US20130152605A1 - Fluid temperature adjusting device - Google Patents

Fluid temperature adjusting device Download PDF

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Publication number
US20130152605A1
US20130152605A1 US13/719,573 US201213719573A US2013152605A1 US 20130152605 A1 US20130152605 A1 US 20130152605A1 US 201213719573 A US201213719573 A US 201213719573A US 2013152605 A1 US2013152605 A1 US 2013152605A1
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United States
Prior art keywords
fluid
temperature
heater
operation amount
peltier module
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Abandoned
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US13/719,573
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English (en)
Inventor
Mitsuru Mimata
Koji Maeda
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Kelk Ltd
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Kelk Ltd
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Assigned to KELK LTD. reassignment KELK LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MAEDA, KOJI, MIMATA, MITSURU
Publication of US20130152605A1 publication Critical patent/US20130152605A1/en
Abandoned legal-status Critical Current

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00—Machines, plants or systems, using electric or magnetic effects
    • F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
    • F25B21/04—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect reversible
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
    • F25B2321/021—Control thereof

Definitions

  • the present invention relates to a fluid temperature adjusting device.
  • the semiconductor manufacture and the like have a process of cleaning a semiconductor such as a semiconductor wafer using a heated liquid.
  • the semiconductor is cleaned by a liquid of which the temperature is adjusted to a predetermined temperature in response to each process.
  • the temperature of the liquid is different for each process, and may be a temperature (for example, 15° C.) lower than a room temperature or a temperature (for example, 50° C.) higher than a room temperature. Since the adjustment in the temperature of the liquid is handled by the same temperature control device, there is a demand that a temperature adjusting device needs to be equipped with both heating and cooling functions. As a device for satisfying such a demand, a peltier module is widely used.
  • the cleaning liquid Since the cleaning liquid is degraded when the cleaning liquid is used for a long period of time, the cleaning liquid is replaced when the cleaning liquid is degraded to some extent.
  • the cleaning liquid When replacing the cleaning liquid, there is a need to increase the temperature of the liquid at a room temperature to, for example, 50° C., but it takes a time until the temperature of the liquid increases to some extent.
  • the process of cooling the chemical liquid occupies a small time compared to the process of heating the liquid to a high temperature, the shortening of the cooling time is not strongly demanded.
  • Japanese Laid-open Patent Publication No. 2007-87774 discloses a method of controlling a liquid temperature adjusting device that uses a peltier module with a plurality of peltier elements and a heater.
  • the amount of the power supplied to the peltier module is decreased or the supply of the power is stopped while using the heater together simultaneously when starting a new liquid injecting process.
  • the liquid is kept at a target temperature by controlling the temperature of the liquid through the control of the supply of the power to the peltier module.
  • the maximum heating capability may be increased, so that the temperature increasing time (the time until the liquid becomes the target temperature) may be shortened.
  • the temperature increasing time the time until the liquid becomes the target temperature
  • the heater uses a cycle control or a duty control through an AC power supply, but has a limitation in the output resolution of the thermal energy. In a region where the thermal energy output resolution of the heater influences the temperature control result, the temperature control performance is improved by mainly using the heating of the peltier module, and hence the temperature increasing time may be shortened.
  • a fluid temperature adjusting device comprises: a heater configured to heat a fluid passing through a fluid passageway; a peltier module including a plurality of peltier elements, the peltier module being configured to heat or cool the fluid passing through the fluid passageway; and a controller configured to divide a total thermal energy for keeping the fluid at a target temperature into a thermal energy to be supplied from the heater and a thermal energy to be supplied from the peltier module to give the total thermal energy from both the heater and the peltier module to the fluid.
  • FIG. 1 is a schematic diagram illustrating an example of a semiconductor wafer processing device that includes a fluid temperature adjusting device according to the embodiment
  • FIG. 2 is a diagram of a cooling and heating device that is included in the fluid temperature adjusting device according to the embodiment
  • FIG. 3 is a control block diagram of a controller that is included in the fluid temperature adjusting device according to the embodiment
  • FIG. 4 is a diagram illustrating a change in the upper limit value of an operation amount
  • FIG. 5 is a diagram illustrating a change in the upper limit value of the operation amount.
  • FIG. 6 is a diagram illustrating an example of an operation amount of a peltier module and an operation amount of a heater.
  • FIG. 1 is a schematic diagram illustrating an example of a semiconductor wafer processing device that includes a fluid temperature adjusting device according to the embodiment.
  • FIG. 2 is a diagram of a cooling and heating device that is included in the fluid temperature adjusting device according to the embodiment.
  • a semiconductor wafer processing device 100 illustrated in FIG. 1 is a device that cleans a semiconductor wafer W of silicon or the like using a fluid L such as heated pure water in a manufacturing process of a semiconductor device.
  • the semiconductor wafer processing device 100 includes a fluid temperature adjusting device 1 , a control device 2 , a liquid tank 3 , fluid pipes 4 A to 4 G, a pump 5 , valves 6 A to 6 C, and a cleaning unit 7 .
  • the fluid temperature adjusting device 1 is a device that heats or cools a fluid L for cleaning the semiconductor wafer W so as to adjust the temperature thereof.
  • the fluid L is a liquid such as pure water, but the fluid L is not limited to the liquid and may be a gas. Regardless of the type of the fluid L, the fluid may be other than pure water.
  • a fluid temperature control device 10 includes a controller 11 , a heater driving unit 12 , and a peltier driving unit 13 .
  • the controller 11 is, for example, a microcomputer, and includes a calculation device of a CPU (Central Processing Unit) and a storage device such as a memory.
  • the heater driving unit 12 and the peltier driving unit 13 are, for example, driver circuits that include a switching element.
  • the controller 11 controls an operation of at least one of the heater driving unit 12 and the peltier driving unit 13 based on, for example, the operation amount which is input from the control device 2 or the operator's manual operation. Further, since the controller 11 protects a cooling and heating device 20 , the controller performs a control in which an upper limit value is set in the operation amount. The controller 11 realizes such a control in a manner such that the calculation device executes a command of a computer program stored in the storage device.
  • At least one of the heater driving unit 12 and the peltier driving unit 13 drives at least one of a heater 22 and a peltier module 23 included in the cooling and heating device 20 based on the instruction value transmitted from the controller 11 .
  • the above-described operation amount is an index which corresponds to the amount of the thermal energy that is exchanged between the cooling and heating device 20 and the fluid L.
  • the operation amount is obtained, for example, based on the target temperature of the fluid L by the control device 2 .
  • the controller 11 divides the total thermal energy for keeping the fluid L at the target temperature by heating the fluid L into the supply amount of the heater 22 and the supply amount of the peltier module 23 , and gives the thermal energies from both the heater 22 and the peltier module 23 to the fluid L.
  • the supply amount of the heater 22 is a ratio of a heating output of the heater 22 with respect to the maximum heating capability of the heater 22
  • the supply amount of the peltier module 23 is a ratio of a heating output of the peltier module 23 with respect to the maximum heating capability of the peltier module 23 .
  • the supply amount corresponds to a so-called operation amount.
  • the controller 11 drives only the peltier module 23 so as to remove the thermal energy from the fluid L and hence cools the fluid L. Furthermore, not only in a case where the fluid L is kept at the target temperature, but also, for example, in a case where the temperature of the new fluid L is increased by heating the fluid L when the new fluid is supplied thereto, the controller 11 may divide the thermal energy into the supply amount of the heater 22 and the supply amount of the peltier module 23 and give the thermal energies from both the heater 22 and the peltier module 23 to the fluid L.
  • the cooling and heating device 20 includes a heater 22 which heats the fluid L passing through a fluid passageway 21 and a peltier module 23 which is a module of a peltier element for heating or cooling the fluid L passing through the fluid passageway 21 .
  • the peltier module 23 includes a plurality of peltier elements.
  • the fluid passageway 21 is formed inside a body 20 B.
  • the body 20 B is formed of a material which does not easily generate impurities when contacting the fluid L and is not easily affected by acid or alkali. As such a material, for example, fluorine resin is known. In the embodiment, the body 20 B is formed of fluorine resin.
  • the fluid passageway 21 is formed inside the body 20 B, the fluid L which passes through the fluid passageway 21 contacts the fluorine resin. Since the fluorine resin does not easily generate impurities as described above, the fluorine resin is particularly suitable for the case where the cooling and heating device 20 is applied to the semiconductor manufacturing process in which impurities need to be removed as much as possible.
  • the heater 22 is attached to the inside of a heat transfer member (a heat transfer plate) 24 provided in the fluid passageway 21 .
  • the peltier module 23 is attached on the surface of the heat transfer member 24 , and is disposed at a position away from the fluid passageway 21 in relation to the heat transfer member 24 . That is, the cooling and heating device 20 is provided with the heater 22 and the peltier module 23 which are disposed in an order from the fluid passageway 21 .
  • the fluid L which flows from a fluid inlet 211 of the fluid passageway 21 is heated by the heater 22 and the peltier module 23 while passing through the fluid passageway 21 so as to increase in temperature. Further, the fluid L which passes through the fluid passageway 21 is cooled by the peltier module 23 .
  • the peltier module 23 is used both to cool and heat the fluid L.
  • the heater 22 is used only to heat the fluid L.
  • An outlet temperature sensor 31 which measures the temperature of the fluid L of which the temperature has been adjusted is provided at the downstream side (at the downstream side in the circulation direction of the fluid L) of the fluid outlet 21 E.
  • the heat transfer member 24 is provided with a heat transfer member temperature sensor 32 which measures the temperature of the heat transfer member 24 .
  • the outside of the peltier module 23 is provided with a heat absorbing and radiating device 25 which cools the peltier module 23 .
  • the heat absorbing and radiating device 25 promotes an operation of absorbing and radiating the heat of the peltier module 23 .
  • two heat transfer members 24 , two peltier modules 23 , and two heat absorbing and radiating devices 25 are disposed at each of both sides of the fluid passageway 21 . That is, the cooling and heating device 20 includes four heat transfer members 24 , four peltier modules 23 , and four heat absorbing and radiating devices 25 .
  • one heat transfer member 24 includes three heaters 22 .
  • the fluid passageway 21 includes a branched passageway 21 M, a plurality of heat exchange portions 21 EX, and a collecting passageway 21 C.
  • the branched passageway 21 M which is introduced from the outside of the body 20 B thereinto is branched inside the body 20 B, and the branched portions are respectively connected to the plurality of (in the embodiment, four) heat exchange portions 21 EX.
  • the respective heat exchange portions 21 EX are connected to the collecting passageway 21 C inside the body 20 B.
  • the respective heat exchange portions 21 EX are arranged so as to face the heat transfer member 24 .
  • each heat exchange portion 21 EX for example, a liquid contact member which has high corrosion resistance and generates a small amount of impurities is disposed in the heat transfer member 24 .
  • the collecting passageway 21 C is integrated with the inside of the body 20 B, and is drawn to the outside of the body 20 B.
  • the above-described outlet temperature sensor 31 may be provided at the downstream side in the circulation direction of the fluid L in relation to the heat exchange portion 21 EX and may be provided at the collecting passageway 21 C.
  • the fluid L which flows from the fluid inlet 211 of the fluid passageway 21 into the branched passageway 21 M is introduced from the branched passageways 21 M to the respective heat exchange portions 21 EX.
  • the fluid L inside the heat exchange portion 21 EX performs a heat exchange operation with respect to the heat transfer member 24 .
  • the fluid L of which the temperature increases or decreases in the heat exchange portion 21 EX flows into the collecting passageway 21 C, and flows to the outside of the body 20 B from the fluid outlet 21 E of the fluid passageway 21 . In this way, the cooling and heating device 20 heats or cools the fluid L.
  • the controller 11 gives the total energy supplied to the fluid L while the energy is divided into the supply amount of the heater 22 and the supply amount of the peltier module 23 when heating the fluid L so as to keep the fluid L at the target temperature. Since the heating capabilities of the heater 22 and the peltier module 23 are not extremely different from each other, it is possible to easily perform a control in which the total energy supplied to the fluid L is divided. Further, it is possible to effectively use the heating capabilities of the heater 22 and the peltier module 23 without any waste.
  • the semiconductor wafer processing device 100 illustrated in FIG. 1 is a device which is called a sheet cleaning device that includes a plurality of cleaning units 7 for cleaning the semiconductor wafer W one by one.
  • the fluid temperature adjusting device 1 increases the temperature of the fluid L when cleaning the semiconductor wafer W. For this reason, the fluid temperature adjusting device 1 needs to have a function of promptly increasing the temperature of the fluid L to the necessary temperature. Since the fluid temperature adjusting device 1 may heat the fluid L by using both the peltier module 23 and the heater 22 , it is possible to promptly increase the temperature of the fluid L. As a result, in the semiconductor wafer processing device 100 which increases the temperature of the fluid L by the fluid temperature adjusting device 1 , it is possible to shorten the time from the cleaning start time of the semiconductor wafer W to the cleaning end time thereof.
  • the fluid temperature adjusting device 1 heats the fluid L by using both the peltier module 23 and the heater 22 , but the heater 22 may be provided in a compact size at a comparatively low cost. For this reason, the size of the cooling and heating device 20 may be decreased, and the manufacture cost may be decreased. Further, since the fluid temperature adjusting device 1 exhibits the same heating capability in both the peltier module 23 and the heater 22 , there is no need to increase one-side heating capability. For this reason, it is possible to suppress an increase in cost caused when increasing any heating performance of the peltier module 23 or the heater 22 . Further, since the peltier module 23 may control the heating amount or the cooling amount with high precision, it is possible to suppress degradation in the stability of the temperature of the fluid L in a region where the heating amount is particularly small.
  • the control device 2 is a device which controls the entire operation of the semiconductor wafer processing device 100 .
  • the control device 2 is, for example, a microcomputer, and includes a calculation device of a CPU (Central Processing Unit) and a storage device such as a memory.
  • the control device 2 obtains the operation amount of the cooling and heating device 20 in a manner such that the calculation device executes a command or a computer program stored in, for example, the storage device, and transmits the operation amount to the controller 11 of the fluid temperature adjusting device 1 .
  • the operation amount is defined based on, for example, a difference between the temperature (the target temperature) of the fluid L suitable for cleaning the semiconductor wafer W and the temperature of the fluid L after adjusting the temperature thereof by the cooling and heating device 20 .
  • control device 2 obtains the operation amount
  • the control device 2 obtains a difference between the target temperature of the fluid L and the temperature of the fluid L obtained from the outlet temperature sensor 31 provided at the downstream side of the fluid outlet 21 E of the cooling and heating device 20 , and obtains the operation amount so that the difference becomes 0.
  • control device 2 controls the operations of the pump 5 and the valves 6 A to 6 C included in the semiconductor wafer processing device 100 . Further, the control device 2 controls the temperature of the fluid L inside the liquid tank 3 based on the temperature of the fluid L accumulated in the liquid tank 3 and obtained from a liquid tank temperature sensor 33 provided in the liquid tank 3 .
  • the liquid tank 3 is a device which accumulates the fluid L for cleaning the semiconductor wafer.
  • the liquid tank 3 and the fluid inlet 21 I of the cooling and heating device 20 are connected to each other by the pipe 4 A.
  • the pipe 4 A sends the fluid L inside the liquid tank 3 to the cooling and heating device 20 .
  • the pipe 4 B is connected to the fluid outlet 21 E of the cooling and heating device 20 .
  • the pump 5 is provided in the course of the pipe 4 B.
  • the pipe 4 B at the discharge port side of the pump 5 is connected to the pipe 4 C.
  • the pipe 4 C one side thereof is connected to the liquid tank 3 , and the other side thereof is branched to the plurality of pipes 4 D.
  • Each pipe 4 D is provided with the valve 6 .
  • the semiconductor wafer W to be cleaned is cleaned at the outlet side of each pipe 4 D.
  • the portion is the cleaning unit 7 .
  • the fluid L having been used for cleaning the semiconductor wafer W is collected in the pipe 4 F through the pipe 4 E.
  • One end side of the pipe 4 F is connected to the liquid tank 3 .
  • the valve 6 B is provided at the side of the liquid tank 3 of the pipe 4 F in relation to the cleaning unit 7 closest to the liquid tank 3 .
  • the other end side of the pipe 4 F is connected to the pipe 4 G.
  • the pipe 4 G is provided with the valve 6 C.
  • the control device 2 drives the pump 5 in a state where all valves 6 A are closed and the fluid L is not supplied to each of the cleaning units 7 .
  • the control device 2 controls the fluid temperature adjusting device 1 so that the temperature of the fluid L accumulated in the liquid tank 3 becomes a predetermined temperature.
  • the fluid L circulates between the fluid temperature adjusting device 1 and the liquid tank 3 , so that the temperature of the fluid L inside the liquid tank 3 is adjusted to a predetermined temperature.
  • the control device 2 drives the pump 5 and opens the valve 6 A of the cleaning unit 7 for cleaning the semiconductor wafer W. At this time, the control device 2 controls the fluid temperature adjusting device 1 so that the temperature of the fluid L becomes a temperature suitable for cleaning the semiconductor wafer W. With such a configuration, the fluid L of which the temperature is adjusted to a temperature suitable for cleaning the semiconductor wafer W is supplied from the fluid temperature adjusting device 1 to the semiconductor wafer W to be cleaned.
  • the fluid L having been used for the cleaning operation When the fluid L having been used for the cleaning operation may be used, the fluid L is returned to the liquid tank 3 after it is filtrated through the pipe 4 F and the valve 6 B.
  • the control device 2 closes the valve 6 B and opens the valve 6 C so that the fluid L is discharged to the outside of the semiconductor wafer processing device 100 .
  • a control of controlling the temperature of the fluid L using the fluid temperature adjusting device 1 will be described.
  • FIG. 3 is a control block diagram of the controller included in the fluid temperature adjusting device according to the embodiment.
  • FIGS. 4 and 5 are diagrams illustrating a change in the upper limit value of the operation amount.
  • FIG. 6 is a diagram illustrating an example of the operation amount of the peltier module and the operation amount of the heater.
  • the controller 11 receives an input of an operation amount MV illustrated in a control block B 1 .
  • the operation amount MV it is possible to use, for example, an operation amount of a PID control using the control device 2 illustrated in FIG. 1 , that is, an operation amount which is defined based on a difference between the target temperature of the fluid L suitable for cleaning the semiconductor wafer W and the temperature of the fluid L of which the temperature is adjusted by the cooling and heating device 20 .
  • the operation amount MV may be an operation amount (an external operation amount input) which is input from the outside to the controller 11 through a communication line and the like.
  • a limit value (a seal portion protection upper limit value) is defined from the temperature of the seal portion.
  • the seal portion protection upper limit value is provided so as to protect the seal portion of the cooling and heating device 20 illustrated in FIGS. 1 and 2 from overheating.
  • the seal portion of the cooling and heating device 20 is a portion which is necessary to realize the seal function, and is, for example, an O-ring, a backup ring, an adhesive, or a liquid contact member which is interposed between the heat transfer member 24 and the fluid passageway 21 illustrated in FIGS. 1 and 2 .
  • the temperature may be estimated from the temperature of the heat transfer member 24 .
  • the controller 11 sets a seal portion protection upper limit value MVsl illustrated in FIG. 4 based on a heat transfer member temperature PV 3 .
  • the controller 11 compares the set seal portion protection upper limit value MVsl with the output (operation amount) MV of the control block B 1 , and sets the small one as an output MVs. Accordingly, the output MVs of a control block B 2 becomes a small one of the outputs MV and MVsl of the control block B 1 .
  • the seal portion protection upper limit value MVsl changes from ⁇ 1 to 1. Further, the seal portion protection upper limit value MVsl changes based on the temperature (heat transfer member temperature) PV 3 of the heat transfer member 24 .
  • the heat transfer member temperature PV 3 is measured by the heat transfer member temperature sensor 32 which is provided in the heat transfer member 24 .
  • the seal portion protection upper limit value MVsl decreases with an increase in the heat transfer member temperature PV 3 .
  • the output MVs of the control block B 2 becomes a small one of MVsl and MV. In a region where the heat transfer member temperature PV 3 is equal to or higher than T 4 , the output MVs of the control block B 2 becomes smaller than the operation amount MV as a result in which the upper limit value is set in the operation amount MV.
  • the seal portion protection upper limit value MVsl linearly and continuously decreases according to a linear function with an increase in the heat transfer member temperature PV 3 .
  • the seal portion protection upper limit value MVsl is 0. That is, since the output MVs of the control block B 2 becomes 0, the operation amount MV of the heater 22 and the peltier module 23 becomes 0.
  • the seal portion protection upper limit value MVsl linearly and continuously decreases according to a linear function with an increase in the heat transfer member temperature PV 3 , and hence becomes a negative value.
  • the output MVs of the control block B 2 becomes a negative value. This means that the cooling and heating device 20 is cooled.
  • the controller 11 performs a control so that the peltier module 23 is cooled based on the output MVs.
  • the seal portion protection upper limit value MVsl becomes ⁇ 1, that is, the negative maximum value. At this time, the peltier module 23 exhibits the maximum cooling capability. Further, when the temperature of the seal portion increases due to a disturbance or the like, the seal portion is promptly cooled by driving the peltier module 23 in the cooling direction, so that the seal portion may be protected.
  • the seal portion protection upper limit value is provided so as to protect the seal portion of the cooling and heating device 20 .
  • the seal portion protection upper limit value is set based on the heat transfer member temperature PV 3 which is highly involved with the temperature of the seal portion.
  • the heat transfer member temperature PV 3 which is highly involved with the temperature of the seal portion, it is possible to more reliably protect the seal portion. Further, since it is possible to more reliably detect the temperature of the seal portion, it is possible to maximally exhibit the capability of the cooling and heating device 20 by increasing the seal portion protection upper limit value when there is an allowance in the temperature of the seal portion. Further, the heat may not be easily transferred depending on the type of the fluid L (for example, sulfate or ethylene glycol). When heating the fluid L to which the heat is not easily transmitted, the heat transfer member temperature PV 3 may high even when the outlet temperature PV 1 is low.
  • the seal portion protection upper limit value based on the heat transfer member temperature PV 3 is used in addition to the module protection upper limit value based on the outlet temperature PV 1 , it is possible to more reliably protect the seal portion even when heating the fluid L to which the heat is not easily transmitted. That is, in the embodiment, it is possible to reliably protect the seal portion even when heating a plurality of types of fluids L having different heat transfer degrees.
  • the controller 11 sets an upper limit value (module protection upper limit value) MVjl of the thermal energy supplied to the fluid L based on the temperature (the outlet temperature) PV 1 of the fluid L which is adjusted by the heat transfer member 24 of the cooling and heating device 20 illustrated in FIGS. 1 and 2 .
  • the junction temperature of the peltier module 23 may be overheated even when adopting the seal portion protection upper limit value depending on the temperature or the flow rate of the fluid L.
  • the module protection upper limit value (the limit value) is defined by measuring the temperature of the junction.
  • the junction indicates the bonding portion between the peltier element and the electrode.
  • the controller 11 which receives the input of the operation amount MV sets the upper limit value (the module protection upper limit value) MVjl of the thermal energy supplied to the fluid L so as to protect the junction of the peltier module 23 illustrated in FIGS. 1 and 2 in the control block B 3 .
  • the controller 11 sets the module protection upper limit value MVjl based on the relation between the temperature (the outlet temperature) PV 1 of the fluid L and the module protection upper limit value MVjl illustrated in FIG. 5 . Then, the controller 11 compares the set module protection upper limit value MVjl with the output MVs of the control block B 2 and sets the small one as the output MVj. Accordingly, the output MVj of the control block B 3 becomes the small one between the module protection upper limit value MVjl and the output MVs of the control block B 2 .
  • the module protection upper limit value MVjl changes from 0 to 1. Further, the module protection upper limit value MVjl changes based on the temperature (the outlet temperature) PV 1 of the fluid L of which the temperature is adjusted by the cooling and heating device 20 . Accordingly, the module protection upper limit value also changes based on the outlet temperature PV 1 (after the heating in the heating) after the adjustment of the temperature by the cooling and heating device 20 .
  • the outlet temperature PV 1 is measured by the outlet temperature sensor 31 which is provided at the downstream side of the fluid outlet 21 E of the cooling and heating device 20 . The reason why the outlet temperature PV 1 is used is generally because it is difficult to directly measure the temperature of the junction. Accordingly, the temperature of the junction is estimated from the outlet temperature PV 1 .
  • the module protection upper limit value MVjl linearly and continuously decreases according to a linear function with an increase in the outlet temperature PV 1 .
  • the limitation value (the module protection upper limit value MVjl) linearly decreases, but since the limitation value is provided for the purpose of limiting the junction temperature at a predetermined temperature or less, the limitation value may partially increase or decrease the module protection upper limit value MVjl according to the allowance degree of the junction temperature (the same applies to the following description).
  • the junction temperature is set to a predetermined temperature or less so as to protect the peltier module 23 .
  • it is difficult to directly measure the temperature of the junction due to the difficulty in the attachment of the thermometer and the influence of the heater 22 .
  • the junction is largely influenced by the heater 22 , but the limitation value (the module protection upper limit value) for protecting the peltier module 23 is defined from the outlet temperature PV 1 which is involved with the junction temperature to some extent.
  • the limitation value that is, the module protection upper limit value of the operation amount of the peltier module 23 in consideration of the influence of the temperature of the heater 22 may be defined.
  • the module protection upper limit value is increased so as to exhibit the capability of the peltier module 23 as much as possible.
  • the module protection upper limit value MVjl decreases with an increase in the outlet temperature PV 1 . That is, the output MVj of the control block B 3 decreases with an increase in the outlet temperature PV 1 . Since the outlet temperature PV 1 increases with an increase in the heat generation amount of the peltier module 23 , it is possible to more reliably protect the junction by decreasing the module protection upper limit value with an increase in the outlet temperature PV 1 as described above.
  • the smallest value of the operation amount MV, the seal portion protection upper limit value MVsl, and the module protection upper limit value MVjl is set as the operation amount MVj of the heater 22 and the peltier module 23 .
  • the seal portion protection upper limit value MVsl and the module protection upper limit value MVjl are set in this order, but the order of obtaining these values may be reversed.
  • the controller 11 feed-backs the output of the control block B 3 , that is, the operation amount MVj to the PID control using the control device 2 in the control block B 1 .
  • the controller 11 feed-backs the output of the control block B 3 , that is, the operation amount MVj to the PID control using the control device 2 in the control block B 1 .
  • the operation amount MVj with the set upper limit value is fed-back to the PID control, the unnecessary integration in the PID control is stopped, thereby suppressing the overshoot or the undershoot.
  • the controller 11 divides the operation amount MV with the set upper limit value in the control block B 2 and the control block B 3 , that is, the operation amount MVj (hereinafter, referred to as MVc) as the output of the control block B 3 into an operation amount (heater operation amount) MVh of the heater 22 and an operation amount (module operation amount) MVm of the peltier module 23 (the division of the operation amount).
  • the operation amount MVj as the output of the control block B 3 corresponds to the thermal energy for heating the fluid L.
  • the thermal energy may be given from both the heater 22 and the peltier module 23 to the fluid L. As a result, it is possible to shorten a time until the temperature of the fluid L becomes the target temperature by effectively using both heating capabilities.
  • a module operation amount dividing coefficient MVmk illustrated in FIG. 6 is used. Before dividing the operation amount, the maximum and minimum operation amounts of the fluid temperature adjusting device 1 are expressed by ⁇ 1. Further, after dividing the operation amount, the maximum and minimum operation amounts of the peltier module 23 are expressed by ⁇ 1. The maximum operation amount of the heater is expressed by +1.
  • the module operation amount dividing coefficient MVmk is a coefficient which corresponds to the module operation amount MVm (corresponding to the supply amount of the peltier module 23 in the thermal energy for heating the fluid L) in the output MVc.
  • the module operation amount dividing coefficient MVmk is equal to or larger than 0 and equal to or smaller than 1.
  • the ranges of the module operation amount MVm and the heater operation amount MVh are also from 0 to 1.
  • the module operation amount MVm becomes 2 ⁇ MVc ⁇ MVmk (here, 0 ⁇ MVm ⁇ 1).
  • the heater operation amount MVh (corresponding to the supply amount of the heater 22 in the thermal energy for heating the fluid L) becomes 2 ⁇ MVc ⁇ (1 ⁇ MVmk) (here, 0 ⁇ MVc ⁇ 1).
  • the module operation amount dividing coefficient MVmk is equal to or larger than 1-1/(2 ⁇ MVc) and equal to or smaller than 1/(2 ⁇ MVc) and is equal to or larger than 0 and equal to or smaller than 1.
  • the dashed line illustrated in FIG. 6 indicates the upper and lower limits of the module operation amount dividing coefficient MVmk.
  • the range of the above-described module operation amount dividing coefficient MVmk corresponds to the case where the rated heating output of the peltier module 23 and the rated heating output of the heater 22 are equal to each other. When both outputs are different from each other, there is a need to consider the ratio between the respective heating capabilities.
  • the module operation amount dividing coefficient MVmk When the module operation amount dividing coefficient MVmk is set to the range from 1-1/(2 ⁇ MVc) to 1/(2 ⁇ MVc) and from 0 to 1, the module operation amount MVm and the heater operation amount MVh may be set to the range from 0 to 1.
  • the ratio between the module operation amount MVm and the heater operation amount MVh is also constant with respect to a change in the output MVc. That is, in the thermal energy for heating the fluid L, the ratio between the supply amount of the heater 22 and the supply amount of the peltier module 23 does not change by the magnitude of the thermal energy supplied to the fluid L.
  • the controller 11 changes the ratio between the supply amount of the heater 22 and the supply amount of the peltier module 23 in the total thermal energy for heating the fluid L based on the magnitude of the thermal energy supplied to the fluid L. For this reason, the ratio between the module operation amount MVm and the heater operation amount MVh is changed with respect to a change in the output MVc by changing the module operation amount dividing coefficient MVmk with respect to a change in the output MVc. As a result, the ratio between the supply amount of the heater 22 and the supply amount of the peltier module 23 of the thermal energy for heating the fluid L changes with a change in the magnitude of the thermal energy supplied to the fluid L.
  • the above-described ratio is a ratio between the heater 22 and the peltier module 23 with respect to the thermal energy supplied to heat the fluid L.
  • the module operation amount MVm and the heater operation amount MVh are divided by setting the module operation amount dividing coefficient MVmk in consideration of the following points (1) to (5).
  • the module operation amount MVm and the heater operation amount MVh are also monotonously increased in the above-described range so that a monotonous increase in the total thermal energy given to the fluid L is kept.
  • the total thermal energy given to the fluid L may decrease regardless of an increase in the output MVc (the operation amount).
  • the operation amount there is a concern that hunting in the temperature of the fluid L may occur.
  • the module operation amount MVm is smoothly changed. With such a configuration, it is possible to prevent an excessive change in the temperature of the junction of the peltier module 23 . As a result, when a change in the output MVc (the operation amount) is small, an abrupt change in the temperature of the peltier module 23 , and particularly, the temperature of the junction may be suppressed, and hence degradation in the durability of the peltier module 23 may be suppressed.
  • the supply amount of the peltier module 23 is made to be larger than the supply amount of the heater 22 .
  • the module operation amount MVm is made to be larger than the heater operation amount MVh.
  • the heating efficiency becomes higher than that of the heater 22 due to the peltier effect. For this reason, when the module operation amount MVm is made to be larger than the heater operation amount MVh, the heating efficiency of the fluid L is improved. As a result, the power consumption may be suppressed. Particularly, in a region where the output MVc (the operation amount) is small, a difference in the heating efficiency increases. Accordingly, in such a region, it is desirable to heat the fluid L only by the peltier module 23 .
  • the efficiency of the switching power supply is degraded in a region where the load with respect to the power supply is small. For this reason, the efficiency of the switching power supply is degraded in a region where the output MVc (the operation amount) is extremely small (for example, the module operation amount MVm is 0.2 or less).
  • the fluid L is heated only by the peltier module 23 in a region where the output MVc (the operation amount) is extremely small.
  • the region where the efficiency of the switching power supply is low may not be used as much as possible.
  • the output MVc the operation amount
  • the module operation amount MVm corresponds to 0.2 or less
  • the use of the region where the efficiency of the switching power supply is low may be suppressed only by the heating of the peltier module 23 .
  • the module operation amount MVm is made to be larger than the heater operation amount MVh, the control when heating the fluid L may be improved.
  • the heater 22 is controlled by a power control method such as a cycle control in which the output changes step-wisely, the output resolution of the peltier module 23 is smaller than that of the heater 22 , and it is possible to effectively suppress degradation in the control precision of the temperature of the fluid L due to the heating of the heater 22 having a low output resolution.
  • the supply amount of the heater 22 is made to be larger than the supply amount of the peltier module 23 .
  • the heater operation amount MVh is made to be larger than the module operation amount MVm.
  • a state where the thermal energy supplied from the peltier module 23 to the fluid L is larger than the thermal energy supplied from the heater 22 to the fluid L changes to a state where the thermal energy supplied from the heater 22 to the fluid L is larger than the thermal energy supplied from the peltier module 23 to the fluid L. That is, the maximum heating capability of the heater 22 becomes larger than the maximum heating capability of the peltier module 23 with an increase in the total thermal energy supplied to the fluid L.
  • the small and large degrees of the thermal energy supplied from the heater 22 to the fluid L and the thermal energy supplied from the peltier module 23 to the fluid L are switched. That is, the small and large degrees of the operation amount of the heater 22 and the operation amount of the peltier module 23 are switched.
  • the load on the peltier module 23 may be reduced by further sharing the energy using the heater 22 in the total thermal energy supplied to the fluid L.
  • the load on the peltier module 23 may be reduced by further sharing the energy using the heater 22 in the total thermal energy supplied to the fluid L.
  • the module operation amount dividing coefficient MVmk is continuously changed.
  • the module operation amount MVm and the heater operation amount MVh may be continuously changed.
  • the thermal energy supplied from the peltier module 23 to the fluid L and the thermal energy supplied from the heater 22 to the fluid L smoothly change.
  • an abrupt change in the temperature of the fluid L is suppressed even when the module operation amount MVm and the heater operation amount MVh are changed, it is possible to decrease an influence on the quality of the semiconductor wafer W which is cleaned by the fluid L.
  • FIG. 6 illustrates an example in which the module operation amount dividing coefficient MVmk is set according to (1) to (4).
  • the module operation amount MVm is larger than 0, and the heater operation amount MVh becomes 0.
  • the fluid L is heated only by the peltier module 23 .
  • the module operation amount dividing coefficient MVmk monotonously decreases.
  • the module operation amount MVm and the heater operation amount MVh both become larger than 0.
  • the fluid L is heated by both the heater 22 and the peltier module 23 .
  • the module operation amount dividing coefficient MVmk becomes 0.5.
  • the module operation amount MVm and the heater operation amount MVh both become 0.5.
  • the fluid L is heated by both the heater 22 and the peltier module 23 , and the thermal energies given to the fluid L therefrom become equal to each other.
  • the module operation amount dividing coefficient MVmk monotonously increases and becomes 0.5 when the output MVc (the operation amount) is 1.
  • the module operation amount MVm and the heater operation amount MVh monotonously increase, but the increase rate of the heater operation amount MVh becomes smaller in a region where MVmk is smaller than 0.8.
  • the controller 11 may change the respectively supplied thermal energies while keeping the ratio between the ratio (the operation amount) of the heating output with respect to the maximum heating capability of the peltier module 23 and the ratio (the operation amount) of the heating output with respect to the maximum heating capability of the heater 22 .
  • the controller 11 may switch the operation amount of the peltier module 23 and the operation amount of the heater 22 , and may control the cooling and heating device 20 so that a state where the thermal energy supplied from the peltier module 23 to the fluid L is larger than the thermal energy supplied from the heater 22 to the fluid L becomes a state where the thermal energy supplied from the heater 22 to the fluid L is larger than the thermal energy supplied from the peltier module 23 to the fluid L with an increase in the total thermal energy supplied to the fluid L.
  • the controller 11 may switch the operation amount of the peltier module 23 and the operation amount of the heater 22 , and may control the cooling and heating device 20 so that a state where the thermal energy supplied from the peltier module 23 to the fluid L is larger than the thermal energy supplied from the heater 22 to the fluid L becomes a state where the thermal energy supplied from the heater 22 to the fluid L is larger than the thermal energy supplied from the peltier module 23 to the fluid L with an increase in the total thermal energy supplied to the fluid L.
  • the controller 11 adjusts the temperature of the fluid L to the target temperature when the operation amount in the control block B 1 is defined, the operation may be easily performed. As a result, the fluid temperature adjusting device 1 does not easily cause a problem due to an erroneous operation, and there is an extremely low possibility that the cleaning failure of the semiconductor wafer W may occur.
  • the description above corresponds to a case where the heating capabilities of the peltier module 23 and the heater 22 are equal to each other. When the heating capabilities of the peltier module 23 and the heater 22 are different from each other, the ratio between each supply heating capability with respect to each maximum heating capability may be used.
  • the controller 11 sets the module operation amount MVm and the heater operation amount MVh by dividing the output MVc into the operation amounts based on the module operation amount dividing coefficient MVmk. Subsequently, the controller 11 performs a cycle control or a duty control of the power supplied to the heater 22 based on the heater operation amount MVh. It is possible to easily control the heating amount of the heater 22 by performing a cycle control or a duty control on the power supplied to the heater 22 .
  • the cycle control is a method of controlling the power supplied to the heater 22 by turning on or off an AC power supply by the unit of a half wave or a cycle of the AC power supply.
  • the duty control is a method of controlling the power supplied to the heater 22 by changing the time in which the AC power supply is turned on for a predetermined time (for example, one second). Since the cycle control or the duty control may control the power supplied to the heater 22 with high precision compared to the simple ON and OFF control, the heating amount of the heater 22 may be controlled with high precision.
  • a fluid temperature adjusting device including a peltier module and a heater.

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  • General Engineering & Computer Science (AREA)
  • Resistance Heating (AREA)
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130152604A1 (en) * 2011-12-20 2013-06-20 Kelk Ltd. Fluid temperature adjusting device
US20160305688A1 (en) * 2015-04-16 2016-10-20 Tokyo Electron Limited Substrate liquid processing apparatus, and control method of heater unit
US20170242048A1 (en) * 2016-02-19 2017-08-24 Agjunction Llc Thermal stabilization of inertial measurement units
US20190072307A1 (en) * 2017-07-31 2019-03-07 Qingdao Hisense Hitachi Air-Conditioning Systems C O., Ltd. Air Conditioner And Method For Controlling The Same
CN110520965A (zh) * 2017-04-06 2019-11-29 东京毅力科创株式会社 供液装置和供液方法
CN111757564A (zh) * 2019-03-26 2020-10-09 临沂华庚新材料科技有限公司 加热设备
US11359968B2 (en) * 2018-10-15 2022-06-14 Jongpal AHN Apparatus and method for adjusting installation location of temperature sensor configured to measure surface temperature of wafer in semiconductor wafer cleaning apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6795842B2 (ja) * 2017-01-10 2020-12-02 キーナスデザイン株式会社 温調装置
JP7478034B2 (ja) * 2020-06-10 2024-05-02 ヤンマーホールディングス株式会社 冷却装置およびそれを備えた処理システム

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030217559A1 (en) * 2002-05-22 2003-11-27 Hisashi Ieda Vehicle power supply control apparatus
US6725669B2 (en) * 2000-12-19 2004-04-27 Nortel Networks Limited Thermoelectric cooler temperature control
US6825681B2 (en) * 2002-07-19 2004-11-30 Delta Design, Inc. Thermal control of a DUT using a thermal control substrate
US20080264464A1 (en) * 2007-01-11 2008-10-30 Nextreme Thermal Solutions, Inc. Temperature Control Including Integrated Thermoelectric Sensing and Heat Pumping Devices and Related Methods and Systems
US20090107978A1 (en) * 2006-03-09 2009-04-30 Hitachi Kokusai Electric Inc. Temperature Adjustment Method
US20090229274A1 (en) * 2008-03-13 2009-09-17 Andre Boulay Thermoelectric retrofit unit for a liquid recipient
WO2011089726A1 (ja) * 2010-01-25 2011-07-28 トヨタ自動車株式会社 電気駆動式車両
US20130152604A1 (en) * 2011-12-20 2013-06-20 Kelk Ltd. Fluid temperature adjusting device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234048B2 (ja) * 1981-10-09 1990-08-01 Sekonitsuku Kk Ekitaiyokinoondoseigyosochi
JP2007085709A (ja) * 2005-09-26 2007-04-05 Orion Mach Co Ltd 液体温調装置の制御方法
JP4977912B2 (ja) * 2007-02-16 2012-07-18 株式会社Ｋｅｌｋ 流体温調装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6725669B2 (en) * 2000-12-19 2004-04-27 Nortel Networks Limited Thermoelectric cooler temperature control
US20030217559A1 (en) * 2002-05-22 2003-11-27 Hisashi Ieda Vehicle power supply control apparatus
US6825681B2 (en) * 2002-07-19 2004-11-30 Delta Design, Inc. Thermal control of a DUT using a thermal control substrate
US20090107978A1 (en) * 2006-03-09 2009-04-30 Hitachi Kokusai Electric Inc. Temperature Adjustment Method
US20080264464A1 (en) * 2007-01-11 2008-10-30 Nextreme Thermal Solutions, Inc. Temperature Control Including Integrated Thermoelectric Sensing and Heat Pumping Devices and Related Methods and Systems
US20090229274A1 (en) * 2008-03-13 2009-09-17 Andre Boulay Thermoelectric retrofit unit for a liquid recipient
WO2011089726A1 (ja) * 2010-01-25 2011-07-28 トヨタ自動車株式会社 電気駆動式車両
US20120324934A1 (en) * 2010-01-25 2012-12-27 Toyota Jidosha Kabushiki Kaisha Electrically driven vehicle
US20130152604A1 (en) * 2011-12-20 2013-06-20 Kelk Ltd. Fluid temperature adjusting device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130152604A1 (en) * 2011-12-20 2013-06-20 Kelk Ltd. Fluid temperature adjusting device
US20160305688A1 (en) * 2015-04-16 2016-10-20 Tokyo Electron Limited Substrate liquid processing apparatus, and control method of heater unit
US10422551B2 (en) * 2015-04-16 2019-09-24 Tokyo Electron Limited Substrate liquid processing apparatus, and control method of heater unit
US20170242048A1 (en) * 2016-02-19 2017-08-24 Agjunction Llc Thermal stabilization of inertial measurement units
US10845375B2 (en) * 2016-02-19 2020-11-24 Agjunction Llc Thermal stabilization of inertial measurement units
CN110520965A (zh) * 2017-04-06 2019-11-29 东京毅力科创株式会社 供液装置和供液方法
US11626298B2 (en) * 2017-04-06 2023-04-11 Tokyo Electron Limited Liquid supply device and liquid supply method
US20190072307A1 (en) * 2017-07-31 2019-03-07 Qingdao Hisense Hitachi Air-Conditioning Systems C O., Ltd. Air Conditioner And Method For Controlling The Same
US10816250B2 (en) * 2017-07-31 2020-10-27 Qingdao Hisense Hitachi Air-conditioning Systems Co., Ltd. Air conditioner and method for controlling the same
US11359968B2 (en) * 2018-10-15 2022-06-14 Jongpal AHN Apparatus and method for adjusting installation location of temperature sensor configured to measure surface temperature of wafer in semiconductor wafer cleaning apparatus
CN111757564A (zh) * 2019-03-26 2020-10-09 临沂华庚新材料科技有限公司 加热设备

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