  • the line width W 1 of the second current collector 190 b is about 1.5 mm
  • the line width W 1 ′ of the second field region 163 may be about 1.6 mm to 2.0 mm.
  • the fourth regions 163 b may be respectively formed at both sides (or opposite sides) of the third region 163 a in the first direction X-X′ and may have the same line width. Alternatively, the fourth regions 163 b respectively formed at both sides (or opposite sides) of the third region 163 a may have different line widths. Alternatively, the fourth region 163 b may be formed only at one side of the third region 163 a in the first direction X-X′.
  • the back surface field region including the first field regions 161 and the second field region 163 may be locally formed at the back surface of the substrate 110 through an ion implantation process using a mask.
  • the back surface field region is formed through the ion implantation process, the back surface field region is not formed at an edge of the substrate 110 . Thus, a separate process for the edge isolation is not necessary.
  • the performance of the passivation layer is improved in the non-formation area of the back surface field region, a recombination rate of carriers is reduced.
  • a current density and an open voltage of the solar cell increase, and the efficiency of the solar cell is improved.
  • the second passivation layer 170 and the second anti-reflection layer 180 are positioned on the back surface of the substrate 110 , on which the second electrodes 190 a and the second current collector 190 b are not positioned.
  • the second passivation layer 170 is formed of the same material as the first passivation layer 130 and has the same thickness as the first passivation layer 130 .
  • the second anti-reflection layer 180 is formed of the same material as the first anti-reflection layer 140 and has the same thickness as the first anti-reflection layer 140 .
  • the second passivation layer 170 positioned on the back surface of the substrate 110 is formed of a material having negative fixed charges, for example, aluminum oxide (AlO x ) or yttrium oxide (Y 2 O 3 ), carriers moving to the back surface of the substrate 110 is affected by the second passivation layer 170 .
  • AlO x aluminum oxide
  • Y 2 O 3 yttrium oxide
  • the back surface field region is locally positioned only at the same location as the second electrodes 190 a and the second current collector 190 b, an influence of the second passivation layer 170 formed of aluminum oxide (AlO x ) or yttrium oxide (Y 2 O 3 ) on carriers moving to the back surface field region may be minimized.
  • AlO x aluminum oxide
  • Y 2 O 3 yttrium oxide
  • the solar cell having the above-described structure according to the embodiment of the invention may be used as a bifacial solar cell, and an operation of the solar cell is described below.
  • the front surface and the back surface of the substrate 110 are the textured surface, light reflectance in the front surface and the back surface of the substrate 110 is reduced. Further, because both a light incident operation and a light reflection operation are performed on the textured surfaces of the substrate 110 , light is confined in the solar cell. Hence, a light absorptance and efficiency of the solar cell are improved.
  • a reflection loss of light incident on the substrate 110 is reduced by the first passivation layer 130 and the first anti-reflection layer 140 positioned on the front surface of the substrate 110 and the second passivation layer 170 and the second anti-reflection layer 180 positioned on the back surface of the substrate 110 .
  • an amount of light incident on the substrate 110 further increases.
  • the electron-hole pairs are separated into electrons and holes by the p-n junction between the substrate 110 and the emitter region 120 . Then, the separated electrons move to the n-type substrate 110 , and the separated holes move to the p-type emitter region 120 . As described above, the electrons moving to the substrate 110 move to the second electrodes 190 a and the second current collector 190 b through the first field regions 161 and the second field region 163 of the back surface field region, and the holes moving to the emitter region 120 move to the first electrodes 150 a and the first current collector 150 b.
  • the solar cell having the above-described configuration may be used in a state where the solar cell is positioned between a light transmission front substrate and a light transmission back substrate and is sealed by a protective layer.
  • a solar cell according to a second embodiment of the invention is described below with reference to FIGS. 3 and 4 .
  • configuration of the solar cell according to the second embodiment of the invention is substantially the same as the solar cell according to the first embodiment of the invention except an emitter region and a back surface field region, a further description may be briefly made or may be entirely omitted.
  • the emitter region 120 of the solar cell according to the first embodiment of the invention substantially has a uniform doping concentration throughout the entire front surface of the substrate 110 .
  • the emitter region 120 according to the first embodiment of the invention may be easily manufactured through a simple process, but a recombination rate of carriers may increase because of the high doping concentration of the emitter region 120 .
  • an improvement in the efficiency of the solar cell may be limited.
  • the solar cell according to the second embodiment of the invention includes a selective emitter region 220 including a heavily doped region formed at a location corresponding to first electrodes 150 a and a first current collector 150 b, and a lightly doped region excluding the heavily doped region from the selective emitter region 220 , so as to reduce the recombination rate of carriers.
  • the selective emitter region 220 includes a first doped region 221 which is lightly doped with p-type impurities, and a second doped region 222 , which is more heavily doped than the first doped region 221 with p-type impurities.
  • an impurity doping thickness of the second doped region 222 is greater than an impurity doping thickness of the first doped region 221 .
  • a thickness of the second doped region 222 is greater than a thickness of the first doped region 221 , and bottom surfaces of the first and second doped regions 221 and 222 are positioned on the same plane (or are coplanar).
  • the selective emitter region 220 having the above-described structure may be formed using an etch back process.
  • a sheet resistance of the second doped region 222 is less than a sheet resistance of the first doped region 221 .
  • the sheet resistance of the first doped region 221 may be about 80 ⁇ /sq to 200 ⁇ /sq
  • the sheet resistance of the second doped region 222 may be about 30 ⁇ /sq to 80 ⁇ /sq.
  • the second doped region 222 may be formed at the front surface of the substrate 110 , on which the first electrodes 150 a and the first current collector 150 b are positioned.
  • a line width of the second doped region 222 formed at the front surface of the substrate 110 , on which the first electrode 150 a is positioned, may be greater than a line width of the first electrode 150 a, because of the same reason why the line width W 2 ′ of the first field region 161 is greater than the line width W 2 of the second electrode 190 a in the first embodiment of the invention illustrated in FIGS. 1 and 2 .
  • a line width of the second doped region 222 formed at the front surface of the substrate 110 , on which the first current collector 150 b is positioned may be greater than a line width of the first current collector 150 b, because of the same reason why the line width W 1 ′ of the second field region 163 is greater than the line width W 1 of the second current collector 190 b in the first embodiment of the invention illustrated in FIGS. 1 and 2 .
  • the solar cell having the above-described selective emitter structure reduces the recombination rate of carriers and thus may improve the efficiency.
  • the back surface field region formed at the back surface of the substrate 110 includes only a plurality of first field regions 161 unlike the first embodiment of the invention. Namely, a second field region is not formed at a location corresponding to the second current collector 190 b.
  • Each of the first field regions 161 elongates (or extends) in the first direction X-X′ and thus crosses the second current collector 190 b elongating (or extending) in the second direction Y-Y′. Thus, a portion of the first field region 161 overlaps a portion of the second current collector 190 b.
  • the first field regions 161 may not be formed in a formation area of the second current collector 190 b.
  • the structure of the emitter region according to the first embodiment of the invention illustrated in FIGS. 1 and 2 and the structure of the back surface field region according to the second embodiment of the invention illustrated in FIGS. 3 and 4 may be used together. Further, the structure of the back surface field region according to the first embodiment of the invention illustrated in FIGS. 1 and 2 and the structure of the emitter region according to the second embodiment of the invention illustrated in FIGS. 3 and 4 may be used together.
  • all of the first electrodes 150 a, the first current collector 150 b, the second electrodes 190 a, and the second current collector 190 b have a stripe shape. Other shapes may be used for them in other embodiments of the invention.
  • first electrodes 150 a and the second electrodes 190 a may have a zigzag shape which has a certain width and is bent in the second direction Y-Y′.
  • first current collector 150 b and the second current collector 190 b may have a zigzag shape which has a certain width and is bent in the first direction X-X′.
  • the first electrodes 150 a may or may not be aligned with the second electrodes 190 a. In embodiments of the invention, none or only some of the first electrodes 150 a may be aligned with the second electrodes 190 a. In other embodiments of the invention, all or most of the first electrodes 150 a may be aligned with the second electrodes 190 a.

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