US20130048252A1 - Vapor chamber structure and method of manufacturing same - Google Patents

Vapor chamber structure and method of manufacturing same Download PDF

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Publication number
US20130048252A1
US20130048252A1 US13/274,358 US201113274358A US2013048252A1 US 20130048252 A1 US20130048252 A1 US 20130048252A1 US 201113274358 A US201113274358 A US 201113274358A US 2013048252 A1 US2013048252 A1 US 2013048252A1
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US
United States
Prior art keywords
vapor chamber
ceramic plate
metal plate
chamber
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/274,358
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English (en)
Inventor
Hsiu-Wei Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asia Vital Components Co Ltd
Original Assignee
Asia Vital Components Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asia Vital Components Co Ltd filed Critical Asia Vital Components Co Ltd
Assigned to ASIA VITAL COMPONENTS CO., LTD. reassignment ASIA VITAL COMPONENTS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YANG, HSIU-WEI
Publication of US20130048252A1 publication Critical patent/US20130048252A1/en
Priority to US16/403,598 priority Critical patent/US20190271510A1/en
Priority to US16/403,597 priority patent/US11765861B2/en
Abandoned legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/04—Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramic; of concrete; of natural stone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

Definitions

  • the present invention relates to a vapor chamber structure, and more particularly to a vapor chamber structure formed of a metal plate and a ceramic plate to overcome the problem of crack at an interface between a vapor chamber and a heat source due to thermal fatigue.
  • the present invention also relates to a method of manufacturing the above described vapor chamber structure.
  • the progress in semiconductor technology enables various integrated circuits (ICs) to have a gradually reduced volume.
  • the number of computing elements provided on the presently available ICs is several times higher than that on the conventional ICs of the same volume.
  • the heat generated by the computing elements during the operation thereof also increases.
  • the heat generated by a central processing unit (CPU) at full-load condition is high enough to burn out the whole CPU.
  • CPU central processing unit
  • the CPU and other chips are heat sources in the electronic device. When the electronic device operates, these heat sources will generate heat.
  • the CPU and other chips are mainly encapsulated with a ceramic material.
  • the ceramic material has a low thermal expansion coefficient close to that of chips used in general electronic devices and is electrically non-conductive, and is therefore widely employed as packaging material and semiconductor material.
  • a heat dissipation device usually includes a heat dissipating structure made of an aluminum material or a copper material, and is often used along with other heat dissipation elements, such as fans and heat pipes, in order to provide enhanced heat dissipation effect.
  • heat dissipation structure made of an aluminum material or a copper material
  • other heat dissipation elements such as fans and heat pipes
  • the use of a heat dissipation structure with cooling fans and heat pipes would usually have adverse influence on the overall reliability of the electronic device.
  • a heat dissipation device with simpler structural design would be better to the overall reliability of the electronic device.
  • the heat transfer efficiency of the electronic device can be directly improved when the heat dissipation device used therewith uses a material having better heat transferring and radiating ability than copper.
  • heat stress is another potential factor having adverse influence on the reliability of the electronic device in contact with the heat dissipation device.
  • the heat source such as the chip in the CPU, has a relatively low thermal expansion coefficient.
  • the electronic device manufacturers would usually use a ceramic material with low thermal expansion coefficient, such as aluminum nitride (AlN) or silicon carbide (SiC), to package the chip.
  • heat dissipation for example, aluminum and copper materials forming the heat dissipation device have thermal expansion coefficients much higher than that of an LED sapphire chip and the ceramic packaging material thereof.
  • an interface between the aluminum or copper material of the heat dissipation device and the ceramic packaging material of the LED sapphire chip tends to crack due to thermal fatigue caused by the difference in the thermal expansion coefficients thereof when the LED has been used over a long period of time.
  • the interface crack in turn causes a rising thermal resistance at the interface.
  • the rising thermal resistance at the heat dissipation interface would result in heat accumulation to cause burnout of the LED chip and bring permanent damage to the LED.
  • a primary object of the present invention is to provide a vapor chamber structure that overcomes the problem of crack at an interface between the vapor chamber and a heat source due to thermal fatigue.
  • Another object of the present invention is to provide a method of manufacturing a vapor chamber structure that can overcome the problem of crack at an interface between the vapor chamber and a heat source due to thermal fatigue.
  • the vapor chamber structure includes a main body formed of a metal plate and a ceramic plate.
  • the metal plate and the ceramic plate are correspondingly closed to each other to thereby together define a chamber therebetween.
  • the chamber is internally provided with a wick structure, a support structure, and a working fluid.
  • the wick structure is located on inner wall surfaces of the chamber, and the support structure is connected to between the metal plate and the ceramic plate.
  • the wick structure is selected from the group consisting of a sintered powder structure, a netlike structure, and a plurality of grooves.
  • the ceramic plate is made of a material selected from the group consisting of silicon nitride (Si 3 N 4 ), zirconium nitride (ZrO 2 ), and aluminum oxide (Al 2 O 3 ).
  • the support structure includes a plurality of copper posts.
  • the support structure is connected to the ceramic plate in a manner selected from the group consisting of soldering, brazing, diffusion bonding, ultrasonic welding, and direct bonding copper (DBC) process.
  • the vapor chamber structure manufacturing method according to the present invention includes the following steps:
  • the metal plate and the ceramic plate are connected to each other by way of soldering, brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
  • soldering brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
  • a ceramic plate is applied in the vapor chamber structure to connect to a metal plate, and it is the ceramic plate of the vapor chamber that is in contact with a heat source packaged in a ceramic material. Since the ceramic plate of the vapor chamber structure and the ceramic packaging material of the heat source are close in their thermal expansion coefficients, it is able to avoid the problem of crack at an interface between the vapor chamber and the heat source due to thermal fatigue caused by different thermal expansion coefficients of the vapor chamber and the heat source.
  • FIG. 1 a is an exploded perspective view of a vapor chamber structure according to a first embodiment of the present invention
  • FIG. 1 b is an assembled view of FIG. 1 a;
  • FIG. 2 is a cross sectional view of the vapor chamber structure according to the first embodiment of the present invention.
  • FIG. 3 is a cross sectional view of a vapor chamber structure according to a second embodiment of the present invention.
  • FIG. 4 is a cross sectional view of a vapor chamber structure according to a third embodiment of the present invention.
  • FIG. 5 is a flowchart showing the steps included in a method of manufacturing vapor chamber structure according to the present invention.
  • FIGS. 1 a and 1 b are exploded and assembled perspective views, respectively, of a vapor chamber structure according to a first embodiment of the present invention; and to FIG. 2 that is a cross sectional of the vapor chamber structure of FIG. 1 b.
  • the vapor chamber structure in the first embodiment includes a main body 1 .
  • the main body 1 is formed of a metal plate 11 and a ceramic plate 12 , which are correspondingly closed to each other to thereby together define a chamber 13 therebetween.
  • the chamber 13 is internally provided with a wick structure 14 and a support structure 15 .
  • the wick structure 14 is located on inner walls of the chamber 13
  • the support structure 15 is located between and connected to the metal plate 11 and the ceramic plate 12 .
  • a working fluid 16 is filled into the chamber 13 .
  • the wick structure 14 includes, but not limited to, a sintered powder structure.
  • the ceramic plate 12 can be made of silicon nitride (Si 3 N 4 ), zirconium nitride (ZrO 2 ), or aluminum oxide (Al 2 O 3 ).
  • the support structure 15 includes a plurality of copper posts that are connected to the ceramic plate 12 by way of soldering, brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
  • the metal plate 11 is made of a copper material, an aluminum material, a stainless steel material, or any other metal material with good heat radiating and thermal conducting properties.
  • FIG. 3 is a cross sectional view of a vapor chamber structure according to a second embodiment of the present invention.
  • the second embodiment is generally structurally similar to the first embodiment, except that the wick structure 14 in the second embodiment includes but not limited to a netlike structure.
  • FIG. 4 is a cross sectional view of a vapor chamber structure according to a third embodiment of the present invention. As shown, the third embodiment is generally structurally similar to the first embodiment, except that the wick structure 14 in the third embodiment includes but not limited to a plurality of grooves.
  • FIG. 5 is a flowchart showing the steps included in a method of manufacturing vapor chamber structure according to an embodiment of the present invention. Please refer to FIG. 5 along with FIGS. 1 to 4 .
  • the vapor chamber structure manufacturing method according to the present invention includes the following steps S 1 , S 2 and S 3 .
  • step S 1 a metal plate and a ceramic plate are provided.
  • the metal plate 11 is made of a metal material selected from the group consisting of a copper material, an aluminum material, a stainless steel material, and any other metal material with good heat radiating and thermal conducting properties.
  • the present invention is explained with the metal plate 11 being made of a copper material but not intended to be limited thereto.
  • the ceramic plate 12 is made of a material selected from the group consisting of silicon nitride (Si 3 N 4 ), zirconium nitride (ZrO 2 ), and aluminum oxide (Al 2 O 3 ).
  • the present invention is explained with the ceramic plate 12 being made of aluminum oxide (Al 2 O 3 ) but not intended to be limited thereto.
  • a wick structure and a support structure are provided on faces of the metal plate and the ceramic plate that are to be faced toward each other later.
  • the metal plate 11 and the ceramic plate 12 are provided on respective one face that are to be faced toward each other with a wick structure 14 and a support structure 15 .
  • the wick structure 14 can include a sintered powder structure, a netlike structure, or a plurality of grooves.
  • a type of powder can be sintered to thereby become molded on the metal plate 11 and the ceramic plate 12 .
  • the netlike structure 14 in the form of a netlike structure can be connected to the ceramic plate 12 and the metal plate 11 by soldering, brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
  • soldering brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
  • the metal plate 11 and the ceramic plate 12 are subjected to a mechanical process, such as milling, planing, laser cutting or etching, to form a plurality of grooves thereon.
  • the support structure can include a plurality of copper posts, which can be first connected to either the ceramic plate 12 or the metal plate 11 by soldering, brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
  • soldering brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
  • the metal plate and the ceramic plate are correspondingly closed to each other to define a chamber therebetween, the chamber is evacuated, a working fluid is filled into the evacuated chamber, and a joint between the metal plate and the ceramic plate is sealed.
  • the metal plate 11 and the ceramic plate 12 are correspondingly closed and fixedly connected to each other by soldering, brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process, so that a chamber is defined between the metal plate 11 and ceramic plate 12 .
  • the chamber is evacuated and then filled with a working fluid 16 .
  • a joint between the connected metal plate 11 and ceramic plate 12 is sealed to complete a vapor chamber.
  • the present invention is characterized in that the ceramic plate 12 is used as one of two sides of the vapor chamber for contacting with a heat source to transfer heat. That is, one of two metal sides of the conventional vapor chamber is replaced by the ceramic plate 12 in the present invention. Since the ceramic plate 12 has a thermal expansion coefficient close to that of the ceramic packaging material of the heat source in an electronic device, it is able to avoid the problem of crack at an interface between the vapor chamber and the heat source due to thermal fatigue caused by different thermal expansion coefficients of the vapor chamber and the heat source. With one of two sides of the vapor chamber being made of a ceramic material, the vapor chamber as a heat dissipation device can be applied to more different fields.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
US13/274,358 2011-08-29 2011-10-17 Vapor chamber structure and method of manufacturing same Abandoned US20130048252A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/403,598 US20190271510A1 (en) 2011-10-17 2019-05-05 Manufacturing method of vapor chamber
US16/403,597 US11765861B2 (en) 2011-10-17 2019-05-05 Vapor chamber structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW100130954 2011-08-29
TW100130954A TWI465678B (zh) 2011-08-29 2011-08-29 均溫板結構及其製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US16/403,598 Continuation-In-Part US20190271510A1 (en) 2011-10-17 2019-05-05 Manufacturing method of vapor chamber
US16/403,597 Continuation-In-Part US11765861B2 (en) 2011-10-17 2019-05-05 Vapor chamber structure

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US20130048252A1 true US20130048252A1 (en) 2013-02-28

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150311095A1 (en) * 2014-04-24 2015-10-29 Towa Corporation Method for producing resin-encapsulated electronic component, bump-formed plate-like member, resin-encapsulated electronic component, and method for producing bump-formed plate-like member
US20180111220A1 (en) * 2015-08-20 2018-04-26 Ultex Corporation Bonding method and bonded structure
US20190113290A1 (en) * 2017-10-12 2019-04-18 Tai-Sol Electronics Co., Ltd. Vapor chamber with inner ridge forming passage
US20190204019A1 (en) * 2018-01-03 2019-07-04 Asia Vital Components (China) Co., Ltd. Heat dissipation device
CN111761050A (zh) * 2019-04-01 2020-10-13 广州力及热管理科技有限公司 以金属浆料制作毛细结构的方法
USD909979S1 (en) * 2017-11-28 2021-02-09 Tai-Sol Electronics Co., Ltd. Vapor chamber
US10923411B2 (en) * 2016-05-09 2021-02-16 Avary Holding (Shenzhen) Co., Limited. Method for manufacturing an ultrathin heat dissipation structure
CN114230361A (zh) * 2022-01-10 2022-03-25 江苏耀鸿电子有限公司 一种氮化硅陶瓷覆铜基板及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10788869B2 (en) 2013-12-11 2020-09-29 Asia Vital Components Co., Ltd. Heat-conducting case unit for handheld electronic device
US10602642B2 (en) 2013-12-11 2020-03-24 Asia Vital Components Co., Ltd. Back cover unit applied to portable device and having heat conduction function
CN111660025B (zh) * 2019-12-27 2024-09-17 东莞市万维热传导技术有限公司 一种多腔式均温板的封口焊接方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20070295486A1 (en) * 2006-04-21 2007-12-27 Taiwan Microloops Corp. Heat spreader with composite micro-structure
US20090025910A1 (en) * 2007-07-27 2009-01-29 Paul Hoffman Vapor chamber structure with improved wick and method for manufacturing the same
US20100078151A1 (en) * 2008-09-30 2010-04-01 Osram Sylvania Inc. Ceramic heat pipe with porous ceramic wick

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5178274B2 (ja) * 2008-03-26 2013-04-10 日本モレックス株式会社 ヒートパイプ、ヒートパイプの製造方法およびヒートパイプ機能付き回路基板
TW201041496A (en) * 2009-05-15 2010-11-16 High Conduction Scient Co Ltd A manufacturing method of circuit board module equipped with heat sink, and its product
TWM376120U (en) * 2009-08-26 2010-03-11 Asia Vital Components Co Ltd Improved supporting structure for flat plate type heat piper

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070295486A1 (en) * 2006-04-21 2007-12-27 Taiwan Microloops Corp. Heat spreader with composite micro-structure
US20090025910A1 (en) * 2007-07-27 2009-01-29 Paul Hoffman Vapor chamber structure with improved wick and method for manufacturing the same
US20100078151A1 (en) * 2008-09-30 2010-04-01 Osram Sylvania Inc. Ceramic heat pipe with porous ceramic wick

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150311095A1 (en) * 2014-04-24 2015-10-29 Towa Corporation Method for producing resin-encapsulated electronic component, bump-formed plate-like member, resin-encapsulated electronic component, and method for producing bump-formed plate-like member
US9728426B2 (en) * 2014-04-24 2017-08-08 Towa Corporation Method for producing resin-encapsulated electronic component, bump-formed plate-like member, resin-encapsulated electronic component, and method for producing bump-formed plate-like member
US20180111220A1 (en) * 2015-08-20 2018-04-26 Ultex Corporation Bonding method and bonded structure
US10923411B2 (en) * 2016-05-09 2021-02-16 Avary Holding (Shenzhen) Co., Limited. Method for manufacturing an ultrathin heat dissipation structure
US20190113290A1 (en) * 2017-10-12 2019-04-18 Tai-Sol Electronics Co., Ltd. Vapor chamber with inner ridge forming passage
USD909979S1 (en) * 2017-11-28 2021-02-09 Tai-Sol Electronics Co., Ltd. Vapor chamber
US20190204019A1 (en) * 2018-01-03 2019-07-04 Asia Vital Components (China) Co., Ltd. Heat dissipation device
CN111761050A (zh) * 2019-04-01 2020-10-13 广州力及热管理科技有限公司 以金属浆料制作毛细结构的方法
CN114230361A (zh) * 2022-01-10 2022-03-25 江苏耀鸿电子有限公司 一种氮化硅陶瓷覆铜基板及其制备方法

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Publication number Publication date
TW201309991A (zh) 2013-03-01
TWI465678B (zh) 2014-12-21

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