US20100319897A1 - High-performance heat dissipation substrate with monoparticle layer - Google Patents

High-performance heat dissipation substrate with monoparticle layer Download PDF

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Publication number
US20100319897A1
US20100319897A1 US12/588,817 US58881709A US2010319897A1 US 20100319897 A1 US20100319897 A1 US 20100319897A1 US 58881709 A US58881709 A US 58881709A US 2010319897 A1 US2010319897 A1 US 2010319897A1
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heat dissipation
dissipation substrate
thermal
layer
surface plate
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US12/588,817
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Shih-Yao Huang
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738—Semiconductor materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0028—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for cooling heat generating elements, e.g. for cooling electronic components or electric devices
    • F28D2021/0029—Heat sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F2013/005—Thermal joints
    • F28F2013/006—Heat conductive materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/02—Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/04—Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramic; of concrete; of natural stone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a high-performance heat dissipation substrate with monoparticle layer, and more particularly to a heat dissipation substrate with higher heat conduction efficiency and wider application range.
  • a mini-type high-power semiconductor such as high-power light-emitting diode (LED), high-frequency component, high-power transistor component, etc.
  • LED high-power light-emitting diode
  • high-power transistor component etc.
  • an external heat dissipation component or radiating fins
  • the heat is multistage conducted from the semiconductor to the external heat dissipation component. Therefore, heat conduction efficiency of the mini-type semiconductor (small-size electronic component) is a critical factor in heat dissipation as a whole.
  • a heat conduction layer is disposed between the semiconductor and the packaging substrate thereof.
  • the heat conduction layer is made of an adhesive material simply formed of resin or resin doped with ceramic micropowder.
  • Such heat conduction layer has a very poor thermal conductivity (lower than 5 W/m ⁇ k). As a result, the heat dissipation effect provided by such heat conduction layer is limited and it often takes place that the heat cannot be dissipated efficiently.
  • diamond particle itself has excellent thermal conductivity (1000 W/m ⁇ k). Therefore, some manufacturers apply diamond material to heat conduction structures of semiconductor products. It is commonly seen that diamond particles are ground into diamond micropowder, which is added into resin or other adhesives as heat conduction material between the semiconductor heat source and the heat conduction substrate. However, in such structure, the diamond micropowder is enclosed in the resin material with very poor thermal conductivity. This greatly deteriorates heat conduction effect of the diamond micropowder. Consequently, such structure can hardly achieve satisfying heat dissipation function. Moreover, the diamond particles have an extremely high hardness and are hard to grind. Therefore, it is difficult to grind and process the diamond particles into diamond microparticle. As a result, the manufacturing cost is increased. This is inconsistent with economic benefit.
  • U.S. Pat. No. 6,372,628 discloses an insulating diamond-like carbon film disposed between a heat source and a heat conduction substrate.
  • Taiwanese Patent Publication No. 200915505 discloses a high-performance heat dissipation packaging substrate with an insulating diamond-like carbon film.
  • the insulating diamond-like carbon film serves to transfer the heat generated by the heat source (semiconductor) to the heat conduction substrate for dissipating the heat outward.
  • Such diamond-like carbon film has a thermal conductivity better than that of the conventional adhesive heat conduction layer formed of resin or resin doped with ceramic micropowder.
  • the thermal conductivity of the diamond-like carbon film is lower than the thermal conductivity of diamond particles. Therefore, such diamond-like carbon film still can hardly achieve satisfying heat dissipation effect.
  • the heat dissipation substrate has excellent thermal conductivity and is able to efficiently transfer heat generated by a heat source to a heat dissipation device for dissipating the heat outward.
  • the high-performance heat dissipation substrate with monoparticle layer of the present invention includes: a surface plate at least having a first face and a second face, the first face of the surface plate being connected to a heat source; a heat dissipation substrate disposed on the second face of the surface plate and connected to an external heat dissipation device; and a thermal particle layer including multiple thermal particles (such as particles formed with ceramic material) arranged between the surface plate and the heat dissipation substrate for transferring heat from the surface plate to the heat dissipation substrate.
  • the thermal particles of the thermal particle layer are arranged in an array or a non-array.
  • an adhesive bonding material is filled between the thermal particles of the thermal particle layer.
  • FIG. 1 is a perspective exploded view of the present invention
  • FIG. 2 is a sectional assembled view of the present invention.
  • FIG. 3 is an enlarged view of a part of the present invention.
  • the present invention includes a surface plate 1 , a heat dissipation substrate 2 and a thermal particle layer 3 .
  • the surface plate 1 is a sheet member having a first face and a second face.
  • the first face of the surface plate 1 is connected to a heat source 4 (such as a semiconductor or a heat-generating component).
  • the heat dissipation substrate 2 is disposed on the second face of the surface plate 1 .
  • the heat dissipation substrate 2 has larger heat dissipation area itself.
  • the heat dissipation substrate 2 is connected to an external heat dissipation device (such as radiating fins or the like).
  • the thermal particle layer 3 is disposed between the surface plate 1 and the heat dissipation substrate 2 in the form of a monoparticle layer.
  • the thermal particle layer 3 includes multiple thermal particles 31 (such as particles formed with ceramic material diamond, SiC, AIN, Single Crystal Silicon) arranged immediately adjacent to each other (in an array or non-array).
  • the thermal particles 31 are partially inlaid in the surface plate 1 or the heat dissipation substrate 2 so as to firmly and tightly connect and contact therewith by a large area. Accordingly, the heat can be efficiently transferred from the surface plate 1 through the thermal particle layer 3 to the heat dissipation substrate 2 .
  • An adhesive bonding material 32 is filled between the thermal particles 31 of the thermal particle layer 3 .
  • the main composition of the bonding material 32 is pure epoxy or epoxy added with SiC powder.
  • the bonding material 32 not only serves to bond the thermal particles 31 to each other, but also is able to enhance connection strength between the surface plate 1 and the heat dissipation substrate 2 .
  • the thermal particles 31 have an excellent thermal conductivity themselves and are extremely hard. Therefore, in the case that the surface plate 1 and the heat dissipation substrate 2 are pressed toward each other, at least some parts of the thermal particles 31 , especially the sharp sections thereof, will thrust into the surface of the surface plate 1 or the heat dissipation substrate 2 , which is generally made of metal material. Accordingly, the thermal particles 31 can firmly and tightly connect and contact with the surface plate 1 and the heat dissipation substrate 2 by larger area to reduce thermal resistance between the contact sections. Therefore, the heat generated by the heat source 4 can be uniformly distributed over the surface plate 1 and efficiently transferred through the thermal particles 31 of the thermal particle layer 3 to the heat dissipation substrate 2 .
  • the heat dissipation substrate 2 then conducts the heat to the radiating fins or the like heat dissipation structures to dissipate the heat.
  • the present invention achieves better heat dissipation effect and is easier to process. Therefore, the manufacturing cost is reduced and the competitive ability is promoted.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A high-performance heat dissipation substrate with monoparticle layer, including a surface plate having a first face connected to a heat source and a second face on which a heat dissipation substrate is disposed. The heat dissipation substrate is connectable to an external heat dissipation device. A thermal particle layer is disposed between the surface plate and the heat dissipation substrate in the form of a monoparticle layer. The thermal particle layer includes multiple thermal particles (ceramic materials as diamond, SiC, AIN, Single Crystal Silicon) arranged immediately adjacent to each other and partially inlaid in the surface plate and the heat dissipation substrate. The heat of the heat source can be transferred from the surface plate through the thermal particle layer to the heat dissipation substrate and dissipated outward.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to a high-performance heat dissipation substrate with monoparticle layer, and more particularly to a heat dissipation substrate with higher heat conduction efficiency and wider application range.
  • Following the development and advance of semiconductor technique, it has become a trend to miniaturize and sophisticate various semiconductor products. The semiconductor will generate heat when working. However, the semiconductor itself inherently has quite small heat dissipation surface. Therefore, a mini-type high-power semiconductor, such as high-power light-emitting diode (LED), high-frequency component, high-power transistor component, etc., is generally provided with an external heat dissipation component (or radiating fins) with sufficient heat dissipation area for dissipating the heat. The heat is multistage conducted from the semiconductor to the external heat dissipation component. Therefore, heat conduction efficiency of the mini-type semiconductor (small-size electronic component) is a critical factor in heat dissipation as a whole.
  • Conventionally, a heat conduction layer is disposed between the semiconductor and the packaging substrate thereof. In early stage, the heat conduction layer is made of an adhesive material simply formed of resin or resin doped with ceramic micropowder. Such heat conduction layer has a very poor thermal conductivity (lower than 5 W/m·k). As a result, the heat dissipation effect provided by such heat conduction layer is limited and it often takes place that the heat cannot be dissipated efficiently.
  • It is known that diamond particle itself has excellent thermal conductivity (1000 W/m·k). Therefore, some manufacturers apply diamond material to heat conduction structures of semiconductor products. It is commonly seen that diamond particles are ground into diamond micropowder, which is added into resin or other adhesives as heat conduction material between the semiconductor heat source and the heat conduction substrate. However, in such structure, the diamond micropowder is enclosed in the resin material with very poor thermal conductivity. This greatly deteriorates heat conduction effect of the diamond micropowder. Consequently, such structure can hardly achieve satisfying heat dissipation function. Moreover, the diamond particles have an extremely high hardness and are hard to grind. Therefore, it is difficult to grind and process the diamond particles into diamond microparticle. As a result, the manufacturing cost is increased. This is inconsistent with economic benefit.
  • U.S. Pat. No. 6,372,628 discloses an insulating diamond-like carbon film disposed between a heat source and a heat conduction substrate. Also, Taiwanese Patent Publication No. 200915505 discloses a high-performance heat dissipation packaging substrate with an insulating diamond-like carbon film. The insulating diamond-like carbon film serves to transfer the heat generated by the heat source (semiconductor) to the heat conduction substrate for dissipating the heat outward. Such diamond-like carbon film has a thermal conductivity better than that of the conventional adhesive heat conduction layer formed of resin or resin doped with ceramic micropowder. However, in practice, the thermal conductivity of the diamond-like carbon film is lower than the thermal conductivity of diamond particles. Therefore, such diamond-like carbon film still can hardly achieve satisfying heat dissipation effect.
    • SUMMARY OF THE INVENTION
  • It is therefore a primary object of the present invention to provide a high-performance heat dissipation substrate with monoparticle layer formed with ceramic materials. The heat dissipation substrate has excellent thermal conductivity and is able to efficiently transfer heat generated by a heat source to a heat dissipation device for dissipating the heat outward.
  • It is a further object of the present invention to provide the above high-performance heat dissipation substrate, which can be more easily processed than the conventional heat conduction structure made of the same material. Therefore, the manufacturing cost is lowered and the competitive ability is promoted.
  • To achieve the above and other objects, the high-performance heat dissipation substrate with monoparticle layer of the present invention includes: a surface plate at least having a first face and a second face, the first face of the surface plate being connected to a heat source; a heat dissipation substrate disposed on the second face of the surface plate and connected to an external heat dissipation device; and a thermal particle layer including multiple thermal particles (such as particles formed with ceramic material) arranged between the surface plate and the heat dissipation substrate for transferring heat from the surface plate to the heat dissipation substrate.
  • In the above heat dissipation substrate, the thermal particles of the thermal particle layer are arranged in an array or a non-array.
  • In the above heat dissipation substrate, an adhesive bonding material is filled between the thermal particles of the thermal particle layer.
  • The present invention can be best understood through the following description and accompanying drawings wherein:
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a perspective exploded view of the present invention;
  • FIG. 2 is a sectional assembled view of the present invention; and
  • FIG. 3 is an enlarged view of a part of the present invention.
    •  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Please refer to FIGS. 1 to 3. The present invention includes a surface plate 1, a heat dissipation substrate 2 and a thermal particle layer 3. The surface plate 1 is a sheet member having a first face and a second face. The first face of the surface plate 1 is connected to a heat source 4 (such as a semiconductor or a heat-generating component). The heat dissipation substrate 2 is disposed on the second face of the surface plate 1. The heat dissipation substrate 2 has larger heat dissipation area itself. Alternatively, the heat dissipation substrate 2 is connected to an external heat dissipation device (such as radiating fins or the like). The thermal particle layer 3 is disposed between the surface plate 1 and the heat dissipation substrate 2 in the form of a monoparticle layer. The thermal particle layer 3 includes multiple thermal particles 31 (such as particles formed with ceramic material diamond, SiC, AIN, Single Crystal Silicon) arranged immediately adjacent to each other (in an array or non-array). The thermal particles 31 are partially inlaid in the surface plate 1 or the heat dissipation substrate 2 so as to firmly and tightly connect and contact therewith by a large area. Accordingly, the heat can be efficiently transferred from the surface plate 1 through the thermal particle layer 3 to the heat dissipation substrate 2. An adhesive bonding material 32 is filled between the thermal particles 31 of the thermal particle layer 3. The main composition of the bonding material 32 is pure epoxy or epoxy added with SiC powder. The bonding material 32 not only serves to bond the thermal particles 31 to each other, but also is able to enhance connection strength between the surface plate 1 and the heat dissipation substrate 2.
  • In the above structure, the thermal particles 31 have an excellent thermal conductivity themselves and are extremely hard. Therefore, in the case that the surface plate 1 and the heat dissipation substrate 2 are pressed toward each other, at least some parts of the thermal particles 31, especially the sharp sections thereof, will thrust into the surface of the surface plate 1 or the heat dissipation substrate 2, which is generally made of metal material. Accordingly, the thermal particles 31 can firmly and tightly connect and contact with the surface plate 1 and the heat dissipation substrate 2 by larger area to reduce thermal resistance between the contact sections. Therefore, the heat generated by the heat source 4 can be uniformly distributed over the surface plate 1 and efficiently transferred through the thermal particles 31 of the thermal particle layer 3 to the heat dissipation substrate 2. The heat dissipation substrate 2 then conducts the heat to the radiating fins or the like heat dissipation structures to dissipate the heat. In comparison with the prior art, the present invention achieves better heat dissipation effect and is easier to process. Therefore, the manufacturing cost is reduced and the competitive ability is promoted.
  • In conclusion, the processing procedure of the high-performance heat dissipation substrate with monoparticle layer of the present invention is simplified. In addition, the heat conduction effect of the heat dissipation substrate of the present invention is enhanced.
  • The above embodiments are only used to illustrate the present invention, not intended to limit the scope thereof. Many modifications of the above embodiments can be made without departing from the spirit of the present invention.

Claims (20)

1. A high-performance heat dissipation substrate with monoparticle layer, comprising:
a surface plate at least having a first face and a second face, the first face of the surface plate being connected to a heat source;
a heat dissipation substrate disposed on the second face of the surface plate and connected to an external heat dissipation device; and
a thermal particle layer including multiple thermal particles arranged between the surface plate and the heat dissipation substrate for transferring heat from the surface plate to the heat dissipation substrate.
2. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 1, wherein the thermal particles are ceramic material particles.
3. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 2, wherein the thermal particles are selected from at lest one of ceramic materials such as diamond, SiC, AIN, Single Crystal Silicon.
4. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 1, wherein the thermal particles of the thermal particle layer are arranged in an array.
5. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 1, wherein the thermal particles of the thermal particle layer are arranged in a non-array.
6. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 1, wherein the thermal particles of the thermal particle layer are arranged in the form of a monoparticle layer.
7. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 1, wherein an adhesive bonding material is filled between the thermal particles of the thermal particle layer.
8. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 6, wherein an adhesive bonding material is filled between the thermal particles of the thermal particle layer.
9. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 7, wherein the bonding material is formed of epoxy or epoxy added with SiC powder.
10. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 8, wherein the bonding material is formed of epoxy or epoxy added with SiC powder.
11. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 1, wherein two opposite sides of the thermal particles are at least partially inlaid in the surface plate and at least one heat dissipation substrate.
12. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 2, wherein two opposite sides of the thermal particles are at least partially inlaid in the surface plate and at least one heat dissipation substrate.
13. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 3, wherein two opposite sides of the thermal particles are at least partially inlaid in the surface plate and at least one heat dissipation substrate.
14. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 6, wherein two opposite sides of the thermal particles are at least partially inlaid in the surface plate and at least one heat dissipation substrate.
15. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 7, wherein two opposite sides of the thermal particles are at least partially inlaid in the surface plate and at least one heat dissipation substrate.
16. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 8, wherein two opposite sides of the thermal particles are at least partially inlaid in the surface plate and at least one heat dissipation substrate.
17. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 9, wherein two opposite sides of the thermal particles are at least partially inlaid in the surface plate and at least one heat dissipation substrate.
18. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 1, wherein the thermal particles are arranged immediately adjacent to each other.
19. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 2, wherein the thermal particles are arranged immediately adjacent to each other.
20. The high-performance heat dissipation substrate with monoparticle layer as claimed in claim 3, wherein the thermal particles are arranged immediately adjacent to each other.
US12/588,817 2009-06-19 2009-10-29 High-performance heat dissipation substrate with monoparticle layer Abandoned US20100319897A1 (en)

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TW098120652 2009-06-19
TW098120652A TW201101980A (en) 2009-06-19 2009-06-19 High heat dissipation single grain diamond layer carrier

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030508A (en) * 2011-07-26 2013-02-07 Toyota Motor Corp Radiation film
CN103579130A (en) * 2012-08-03 2014-02-12 三菱电机株式会社 Semiconductor device and method for manufacturing semiconductor device
US20150330698A1 (en) * 2014-05-15 2015-11-19 Boe Technology Group Co., Ltd. Heat-dissipation film
EP3232469A1 (en) * 2016-04-14 2017-10-18 Hamilton Sundstrand Corporation Embedding diamond and other ceramic media into metal substrates to form thermal interface materials

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782893A (en) * 1986-09-15 1988-11-08 Trique Concepts, Inc. Electrically insulating thermally conductive pad for mounting electronic components
US20060037741A1 (en) * 2004-08-19 2006-02-23 Fujitsu Limited Heat transfer sheet, heat transfer structural body and manufacturing method of the heat transfer structural body
US20060185836A1 (en) * 2005-02-24 2006-08-24 Scott Garner Thermally coupled surfaces having controlled minimum clearance
US20070216274A1 (en) * 2006-03-17 2007-09-20 3M Innovative Properties Company Illumination assembly with enhanced thermal conductivity
US20070295496A1 (en) * 2006-06-23 2007-12-27 Hall David R Diamond Composite Heat Spreader
US20110024101A1 (en) * 2009-07-31 2011-02-03 Korea Electronics Technology Institute Thermal conductive substrate and method of manufacturing the same
US20110044004A1 (en) * 2009-08-18 2011-02-24 Garosshen Thomas J Heat transfer apparatus having a thermal interface material

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782893A (en) * 1986-09-15 1988-11-08 Trique Concepts, Inc. Electrically insulating thermally conductive pad for mounting electronic components
US20060037741A1 (en) * 2004-08-19 2006-02-23 Fujitsu Limited Heat transfer sheet, heat transfer structural body and manufacturing method of the heat transfer structural body
US20060185836A1 (en) * 2005-02-24 2006-08-24 Scott Garner Thermally coupled surfaces having controlled minimum clearance
US20070216274A1 (en) * 2006-03-17 2007-09-20 3M Innovative Properties Company Illumination assembly with enhanced thermal conductivity
US20070295496A1 (en) * 2006-06-23 2007-12-27 Hall David R Diamond Composite Heat Spreader
US20110024101A1 (en) * 2009-07-31 2011-02-03 Korea Electronics Technology Institute Thermal conductive substrate and method of manufacturing the same
US20110044004A1 (en) * 2009-08-18 2011-02-24 Garosshen Thomas J Heat transfer apparatus having a thermal interface material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030508A (en) * 2011-07-26 2013-02-07 Toyota Motor Corp Radiation film
CN103579130A (en) * 2012-08-03 2014-02-12 三菱电机株式会社 Semiconductor device and method for manufacturing semiconductor device
US20150330698A1 (en) * 2014-05-15 2015-11-19 Boe Technology Group Co., Ltd. Heat-dissipation film
EP3232469A1 (en) * 2016-04-14 2017-10-18 Hamilton Sundstrand Corporation Embedding diamond and other ceramic media into metal substrates to form thermal interface materials
US10074589B2 (en) 2016-04-14 2018-09-11 Hamilton Sundstrand Corporation Embedding diamond and other ceramic media into metal substrates to form thermal interface materials

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