US20060114003A1 - Specific absorption rate measuring system, and a method thereof - Google Patents

Specific absorption rate measuring system, and a method thereof Download PDF

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Publication number
US20060114003A1
US20060114003A1 US11/263,946 US26394605A US2006114003A1 US 20060114003 A1 US20060114003 A1 US 20060114003A1 US 26394605 A US26394605 A US 26394605A US 2006114003 A1 US2006114003 A1 US 2006114003A1
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Prior art keywords
electro
optical
light
absorption rate
biological tissue
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Abandoned
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US11/263,946
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English (en)
Inventor
Teruo Onishi
Ryo Yamaguchi
Shinji Uebayashi
Tadao Nagatsuma
Naofumi Shimizu
Hiroyoshi Togo
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NTT Docomo Inc
Nippon Telegraph and Telephone Corp
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NTT Docomo Inc
Nippon Telegraph and Telephone Corp
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Assigned to NIPPON TELEGRAPH AND TELEPHONE CORPORATION, NTT DOCOMO, INC. reassignment NIPPON TELEGRAPH AND TELEPHONE CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAGATSUMA, TADAO, ONISHI, TERUO, SHIMIZU, NAOFUMI, TOGO, HIROYOSHI, UEBAYASHI, SHINJI, YAMAGUCHI, RYO
Assigned to NTT DOCOMO, INC, NIPPON TELEGRAPH AND TELEPHONE CORPORATION reassignment NTT DOCOMO, INC RE-RECORD TO CORRECT ASSIGNEE'S ADDRESS PREVIOUSLY RECORDED ON REEL/FRAME 017533/0544 Assignors: NAGATSUMA, TADAO, ONISHI, TERUO, SHIMIZU, NAOFUMI, TOGO, HIROYOSHI, UEBAYASHI, SHINJI, YAMAGUCHI, RYO
Publication of US20060114003A1 publication Critical patent/US20060114003A1/en
Priority to US11/754,683 priority Critical patent/US7511511B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • G01R29/0885—Sensors; antennas; probes; detectors using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity

Definitions

  • the present invention relates to a biological tissue equivalent phantom unit (phantom unit) used by a specific absorption rate measuring system for evaluating absorption of electromagnetic wave energy; a specific absorption rate measuring system using the phantom unit; and a method thereof.
  • a SAR value is proportional to an electric field (
  • SAR ⁇
  • ⁇ and ⁇ represent conductivity [S/m] and density [kg/m3], respectively, of the biological tissue equivalent phantom.
  • an electric-field measuring method when measuring SAR, an electric-field measuring method is used, wherein a short dipole detects an electric field generated in a medium (live body), which electric field is converted into SAR using Equation 1.
  • FIG. 1 shows a conventional specific absorption rate measuring system 100 that includes
  • the electric field generated in the phantom is measured by arranging a measuring target instrument 108 , such as a cellular phone, near the specific absorption rate measuring system 100 as shown in FIG. 1 .
  • the probe 103 for detecting the electric field is scanned in three dimensions by the probe scanner 104 , and SAR is measured.
  • FIG. 2 shows another specific absorption rate measuring system 200 that includes
  • the electric field generated in the phantom is measured by arranging a measuring target instrument 127 , such as a cellular phone, near the specific absorption rate measuring system 200 as shown in FIG. 2 .
  • a measuring target instrument 127 such as a cellular phone
  • the cellular phone 127 is moved by the scanner 126 , and SAR is measured.
  • the probe 103 or 122 for detecting the electric field is required.
  • Each of the probes 103 and 122 for detecting the electric field includes a detecting element 110 as shown in detail on the right-hand side of FIG. 1 .
  • an electric field is detected by short dipole elements 111 and 112 .
  • the electric field is detected by a Schottky diode 113 inserted in a gap, and a detected result in the form of an electrical signal is provided to the corresponding electric-field detection apparatuses 106 and 124 through high resistance wires 114 . That is, the Schottky diode 113 detects a voltage generated by the short dipole elements 111 , 112 formed with conductors, the length of which is about 2 to 5 mm.
  • an electric-field sensor 300 using an optical waveguide type modulator and a laser beam has been developed as shown in FIG. 3 .
  • the electric-field sensor 300 includes a laser luminous source 131 , an electric-field probe 132 , an optical waveguide type modulator 133 , a minute dipole 134 that consists of metal, and an optical receiving unit 135 .
  • the electric-field sensor 300 is configured only by dielectric materials, except for the minute dipole 134 , it is capable of measuring the electric field with a precision that is higher than the electric-field detecting methods that use the high resistance wires.
  • the short dipole is used according to the electric-field measuring method using the electric-field sensor 300 , wherein the optical waveguide type modulator and the laser beam are used, the disturbance remains, although the disturbance becomes smaller than in the case of the electric-field measuring methods using the high resistance wires.
  • the probe for detecting the electric field, or a 3-dimensional electric-field sensor is moved in the liquid phantom for measuring SAR, the liquid (a phantom solvent) is agitated, and noise is generated by vibration of the probe or sensor. If a time until the solvent settles into a steady state is waited for in order to avoid the noise, measurement will take a long time.
  • the present invention provides a specific absorption rate measuring system, a biological tissue equivalent phantom unit, and a method thereof that substantially obviate one or more of the problems caused by the limitations and disadvantages of the related art.
  • the invention provides a specific absorption rate measuring system, a biological tissue equivalent phantom unit, and a method thereof as follows.
  • An aspect of the present invention provides a biological tissue equivalent phantom unit that is to be used by a specific absorption rate measuring system for evaluating absorption of electromagnetic wave energy.
  • the biological tissue equivalent phantom unit includes
  • a high dielectric constant material is applied to the surface of the optical fibers of the biological tissue equivalent phantom unit.
  • Another aspect of the present invention provides a specific absorption rate measuring system for evaluating the absorption of the electromagnetic wave energy using the biological tissue equivalent phantom unit.
  • the specific absorption rate measuring system includes
  • Another aspect of the present invention provides a specific absorption rate measuring method of evaluating absorption of the electromagnetic wave energy using the biological tissue equivalent phantom that receives irradiation of the electromagnetic wave.
  • the specific absorption rate measuring method includes
  • the step of reflecting the light that is provided to the electro-optical crystals of the specific absorption rate measuring method is a step of reflecting the light by a dielectric reflective film prepared on a surface countering a surface, through which the light is provided, of the electro-optical crystal.
  • the step of sequentially providing the light to each of the electro-optical crystals through the optical-path switcher of the specific absorption rate measuring method is a step of sequentially providing the light to each of the electro-optical crystals by selecting an optical fiber by the optical-path switcher, wherein the optical-path switcher is connected to each of the electro-optical crystals.
  • a high dielectric constant material is applied to the surface of the optical fiber such that the equivalent dielectric constant of the optical fiber becomes substantially equal to the dielectric constant of the biological tissue equivalent phantom.
  • the electric-field detecting element is constituted by nonmetallic materials, it is possible to measure the SAR distribution without the disturbance that is generated in the case of the conventional technology. Further, since the electro-optical crystals having a dielectric constant approximately equal to that of the phantom are used as a sensor head, reflection due to difference of the dielectric constants is reduced, and the SAR distribution can be more accurately measured. Furthermore, since spatial resolution of the measurement is proportional to a diameter of a beam of the light that penetrates the electro-optical crystal, the spatial resolution can be raised, theoretically, to as small as the wavelength of the light (several ⁇ m). Furthermore, since a change in a refractive index of the electro-optical crystal at the measuring point depends on deviation of a dipole that follows the electromagnetic wave, the SAR measurement is available in a wide band range, from the MHz band to the THz band.
  • the present invention disturbance of the electric field in the electro-optical crystal by interface reflection is reduced, and the influence of the interface reflection on the electromagnetic field near the electro-optical crystals is reduced by using the electro-optical crystal that has a dielectric constant approximately equal to that of the phantom. Therefore, the specific absorption rate measuring system capable of obtaining an accurate SAR distribution is realized.
  • FIG. 1 is a schematic diagram of a conventional specific absorption rate measuring system 100 ;
  • FIG. 2 a schematic diagram of another conventional specific absorption rate measuring system 200 ;
  • FIG. 3 is a schematic diagram of another conventional specific absorption rate measuring system 300 using an optical waveguide type modulator, a laser beam, and an electric-field sensor;
  • FIG. 4 is a block diagram of a specific absorption rate (SAR) measuring system according to an embodiment of the present invention
  • FIG. 5 is a perspective diagram showing a phantom according to the embodiment of the present invention.
  • FIG. 6 gives a graph showing an error of field strength in an electro-optical crystal, the error being due to difference in dielectric constants.
  • FIG. 4 is a block diagram of a specific absorption ratio measuring system 40 according to the embodiment of the present invention.
  • the specific absorption rate measuring system 40 includes a biological tissue equivalent phantom unit 42 that is constituted by a simulated human body (phantom) 1 consisting of liquid, gel, a solid-state object, etc., for simulating the electric constant of the human body, electro-optical crystals 3 that have a dielectric constant approximately equal to that of the phantom 1 , and bare fibers 10 .
  • phantom simulated human body
  • electro-optical crystals 3 that have a dielectric constant approximately equal to that of the phantom 1
  • bare fibers 10 bare fibers
  • the specific absorption rate measuring system 40 further includes
  • the specific absorption rate measuring unit 44 includes an analyzer 11 , a photodetector 12 , an electrical signal line 13 , a signal processing unit 14 , and a SAR distribution image display 15 .
  • the specific absorption rate measuring system 40 is for measuring an electric field in the phantom 1 using the electro-optical crystals 3 , the electric field being generated by the electromagnetic wave generator 2 (such as a cellular phone) arranged near the phantom 1 , as shown in FIG. 4 .
  • the electromagnetic wave generator 2 such as a cellular phone
  • the linearly polarized light irradiated by the luminous source 4 is provided to the polarization regulator 7 via the circulator 6 and the polarization maintenance fiber (PMF) 5 .
  • the polarization regulator 7 changes the polarization of the linearly polarized light into a predetermined polarization state, and outputs the light.
  • the polarization state is determined by a crystallographic axis of the electro-optical crystal 3 arranged in the phantom 1 and a vibrating direction of the electric field generated by the electromagnetic wave generator 2 .
  • CdTe which is a lead marcasite type crystal
  • crystallographic faces (001) (100), and (010) of CdTe are perpendicularly arranged to the y, x, and the z axes, respectively; or to the y, z, and x axes, respectively; and the polarization regulator 7 is adjusted so that the polarization axis of the linear polarization or an elliptical polarization may become parallel to the x axis or the z axis.
  • the light is transmitted via the single mode fiber (SMF) 8 to the optical-path switcher 9 , then to the electro-optical crystals 3 .
  • SMF single mode fiber
  • the light is reflected by a dielectric reflective film prepared on a surface of the electro-optical crystal 3 , the surface countering a surface through which the light is provided, and the light goes back along the incidence path.
  • a phase difference arises between components of the predetermined polarization due to a refractive-index change (Pockels effect) that is proportional to the field strength to the first power that is applied, and the polarization state is changed, i.e., polarization modulation occurs.
  • ⁇ , n 0 , r 41 , E, and d represent the wavelength [m] of the incident light, the refractive index of the electro-optical crystal 3 , the Pockels constant [m/V], field strength [V/m], and the length [m] of the electro-optical crystal 3 in a direction of the oscillation of the electric field, respectively.
  • the light that is reflected and polarization-modulated reaches the circulator 6 through the optical-path switcher 9 and the polarization regulator 7 ; then, the light is branched to the analyzer 11 by the circulator 6 .
  • the modulation component of the branched light is taken out by the analyzer 11 , and is converted into an electrical signal by the photodetector 12 .
  • the amplitude of the electrical signal is proportional to the field strength of the electromagnetic wave that is measured.
  • the amplitude of the electrical signal is converted into a SAR value by the signal processing unit 14 .
  • Such values, with position information attached, constitute a SAR distribution that can be displayed by the SAR distribution image display 15 .
  • the specific absorption rate (SAR) is defined by Equation 1.
  • SAR can be defined by the following Equation 3, based on Equations 1 and 2.
  • SAR ⁇ K
  • K is a constant determined by the crystallographic axis of the electro-optical crystal 3 and the vibrating direction of the electric field irradiated by the electromagnetic wave generator 2 .
  • the constant K can be expressed by the following Equation 4 when CdTe is arranged as described above.
  • K ⁇ /(2 ⁇ n 0 3 r 41 d ) [Equation 4]
  • the electric-field detecting element is constituted from dielectric materials, the disturbance to the electromagnetic field to be measured is removed, the disturbance conventionally being due to the aggregate of the short dipoles, and the disturbance being the problem with the conventional electric-field measuring method.
  • the dielectric constants of the phantom 1 are prescribed by ARIB.
  • reflection (Fresnel reflection) of the electromagnetic wave can arise at the interface between the phantom 1 and the electro-optical crystal 3 depending on the kind of the electro-optical crystal 3 according to the difference in the dielectric constants, such reflection is very small as compared with the disturbance due to the aggregate of short dipoles.
  • FIG. 6 shows the field strength in the electro-optical crystal 3 in consideration of the reflection at the interface when there is no absorption of the electromagnetic wave within the electro-optical crystal 3 .
  • a model is assumed wherein the electromagnetic wave is perpendicularly provided to the electro-optical crystal 3 that is semi-infinite in size, and as the relative permittivity of the phantom, a value 40.5 at 1450 MHz that is specified by ARIB is used.
  • Calculation results show that a true value can be obtained by compensating for the electric field that is measured by about 10% for the reflection in the case of CdTe. Further, it is considered that the influence on the measured electromagnetic field by the reflection is proportional to an area ratio that the electro-optical crystal 3 occupies.
  • the minimum spatial resolution of the SAR measurement is 1 mm
  • the minimum processing size of the electro-optical crystal 3 is about 100 ⁇ m
  • the reflection factor per mm 2 is converted by the area ratio, it becomes about 1% of 1/100, which can practically be disregarded.
  • electro-optical crystals that have a dielectric constant value approximately equal to the dielectric constant value of the phantom are used, such electro-optical crystals including LN, LT, and KD*P.
  • the electrical properties of LN, LT, and KD*P and the error in the measured electric field due to the reflection are shown in Table 1.
  • the diameter of a common bare fiber is 250 ⁇ m including a covering layer, and the reflection factor per mm 2 of the cross section is 1/16 (about 1.8%).
  • the covering layer is provided in consideration of a micro bend property at low temperatures.
  • a clad fiber having a diameter of 80 ⁇ m without a covering layer can be used. By using the clad fiber, the reflection factor per mm 2 can be lowered to 0.2% or less.
  • the number of the bare fibers 10 on the optical-path switcher 9 side per mm 2 is N, and the reflection factor per mm 2 becomes less than 0.2 ⁇ N %. If the reflection factor is tolerated to be up to 10%, the number of the electro-optical crystals 3 that can be arranged in the direction of the y-axis becomes 50. If they are arranged at intervals of 1 mm, the length wherein the electro-optical crystals 3 are arranged in the direction of the y-axis is 50 mm. Since the size of the phantom that simulates the head is about 300 mm, the reflection by the optical-path switcher 9 may become great.

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US20090262349A1 (en) * 2006-06-16 2009-10-22 Institut National Polytechnique De Grenoble Electrooptic probe for vector measurement of an electromagnetic field
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US20070063905A1 (en) * 2003-08-18 2007-03-22 Soicete D'application Technologiques De Device for controlling the specific absorption rate of mass-produced radiant objects
US7782262B2 (en) * 2003-08-18 2010-08-24 Societe d'Applications Technologiques de l'Imagerie Micro Ondes Device for controlling the specific absorption rate of mass-produced radiant objects
US8264685B2 (en) * 2006-06-16 2012-09-11 Institut National Polytechnique De Grenoble Electrooptic probe for vector measurement of an electromagnetic field
US20090262349A1 (en) * 2006-06-16 2009-10-22 Institut National Polytechnique De Grenoble Electrooptic probe for vector measurement of an electromagnetic field
US20090298191A1 (en) * 2006-10-18 2009-12-03 President And Fellows Of Harvard College Lateral Flow and Flow-through Bioassay Devices Based On Patterned Porous Media, Methods of Making Same, and Methods of Using Same
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CN1769926A (zh) 2006-05-10
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CN100388008C (zh) 2008-05-14
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CA2525158C (en) 2011-04-19
US20070236229A1 (en) 2007-10-11
US7511511B2 (en) 2009-03-31
KR20060052388A (ko) 2006-05-19

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