US20090274872A1 - Device and Method for Coating a Micro-and/or Nano-Structured Structural Substrate and Coated Structural Substrate - Google Patents

Device and Method for Coating a Micro-and/or Nano-Structured Structural Substrate and Coated Structural Substrate Download PDF

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Publication number
US20090274872A1
US20090274872A1 US12/225,204 US22520407A US2009274872A1 US 20090274872 A1 US20090274872 A1 US 20090274872A1 US 22520407 A US22520407 A US 22520407A US 2009274872 A1 US2009274872 A1 US 2009274872A1
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Prior art keywords
coating substance
coating
structured substrate
vacuum chamber
chamber
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US12/225,204
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English (en)
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Erich Thallner
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Priority claimed from PCT/EP2007/002206 external-priority patent/WO2007112833A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Definitions

  • the present invention relates to a device and a method for coating a microstructured and/or nanostructured structured substrate and a structures substrate coated with such a device and/or such a method.
  • MEMS micro electromechanical systems
  • MOEMS microoptoelectromechanical systems
  • NEMS nanoelectromechanical systems
  • MEMS and NEMS may contain optical, chemical, and/or biological components.
  • Photoresist is usually used for this purpose, in order to transfer lithographic structures in a further method step.
  • microstructured and/or nanostructured structured substrates of this type has been shown to be difficult.
  • the microstructured and/or nanostructured structured substrates of the MEMS/MOEMS and NEMS are comparatively thickly structured substrates.
  • These deep structures are generated through wet or dry etching, embossing, or molding, and may have greatly varying shapes and greatly varying depths and flank formations.
  • the structures of the structured substrate frequently have steep flanks and often even perpendicular side walls.
  • depressions implemented pits and/or holes having a depth of approximately 300 ⁇ m and a width or a diameter of the upper opening of approximately 100 ⁇ m and an angle of inclination of the side walls of up to 70° are lacquered uniformly.
  • the methods known from the semiconductor industry for surface coating, such as spin lacquering, application of photoresist films, or immersion lacquering, are not suitable, since the coating substance may not penetrate up to the floor of the depressions.
  • the present invention is based on the object of suggesting a device and a method for coating a microstructured and/or nanostructured structured substrate, using which a uniform coating of the structured surface of the structured substrate with a coating substance is possible.
  • the present invention is based on the idea of situating the structured substrate on a carrier unit in a vacuum chamber.
  • the coating substance is introduced into the vacuum chamber before and/or while and/or after the chamber is evacuated.
  • the air is suctioned off of the surface structure, i.e., out of the depressions of the structured substrate.
  • the pressure level in the vacuum chamber is increased, preferably suddenly, even during and/or after the introduction of the coating substance into the vacuum chamber. In this way, the coating substance is conveyed/drawn into the depressions of the structured substrate, through which even very deep and narrow depressions are coated uniformly.
  • Photoresist is preferably used as the coating substance.
  • the structured substrate with other coating substances, such as surface activation agents, solvents, adhesion promoters, or other chemicals. Treating or coating the structured substrate multiple times in sequence, preferably using different coating substances, is within the scope of the present invention.
  • structured substrate for example a substrate with a topography, the structured substrate consisting of a semiconductor material such as for example silicon or a composite semiconductor material.
  • the substrate may also be made of ceramic, glass, plastic, or carbon.
  • the present invention is particularly advantageous for depressions in the structured substrate, such as voids (vias), in which the diameter of the opening is significantly smaller in size than the depth of the depression. Typical dimensions of such depressions range from an opening diameter of 300 ⁇ m and a depth of 700 ⁇ m to a diameter of 5 ⁇ m and a depth of 100 ⁇ m.
  • the side wall profiles of the depressions may extend vertically downward, but may also each be inclined inwardly or outwardly by up to 45°.
  • a typical ratio of diameter to depth of the depressions is therefore 1 to 2 to 1 to 20, more preferably 1 to 4 to 1 to 20, most preferably 1 to 8 to 1 to 20.
  • the coating substance is introduced into the vacuum chamber in the liquid state through an inlet line.
  • misting the coating substance is more advantageous for achieving a uniform coating.
  • spray nozzles, atomizer nozzles, and/or ultrasonic atomizers may be used. The finer the coating substance mist, the more uniform the resulting coating.
  • Optimum results are achieved if the structured substrate is cooled down again before and/or while the coating substance is introduced, particularly using cooling elements of the carrier unit. In this way, the condensation of coating substance mist in the depressions of the structured substrate is supported. Different temperature profiles and curves may be implemented with the aid of the heating and/or cooling elements, through which the coating result may be influenced for different structured substrates or coating substances.
  • the misting nozzle or the feed line may also be moved relative to the structured substrate. It is particularly advantageous to apply the coating substance to the structured substrate in a spiral fashion.
  • the pressure elevation after the evacuation of the vacuum chamber is performed simultaneously with the introduction of coating substance and/or due to the introduction of coating substance.
  • a misting chamber in addition to the vacuum chamber, a misting chamber is provided, which is connected via at least one connection line to the vacuum chamber.
  • Misting means are provided within the misting chamber, particularly at least one nozzle and/or other suitable atomizer devices, for misting the coating substance. With the aid of the misting means, the coating substance is misted in the misting chamber.
  • the pressure level in the misting chamber is higher in this case than the pressure level of the evacuated vacuum chamber.
  • the at least one connection line between misting chamber and vacuum chamber is opened, through which the coating substance mist flows suddenly at excess pressure from the misting chamber into the vacuum chamber, through which in turn the coating substance mist is conveyed/drawn into the depressions of the structured substrate and adheres uniformly to the side walls and the floor.
  • Optimum results are achieved if the coating substance or the coating substance mist is heated within the misting chamber before being introduced into the vacuum chamber.
  • the at least one connection line is only opened after a desired coating substance concentration exists in the misting chamber. It is conceivable to monitor the coating substance concentration in the misting chamber, preferably through optical or chemical sensors. According to a simple embodiment, however, the misting chamber may be charged with coating substance over a predetermined time span before the connection to the vacuum chamber is produced.
  • the misting chamber is implemented having a changeable volume.
  • the misting chamber preferably has a floor plate which is connected via a folded bellows to the remaining misting chamber. In this way, it is possible to influence the concentration of the coating substance mist within the misting chamber and influence the pressure level within the misting chamber via the change of the volume of the misting chamber.
  • the misting chamber advantageously also has a drain to be able to drain off excess coating substance.
  • the introduction of the coating substance can take place without a change in pressure with respect to the surroundings, in particular at atmospheric pressure, the introduction occurring in liquid form, in particular as a liquid jet, and the coating substance having a solvent content of at least 25% by volume, in particular at least 40% by volume, preferably at least 60% by volume, most preferably at least 70% by volume.
  • the liquid jet should preferably be applied continuously to the structured substrate in order to be able to continuously enter into the respective depressions. Hereby is achieved that no void spaces are formed in the depressions.
  • the coating substance should preferably completely fill the depressions. Because of the high solvent content, which is later evaporated by heat exposure, an optimal, homogenous coating of the surface of the depressions and the surface of the structures substrate is achieved.
  • FIG. 1 shows a first exemplary embodiment of a device for coating a microstructured and/or nanostructured structured substrate, in which the coating substance is misted directly in a vacuum chamber;
  • FIG. 2 shows a second exemplary embodiment of a device according to the present invention having a misting chamber which is connected via closable connection lines to the vacuum chamber;
  • FIG. 3 is an illustration of the device according to the invention in process step 1 (applying a partial vacuum);
  • FIG. 4 is an illustration of the device according to the invention in process step 2 (applying the coating substance);
  • FIG. 5 is an illustration of the device according to the invention in process step 3 (increasing the pressure level);
  • FIG. 6 is an illustration of a further process step, in particular the heating of the structured substrate.
  • FIG. 7 is an illustration of the process step of heating in a more progressed stage in comparison with the stage illustrated in FIG. 6 with parts of the depressions in the structured substrate enlarged.
  • FIG. 1 shows a device 1 for coating a microstructured and/or nanostructured structured substrate 8 , a silicon wafer here.
  • the structured substrate 8 has structuring having depressions on its surface pointing upward in the plane of the drawing, the depressions having a depth of approximately 100 ⁇ m to approximately 400 ⁇ m for MEMS.
  • the width or the diameter of the upper openings of these depressions is in the range of 200 ⁇ m to 100 ⁇ m or less for MEMS. Therefore, in at least some of the depressions, the opening is dimensioned significantly smaller than its depth.
  • the device 1 it is possible to coat the surface structure of the structured substrate 8 uniformly, particularly inside the depressions.
  • the depressions have a width of 20 nm and a depth of 40 nm, for example.
  • the structured substrate 8 is fixed on a carrier unit 9 (chuck) in a vacuum chamber 3 .
  • Vacuum grooves 10 are provided for fixing the structured substrate 8 on the carrier unit 9 .
  • a closable flap 7 is provided for charging the vacuum chamber 9 with the structured substrate 8 .
  • the flap 7 may also be designed as a cap.
  • the carrier unit 9 has a combined heating-cooling element 11 in order to heat and cool the carrier unit 9 and therefore the structured substrate 8 .
  • a combined heating-cooling element 11 With the aid of the combined heating-cooling element 11 , greatly varying temperature profiles and/or curves may be implemented.
  • the carrier unit 9 is rotatable using a motor 12 in the fixing plane of the structured substrate 8 , through which a uniform distribution of coating substance 24 may be achieved if it was not applied in atomized form.
  • a misting nozzle 14 is provided for charging the vacuum chamber 3 with coating substance, any type of atomizer nozzle and/or feed line being able to be provided as a nozzle.
  • This nozzle is situated directly above the surface of the structured substrate 8 to be coated and is preferably movably/slidingly disposed above the carrier unit 9 in order to optimally distribute coating substance 24 on structured substrate 8 .
  • the vacuum chamber 3 is connected via a vacuum line 13 to a vacuum system (not shown).
  • connection lines 5 each having a shutoff valve 6 , are provided in the floor of the vacuum chamber 3 .
  • the connection lines 5 connect the vacuum chamber 3 to a higher pressure level than the pressure level of the evacuated vacuum chamber 3 , preferably to the atmosphere or to an excess pressure pressure means store.
  • the structured substrate 8 is coated in the following way:
  • a structured substrate 8 is laid on the carrier element 9 using a robot via the opened flap 7 .
  • the vacuum chamber 3 is closed using the flap 7 .
  • the shutoff valves 6 are also closed at this time.
  • the structured substrate 8 is now sprayed with coating substance 24 by the misting nozzle 14 , preferably a surface activation agent, a solvent, or photoresist.
  • the coating substance 24 used is process-specific depending on the surface composition of the structured substrate 8 , and the structure of the pits or holes.
  • the carrier unit 9 may now be heated using the heating-cooling element 11 . Even during the heating of the carrier unit 9 and therefore the structured substrate 8 , the vacuum chamber 3 is evacuated via the vacuum line 13 .
  • the carrier unit 9 is cooled down using the heating-cooling element 11 . Subsequently, the shutoff valves 6 are opened, through which excess pressure flows suddenly into the vacuum chamber 3 and pushes the misted coating substance 24 into the depressions 8 v of the structured substrate 8 and thus ensures uniform coating.
  • the shutoff valves 6 may be opened already during or after the charging with coating substance 24 . Before opening the shutoff valves 6 , process-specific temperature profiles may be run through, through which a change of the consistency and/or rheological properties of the coating substance 24 is achieved.
  • a misting chamber 2 is provided in addition to the vacuum chamber 3 .
  • the construction of the vacuum chamber 3 having carrier unit 9 essentially corresponds to the construction shown in FIG. 1 .
  • the misting nozzle 14 shown in FIG. 2 may also be dispensed with, so that the charging with coating substance 24 is performed exclusively via the misting chamber 2 .
  • An intermediate wall is inserted between the floor of the vacuum chamber 3 and the structured substrate 8 , so that an intermediate chamber 4 is formed, in which the motor 12 of the carrier unit 9 is situated.
  • the pressure level of the intermediate chamber 4 corresponds to the pressure level of the vacuum chamber 3 .
  • the intermediate chamber 4 may also be operated at atmospheric pressure.
  • the shaft of the motor 12 is then sealed in the transition area between vacuum chamber 3 and intermediate chamber 4 .
  • connection lines 5 having their shutoff valves 6 do not connect the vacuum chamber 3 to the environment, but rather to the misting chamber 2 .
  • Heating elements 15 are located in the upper area of the misting chamber 2 in order to be able to heat the misting chamber 2 .
  • a peripheral step 16 is located below the heating elements 15 , which extends radially inward into the misting chamber 2 .
  • a floor plate 18 of the misting chamber 2 is connected via a peripherally closed folded bellows 17 to the step 16 .
  • the volume of the misting chamber 2 may be reduced or enlarged via an actuator 19 , the folded bellows 17 folding together or apart during the adjustment procedure.
  • a spray nozzle 20 is situated in the floor plate 18 for charging the misting chamber 2 with coating substance 24 .
  • Coating substance 24 preferably photoresist, solvent, or other chemicals, may be supplied to the misting chamber via a flexible connection line 21 and an adapter 22 .
  • the spray nozzle 20 is used for atomizing the coating substance 24 , through which the volume of the misting chamber 2 is fillable with coating substance mist.
  • an opening is provided inside the floor plate 18 , which is connected to a flexible drain line 23 . Via this, excess liquids, particularly coating substance 24 , which accumulates in the misting chamber 2 , may be removed.
  • the coating of structured substrates 8 in the device 1 shown in FIG. 2 is performed in the following way:
  • the structured substrate 8 may now optionally be sprayed with a chemical substance, preferably a coating substance 24 , by the nozzle 14 .
  • the structured substrate 8 is sprayed with a surface activation substance, a solvent, or photoresist.
  • the vacuum chamber 3 is evacuated.
  • the structured substrate 8 is first heated using the heating-cooling element 11 and then cooled again, preferably before the vacuum chamber 3 is charged with coating substance 24 .
  • the misting chamber 2 which is preferably heated via the heating elements 15 , is filled with a coating substance mist by the spray nozzle 20 .
  • the pressure level within the misting chamber 2 preferably corresponds to atmospheric pressure, but is higher than the pressure level of the evacuated vacuum chamber 3 in any case.
  • a precisely defined coating substance deposition on all vertical, deep geometric forms of the structured substrate 8 may be achieved. Equalization of the deposition is achieved through rotation of the carrier unit 9 . Possible excess liquid may also be thrown off.
  • FIGS. 3 to 7 a further, possible process sequence is illustrated.
  • a vacuum having an absolute pressure of less than 800 mbar, in particular less than 500 mbar, preferably 100 to 400 mbar absolute pressure is adjusted by means of a vacuum system connected to the vacuum line.
  • Adjusting the vacuum to the predetermined pressure has the advantage that structured substrate 8 attached to carrier unit 9 by partial vacuum remains fixed on carrier unit 9 due to the lower partial vacuum in comparison to the absolute pressure present in vacuum chamber 3 .
  • a further advantage of the absolute pressure range mentioned above is that the evaporation rate or speed of the solvent comprised in coating substance 24 is not too high, but takes place in a controlled and steady manner.
  • coating substance 24 is applied to structured substrate 8 or distributed on same.
  • the distribution occurs for example by rotating the structured substrate 8 at low speed of revolution, preferably between 8 and 40 revolutions per minute. While structured substrate 8 rotates, nozzle 14 is preferably moved parallel to the surface of the structured substrate and along the arm 14 a of nozzle 14 by linear motion, the coating substance 24 being preferably applied in a spiral fashion by the simultaneous rotation and reciprocating motion.
  • the coating substance volume flow discharging from nozzle 14 is chosen in such a way that the surface of the structured substrate 8 is wetted as completely as possible, i.e. preferably with a continuous coating substance layer.
  • the volume flow discharging from nozzle 14 can also be adjusted by means of a difference in pressure between the chamber 3 and a coating substance reservoir not depicted or by means of a controlled-volume pump.
  • the vacuum in vacuum chamber 3 draws coating substance 24 into vacuum chamber 3 and onto structured substrate 8 .
  • coating substance 24 normally does not (yet) flow completely into the depressions 8 v of structured substrate 8 or the topography of structured substrate 8 due to the surface tension of coating substance 24 .
  • coating substance 24 to structured substrate 8 can alternatively also occur without rotation of structured substrate 8 solely by moving arm 14 a of nozzle 14 .
  • a further alternative consists of disposing nozzle 14 above the center of structured substrate 8 and distributing coating substance 24 on same by rotating structured substrate 8 . Dosing of the coating substance volume discharging from nozzle 14 may also occur via a controlled-volume pump and thus be adjusted more precisely.
  • coating substance 24 already at least partially enters into the topography or depressions 8 v of structured substrate 8 , which depends in particular on the surface tension of coating substance 24 and the geometry of depressions 8 v.
  • a fluid containing in particular at least in part nitrogen and/or oxygen and/or an inert gas is admitted into vacuum chamber 3 .
  • Air is preferably used as fluid.
  • the inflow may occur because of a difference in pressure, application of external excess pressure also being possible.
  • coating substance 24 located on structured substrate 8 is pressed into depressions 8 v or the topography of structured substrate 8 and fills same, preferably completely. This is schematically shown by means of the arrows in FIG. 5 .
  • structured substrate 8 is unloaded from vacuum chamber 3 and disposed above a heating plate 11 . While structured substrate 8 approaches heating plate 11 , which preferably occurs slowly and with defined speed, structured substrate 8 and coating substance 24 located in depressions 8 v and coating substance 24 located on structured substrate 8 already heat up in a defined manner, whereby solvent and content matter of coating substance 24 to be evaporated are evaporated as slowly and defined as possible. Due to the comparatively high content of solvent in coating substance 24 , the coating substance volume decreases significantly and the coating 24 depicted in FIG. 7 that is homogeneously distributed on the topography or the surface of structured substrate 8 and the surface of depressions 8 v remains.
  • Typical heating parameters are for example 70° C. for 1 to 10 minutes at a distance of 5 mm from heating plate 11 and, subsequently, 1 to 10 minutes at a distance of 0 to 3 mm from the heating plate.
  • Typical coating substances 24 used in the coating system described above are: positive and negative photoresists, dielectric materials such as BCB and polyimides, protective coatings.
  • the coating substance is usually diluted prior to coating, the dilution taking place using the following diluting agents: acetone, PGMEA, MEK, NMP, IPA, or mesitylenes, or any combination thereof.
  • structured substrate 8 can also be placed directly on heating plate 11 and/or heated consecutively in a defined manner by means of different heating plates.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
US12/225,204 2006-03-28 2007-03-13 Device and Method for Coating a Micro-and/or Nano-Structured Structural Substrate and Coated Structural Substrate Abandoned US20090274872A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06006328.6 2006-03-28
EP06006328.6A EP1840940B8 (de) 2006-03-28 2006-03-28 Vorrichtung und Verfahren zum Beschichten eines mikro- und/oder nanostrukturierten Struktursubstrats
PCT/EP2007/002206 WO2007112833A1 (de) 2006-03-28 2007-03-13 Vorrichtung und verfahren zum beschichten eines mikro- und/oder nanostrukturierten struktursubstrats sowie beschichtetes struktursubstrat

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US13/367,663 Active US8586132B2 (en) 2006-03-28 2012-02-07 Device and method for coating a micro- and/or nano-structured structural substrate and coated structural substrate

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US20120108040A1 (en) * 2010-11-01 2012-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Vaporizing polymer spray deposition system
CN106345649A (zh) * 2016-11-22 2017-01-25 中国科学技术大学 一种涂布微纳颗粒的方法及其设备
US9595440B2 (en) 2010-11-01 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of using a vaporizing spray system to perform a trimming process

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WO2014114974A1 (en) * 2013-01-22 2014-07-31 Essilor International (Compagnie Générale d'Optique) Machine for coating an optical article with a predetermined coating composition and method for using the machine
DE102014104239A1 (de) 2014-03-26 2015-10-01 Ev Group E. Thallner Gmbh Verfahren zur Beschichtung von Kavitäten eines Halbleitersubstrats
NL2014598B1 (en) * 2015-04-08 2017-01-20 Suss Microtec Lithography Gmbh Method for coating a substrate.
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