US20100225425A1 - High performance coupled coplanar waveguides with slow-wave features - Google Patents

High performance coupled coplanar waveguides with slow-wave features Download PDF

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Publication number
US20100225425A1
US20100225425A1 US12/400,133 US40013309A US2010225425A1 US 20100225425 A1 US20100225425 A1 US 20100225425A1 US 40013309 A US40013309 A US 40013309A US 2010225425 A1 US2010225425 A1 US 2010225425A1
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Prior art keywords
coplanar waveguide
slot
waveguide structure
lines
strips
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English (en)
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Shu-Ying Cho
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Priority to US12/400,133 priority Critical patent/US20100225425A1/en
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHO, SHU-YING
Priority to CN2009101411221A priority patent/CN101834330B/zh
Priority to TW098140064A priority patent/TWI395369B/zh
Priority to KR1020100008025A priority patent/KR101158189B1/ko
Priority to JP2010051833A priority patent/JP5042327B2/ja
Publication of US20100225425A1 publication Critical patent/US20100225425A1/en
Priority to US13/542,312 priority patent/US8629741B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/003—Coplanar lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/2013—Coplanar line filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • IC semiconductor integrated circuit
  • functional density i.e., the number of interconnected devices per chip area
  • geometry size i.e., the smallest component (or line) that can be created using a fabrication process
  • This scaling down process generally provides benefits by increasing production efficiency and lowering associated costs.
  • Such scaling-down has also emphasized the importance of managing the transmission of radio frequency signals within such ICs.
  • Coplanar waveguide (CPW) structures are often utilized for such transmission, however, it has been observed that conventional CPW structure performance degrades as the transmission frequency increases.
  • the performance of conventional CPW structures is less than desirable as electromagnetic wavelength increases.
  • the electromagnetic wavelength in a SiO 2 dielectric material is 3000 ⁇ m at 50 GHz, which is area-consuming for the application of impedance matching networks of quarter-wavelength long transmission lines.
  • conventional CPW structures currently provide no shield between a signal line and an underlying substrate, and low-loss CPW structures on a silicon substrate are designed and optimized using a thick dielectric layer, which conflicts with advanced CMOS processing. Accordingly, what is needed is a device that addresses the above stated issues.
  • FIGS. 1A-1C illustrate a perspective view, a top view, and an equivalent circuit of an embodiment of a coplanar waveguide structure, respectively.
  • FIG. 2 illustrates a perspective view of an embodiment of a coplanar waveguide structure.
  • FIGS. 3A-3D and 4 A- 4 C illustrate top views of a coplanar waveguide structure according to various embodiments.
  • FIGS. 5A-5D illustrate a transverse cross-sectional view of a device including a coplanar waveguide structure according to various embodiments.
  • FIGS. 6A-6C , 7 A- 7 D, 8 A- 8 F, 9 A- 9 D, and 10 A- 10 F illustrate perspective views of a coplanar waveguide structure according to various embodiments.
  • FIGS. 11-24 illustrate perspective views of a device including a coplanar waveguide structure according to various embodiments.
  • the present disclosure relates generally to devices including coplanar waveguide structures, and more particularly, to devices including coupled coplanar waveguide structures.
  • first and second features are formed in direct contact
  • additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
  • present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
  • FIG. 1 illustrates a perspective view of one embodiment of a coplanar waveguide structure 1 .
  • the coplanar waveguide structure 1 comprises one or more conductor lines 2 , 4 a, 4 b.
  • the conductor line 2 is a signal line.
  • the signal line 2 lies between the one or more conductor lines 4 a, 4 b.
  • the one or more conductor lines 4 a, 4 b are relatively static lines (collectively referred to as relatively static lines 4 ).
  • the signal line 2 may be coupled to a wave source.
  • the wave source may be any suitable frequency.
  • the wave source may include a radio frequency signal source and/or consumer, such as a transmitter, a transceiver, or an antenna.
  • the signal line 2 carries a radio frequency signal along its length.
  • the signal line may be designed to carry a radio frequency signal in the microwave and/or millimeter range (for example, frequencies between about 300 MHz and about 300 GHz).
  • the relatively static lines 4 may be electrically coupled to ground, and thus, the relatively static lines 4 may also be referred to as ground lines.
  • one or more of the relatively static lines 4 may be coupled to an AC or DC voltage source, including a reference voltage source.
  • Signal line 2 is composed of any material capable of propagating a radio frequency signal.
  • Ground lines 4 are composed of any material capable of shielding.
  • the signal line 2 and/or ground lines 4 may comprise metal, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • the signal line 2 may comprise the same or different material as the ground lines 4
  • the ground line 4 a may comprise the same or different material as the ground line 4 b .
  • a region between the signal lines 2 and the ground lines 4 may comprise a dielectric or other suitable material.
  • Signal line 2 and ground lines 4 are oriented substantially parallel to one another in a longitudinal direction.
  • Signal line 2 and ground lines 4 extend longitudinally a substantially uniform distance L, and signal line 2 /ground lines 4 have a substantially uniform height H.
  • signal line 2 /ground lines 4 may extend longitudinally varying distances L, and signal line 2 /ground lines 4 may have varying heights H.
  • the signal line 2 may extend a first distance
  • the ground lines 4 may extend a second distance.
  • the ground line 4 a may extend a first distance
  • ground line 4 b may extend a second distance.
  • Each ground line 4 has a width W g .
  • ground line width W g may be the same or different for each ground line 4 .
  • the dimensions of the signal line 2 varies along a longitudinal axis (in the present embodiment, a z-axis).
  • the variation in dimensions of the signal line 2 forms a periodic structure in the signal line 2 .
  • the signal line 2 includes alternating segments, a first segment 5 and a second segment 6 , which form the periodic structure.
  • the first segment 5 comprises a width W and a length D S .
  • the second segment 6 extends outwardly, horizontally on either side of the signal line 2 towards ground lines 4 , making the second segment 6 wider than the first segment 5 .
  • the second segment 6 may form a rectangular shape, an elliptical shape, a semi-circular shape, a triangular shape, other suitable shape, and/or combinations thereof.
  • the second segment 6 forms a rectangular shape having a length D L and a width D W . It is understood that the second segment 6 may have different dimensions. It is further understood that, in some embodiments, the second segment 6 may extend inwardly, horizontally on either side of the signal line 2 towards the center of signal line 2 . In some embodiments, the second segment 6 may extend from only one side of the signal line 2 .
  • the periodic structure in signal line 2 repeats with a period of D S +D L .
  • the signal line 2 may have a nonperiodic structure, or it may have a structure that includes more or fewer segments.
  • the dimensions of the coplanar waveguide structure 1 may be selected to provide a desired signal characteristic, for example, a desired phase velocity as described below.
  • the dimensions W, D S , D L , and D W may each be between about 0.1 ⁇ m and about 8 ⁇ m.
  • the coplanar waveguide structure 1 may be modeled using a series of equivalent circuits. For each differential unit length dz, the coplanar waveguide structure 1 may be treated as if it were comprised of an equivalent circuit, such as the equivalent circuit illustrated in FIG. 1C .
  • the equivalent circuit has an inductance per unit length L and a capacitance per unit length C.
  • the equivalent circuit may also have a resistance per unit length R and a conductance per unit length G.
  • the coplanar waveguide structure 1 may be described using line parameters based on electric circuit concepts.
  • the values of L, R, C, and G may be determined from the physical characteristics of the coplanar waveguide structure 1 , including its physical dimensions and material composition.
  • the phase velocity V p of a wave traveling along the signal line may be expressed as:
  • the materials for the coplanar waveguide may be chosen to provide a desired relative permittivity and permeability.
  • the coplanar waveguide structure may be dimensioned to provide the desired inductance and capacitance using the structures disclosed herein.
  • the periodic structure comprising alternating segments 5 , 6 , provides alternating respective high and low impedance sections as illustrated in the equivalent circuit shown in FIG. 1C . If the alternating high and low impedance sections are short in length compared to the wavelength, and the alternating segments are cascaded together, the inductance is dominated by the high impedance section, and the capacitance is dominated by the low impedance section.
  • the present embodiment provides a higher permittivity epsilon ⁇ r and lower phase velocity speed V p as compared to conventional coplanar waveguide structures.
  • the periodical structure within the signal line 2 essentially provides the ability to have a higher permittivity epsilon and adjust the wavelength. Accordingly, the permittivity epsilon ⁇ r can be varied by different coplanar waveguide structures, such as the various embodiments presented herein.
  • Such higher epsilon coplanar waveguide structures may be incorporated into microwave and millimeter wave integrated circuits, such as circuit impedance matching circuits of the quarter wavelength long transmission line, GPS satellite systems, greater than 2 GHz PDA cell phones, and UWB wireless communication.
  • FIG. 2 illustrates a perspective view of one embodiment of a coplanar waveguide structure 10 .
  • the coplanar waveguide structure 10 comprises one or more conductor lines 12 a, 12 b, 14 a, 14 b .
  • the one or more conductor lines 12 a, 12 b are signal lines (collectively referred to as signal lines 12 ).
  • the signal lines 12 lie between the one or more conductor lines 14 a, 14 b .
  • the one or more conductor lines 14 a, 14 b are relatively static lines (collectively referred to as relatively static lines 14 ).
  • the signal lines 12 may be coupled to a wave source.
  • the wave source may be any suitable frequency.
  • the wave source may include a radio frequency signal source and/or consumer, such as a transmitter, a transceiver, or an antenna.
  • the signal lines 12 carry a radio frequency signal along their length.
  • the signal lines may be designed to carry a radio frequency signal in the microwave and/or millimeter range (for example, frequencies between about 300 MHz and about 300 GHz).
  • the relatively static lines 14 may be electrically coupled to ground, and thus, the relatively static lines 14 may also be referred to as ground lines.
  • one or more of the relatively static lines 14 may be coupled to an AC or DC voltage source, including a reference voltage source.
  • Signal lines 12 are composed of any material capable of propagating a radio frequency signal.
  • Ground lines 14 are composed of any material capable of shielding.
  • the signal lines 12 and/or ground lines 14 may comprise metal, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • the signal lines 12 may comprise the same or different material as the ground lines 14
  • the signal line 12 a may comprise the same or different material as the signal line 12 b
  • the ground line 14 a may comprise the same or different material as the ground line 14 b
  • Regions between the signal lines 12 and ground lines 14 may be insulating regions, low-k dielectric regions, high-k dielectric regions, other suitable dielectric regions, other suitable regions, and/or combinations thereof.
  • the regions between the signal lines 12 and the ground lines 14 may comprise a dielectric or other suitable material.
  • the regions between the signal lines 12 and ground lines 14 may comprise varying materials and/or compositions.
  • Signal lines 12 and ground lines 14 are oriented substantially parallel to one another in a longitudinal direction.
  • Signal lines 12 and ground lines 14 extend longitudinally a substantially uniform distance L, and signal lines 12 /ground lines 14 have a substantially uniform height H.
  • signal lines 12 /ground lines 14 may extend longitudinally varying distances L, and signal lines 12 /ground lines 14 may have varying heights H.
  • the signal lines 12 may extend a first distance
  • the ground lines 14 may extend a second distance.
  • the signal line 12 a may extend a first distance
  • signal line 12 b may extend a second distance.
  • each signal line 12 a, 12 b is a distance S from a ground line 14 a, 14 b .
  • the distance S may be any suitable distance.
  • Each ground line 14 has a width W g .
  • the ground line width W g may be the same or different for each ground line 14 .
  • the dimensions of the signal lines 12 vary along a longitudinal axis (in the present embodiment, a z-axis).
  • the variation in dimensions of the signal lines 12 form a periodic structure in the signal lines 12 .
  • the signal lines 12 include alternating segments, a first segment 16 and a second segment 18 , which form the periodic structure.
  • the first segment 16 comprises a width W and a length D S .
  • the width W may be the same or different for each signal line 12 .
  • the second segment 18 extends outwardly, horizontally on either side of the signal lines 12 towards ground lines 14 , making the second segment 18 wider than the first segment 16 .
  • the second segment 18 extending outwardly, may form a rectangular shape, an elliptical shape, a semi-circular shape, a triangular shape, other suitable shape, and/or combinations thereof.
  • the second segment 18 forms a rectangular shape having a length D L and a width D W . It is understood that the second segment 18 may have different dimensions.
  • the second segment 18 may extend inwardly, horizontally on either side of the signal lines 12 towards the center of signal lines 12 .
  • the second segment 18 may extend from only one side of the signal lines 12 .
  • the first segment 16 may be wider than the second segment 18 .
  • the periodic structure in signal line 12 repeats with a period of D S +D L .
  • the signal line 12 may have a nonperiodic structure, or it may have a structure that includes more or fewer segments.
  • the periodic structures in the signal lines 12 provide a higher permittivity epsilon and result in an adjusting wavelength.
  • the dimensions of the coplanar waveguide structure 10 may be selected to provide a desired signal characteristic, for example, a desired phase velocity as described above.
  • the dimensions W, D S , D L , and D W may each be between about 0.1 ⁇ m and about 8 ⁇ m.
  • FIGS. 3A-3D and FIGS. 4A-4C illustrate top views of various embodiments of coplanar waveguide structures comprising periodic structures.
  • FIG. 3A illustrates a coplanar waveguide structure 30 comprising signal lines 32 similar to the signal lines 12 described above.
  • the signal lines 32 include alternating segments, first segments 33 and second segments 34 .
  • the second segments 34 are wider than the first segments 33 and extend outwardly in a semi-circular shape toward ground lines 35 .
  • FIG. 3B illustrates another embodiment of a coplanar waveguide structure 40 comprising signal lines 42 with first segments 43 and second segments 44 .
  • the second segments 44 extend outwardly toward ground lines 45 , providing second segments 44 with generally triangular-shaped extensions.
  • the ground lines may include a periodic structure or otherwise irregular shaped structure.
  • FIG. 3C illustrates a coplanar waveguide structure 50 comprising signal lines 52 similar to signal lines 12 described above.
  • the signal lines 52 include alternating segments, first segments 53 and second segments 54 , that extend outwardly toward ground lines 55 a, 55 b to form rectangular-shaped extensions.
  • the second segments 54 are wider than the first segments 53 .
  • the ground lines 55 a, 55 b are substantially uniform in width.
  • the ground lines 55 a, 55 b include a first portion 56 where the distance between the signal lines 52 and the ground lines 55 a, 55 b is relatively small, and a second portion 57 where the distance between the signal lines 52 and the ground lines 55 a, 55 b is relatively large.
  • FIG. 3C illustrates the first portions of ground lines 55 a, 55 b as coinciding at a longitudinal position along the length of the coplanar waveguide structure 50 .
  • the second portions of ground lines 55 a, 55 b are similarly depicted as coinciding. That is, the ground line 55 a is a substantially mirror image of the ground line 55 b reflected across a plane that bisects the signal line lengthwise.
  • the first portion of ground line 55 a may coincide with the second portion of ground line 55 b.
  • the ground line 55 a may be a substantially mirror image of ground line 55 b that has been longitudinally shifted. In still other embodiments, the ground line 55 a may have a form that is unrelated to the form of ground line 55 b.
  • FIG. 3C illustrates ground lines 55 a, 55 b as having curved sides, the sides of ground lines 55 a, 55 b may also be square, angled, or any other shape or combination of shapes.
  • FIG. 3D illustrates a coplanar waveguide structure 60 comprising signal lines 62 similar to signal lines 12 described above.
  • the signal lines 62 include alternating segments, first segments 63 and second segments 64 , that extend outwardly toward ground lines 65 to form semi-circular shaped extensions.
  • the second segments 64 are wider than the first segments 63 .
  • the ground lines 65 comprise one or more segments 66 that have a substantially similar cross-sectional shape.
  • the one or more segments 66 are coupled to one another by an interconnect that may be in the same or a different layer, wherein the interconnect may be a metal interconnect.
  • the one or more segments may comprise any suitable material.
  • the segments 66 may comprise two or more different materials, such as one or more of the segments 66 comprising a conductive material and one or more of the segments 66 comprising nonconductive material.
  • the segments may be composed of the same material as the signal lines 62 .
  • FIGS. 4A-4C show coplanar waveguide structures 70 , 80 , 90 comprising one or more signal lines 72 , 82 , 92 and one or more ground lines 75 , 85 , 95 having periodic structures similar to the signal lines and ground lines described above.
  • the signal lines 72 include alternating segments, first segments 73 and second segments 74 .
  • the second segments 74 are wider than the first segments 73 and extend outwardly in a semi-circular shape toward ground lines 75 .
  • the ground lines 75 also include alternating segments, first segments 76 and second segments 77 .
  • the second segments 77 are wider than the first segments 76 and similarly extend outwardly in a semi-circular shape.
  • the signal lines 82 and the ground lines 85 comprise alternating segments, first segments 83 , 86 and second segments 84 , 87 .
  • the second segments 84 , 87 are wider than the first segments 83 , 86 and extend outwardly in a triangular shape.
  • the signal lines 92 and the ground lines 95 comprise alternating segments, first segments 93 , 96 and second segments 94 , 97 .
  • the second segments 94 , 97 are wider than the first segments 93 , 96 .
  • the second segments 94 of the signal lines 92 extend outwardly in a semi-circular shape, and the second segments 97 of the ground lines 95 extend outwardly in a triangular shape.
  • the device 100 includes a lower substrate 102 and an upper substrate 104 including one or more low-k dielectric layers 106 and coplanar waveguide portions 108 .
  • the lower substrate 102 may comprise any suitable material and any suitable thickness.
  • the lower substrate 102 comprises a semiconductor substrate, such as a silicon substrate.
  • the lower substrate 102 may comprise an elementary semiconductor including silicon or germanium in crystal, polycrystalline, or an amorphous structure; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and GaInAsP; any other suitable material; and/or combinations thereof.
  • the alloy semiconductor substrate may have a gradient SiGe feature in which the Si and Ge composition change from one ratio at one location to another ratio at another location of the gradient SiGe feature.
  • the alloy SiGe is formed over a silicon substrate.
  • a SiGe substrate is strained.
  • the substrate may be a semiconductor on insulator (SOI) or a thin film transistor (TFT).
  • the semiconductor substrate may include a doped epi layer or a buried layer.
  • the compound semiconductor substrate may have a multilayer structure, or the silicon substrate may include a multilayer compound semiconductor structure.
  • the lower substrate 102 may comprise glass.
  • the lower substrate 102 may include multiple layers comprising the same or varying materials.
  • the lower substrate 102 may further include various doping configurations depending on design requirements as known in the art (e.g., p-type substrate regions or n-type substrate regions).
  • the lower substrate 102 may include doped regions. It is understood that the lower substrate 102 may comprise partially or fully fabricated devices, structures, and or features known in the art, including but not limited to gate structures, source/drain regions, lightly doped regions, shallow trench isolations, transistors, diodes, vias, trenches, various contacts/vias and multilayer interconnect features (e.g., metal layers and interlayer dielectrics), other features, and/or combinations thereof.
  • the upper substrate 104 may comprise any suitable material and any suitable thickness.
  • the upper substrate 104 may comprise one or more insulating layers.
  • the upper substrate 104 comprises a dielectric material, such as TEOS oxide, silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, zirconium oxide, titanium oxide, aluminum oxide, hafnium dioxide-alumina (HfO 2 —Al 2 O 3 ) alloy, PSG, BPSG, other suitable dielectric materials, and/or combinations thereof.
  • the upper substrate 104 may comprise a high-k dielectric material, which may include metal oxides, metal nitrides, metal silicates, transition metal-oxides, transition metal-nitrides, transition metal-silicates, oxynitrides of metals, metal aluminates, zirconium silicate, zirconium aluminate, HfO 2 , HfSiO, HfSiON, HfTaO, HfTaTiO, HfTiO, HfZrO, HfAlON, other suitable high-k dielectric materials, and/or combinations thereof.
  • a high-k dielectric material may include metal oxides, metal nitrides, metal silicates, transition metal-oxides, transition metal-nitrides, transition metal-silicates, oxynitrides of metals, metal aluminates, zirconium silicate, zirconium aluminate, HfO 2 , HfSiO, Hf
  • the upper substrate may comprise a low-k dielectric material, such as fluorinated silica glass (FSG), carbon doped silicon oxide, Black Diamond® (Applied Materials of Santa Clara, Calif.), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), SiLK (Dow Chemical, Midland, Mich.), polyimide, other proper porous polymeric materials, and/or combinations thereof.
  • FSG fluorinated silica glass
  • carbon doped silicon oxide Black Diamond® (Applied Materials of Santa Clara, Calif.)
  • Black Diamond® Applied Materials of Santa Clara, Calif.
  • Xerogel Applied Materials of Santa Clara, Calif.
  • Aerogel amorphous fluorinated carbon
  • Parylene Parylene
  • BCB bis-benzocyclobutenes
  • SiLK Low Chemical, Midland, Mich.
  • polyimide other proper porous polymeric materials, and/or combinations thereof.
  • the upper substrate 104 may include a multilayer structure, wherein each layer comprises the same or varying materials, such as varying dielectric and metal materials. It is further understood that additional layers may be formed overlying and/or underlying the upper substrate 104 .
  • the upper substrate 104 includes the one or more low-k dielectric layers 106 and coplanar waveguide portions 108 .
  • the one or more low-k dielectric layers 106 may comprise any suitable dielectric material, such as the materials described above and/or dielectric materials with a dielectric constant of less than about 3.9.
  • the one or more low-k dielectric layers 106 may comprise any suitable thickness.
  • the one or may low-k dielectric layers 106 and coplanar waveguide portions 108 may be included at any suitable location in the upper substrate 104 .
  • the low-k dielectric layer 106 may be formed below the coplanar waveguide portions 108 as illustrated in FIG. 5A
  • the low-k dielectric layer 106 may be formed above the coplanar waveguide portions 108 as illustrated in FIG. 5B
  • one or more low-k dielectric layers 106 may be formed above and below the coplanar waveguide portions 108 as illustrated in FIG. 5C
  • the coplanar waveguide portions 108 may be formed in the low-k dielectric layer 106 as illustrated in FIG. 5D .
  • the coplanar waveguide portions 108 may be included at locations other than those illustrated, and such locations are not limited by FIGS. 5A-5D .
  • the coplanar waveguide portions 108 collectively form a coplanar waveguide structure.
  • the coplanar waveguide structure may be similar to the coplanar waveguide structures described herein.
  • the coplanar waveguide portions 108 may comprise signal lines and ground lines.
  • portions of the upper substrate 104 lie between the coplanar waveguide portions 108 ; however, it is understood that, in alternate embodiments, other suitable regions may lie between the coplanar waveguide portions, such as insulating regions, low-k dielectric regions, high-k dielectric regions, other suitable dielectric regions, other suitable regions, and/or combinations thereof.
  • the coplanar waveguide portions 108 may comprise any suitable material and any suitable thickness.
  • the coplanar waveguide portions 108 may comprise a metal, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • a metal such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • FIGS. 6A-6C show perspective views of various embodiments of a coplanar waveguide structure 200 , wherein the coplanar waveguide structure 200 includes one or more islands. Introducing the one or more islands into the coplanar waveguide structure 200 increases the permittivity epsilon and results in an adjusting wavelength.
  • the coplanar waveguide structure 200 comprises one or more signal lines 202 , one or more ground lines 204 , and one or more islands 206 .
  • the signal lines 202 and ground lines 204 are similar to the signal lines and ground lines discussed above.
  • the signal lines 202 comprise a periodic structure comprising first segments 203 a and second segments 203 b, the second segments 203 a forming rectangular-shaped extensions.
  • the signal lines 202 may comprise any suitable periodic structure, and each of the signal lines 202 may comprise the same periodic structure, varying periodic structures, or no periodic structure.
  • signal lines 202 are disposed between ground lines 204 , and one or more islands 206 are disposed between each of the signal lines 202 and each of the ground lines 204 .
  • the islands 206 coincide with the second segments 203 b of the periodic structure in signal lines 202 .
  • the coplanar waveguide structure 200 has islands 206 at periodic intervals along its length
  • the signal lines 202 have second segments 203 b at periodic intervals along its length (as discussed in further detail above)
  • the period of the islands 206 is equal to the period of the second segments 203 b of the periodic structure in signal lines 202 .
  • the islands 206 may coincide with the first segments 203 a of the periodic structure in signal lines 202 .
  • the islands 206 may be at intervals that do not correspond to the periodic structure of the signal lines 202 .
  • FIG. 6B is similar to FIG. 6A and additionally includes one or more islands 206 disposed between the signal lines 202 at periodic intervals along the length of the coplanar waveguide structure 200 .
  • FIG. 6B is similar to FIG. 6A and additionally includes one or more islands 206 disposed between the signal lines 202 at periodic intervals along the length of the coplanar waveguide structure 200 .
  • FIG. 6C is similar to FIG. 6A and additionally includes one or more ground lines 204 disposed between the signal lines 202 . It is understood that the coplanar waveguide structure 200 is not limited by FIGS. 6A-6C and may comprise any combination and configuration of signal lines 202 , ground lines 204 , and islands 206 .
  • the one or more of the islands 206 may be electrically intercoupled and/or electrically isolated from one another; electrically coupled to one or more of the signal lines 202 , one or more of the ground lines 204 , and/or a reference voltage or signal; completely electrically isolated; and/or combinations thereof. Where one or more islands 206 are electrically coupled, the electrical coupling may be through an interconnect or via. Further, the signal lines 202 , ground lines 204 , and islands 206 may be any suitable distance from one another. For example, the islands 206 may be closer to the signal lines 202 than to the ground lines 204 , closer to the ground lines 204 than to the signal lines 202 , or equidistant to the nearest signal line 202 and the nearest ground line 206 . In some embodiments, some islands 206 may be closer to the signal lines 202 than some other islands 206 . That is, the distance between the signal lines 202 and the islands 206 may vary over the length of the coplanar waveguide structure 200 .
  • the islands 206 may be referred to as conductive pillars.
  • the islands 206 may comprise any suitable shape, such as a rectangular shape, a circular shape, an elliptical shape, a triangular shape, other suitable shape, and/or combinations thereof.
  • the islands 206 comprise quadrilateral frusta, rectangular prisms, elliptic cylinders, circular cylinders, or combinations thereof.
  • the islands 206 may be substantially uniform in form and dimension, or the islands 206 may vary in form, dimension, or both.
  • the islands 206 may have a uniform composition or a varied composition.
  • the islands 206 may comprise any material, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof. In other embodiments, some or all of the islands 206 may comprise a dielectric material. It is understood that each of the one or more islands 206 may comprise the same material or different materials. Further, the islands 206 may be composed of the same or a different material as the signal lines 202 and/or ground lines 204 . In some embodiments, all the islands 206 are composed of the same material as the signal lines 202 .
  • FIGS. 7A-7D show perspective views of various embodiments of a coplanar waveguide structure 300 , wherein the coplanar waveguide structure 300 includes one or more floating strips above and/or beneath the signal lines/ground lines including periodic structures. Combining the one or more floating strips with the one or more signal lines/ground lines having periodic structures increases the permittivity epsilon and results in an adjustable wavelength.
  • the coplanar waveguide structure 300 includes a first layer comprising one or more signal lines 302 and one or more ground lines 304 and a second layer comprising one or more floating strips 308 .
  • the signal lines 302 and ground lines 304 are similar to the signal lines 12 and ground lines 14 previously described with respect to FIG. 2 .
  • At least one of the one or more signal lines 302 includes a periodic structure.
  • at least one of the one or more ground lines 304 includes a periodic structure.
  • the first layer may be separated from the second layer by a dielectric layer or other suitable material.
  • the second layer comprising the one or more floating strips 308 may be located below the first layer comprising the signal lines 302 /ground lines 304 as illustrated in FIGS. 7A , 7 B or above the first layer comprising the signal lines 302 /ground lines 304 as illustrated in FIGS. 7C , 7 D.
  • the coplanar waveguide structure 300 may include two second layers comprising one or more floating strips 308 , one located above the first layer and the other located below the first layer.
  • the coplanar waveguide structure 300 may include multiple second layers comprising one or more floating strips 308 above and/or below the first layer. Regions between the various layers and features of the coplanar waveguide structures may be insulating regions, low-k dielectric regions, high-k dielectric regions, other suitable dielectric regions, other suitable regions, and/or combinations thereof. In some embodiments, the regions between the various layers and features may comprise varying materials and/or compositions.
  • the floating strips 308 may extend across substantially the entire width of the coplanar waveguide structure 300 or a portion of the width of the coplanar waveguide structure 300 . Further, the floating strips 308 may be at periodic intervals along the length of the coplanar waveguide structure 300 . If at such periodic intervals, the floating strips 308 may disposed at any suitable period. The floating strips 308 may comprise any suitable material.
  • the floating strips 308 comprise a conductive material, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • the floating strips 308 may comprise one or more layers.
  • the floating strips 308 may be similar to the conductive strips described in U.S. Pat. No. 7,242,272, entitled “Methods and Apparatus Based on Coplanar Striplines,” issued to Ham et al. and/or U.S. Pat. No.
  • the one or more of the floating strips 308 may be electrically intercoupled and/or electrically isolated from one another; electrically coupled to one or more of the signal lines 302 , one or more of the ground lines 304 , and/or a reference voltage or signal; completely electrically isolated; and/or combinations thereof. Where one or more floating strips are electrically coupled, the electrical coupling may be through an interconnect or via.
  • FIGS. 8A-8F show perspective views of various embodiments of a coplanar waveguide structure 400 , wherein the coplanar waveguide structure 400 includes one or more floating strips above and/or beneath the signal lines/ground lines including periodic structures and the islands. Combining the one or more floating strips with the one or more signal lines having periodic structures and the islands increases the permittivity epsilon and results in an adjustable wavelength.
  • the coplanar waveguide structure 400 includes a first layer comprising one or more signal lines 402 , one or more ground lines 404 , and one or more islands 406 and a second layer comprising one or more floating strips 408 .
  • the signal lines 402 , ground lines 404 , islands 406 , and floating strips 408 are similar to the signal lines, ground lines, islands, and floating strips previously described with respect to the various embodiments above. Particularly, at least one of the one or more signal lines 402 includes a periodic structure. In some embodiments, at least one of the one or more ground lines 404 includes a periodic structure. The islands 406 and floating strips 408 may be at periodic intervals along the coplanar waveguide structure 400 , and the period of the floating strips 408 may be the same as or different than the period of the islands 406 . The first layer is separated from the second layer by a dielectric layer.
  • the second layer comprising the one or more floating strips 408 may be located below the first layer comprising the signal lines 402 /ground lines 404 /islands 406 as illustrated in FIGS. 8A , 8 B, 8 C or above the first layer comprising the signal lines 402 /ground lines 404 /islands 406 as illustrated in FIGS. 8D , 8 E, 8 F.
  • the coplanar waveguide structure 400 may include two second layers comprising one or more floating strips 408 , one located above the first layer and the other located below the first layer.
  • the coplanar waveguide structure 400 may include multiple second layers comprising one or more floating strips 408 above and/or below the first layer.
  • Regions between the various layers and features of the coplanar waveguide structure may be insulating regions, low-k dielectric regions, high-k dielectric regions, other suitable dielectric regions, other suitable regions, and/or combinations thereof.
  • the regions between the various layers and features may comprise varying materials and/or compositions.
  • FIGS. 9A-9D show perspective views of various embodiments of a coplanar waveguide structure 500 , wherein the coplanar waveguide structure 500 includes one or more signal lines, one or more ground lines, and one or more islands.
  • the coplanar waveguide structure 500 comprises one or more signal lines 502 , one or more ground lines 504 , and one or more islands 506 .
  • the ground signal lines 502 , ground lines 504 , and islands 506 are similar to the signal lines, ground lines, and islands previously described with respect to the various embodiments above.
  • FIGS. 9A-9D show perspective views of various embodiments of a coplanar waveguide structure 500 , wherein the coplanar waveguide structure 500 includes one or more signal lines, one or more ground lines, and one or more islands.
  • the coplanar waveguide structure 500 comprises one or more signal lines 502 , one or more ground lines 504 , and one or more islands 506 .
  • the ground signal lines 502 , ground lines 504 , and islands 506 are similar to
  • the signal lines 502 and ground lines 504 do not include a periodic structure, illustrating that introducing the islands 506 alone into the coplanar waveguide structure 500 increases the permittivity epsilon and results in an adjustable wavelength.
  • the islands 506 may be disposed at periodic intervals.
  • signal lines 502 are disposed between ground lines 504
  • one or more islands 506 are disposed between each of the signal lines 502 and each of the ground lines 504 .
  • FIG. 9B is similar to FIG. 9A and additionally includes one or more islands 506 disposed between the signal lines 502 .
  • FIG. 9C is similar to FIG. 9A and additionally includes one or more ground lines 504 disposed between the signal lines 502 .
  • FIG. 9D is similar to FIG. 9A and includes one or more islands 506 disposed on either side of each signal line 502 and each ground line 504 . It is understood that the coplanar waveguide structure 500 is not limited by FIGS. 9A-9D and may comprise any combination and configuration of signal lines 502 , ground lines 504 , and islands 506 .
  • FIGS. 10A-10F show perspective views of various embodiments of a coplanar waveguide structure 600 , wherein the coplanar waveguide structure 600 includes one or more floating strips above and/or beneath the signal lines/ground lines and the islands. Combining the one or more floating strips with the one or more signal lines, even absent having periodic structures, and the islands increases the permittivity epsilon and results in an adjustable wavelength.
  • the coplanar waveguide structure 600 includes a first layer comprising one or more signal lines 602 , one or more ground lines 604 , and one or more islands 606 and a second layer comprising one or more floating strips 608 .
  • the signal lines 602 , ground lines 604 , islands 606 , and floating strips 608 are similar to the signal lines, ground lines, islands, and floating strips previously described with respect to the various embodiments above. Particularly, the islands 606 and floating strips 608 may be at periodic intervals along the length of the coplanar waveguide 600 , and the period of the floating strips 608 may be the same as or different than the period of the islands 606 .
  • the first layer is separated from the second layer by a dielectric layer.
  • the second layer comprising the one or more floating strips 608 may be located below the first layer comprising the signal lines 602 /ground lines 604 /islands 606 as illustrated in FIGS.
  • the coplanar waveguide structure 600 may include two second layers comprising one or more floating strips 608 , one located above the first layer and the other located below the first layer. In some embodiments, the coplanar waveguide structure 600 may include multiple second layers comprising one or more floating strips 608 above and/or below the first layer.
  • a reduced wavelength characteristic is achieved in transmission lines by adding periodical shielding structures (e.g., metal strip shields) in the coplanar waveguide structures.
  • the periodical shielding structures may result in decelerating the propagation speed. Such decelerated propagation speed in a guided medium is called a slow-wave.
  • Increasing the slow wave feature and reducing the electric filed coupled to a substrate of a device may also be achieved.
  • the below embodiments, comprising coplanar waveguide structures combined with a variety of different shielding structures may be referred to as slow-wave coplanar waveguide (CPW) transmission lines.
  • the slow-wave CPW transmission lines may increase the relative permittivity and simultaneously reduce attenuation loss.
  • the ground signals may be eventually replaced with floating shielding structures, such as those described below, particularly in high frequency devices.
  • An AC source causes the polarity of the ground potential to alternate between positive and negative over the complete RF cycle, resulting in energy being coupled to a conductive substrate.
  • shielding structures in the present embodiments may be adequate conductors, and may also be isolated, there is no net charge on the shielding structures. Thus, no electromagnetic flux exists below the shielding structures, and the shielding structures are immune to both positive and negative potential swings, which allows energy coupled to a substrate to be minimized. Consequently, the shielding structures may essentially replace a ground connection in some embodiments.
  • a transverse cross-sectional view of a device 700 including a lower substrate 702 , an upper substrate 704 , a coplanar waveguide structure 706 including one or more conductor lines 707 a, 707 b, and a shielding structure 708 including one or more slot-type floating strips 709 is provided.
  • the lower substrate 702 may comprise any suitable material and any suitable thickness.
  • the lower substrate 702 comprises a semiconductor substrate, such as a silicon substrate.
  • the lower substrate 702 may comprise an elementary semiconductor including silicon or germanium in crystal, polycrystalline, or an amorphous structure; a compound semiconductor including silicon carbide, gallium arsenic, gallium phosphide, indium phosphide, indium arsenide, and indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and GaInAsP; any other suitable material; and/or combinations thereof.
  • the alloy semiconductor substrate may have a gradient SiGe feature in which the Si and Ge composition change from one ratio at one location to another ratio at another location of the gradient SiGe feature.
  • the alloy SiGe is formed over a silicon substrate.
  • a SiGe substrate is strained.
  • the substrate may be a semiconductor on insulator (SOI) or a thin film transistor (TFT).
  • the semiconductor substrate may include a doped epi layer or a buried layer.
  • the compound semiconductor substrate may have a multilayer structure, or the silicon substrate may include a multilayer compound semiconductor structure.
  • the lower substrate 702 may comprise glass.
  • the lower substrate 702 may further include multiple layers comprising the same or varying materials.
  • the lower substrate 702 may include various doping configurations depending on design requirements as known in the art (e.g., p-type substrate regions or n-type substrate regions). In some embodiments, the lower substrate 702 may include doped regions. It is understood that the lower substrate 702 may comprise partially or fully fabricated devices, structures, and or features known in the art, including but not limited to gate structures, source/drain regions, lightly doped regions, shallow trench isolations, transistors, diodes, vias, trenches, various contacts/vias and multilayer interconnect features (e.g., metal layers and interlayer dielectrics), other features, and/or combinations thereof.
  • the upper substrate 704 is formed over the lower substrate 702 .
  • the upper substrate 704 may comprise any suitable material and any suitable thickness.
  • the upper substrate 104 comprises a dielectric material, such as TEOS oxide, silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, zirconium oxide, titanium oxide, aluminum oxide, hafnium dioxide-alumina (HfO 2 —Al 2 O 3 ) alloy, PSG, BPSG, other suitable dielectric materials, and/or combinations thereof.
  • the upper substrate 704 may comprise a high-k dielectric material, which may include metal oxides, metal nitrides, metal silicates, transition metal-oxides, transition metal-nitrides, transition metal-silicates, oxynitrides of metals, metal aluminates, zirconium silicate, zirconium aluminate, HfO 2 , HfSiO, HfSiON, HfTaO, HfTaTiO, HfTiO, HfZrO, HfAlON, other suitable high-k dielectric materials, and/or combinations thereof.
  • a high-k dielectric material may include metal oxides, metal nitrides, metal silicates, transition metal-oxides, transition metal-nitrides, transition metal-silicates, oxynitrides of metals, metal aluminates, zirconium silicate, zirconium aluminate, HfO 2 , HfSiO, Hf
  • the upper substrate 704 may comprise a low-k dielectric material, such as fluorinated silica glass (FSG), carbon doped silicon oxide, Black Diamond® (Applied Materials of Santa Clara, Calif.), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), SiLK (Dow Chemical, Midland, Mich.), polyimide, other proper porous polymeric materials, and/or combinations thereof.
  • FSG fluorinated silica glass
  • Black Diamond® Applied Materials of Santa Clara, Calif.
  • Xerogel Aerogel
  • Aerogel amorphous fluorinated carbon
  • Parylene Parylene
  • BCB bis-benzocyclobutenes
  • SiLK Low Chemical, Midland, Mich.
  • polyimide other proper porous polymeric materials, and/or combinations thereof.
  • the upper substrate 104 may include a multilayer structure, wherein each layer comprises the same or varying materials, such as varying dielectric and metal materials
  • the coplanar waveguide structure 706 and the shielding structure 708 may be formed above, below, and/or within upper substrate 704 .
  • the coplanar waveguide structure 706 comprises the one or more conductor lines 707 a, 707 b.
  • the one or more conductor lines 707 a, 707 b are similar to the conductor lines, signal lines, and ground lines described herein.
  • the one or more conductor lines 707 a comprise signal lines and the one or more conductor lines 707 b comprise ground lines.
  • at least one of the one or more conductor lines 707 a and/or ground lines 707 b may include a periodic structure.
  • the signal lines 707 a /ground lines 707 b may comprise any suitable material and any suitable thickness.
  • the signal lines 707 a /ground lines 707 b may comprise a metal, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • the signal lines 707 a /ground lines 707 b may comprise the same material or varying materials.
  • Regions between the one or more conductor lines 707 a, 707 b may be portions of the upper substrate 704 , insulating regions, low-k dielectric regions, high-k dielectric regions, other suitable dielectric regions, other suitable regions, and/or combinations thereof.
  • the shielding structure 708 including the one or more slot-type floating strips 709 is formed above the coplanar waveguide structure 706 .
  • the shielding structure 708 may include the one or more slot-type floating strips 709 formed below the coplanar waveguide structure 706 .
  • the slot-type floating strips 709 may extend transversely to the coplanar waveguide structure 706 and may further extend across substantially the entire width of the coplanar waveguide structure 706 or a portion of the width of the coplanar waveguide structure 706 .
  • the slot-type floating strips 709 are similar to the floating strips described above, comprising a strip length S L , which may be any suitable length.
  • the slot-type floating strips are spaced apart at any suitable distance S S .
  • each of the slot-type floating strips may be spaced apart equal distances and/or varying distances.
  • the slot-type floating strips 709 may be at periodic intervals along the length of the coplanar waveguide structure 706 . If at such periodic intervals, the slot-type floating strips 709 may disposed at any suitable period.
  • the slot-type floating strips 709 comprise any suitable material.
  • the slot-type floating strips 709 may comprise a conductive material, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • each of the one or more slot-type floating strips 709 may comprise the same material or varying materials.
  • the one or more slot-type floating strips 709 may be electrically intercoupled and/or electrically isolated from one another; electrically coupled to one or more of the conductor lines 707 a, 707 b, and/or a reference voltage or signal; completely electrically isolated; and/or combinations thereof. Where one or more slot-type floating strips 709 are electrically coupled, the electrical coupling may be through an interconnect or via. Regions between the slot-type floating strips 709 and regions between the coplanar waveguide structure 706 and the shielding structure 708 may be portions of the upper substrate 704 , insulating regions, low-k dielectric regions, high-k dielectric regions, other suitable dielectric regions, other suitable regions, and/or combinations thereof.
  • the lower substrate 802 , upper substrate 804 , coplanar waveguide structure 806 including one or more conductor lines 807 a, 807 b are similar to the lower substrate, upper substrate, and coplanar waveguide structure including one or more conductor lines described above with reference to FIG. 11 .
  • the shielding structure 808 includes the first portion 808 a comprising one or more slot-type floating strips 809 a formed above the coplanar waveguide structure 806 and the second portion 808 b comprising one or more slot-type floating strips 809 b formed above the coplanar waveguide structure 806 .
  • the slot-type floating strips 809 a, 809 b are similar to the slot-type floating strips 709 described in FIG. 11 .
  • the slot-type floating strips 809 a, 809 b extend transversely to the coplanar waveguide structure 806 and may further extend across substantially the entire width of the coplanar waveguide structure 806 or a portion of the width of the coplanar waveguide structure 806 .
  • the slot-type floating strips 809 a, 809 b are spaced apart at any suitable distance. In some embodiments, each of the slot-type floating strips may be spaced apart equal distances and/or varying distances.
  • the slot-type floating strips 809 a, 809 b may be at periodic intervals along the length of the coplanar waveguide structure 806 . If at such periodic intervals, the slot-type floating strips 809 a, 809 b may disposed at any suitable period.
  • first portion 808 a comprising one or more slot-type floating strips 809 a and the second portion 808 b comprising one or more slot-type floating strips 809 b may be the same or different in form, substance, and/or dimension.
  • first portion 808 a may include the slot-type floating strips 809 a comprising a first material and/or placed at a first periodical interval; and the second portion 808 b may include the slot-type floating strips 809 b comprising a second material and/or placed at a second periodical interval.
  • FIGS. 13 and 14 provide transverse cross-sectional views of devices 900 and 1000 comprising shielding structures including one or more slot-type floating strips having extensions.
  • Device 900 comprises a lower substrate 902 , an upper substrate 904 , a coplanar waveguide structure 906 including one or more conductor lines 907 a, 907 b, and a shielding structure 908 including one or more slot-type floating strips 909 having one or more extensions.
  • Device 1000 comprises a lower substrate 1002 , an upper substrate 1004 , a coplanar waveguide structure 1006 including one or more conductor lines 1007 a, 1007 b, and a shielding structure 1008 including one or more slot-type floating strips 1009 having one or more extensions.
  • the lower substrates 902 , 1002 ; upper substrates 904 , 1004 ; and coplanar waveguide structures 906 , 1006 including one or more conductor lines 907 a, 907 b, 1007 a, 1007 b are similar to the lower substrates, upper substrates, and coplanar waveguide structures including one or more conductor lines described above.
  • the shielding structures 908 , 1008 including one or more slot-type floating strips 909 , 1009 are also similar to the shielding structures described above, except the shielding structures 908 , 1008 include one or more slot-type floating strips 909 , 1009 having extensions. It is understood that the extensions may be an integral part of the slot-type floating strips 909 , 1009 , or in some embodiments, the extensions may be separate features of the shielding structures 908 , 1008 , coupled (and/or connected) to the slot-type floating strips 909 , 1009 . Referring to FIG.
  • the shielding structure 909 is formed below the coplanar waveguide structure 906 , and the slot-type floating strips 909 also include a portion that extends from below the coplanar waveguide structure 906 to above (or even with) the coplanar waveguide structure 906 (i.e., extends upwardly away from the lower substrate 902 and upper substrate 904 ).
  • the shielding structure 1008 is formed above the coplanar waveguide structure 1006
  • the slot-type floating strips 1009 include a portion that extends from above the coplanar waveguide structure 1006 to below (or even with) the coplanar waveguide structure 1006 (i.e., extends downwardly toward the lower substrate 1002 and upper substrate 1004 ).
  • the portions of the slot-type floating strips 909 , 1009 may extend partially or entirely along the height of the coplanar waveguide structures 906 , 1006 .
  • the portion of the slot-type floating strips 909 , 1009 that extends vertically forms a rectangular-shaped extension. It is contemplated that the slot-type floating strips 909 , 1009 may include other shaped extensions, such as circular-shaped, elliptical-shaped, triangular-shaped, other suitable shapes, and/or combinations thereof.
  • FIG. 15 provides a transverse cross-sectional view of device 1100 comprising a lower substrate 1102 , an upper substrate 1104 , a coplanar waveguide structure 1106 including one or more conductor lines 1107 a, 1107 b, and a shielding structure 1108 including one or more slot-type floating shields 1109 .
  • the lower substrate 1102 , upper substrate 1104 , and coplanar waveguide structure 1106 including one or more conductor lines 1107 a, 1107 b are similar to the lower substrates, upper substrates, and coplanar waveguide structures including one or more conductor lines described above.
  • the slot-type floating shields 1109 are rectangular-shaped, surrounding the coplanar waveguide structure 1106 .
  • the slot-type floating shields 1109 may comprise any suitable shape, for example, surrounding the coplanar waveguide with circular-shaped slot-type floating shields.
  • the slot-type floating shields 1109 may be spaced at periodic intervals at any suitable period along the length of the coplanar waveguide structure 1106 .
  • the slot-type floating shields 1109 may be similar in various respects to the slot-type floating strips and slot-type floating strips having extension described above.
  • the one or more slot-type floating shields 1109 may be electrically intercoupled and/or electrically isolated from one another; electrically coupled to one or more of the conductor lines 1107 a, 1107 b, and/or a reference voltage or signal; completely electrically isolated; and/or combinations thereof. Where one or more slot-type floating shields 1109 are electrically coupled, the electrical coupling may be through an interconnect or via.
  • FIGS. 16 , 17 , and 18 provide transverse cross-sectional views of devices 1200 , 1300 , and 1400 comprising shielding structures according to various embodiments.
  • Device 1200 comprises a lower substrate 1202 , an upper substrate 1204 , a coplanar waveguide structure 1206 including one or more conductor lines 1207 a, 1207 b, and a shielding structure 1208 including one or more slot-type floating strips 1209 and one or more slot-type grounded strips 1210 .
  • Device 1300 comprises a lower substrate 1302 , an upper substrate 1304 , a coplanar waveguide structure 1306 including one or more conductor lines 1307 a, 1307 b, and a shielding structure 1308 including one or more slot-type floating strips 1309 and one or more slot-type grounded strips 1310 .
  • Device 1400 comprises a lower substrate 1402 , an upper substrate 1404 , a coplanar waveguide structure 1406 including one or more conductor lines 1407 a, 1407 b, and a shielding structure comprising a first portion 1408 a and a second portion 1408 b (collectively referred to as shielding structure 1408 ), wherein the first and second portions 1408 a, 1408 b include one or more slot-type floating strips 1409 and one or more slot-type grounded strips 1410 .
  • the lower substrates 1202 , 1302 , 1402 ; upper substrates 1204 , 1304 , 1404 ; and coplanar waveguide structures 1206 , 1306 , 1406 including one or more conductor lines 1207 a, 1207 b, 1307 a, 1307 b, 1407 a, 1407 b are similar to the lower substrates, upper substrates, and coplanar waveguide structures including one or more conductor lines described above.
  • the shielding structures 1208 , 1308 , 1408 are similar to the shielding structures described above, particularly, the slot-type floating strips 1209 , 1309 , 1409 are similar to the slot-type floating strips described above.
  • the shielding structures 1208 , 1308 , 1408 include one or more slot-type grounded strips 1210 , 1310 , 1410 coupled to (and/or connected to) the slot-type floating strips 1209 , 1309 , 1409 .
  • the shielding structure 1209 is formed above the coplanar waveguide structure 1206 , and the slot-type floating strips 1209 are coupled to one or more slot-type grounded strips 1210 . Referring to FIG.
  • the shielding structure 1308 is formed below the coplanar waveguide structure 1306 , and the slot-type floating strips 1309 are coupled to one or more slot-type grounded strips 1310 .
  • the shielding structure 1408 comprises a first portion 1408 a formed above the coplanar waveguide structure 1406 and a second portion 1408 b formed below the coplanar waveguide structure 1406 , and the slot-type floating strips 1409 are coupled to one or more slot-type grounded strips 1410 .
  • the one or more slot-type grounded strips 1210 , 1310 , 1410 may extend partially or entirely along the length of the coplanar waveguide structures 1206 , 1306 , 1406 .
  • the slot-type grounded strips 1210 , 1310 , 1410 are substantially uniform in length, height, and width, and further lie substantially parallel with respect to one another. It is understood that, in alternate embodiments, the slot-type grounded strips 1210 , 1310 , 1410 may comprise varying lengths, heights, and/or widths.
  • the shielding structures comprise two substantially identical parallel slot-type grounded strips 1210 , 1310 , 1410 coupled to the slot-type floating strips 1209 .
  • the slot-type grounded strips 1210 , 1310 , 1410 may be similar to the slot-type floating strips 1209 .
  • the slot-type grounded strips 1210 , 1310 , 1410 comprise any suitable material, for example, a conductive material, such as aluminum, copper, tungsten, titanium, tantulum, titanium nitride, tantalum nitride, nickel silicide, cobalt silicide, silver, TaC, TaSiN, TaCN, TiAl, TiAlN, metal alloys, other suitable materials, and/or combinations thereof.
  • each of the one or more slot-type grounded strips 1210 , 1310 , 1410 may comprise the same material or varying materials.
  • Regions between the slot-type grounded strips 1210 , 1310 , 1410 and/or the slot-type floating strips 1208 , 1308 , 1408 and regions between the coplanar waveguide structures 1206 , 1306 , 1406 and the shielding structures 1208 , 1308 , 1408 may be portions of the upper substrates 1204 , 1304 , 1404 , insulating regions, low-k dielectric regions, high-k dielectric regions, other suitable dielectric regions, other suitable regions, and/or combinations thereof.
  • the slot-type grounded strips 1210 , 1310 , 1410 are at any suitable position. Adjusting the position of the slot-type grounded strips 1210 , 1310 , 1410 allows the characteristic impedance of the devices 1200 , 1300 , 1400 to be varied and tuned as desired. Where high performance requirements are desired, such as in high quality stub inductors, impedance matching networks of a quarter-wavelength-long transmission line, resonators, oscillators, signal splitters, combiners, amplifiers, and filters, the tunable characteristic impedance provided is highly desirable. In some embodiments, each of the slot-type grounded strips 1210 , 1310 , 1410 may be spaced apart equal distances and/or varying distances.
  • the slot-type grounded strips 1210 , 1310 , 1410 may be at periodic intervals along the width of the coplanar waveguide structures 1206 , 1306 , 1406 at any suitable period. Further, the one or more slot-type grounded strips 1210 , 1310 , 1410 may be electrically intercoupled and/or electrically isolated from one another; electrically coupled to one or more of the conductor lines 1207 a, 1207 b, 1307 a, 1307 b, 1407 a, 1407 b, and/or a reference voltage or signal; completely electrically isolated; and/or combinations thereof. Where one or more slot-type grounded strips 1210 , 1310 , 1410 are electrically coupled, the electrical coupling may be through an interconnect or via.
  • FIGS. 19 , 20 , and 21 provide transverse cross-sectional views of devices 1500 , 1600 , and 1700 comprising shielding structures according to various embodiments.
  • Device 1500 comprises a lower substrate 1502 , an upper substrate 1504 , a coplanar waveguide structure 1506 including one or more conductor lines 1507 a, 1507 b, and a shielding structure 1508 including one or more slot-type floating strips 1509 , one or more slot-type grounded strips 1510 , and one or more extensions 1512 .
  • Device 1600 comprises a lower substrate 1602 , an upper substrate 1604 , a coplanar waveguide structure 1606 including one or more conductor lines 1607 a, 1607 b, and a shielding structure 1608 including one or more slot-type floating strips 1609 , one or more slot-type grounded strips 1610 , and one or more extensions 1612 .
  • Device 1700 comprises a lower substrate 1702 , an upper substrate 1704 , a coplanar waveguide structure 1706 including one or more conductor lines 1707 a, 1707 b, a shielding structure comprising a first portion 1708 a and a second portion 1708 b (collectively referred to as shielding structure 1708 ), wherein the first and second portions 1708 a, 1708 b include one or more slot-type floating strips 1709 , one or more slot-type grounded strips 1710 , and extensions 1712 .
  • the lower substrates 1502 , 1602 , 1702 ; upper substrates 1504 , 1604 , 1704 ; and coplanar waveguide structures 1506 , 1606 , 1706 including one or more conductor lines 1507 a, 1507 b, 1607 a, 1607 b, 1707 a, 1707 b are similar to the lower substrates, upper substrates, and coplanar waveguide structures including one or more conductor lines described above.
  • the shielding structures 1508 , 1608 , 1708 including the slot-type floating strips 1509 , 1609 , 1709 and slot-type grounding strips 1510 , 1610 , 1710 are also similar to the shielding structures including slot-type floating strips and/or slot-type grounding strips described above, except the shielding structures 1508 , 1608 , 1708 include one or more extensions 1512 , 1612 , 1712 .
  • the shielding structures 1508 , 1608 , 1708 include one or more extensions 1512 , 1612 , 1712 .
  • the slot-type floating strips 1509 and slot-type grounding strips 1510 of the shielding structure 1508 are formed above the coplanar waveguide structure 1506 , and the extensions 1512 extend from above the coplanar waveguide structure 1506 to below (or even with) the coplanar waveguide structure 1506 (i.e., extends downwardly toward the lower substrate 1502 and upper substrate 1504 ).
  • the slot-type floating strips 1609 and slot-type grounding strips 1610 of the shielding structure 1608 are formed below the coplanar waveguide structure 1606 , and the extensions 1612 extend from below the coplanar waveguide structure 1606 to above (or even with) the coplanar waveguide structure 1606 (i.e., extends upwardly away from the lower substrate 1602 and upper substrate 1604 ).
  • the slot-type floating strips 1709 and slot-type grounding strips 1710 of the shielding structure 1708 are formed above and below the coplanar waveguide structure 1706 , and the extensions 1712 extend from the slot-type floating/grounding strips 1709 / 1710 above the coplanar waveguide structure 1706 to below the slot-type floating/grounding strips 1709 / 1710 below the coplanar waveguide structure 1706 .
  • the extensions 1512 , 1612 , 1712 may be coupled to (and/or connected with) the slot-type floating strips 1509 , 1609 , 1709 and/or slot-type grounding strips 1510 , 1610 , 1710 .
  • the extensions 1512 , 1612 , 1712 may extend partially or entirely along the height of the coplanar waveguide structures 1506 , 1606 , 1706 and/or partially or entirely between the slot-type floating/grounding strips 1709 / 1710 above the coplanar waveguide structure 1706 and the slot-type floating/grounding strips 1709 / 1710 below the coplanar waveguide structure 1706 .
  • the extensions 1512 , 1612 , 1712 are rectangular-shaped. It is contemplated that the extensions 1512 , 1612 , 1712 may include other shaped extensions, such as circular-shaped, elliptical-shaped, triangular-shaped, other suitable shapes, and/or combinations thereof.
  • the slot-type floating strips 1509 , 1609 , 1709 are oriented transversely to the coplanar waveguide structures 1506 , 1606 , 1706 . It is understood that the slot-type floating strips 1509 , 1609 , 1709 may be oriented differently in other embodiments.
  • FIGS. 22 , 23 , and 24 provide transverse cross-sectional views of devices 1800 , 1900 , and 2000 comprising shielding structures according to various embodiments.
  • Device 1800 comprises a lower substrate 1802 , an upper substrate 1804 , a coplanar waveguide structure 1806 including one or more conductor lines 1807 a, 1807 b, and a shielding structure 1808 including one or more slot-type floating strips 1809 and one or more slot-type grounded strip extensions 1810 .
  • Device 1900 comprises a lower substrate 1902 , an upper substrate 1904 , a coplanar waveguide structure 1906 including one or more conductor lines 1907 a, 1907 b, and a shielding structure 1908 including one or more slot-type floating strips 1909 and one or more slot-type grounded strip extensions 1910 .
  • Device 2000 comprises a lower substrate 2002 , an upper substrate 2004 , a coplanar waveguide structure 2006 including one or more conductor lines 2007 a, 2007 b, a shielding structure comprising one or more slot-type floating strips 2009 and one or more slot-type grounded strip extensions.
  • the lower substrates 1802 , 1902 , 2002 ; upper substrates 1804 , 1904 , 2004 ; and coplanar waveguide structures 1806 , 1906 , 2006 including one or more conductor lines 1807 a, 1807 b, 1907 a, 1907 b, 2007 a, 2007 b are similar to the lower substrates, upper substrates, and coplanar waveguide structures including one or more conductor lines described above.
  • the shielding structures 1808 , 1908 , 2008 including the slot-type floating strips 1809 , 1909 , 2009 are also similar to the shielding structures including slot-type floating strips described above, except the shielding structures 1808 , 1908 , 2008 are coupled to (and/or connected to) one or more slot-type grounding strip extensions 1810 , 1910 , 2010 .
  • the slot-type floating strips 1809 of the shielding structure 1808 are formed above the coplanar waveguide structure 1806 , and the slot-type grounding strip extensions 1810 extend from above the coplanar waveguide structure 1806 to below (or even with) the coplanar waveguide structure 1806 (i.e., extends downwardly toward the lower substrate 1802 and upper substrate 1804 ).
  • the slot-type floating strips 1909 of the shielding structure 1908 are formed below the coplanar waveguide structure 1906 , and the slot-type grounding strip extensions 1910 extend from below the coplanar waveguide structure 1906 to above (or even with) the coplanar waveguide structure 1906 (i.e., extends upwardly away from the lower substrate 1902 and upper substrate 1904 ).
  • the slot-type floating strips 2009 of the shielding structure 2008 are formed above and below the coplanar waveguide structure 2006 , and the slot-type grounding strip extensions 2010 extend from the slot-type floating strips 2009 above the coplanar waveguide structure 2006 to below the slot-type floating strips 2009 below the coplanar waveguide structure 2006 .
  • the slot-type grounding strip extensions 1810 , 1910 , 2010 may be coupled to (and/or connected with) the slot-type floating strips 1809 , 1909 , 2009 .
  • the slot-type grounding strip extensions 1810 , 1910 , 2010 may extend partially or entirely along the height of the coplanar waveguide structures 1806 , 1906 , 2006 and/or partially or entirely between the slot-type floating strips 2009 above the coplanar waveguide structure 2006 and the slot-type floating strips 2009 below the coplanar waveguide structure 2006 .
  • the slot-type grounding strip extensions 1810 , 1910 , 2010 are rectangular-shaped.
  • the slot-type grounding strip extensions 1810 , 1910 , 2010 may include other shaped extensions, such as circular-shaped, elliptical-shaped, triangular-shaped, other suitable shapes, and/or combinations thereof.
  • the slot-type floating strips 1809 , 1909 , 2009 are oriented transversely to the coplanar waveguide structures 1806 , 1906 , 2006 . It is understood that the slot-type floating strips 1809 , 1909 , 2009 may be oriented differently in other embodiments.
  • the devices and structures disclosed herein may be formed using well-known manufacturing processes. Further, the devices and structures disclosed herein may be used in many products, including but not limited to items such as integrated circuits, monolithic microwave integrated circuits, radio frequency transmitters and receivers, radio frequency communication equipment, antennas, circuit boards, amplifiers, modulators, and demodulators. These and other items may be improved by using one or more of the devices and structures disclosed herein. For example, the devices and structures disclosed herein may allow some items to be made smaller, lighter, more efficient, more powerful, more sensitive, less noisy, more selective, faster, or cheaper.
  • a device for transmitting a radio frequency signal along a signal line includes a signal line that extends along a principal axis. To one side of the signal line is a first dielectric, and to an opposite side of the signal line is a second dielectric. Proximate to the first dielectric is a first ground line, and proximate to the second dielectric is a second ground line. The first and second ground lines are approximately parallel to the signal line.
  • the device has a transverse cross-section that varies along the principal axis.

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US12/400,133 2009-03-09 2009-03-09 High performance coupled coplanar waveguides with slow-wave features Abandoned US20100225425A1 (en)

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US12/400,133 US20100225425A1 (en) 2009-03-09 2009-03-09 High performance coupled coplanar waveguides with slow-wave features
CN2009101411221A CN101834330B (zh) 2009-03-09 2009-05-22 共平面波导装置
TW098140064A TWI395369B (zh) 2009-03-09 2009-11-25 共平面波導裝置
KR1020100008025A KR101158189B1 (ko) 2009-03-09 2010-01-28 느린-파동 피처들과 결합된 고성능 동평면 도파관들
JP2010051833A JP5042327B2 (ja) 2009-03-09 2010-03-09 スローウェーブ高性能結合コプレナ導波路
US13/542,312 US8629741B2 (en) 2009-03-09 2012-07-05 Slot-type shielding structure having extensions that extend beyond the top or bottom of a coplanar waveguide structure

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JP2010213281A (ja) 2010-09-24
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TWI395369B (zh) 2013-05-01
KR101158189B1 (ko) 2012-06-20

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