US20070066192A1 - Wafer-edge polishing system - Google Patents

Wafer-edge polishing system Download PDF

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Publication number
US20070066192A1
US20070066192A1 US11/523,613 US52361306A US2007066192A1 US 20070066192 A1 US20070066192 A1 US 20070066192A1 US 52361306 A US52361306 A US 52361306A US 2007066192 A1 US2007066192 A1 US 2007066192A1
Authority
US
United States
Prior art keywords
wafer
buff
dresser
polishing
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/523,613
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English (en)
Inventor
Kenji Kumahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Assigned to ELPIDA MEMORY, INC. reassignment ELPIDA MEMORY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KUMAHARA, KENJI
Publication of US20070066192A1 publication Critical patent/US20070066192A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/04—Devices or means for dressing or conditioning abrasive surfaces of cylindrical or conical surfaces on abrasive tools or wheels
    • B24B53/053—Devices or means for dressing or conditioning abrasive surfaces of cylindrical or conical surfaces on abrasive tools or wheels using a rotary dressing tool

Definitions

  • the present invention relates to a wafer-edge polishing system and, more particularly, to the improvement of a wafer-edge polishing system for polishing the edge portion of a wafer.
  • Semiconductor devices are manufactured by using a wafer such as a single-crystal silicon wafer or compound semiconductor wafer, on which oxide films, nitride films, carbide films, polycrystalline films, metallic films etc. are formed by sputtering technique, CVD technique and the like.
  • the materials configuring those films may be deposited on the edge of the semiconductor wafer and the vicinity thereof.
  • the materials or films deposited on the edge portion of the wafer are unnecessary and often peeled off from the edge portion of the wafer during transportation of the wafer between different systems, such as between a cleaning system and a deposition system. If the deposited materials are peeled off from the wafer, the deposited materials may be a crucial contamination source against the product semiconductor devices. Thus, deposited materials should be removed using a wafer-edge polishing system at any time if desired.
  • the wafer-edge polishing system includes a cylindrical buff unit onto which a buff member such as made of polyurethane foam or rigid polyurethane resin is attached.
  • a buff member such as made of polyurethane foam or rigid polyurethane resin is attached.
  • Patent Publication JP-1995-40214A describes a wafer-edge polishing system, which is shown in FIG. 5 .
  • the wafer-edge polishing system may be referred to merely as “polishing system” hereinafter.
  • the polishing system includes a cylindrical buff member 31 which is rotatable with respect to the central axis 31 a thereof.
  • a slurry supply nozzle not shown is provided in the vicinity of the buff member 31 .
  • a semiconductor wafer 40 is pressed against the cylindrical surface of the buff member 31 at the edge of the semiconductor wafer 40 .
  • the semiconductor wafer 40 is slanted upward and downward, with the edge of the semiconductor wafer 40 being fixed at the contact point of the cylindrical surface of the buff member 31 , for polishing the entire edge portion of the semiconductor wafer 40 .
  • Patent publication as described above also shows another buff member, which is shown in FIG. 6 .
  • FIG. 7 shows the enlarged sectional view of the vicinity of the contact portion of the buff member 32 shown in FIG. 6 .
  • the buff member 32 is rotated with respect to the central axis 32 a thereof, and a slurry supply nozzle 34 supplies a slurry or polishing agent onto the vicinity of a groove 32 b configuring the contact portion of the buff member 32 .
  • the groove 32 b has a shape fitted to the edge portion of the semiconductor wafer 40 , thereby allowing the semiconductor wafer 40 not to be slanted during the polishing.
  • the slurry or polishing agent generally includes minute silica particles dispersed in an alkali or acidic liquid.
  • the buff member configured by polyurethane foam or polyurethane resin has a large number of minute cells (blowholes) on and inside the buff member. The minute cells assist the buff unit to retain thereon the slurry, thereby improving the polishing efficiency of the buff member.
  • polished particles peeled off from the wafer or contaminated slurry including the polished particles may enter the minute cells on the buff unit after an iterated polishing treatment, thereby clogging the minute cells.
  • the clogging of the minute cells prevents new slurry from entering the minute cells to lower the polishing efficiency of the buff member.
  • the buff unit should be replaced by a new buff unit having minute cells not clogged by the polished particles or contaminated slurry, to thereby improve the polishing efficiency.
  • the replacement of the buff unit reduces the through-put of the polishing treatment however.
  • the present invention provides a wafer-edge polishing system including: a wafer mount for mounting thereon a wafer; a polishing device movable toward and from the wafer mount and having a buff member for polishing an edge portion of the wafer mounted on the wafer mount; a dresser movable toward and from the polishing device for dressing the buff member of the polishing device.
  • the buff member having thereon polished particles or contaminated slurry can be dressed by the dresser without replacement of the buff unit within the polishing system, thereby reducing the frequency of the replacement of the buff unit, improving the polishing efficiency of the polishing system and improving the through-put of manufacturing the semiconductor devices.
  • FIG. 1 is a top plan view of a polishing system according to an embodiment of the present invention.
  • FIG. 2 is a side view of the polishing system of FIG. 1 .
  • FIG. 3 is a side view of the buff unit in the polishing system shown in FIG. 1 .
  • FIG. 4 is a perspective view showing the buff unit of FIG. 3 before being fixed onto the base pole.
  • FIG. 5 is a perspective view of a conventional polishing system.
  • FIG. 6 is a perspective view of another conventional polishing system.
  • FIG. 7 is an enlarged sectional view of a portion of the another conventional polishing system.
  • FIG. 1 shows a polishing system according to an embodiment of the present invention in a top plan view thereof
  • FIG. 2 shows the polishing system in a side view thereof
  • the polishing system generally designated by numeral 100
  • the polishing system includes a wafer mount 15 for mounting thereon a semiconductor wafer 40 , a pair of buff units 11 a, 11 b each having a buff member 18 for polishing the edge portion of the semiconductor wafer 40 , a dresser 12 for dressing the buff members 18 of the buff units 11 a, 11 b, a pair of slurry supply nozzles 13 a, 13 b for supplying a slurry to the contact portion between the edge of the semiconductor wafer 40 and the buff members 18 , and a pair of water nozzles 14 a, 14 b for supplying pure water to the contact portion between the buff members 18 and the dresser 12 .
  • the buff members 18 are rotatably fixed onto the top of base poles 16 disposed for the buff units 11 a, 11 b.
  • the dresser 12 is also rotatably fixed onto the top of a base pole 17 disposed for the dresser 12 . As shown in FIG. 2 , the semiconductor wafer 40 rotates in the clockwise direction, the buff units 11 a, 11 b rotate in the clockwise direction, and the dresser 12 rotates in the counter-clockwise direction.
  • the edge portion of the semiconductor wafer 40 mounted on the wafer mount 15 is polished by the buff members 18 , which are in turn dressed by the dresser 12 at the same time, whereby the dresser 12 assists the cylindrical buff members 18 to polish the edge portion of the semiconductor wafer 40 .
  • the semiconductor wafer 40 is fixed onto the wafer mount 15 by using vacuum contact.
  • the wafer mount 15 is associated with a displacement/rotation mechanism including an air cylinder, a stepping motor and a variable-speed motor, which are not specifically shown in the figure.
  • the wafer mount 15 is movable in the X- and Z-directions shown in FIG. 2 , and is rotatable with respect to the central axis thereof.
  • the air cylinder is provided with a pressure sensor for detecting the internal pressure, based on which the contact pressure between the semiconductor wafer 40 and the buff members 18 is controlled at a fixed pressure.
  • the dresser 12 is made of a cylindrical stainless steel plate, onto which minute synthetic diamond particles are fixed by an electro-depositing technique.
  • the dresser 12 is subjected to shaping for fixing the same onto the base pole 17 for the dresser 12 .
  • the base pole 17 for the dresser 12 is also associated with displacement/rotation mechanism including an air cylinder, a stepping motor and a variable-speed motor, similarly to the wafer mount 15 , which are not specifically shown in the drawings.
  • the base pole 17 for the dresser 12 is movable in X- and Z-directions and rotatable with respect to the central axis thereof.
  • the air cylinder is provided with a pressure sensor for detecting the internal pressure, based on which the contact pressure between the dresser 12 and the buff members 18 is controlled at a fixed pressure.
  • the slurry supply nozzles 13 a, 13 b are disposed at the location and angle such that the slurry used as the polishing agent is directly supplied onto the contact portion between the wafer 40 and the buff members 18 .
  • the water nozzle 14 a, 14 b are disposed at the location and angle such that the pure water is directly supplied onto the contact portion between the dresser 12 and the buff members 18 .
  • FIG. 3 is a side view of buff unit 11 b.
  • Buff unit 11 b includes the buff member 18 having a substantially cylindrical shape, a strut 19 penetrating the buff member 18 at the central bore thereof, an insertion member 21 formed at the bottom of the strut 19 , and a boss 20 protruding radially outside the insertion member 21 .
  • the buff member 18 is of an axial symmetry.
  • the buff member 18 is made of polyurethane foam having a hollow cylindrical shape, and the outer cylindrical surface of the buff member 18 has a depression at the central portion thereof as viewed in the axial direction.
  • the buff member 18 has a U-shaped sidewall, as viewed in the horizontal direction.
  • the U-shaped sidewall includes roughly a top flange-shaped portion, an upper curved portion 18 a of a truncated corn, a central depression, a lower curved portion 18 b of a truncated corn, and a bottom flange-shaped portion.
  • the buff member 18 may be made of rigid polyurethane resin instead.
  • FIG. 4 is a perspective view of buff unit 11 b before being mounted on top of the base pole 16 .
  • the buff unit 11 b is fixed onto the base pole 16 by the steps of aligning the boss 20 with a slot 22 of the base pole 16 , inserting the insertion member 21 into a hole 23 of the base pole 16 , and fixing buff unit 11 b on the base pole 16 by using thrust screws 24 . Removal of buff unit 11 b is effected in the order reversed from the recited order.
  • a semiconductor wafer 40 is delivered from a wafer cassette etc. by a wafer transportation system onto top of the wafer mount 15 .
  • the bottom surface of the semiconductor wafer 40 is absorbed by the top of the wafer mount 15 using vacuum contact, whereby the semiconductor wafer 40 is fixed on the wafer mount 15 .
  • the slurry supply nozzles 13 a, 13 b supply the slurry as a polishing agent in a specified amount, and the buff units 11 a, 11 b are rotated by the base poles 16 at a specified rotational speed.
  • the dresser 12 is rotated by the base pole 17 at a specified rotational speed, and then moves in the X-direction to contact the buff members 18 of the buff units 11 a, 11 b.
  • the contact pressure of the dresser 12 with respect to the buff members 18 is controlled by a pressure control mechanism including the air cylinder of the base pole 17 .
  • the semiconductor wafer 40 is rotated with respect to the central axis of the wafer mount 15 and moved in the X-direction to contact the buff members 18 of the buff units 11 a, 11 b at the edge of the semiconductor wafer 40 .
  • the contact pressure of the edge of the semiconductor wafer 40 with respect to the buff members 18 is controlled by the pressure control mechanism including the air cylinder of the wafer mount 15 .
  • the semiconductor wafer 40 , buff units 11 a, 11 b and dresser 12 are rotated by separate rotation mechanisms, and both the wafer 40 and dresser 12 are thrust or pressed against the buff members 18 at a specified contact pressure.
  • the semiconductor wafer 40 is moved in the X- and Z-directions while being rotated, with the edge of the wafer 40 being moved along and polished by the U-shaped sidewall of the buff members 18 .
  • the top and bottom bevels of the edge of the wafer 40 are polished by the curved portions 18 a, 18 b of the U-shaped sidewall of the buff members 18 .
  • the dresser 12 is also moved in the X- and Z-directions while being rotated, with the edge of the dresser 12 moving along and abrading the U-shaped sidewall of the buff members 18 . Abrasion of the buff members 18 by the dresser 12 allows the buff members 18 to expose a new surface thereof and removes the clogging of the minute cells by the polished particles or contaminated slurry, whereby the new surface of the buff members 18 is exposed at any time.
  • the semiconductor wafer 40 and dresser 12 periodically move in the Z-direction during polishing and dressing, wherein the periodical movement of he semiconductor wafer 40 in the Z-direction has a period same as that of the periodical movement of the dresser 12 in the Z-direction.
  • the periodical movement of the semiconductor wafer 40 is deviated by half the period in the phase from the phase of the periodical movement of the dresser 12 .
  • the dresser 12 is located at the lower curved portion 18 b of the buff members 18 .
  • the dresser 12 is located at the upper curved portion 18 a of the buff members 18 .
  • the polishing process advances to a sixth step, wherein the semiconductor wafer 40 is transferred by a wafer transportation system to a wafer cleaning system, wherein the remaining slurry is removed. Thereafter, the semiconductor wafer 40 is returned to the wafer cassette. A next semiconductor wafer is then supplied to the wafer mount 15 , and the water nozzles 14 a, 14 b supply pure water to the contact portion between the buff members 18 and the dresser 12 , whereby the buff members 18 are dressed by the dresser 12 for cleaning of the surface. Those first through sixth steps are iterated for polishing the edge portion of a number of semiconductor wafers 40 .
  • the dresser is installed in the polishing system which polishes the edge of semiconductor wafers, whereby both the polishing and dressing are performed in a single process.
  • This prevents clogging of the minute cells on the surface of the buff members, the clogging being caused by the polished particles or contaminated slurry and causing reduction in the polishing efficiency.
  • the present embodiment achieves a higher polishing efficiency and thus a higher through-put in the polishing.
  • dressing of the buff members gradually reduces the diameter of the buff members.
  • control of the contact pressure between the semiconductor wafer and the buff members as well as between the buff members and the dresser allows a continuous operation of the polishing and dressing irrespective of the reduction in the diameter of the buff members.
  • the in-situ dressing treatment is used, wherein the dressing is concurrently performed with the polishing.
  • the in-situ dressing treatment allows a plurality of semiconductor wafers to be polished in a continuous processing without replacement of buff units, thereby achieving a higher through-put in the polishing.
  • this is not essential to the present invention, and an ex-situ dressing may be performed in the present invention.
  • a single ex-situ dressing may be inserted at the interval between polishing of a wafer and polishing of another wafer, or between polishing of a plurality of wafers and polishing of another plurality of wafers.
  • the polishing system of the present invention may be used for polishing a wafer other than a semiconductor wafer.
  • wafer as used herein means a relatively thin and flat object, such as a disk or disk-like plate.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
US11/523,613 2005-09-21 2006-09-20 Wafer-edge polishing system Abandoned US20070066192A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005273777A JP2007088143A (ja) 2005-09-21 2005-09-21 エッジ研磨装置
JP2005-273777 2005-09-21

Publications (1)

Publication Number Publication Date
US20070066192A1 true US20070066192A1 (en) 2007-03-22

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US11/523,613 Abandoned US20070066192A1 (en) 2005-09-21 2006-09-20 Wafer-edge polishing system

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JP (1) JP2007088143A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110294406A1 (en) * 2010-06-01 2011-12-01 Sang-Min An Wafer polishing apparatus
CN105451938A (zh) * 2013-08-09 2016-03-30 福吉米株式会社 研磨加工工具以及构件的加工方法
CN105636743A (zh) * 2013-10-04 2016-06-01 福吉米株式会社 研磨装置、研磨构件的加工方法、研磨构件的修正方法、形状加工用切削工具以及表面修正用工具
CN105658377A (zh) * 2013-10-04 2016-06-08 福吉米株式会社 研磨装置以及研磨方法
JP2020175452A (ja) * 2019-04-15 2020-10-29 株式会社ディスコ 面取り加工装置
US20210069861A1 (en) * 2019-09-09 2021-03-11 Kioxia Corporation Grinding apparatus and grinding method
US11731240B2 (en) 2014-08-26 2023-08-22 Ebara Corporation Substrate processing apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009142913A (ja) * 2007-12-12 2009-07-02 Sumitomo Metal Mining Co Ltd ウェハーのベベル加工法とホイール型回転砥石
JP7247397B2 (ja) * 2018-03-23 2023-03-28 株式会社東京精密 ウェーハ面取り装置及びウェーハ面取り方法
JP7046668B2 (ja) * 2018-03-23 2022-04-04 株式会社東京精密 ウェーハ面取り装置及びウェーハ面取り方法

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US5658189A (en) * 1994-09-29 1997-08-19 Tokyo Seimitsu Co., Ltd. Grinding apparatus for wafer edge
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US6550091B1 (en) * 2000-10-04 2003-04-22 Lam Research Corporation Double-sided wafer edge scrubbing apparatus and method for using the same
US20030134570A1 (en) * 2002-01-15 2003-07-17 Speedfam Co., Ltd. Wafer edge polishing system
US6776692B1 (en) * 1999-07-09 2004-08-17 Applied Materials Inc. Closed-loop control of wafer polishing in a chemical mechanical polishing system
US6837777B2 (en) * 2000-03-29 2005-01-04 International Business Machines Corporation Wafer edge cleaning utilizing polish pad material
US6976903B1 (en) * 2000-09-22 2005-12-20 Lam Research Corporation Apparatus for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US7007333B1 (en) * 2002-06-28 2006-03-07 Lam Research Corporation System and method for a combined contact and non-contact wafer cleaning module

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US5609514A (en) * 1993-11-16 1997-03-11 Tokyo Seimitsu Co., Ltd. Wafer chamfering machine
US5658189A (en) * 1994-09-29 1997-08-19 Tokyo Seimitsu Co., Ltd. Grinding apparatus for wafer edge
US5944584A (en) * 1996-08-27 1999-08-31 Shin-Estu Handotai Co., Ltd. Apparatus and method for chamfering wafer with loose abrasive grains
US6357071B2 (en) * 1996-12-30 2002-03-19 Intel Corporation Rotating belt wafer edge cleaning apparatus
US20020052174A1 (en) * 1997-11-20 2002-05-02 Matsuomi Nishimura Polishing apparatus, cleaning apparatus to be used for such a polishing apparatus and polishing/cleaning method as well as method of making a wiring section
US6428397B1 (en) * 1998-06-25 2002-08-06 Unova U.K. Limited Wafer edge polishing method and apparatus
US6068549A (en) * 1999-06-28 2000-05-30 Mitsubishi Materials Corporation Structure and method for three chamber CMP polishing head
US6776692B1 (en) * 1999-07-09 2004-08-17 Applied Materials Inc. Closed-loop control of wafer polishing in a chemical mechanical polishing system
US6402596B1 (en) * 2000-01-25 2002-06-11 Speedfam-Ipec Co., Ltd. Single-side polishing method for substrate edge, and apparatus therefor
US6705930B2 (en) * 2000-01-28 2004-03-16 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US20010012751A1 (en) * 2000-01-28 2001-08-09 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US6869337B2 (en) * 2000-01-28 2005-03-22 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
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US6257954B1 (en) * 2000-02-23 2001-07-10 Memc Electronic Materials, Inc. Apparatus and process for high temperature wafer edge polishing
US6837777B2 (en) * 2000-03-29 2005-01-04 International Business Machines Corporation Wafer edge cleaning utilizing polish pad material
US6976903B1 (en) * 2000-09-22 2005-12-20 Lam Research Corporation Apparatus for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US6454637B1 (en) * 2000-09-26 2002-09-24 Lam Research Corporation Edge instability suppressing device and system
US6550091B1 (en) * 2000-10-04 2003-04-22 Lam Research Corporation Double-sided wafer edge scrubbing apparatus and method for using the same
US6402602B1 (en) * 2001-01-04 2002-06-11 Speedfam-Ipec Corporation Rotary union for semiconductor wafer applications
US20030134570A1 (en) * 2002-01-15 2003-07-17 Speedfam Co., Ltd. Wafer edge polishing system
US7007333B1 (en) * 2002-06-28 2006-03-07 Lam Research Corporation System and method for a combined contact and non-contact wafer cleaning module

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110294406A1 (en) * 2010-06-01 2011-12-01 Sang-Min An Wafer polishing apparatus
CN105451938A (zh) * 2013-08-09 2016-03-30 福吉米株式会社 研磨加工工具以及构件的加工方法
US20160167192A1 (en) * 2013-08-09 2016-06-16 Fujimi Incorporated Polishing tool and processing method for member
CN105636743A (zh) * 2013-10-04 2016-06-01 福吉米株式会社 研磨装置、研磨构件的加工方法、研磨构件的修正方法、形状加工用切削工具以及表面修正用工具
CN105658377A (zh) * 2013-10-04 2016-06-08 福吉米株式会社 研磨装置以及研磨方法
US20160236322A1 (en) * 2013-10-04 2016-08-18 Fujimi Incorporated Polishing device, processing method of polishing member, modification method of polishing member, shape processing cutting tool, and surface modification tool
US11731240B2 (en) 2014-08-26 2023-08-22 Ebara Corporation Substrate processing apparatus
JP2020175452A (ja) * 2019-04-15 2020-10-29 株式会社ディスコ 面取り加工装置
JP7317441B2 (ja) 2019-04-15 2023-07-31 株式会社ディスコ 面取り加工装置
US20210069861A1 (en) * 2019-09-09 2021-03-11 Kioxia Corporation Grinding apparatus and grinding method

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