US20060008593A1 - Device for carrying out a plasma-assisted process - Google Patents

Device for carrying out a plasma-assisted process Download PDF

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Publication number
US20060008593A1
US20060008593A1 US10/529,531 US52953105A US2006008593A1 US 20060008593 A1 US20060008593 A1 US 20060008593A1 US 52953105 A US52953105 A US 52953105A US 2006008593 A1 US2006008593 A1 US 2006008593A1
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US
United States
Prior art keywords
magnetron
face
treated
electrode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/529,531
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English (en)
Inventor
Pierre Fayet
Bertrand Jaccoud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tetra Laval Holdings and Finance SA
Original Assignee
Tetra Laval Holdings and Finance SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tetra Laval Holdings and Finance SA filed Critical Tetra Laval Holdings and Finance SA
Assigned to TETRA LAVAL HOLDINGS & FRANCE S.A. reassignment TETRA LAVAL HOLDINGS & FRANCE S.A. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FAYET, PIERRE, JACCOUD, BERTRAND
Publication of US20060008593A1 publication Critical patent/US20060008593A1/en
Priority to US11/934,939 priority Critical patent/US20080060933A1/en
Priority to US12/691,408 priority patent/US8101246B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Definitions

  • the invention relates to a device for carrying out a plasma enhanced process, in particular a plasma enhanced chemical vapour deposition.
  • the device serves e.g. for coating one side of a web of film or sheet material, in particular for coating a web of polymer film with silicon oxide in order to improve its barrier properties.
  • the magnetron described in the publication EP-0299754 is a flat magnetron of a balanced or unbalanced type.
  • the degree of unbalance of a flat magnetron depends on the strength ratio of the magnetic pole or poles positioned on either side of the track running around the magnetron face, i.e. on the ratio between the number of magnetic field lines extending from north to south poles across the track to the number of field lines not doing so.
  • the unbalanced magnetron is known to not fully confine electrons and ions of the plasma such that there is a limited amount of electron and ion bombardment of the substrate which is said to improve the deposition quality.
  • the magnetron face of the unbalanced magnetron according to EP-0299754 comprises peripheral north poles and a central core of soft iron, resulting in an only small portion of the field lines extending from the north poles to the core (highly unbalanced magnetron).
  • Publication EP-0605534 (BOC) describes a similar plasma enhanced chemical vapour deposition process wherein the substrate is a web.
  • the web is carried by a rotating drum which constitutes the powered electrode and is negatively biased. Facing the web carried by the drum there is an electrically grounded and possibly cooled shield the back side of which is faced by at least one pair of opposing magnetic poles, preferably a series of alternating magnetic poles. Aided by the magnetic field the plasma is confined between the drum and the shield.
  • the advantage of the arrangement is seen in the decoupling of the electric and the magnetic field, which is said to lead to an extension of the plasma throughout the plasma volume (between drum and shield).
  • the distance between drum and shield is described as having to be within the range of 1 to 30 cm.
  • the object of the invention is to improve the above named devices applicable for plasma enhanced processes, in particular for plasma enhanced chemical vapour deposition but also for e.g. plasma etching or plasma processes for changing the wetability or adhesion characteristics of a surface and belonging to the type being based on a magnetron.
  • the improvement is to regard in particular process efficiency. For a deposition process deposition rate and deposition quality are to be improved.
  • the device according to the invention comprises a vacuum chamber and within the chamber at least one magnetron electrode comprising an unbalanced magnetic pole arrangement and means for positioning a substrate with a surface to be treated facing the magnetron electrode and serving as counter electrode.
  • Either electrode is powered with an alternating voltage.
  • the magnetron electrode is powered and the substrate or the positioning means carrying the substrate is electrically grounded, electrically floating or negatively biased.
  • the distance between the magnetron face and the surface of the substrate to be treated is adapted to the characteristics of the magnetic field created by the permanent magnet poles of the magnetron face, being defined mainly by the magnetic strength of the poles, by the degree of unbalance of the pole arrangement and by the width of the track between the magnetic poles.
  • the above discussed setting of the distance between the magnetron face and the substrate to be dependent on the characteristics of the magnetic field can easily be based on such observation.
  • the surface to be coated is positioned beyond the tunnels such that there is a bright plasma band extending between the tunnels and the surface to be treated, the band having a minimum width but having towards the surface to be coated a homogeneous brightness, i.e. the same brightness at positions above tunnels as at a position above the gap between tunnels.
  • FIG. 1 shows the principle of the device according to the invention
  • FIGS. 2 and 3 show an exemplified magnetron electrode applicable in the device according to the invention ( FIG. 2 : top view of the magnetron face; FIG. 3 : section perpendicular to the magnetron face, section line III-III in FIG. 2 );
  • FIG. 4 shows a preferred embodiment of the device according to the invention, serving for coating a web of flexible material, e.g. for coating a polymer film material with silicon oxide for improving its barrier properties.
  • FIG. 1 shows the magnetic field of a flat unbalanced magnetron in a section perpendicular to the magnetron face.
  • Three permanent magnets 1 are arranged alternately, their poles on one side being connected by a piece 2 of a magnetizeable material, e.g. soft iron.
  • the poles opposite the connecting piece 2 form the flat magnetron face (plane A) which comprises e.g. a central north pole and peripheral south poles, the north pole e.g. having the same strength as each one of the south poles.
  • plane A which comprises e.g. a central north pole and peripheral south poles, the north pole e.g. having the same strength as each one of the south poles.
  • means for establishing an alternating electric field with electric field lines extending substantially perpendicular to the magnetron face, e.g. an electrode piece extending over the magnetron face and being powered by an alternating voltage (see FIG. 3 ).
  • the pole arrangement of the face of an unbalanced magnetron creates a first portion of magnetic field lines 10 extending from north pole to either one of the south poles such forming the tunnel 11 on the base of which electrons and ions are confined and another portion of field lines 10 ′ originating elsewhere and ending in the south poles.
  • the extension of the tunnels 11 (plane B) above the magnetron face is dependent on the magnetic strength of the poles, on the distance between the poles (width of track) and on the ratio of the strengths of central and peripheral poles (degree of unbalance of the magnetron).
  • the substrate surface to be treated (plane C) is positioned such that it is definitely outside of the tunnels 11 but as near as possible to the magnetron face A.
  • the distance between planes A and C is preferably at least 2% larger than the distance between planes A and B, even more preferably between 2 and 20% larger than the distance between planes A and B.
  • FIGS. 2 and 3 show an exemplified embodiment of a magnetron electrode applicable for the inventive device.
  • the magnetron electrode has a flat, rectangular face and is again of the unbalanced type.
  • FIG. 2 shows the face of the magnetron
  • FIG. 3 shows a section perpendicular to the magnetron face (section line III-III of FIG. 2 ) and a substrate positioned facing the magnetron electrode e.g. for being coated.
  • the magnetron electrode comprises alternately arranged permanent magnets 1 .
  • a peripheral arrangement of north poles and a central line of south poles (or five bar shaped permanent magnets with opposite poles on opposite longitudinal sides) constitute the magnetron face 20 which is covered by a powered electrode piece 21 being made of a non magnetizeable material, e.g. of aluminium, stainless steel or copper and being connected to a source 22 of a high frequency alternating voltage. The same material is preferably used for filling the gaps 23 between the permanent magnets 1 .
  • the magnetic poles facing away from the magnetron face are connected by a connecting piece 2 of a mangetizeable material e.g. of soft iron.
  • a peripheral wall 24 surrounding the permanent magnets is preferably made of a magnetizeable material also.
  • the substrate to be treated is e.g. a web 25 being supported by a grounded support 26 , along which the web is moved continuously (arrow 28 ).
  • the support 26 may also be electrically floating or negatively biased.
  • the plasma is confined between the magnetron face and the substrate, optimum deposition being achieved with a distance A-C fulfilling the above described conditions.
  • the process gas mixture is flown through the plasma space, e.g. in the manner as illustrated by arrows 27 .
  • FIG. 4 shows an exemplified embodiment of the inventive device, which embodiment serves for coating or otherwise treating a web of a flexible substrate material.
  • the substrate 25 is transported by a rotating drum 30 constituting the support 26 for the substrate 25 .
  • the web is unwound from a first supply roll 31 and wound onto a second supply roll 31 .
  • a plurality of magnetron electrodes 32 as illustrated by FIGS. 2 and 3 is arranged.
  • the magnetron faces face towards the drum 30 and their length is arranged parallel to the drum axis.
  • Gas supply lines 33 e.g.
  • tubes comprising a line of gas supply apertures) for supplying the process gas mixture are arranged extending parallel to the drum axis between the magnetron electrodes 32 .
  • the arrangement of drum 30 , supply rolls 31 , magnetron electrodes 32 and gas supply lines 33 is arranged in a not shown vacuum chamber equipped with means for removing gas from the chamber and keeping the inside of the chamber at a constant reduced pressure.
  • Each magnetron electrode 32 is advantageously electrically powered by its own power supply 34 .
  • the process gas flows mainly from the supply lines 33 towards the drum faces from where it is evacuated.
  • each magnetron face being 600 mm long and 150 mm wide and each magnetron face comprising a central permanent magnet of a magnetic induction of ca. 100 Gauss (10 ⁇ 2 Tesla) and peripheral permanent magnets of ca. 200 Gauss being arranged around the central magnet with a distance between the poles of ca. 50 mm is used for coating a polymer film with silicon oxide using a plasma derived from a process gas mixture comprising an organosilicon compound and oxygen.
  • the magnetron faces are positioned at a distance from the drum circumferential surface of ca.
  • the magnetrons are powered with a total of 14 kW per m 2 of magnetron face at a frequency of 40 kHz.
  • the deposition rate such achieved is ca. 3 nm per second with a high barrier quality and high reliability. Alterations of the distance between magnetron faces and drum circumferential surface in either direction result in a relevant reduction of the deposition rate.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
US10/529,531 2002-10-03 2003-09-09 Device for carrying out a plasma-assisted process Abandoned US20060008593A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/934,939 US20080060933A1 (en) 2002-10-03 2007-11-05 Device for carrying out a plasma-assisted process
US12/691,408 US8101246B2 (en) 2002-10-03 2010-01-21 Device for carrying out a plasma-assisted process

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH01653/02A CH707466B1 (de) 2002-10-03 2002-10-03 Vorrichtung zur Durchführung eines Plasma-unterstützten Prozesses.
CH1653/02 2002-10-03
PCT/CH2003/000610 WO2004031441A1 (de) 2002-10-03 2003-09-09 Vorrichtung zur durchführung eines plasma-unterstützten prozesses

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/934,939 Continuation US20080060933A1 (en) 2002-10-03 2007-11-05 Device for carrying out a plasma-assisted process

Publications (1)

Publication Number Publication Date
US20060008593A1 true US20060008593A1 (en) 2006-01-12

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
US10/529,531 Abandoned US20060008593A1 (en) 2002-10-03 2003-09-09 Device for carrying out a plasma-assisted process
US11/934,939 Abandoned US20080060933A1 (en) 2002-10-03 2007-11-05 Device for carrying out a plasma-assisted process
US12/691,408 Expired - Fee Related US8101246B2 (en) 2002-10-03 2010-01-21 Device for carrying out a plasma-assisted process

Family Applications After (2)

Application Number Title Priority Date Filing Date
US11/934,939 Abandoned US20080060933A1 (en) 2002-10-03 2007-11-05 Device for carrying out a plasma-assisted process
US12/691,408 Expired - Fee Related US8101246B2 (en) 2002-10-03 2010-01-21 Device for carrying out a plasma-assisted process

Country Status (10)

Country Link
US (3) US20060008593A1 (zh)
EP (1) EP1546434B1 (zh)
JP (1) JP4693414B2 (zh)
KR (1) KR100977891B1 (zh)
CN (1) CN100402697C (zh)
AU (1) AU2003258439A1 (zh)
BR (1) BR0314537B1 (zh)
CH (1) CH707466B1 (zh)
MX (1) MXPA05003537A (zh)
WO (1) WO2004031441A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100313810A1 (en) * 2007-02-13 2010-12-16 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Continuous film forming apparatus
US20120164353A1 (en) * 2009-09-05 2012-06-28 John Madocks Plasma enhanced chemical vapor deposition apparatus
US20120251738A1 (en) * 2011-03-31 2012-10-04 Synos Technology, Inc. Magnetic field assisted deposition
EP3736353A1 (en) * 2011-12-28 2020-11-11 Dai Nippon Printing Co., Ltd. Vapor deposition apparatus having pretreatment device that uses plasma

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AU2003299015A1 (en) 2002-09-19 2004-04-08 Applied Process Technologies, Inc. Beam plasma source
US7411352B2 (en) 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
JP5040067B2 (ja) * 2005-03-31 2012-10-03 大日本印刷株式会社 成膜装置及び成膜方法
JP4747658B2 (ja) * 2005-04-22 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
JP4747665B2 (ja) * 2005-05-11 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
US8698400B2 (en) * 2009-04-28 2014-04-15 Leybold Optics Gmbh Method for producing a plasma beam and plasma source
PT2251453E (pt) 2009-05-13 2014-03-13 Sio2 Medical Products Inc Retentor de vaso
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
EP2776603B1 (en) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
WO2014071061A1 (en) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Coating inspection method
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
CN105392916B (zh) 2013-03-11 2019-03-08 Sio2医药产品公司 涂布包装材料
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
EP2971227B1 (en) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Coating method.
EP3693493A1 (en) 2014-03-28 2020-08-12 SiO2 Medical Products, Inc. Antistatic coatings for plastic vessels
JP6329110B2 (ja) * 2014-09-30 2018-05-23 芝浦メカトロニクス株式会社 プラズマ処理装置
KR101632398B1 (ko) * 2014-10-31 2016-06-21 (주)에스엔텍 플라즈마 화학기상 장치
EP3337915B1 (en) 2015-08-18 2021-11-03 SiO2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
WO2017077106A1 (de) 2015-11-05 2017-05-11 Bühler Alzenau Gmbh Vorrichtung und verfahren zur vakuumbeschichtung

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US4863756A (en) * 1985-06-14 1989-09-05 Leybold Aktiengesellschaft Method and equipment for coating substrates by means of a plasma discharge using a system of magnets to confine the plasma
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method

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US4863756A (en) * 1985-06-14 1989-09-05 Leybold Aktiengesellschaft Method and equipment for coating substrates by means of a plasma discharge using a system of magnets to confine the plasma
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100313810A1 (en) * 2007-02-13 2010-12-16 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Continuous film forming apparatus
US8303714B2 (en) 2007-02-13 2012-11-06 Kobe Steel, Ltd. Continuous film forming apparatus
US20120164353A1 (en) * 2009-09-05 2012-06-28 John Madocks Plasma enhanced chemical vapor deposition apparatus
US20120251738A1 (en) * 2011-03-31 2012-10-04 Synos Technology, Inc. Magnetic field assisted deposition
US8697198B2 (en) * 2011-03-31 2014-04-15 Veeco Ald Inc. Magnetic field assisted deposition
EP3736353A1 (en) * 2011-12-28 2020-11-11 Dai Nippon Printing Co., Ltd. Vapor deposition apparatus having pretreatment device that uses plasma
US11680322B2 (en) 2011-12-28 2023-06-20 Dai Nippon Printing Co., Ltd. Method for forming a laminated film on a substrate

Also Published As

Publication number Publication date
US20100116644A1 (en) 2010-05-13
JP4693414B2 (ja) 2011-06-01
US20080060933A1 (en) 2008-03-13
KR100977891B1 (ko) 2010-08-24
EP1546434B1 (de) 2011-07-27
BR0314537A (pt) 2005-07-26
JP2006501367A (ja) 2006-01-12
AU2003258439A1 (en) 2004-04-23
EP1546434A1 (de) 2005-06-29
BR0314537B1 (pt) 2012-07-10
CN100402697C (zh) 2008-07-16
CN1688745A (zh) 2005-10-26
KR20050065574A (ko) 2005-06-29
WO2004031441A1 (de) 2004-04-15
US8101246B2 (en) 2012-01-24
MXPA05003537A (es) 2005-06-03
CH707466B1 (de) 2014-07-15

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Owner name: TETRA LAVAL HOLDINGS & FRANCE S.A., SWITZERLAND

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