US20110186892A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- US20110186892A1 US20110186892A1 US13/014,080 US201113014080A US2011186892A1 US 20110186892 A1 US20110186892 A1 US 20110186892A1 US 201113014080 A US201113014080 A US 201113014080A US 2011186892 A1 US2011186892 A1 US 2011186892A1
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- light emitting
- emitting device
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- conductive semiconductor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000003989 dielectric material Substances 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 306
- 239000012790 adhesive layer Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- -1 HfOx Inorganic materials 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910003087 TiOx Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000011241 protective layer Substances 0.000 description 32
- 230000000903 blocking effect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
Definitions
- the embodiment relates to a light emitting device, a method of manufacturing the same, and a light emitting device package.
- LEDs Light emitting diodes
- the LED is advantageous as compared with conventional light sources, such as a fluorescent lamp or a glow lamp, in terms of power consumption, life span, response speed, safety and environmental-friendly requirement.
- the LEDs are increasingly used as light sources for lighting devices such as various lamps used, liquid crystal displays, electric signboards, and street lamps.
- the embodiment provides a light emitting device having a novel structure, a method of manufacturing the same, a light emitting device package, and a lighting system.
- the embodiment provides a light emitting device capable of representing superior electrical stability, a method of manufacturing the same, a light emitting device package, and a lighting system.
- the embodiment provides a light emitting device capable of reducing the damage caused by ESD (Electro-Static Discharge), a method of manufacturing the same, and a light emitting device package.
- ESD Electro-Static Discharge
- a light emitting device includes a light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers, a conductive support substrate electrically connected to the second conductive semiconductor layer, a contact electrically connected to the first conductive semiconductor layer, a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate, and an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.
- a method of forming a light emitting device including forming a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, forming a recess part by selectively removing the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer such that the first conductive semiconductor layer is exposed, forming a first insulating layer in such a manner that the first conductive semiconductor layer is partially exposed in the recess part, the first insulating layer covering the active layer, forming a contact making contact with the first conductive semiconductor layer and the first insulating layer in the recess part, forming a dielectric material on the contact, and forming a conductive support substrate connected to the dielectric material.
- the light emitting device package includes a light emitting device claimed according to one of claims 1 to 13 and a package body including the light emitting device.
- a lighting system employs the light emitting device as a light source.
- the lighting system includes a substrate and a light emitting module including at least one light emitting device mounted on the substrate.
- the light emitting device is disclosed in one of claims 1 to 13 .
- FIG. 1 is a view showing a light emitting device according to the embodiment
- FIGS. 2 to 16 are views showing the method of manufacturing the light emitting device according to the embodiment
- FIG. 17 is a sectional view showing a light emitting device package including the light emitting device according to the embodiment.
- FIG. 18 is a view showing a backlight unit including the light emitting device or the light emitting device package according to the embodiment.
- FIG. 19 is a lighting unit including the light emitting device or the light emitting device package according to the embodiment.
- FIG. 20 is a view showing a light emitting device according to another embodiment
- FIG. 21 is a view showing a light emitting device according to still another embodiment.
- FIG. 22 is a view showing a light emitting device according to still yet another embodiment
- FIG. 23 is a view showing a light emitting device according to still yet another embodiment.
- FIG. 24 is a view showing a light emitting device according to still yet another embodiment.
- FIG. 25 is a view showing a light emitting device according to still yet another embodiment.
- FIG. 26 is a view showing a light emitting device according to still yet another embodiment.
- each layer shown in the drawings may be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity.
- the size of elements does not utterly reflect an actual size.
- FIG. 1 is a view used to explain the light emitting device according to the embodiment.
- the light emitting device 100 includes a conductive support substrate 205 , an adhesive layer 204 on the conductive support substrate 205 , a reflective layer 160 on the adhesive layer 204 , an ohmic contact layer 150 on the reflective layer 160 , a protective layer 140 at an outer peripheral portion of a top surface of the adhesive layer 204 , a light emitting structure layer 135 formed on the ohmic contact layer 150 and the protective layer 140 to generate light, a passivation layer 180 to protect the light emitting structure layer 135 , a current blocking layer 145 between the reflective layer 160 and the light emitting structure layer 135 , and an electrode unit 115 on the light emitting structure layer 135 .
- the light emitting structure layer 135 includes a first conductive semiconductor layer 110 , a second conductive semiconductor layer 130 , and an active layer 120 between the first and second conductive semiconductor layers 110 and 130 .
- the light emitting device 100 may include a capacitor structure including a first insulating layer 501 , a second insulating layer 504 , a contact 502 , and a dielectric material 503 .
- the dielectric material 503 is formed below the contact 502 , and interposed between the contact 502 and the adhesive layer 204 . In addition, the dielectric material 503 is interposed between the contact 502 and the conductive support substrate 205 .
- a top surface of the dielectric material 503 may make contact with the contact 502 . At least a part of lateral surfaces of the dielectric material 503 is surrounded by the contact 502 . Accordingly, the contact area between the contact 502 and the dielectric material 503 may be increased.
- a bottom surface of the dielectric material 503 may make contact with the adhesive layer 204 .
- the bottom surface of the dielectric material 503 may make contact with the ohmic contact layer 150 or the reflective layer 160 .
- An insulating layer including the first and second insulating layers 501 and 504 surround the lateral surfaces of the contact 502 and electrically insulate the contact 502 from the active layer 120 and the second conductive semiconductor layer 130 .
- the first insulating layer 501 electrically insulates the contact 502 from the active layer 120 and the second conductive semiconductor layer 130
- the second insulating layer 504 electrically insulates the contract 502 from the ohmic contact layer 150 , the reflective layer 160 , the adhesive layer 204 , and the conductive support substrate 205 .
- Inner surfaces of the first insulating layer 501 may make contact with the contact 502 and the dielectric material 503 . According to the embodiment, the inner surfaces of the first insulating layer 501 make contact with the contact 502 . However, similarly to the structure of the light emitting device 100 of FIG. 20 according to another embodiment, the inner surfaces of the first insulating layer 501 may make contact with the dielectric material 503 by changing the structure of the contact 502 and the dielectric material 503 .
- Outer surfaces of the first insulating layer 501 make contact with the first conductive semiconductor layer 110 , the second conductive semiconductor layer 130 , the active layer 120 , and the second insulating layer 504 .
- the outer surfaces of the first insulating layer 501 may make contact with the ohmic contact layer 150 and/or the reflective layer 160 by changing the structure of the second insulating layer 504 , the ohmic contact layer 150 , and the reflective layer 160 similarly to the structure of the light emitting device 100 of FIG. 21 according to still another embodiment.
- Inner surfaces of the second insulating layer 504 make contact with the first insulating layer 501 , the contact 502 , the dielectric material 503 , and the adhesive layer 204 .
- the inner surfaces of the second insulating layer 504 may make contact with only the dielectric material 503 or the adhesive layer 204 together with the contact 502 by changing the structure of the first insulating layer 501 , the contact 502 , the dielectric material 503 , and the adhesive layer 204 similarly to light emitting devices 100 of FIGS. 22 and 23 .
- Outer surfaces of the second insulating layer 504 make contact with the adhesive layer 204 , the protective layer 140 , and the ohmic contact layer 150 .
- the outer surfaces of the second insulating layer 504 may make contact with only the adhesive layer 204 by changing the structure of the adhesive layer 204 , the protective layer 140 , the ohmic contact layer 150 , and the reflective layer 160 similarly to the structure of the light emitting device 100 of FIG. 24 according to still another embodiment, and may make contact with the reflective layer 160 similarly to the structure of the light emitting device 100 of FIG. 21 according to still yet another embodiment.
- the insulating layer including the first and second insulating layers 501 and 504 may include a material having electrical conductivity.
- the insulating layer may include at least one selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 , and TiO x .
- the contact 502 may make contact with the first conductive semiconductor layer 110 .
- the first conductive semiconductor layer 110 may include a GaN layer doped with first conductive impurities, and the contact 502 may make contact with a Ga-face GaN layer.
- the contact 502 may include a material forming ohmic contact with respect to the first conductive semiconductor layer 110 .
- the contact 502 may include at least one selected from the group consisting of Cr, Ti, and Al.
- the dielectric material 503 may include a material having a dielectric property.
- the dielectric material 503 may include at least one selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 , TiO x , HfO x , BST (Barium strontium titanate), and silicon.
- the dielectric material 503 may include multi-crystalline silicon or single-crystalline silicon.
- the multi-crystalline silicon or the single-crystalline silicon may be doped with impurities such as Be, B, N, P, Mg, As, and Sb.
- the dielectric material 503 may have a thickness of about 1 nm to about 100 nm.
- the capacitor structure prevents the active layer 120 from being damaged due to ESD (Electro-Static Discharge) when the ESD occurs.
- ESD Electro-Static Discharge
- a constant voltage is applied to the light emitting structure layer 135 , a current flows to the active layer 120 so that light is emitted due to the recombination of carriers.
- energy having a high-frequency component flows to the dielectric substance 503 of the capacitor structure, so the active layer 120 can be protected.
- the conductive support substrate 205 supports the light emitting structure layer 135 and can supply power to the light emitting structure layer 135 together with the electrode unit 115 .
- the conductive support substrate 205 may include at least one selected from the group consisting of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu—W), and a carrier wafer (including Si, Ge, GaAs, ZnO, or SiC)
- the conductive support substrate 205 may have a thickness varying according to the design of the light emitting device 100 .
- the conductive support substrate 205 may have a thickness in the range of 50 ⁇ m to 300 ⁇ m.
- the adhesive layer 204 may be formed on the conductive support substrate 205 .
- the adhesive layer 204 serves as a bonding layer, and is formed below the reflective layer 160 , the protective layer 140 , the second insulating layer 504 , and the dielectric material 503 .
- the adhesive layer 204 makes contact with the reflective layer 160 , the ohmic contact layer 150 , the second insulating layer 504 , and the protective layer 140 , such that the reflective layer 160 , the ohmic contact layer 150 , and the protective layer 140 are firmly bonded to the conductive support substrate 205 .
- the adhesive layer 204 may include barrier metal or bonding metal.
- the adhesive layer 204 may include at least one selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta.
- the reflective layer 160 may be formed on the adhesive layer 204 .
- the reflective layer 160 reflects light incident from the light emitting structure layer 135 , so that light extraction efficiency can be improved.
- the reflective layer 160 may include metal including at least one selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or the alloy thereof.
- the reflective layer 160 may be formed in a multiple structure by using the metal or the alloy and transmissive conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO.
- the reflective layer 160 may have a stack structure of IZO/Ni, AZO/Ag, IZO/Ag/Ni, or AZO/Ag/Ni.
- the reflective layer 160 may make contact with the protective layer 140 , the current blocking layer 145 , the second insulating layer 504 , or the light emitting structure layer 135 .
- the ohmic contact layer 150 may be formed on the reflective layer 160 .
- the ohmic contact layer 150 makes ohmic contact with the second conductive semiconductor layer 130 to allow power to be smoothly supplied to the light emitting structure layer 135 .
- the ohmic contact layer 150 may include at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO.
- the ohmic contact layer 150 may selectively include a transmissive conductive layer or metal.
- the ohmic contact layer 150 may be formed in a single layer structure or a multiple layer structure by using at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x , RuO x , RuO x /ITO, Ni, Ag, Ni/IrO x /Au, and Ni/IrO x /Au/ITO.
- the ohmic contact layer 150 may be spaced apart from the current blocking layer 145 , or may make contact with only the lateral surface of the current blocking layer 145 .
- the ohmic contact layer 150 may be omitted according to embodiments.
- the current blocking layer 145 may be interposed between the ohmic contact layer 150 and the second conductive semiconductor layer 130 .
- the top surface of the current blocking layer 145 makes contact with the second conductive semiconductor layer 130
- the bottom surface and the lateral surface of the current blocking layer 145 make contact with the ohmic contact layer 150 .
- At least a part of the current blocking layer 145 may overlap with the electrode unit 115 perpendicularly to the electrode unit 115 . Accordingly, the concentration of a current onto the shortest path between the electrode unit 115 and the conductive support substrate 205 can be reduced, so that the light emission efficiency of the light emitting device 100 can be improved.
- the current blocking layer 145 may include a material having electrical conductivity lower than that of a material constituting the reflective layer 160 or the ohmic contact layer 150 , a material forming schottky contact with respect to the second conductive semiconductor layer 130 , or a material having an electrical insulating property.
- the current blocking layer 145 may include at least one selected from the group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO x , Ti, Al, and Cr.
- the current blocking layer 145 may be omitted according to embodiments.
- the protective layer 140 may be formed at the outer peripheral portion of the top surface of the adhesive layer 204 .
- the protective layer 140 may be formed at an outer peripheral portion between the light emitting structure layer 135 and the adhesive layer 204 , and may include an electrical insulating material such as ZnO or SiO 2 .
- a part of the protective layer 140 overlaps with the light emitting structure layer 135 perpendicularly to the light emitting structure layer 135 .
- the protective layer 140 increases the lateral surface distance between the adhesive layer 204 and the active layer 120 . Accordingly, the protective layer 140 can reduce the possibility of the electrical short between the adhesive layer 204 and the active layer 120 .
- fragments may be derived from the adhesive layer 204 and attached between the second conductive semiconductor layer 130 and the active layer 120 , or between the active layer 120 and the first conductive semiconductor layer 110 , thereby causing electrical short therebetween.
- the protective layer 140 prevents the electrical short.
- the protective layer 140 may include a material that is not broken or fragmented in the isolation etching process, or an electrical insulating material that does not cause electrical short even if an extremely less part of the material is broken or fragmented.
- the protective layer 140 may be omitted according to embodiments.
- the light emitting structure layer 135 may be formed on the ohmic contact layer 150 and the protective layer 140 .
- the lateral surface of the light emitting structure layer 135 may be inclined in the isolation etching process to divide the light emitting structure layer 135 to the unit chips, and a part of the inclined surface overlaps with the protective layer 140 perpendicularly to the protective layer 140 .
- a part of the top surface of the protective layer 140 may be exposed through the isolation etching process. Accordingly, a part of the protective layer 140 overlaps with the light emitting structure layer 135 perpendicularly to the light emitting structure layer 135 , and a remaining part of the protective layer 140 does not overlap with the light emitting structure layer 135 .
- the light emitting structure layer 135 may include compound semiconductor layers of group III to V elements.
- the light emitting structure layer 135 may include the first conductive semiconductor layer 110 , the active layer 120 below the first conductive semiconductor layer 110 , and the second conductive semiconductor layer 130 below the active layer 120 .
- the first conductive semiconductor layer 110 may include an N type semiconductor layer.
- the first conductive semiconductor layer 110 may include a semiconductor material having a compositional formula of In x Al y Ga 1-x-y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
- the first conductive semiconductor layer 110 may be selected from the group consisting of InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, and InN and may be doped with N type dopants such as Si, Ge, Sn, Se, and Te.
- the first conductive semiconductor layer 110 may have a single layer structure or a multiple layer structure, but the embodiment is not limited thereto.
- the active layer 120 emits the light based on the band gap difference of the energy band according to a material constituting the active layer 120 through the recombination of electrons (or holes) injected through the first conductive semiconductor layer 110 and holes (or electrons) injected through the second conductive semiconductor layer 130 .
- the active layer 120 may have a single quantum well structure, a multiple quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, but the embodiment is not limited thereto.
- MQW multiple quantum well
- the active layer 120 may include semiconductor material having a compositional formula of In x Al y Ga 1-x-y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1). If the active layer 120 has the MQW structure, the active layer 120 may have a stack structure of a plurality of well layers and a plurality of barrier layers. For example, the active layer 120 may include a stack structure of InGaN well/GaN barrier layers.
- a clad layer (not shown) doped with N type dopants or P type dopants may be formed on and/or below the active layer 120 , and the clad layer (not shown) may include an AlGaN layer or an InAlGaN layer.
- the second conductive semiconductor layer 130 may include a P type semiconductor layer.
- the second conductive semiconductor layer 130 may include semiconductor material having a compositional formula of In x Al y Ga 1-x-y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
- the second conductive semiconductor layer 130 may be selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, and InN, and may be doped with P type dopants such as Mg, Zn, Ca, Sr, and Ba.
- the first conductive semiconductor layer 110 may include a P type semiconductor layer
- the second conductive semiconductor layer 130 may include an N type semiconductor layer
- a third conductive semiconductor layer (not shown) including an N type semiconductor layer or a P type semiconductor layer may be formed on the second conductive semiconductor layer 130 .
- the light emitting structure layer may have at least one of NP, PN, NPN, and PNP junction structures.
- the doping concentration of impurities in the first and second conductive semiconductor layers 110 and 130 may be uniform or irregular.
- the light emitting structure layer may have various structures, and the embodiment is not limited thereto.
- the light emitting structure layer including the first conductive semiconductor layer 110 , the second conductive semiconductor layer 130 , and the active layer 120 may have various modified structures and is not limited to the structure according to the embodiment.
- the electrode unit 115 is formed on the light emitting structure layer 135 .
- the electrode unit 115 may include a pad part subject to a wire bonding scheme and an extension part extending from the pad part.
- the extension part may have various patterns including a predetermined branch pattern.
- a roughness or a predetermined pattern 112 may be formed on the top surface of the first conductive semiconductor layer 110 . Accordingly, a roughness or a pattern may be formed on the top surface of the electrode unit 115 , but the embodiment is not limited thereto.
- the passivation layer 180 may be formed on at least a lateral surface of the light emitting structure layer 135 .
- the passivation layer 180 may be formed on top surfaces of the first conductive semiconductor layer 110 and the protective layer 140 , but the embodiment is not limited thereto.
- the passivation layer 180 may electrically protect the light emitting structure layer 135 .
- FIGS. 2 to 16 are views showing the method of manufacturing the light emitting device according to the embodiment.
- the light emitting structure layer 135 is formed on a growth substrate 101 .
- the growth substrate 101 may include at least one selected from the group consisting of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga 2 O 3 , but the embodiment is not limited thereto.
- the light emitting structure layer 135 may be formed by growing the first conductive semiconductor layer 110 , the active layer 120 , and the second conductive semiconductor layer 130 from the growth substrate 101 ,
- the light emitting structure layer 135 may be formed through MOCVD (Metal Organic Chemical Vapor Deposition), CVD (Chemical Vapor Deposition), PECVD (Plasma-Enhanced Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), or HVPE (Hydride Vapor Phase Epitaxy), but the embodiment is not limited thereto.
- MOCVD Metal Organic Chemical Vapor Deposition
- CVD Chemical Vapor Deposition
- PECVD Plasma-Enhanced Chemical Vapor Deposition
- MBE Molecular Beam Epitaxy
- HVPE Hydride Vapor Phase Epitaxy
- a buffer layer (not shown) and/or an undoped nitride layer (not shown) may be formed between the light emitting structure layer 135 and the growth substrate 101 in order to reduce lattice constant mismatch between the light emitting structure layer 135 and the growth substrate 101 .
- the protective layer 140 may be selectively formed on the light emitting structure layer 135 corresponding to the unit chip region.
- the protective layer 140 may be formed at an outer peripheral portion of the unit chip region by using a mask pattern.
- the protective layer 140 may be formed through various deposition schemes such as a sputtering scheme.
- the current blocking layer 145 may be formed on the second conductive semiconductor layer 130 .
- the current blocking layer 145 may be formed by using a mask pattern.
- the protective layer 140 and the current blocking layer 145 may include the same material.
- the protective layer 140 and the current blocking layer 145 are not formed through separate processes, but may be simultaneously formed through one process.
- the protective layer 140 and the current blocking layer 145 may be simultaneously formed by using a mask pattern.
- a recess part 500 is formed by selectively removing the second conductive semiconductor layer 130 , the active layer 120 , and the first conductive semiconductor layer 110 so that the first conductive semiconductor layer 110 is exposed.
- the first insulating layer 501 is formed in the recess part 500 in such a manner that the first conductive semiconductor layer 110 is partially exposed.
- the first insulating layer 501 may be formed in such a manner that the bottom surface of the recess part 500 is partially exposed, and may be partially formed on the top surface of the second conductive semiconductor layer 130 .
- the contact 502 is formed in the recess part 500 having the first insulating layer 501 .
- the contact 502 makes contact with the first conductive semiconductor layer 110 and is filled in at least a part of the recess part 500 while making contact with an inner wall of the first insulating layer 501 .
- the contact 502 may be partially formed on a top surface of the first insulating layer 501 .
- the dielectric material 503 is formed while making contact with the contact 502 .
- the dielectric material 503 is filled in the contact 502 , and at least a part of the dielectric material 503 may be protrude from an upper portion of the contact 502 .
- the second insulating layer 504 is formed while surrounding the contact 502 .
- the second insulating layer 504 may make contact with the first insulating layer 501 and the dielectric material 503 while surrounding the contact 502 protruding out of the first insulating layer 501 .
- the reflective layer 160 may be formed on the ohmic contact layer 150 .
- the ohmic contact layer 150 and the reflective layer 160 may be formed through one of an E-beam deposition scheme, a sputtering scheme, and a PECVD (Plasma Enhanced Chemical Vapor Deposition) scheme.
- the conductive support substrate 205 is prepared.
- the structure shown in FIG. 11 is bonded to the conductive support substrate 205 through the adhesive layer 204 .
- the adhesive layer 204 is bonded to the reflective layer 160 , an end portion of the ohmic contact layer 150 , the second insulating layer 504 , and the protective layer 140 , so that inter-layer adhesive strength can be enhanced.
- the conductive support substrate 205 is bonded through the adhesive layer 204 . According to the embodiment, although the conductive support substrate 205 is bonded through a boding scheme using the adhesive layer 204 , the conductive support substrate 205 may be bonded through a plating scheme or a deposition scheme without the adhesive layer 204 .
- FIG. 14 shows an inverse structure of FIG. 13 .
- the growth substrate 101 may be removed through a laser lift off scheme or a chemical lift off scheme.
- the light emitting structure layer 135 is divided into a plurality of light emitting structure layers through an isolation etching process along a unit chip region.
- the isolation etching process may include a dry etching scheme such as an ICP (Inductively Coupled Plasma) etching scheme.
- the passivation layer 180 may be selectively removed to expose the top surface of the first conductive semiconductor layer 110 .
- the roughness or the pattern 112 is formed on the top surface of the first conductive semiconductor layer 110 in order to improve light extraction efficiency, and the electrode unit 115 is formed on the roughness or the pattern 112 .
- the roughness or the pattern 112 may be formed through a wet etching process or a dry etching process.
- the structure is divided into unit chip regions through a chip separation process, so that a plurality of light emitting devices 100 can be manufactured.
- the chip separation process may include a breaking process to divide chips by applying physical force by using a blade, a laser scribing process to divide chips by irradiating a laser bean into a chip boundary, or an etching process including a wet etching process or a dry etching process, but the embodiment is not limited thereto.
- FIG. 17 is a view showing a light emitting device package 600 including the light emitting device 100 according to the embodiments.
- the light emitting device package 600 includes a body 200 , first and second electrodes 210 and 220 formed on the body 200 , the light emitting device 100 provided on the body 200 and electrically connected to the first and second electrodes 210 and 220 , and a molding member 400 that surrounds the light emitting device 100 .
- the body 200 may include silicon, synthetic resin or metallic material.
- An inclined surface may be formed around the light emitting device 100 .
- the first and second electrodes 210 and 220 are electrically insulated from each other to supply power to the light emitting device 100 .
- the first and second electrodes 210 and 220 reflect the light emitted from the light emitting device 100 to improve the light efficiency and dissipate heat generated from the light emitting device 100 to the outside.
- the light emitting device 100 may be mounted on the body 200 or may be mounted on the first electrode 210 or the second electrode 220 .
- the light emitting device 100 may be electrically connected to the second electrode 220 through a wire 300 .
- the light emitting device 100 directly makes contact with the first electrode 210 so that the light emitting device 100 may be electrically connected to the first electrode 210 .
- the molding member 400 surrounds the light emitting device 100 to protect the light emitting device 100 .
- the molding member 40 may include luminescence material to change the wavelength of the light emitted from the light emitting device 100 .
- a plurality of light emitting device packages 600 according to the embodiment may be arrayed on a substrate, and an optical member including a light guide plate, a prism sheet, a diffusion sheet, and a fluorescent sheet may be provided on the optical path of the light emitted from the light emitting device package 600 .
- the light emitting device package, the substrate, and the optical member may serve as a backlight unit or a lighting unit.
- the lighting system may include a backlight unit, a lighting unit, an indicator, a lamp or a streetlamp.
- FIG. 18 is a view showing a backlight unit 1100 including the light emitting device or the light emitting device package according to the embodiment.
- the backlight unit 1100 shown in FIG. 18 is an example of a lighting system, but the embodiment is not limited thereto.
- the backlight unit 1100 includes a bottom frame 1140 , a light guide member 1120 installed in the bottom frame 1140 , and a light emitting module 1110 installed at one side or on the bottom surface of the light guide member 1120 .
- a reflective sheet 1130 is disposed below the light guide member 1120 .
- the bottom frame 1140 has a box shape having an open top surface to receive the light guide member 1120 , the light emitting module 1110 and the reflective sheet 1130 therein.
- the bottom frame 1140 may include metallic material or resin material, but the embodiment is not limited thereto.
- the light emitting module 1110 may include a substrate 700 and a plurality of light emitting device packages 600 installed on the substrate 700 .
- the light emitting device packages 600 provide the light to the light guide member 1120 .
- the light emitting device packages 600 are installed on the substrate 700 .
- the light emitting module 1110 is installed on at least one inner side of the bottom frame 1140 to provide the light to at least one side of the light guide member 1120 .
- the light emitting module 1110 can be provided below the bottom frame 1140 to provide the light toward the bottom surface of the light guide member 1120 .
- Such an arrangement can be variously changed according to the design of the backlight unit 1100 , but the embodiment is not limited thereto.
- the light guide member 1120 is installed in the bottom frame 1140 .
- the light guide member 1120 converts the light emitted from the light emitting module 1110 into the surface light to guide the surface light toward a display panel (not shown).
- the light guide member 1120 may include a light guide plate.
- the light guide plate can be manufactured by using acryl-based resin, such as PMMA (polymethyl methacrylate), PET (polyethylene terephthalate), PC (polycarbonate), COC or PEN (polyethylene naphthalate) resin.
- PMMA polymethyl methacrylate
- PET polyethylene terephthalate
- PC polycarbonate
- COC polycarbonate
- PEN polyethylene naphthalate
- An optical sheet 1150 may be provided over the light guide member 1120 .
- the optical sheet 1150 may include at least one of a diffusion sheet, a light collection sheet, a brightness enhancement sheet, and a fluorescent sheet.
- the optical sheet 1150 has a stack structure of the diffusion sheet, the light collection sheet, the brightness enhancement sheet, and the fluorescent sheet.
- the diffusion sheet uniformly diffuses the light emitted from the light emitting module 1110 such that the diffused light can be collected on the display panel (not shown) by the light collection sheet.
- the light output from the light collection sheet is randomly polarized and the brightness enhancement sheet increases the degree of polarization of the light output from the light collection sheet.
- the light collection sheet may include a horizontal and/or vertical prism sheet.
- the brightness enhancement sheet may include a dual brightness enhancement film and the fluorescent sheet may include a transmissive plate or a transmissive film including luminescence material.
- the reflective sheet 1130 can be disposed below the light guide member 1120 .
- the reflective sheet 1130 reflects the light, which is emitted through the bottom surface of the light guide member 1120 , toward the light exit surface of the light guide member 1120 .
- the reflective sheet 1130 may include resin material having high reflectivity, such as PET, PC or PVC resin, but the embodiment is not limited thereto.
- FIG. 19 is a perspective view showing a lighting unit 1200 including the light emitting device or the light emitting device package according to the embodiment.
- the lighting unit 1200 shown in FIG. 19 is an example of a lighting system and the embodiment is not limited thereto.
- the lighting unit 1200 includes a case body 1210 , a light emitting module 1230 installed in the case body 1210 , and a connection terminal 1220 installed in the case body 1210 to receive power from an external power source.
- the case body 1210 includes material having superior heat dissipation property.
- the case body 1210 includes metallic material or resin material.
- the light emitting module 1230 may include a substrate 700 and at least one light emitting device package 600 installed on the substrate 700 .
- the light emitting device package 600 is installed on the substrate 700 .
- the substrate 700 includes an insulating member printed with a circuit pattern.
- the substrate 700 includes a PCB (printed circuit board), an MC (metal core) PCB, a flexible PCB, or a ceramic PCB.
- the substrate 700 may include material that effectively reflects the light.
- the surface of the substrate 700 can be coated with a color, such as a white color or a silver color, to effectively reflect the light.
- At least one light emitting device package 600 can be installed on the substrate 700 .
- Each light emitting device package 600 may include at least one LED (light emitting diode).
- the LED may include a colored LED that emits the light having the color of red, green, blue or white and a UV (ultraviolet) LED that emits UV light.
- the LEDs of the light emitting module 1230 can be variously arranged to provide various colors and brightness.
- the white LED, the red LED and the green LED can be arranged to achieve the high color rendering index (CRI).
- a fluorescent sheet can be provided in the path of the light emitted from the light emitting module 1230 to change the wavelength of the light emitted from the light emitting module 1230 .
- the fluorescent sheet may include yellow luminescent material. In this case, the light emitted from the light emitting module 1230 passes through the fluorescent sheet so that the light is viewed as white light.
- connection terminal 1220 is electrically connected to the light emitting module 1230 to supply power to the light emitting module 1230 .
- the connection terminal 1220 has a shape of a socket screw-coupled with the external power source, but the embodiment is not limited thereto.
- the connection terminal 1220 can be prepared in the form of a pin inserted into the external power source or connected to the external power source through a wire.
- At least one of the light guide member, the diffusion sheet, the light collection sheet, the brightness enhancement sheet and the fluorescent sheet is provided in the path of the light emitted from the light emitting module, so that the desired optical effect can be achieved.
- the lighting system includes the light emitting device or the light emitting device package representing superior electrical stability so that superior electrical reliability can be represented.
- any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
- the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.
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Abstract
Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes the light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers, a conductive support substrate electrically connected to the second conductive semiconductor layer, a contact electrically connected to the first conductive semiconductor layer, a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate, and an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.
Description
- The present application claims priority of Korean Patent Application No. 10-2010-0010246 filed on Feb. 4, 2010, which is hereby incorporated by reference in its entirety.
- The embodiment relates to a light emitting device, a method of manufacturing the same, and a light emitting device package.
- Light emitting diodes (LEDs) area kind of semiconductor devices that convert electric energy into light. The LED is advantageous as compared with conventional light sources, such as a fluorescent lamp or a glow lamp, in terms of power consumption, life span, response speed, safety and environmental-friendly requirement.
- In this regard, various studies have been performed to replace the conventional light sources with the LEDs. The LEDs are increasingly used as light sources for lighting devices such as various lamps used, liquid crystal displays, electric signboards, and street lamps.
- The embodiment provides a light emitting device having a novel structure, a method of manufacturing the same, a light emitting device package, and a lighting system.
- The embodiment provides a light emitting device capable of representing superior electrical stability, a method of manufacturing the same, a light emitting device package, and a lighting system.
- The embodiment provides a light emitting device capable of reducing the damage caused by ESD (Electro-Static Discharge), a method of manufacturing the same, and a light emitting device package.
- According to the embodiment, a light emitting device includes a light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers, a conductive support substrate electrically connected to the second conductive semiconductor layer, a contact electrically connected to the first conductive semiconductor layer, a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate, and an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.
- According to the embodiment, a method of forming a light emitting device including forming a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, forming a recess part by selectively removing the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer such that the first conductive semiconductor layer is exposed, forming a first insulating layer in such a manner that the first conductive semiconductor layer is partially exposed in the recess part, the first insulating layer covering the active layer, forming a contact making contact with the first conductive semiconductor layer and the first insulating layer in the recess part, forming a dielectric material on the contact, and forming a conductive support substrate connected to the dielectric material.
- According to the embodiment, the light emitting device package includes a light emitting device claimed according to one of claims 1 to 13 and a package body including the light emitting device.
- According to the embodiment, a lighting system employs the light emitting device as a light source. The lighting system includes a substrate and a light emitting module including at least one light emitting device mounted on the substrate. The light emitting device is disclosed in one of claims 1 to 13.
-
FIG. 1 is a view showing a light emitting device according to the embodiment; -
FIGS. 2 to 16 are views showing the method of manufacturing the light emitting device according to the embodiment; -
FIG. 17 is a sectional view showing a light emitting device package including the light emitting device according to the embodiment; -
FIG. 18 is a view showing a backlight unit including the light emitting device or the light emitting device package according to the embodiment; -
FIG. 19 is a lighting unit including the light emitting device or the light emitting device package according to the embodiment; -
FIG. 20 is a view showing a light emitting device according to another embodiment; -
FIG. 21 is a view showing a light emitting device according to still another embodiment; -
FIG. 22 is a view showing a light emitting device according to still yet another embodiment; -
FIG. 23 is a view showing a light emitting device according to still yet another embodiment; and -
FIG. 24 is a view showing a light emitting device according to still yet another embodiment. -
FIG. 25 is a view showing a light emitting device according to still yet another embodiment; and -
FIG. 26 is a view showing a light emitting device according to still yet another embodiment. - In the description of the embodiments, it will be understood that, when a layer (or film), a region, a pattern, or a structure is referred to as being “on” or “under” another substrate, another layer (or film), another region, another pad, or another pattern, it can be “directly” or “indirectly” over the other substrate, layer (or film), region, pad, or pattern, or one or more intervening layers may also be present. Such a position of the layer has been described with reference to the drawings.
- The thickness and size of each layer shown in the drawings may be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity. In addition, the size of elements does not utterly reflect an actual size.
- Hereinafter, a
light emitting device 100, a method of manufacturing the same, a lightemitting device package 600, and a lighting system according to the embodiment will be described with reference to accompanying drawings. -
FIG. 1 is a view used to explain the light emitting device according to the embodiment. - Referring to
FIG. 1 , thelight emitting device 100 according to the embodiment includes aconductive support substrate 205, anadhesive layer 204 on theconductive support substrate 205, areflective layer 160 on theadhesive layer 204, anohmic contact layer 150 on thereflective layer 160, aprotective layer 140 at an outer peripheral portion of a top surface of theadhesive layer 204, a lightemitting structure layer 135 formed on theohmic contact layer 150 and theprotective layer 140 to generate light, apassivation layer 180 to protect the lightemitting structure layer 135, acurrent blocking layer 145 between thereflective layer 160 and the lightemitting structure layer 135, and anelectrode unit 115 on the lightemitting structure layer 135. - The light
emitting structure layer 135 includes a firstconductive semiconductor layer 110, a secondconductive semiconductor layer 130, and anactive layer 120 between the first and secondconductive semiconductor layers - In addition, the
light emitting device 100 according to the embodiment may include a capacitor structure including a firstinsulating layer 501, a secondinsulating layer 504, acontact 502, and adielectric material 503. - The
dielectric material 503 is formed below thecontact 502, and interposed between thecontact 502 and theadhesive layer 204. In addition, thedielectric material 503 is interposed between thecontact 502 and theconductive support substrate 205. - A top surface of the
dielectric material 503 may make contact with thecontact 502. At least a part of lateral surfaces of thedielectric material 503 is surrounded by thecontact 502. Accordingly, the contact area between thecontact 502 and thedielectric material 503 may be increased. - A bottom surface of the
dielectric material 503 may make contact with theadhesive layer 204. However, similarly to the structure of thelight emitting device 100 ofFIG. 25 orFIG. 26 according to another embodiment, the bottom surface of thedielectric material 503 may make contact with theohmic contact layer 150 or thereflective layer 160. - An insulating layer including the first and second
insulating layers contact 502 and electrically insulate thecontact 502 from theactive layer 120 and the secondconductive semiconductor layer 130. - According to the embodiment, the first
insulating layer 501 electrically insulates thecontact 502 from theactive layer 120 and the secondconductive semiconductor layer 130, and the secondinsulating layer 504 electrically insulates thecontract 502 from theohmic contact layer 150, thereflective layer 160, theadhesive layer 204, and theconductive support substrate 205. - Inner surfaces of the first
insulating layer 501 may make contact with thecontact 502 and thedielectric material 503. According to the embodiment, the inner surfaces of the first insulatinglayer 501 make contact with thecontact 502. However, similarly to the structure of thelight emitting device 100 ofFIG. 20 according to another embodiment, the inner surfaces of the firstinsulating layer 501 may make contact with thedielectric material 503 by changing the structure of thecontact 502 and thedielectric material 503. - Outer surfaces of the first
insulating layer 501 make contact with the firstconductive semiconductor layer 110, the secondconductive semiconductor layer 130, theactive layer 120, and the secondinsulating layer 504. Although the outer surfaces of the firstinsulating layer 501 make contact with the firstconductive semiconductor layer 110, the secondconductive semiconductor layer 130, theactive layer 120, and the secondinsulating layer 504 according to the embodiment, the outer surfaces of the firstinsulating layer 501 may make contact with theohmic contact layer 150 and/or thereflective layer 160 by changing the structure of the secondinsulating layer 504, theohmic contact layer 150, and thereflective layer 160 similarly to the structure of thelight emitting device 100 ofFIG. 21 according to still another embodiment. - Inner surfaces of the second
insulating layer 504 make contact with the firstinsulating layer 501, thecontact 502, thedielectric material 503, and theadhesive layer 204. Although the inner surfaces of the secondinsulating layer 504 make contact with the firstinsulating layer 501, thecontact 502, thedielectric material 503, and theadhesive layer 204 according to the embodiment, the inner surfaces of the secondinsulating layer 504 may make contact with only thedielectric material 503 or theadhesive layer 204 together with thecontact 502 by changing the structure of the firstinsulating layer 501, thecontact 502, thedielectric material 503, and theadhesive layer 204 similarly to light emittingdevices 100 ofFIGS. 22 and 23 . - Outer surfaces of the second
insulating layer 504 make contact with theadhesive layer 204, theprotective layer 140, and theohmic contact layer 150. Although the outer surfaces of the secondinsulating layer 504 make contact with theadhesive layer 204, theprotective layer 140, and theohmic contact layer 150 according to the embodiment, the outer surfaces of the secondinsulating layer 504 may make contact with only theadhesive layer 204 by changing the structure of theadhesive layer 204, theprotective layer 140, theohmic contact layer 150, and thereflective layer 160 similarly to the structure of thelight emitting device 100 ofFIG. 24 according to still another embodiment, and may make contact with thereflective layer 160 similarly to the structure of thelight emitting device 100 ofFIG. 21 according to still yet another embodiment. - The insulating layer including the first and second
insulating layers - The
contact 502 may make contact with the firstconductive semiconductor layer 110. For example, the firstconductive semiconductor layer 110 may include a GaN layer doped with first conductive impurities, and thecontact 502 may make contact with a Ga-face GaN layer. Thecontact 502 may include a material forming ohmic contact with respect to the firstconductive semiconductor layer 110. For example, thecontact 502 may include at least one selected from the group consisting of Cr, Ti, and Al. - The
dielectric material 503 may include a material having a dielectric property. For example, thedielectric material 503 may include at least one selected from the group consisting of SiO2, Si3N4, Al2O3, TiOx, HfOx, BST (Barium strontium titanate), and silicon. Thedielectric material 503 may include multi-crystalline silicon or single-crystalline silicon. The multi-crystalline silicon or the single-crystalline silicon may be doped with impurities such as Be, B, N, P, Mg, As, and Sb. Thedielectric material 503 may have a thickness of about 1 nm to about 100 nm. - As described above, the capacitor structure prevents the
active layer 120 from being damaged due to ESD (Electro-Static Discharge) when the ESD occurs. In other words, if a constant voltage is applied to the light emittingstructure layer 135, a current flows to theactive layer 120 so that light is emitted due to the recombination of carriers. In addition, when the ESD occurs, energy having a high-frequency component flows to thedielectric substance 503 of the capacitor structure, so theactive layer 120 can be protected. - Meanwhile, the
conductive support substrate 205 supports the light emittingstructure layer 135 and can supply power to the light emittingstructure layer 135 together with theelectrode unit 115. Theconductive support substrate 205 may include at least one selected from the group consisting of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu—W), and a carrier wafer (including Si, Ge, GaAs, ZnO, or SiC) - The
conductive support substrate 205 may have a thickness varying according to the design of thelight emitting device 100. - For example, the
conductive support substrate 205 may have a thickness in the range of 50 μm to 300 μm. - The
adhesive layer 204 may be formed on theconductive support substrate 205. Theadhesive layer 204 serves as a bonding layer, and is formed below thereflective layer 160, theprotective layer 140, the second insulatinglayer 504, and thedielectric material 503. Theadhesive layer 204 makes contact with thereflective layer 160, theohmic contact layer 150, the second insulatinglayer 504, and theprotective layer 140, such that thereflective layer 160, theohmic contact layer 150, and theprotective layer 140 are firmly bonded to theconductive support substrate 205. - The
adhesive layer 204 may include barrier metal or bonding metal. For example, theadhesive layer 204 may include at least one selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta. - The
reflective layer 160 may be formed on theadhesive layer 204. Thereflective layer 160 reflects light incident from the light emittingstructure layer 135, so that light extraction efficiency can be improved. - The
reflective layer 160 may include metal including at least one selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or the alloy thereof. In addition, thereflective layer 160 may be formed in a multiple structure by using the metal or the alloy and transmissive conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. For example, thereflective layer 160 may have a stack structure of IZO/Ni, AZO/Ag, IZO/Ag/Ni, or AZO/Ag/Ni. - According to the embodiment, although a top surface of the
reflective layer 150 makes contact with theohmic contact layer 150, thereflective layer 160 may make contact with theprotective layer 140, thecurrent blocking layer 145, the second insulatinglayer 504, or the light emittingstructure layer 135. - The
ohmic contact layer 150 may be formed on thereflective layer 160. Theohmic contact layer 150 makes ohmic contact with the secondconductive semiconductor layer 130 to allow power to be smoothly supplied to the light emittingstructure layer 135. Theohmic contact layer 150 may include at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. - In other words, the
ohmic contact layer 150 may selectively include a transmissive conductive layer or metal. Theohmic contact layer 150 may be formed in a single layer structure or a multiple layer structure by using at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx/ITO, Ni, Ag, Ni/IrOx/Au, and Ni/IrOx/Au/ITO. - According to the embodiment, although the
ohmic contact layer 150 makes contact with a bottom surface and a lateral surface of thecurrent blocking layer 145, theohmic contact layer 150 may be spaced apart from thecurrent blocking layer 145, or may make contact with only the lateral surface of thecurrent blocking layer 145. Theohmic contact layer 150 may be omitted according to embodiments. - The
current blocking layer 145 may be interposed between theohmic contact layer 150 and the secondconductive semiconductor layer 130. The top surface of thecurrent blocking layer 145 makes contact with the secondconductive semiconductor layer 130, and the bottom surface and the lateral surface of thecurrent blocking layer 145 make contact with theohmic contact layer 150. - At least a part of the
current blocking layer 145 may overlap with theelectrode unit 115 perpendicularly to theelectrode unit 115. Accordingly, the concentration of a current onto the shortest path between theelectrode unit 115 and theconductive support substrate 205 can be reduced, so that the light emission efficiency of thelight emitting device 100 can be improved. - The
current blocking layer 145 may include a material having electrical conductivity lower than that of a material constituting thereflective layer 160 or theohmic contact layer 150, a material forming schottky contact with respect to the secondconductive semiconductor layer 130, or a material having an electrical insulating property. For example, thecurrent blocking layer 145 may include at least one selected from the group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO2, SiOx, SiOxNy, Si3N4, Al2O3, TiOx, Ti, Al, and Cr. Thecurrent blocking layer 145 may be omitted according to embodiments. - The
protective layer 140 may be formed at the outer peripheral portion of the top surface of theadhesive layer 204. In other words, theprotective layer 140 may be formed at an outer peripheral portion between the light emittingstructure layer 135 and theadhesive layer 204, and may include an electrical insulating material such as ZnO or SiO2. A part of theprotective layer 140 overlaps with the light emittingstructure layer 135 perpendicularly to the light emittingstructure layer 135. - The
protective layer 140 increases the lateral surface distance between theadhesive layer 204 and theactive layer 120. Accordingly, theprotective layer 140 can reduce the possibility of the electrical short between theadhesive layer 204 and theactive layer 120. - When an isolation etching process is performed to divide the light emitting
structure layer 135 into unit chips in a chip separation process, fragments may be derived from theadhesive layer 204 and attached between the secondconductive semiconductor layer 130 and theactive layer 120, or between theactive layer 120 and the firstconductive semiconductor layer 110, thereby causing electrical short therebetween. In this case, theprotective layer 140 prevents the electrical short. Theprotective layer 140 may include a material that is not broken or fragmented in the isolation etching process, or an electrical insulating material that does not cause electrical short even if an extremely less part of the material is broken or fragmented. Theprotective layer 140 may be omitted according to embodiments. - The light emitting
structure layer 135 may be formed on theohmic contact layer 150 and theprotective layer 140. - The lateral surface of the light emitting
structure layer 135 may be inclined in the isolation etching process to divide the light emittingstructure layer 135 to the unit chips, and a part of the inclined surface overlaps with theprotective layer 140 perpendicularly to theprotective layer 140. - A part of the top surface of the
protective layer 140 may be exposed through the isolation etching process. Accordingly, a part of theprotective layer 140 overlaps with the light emittingstructure layer 135 perpendicularly to the light emittingstructure layer 135, and a remaining part of theprotective layer 140 does not overlap with the light emittingstructure layer 135. - The light emitting
structure layer 135 may include compound semiconductor layers of group III to V elements. For example, the light emittingstructure layer 135 may include the firstconductive semiconductor layer 110, theactive layer 120 below the firstconductive semiconductor layer 110, and the secondconductive semiconductor layer 130 below theactive layer 120. - The first
conductive semiconductor layer 110 may include an N type semiconductor layer. The firstconductive semiconductor layer 110 may include a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1). The firstconductive semiconductor layer 110 may be selected from the group consisting of InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, and InN and may be doped with N type dopants such as Si, Ge, Sn, Se, and Te. The firstconductive semiconductor layer 110 may have a single layer structure or a multiple layer structure, but the embodiment is not limited thereto. - The
active layer 120 emits the light based on the band gap difference of the energy band according to a material constituting theactive layer 120 through the recombination of electrons (or holes) injected through the firstconductive semiconductor layer 110 and holes (or electrons) injected through the secondconductive semiconductor layer 130. - The
active layer 120 may have a single quantum well structure, a multiple quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, but the embodiment is not limited thereto. - The
active layer 120 may include semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1). If theactive layer 120 has the MQW structure, theactive layer 120 may have a stack structure of a plurality of well layers and a plurality of barrier layers. For example, theactive layer 120 may include a stack structure of InGaN well/GaN barrier layers. - A clad layer (not shown) doped with N type dopants or P type dopants may be formed on and/or below the
active layer 120, and the clad layer (not shown) may include an AlGaN layer or an InAlGaN layer. - For example, the second
conductive semiconductor layer 130 may include a P type semiconductor layer. The secondconductive semiconductor layer 130 may include semiconductor material having a compositional formula of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For instance, the secondconductive semiconductor layer 130 may be selected from the group consisting of InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, and InN, and may be doped with P type dopants such as Mg, Zn, Ca, Sr, and Ba. - Meanwhile, the first
conductive semiconductor layer 110 may include a P type semiconductor layer, and the secondconductive semiconductor layer 130 may include an N type semiconductor layer. In addition, a third conductive semiconductor layer (not shown) including an N type semiconductor layer or a P type semiconductor layer may be formed on the secondconductive semiconductor layer 130. Accordingly, the light emitting structure layer may have at least one of NP, PN, NPN, and PNP junction structures. In addition, the doping concentration of impurities in the first and second conductive semiconductor layers 110 and 130 may be uniform or irregular. In other words, the light emitting structure layer may have various structures, and the embodiment is not limited thereto. - The light emitting structure layer including the first
conductive semiconductor layer 110, the secondconductive semiconductor layer 130, and theactive layer 120 may have various modified structures and is not limited to the structure according to the embodiment. - The
electrode unit 115 is formed on the light emittingstructure layer 135. Theelectrode unit 115 may include a pad part subject to a wire bonding scheme and an extension part extending from the pad part. The extension part may have various patterns including a predetermined branch pattern. - A roughness or a
predetermined pattern 112 may be formed on the top surface of the firstconductive semiconductor layer 110. Accordingly, a roughness or a pattern may be formed on the top surface of theelectrode unit 115, but the embodiment is not limited thereto. - The
passivation layer 180 may be formed on at least a lateral surface of the light emittingstructure layer 135. Thepassivation layer 180 may be formed on top surfaces of the firstconductive semiconductor layer 110 and theprotective layer 140, but the embodiment is not limited thereto. - The
passivation layer 180 may electrically protect the light emittingstructure layer 135. - Hereinafter, the method of manufacturing the light emitting device according to the embodiment will be described, and the repeated structures and components will not be further described, or will be briefly described.
-
FIGS. 2 to 16 are views showing the method of manufacturing the light emitting device according to the embodiment. - Referring to
FIG. 2 , the light emittingstructure layer 135 is formed on agrowth substrate 101. Thegrowth substrate 101 may include at least one selected from the group consisting of sapphire (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga2O3, but the embodiment is not limited thereto. - The light emitting
structure layer 135 may be formed by growing the firstconductive semiconductor layer 110, theactive layer 120, and the secondconductive semiconductor layer 130 from thegrowth substrate 101, - For example, the light emitting
structure layer 135 may be formed through MOCVD (Metal Organic Chemical Vapor Deposition), CVD (Chemical Vapor Deposition), PECVD (Plasma-Enhanced Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), or HVPE (Hydride Vapor Phase Epitaxy), but the embodiment is not limited thereto. - A buffer layer (not shown) and/or an undoped nitride layer (not shown) may be formed between the light emitting
structure layer 135 and thegrowth substrate 101 in order to reduce lattice constant mismatch between the light emittingstructure layer 135 and thegrowth substrate 101. - Referring to
FIG. 3 , theprotective layer 140 may be selectively formed on the light emittingstructure layer 135 corresponding to the unit chip region. - The
protective layer 140 may be formed at an outer peripheral portion of the unit chip region by using a mask pattern. Theprotective layer 140 may be formed through various deposition schemes such as a sputtering scheme. - Referring to
FIG. 4 , thecurrent blocking layer 145 may be formed on the secondconductive semiconductor layer 130. Thecurrent blocking layer 145 may be formed by using a mask pattern. - The
protective layer 140 and thecurrent blocking layer 145 may include the same material. In this case, theprotective layer 140 and thecurrent blocking layer 145 are not formed through separate processes, but may be simultaneously formed through one process. For example, after forming a SiO2 layer on the secondconductive semiconductor layer 130, theprotective layer 140 and thecurrent blocking layer 145 may be simultaneously formed by using a mask pattern. - Referring to
FIG. 5 , arecess part 500 is formed by selectively removing the secondconductive semiconductor layer 130, theactive layer 120, and the firstconductive semiconductor layer 110 so that the firstconductive semiconductor layer 110 is exposed. - Referring to
FIG. 6 , the first insulatinglayer 501 is formed in therecess part 500 in such a manner that the firstconductive semiconductor layer 110 is partially exposed. The first insulatinglayer 501 may be formed in such a manner that the bottom surface of therecess part 500 is partially exposed, and may be partially formed on the top surface of the secondconductive semiconductor layer 130. - Referring to
FIG. 7 , thecontact 502 is formed in therecess part 500 having the first insulatinglayer 501. Thecontact 502 makes contact with the firstconductive semiconductor layer 110 and is filled in at least a part of therecess part 500 while making contact with an inner wall of the first insulatinglayer 501. Thecontact 502 may be partially formed on a top surface of the first insulatinglayer 501. - Referring to
FIG. 8 , thedielectric material 503 is formed while making contact with thecontact 502. Thedielectric material 503 is filled in thecontact 502, and at least a part of thedielectric material 503 may be protrude from an upper portion of thecontact 502. - Referring to
FIG. 9 , the second insulatinglayer 504 is formed while surrounding thecontact 502. The secondinsulating layer 504 may make contact with the first insulatinglayer 501 and thedielectric material 503 while surrounding thecontact 502 protruding out of the first insulatinglayer 501. - Referring to
FIGS. 10 and 11 , after forming theohmic contact layer 150 on the secondconductive semiconductor layer 130 and thecurrent blocking layer 145, thereflective layer 160 may be formed on theohmic contact layer 150. - The
ohmic contact layer 150 and thereflective layer 160 may be formed through one of an E-beam deposition scheme, a sputtering scheme, and a PECVD (Plasma Enhanced Chemical Vapor Deposition) scheme. - Referring to
FIGS. 12 and 13 , theconductive support substrate 205 is prepared. - Then, the structure shown in
FIG. 11 is bonded to theconductive support substrate 205 through theadhesive layer 204. - The
adhesive layer 204 is bonded to thereflective layer 160, an end portion of theohmic contact layer 150, the second insulatinglayer 504, and theprotective layer 140, so that inter-layer adhesive strength can be enhanced. - The
conductive support substrate 205 is bonded through theadhesive layer 204. According to the embodiment, although theconductive support substrate 205 is bonded through a boding scheme using theadhesive layer 204, theconductive support substrate 205 may be bonded through a plating scheme or a deposition scheme without theadhesive layer 204. - Referring to
FIG. 14 , thegrowth substrate 101 is removed from the light emittingstructure layer 135.FIG. 14 shows an inverse structure ofFIG. 13 . - The
growth substrate 101 may be removed through a laser lift off scheme or a chemical lift off scheme. - Referring to
FIG. 15 , the light emittingstructure layer 135 is divided into a plurality of light emitting structure layers through an isolation etching process along a unit chip region. For example, the isolation etching process may include a dry etching scheme such as an ICP (Inductively Coupled Plasma) etching scheme. - Referring to
FIG. 16 , after forming thepassivation layer 180 on theprotective layer 140 and the light emittingstructure layer 135, thepassivation layer 180 may be selectively removed to expose the top surface of the firstconductive semiconductor layer 110. - Then, the roughness or the
pattern 112 is formed on the top surface of the firstconductive semiconductor layer 110 in order to improve light extraction efficiency, and theelectrode unit 115 is formed on the roughness or thepattern 112. The roughness or thepattern 112 may be formed through a wet etching process or a dry etching process. - Next, the structure is divided into unit chip regions through a chip separation process, so that a plurality of light emitting
devices 100 can be manufactured. - The chip separation process may include a breaking process to divide chips by applying physical force by using a blade, a laser scribing process to divide chips by irradiating a laser bean into a chip boundary, or an etching process including a wet etching process or a dry etching process, but the embodiment is not limited thereto.
-
FIG. 17 is a view showing a light emittingdevice package 600 including thelight emitting device 100 according to the embodiments. - Referring to
FIG. 17 , the light emittingdevice package 600 according to the embodiment includes abody 200, first andsecond electrodes body 200, thelight emitting device 100 provided on thebody 200 and electrically connected to the first andsecond electrodes molding member 400 that surrounds thelight emitting device 100. - The
body 200 may include silicon, synthetic resin or metallic material. An inclined surface may be formed around thelight emitting device 100. - The first and
second electrodes light emitting device 100. In addition, the first andsecond electrodes light emitting device 100 to improve the light efficiency and dissipate heat generated from thelight emitting device 100 to the outside. - The
light emitting device 100 may be mounted on thebody 200 or may be mounted on thefirst electrode 210 or thesecond electrode 220. - The
light emitting device 100 may be electrically connected to thesecond electrode 220 through awire 300. Thelight emitting device 100 directly makes contact with thefirst electrode 210 so that thelight emitting device 100 may be electrically connected to thefirst electrode 210. - The
molding member 400 surrounds thelight emitting device 100 to protect thelight emitting device 100. In addition, the molding member 40 may include luminescence material to change the wavelength of the light emitted from thelight emitting device 100. - A plurality of light emitting device packages 600 according to the embodiment may be arrayed on a substrate, and an optical member including a light guide plate, a prism sheet, a diffusion sheet, and a fluorescent sheet may be provided on the optical path of the light emitted from the light emitting
device package 600. The light emitting device package, the substrate, and the optical member may serve as a backlight unit or a lighting unit. For instance, the lighting system may include a backlight unit, a lighting unit, an indicator, a lamp or a streetlamp. -
FIG. 18 is a view showing abacklight unit 1100 including the light emitting device or the light emitting device package according to the embodiment. Thebacklight unit 1100 shown inFIG. 18 is an example of a lighting system, but the embodiment is not limited thereto. - Referring to
FIG. 18 , thebacklight unit 1100 includes abottom frame 1140, alight guide member 1120 installed in thebottom frame 1140, and alight emitting module 1110 installed at one side or on the bottom surface of thelight guide member 1120. In addition, areflective sheet 1130 is disposed below thelight guide member 1120. - The
bottom frame 1140 has a box shape having an open top surface to receive thelight guide member 1120, thelight emitting module 1110 and thereflective sheet 1130 therein. In addition, thebottom frame 1140 may include metallic material or resin material, but the embodiment is not limited thereto. - The
light emitting module 1110 may include asubstrate 700 and a plurality of light emitting device packages 600 installed on thesubstrate 700. The light emitting device packages 600 provide the light to thelight guide member 1120. According to thelight emitting module 1110 of the embodiment, the light emitting device packages 600 are installed on thesubstrate 700. However, it is also possible to directly install thelight emitting device 100 according to the embodiment. - As shown in
FIG. 18 , thelight emitting module 1110 is installed on at least one inner side of thebottom frame 1140 to provide the light to at least one side of thelight guide member 1120. - In addition, the
light emitting module 1110 can be provided below thebottom frame 1140 to provide the light toward the bottom surface of thelight guide member 1120. Such an arrangement can be variously changed according to the design of thebacklight unit 1100, but the embodiment is not limited thereto. - The
light guide member 1120 is installed in thebottom frame 1140. Thelight guide member 1120 converts the light emitted from thelight emitting module 1110 into the surface light to guide the surface light toward a display panel (not shown). - The
light guide member 1120 may include a light guide plate. For instance, the light guide plate can be manufactured by using acryl-based resin, such as PMMA (polymethyl methacrylate), PET (polyethylene terephthalate), PC (polycarbonate), COC or PEN (polyethylene naphthalate) resin. - An
optical sheet 1150 may be provided over thelight guide member 1120. - The
optical sheet 1150 may include at least one of a diffusion sheet, a light collection sheet, a brightness enhancement sheet, and a fluorescent sheet. For instance, theoptical sheet 1150 has a stack structure of the diffusion sheet, the light collection sheet, the brightness enhancement sheet, and the fluorescent sheet. In this case, the diffusion sheet uniformly diffuses the light emitted from thelight emitting module 1110 such that the diffused light can be collected on the display panel (not shown) by the light collection sheet. The light output from the light collection sheet is randomly polarized and the brightness enhancement sheet increases the degree of polarization of the light output from the light collection sheet. The light collection sheet may include a horizontal and/or vertical prism sheet. In addition, the brightness enhancement sheet may include a dual brightness enhancement film and the fluorescent sheet may include a transmissive plate or a transmissive film including luminescence material. - The
reflective sheet 1130 can be disposed below thelight guide member 1120. Thereflective sheet 1130 reflects the light, which is emitted through the bottom surface of thelight guide member 1120, toward the light exit surface of thelight guide member 1120. - The
reflective sheet 1130 may include resin material having high reflectivity, such as PET, PC or PVC resin, but the embodiment is not limited thereto. -
FIG. 19 is a perspective view showing alighting unit 1200 including the light emitting device or the light emitting device package according to the embodiment. Thelighting unit 1200 shown inFIG. 19 is an example of a lighting system and the embodiment is not limited thereto. - Referring to
FIG. 19 , thelighting unit 1200 includes acase body 1210, alight emitting module 1230 installed in thecase body 1210, and aconnection terminal 1220 installed in thecase body 1210 to receive power from an external power source. - Preferably, the
case body 1210 includes material having superior heat dissipation property. For instance, thecase body 1210 includes metallic material or resin material. - The
light emitting module 1230 may include asubstrate 700 and at least one light emittingdevice package 600 installed on thesubstrate 700. In thelight emitting module 1230 according to the embodiment, the light emittingdevice package 600 is installed on thesubstrate 700. However, it is also possible to directly install thelight emitting device 100 according to the embodiment. - The
substrate 700 includes an insulating member printed with a circuit pattern. For instance, thesubstrate 700 includes a PCB (printed circuit board), an MC (metal core) PCB, a flexible PCB, or a ceramic PCB. - In addition, the
substrate 700 may include material that effectively reflects the light. The surface of thesubstrate 700 can be coated with a color, such as a white color or a silver color, to effectively reflect the light. - At least one light emitting
device package 600 according to the embodiment can be installed on thesubstrate 700. Each light emittingdevice package 600 may include at least one LED (light emitting diode). The LED may include a colored LED that emits the light having the color of red, green, blue or white and a UV (ultraviolet) LED that emits UV light. - The LEDs of the
light emitting module 1230 can be variously arranged to provide various colors and brightness. For instance, the white LED, the red LED and the green LED can be arranged to achieve the high color rendering index (CRI). In addition, a fluorescent sheet can be provided in the path of the light emitted from thelight emitting module 1230 to change the wavelength of the light emitted from thelight emitting module 1230. For instance, if the light emitted from thelight emitting module 1230 has a wavelength band of blue light, the fluorescent sheet may include yellow luminescent material. In this case, the light emitted from thelight emitting module 1230 passes through the fluorescent sheet so that the light is viewed as white light. - The
connection terminal 1220 is electrically connected to thelight emitting module 1230 to supply power to thelight emitting module 1230. Referring toFIG. 19 , theconnection terminal 1220 has a shape of a socket screw-coupled with the external power source, but the embodiment is not limited thereto. For instance, theconnection terminal 1220 can be prepared in the form of a pin inserted into the external power source or connected to the external power source through a wire. - According to the lighting system as described above, at least one of the light guide member, the diffusion sheet, the light collection sheet, the brightness enhancement sheet and the fluorescent sheet is provided in the path of the light emitted from the light emitting module, so that the desired optical effect can be achieved.
- As described above, the lighting system includes the light emitting device or the light emitting device package representing superior electrical stability so that superior electrical reliability can be represented.
- Any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to effects such feature, structure, or characteristic in connection with other ones of the embodiments.
- Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.
Claims (13)
1. A light emitting device comprising:
a light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers;
a conductive support substrate electrically connected to the second conductive semiconductor layer;
a contact electrically connected to the first conductive semiconductor layer;
a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate; and
an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.
2. The light emitting device of claim 1 , further comprising an electrode unit on the first conductive semiconductor layer.
3. The light emitting device of claim 1 , further comprising an adhesive layer interposed between the dielectric material and the conductive support substrate.
4. The light emitting device of claim 3 , wherein the insulating layer includes a first insulating layer formed between the contact and the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and a second insulating layer formed between the contact and the adhesive layer.
5. The light emitting device of claim 4 , wherein the first insulating layer makes contact with the second insulating layer.
6. The light emitting device of claim 1 , wherein the contact surrounds a lateral surface of at least a part of the dielectric material.
7. The light emitting device of claim 1 , wherein the insulating layer includes at least one selected from the group consisting of SiO2, Si3N4, Al2O3, and TiOx.
8. The light emitting device of claim 1 , wherein the contact includes a material making ohmic contact with respect to the first conductive semiconductor layer.
9. The light emitting device of claim 8 , wherein the contact includes at least one selected from the group consisting of Cr, T and Al.
10. The light emitting device of claim 1 , wherein the dielectric material includes at least one selected from the group consisting of SiO2, Si3N4, Al2O3, TiOx, HfOx, BST, and silicon.
11. The light emitting device of claim 1 , wherein a roughness or a predetermined pattern is formed on the top surface of the first conductive semiconductor layer.
12. The light emitting device of claim 10 , wherein the dielectric material is doped with impurities.
13. The light emitting device of claim 1 , wherein the dielectric material makes contact with the insulating layer.
Priority Applications (1)
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US13/453,531 US8450762B2 (en) | 2010-02-04 | 2012-04-23 | Light emitting device |
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KR20100010246A KR100974787B1 (en) | 2010-02-04 | 2010-02-04 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
KR10-2010-0010246 | 2010-02-04 |
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US13/453,531 Continuation US8450762B2 (en) | 2010-02-04 | 2012-04-23 | Light emitting device |
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US20110186892A1 true US20110186892A1 (en) | 2011-08-04 |
Family
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US13/014,080 Abandoned US20110186892A1 (en) | 2010-02-04 | 2011-01-26 | Light emitting device |
US13/453,531 Active US8450762B2 (en) | 2010-02-04 | 2012-04-23 | Light emitting device |
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US13/453,531 Active US8450762B2 (en) | 2010-02-04 | 2012-04-23 | Light emitting device |
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US (2) | US20110186892A1 (en) |
EP (1) | EP2355177B1 (en) |
KR (1) | KR100974787B1 (en) |
CN (1) | CN102148306B (en) |
TW (1) | TWI479693B (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN102148306A (en) | 2011-08-10 |
KR100974787B1 (en) | 2010-08-06 |
EP2355177A3 (en) | 2014-12-10 |
CN102148306B (en) | 2013-11-06 |
EP2355177A2 (en) | 2011-08-10 |
EP2355177B1 (en) | 2019-12-04 |
US8450762B2 (en) | 2013-05-28 |
TWI479693B (en) | 2015-04-01 |
TW201135978A (en) | 2011-10-16 |
US20120205711A1 (en) | 2012-08-16 |
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