US20050286581A1 - Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device - Google Patents
Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device Download PDFInfo
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- US20050286581A1 US20050286581A1 US11/090,182 US9018205A US2005286581A1 US 20050286581 A1 US20050286581 A1 US 20050286581A1 US 9018205 A US9018205 A US 9018205A US 2005286581 A1 US2005286581 A1 US 2005286581A1
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- semiconductor laser
- laser device
- lead
- laser chip
- housing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
Abstract
A semiconductor laser device includes a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion, a second lead extending along the lead portion of the first lead, and a retention portion made of an insulative material that integrally retains the first lead and the second lead. The mounting portion of the first lead has a back surface exposed from the retention portion, and the first lead further has a tie bar portion projecting from the mounting portion along the back surface of the mounting portion.
Description
- This nonprovisional application claims priority under 35 U.S.C. §119(a) on Patent Application Nos. 2004-098613, 2004-127635, 2004-186259, 2004-193503, 2004-192960, and 2005-012554, filed in Japan on 30 Mar. 2004, 23 Apr. 2004, 24 Jun. 2004, 30 Jun. 2004, 30 Jun. 2004, and 20 Jan. 2005, respectively, the entire contents of which are hereby incorporated by reference.
- The present invention relates to an optical pickup device for reading information recorded on an optical recording medium and/or writing a signal on an optical recording medium, a semiconductor laser device and a housing usable for the optical pickup device and a method of manufacturing such a semiconductor laser device.
- Semiconductor laser devices are widely used as components of optical pickup devices in order to read the information recorded on information recording media such as CD-ROM (Compact Disc Read-Only Memory), MD (Mini Disc) and so on. The semiconductor laser devices include a frame type semiconductor laser device as disclosed in JP 2002-43679 A. The frame type semiconductor laser device has a package in which a metal lead frame and a plurality of leads that serve as electrodes are integrated with a resin (outer casing). A semiconductor laser chip (“laser chip”) is mounted in an element-placing portion (a portion on which a chip is to be mounted) of the lead frame, and the laser chip and the electrode leads are electrically connected to each other via wires. JP 2002-43679 A is intended to improve the heat dissipation efficiency by providing the lead frame with wing portions projecting from side surfaces of the resin.
- However, recent optical pickup devices often employ high-power laser chips, and it is necessary to further improve the heat dissipation characteristics of the laser chips.
- JP 2002-43679 A also discloses an example in which the laser chip is mounted in the element-mounting portion via a submount. In this example, the submount is constructed of a Si substrate with a built-in monitoring photodetector, and the laser chip is mounted on the substrate with solder or the like. In operation, the laser chip emits laser light forward and also backward. The laser light emitted backward is partially incident on the monitoring photodetector, and the laser light to be emitted forward from the laser chip is controlled on the basis of the output of the monitoring photodetector.
- However, in this example, the greater part of the laser light emitted backward from the laser chip is not incident on the monitoring photodetector due to restrictions on the arrangement of the laser chip and the submount. Therefore, the quantity of light incident on the monitoring photodetector may be so little that it may cause inconvenience in controlling the laser light to be emitted forward from the laser chip.
- In a frame type semiconductor laser device described in JP 2003-31885 A, an outer casing, which surrounds the peripheries of a laser chip and a monitoring photodetector, is provided, and a light-reflecting surface is provided on a part of the inner surface of the outer casing. The laser light emitted backward from the laser chip is reflected on the light-reflecting surface, and the greater part of the light is incident on the monitoring photodetector.
- However, in the example of JP 2003-31885 A, if a stress is applied to the outer casing while the semiconductor laser device is being mounted on an electronic device such as an optical pickup device, the light-reflecting surface may be distorted. As a result, disadvantageously, the quantity of light incident on the monitoring photodetector may not be stabilized.
- JP 2003-31885 A also discloses that the outer casing is constructed of two parts of a lower part and an upper part, and the upper outer casing is attached as a cover (cap) for protecting the laser chip to the lower outer casing by press fitting or the like.
- When attaching the upper outer casing to the lower outer casing by press fitting, the upper outer casing is brought in pressure contact with the lower outer casing by being urged in a direction roughly perpendicular to the optical axis of the laser chip. Therefore, when transmitted to the lead frame, the stress applied to the lower outer casing is transmitted in the direction roughly perpendicular to the optical axis of the laser chip. A window portion is formed at the lower outer casing so as not to interrupt the laser light from the laser chip.
- As is apparent from above, since the stress is applied to a portion including the window portion (which portion is of a small strength) of the lower outer casing, it is possible that the stress cannot be sufficiently absorbed by the lower outer casing and transmitted to the lead frame, disadvantageously causing the warp or bending of the lead frame.
- A first object of the present invention is, therefore, to provide a semiconductor laser device and an optical pickup device excellent in heat dissipation property and productivity.
- A second object of the present invention is to provide a semiconductor laser device capable of stably receiving a large quantity of laser light emitted backward from the laser chip on the monitoring photodetector and a manufacturing method therefor.
- A third object of the present invention is to provide a semiconductor laser device of which the lead frame is prevented from being warped and bent during the press fitting of a cap.
- A fourth object of the present invention is to provide a semiconductor laser device capable of preventing an adverse effect from being exerted on the write characteristic of optical disk apparatuses and a signal control system of the pickup.
- A fifth object of the present invention is to provide a semiconductor laser device capable of adjusting the optical axis of the light emitted from the laser chip that is mounted on a thin metal plate directly or via a submount, and a housing for mounting such a semiconductor laser device. A further object is to provide a semiconductor laser device in which the light-emitting point can be prevented from shifting even if the optical axis is adjusted, and a housing for mounting such a laser device.
- A semiconductor laser device according to a first aspect of the present invention includes:
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- a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion;
- a second lead extending along the lead portion of the first lead; and
- a retention portion made of an insulative material that integrally retains the first lead and the second lead,
- wherein the mounting portion of the first lead has a back surface exposed from the retention portion, and the first lead further has a tie bar portion projecting from the mounting portion along the back surface of the mounting portion.
- The “back surface of the mounting portion” of the first lead means a surface opposite from a surface on which the laser chip is mounted.
- If the mounting portion (back surface) of the first lead and the tie bar portion are brought in contact with a housing of, for example, an optical pickup device in the stage in which the semiconductor laser device is mounted on the optical pickup device, the tie bar portion functions together with the mounting portion for heat dissipation or release during the operation of the laser chip. That is, the heat generated by the laser chip is discharged to the housing through the mounting portion and the tie bar portion. Therefore, the heat discharge area is broadened, and the heat dissipation property is improved.
- In one embodiment, the tie bar portion projects in a direction perpendicular to an optical axis of the semiconductor laser chip. Therefore, the laser light emitted from the laser chip is not blocked by the tie bar portion.
- In one embodiment, the tie bar portion has an end in a projecting direction thereof, the end being located farther away from the semiconductor laser chip than any portion of the mounting portion. Therefore, the heat discharge area is broadened, and the heat dissipation property is improved.
- In one embodiment, the tie bar portion has a width equal to or greater than a width of the semiconductor laser chip.
- The “width” of the tie bar portion here means a width in the direction perpendicular to the projecting direction in which the tie bar portion projects in a plane along the back surface of the mounting portion. Moreover, the “width” of the laser chip means the width in the direction perpendicular to the optical axis of the laser light emitted from the chip.
- In this embodiment, the heat discharge area is broadened, and a satisfactory heat dissipation property is obtained.
- In one embodiment, the second lead has an anti-fall portion for restraining movement of the second lead relative to the retention portion. Therefore, if the second lead is, for example, soldered in an assembling stage in which the semiconductor laser device is mounted on an optical pickup device, and if the material of the retention portion is softened by the heat of solder, the second lead is prevented from moving with respect to the retention portion by virtue of the anti-fall portion. Therefore, soldering is stably achieved. Thus, excellence in productivity is assured.
- In one embodiment, the first lead has a recess portion at a front edge of the mounting portion, the recess portion receding so as to indicate a position in which the semiconductor laser chip is mounted, and an inner edge of the recess portion corresponding to a portion just ahead of the semiconductor laser chip is inclined with respect to an optical axis of the semiconductor laser chip.
- Note that with regard to the “front edge” of the mounting portion, the “front” is herein defined as the direction in which the laser chip emits laser light to the outside.
- In the embodiment, the first lead has the recess portion receding so as to indicate the mounting position of the laser chip at the front edge of the mounting portion. Therefore, it becomes easy to perform the positioning or alignment of the laser chip when the laser chip is mounted on the mounting portion in the manufacturing stage. For example, when the laser chip is mounted on the mounting portion via a rectangular plate-like submount member, it is proper to adjust the position of a front edge of the submount member along an edge of the recess portion. Moreover, the inner edge of the recess portion corresponding to a position lust in front of the laser chip is inclined with respect to the optical axis of the laser chip. Therefore, even if return light from an illumination object to which the laser light is applied (e.g., an information recording medium) is incident on the recess portion and the submount member during the operation of the laser chip, the return light is reflected by the inner edge of the recess portion and the front edge of the submount member in a direction different from the direction in which the laser chip emits laser light. As a result, in the device (e.g., an optical pickup device) that employs the semiconductor laser device, the return light from the illumination object can be prevented from causing noises.
- If the thickness of the first lead is partially varied, the height of each portion of the first lead can be set considering convenience of wire bonding. This contributes to good productivity.
- In one embodiment, the mounting portion of the first lead has a thickness that is smaller in a part on which the semiconductor laser chip is positioned than in remainder of the mounting portion.
- According to the embodiment, the level difference between an upper, or top surface of the laser chip and an upper surface of the remainder of the mounting portion is reduced. Therefore, this facilitates connection of the upper surface of the laser chip with the upper surface of the mounting portion with a wire by wire bonding technique. Therefore, good productivity is offered.
- In one embodiment, a thickness of the lead portion of the first lead is greater than a thickness of the mounting portion so that a difference in level between an upper surface of the semiconductor laser chip and an upper surface of the lead portion of the first lead is reduced.
- According to the embodiment, the level difference between the upper surface of the laser chip and the upper surface of the remainder of the mounting portion is reduced. Therefore, this facilitates connection of the upper surface of the laser chip with the upper surface of the mounting portion with a wire by wire bonding technique. Therefore, good productivity is offered.
- In one embodiment, the mounting portion and the lead portion of the first lead are welded together.
- In this embodiment, the first lead is fabricated without subjecting to a bending process, thus fabricated easily. Therefore, the semiconductor laser device is excellent in productivity.
- In one embodiment, the mounting portion of the first lead has a through hole in a region other than a mounting region in which the semiconductor laser chip is located, said through hole connecting a top surface and a back surface of the mounting portion. The back surface of the mounting portion has a recess, which is continuous from the through hole and surrounds a periphery of the through hole. And, the recess is filled with a material of the retention portion supplied from a top surface side of the mounting portion through the through hole.
- In the semiconductor laser devices of this embodiment, the mounting portion is held in the retention portion. This prevents the mounting portion and the retention portion from being separated from each other.
- If the space on the back side of the recess or the cut-and-raised portion is properly filled with the material of the retention portion, the back surface side of the mounting portion comes to have a flat structure. With the arrangement, the mounting portion (back surface) of the first lead and the tie bar portion can be closely attached to the housing of, for example, an optical pickup device in the stage in which the semiconductor laser device is mounted on the optical pickup device. Therefore, heat dissipation characteristic is not impaired.
- In one embodiment, each of the lead portion of the first lead and the second lead has a local thin neck at an outer lead portion projecting from the retention portion.
- In the embodiment, the lead portion of the first lead and the second lead are easily cut at their respective necks to detach their outer lead portions projecting from the retention portion. If each outer lead portion is cut at the neck, the lead will have a cut end surface which is smaller than when the lead is cut in a place other than the neck. Therefore, if each outer lead portion is provided by plating a core material with a metal of good solder wettability, a ratio of a surface of good solder wettability (plated surface) to an exposed surface (end surface) of the core material is increased. Therefore, in soldering the leads in the stage of mounting the semiconductor laser device on, for example, an optical pickup device, the semiconductor laser device displays improved solder wettability as a whole so that the productivity is improved.
- In one embodiment, each of the leads has a core material plated with a metal having good solder wettability to the core material.
- In the embodiment, if each lead is cut at the neck, a ratio of a surface of good solder wettability (plated surface) to an exposed surface (end surface) of the core material is increased. Therefore, in soldering the leads in the stage of mounting the semiconductor laser device on, for example, an optical pickup device, the semiconductor laser device displays improved solder wettability as a whole so that the productivity is improved.
- The core material may be Cu, and an outermost surface of the plating metal may be made of Sn or Au.
- The retention portion may be made of a resin. In this case, the retention portion is easily formed by the resin molding technique using a metal mold.
- The retention portion may be made of ceramics. In this case, the heat dissipation property is improved.
- In one embodiment, the retention portion has a black color. Therefore, even if return light from an illumination object, to which the laser light is applied (e.g., an information recording medium), is incident on the retention portion during the operation of the laser chip, the return light is not reflected but absorbed by the retention portion. As a result, the return light from the object is prevented from causing noises in an apparatus (e.g., optical pickup device) that employs the semiconductor laser device.
- The semiconductor laser device may have a cover for protecting the semiconductor laser chip, which is provided on the retention portion.
- An optical pickup device according to a second aspect of the present invention has a housing, and the semiconductor laser device according to the first aspect of the present invention. And, the semiconductor laser device is mounted to the housing with both the mounting portion of the first lead and the tie bar portion being in contact with the housing.
- In the optical pickup device of the present invention, the tie bar portion works for heat dissipation together with the mounting portion during the operation of the laser chip. That is, the heat generated by the laser chip is discharged to the housing through the mounting portion and the tie bar portion. Therefore, the heat discharge area is broadened, and the heat dissipation property is improved.
- An optical pickup device according to a third aspect of the present invention includes:
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- a semiconductor laser device having a metallic heat sink and a semiconductor laser chip fixed to a top surface of the heat sink; and
- a housing to support the semiconductor laser device;
- the housing having a metallic contact surface put in surface contact with a greater part of a back surface of the heat sink.
- In the present specification, the “grater part” of the back surface means 50% or more of the area of the back surface.
- According to the optical pickup device of the construction, the greater part of the back surface of the heat sink is put in surface contact with the housing, by which the heat escapes away from the greater part of the heat sink to the housing. Therefore, the quantity of heat dissipation by the heat sink is great, and the heat in the neighborhood of the laser chip also escapes to the housing. Therefore, the heat dissipation property of the semiconductor laser device can be improved. Moreover, since the heat dissipation performance of the semiconductor laser device is high, it is possible to not only prolong the operating life of the semiconductor laser device but also to operate the semiconductor laser device in a high-temperature environment. Therefore, the optical pickup device is excellent in quality and reliability.
- The back surface of the heat sink may be fixed to the contact surface of the housing with a metallic brazing material (e.g., solder).
- In one embodiment, the housing has side surfaces which are curved surfaces (e.g., cylindrical surfaces).
- In this case, if the housing with the semiconductor laser device is inserted in, for example, a cylindrical hole, the semiconductor laser device together with the housing is allowed to be rotated while being supported by the hole. Therefore, the position of the laser light emitted the laser chip can easily be adjusted.
- The heat sink may be provided with a recess portion or a through hole.
- When the back surface of the heat sink is fixed to the contact surface of the housing with solder, it becomes easy for solder to flow around by virtue of the recess portion or the through hole. Therefore, the solder can be uniformly spread between the back surface of the heat sink and the contact surface. That is, the wettability of the solder can be improved, and the adhesion of the back surface of the heat sink to the contact surface of the housing is improved.
- In one embodiment, the semiconductor laser device has a resin provided only on a top surface side of the heat sink.
- When the back surface of the heat sink is soldered to the contact surface of the housing, the soldering is not obstructed by the resin.
- The back surface of the heat sink and/or the contact surface of the housing may have been subjected to a surface treatment (e.g., metal plating) to improve wettability of the metallic brazing material.
- An optical pickup device according to a fourth aspect of the present invention includes:
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- a semiconductor laser device having a metallic heat sink and a semiconductor laser chip fixed to a top surface of the heat sink;
- a housing to support the semiconductor laser device; and
- a substrate disposed between the back surface of the heat sink and the housing,
- the substrate having a top surface put in surface contact with a greater part of a back surface of the heat sink, and
- the housing having a metallic contact surface put in surface contact with a greater part of a back surface of the substrate.
- According to the optical pickup device of the construction, the greater part of the back surface of the heat sink is brought in surface contact with the surface of the substrate, and the greater part of the back surface of the substrate is brought in surface contact with the contact surface of the housing, by which the heat escapes from the greater part of the heat sink to the housing via the substrate. Therefore, the amount of heat dissipation by the heat sink is large, and the heat in the neighborhood of the laser chip also escapes to the housing via the substrate. Therefore, the heat dissipation performance of the semiconductor laser device is improved.
- Moreover, the substrate is arranged between the back surface of the heat sink and the contact surface of the housing, and therefore, other devices can be mounted on the substrate.
- A semiconductor laser device according to a fifth aspect of the present invention includes:
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- a first lead including a plate-like mounting portion;
- a second lead which is separate from the first lead;
- a retention portion made of an insulative material that integrally retains the first lead and the second lead;
- a semiconductor laser chip that is mounted in a front part of the mounting portion and emits laser light forward and backward;
- a monitoring photodetector provided at the mounting portion such that the monitoring photodetector is disposed behind the semiconductor laser chip; and
- a light reflector which is separate from the retention portion and disposed behind the monitoring photodetector on the mounting portion, wherein the light reflector, upon receipt of at least part of laser light emitted backward from the semiconductor laser chip, reflects the light toward the monitoring photodetector.
- Note that the laser light emitted from the laser chip is used for the original purpose of the semiconductor laser device. For example, when the semiconductor laser device of the present invention is mounted on an optical pickup device, the device is used to irradiate an optical disk.
- In the semiconductor laser device of the present invention, the light reflector receives at least part of the laser light emitted backward from the laser chip and reflects the light toward the monitoring photodetector. Therefore, the quantity of light incident on the monitoring photodetector becomes greater than when no light reflector is provided. Moreover, the light reflector is separated from the retention portion, and therefore, the light reflector is not distorted even if a stress is applied to the retention portion while the semiconductor laser device is being mounted on an electronic device such as an optical pickup device. Therefore, the quantity of light incident on the monitoring photodetector is stabilized. As a result, the laser light emitted forward from the laser chip is satisfactorily controlled on the basis of the output of the monitoring photodetector.
- It is desirable that the first lead is made of a metal, and a bottom surface of the mounting portion is exposed from the lead fixation resin. In this case, heat generated by the laser chip in operation is efficiently discharged through the bottom surface of the mounting portion.
- The light reflector can be formed of, for example, a white resin, a resin plated with a metal, a metal or the like. When the white resin is used, the light reflector can easily be processed into a shape appropriate for reflection.
- The light reflector may have a reflection surface inclined with respect to a laser light emitting direction of the semiconductor laser chip so as to reflect the laser light from the semiconductor laser chip toward the monitoring photodetector.
- In one embodiment, the semiconductor laser chip is mounted on the mounting portion via a plate-like submount, and the monitoring photodetector is housed in a portion, of the submount, which is located behind the semiconductor laser chip.
- With this arrangement, parts count is reduced than when the submount and the monitoring photodetector are provided separately from each other.
- In one embodiment, in fabricating the semiconductor laser device of the fifth aspect, at least the monitoring photodetector and the light reflector are concurrently bonded onto the mounting portion. The semiconductor laser device is simply fabricated.
- A semiconductor laser device according to a sixth aspect of the present invention includes:
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- a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion;
- a second lead extending along the lead portion of the first lead; and
- a retention portion made of an insulative material that integrally retains the first lead and the second lead, wherein the retention portion includes a frame member disposed on a semiconductor laser chip side of the first lead, and the frame member has a window portion for emitting laser light from the semiconductor laser chip;
- a cap to be fit in the frame member of the retention portion; and
- a pressure contact structure that urges the frame member of the retention portion against the cap, and vice versa, in a direction roughly parallel to an optical axis of the semiconductor laser chip so as to bring the frame member and the cap in pressure contact with each other when the cap is fit in the frame member of the retention portion.
- According to the semiconductor laser device of the present invention, the cap can be attached to the inside of the retention portion by press fitting. At this time, a stress applied to the frame member of the retention portion is transmitted in the direction roughly parallel to the optical axis of the laser chip when transmitted to the mounting portion of the first lead. That is, the stress is absorbed by portions (portions of great strength) except for the window portion of the frame member of the retention portion, and therefore, the stress is restrained from being transmitted to the mounting portion of the first lead. Therefore, even if the cap is press fit to the frame member of the retention portion, the first lead (lead frame) is prevented from warping or bending.
- In one embodiment, the cap has a projection engaged with the window portion of the frame member of the retention portion.
- According to the semiconductor laser device, engaging the projection of the cap with the window portion of the frame member of the retention portion allows the laser chip to be reliably protected.
- In one embodiment, the cap has one or more projections that project in a direction roughly parallel to the optical axis of the semiconductor laser chip, the frame member of the retention portion has one or more recess portions receding in the direction roughly parallel to the optical axis of the semiconductor laser chip, and the pressure contact structure has the one or more projections and said one or more recess portions, and the or each projection is engaged with a corresponding recess portion while being brought in pressure contact therewith when the cap is attached to the frame member of the retention portion.
- According to the embodiment, even with a simple structure, the cap can reliably be aligned with the frame member of the retention portion while being press fit in the retention portion.
- In one embodiment, the or each projection has a hemispherical shape, and the or each recess portion has a shape complementary to the projection. Due to the shapes of the projection(s) and the recess(es), the stress can be evenly transmitted in a wide area so that an intense stress locally applied is avoided.
- In one embodiment, the cap has two opposite outer surfaces which extend in a direction roughly perpendicular to the optical axis of the semiconductor laser chip. Also, the frame member of the retention portion has two opposite inner surfaces which extend in the direction roughly perpendicular to the optical axis of the semiconductor laser chip. The projections are provided at the two outer surfaces of the cap, two to outer surface, and the recess portions are provided at the two inner surfaces of the frame member of the retention portion, two to inner surface.
- According to the embodiment, stress generated in pressing the cap into the frame member of the retention portion is evenly transmitted.
- The cap may have a handling lug. In the case, the cap can easily be handled with tweezers or the like.
- In one embodiment, the first lead has tie bar portions that project in opposite directions roughly perpendicular to the optical axis of the semiconductor laser chip from respective opposite end edges of the mounting portion that are situated in the directions roughly perpendicular to the optical axis of the semiconductor laser chip. Also, the lug of the cap is formed so as to be oriented in a direction roughly parallel to the optical axis of the semiconductor laser chip when the cap is fit in the frame member of the retention portion.
- According to the present embodiment, the lug of the cap is formed so as to be oriented in a direction roughly perpendicular to the tie bar portions. Therefore, in manufacturing the semiconductor laser devices, at the step of pressing the cap into the frame member of the retention portion, the lug is directed roughly perpendicular to tie bars through which a plurality of mounting portions are connected together into a linear state. Therefore, workability can be improved when the press fitting of the cap is carried out in the state in which the plurality of mounting portions are connected together by the tie bars. In concrete, when the cap is manually handled and placed from the direction perpendicular to the tie bars with tweezers or the like during conveyance of the semiconductor laser device in the direction parallel to the tie bars, the lug is directed in the direction roughly perpendicular to the operator, so that the operator can press the cap in place with his or her arms fit to the sides of his or her body, which allows easy working and requires a reduced working space.
- The lug may be defined between two lug-forming recess portions that are opposed to each other at an interval on one surface of the cap.
- In this case, since the lug of the cap is formed without raising the upper surface of the cap, the thickness of the cap is prevented from being increased. Thus, the thickness of the semiconductor laser device is prevented from being increased.
- If the lug-forming recess portions each have a crescentic shape, it becomes easy to insert the tips of tweezers into the lug-forming recess portions when the lug is handled, and good workability is obtained.
- The retention portion and the cap may be made of an identical material. Then, the material cost can be reduced.
- If the retention portion and the cap is made of a resin, the retention portion and the cap can easily be formed by resin molding technique using metal molds.
- In one embodiment, the retention portion and the cap have a black color.
- According to the present embodiment, even if return light from an illumination object to which the laser light is applied (e.g., an information recording medium such as a disk) is incident on the retention portion and the cap during the operation of the laser chip, the return light is not reflected but absorbed by the black retention portion and the cap. As a result, noises caused by the return light from the illumination object are prevented from being generated in an apparatus (e.g., an optical pickup device) that employs the semiconductor laser device.
- A semiconductor laser device according to a seventh embodiment of the present invention includes a metal support having a mounting surface and a front surface adjoining the mounting surface, and a semiconductor laser chip mounted on the mounting surface, and which emits laser light from a light-emitting end surface located on the front surface side of the semiconductor laser chip. And, at least part of the front surface is inclined with respect to the light-emitting end surface and parallel to a plane obtained by rotating the light-emitting end surface around a perpendicular line to the mounting surface.
- When the thus constructed semiconductor laser device is employed as a light source of an optical disk apparatus, even if a sub-beam returning from a loaded optical disk impinges upon the front surface of the metal support, the sub-beam is prevented from going back to the optical disk because at least part of the front surface of the metal support is inclined with respect to the light-emitting end surface of the laser chip. Therefore, the semiconductor laser device can be prevented from exerting an adverse effect on the write characteristic of the optical disk apparatus and the signal control system of a pickup.
- Moreover, the at least part of the front surface of the metal support is parallel to the plane obtained by rotating the light-emitting end surface of the laser chip around the perpendicular line, or normal, to the mounting surface of the metal support. Therefore, the at least part of the front surface of the metal support can be used as a reference surface for positioning the laser chip. That is, using the at least part of the front surface of the metal support as a reference surface facilitates alignment of the laser chip.
- There may be provided a submount made of a dielectric substance or a semiconductor between the semiconductor laser chip and the metal support. In this case, efficiency of discharging heat of the laser chip can be improved.
- In one embodiment, an end surface located on the front surface side of the submount is inclined with respect to the light-emitting end surface and parallel to a plane obtained by rotating the light-emitting end surface around the perpendicular line to the mounting surface.
- According to the semiconductor laser device of the embodiment, even if a sub-beam returning from the optical disk impinges on the end surface of the submount, the sub-beam can be prevented from being returned to the optical disk. Therefore, even if the submount is located between the laser chip and the metal support, the semiconductor laser device can be prevented from exerting an adverse effect on the write characteristic of the optical disk apparatus and the signal control system of the pickup.
- Moreover, the end surface of the submount can be used as the reference surface for positioning the laser chip. Therefore, even if the submount is located between the laser chip and the metal support, the laser chip can easily be aligned by using the end surface of the submount.
- The metal support may be a frame made of a metal thin plate. In this case, the manufacturing cost can be reduced.
- Also, an end surface located on the front surface side of the submount may be roughly parallel to the at least part of the front surface. In this case, the at least part of the front surface of the metal support can be used as a reference surface for positioning the submount. Therefore, using the at least part of the front surface of the metal support will facilitate placement of the submount in a prescribed position.
- A semiconductor laser device according to an eighth embodiment includes:
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- a main body;
- a semiconductor laser chip fixed to the main body; and
- a first rotation guide mechanism that is provided at the main body and allows the main body to be rotatably supported so that a laser light emitting direction of the semiconductor laser chip is adjustable.
- In the semiconductor laser device of the construction, provision of the first rotation guide mechanism at the main body allows the main body to be rotated while being supported, so that the laser light emitting direction of the laser chip is adjusted. Therefore, when the semiconductor laser device is mounted on, for example, a housing, the optical axis of the outgoing beam of the laser chip can be adjusted.
- In one embodiment, the first rotation guide mechanism enables the main body to rotate around a neighborhood of a light-emitting point of the semiconductor laser chip.
- In one embodiment, the main body is made of a metal plate.
- In one embodiment, the first rotation guide mechanism has a curved portion provided at an edge of the main body.
- In one embodiment, the first rotation guide mechanism comprises a recess portion provided at the main body (e.g., a cut provided at the edge of the main body).
- An inner wall surface of the recess portion may be a conical surface.
- In one embodiment, the first rotation guide mechanism has a groove provided at the resin member in such a manner that the groove roughly coincides with a circumference of a circle centered on the semiconductor laser chip.
- In one embodiment, the main body has a metal plate and a resin member integrated with the metal plate, and the first rotation guide mechanism comprises a groove provided at the resin member in such a manner that the groove roughly coincides with a circumference of a circle centered on the semiconductor laser chip.
- A housing according to a ninth aspect of the present invention includes:
-
- a housing main body; and
- a second rotation guide mechanism that is provided at the housing main body and rotatably supports a semiconductor laser device so that a laser light emitting direction of the semiconductor laser device is adjustable.
- According to the housing of the construction, provision of the second rotation guide mechanism at the housing main body allows the laser light emitting direction of the semiconductor laser device to be adjusted by rotating the semiconductor laser device while supporting the same. Therefore, when mounting the semiconductor laser device on the housing, adjustment of the optical axis of the outgoing beam of the laser chip can be performed.
- In one embodiment, the second rotation guide mechanism enables the semiconductor laser device to rotate around a neighborhood of the light-emitting point of the semiconductor laser device.
- In one embodiment, the second rotation mechanism includes a guide portion provided at the housing main body and having a curved surface.
- In one embodiment, the second rotation mechanism includes at least one projection. The projection may have a conical shape or a circular arc shape.
- The semiconductor laser device according to the eighth aspect of the present invention and the housing according to the ninth aspect of the present invention may be combined together and incorporated in an optical pickup device.
- In the optical pickup device, the optical axis of the laser chip can be adjusted around the light-emitting point so that the outgoing beam of the laser chip becomes parallel to the optical axis of an optical system of the pickup device.
- The present invention will become more fully understood from the detailed description given hereinbelow and the accompanying drawings which are given by way of illustration only, and thus are not intended to limit the present invention, and wherein:
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FIG. 1 is a perspective view showing a semiconductor laser device of a first embodiment of the present invention; -
FIG. 2A is a view of the semiconductor laser device as viewed from above;FIG. 2B is a view of the semiconductor laser device as viewed from the right-hand side; andFIG. 2C is a view of the semiconductor laser device as viewed from below; -
FIGS. 3A and 3B are process charts showing manufacturing process steps of the semiconductor laser device; -
FIG. 4A is a view showing a portion corresponding to one semiconductor laser device of a frame;FIG. 4B is a sectional view taken along line A-A′ inFIG. 4A ;FIG. 4C is a sectional view taken along line B-B′ inFIG. 4A ;FIG. 4D is a view corresponding toFIG. 4C of a modification example in which a recess is provided on the back surface of a mounting portion; andFIG. 4E is a view corresponding toFIG. 4A of a modification example in which an odd-shaped frame is employed; -
FIG. 5 is a view showing the schematic construction of an optical pickup device of a second embodiment of the present invention; -
FIG. 6 is a view showing a modification example in which the inner edge of a recess portion of a first lead indicating a laser chip position is inclined; -
FIG. 7 is a view showing a modification example in which a lead portion is made thicker than a mounting portion in the first lead; -
FIG. 8 is a view showing a modification example in which a neck is provided at an outer lead portion; -
FIG. 9 is a view showing a shape of the outer lead portion after being cut at the neck portion; -
FIG. 10A is a schematic view of a semiconductor laser device and a housing in an optical pickup device of a third embodiment of the present invention as viewed from above;FIG. 10B is a schematic view of the semiconductor laser device as viewed from below;FIG. 10C is a schematic view of the semiconductor laser device and the housing as viewed from a side; andFIG. 10D is a schematic view of the semiconductor laser device and the housing as viewed from behind; -
FIG. 11 is a schematic view of a semiconductor laser device and a housing in an optical pickup device of a fourth embodiment of the present invention as viewed obliquely from behind; -
FIG. 12 is a schematic view of a semiconductor laser device and a housing in an optical pickup device of a fifth embodiment of the present invention as viewed from behind; -
FIG. 13 is a perspective view showing the schematic construction of a semiconductor laser device of a sixth embodiment of the present invention; -
FIGS. 14A, 14B and 14C are a front view, a side view and a bottom view, respectively, of a semiconductor laser device of the present invention; -
FIG. 15 is a sectional view of the semiconductor laser device; -
FIG. 16 is a view showing a resin-molded frame used for fabricating the semiconductor laser device; -
FIG. 17 is a view showing a semiconductor laser device of a seventh embodiment that has a submount provided with a built-in photodetector; -
FIG. 18 is a view showing a modification example in which a light reflector is provided with an inclined surface in the semiconductor laser device ofFIG. 17 ; -
FIG. 19 is a view showing another modification example of the semiconductor laser device ofFIG. 17 ; -
FIG. 20 is a front view showing a semiconductor laser device of an eighth embodiment of the present invention in a state before a cap is press fit; -
FIG. 21 is a front view showing the semiconductor laser device of the present invention in a state in which the cap has been press fit; -
FIG. 22 is a side view showing the semiconductor laser device of the present invention in the state in which the cap has been press fit; -
FIG. 23 is a front view showing a state of the semiconductor laser devices of the present invention in a manufacturing process in which the lead frames are connected together after the caps are press fit; -
FIG. 24A is a schematic perspective view of a semiconductor laser device of a ninth embodiment of the present invention; andFIG. 24B is a schematic view of a metal support of the semiconductor laser device as viewed from the mounting surface side; -
FIG. 25A is a schematic perspective view of a semiconductor laser device of a tenth embodiment of the present invention; andFIG. 25B is a schematic view of a metal support of the semiconductor laser device as viewed from the mounting surface side; -
FIG. 26 is a schematic perspective view of a semiconductor laser device of an eleventh embodiment of the present invention; -
FIG. 27A is a schematic perspective view of a semiconductor laser device of a twelfth embodiment of the present invention; andFIG. 27B is a schematic view of a metal support of the semiconductor laser device as viewed from the mounting surface side; -
FIG. 28 is a schematic view of the top side (upper surface side) of a semiconductor laser device and a housing of a thirteenth embodiment of the present invention; -
FIG. 29 is a schematic view of the top side (upper surface side) of a semiconductor laser device and a housing of a fourteenth embodiment of the present invention; -
FIG. 30 is a schematic view for explaining a modification example of the semiconductor laser device and the housing of the fourteenth embodiment; -
FIG. 31 is a schematic view for explaining a modification example of the semiconductor laser device of the fourteenth embodiment; -
FIG. 32 is a schematic view of the back side (lower surface side) of a semiconductor laser device of a fifteenth embodiment of the present invention; -
FIG. 33 is a schematic view of the top side (upper surface side) of the housing of the fifteenth embodiment of the present invention; -
FIG. 34 is a schematic view for explaining a modification example of the semiconductor laser device of the fifteenth embodiment; and -
FIG. 35 is a schematic view for explaining a modification example of the housing of the fifteenth embodiment. - Embodiments of the present invention will be described in detail below with reference to the drawings.
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FIG. 1 shows a perspective view of a frame typesemiconductor laser device 40 of one embodiment of the present invention.FIG. 2A shows thesemiconductor laser device 40 as viewed from above.FIG. 2B shows the device ofFIG. 2A as viewed from the right-hand side.FIG. 2C shows the device ofFIG. 2A as viewed from below. It is noted that the vertical and transverse directions of thesemiconductor laser device 40 of the embodiment are specified just for the sake of convenience of explanation. - As shown in
FIGS. 1 and 2 A, the frame typesemiconductor laser device 40 includes afirst lead 1 that has a mountingportion 1 a on which alaser chip 5 is to be mounted, a plurality of second leads 21, 22 and 23 for signal input and output, and aresin portion 3 that serves as a retention portion for integrally retaining the first lead and the second leads 21, 22 and 23. - In concrete, the
first lead 1 has a roughly rectangular plate-like mountingportion 1 a, anelongated lead portion 1 b extending from the mountingportion 1 a, and tiebar portions portion 1 a along aback surface 1 c of the mountingportion 1 a. A semiconductor laser chip (“laser chip”) 5 is mounted on the mountingportion 1 a via a rectangular plate-like submount member 4. Thelaser chip 5 has a rectangular parallelepiped external shape elongated in the direction of the optical axis and emits laser light forward (upward inFIG. 2A ). As shown inFIG. 2C , theback surface 1 c of the mountingportion 1 a is exposed from theresin portion 3. - The
tie bar portions laser chip 5, i.e., in the transverse direction inFIGS. 2A and 2C . The ends of thetie bar portions laser chip 5 than any arbitrary portion of the mountingportion 1 a. Thetie bar portions - Moreover, the
first lead 1 has arecess portion 7 at thefront edge 1 e of the mountingportion 1 a to indicate the mounting position of thelaser chip 5. With this arrangement, it becomes easy to perform positioning of the submountmember 4 and thelaser chip 5 when placing thesubmount member 4 and thelaser chip 5 on the mountingportion 1 a in the manufacturing stage. For example, it is proper to adjust the position of the front edge of the submountmember 4 along the edge of therecess portion 7. - The second leads 21, 22 and 23 are elongated along the
lead portion 1 b of thefirst lead 1. As shown inFIG. 1 , the inner ends 21 a, 22 a and 23 a of the second leads 21, 22 and 23 are exposed inside of theresin portion 3 formed in a frame-like shape. Wires constructed of Au (not shown) are provided from thelaser chip 5 and thesubmount member 4 to the inner ends 21 a, 22 a and 23 a of the second leads 21, 22 and 23. - The
resin portion 3 is made of a black insulative resin material of, for example, epoxy resin in this example. Therefore, theresin portion 3 is easily formed by resin molding using a metal mold. - As described above, in the
semiconductor laser device 40, theback surface 1 c of the mountingportion 1 a of thefirst lead 1 is exposed from theresin portion 3, and thetie bar portions portion 1 a along theback surface 1 c of the mountingportion 1 a. Moreover, the areas of thetie bar portions back surface 1 c of) the mountingportion 1 a of thefirst lead 1 and thetie bar portions tie bar portions portion 1 a during the operation of thelaser chip 5. That is, heat generated by thelaser chip 5 is radiated through the mountingportion 1 a and thetie bar portions -
FIGS. 3A and 3B schematically show processes for manufacturing thesemiconductor laser device 40. - i) First, a plate material made of Cu is punched to obtain a
frame 90 that has a pattern as shown inFIG. 3A (punching process). At this time, the punching is carried out from theback surface 1 c side of the mounting portion. As a result, burrs are generated on the mountingsurface 1 a side by the punching. Therefore, when mounting thesemiconductor laser device 40 on a device such as an optical pickup, theback surface 1 c can be fit close to the mounting surface of the device. Therefore, the heat dissipation property is improved. At theframe 90, a plurality of sets of thefirst lead 1 and the second leads 21, 22 and 23 are arranged in two lines alongbars 91 and 92 extended in the transverse, or lateral direction inFIG. 3A . Thebars 91 and 92 are connected together via connection bars 93. The mountingportions 1 a of adjoining first leads 1 are connected together via tie bars 6. - ii) Next, the punched
frame 90 is partially bent (bending process). The bending style will be described later. - iii) Next, as shown in
FIG. 3B , theresin portions 3 are provided on thebent frame 90 by resin molding using a metal mold (resin molding process). - iv) Next, the
laser chip 5 is mounted on the mountingportion 1 a of thefirst lead 1 via the associated submount member 4 (die bonding process). - v) Next, Au wires are placed from the
laser chip 5 and thesubmount member 4 to the inner ends 21 a, 22 a and 23 a of the second leads 21, 22 and 23 (wire bonding process). - It is desirable to provide a cover for protecting the
laser chip 5 on theresin portion 3 in this stage. - vi) Next, individual
semiconductor laser devices 40 are obtained by cutting thelead portions 1 b of the first leads 1 and the second leads 21, 22 and 23 in the neighborhood of thebars 91 and 92, and also cutting the tie bars 6 (tie bar cutting process). In this stage, parts (outer lead portions) of thelead portion 1 b of thefirst lead 1 and the second leads 21, 22 and 23 are left projected from theresin portion 3 of each individualsemiconductor laser device 40. Moreover,parts tie bars 6 are left projected from theresin portion 3 of each individualsemiconductor laser device 40. - vii) The outer lead portions projecting from the
resin portion 3 out of thelead portion 1 b of thefirst lead 1 and the second leads 21, 22 and 23 are provided with metal plating such that the outer lead portions have an outermost surface made of Ag (silver) or Au (gold) (plating process). With this arrangement, improved solder wettability is obtainable in soldering the outer lead portions after completion of the laser device. When the outermost surface is Ag, a brazing material that does not contain Pb of a high melting point can be used in place of brazing materials containing Pb, which is harmful to the environment. The metal at the outermost surface is not limited to this but allowed to be Sn, Ni, Zn or the like capable of improving the solder wettability. - The
semiconductor laser device 40 is easily manufactured by the described method. -
FIG. 4A shows a portion as viewed from above, corresponding to one semiconductor laser device of theframe 90 after the ii) bending process.FIG. 4B shows a sectional view taken along the line A-A′ inFIG. 4A , andFIG. 4C is a sectional view taken along the line B-B′ inFIG. 4A . - As clearly illustrated in
FIGS. 4A and 4B , ananti-fall portion 1 f bent in the bending process is provided at thelead portion 1 b of thefirst lead 1, and similarly,anti-fall portions anti-fall portions lead portion 1 b of thefirst lead 1 when viewed in the direction shown inFIG. 4B . Therefore, even if the material of theresin portion 3 is softened by the heat of solder applied to the second leads 21, 22 and 23 in the mounting stage in which the semiconductor laser device is mounted on, for example, an optical pickup device, the second leads 21, 22 and 23 are prevented from moving or shifting with respect to theresin portion 3 by virtue of theanti-fall portions - In particular, the anti-fall portion if of the
first lead 1 and theanti-fall portion 22 f of thesecond lead 22 are processed wider than the other portions. The effect of suppressing the movement of thefirst lead 1 and thesecond lead 22 with respect to theresin portion 3 is thus improved. - Moreover, as clearly shown in
FIGS. 4A and 4C , cut-and-raisedportions portions 1 a of thefirst lead 1 on which thelaser chip 5 is mounted, or the regions corresponding to both sides of thelaser chip 5 in this example so as to form throughholes 30 that penetrate the thickness of the mountingportion 1 a. After the iii) resin molding process, a space on the back side of the cut-and-raised portions is filled with the material of theresin portion 3 applied thereto from the front surface side of the mountingportion 1 a through the through hole 30 (seeFIG. 2C ). Therefore, the mountingportion 1 a (more accurately the cut-and-raisedportions 37 and 38) is(are) held in theresin portion 3. This arrangement increases the bonding strength between the mountingportion 1 a and theresin portion 3, so that the mountingportion 1 a and theresin portion 3 are prevented from separating from each other. - Moreover,
projections FIG. 4A ) from the mountingportion 1 a. Theresin portion 3 covers theprojections portion 1 a and theresin portion 3 from separating. - If the space on the back surface of the cut-and-raised
portions resin portion 3 in proper quantities, theback surface 1 c side of the mountingportion 1 a comes to have a flat structure. With the arrangement, the mountingportion 1 a of the first lead 1 (backsurface 1 c) and thetie bar portions semiconductor laser device 40 is mounted on the optical pickup device. Therefore, the heat dissipation characteristic is prevented from being impaired. - The bottom surface, or back surface side of the
semiconductor laser device 40 can be similarly formed into a flat structure also by, instead of bending, employing two frames of a frame for forming the laserchip mounting portion 1 a and a frame for forming thelead 1 b and joining the laserchip mounting portion 1 a to thelead 1 b by welding. -
FIG. 4D shows an example in which in place of the cut-and-raisedportions portion 1 a is provided with throughholes 32 that penetrate the thickness of the mountingportion 1 a and theback surface 1 c of the mountingportion 1 a is provided withrecesses 31 that continue from the respective throughholes 32 so as to surround the periphery of the respective throughholes 32. Also, in this case as well, therecesses 31 are filled with the material of theresin portion 3 that is applied thereto from the front surface side of the mountingportion 1 a through the throughholes 32 after the iii) resin molding process. With this arrangement, the mountingportion 1 a is held in theresin portion 3. This arrangement increases the bonding strength between the mountingportion 1 a and theresin portion 3, so that the mountingportion 1 a and theresin portion 3 are prevented from separating from each other. - If the
recesses 31 are filled with the material of theresin portion 3 in proper quantities, theback surface 1 c side of the mountingportion 1 a comes to have a flat structure. With the arrangement, the mountingportion 1 a of the first lead 1 (backsurface 1 c) and thetie bar portions semiconductor laser device 40 is mounted on the optical pickup device. Therefore, the heat dissipation characteristic is prevented from being impaired. -
FIG. 4E shows an example in which a variant frame of a partially varied thickness is employed as theframe 90. In this example, in comparison with the thickness of aportion 1 d of the mountingportion 1 a of thefirst lead 1 on which thelaser chip 5 is mounted, the remainingportion 1 a′ of the mountingportion 1 a has a greater thickness. With this arrangement, a height difference between the upper surface of the mountedlaser chip 5 and the upper surface of the remainingportion 1 a′ is reduced. Therefore, it becomes possible to easily connect the upper surface of thelaser chip 5 to the upper surface of the remainingportion 1 a′ by wire bonding for, for example, ground (GND) wiring. That is, the trouble of wire jump and so on due to the difference in height can be eliminated. This arrangement, therefore, provides excellent productivity. - Moreover, it is acceptable to make the thickness of the lead portion (denoted by 1 b′) of the
first lead 1 greater than the thickness of the mountingportion 1 a as in an example shown inFIG. 7 . With this arrangement, a height difference between the upper surface of thelaser chip 5 as mounted and the upper surface of thelead portion 1 b′ of thefirst lead 1 is reduced. Therefore, it becomes possible to easily connect the upper surface of thelaser chip 5 to the upper surface of thelead portion 1 b′ of thefirst lead 1 by wire bonding for, for example, ground (GND) wiring. That is, the trouble of wire flip and so on due to the difference in height can be eliminated. The arrangement, therefore, provides excellent productivity. In this case, it is acceptable to employ two frames of a frame for forming the laserchip mounting portion 1 a and a frame for forming thelead 1 b′ and join the laserchip mounting portion 1 a to thelead 1 b′ by welding. By this operation, thefirst lead 1 is easily produced. The arrangement, therefore, provides excellent in productivity. -
FIG. 5 schematically shows the construction of an optical pickup device (generally indicated by numeral 50) that employs thesemiconductor laser device 40. Theoptical pickup device 50 has anoptical system 8 that includes abeam splitter 10, and aphotodetector 11, besides thesemiconductor laser device 40. These components are attached to a housing (not shown).Reference numeral 9 denotes an optical disk as an information recording medium which is an object to which the laser light is applied. - A laser light L1 emitted from the
laser chip 5 passes through theoptical system 8, reaches thedisk 9, and is reflected on thedisk 9. The reflected laser light L2 returns to theoptical system 8, and the laser light L2 is split by thebeam splitter 10 and a part of the laser light is made incident on thephotodetector 11. Information contained in thedisk 9 is read by thephotodetector 11. Thetie bar portions semiconductor laser device 40 project in the opposite directions perpendicular to the optical axis of thelaser chip 5, and therefore, the laser light L1 emitted from thelaser chip 5 is not interrupted by thetie bar portions - On the other hand, part of the reflected laser light L2, which has passed through the
beam splitter 10 as it is, becomes a return light L3 and is made incident on thesemiconductor laser device 40. As described above, thelaser chip 5 is mounted via thesubmount member 4 on the mountingportion 1 a on which thelaser chip 5 is mounted. Therefore, it is possible that the return light L3 is reflected on the inner edges of the submountmember 4 and therecess portion 7 back to theoptical system 8, and then to thephotodetector 11 via thebeam splitter 10, and becomes a noise. - Accordingly, in the example shown in
FIG. 6 , theinner edge 7 a of therecess portion 7 corresponding to a portion just in front of thelaser chip 5 at the mountingportion 1 a is inclined by about five degrees with respect to the optical axis of thelaser chip 5, and thefront edge 4 a of the submountmember 4 is positioned along theinner edge 7 a of therecess portion 7. The optical axis of thelaser chip 5 is directed straight forward (upward inFIG. 6 ). With this arrangement, even if the return light L3 from theoptical disk 9 is made incident on thesubmount member 4 and therecess portion 7 during the operation of thelaser chip 5, the return light L3 is reflected by thefront edge 4 a of the submountmember 4 and theinner edge 7 a of therecess portion 7 in a direction different from that of the laser light L1 emitted from thelaser chip 5. As a result, the return light L3 from theoptical disk 9 can be prevented from causing noises in theoptical pickup device 50. - Moreover, since the color of the
resin portion 3 is black, if the return light L3 from theoptical disk 9 is incident on theresin portion 3, the return light L3 is not reflected but absorbed by theresin portion 3. Therefore, the return light L3 from theoptical disk 9 can be prevented from causing noises. - In a mounting stage in which the
semiconductor laser device 40 is mounted on theoptical pickup device 50, the outer lead portions of thelead portion 1 b of thefirst lead 1 and the second leads 21, 22 and 23 that project from theresin portion 3 are often cut so as to have lengths appropriate for mounting. When the core material Cu of the leads is exposed at the end surface of each lead, solder wettability is impaired. Accordingly, it is preferable to locally providenarrow necks FIG. 8 . With this arrangement, the outer lead portions can easily be cut at thenecks FIG. 9 , thecut end surface 21 e becomes smaller in size than when cut at a portion other than the neck. Therefore, the area of the surface of the plating of Sn or Au having good solder wettability becomes broad relative to the area of the exposed surface (end surface) 21 e of the core material Cu. Therefore, good solder wettability is obtained when each outer lead portion is soldered in the stage of mounting thesemiconductor laser device 40 on theoptical pickup device 50, so that good productivity is obtained. - Although the material of the retention portion is an insulative resin in the present embodiment, the material may be ceramic. If the material of the retention portion is ceramic, the heat dissipation property can be further improved.
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FIG. 10A shows a schematic view of an optical pickup device of a third embodiment of the present invention, as viewed from above, in a state that asemiconductor laser device 101 is fixed to ahousing 102.FIG. 10B shows a schematic view of only thesemiconductor laser device 101 as viewed from below.FIG. 10C shows a schematic view of the state as viewed from a lateral side.FIG. 10D shows a schematic view of the state as viewed from behind. - As shown in
FIG. 10A , the optical pickup device has a frame typesemiconductor laser device 101 and ametal housing 102 that supports thesemiconductor laser device 101. - The
semiconductor laser device 101 has ametal heat sink 103 and alaser chip 105 that is fixed to a front surface of theheat sink 103 via asubmount 104 and emits laser light toward an optical disk. As shown inFIG. 10B , acut 110 is provided as one example of the recess portion at each of opposite side surfaces of theheat sink 103. Moreover, theheat sink 103 is integrated withresin 106 and leads 107. Theresin 106 is provided only on the front surface side of theheat sink 103. That is, theresin 106 does not project beyond the back surface of theheat sink 103. - As shown in
FIG. 10D , thehousing 102 has ametallic contact surface 111 with which the greater part of the back surface of theheat sink 103 is put in contact. Moreover, as shown inFIGS. 10A and 10C , thehousing 102 has ahollow portion 108 in which thesemiconductor laser device 101 is partially inserted. As shown inFIG. 10D , thehollow portion 108 has, at its wall surfaces,grooves 109 in which side portions of theheat sink 103 are fit. Part of wall surfaces defining thegroove 109 and part of the wall surfaces defining thehollow portion 108 constitute acontact surface 111. Although not shown, solder as one example of the metallic brazing material is disposed between the back surface of theheat sink 103 and an opposed wall surface of thehollow portion 108 and between the side surfaces of theheat sink 103 and respective opposed wall surfaces of thegroove 109. That is, theheat sink 103 is fixed to the wall surfaces of thehollow portion 108 and of thegrooves 109 with solder. - According to the optical pickup device of the construction, heat escapes from the greater part of the
heat sink 103 to thehousing 102 by virtue of the surface contact of the greater part of the back surface of theheat sink 103 with thecontact surface 111 of thehousing 102, and therefore, the quantity of heat discharge by theheat sink 103 is great. Moreover, since the back surface of theheat sink 103 in the neighborhood of thelaser chip 105 is also put in surface contact with thecontact surface 111 of thehousing 102, heat in the neighborhood of thelaser chip 105 escapes to thehousing 102. Thus, thesemiconductor laser device 101 has an improved heat dissipation property. - Moreover, since the
resin 106 is provided only on the front surface side of theheat sink 103, it is easy to solder the back surface of theheat sink 103 to thecontact surface 111 of thehousing 102. - Moreover, since the
cut portions 110 are provided at the sides of theheat sink 103, solder easily flows around, and the solder uniformly spreads between the back surface of theheat sink 103 and thecontact surface 111. That is, the solder wettability is improved. - Although the greater part of the back surface of the
heat sink 103 is put in surface contact with thecontact surface 111 of thehousing 102 in the third embodiment, it is acceptable to put roughly the entirety of the back surface of theheat sink 103 in surface contact with thecontact surface 111 of thehousing 102. - Moreover, although the
cut portions 110 are provided at the side portions of theheat sink 103, it is acceptable to provide a through hole at theheat sink 103. The solder wettability is improved also when the through hole is provided at theheat sink 103. - Moreover, it is acceptable to subject the back surface of the
heat sink 103 and/or thecontact surface 111 of thehousing 102 to a surface treatment for improving the wettability of the metallic brazing material. For example, as one example of the surface treatment, Ag (silver) plating may be applied to the back surface of theheat sink 103 and/or thecontact surface 111 of thehousing 102. -
FIG. 11 shows a schematic view of an optical pickup device of a fourth embodiment of the present invention, as viewed obliquely from behind, in a state that thesemiconductor laser device 101 is fixed to ahousing 122. InFIG. 11 , the same constituents as those of the third embodiments shown inFIGS. 10A-10D are denoted by the same reference numerals as those of the constituents ofFIGS. 10A-10D , and no description is provided therefor. Moreover, inFIG. 11 , portions of theleads 107 are not shown, andsolder 112, which is not shown inFIGS. 10A-10D , is shown. - The optical pickup device of the present embodiment differs from the third embodiment only in that the device of the present embodiment has a
housing 122 whose side surfaces are curved surfaces. Because the side surfaces of thehousing 122 are curved, inserting thehousing 122 mounted with thesemiconductor laser device 101 into, for example, a cylindrical hole would allow thesemiconductor laser device 101 and thehousing 122 to be rotated, with thesemiconductor laser device 101 and thehousing 122 supported by the hole during the rotation. Therefore, the position of emission of laser light from thelaser chip 105 can easily be adjusted. - Moreover, it is needless to say that the
housing 122 has a metallic contact surface with which the greater part of the back surface of theheat sink 103 is put in surface contact. Therefore, the optical pickup device of the present embodiment produces an effect similar to that of the optical pickup device of the third embodiment. - In the fourth embodiment, it is acceptable to put roughly the entire back surface of the
heat sink 103 in surface contact with the metallic contact surface of thehousing 122. - Moreover, it is acceptable to subject the back surface of the
heat sink 103 and/or the contact surface of thehousing 122 to surface treatment for improving the wettability of the metallic brazing material. For example, as one example of the surface treatment, Ag (silver) plating may be applied to the back surface of theheat sink 103 and/or the contact surface of thehousing 122. -
FIG. 12 shows a schematic view of an optical pickup device of a fifth embodiment of the present invention, as viewed from behind, in a state that thesemiconductor laser device 101 is fixed to ahousing 132. InFIG. 12 , the same constituents as those of the third embodiments shown inFIGS. 10A-10D are denoted by the same reference numerals as those of the constituents ofFIGS. 10A-10D , and no description is provided therefor. Moreover, inFIG. 12 ,solder 112, which is not shown inFIGS. 10A-10D , is shown. - The optical pickup device of the fifth embodiment has a
metal housing 132 provided with ahollow portion 138 andgrooves 139. Part of wall surfaces of thegrooves 139 and part of a wall surface of thehollow portion 138 constitute ametallic contact surface 141. Asemiconductor substrate 113 as one example of the substrate is arranged between thecontact surface 141 and the back surface of theheat sink 103. The greater part of the back surface of theheat sink 103 is put in surface contact with a front surface of thesemiconductor substrate 113. Moreover, the greater part of the back surface of thesemiconductor substrate 113 is put in surface contact with thecontact surface 141 of thehousing 132. Although not shown, a pattern is provided on the surface of thesemiconductor substrate 113 for allowing thesemiconductor laser device 101 to be mounted thereto withsolder 112. - According to the optical pickup device of the construction, the greater part of the back surface of the
heat sink 103 is put in surface contact with the front surface of thesemiconductor substrate 113, and the greater part of the back surface of thesemiconductor substrate 113 is put in surface contact with thecontact surface 141 of thehousing 132. With this arrangement, heat escapes from the greater part of theheat sink 103 to thehousing 132 via thesemiconductor substrate 113, and therefore, the quantity of heat discharge by theheat sink 103 is great. Also, heat in the neighborhood of the laser chip 105 (seeFIG. 10A ) escapes to thehousing 132 via thesemiconductor substrate 113. Therefore, thesemiconductor laser device 101 has an improved heat dissipation property. - Moreover, since the
semiconductor substrate 113 is arranged between the back surface of theheat sink 103 and thecontact surface 141 of thehousing 132, another semiconductor device can be mounted on thesemiconductor substrate 113. For example, a semiconductor laser chip that emits laser light of a wavelength different from that of thelaser chip 105 may be mounted on thesemiconductor substrate 113. - In the fifth embodiment, the greater part of the back surface of the
heat sink 103 is put in surface contact with the front surface of thesemiconductor substrate 113, and the greater part of the back surface of thesemiconductor substrate 113 is put in surface contact with thecontact surface 141 of thehousing 132. However, it is acceptable to put roughly the entire back surface of theheat sink 103 in surface contact with the surface of thesemiconductor substrate 113 and put roughly the entire back surface of thesemiconductor substrate 113 in surface contact with thecontact surface 141 of thehousing 132. - Moreover, it is acceptable to subject the back surface of the
heat sink 103 to a surface treatment for improving the wettability of the metallic brazing material. For example, as one example of the surface treatment, Ag (silver) plating may be applied to the back surface of theheat sink 103. - Moreover, the pickup device of the present invention may be provided by appropriately combining the third through fifth embodiments with one another.
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FIG. 13 shows a perspective view of a frame typesemiconductor laser device 240 of one embodiment of the present invention.FIG. 14A shows thesemiconductor laser device 240 as viewed from above.FIG. 14B shows the device ofFIG. 14A as viewed from the right-hand side.FIG. 14C shows the device ofFIG. 14A as viewed from below. It is noted that the vertical and transverse directions of thesemiconductor laser device 240 of the embodiment are specified just for the sake of convenience of explanation. - As shown in
FIGS. 13 and 14 A, the frame typesemiconductor laser device 240 includes afirst lead 201 that has a mountingportion 201 a on which alaser chip 205 is to be mounted, a plurality ofsecond leads resin portion 203 that serves as a retention portion for integrally retaining the first lead and the second leads 221, 222 and 223. - In concrete, the
first lead 201 has a roughly rectangular plate-like mountingportion 201 a, anelongated lead portion 201 b extending from the mountingportion 201 a, and tiebar portions portion 201 a along aback surface 201 c of the mountingportion 201 a. A semiconductor laser chip (“laser chip”) 205 is mounted on the mountingportion 201 a via a rectangular plate-like submount member 204. Thelaser chip 205 has a rectangular parallelepiped external shape elongated in the direction of the optical axis and emits laser light forward (upward inFIG. 14A ). Thesubmount member 204 is constructed of a metal in this example. - A
monitoring photodetector 215 separate from thesubmount member 204 is placed on the mountingportion 201 a in a position behind thelaser chip 205. Further, alight reflector 216 separate from themonitoring photodetector 215 and theresin portion 203 is placed on the mountingportion 201 a in a position behind themonitoring photodetector 215. - The
monitoring photodetector 215 is constructed of a roughly rectangular parallelepiped photodiode chip formed by diffusing impurities in a Si substrate in this example. - The
light reflector 216 is constructed of a white resin formed in a roughly rectangular parallelepiped shape in this example. Thelight reflector 216 is easily formed by resin molding using a metal mold. Thelight reflector 216 has a reflection surface perpendicular to the laser light emitting direction (vertical direction inFIG. 14A ) of thelaser chip 205 and operates to receive part of the laser light emitted backward from thelaser chip 205 and reflect the same toward themonitoring photodetector 215. - The
resin portion 203 is made of a black insulative resin material of, for example, epoxy resin in this example. Therefore, theresin portion 203 is easily formed by the resin molding technique using a metal mold. - As shown in
FIG. 14C , theback surface 201 c of the mountingportion 201 a is exposed from theresin portion 203. Moreover, the second leads 221, 222 and 223 are elongated along thelead portion 201 b of thefirst lead 201. As shown inFIG. 13 , inner ends 221 a, 222 a and 223 a of the second leads 221, 222 and 223 are exposed inside of theresin portion 203 formed into a frame-like shape. Then, Au wires (not shown) are provided from thelaser chip 205 and themonitoring photodetector 215 to the inner ends 221 a, 222 a and 223 a of the second leads 221, 222 and 223. - As shown in
FIGS. 13 and 14 A, thefirst lead 201 has arecess portion 207 at thefront edge 201 e of the mountingportion 201 a to indicate the mounting position of thelaser chip 205. With this arrangement, it becomes easy to perform positioning of the submountmember 204 and thelaser chip 205 when placing thesubmount member 204 and thelaser chip 205 on the mountingportion 201 a in the manufacturing stage. For example, it is proper to adjust the position of the front edge of the submountmember 204 along the edge of therecess portion 207. - Referring to
FIG. 15 , laser light L1 emitted forward (upward inFIG. 15 ) from thelaser chip 205 is used for the intended purpose of thesemiconductor laser device 240. For example, when thesemiconductor laser device 240 is incorporated into an optical pickup device (not shown), the laser light is used to illuminate an optical disk. - Part of the laser light L2 emitted backward from the
laser chip 205 is directly incident on themonitoring photodetector 215. However, the greater part of the laser light L2 emitted backward from thelaser chip 205 is incident on thelight reflector 216. Thelight reflector 216 reflects the incident laser light toward themonitoring photodetector 215. Therefore, the quantity of light incident on themonitoring photodetector 215 becomes greater than when thelight reflector 216 is not provided. Particularly, in this example, thelight reflector 216 is white, and therefore, the received light is reflected, and scarcely absorbed. Therefore, the quantity of light incident on themonitoring photodetector 215 is further increased. Moreover, thelight reflector 216 is separated from theresin portion 203, and therefore, thelight reflector 216 is not distorted even if a stress is applied to theresin portion 203 when, for example, thesemiconductor laser device 240 is mounted on the optical pickup device. Therefore, the quantity of light incident on themonitoring photodetector 215 is stabilized. As a result, the laser light L1 emitted forward from thelaser chip 205 is satisfactorily controlled on the basis of the output of themonitoring photodetector 215. - Even if the resin itself constituting the
light reflector 216 has a color (e.g., black) other than white, the quantity of light incident on themonitoring photodetector 215 can be increased and stabilized similarly to the above case when the surface is subjected to metal plating of silver or the like. Moreover, even if thelight reflector 216 is made of a metal, a similar effect can be produced. - As described above, in the
semiconductor laser device 240, theback surface 201 c of the mountingportion 201 a of thefirst lead 201 is exposed from theresin portion 203. Therefore, if the mountingportion 201 a of thefirst lead 201 is brought in contact with the housing of, for example, an optical pickup device in a stage in which the semiconductor laser device is mounted on the optical pickup device, the mountingportion 201 a works for heat dissipation during the operation of thelaser chip 205. That is, heat generated by thelaser chip 205 is released to the housing through the mountingportion 201 a. - The
semiconductor laser device 240 is fabricated in the following manner. - First, as shown in
FIG. 16 , aframe 290 made of Cu is prepared. At theframe 290, a plurality of sets of thefirst lead 201 and the second leads 221, 222 and 223 for constituting thesemiconductor laser device 240 are arranged in two lines alongbars FIG. 16 . Thebars portions 201 a of adjoining first leads 201 are joined together via tie bars 206. Then, theresin portions 203 are formed for each set of thefirst lead 201 and the second leads 221, 222 and 223 by resin molding technique using a metal mold. - In this state, the
laser chip 205 is mounted on the mountingportion 201 a of the first leads 201 via thesubmount member 204, and themonitoring photodetector 215 and thelight reflector 216 are also mounted (die bonding process). Thesubmount members 204, themonitoring photodetectors 215 and thelight reflectors 216 should desirably be concurrently bonded onto the mountingportion 201 a for the sake of process simplification. - Next, Au wires are placed from the
laser chip 205 and themonitoring photodetector 215 to the inner ends 221 a, 222 a and 223 a of the second leads 221, 222 and 223 (wire bonding process). - It is preferable to provide a cover for protecting the
laser chip 205 on theresin portion 203 in this stage. - Next, individual
semiconductor laser devices 240 are obtained by cutting thelead portions 201 b of the first leads 201 and the second leads 221, 222 and 223 in the neighborhood of thebars - The
semiconductor laser device 240 is simply fabricated through the described process steps. - Although the material of the retention portion is an insulative resin in the above example, the material may be ceramic. If the material of the retention portion is ceramic, the heat dissipation property can be further improved.
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FIG. 17 shows asemiconductor laser device 250 of the seventh embodiment obtained by modifying thesemiconductor laser device 240. The same constituent parts as those ofFIG. 13 are denoted by the same reference numerals, and no description is provided for such constituent parts. - The
semiconductor laser device 250 differs from thesemiconductor laser device 240 in that themonitoring photodetector 218 is combined with a plate-like submount 219 made of Si, instead of being provided as a single component. In detail, thelaser chip 205 is mounted at a forward portion of thesubmount 219, and themonitoring photodetector 218 is formed on thesubmount 219 in a position behind thelaser chip 205. Thephotodetector 218 is formed by diffusing impurities at the surface of a Si substrate by a well-known technique. - Even in the
semiconductor laser device 250, the quantity of light incident on themonitoring photodetector 218 is increased by virtue of thelight reflector 216. Moreover, because thelight reflector 216 is separated from theresin portion 203, thelight reflector 216 is not distorted even if a stress is applied to theresin portion 203 when, for example, mounting the semiconductor laser device on the optical pickup device. Thus, the quantity of light incident on themonitoring photodetector 218 is stabilized. As a result, the laser light L1 emitted forward from thelaser chip 205 is satisfactorily controlled on the basis of the output of themonitoring photodetector 218. Moreover, the parts count can be reduced in comparison with the case where the submount and the monitoring photodetector are provided separately from each other. -
FIG. 18 shows yet anothersemiconductor laser device 260 obtained by modifying thesemiconductor laser device 250 ofFIG. 17 . - The
semiconductor laser device 260 differs from thesemiconductor laser device 250 ofFIG. 17 in that thelight reflector 216 of thelaser device 260 has areflection surface 217 inclined with respect to the laser light emitting direction (vertical direction inFIG. 18 ) of thelaser chip 205 so that the laser light L2 emitted from thelaser chip 205 is reflected toward themonitoring photodetector 218. By virtue of thereflection surface 217, the quantity of light incident on themonitoring photodetector 218 can be increased. Moreover, the quantity of light incident on themonitoring photodetector 218 can be adjusted according to the angle of inclination. -
FIG. 19 shows a modification example 270 in which a silver paste 20 is used as an adhesive for bonding thelight reflector 216 to the mountingportion 201 a of thefirst lead 201 in thesemiconductor laser device 260 ofFIG. 18 . In the modification example 270, a plate-like Si submount 219, which has the built-inmonitoring photodetector 218 and on which thelaser chip 205 is mounted, and thelight reflector 216 are bonded to the mountingportion 201 a via a layer ofsilver paste 220. - According to the construction, it becomes possible to concurrently bond the
submount 219 and thelight reflector 216 to the mountingportion 201 a. In detail, thesilver paste 220 is applied by a specified amount to the mountingportion 201 a of thefirst lead 201 by means of a dispenser or the like in the die bonding process, and the submount 219 and thelight reflector 216 are placed on thesilver paste 220. Subsequently, they are heated in an oven or the like and concurrently hardened. Through the processes, thesemiconductor laser device 270 can be fabricated easier than when thesubmount 219 and thelight reflector 216 are separately mounted on the mountingportion 201 a. -
FIG. 20 shows a front view of a semiconductor laser device of one embodiment of the present invention. More specifically,FIG. 20 shows a front view of the semiconductor laser device of the present invention in a state before a cap is pressed into place.FIG. 21 shows a front view of the semiconductor laser device of the present invention in a state in which the cap is press fit, andFIG. 22 shows a side view of the semiconductor laser device of the present invention in a state in which the cap is press fit. It is noted that the hatching in the figure intends not to illustrate the cross section of parts but to highlight the parts for the sake of easier recognition. - The semiconductor laser device is a so-called frame type semiconductor laser device and includes a
first lead 301 that has a mounting portion 301 a on which thelaser chip 305 is mounted, a plurality ofsecond leads 302 for signal input and output, aretention portion 303 that integrally retains thefirst lead 301 and the second leads 302, and acap 309 that is attached to theretention portion 303 and protects thelaser chip 305. - In concrete, the
first lead 301 has a roughly rectangular plate-like mounting portion 301 a, an elongated lead portion 301 b extending from the mounting portion 301 a, and tiebar portions 306 a and 306 b that project in the transverse, or lateral direction from the right-hand and left-hand edges of the mounting portion 301 a along the back surface 301 c of the mounting portion 301 a. Thelaser chip 305 is mounted on the mounting portion 301 a via a rectangular plate-like submount member 304. Thelaser chip 305 has a rectangular parallelepiped external shape elongated in the direction of the optical axis and emits laser light forward (upward inFIG. 20 ). - Herein, the transverse, or lateral direction means a direction perpendicular or roughly perpendicular to the optical axis of the
laser chip 305, and corresponds to the lateral direction inFIG. 20 . Moreover, the front-rear (back) direction means a direction of the optical axis of the laser chip, and corresponds to the vertical direction inFIG. 20 . - The back surface 301 c (the surface opposite from the surface on which the
laser chip 305 is mounted) of the mounting portion 301 a is exposed from theretention portion 303. Thetie bar portions 306 a and 306 b each have in the projecting direction an end located in a position farther away from thelaser chip 305 than any arbitrary portion of the mounting portion 301 a. The width (width in the direction perpendicular to the projecting direction) of thetie bar portions 306 a and 306 b is greater than the width of the laser chip 305 (width in the direction perpendicular to the optical axis of the laser light emitted from the laser chip 305). - As described above, the back surface 301 c of the mounting portion 301 a of the
first lead 301 is exposed from theretention portion 303, and thetie bar portions 306 a and 306 b project from the mounting portion 301 a along the back surface 301 c of the mounting portion 301 a. Moreover, the areas of thetie bar portions 306 a and 306 b more than a certain extent are secured. Therefore, if the back surface 301 c of the mounting portion 301 a of thefirst lead 301 and thetie bar portions 306 a and 306 b are brought in contact with the housing of the optical pickup device in a stage in which the semiconductor laser device is mounted on, for example, an optical pickup device, thetie bar portions 306 a and 306 b work for heat discharge together with the mounting portion 301 a during the operation of the laser chip. That is, heat generated by thelaser chip 305 is released to the housing through the mounting portion 301 a and thetie bar portions 306 a and 306 b. That is, the heat discharge area is broadened, and the heat dissipation property is improved. - A
positioning recess portion 308 that recedes so as to indicate the mounting position of thelaser chip 305 is provided at the front edge 301 e of the mounting portion 301 a. With this arrangement, it becomes easy to perform positioning of the submountmember 304 and thelaser chip 305 when mounting thesubmount member 304 and thelaser chip 305 on the mounting portion 301 a in the manufacturing stage. For example, it is proper to align the front edge of the submountmember 304 along the edge of thepositioning recess portion 308. - The plurality of
second leads 302 are elongated along the lead portion 301 b of thefirst lead 301. The inner ends of the second leads 302 are exposed inside of theretention portion 303 formed in a frame-like shape. Au wires (not shown) are provided from thelaser chip 305 or thesubmount member 304 to the inner ends of the second leads 302. - The
retention portion 303 is made of a black insulative resin material, for example, epoxy resin in this example. Therefore, theretention portion 303 is easily formed by the resin molding technique using a metal mold. - The
retention portion 303 has aframe member 331 on thelaser chip 305 side of the mounting portion 301 a, and theframe member 331 is formed with awindow portion 332 for emission of laser light so that the laser light emitted from thelaser chip 305 is not blocked. - In concrete, the
frame member 331 has a roughly rectangular shape having front and rear parts and right-hand and left-hand parts. Then, thewindow portion 332 is formed partway at the front part 331 a, and thesubmount member 304 and thelaser chip 305 are arranged in thewindow portion 332. - The
frame member 331 has two inner surfaces that are extended in a direction roughly perpendicular to the optical axis of thelaser chip 305 and face each other, and each of the two inner surfaces has tworecess portions 307 that recede in the direction roughly parallel to the optical axis of thelaser chip 305. That is, the tworecess portions 307 are arranged on the inner side of each of the front and rear parts of theframe member 331. The shape of therecess portions 307 is a shape corresponding to the outer periphery of a hemisphere. - In this example, the
cap 309 is made of the same material as that of theretention portion 303, namely the black insulative resin material of, for example, epoxy resin. Therefore, thecap 309 is easily formed by the resin molding process using a metal mold. - The
cap 309 has a roughly rectangular main body 313 to be attached to the inside of theframe member 331. Thecap 309 also has aprojection 314 that projects from the front edge of the main body 313 and is mated with thewindow portion 332 of theframe member 331. Thus, thelaser chip 305 is reliably protected by thecap 309. - The
cap 309 has two outer surfaces that are extended in a direction roughly perpendicular to the optical axis of thelaser chip 305 and face each other, and twoprojections 310 projecting in the direction roughly parallel to the optical axis of thelaser chip 305 are provided on each of the two outer surfaces. That is, the twoprojections 310 are arranged at each of the front and rear edges of the main body 313. The shape of theprojections 310 is hemispheric. That is, the shape of therecess portions 307 is complementary to the shape of theprojections 310. - As shown in
FIG. 21 , when thecap 309 is attached to theframe member 331 of theretention portion 303, theprojections 310 and therecess portions 307 are engaged with each other and brought in pressure contact with each other, so that theframe member 331 of theretention portion 303 and thecap 309 are urged in opposite directions roughly parallel to the optical axis of thelaser chip 305 and brought in pressure contact with each other. That is, a pressure contact means 320 is constituted essentially of theprojections 310 and therecess portions 307. - The
cap 309 has alug 311 for handling. Thelug 311 is formed so as to be directed in the direction roughly parallel to the optical axis of thelaser chip 305 when thecap 309 is attached to the inside of theframe member 331 of theretention portion 303. - In concrete, the
lug 311 is defined between two lug-formingrecess portions cap 309. The lug-formingrecess portions recess portions - According to the semiconductor laser device of the construction, when the
cap 309 is fit into theframe member 331 of theretention portion 303, theframe member 331 of theretention portion 303 and thecap 309 are brought in pressure contact with each other by being urged in the direction roughly parallel to the optical axis of thelaser chip 305 by the pressure contact means 320. Therefore, thecap 309 can be fit in theframe member 331 of theretention portion 303 by press fitting. At this time, a stress applied to theframe member 331 of theretention portion 303 is transmitted in the direction roughly parallel to the optical axis of thelaser chip 305 when transmitted to the mounting portion 301 a of thefirst lead 301. That is, the stress is absorbed by the portions except for thewindow portion 332 in theframe member 331 of the retention portion 303 (i.e., the portions are the right-hand and left-hand parts of theframe member 331 that have a great strength), and therefore, the stress is restrained from being transmitted to the mounting portion 301 a of thefirst lead 301. Therefore, it is possible to prevent the first lead 301 (lead frame) from warping or bending even if thecap 309 is press fit to theframe member 331 of theretention portion 303. - Moreover, because the pressure contact means 320 has the
projections 310 and therecess portions 307, which provides a simple structure, thecap 309 can reliably be positioned in place by being press fit to theframe member 331 of theretention portion 303. - Moreover, the shape of the
projections 310 is hemispherical, and the shape of therecess portions 307 is complementary to the shape of theprojections 310. Therefore, the stress can be evenly transmitted in a wide area, and an intense stress can be prevented from being locally applied. - Moreover, the two (four in total)
projections 310 are arranged on each of the two outer surfaces of thecap 309, and the two (four in total)recess portions 307 are arranged on each of the two inner surfaces of theframe member 331 of theretention portion 303. Therefore, the stress can be evenly transmitted when thecap 309 is press fit to theframe member 331 of theretention portion 303. - Moreover, the
cap 309 has thelug 311 for handling, and therefore, thecap 309 can easily be handled with tweezers or the like. - Moreover, the
lug 311 is formed by providing the two lug-formingrecess portions lug 311 is formed by not forming a projection on the upper surface of thecap 309, and the thickness of thecap 309 is not increased, so that the thickness of the semiconductor laser device can be prevented from being increased. - Since the
recess portions 312 for lug formation have a crescentic shape, it is easy to insert the ends of tweezers into therecess portions lug 311 is handled, and good workability is obtained. - Moreover, the
lug 311 of thecap 309 is formed so as to be directed in the direction roughly perpendicular to the right-hand and left-handtie bar portions 306 a and 306 b when thecap 309 is fit into theframe member 331 of theretention portion 303. Therefore, as shown inFIG. 23 , when thecap 309 is press fit to theretention portion 303 in manufacturing the semiconductor laser device, thelug 311 is directed in the direction roughly perpendicular to tiebars 306, which tie the adjoining first leads 301 and 301 (mounting portions 301 a and 301 a) together and make the plurality offirst leads 301 extend in a liner form. Therefore, good workability is obtained in performing the press fitting of thecap 309 in the state in which the plurality of first leads 301 (lead frames) are joined together by the tie bars 306. - In concrete, when manually handling the
cap 309 in the direction perpendicular to the tie bars 306 (from below the semiconductor laser device inFIG. 23 ) for press fitting while feeding the semiconductor laser devices in the direction parallel to the tie bars 306, thelug 311 is directed in the direction roughly perpendicular to the operator, so that the operator can press fit thecap 309 with his or her arms fit to the sides of his or her body. Therefore, the work is easy to perform, and the work space can be reduced. - Moreover, since the color of the
retention portion 303 and thecap 309 is black, even if the return light from the object to which the laser light is applied (e.g., an information recording medium such as a disk) is incident on theretention portion 303 and/or thecap 309 during the operation of thelaser chip 305, the return light is not reflected but absorbed by theretention portion 303 and/or thecap 309. As a result, the return light from the object to which the laser light is applied can be prevented from causing noises in the device (e.g., an optical pickup device) that employs the semiconductor laser device. That is, the laser light returning from the object of illumination with the laser light is prevented from irregularly reflecting, and the laser oscillation is prevented from becoming unstable. It is thus possible to prevent the proper signal from being disordered at the photodetector, which would be caused by entrance of light other than the proper signal into the photodetector for signal detection of the pickup. - It is noted that the present invention is not limited to the above embodiment. For example, although not shown, it is acceptable to provide a projection projecting in the direction roughly parallel to the optical axis of the laser chip at the frame member of the retention portion and provide a recess portion receding in the direction roughly parallel to the optical axis of the laser chip at the cap.
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FIG. 24A schematically shows a perspective view of a semiconductor laser device of a ninth embodiment of the present invention. - The semiconductor laser device has a
stem 405 made of a metal. Thestem 405 has a disk-shaped base (eyelet) 401 and ametal support 403 provided on a top surface (stem reference surface) of thebase 401. - The
base 401 is provided withnotches 401 a at an interval of approximately 180° in the circumferential direction of the base. Moreover, threeleads base 401. Of the three leads, twoleads base 401 and theother lead 402C does not penetrate thebase 401. The leads 402A and 402B are integrally fixed to the base 401 with a resin or glass that has an insulative property. With this arrangement, theleads base 401. On the other hand, the lead 402C is fixed to the back surface (the surface opposite from the stem reference surface) of thebase 401 and electrically connected to thebase 401. Themetal support 403 is provided on the surface (stem reference surface) side of thebase 401. - The
metal support 403 has a mountingsurface 403 a and afront surface 403 b adjoining the mountingsurface 403 a. The mountingsurface 403 a is roughly perpendicular to thefront surface 403 b. Moreover, alaser chip 404 is mounted on the mountingsurface 403 a, and laser light is emitted from a light-emittingend surface 404 a on thefront surface 403 b side of thelaser chip 404. Thelaser chip 404 is electrically connected to the lead 402B via an Au wire (not shown). -
FIG. 24B schematically shows themetal support 403 as viewed from the mountingsurface 403 a side. - The
front surface 403 b of themetal support 403 is inclined with respect to the light-emittingend surface 404 a of thelaser chip 404. That is, the perpendicular line to thefront surface 403 b of themetal support 403 is inclined with respect to the laser light emitting direction of thelaser chip 404. Moreover, thefront surface 403 b of themetal support 403 is parallel to a plane obtained by rotating the light-emittingend surface 404 a of thelaser chip 404 around the perpendicular line to the mountingsurface 403 a (line perpendicular to the sheet ofFIGS. 24A and 24B ). - When the semiconductor laser device of the above construction is employed as the light source of an optical disk apparatus, a laser beam emitted from the light-emitting
end surface 404 a of thelaser chip 404 is split into one main beam and two sub-beams by a diffraction grating. The three beams are condensed on a surface of a loaded optical disk through an optical system including a collimating lens, an object lens and so on, to write information on the optical disk or read the signal contained in the optical disk. Then, the beams are reflected by the optical disk and returns to the semiconductor laser device. At this time, even if a sub-beam returning from the optical disk impinges on thefront surface 403 b of themetal support 403, the sub-beam reflected by thefront surface 403 b of themetal support 403 is not incident again on the surface of the optical disk since thefront surface 403 b of themetal support 403 is inclined with respect to the light-emittingend surface 404 a of thelaser chip 404. Therefore, the semiconductor laser device is prevented from exerting an adverse effect on the write characteristic of the optical disk apparatus and the signal control system of the pickup. - Moreover, because the
front surface 403 b of themetal support 403 is parallel to the plane obtained by rotating the light-emittingend surface 404 a of thelaser chip 404 around the perpendicular line to the mounting surface of themetal support 403, thefront surface 403 b of themetal support 403 can be used as a reference surface for positioning thelaser chip 404. Therefore, using thefront surface 403 b of themetal support 403 as the reference surface facilitates the placement of thelaser chip 404 in a prescribed position. -
FIG. 25A schematically shows a perspective view of a semiconductor laser device of a tenth embodiment of the present invention, andFIG. 25B schematically shows themetal support 403 as viewed from the mountingsurface 403 a side. InFIGS. 25A and 25B , same constituent parts as those of the ninth embodiment shown inFIGS. 24A and 24B are denoted by the same reference numerals as those of the constituent parts ofFIGS. 24A and 24B , and no description is provided therefor. - As shown in
FIG. 25A , the semiconductor laser device has asubmount 406 made of a dielectric substance or a semiconductor provided between themetal support 403 and thelaser chip 404. As shown inFIG. 25B , anend surface 406 a on thefront surface 403 b side of thesubmount 406 is inclined with respect to the light-emittingend surface 404 a of thelaser chip 404 and also inclined with respect to thefront surface 403 b of themetal support 403. That is, the perpendicular line to theend surface 406 a of thesubmount 406 and the perpendicular line to thefront surface 403 b of themetal support 403 are inclined with respect to the laser light emitting direction of thelaser chip 404. Moreover, theend surface 406 a of thesubmount 406 is parallel to a plane obtained by rotating the light-emittingend surface 404 a of thelaser chip 404 around the perpendicular line to the mountingsurface 403 a (line perpendicular to the sheet ofFIGS. 25A and 25B ). - In the case where the semiconductor laser device of the above construction is employed as a light source of an optical disk apparatus, since the
end surface 406 a of thesubmount 406 and thefront surface 403 b of themetal support 403 are inclined with respect to the light-emittingend surface 404 a of thelaser chip 404, even if a sub-beam returning from the optical disk impinges on theend surface 406 a of thesubmount 406 or thefront surface 403 b of themetal support 403, the sub-beam is prevented from being redirected to the optical disk. Therefore, the semiconductor laser device is prevented from exerting an adverse effect on the write characteristic of the optical disk apparatus and the signal control system of the pickup. That is, the semiconductor laser device of the present embodiment produces an effect similar to that of the ninth embodiment. -
FIG. 26 shows a perspective view of a semiconductor laser device of an eleventh embodiment of the present invention. The semiconductor laser device is called a frame laser. - The semiconductor laser device has a metal
thin plate 413 that serves as a frame, asubmount 416 provided on the metalthin plate 413, and alaser chip 414 provided on thesubmount 416. Laser light is emitted from a light-emittingend surface 414 a of thelaser chip 414. Moreover, leads 412A, 412B, 412C and 412D are connected to the metalthin plate 413 via an insulative resin. - The metal
thin plate 413 has a mountingsurface 413 a and afront surface 413 b adjoining the mountingsurface 413 a. The mountingsurface 413 a is roughly perpendicular to thefront surface 413 b. Moreover, thefront surface 413 b of the metalthin plate 413 a has anotch 417, which is located in the neighborhood of thelaser chip 414. End surfaces defining thenotch 417 are inclined with respect to the light-emittingend surface 414 a of thelaser chip 414. However, those end surfaces are parallel to a plane obtained by rotating the light-emittingend surface 414 a of thelaser chip 414 around a perpendicular line to the mountingsurface 413 a. - An
end surface 416 a of thesubmount 416 on thenotch 417 side is roughly parallel to the light-emittingend surface 414 a of thelaser chip 414. Moreover, theend surface 416 a of thesubmount 416 is inclined with respect to the end surfaces defining thenotch 417. - When the semiconductor laser device of the above construction is employed as a light source of an optical disk apparatus, since the
notch 417 is provided at thefront surface 413 b of the metalthin plate 413, even if a sub-beam returning from a loaded optical disk impinges on theend surface 416 a of thesubmount 416 and thefront surface 413 b of the metalthin plate 413, the sub-beam can be prevented from being redirected to the optical disk. Therefore, the semiconductor laser device can be prevented from exerting an adverse effect on the write characteristic of the optical disk apparatus and the signal control system of the pickup. - The laser light emitted from the light-emitting
end surface 414 a of thelaser chip 414 spreads in an elliptical cone shape. However, the laser light and the metalthin plate 413 are prevented from interfering with each other by virtue of thenotch 417 provided at thefront surface 413 b of the metalthin plate 413. - Although the
end surface 416 a of thesubmount 416 is inclined with respect to the end surfaces defining thenotch 417 in the above embodiment, it is acceptable to place thesubmount 416 such that theend surface 416 a of thesubmount 416 is parallel to one of the end surfaces of thenotch 417. -
FIG. 27A schematically shows a perspective view of a semiconductor laser device of a twelfth embodiment of the present invention, andFIG. 27B schematically shows themetal support 403 as viewed from the mountingsurface 403 a side. InFIGS. 27A and 27B , same constituent parts as those of the tenth embodiment shown inFIGS. 25A and 25B are denoted by the same reference numerals as those of the constituent parts ofFIGS. 25A and 25B . - The semiconductor laser device of the present embodiment differs from the tenth embodiment only in the direction in which the
end surface 406 a of thesubmount 406 is directed. That is, in the semiconductor laser device of the present embodiment, as shown inFIGS. 27A and 27B , theend surface 406 a of thesubmount 406 is roughly parallel to thefront surface 403 b of themetal support 403. - The semiconductor laser device of the present embodiment produces an effect similar to that of the tenth embodiment. In addition, the semiconductor laser device of the present embodiment is configured such that the
end surface 406 a of thesubmount 406 is roughly parallel to thefront surface 403 b of themetal support 403. This allows thefront surface 403 b of themetal support 403 to be used as a mark for positioning thesubmount 406 when thesubmount 406 is placed on themetal support 403. Therefore, it becomes easy to position thesubmount 406. - Several embodiments of the present invention have been described above, and the present invention is not limited to the embodiments. Moreover, the ninth through twelfth embodiments may be properly combined with one another.
-
FIG. 28 shows a schematic view showing asemiconductor laser device 501 and ahousing 502 of a thirteenth embodiment of the present invention, as viewed from the front surface side, the housing being a laser mounting portion included in a chassis of an optical pickup device. In this case, the chassis of the optical pickup device is provided with a collimating lens that transforms the light emitted from the laser chip (not shown) into approximate parallel light, an optical axis changing mirror, an object lens drive unit, and so on besides the semiconductor laser device, so that the chassis integrally retains the optical system of the optical pickup device. - The
semiconductor laser device 501 has athin metal plate 503 obtained by plating, for example, an iron plate or a copper plate of a thickness of about 0.3 mm with tin (Sn), gold (Au) or the like, and alaser chip 504 fixed to the surface of thethin metal plate 503 via asubmount 505. Aresin frame member 508 of a thickness of 3 mm integrated with theelectrode lead 507 is provided on the surface of thethin metal plate 503. That is, thethin metal plate 503 is integrated with theresin frame 508 and theelectrode lead 507. Moreover, the inner peripheral surfaces of theresin frame member 508 face both side surfaces and the back surface (surface opposite from the light-emittingend surface 504 a) of thelaser chip 504. Thelaser chip 504 has a cathode (upper surface) electrically connected to alead 507 via a thin metal wire (e.g., Au wire of a diameter of 25 μm) (not shown). Moreover, thelaser chip 504 has an anode electrically connected to an electrode on thesubmount 505 via a thin metal wire (not shown), and the electrode on the submount is electrically connected to the thin metal plate 503 (connected to one of the leads 507) via a thin metal wire (not shown). Moreover,curved portions 503 a located beside thelaser chip 504 and acut 503 b located ahead of thelaser chip 504 are formed at the edge portion of thethin metal plate 503. Thelaser chip 504 is one example of the semiconductor laser chip. Moreover, thethin metal plate 503 and theresin frame 508 constitute one example of the main body. - The
housing 502 includes a rectangular plate-like housingmain body 506 and guideportions 509 which are provided on the housingmain body 506 and which each have acontact surface 509 a as one example of the curved surface. The curvature of thecontact surface 509 a is made approximately equal to the curvature of the associatedcurved portion 503 a of thethin metal plate 503. Moreover, a surface of the housingmain body 506 put in contact with thethin metal plate 503 is lower than a top surface of theguide portion 509. It is not always necessary to make the curvature of onecurved portion 503 a equal to the curvature of the othercurved portion 503 a. However, the center of curvature of eachcurved portion 503 a should desirably be made approximately equal to the light-emitting point (the center of the front end surface (light-emittingend surface 504 a)) of thelaser chip 504. If the radius of curvature of onecurved portion 503 a is not equal to the radius of curvature of the othercurved portion 503 a, thelaser chip 504 will be shifted toward thecurved portion 503 a of the smaller radius of curvature when viewed from above. Moreover, the number of light-emitting points of thelaser chip 504 is not limited to one, and the number oflaser chips 504 to be loaded is not limited to one. When a plurality of light-emitting points exist, the center of curvature of thecurved portion 503 a may be set at any one of the light-emitting point that serves as the center of adjustment. Alternatively, the light-emitting point that serves as the center may be changed according to the curvature of thecurved portion 503 a. - When the
semiconductor laser device 501 is mounted on thehousing 502, thecurved portion 503 a of thesemiconductor laser device 501 is brought in contact with thecontact surface 509 a of thehousing 502, and thesemiconductor laser device 501 is slid with respect to thehousing 502. By this operation, thethin metal plate 503 rotates while being supported by thecontact surface 509 a, and therefore, the optical axis of the outgoing beam of thelaser chip 504 can easily be adjusted. Moreover, by setting the center of curvature of thecurved portions 503 a at the light-emitting point of thelaser chip 504, the optical axis is prevented from being translated within a plane of the sheet of the drawing when the optical axis of the outgoing beam of thelaser chip 504 is adjusted. -
FIG. 29 shows a schematic view showing asemiconductor laser device 521 and ahousing 522 according to a fourteenth embodiment of the present invention as viewed from the front surface side. InFIG. 29 , same constituent parts as those of the thirteenth embodiment shown inFIG. 28 are denoted by the same reference numerals as the constituent parts ofFIG. 28 . - The
semiconductor laser device 521 has athin metal plate 523 and alaser chip 504 fixed to a surface of thethin metal plate 523 via asubmount 505. Aresin frame 508 integrated with electrode leads 507 is provided on the surface of thethin metal plate 523. That is, thethin metal plate 523 is integrated with theresin frame 508 and the electrode leads 507. Moreover, the inner peripheral surfaces of theresin frame member 508 face both side surfaces and the back surface (surface opposite from the light-emittingend surface 504 a) of thelaser chip 504. Moreover, acut 523 b is formed at an edge of thethin metal plate 523 such that thecut 523 b is located ahead of thelaser chip 504. That is, thecut 523 b is located in the neighborhood of the light-emitting point of thelaser chip 504. Moreover, the inner wall surface of thecut 523 b is a cylindrical surface. Thelaser chip 504 is one example of the semiconductor laser chip. Moreover, thethin metal plate 523 and theresin frame 508 constitute one example of the main body of the laser device. - The
housing 522 includes a rectangular plate-like housingmain body 526 and acolumnar projection 529 that is provided on a surface of the housingmain body 526 and is engageable with thecut 523 b. - When the
semiconductor laser device 521 is mounted on thehousing 522, thesemiconductor laser device 521 is moved in the direction of arrow in the figure to engage theprojection 529 of thehousing 522 with thecut 523 b of thesemiconductor laser device 521, and thesemiconductor laser device 521 is slid with respect to thehousing 522. By this operation, thethin metal plate 523 rotates around theprojection 529 in the neighborhood of the light-emitting point of thelaser chip 504 while being supported by theprojection 529, whereby the optical axis of the outgoing beam of thelaser chip 504 can be adjusted. - Since the
cut 523 b is provided at the edge of thethin metal plate 503, theprojection 529 can easily be engaged with thecut 523 b by moving thesemiconductor laser device 521 in the direction of arrow in the figure. - Although the
columnar projection 529 is formed on the surface of the housingmain body 526 in the fourteenth embodiment, it is acceptable to, alternatively, form aconical projection 539 on the surface of the housingmain body 526 as shown inFIG. 30 . When theconical projection 539 is formed, thethin metal plate 533 may be provided with acut 533 b whose inner wall surface is a conical surface. Desirably, the height of the columnar or conical projection may be set such that a top of the projection is lower than the light-emitting point of thelaser chip 504, in order to prevent the laser light from impinging on the projection. The outgoing beam of thesemiconductor laser 504 conically expands from the light-emitting point, the expansion being smaller as located nearer to the light-emitting point. Therefore, the conical shape is more desirable as the shape of the projection. Moreover, when theprojection 539 is formed on the top surface of the housingmain body 526, it is acceptable to provide a back surface of thethin metal plate 533 with a depression engageable with theprojection 539 although not shown. When the depression engageable with theprojection 539 is provided on the back surface of thethin metal plate 533, thesemiconductor laser device 521 can easily be mounted on the surface of the housingmain body 526 from above thehousing 522. - Although the
cut 523 b engageable with thecolumnar projection 529 is provided at the edge portion of thethin metal plate 523 in the fourteenth embodiment, it is acceptable to provide adepression 543 c engageable with thecolumnar projection 529 on the back surface side of athin metal plate 543 as shown inFIG. 31 . The inner wall surface of the depression is a cylindrical surface. Moreover, the position of thedepression 543 c roughly coincides with the position of the light-emittingend surface 504 a. That is, thedepression 543 c is located in the neighborhood of the light-emitting point of thelaser chip 504. -
FIG. 32 shows a schematic view of asemiconductor laser device 551 according to a fifteenth embodiment of the present invention as viewed from the back surface side.FIG. 33 shows ahousing 552 of the fifteenth embodiment of the present invention as viewed from the front surface side. InFIG. 32 , same constituent parts as those of the thirteenth embodiment shown inFIG. 28 are denoted by the same reference numerals as the components ofFIG. 28 . - As shown in
FIG. 32 , thesemiconductor laser device 551 has athin metal plate 553, on the back surface of which a circular arc-shapedgroove 553 c (allowed to partway penetrate the thin metal plate 553) is provided. Alaser chip 504 is fixed to the top surface of thethin metal plate 553 via a submount. Thegroove 553 c is formed so as to roughly coincide with a circumference of a circle centered on the light-emitting point (the center of the front end surface (light-emittingend surface 504 a)) of thelaser chip 504. Moreover, aresin frame 508 integrated with electrode leads 507 is formed on a top surface of thethin metal plate 553. That is, thethin metal plate 553 is integrated with theresin frame 508 and the electrode leads 507. - As shown in
FIG. 33 , thehousing 552 includes a housingmain body 556 and a circular arc-shapedprojection 559 that is provided on a top surface of the housingmain body 556 and engageable with thegroove 553 c of thethin metal plate 553. The length in the circumferential direction of theprojection 559 is shorter than the length in the circumferential direction of thegroove 553 c. - When the
semiconductor laser device 551 is mounted on thehousing 552, theprojection 559 of thehousing 522 is fit into thegroove 553 c of thesemiconductor laser device 521, and thesemiconductor laser device 521 is slid with respect to thehousing 522. By this operation, thethin metal plate 553 rotates substantially around the light-emitting point of thelaser chip 504 while being supported by theprojection 559, whereby the optical axis of the outgoing beam of thesemiconductor laser device 551 is adjusted. - In the fifteenth embodiment, the
groove 553 c engageable with the circular arc-shapedprojection 559 is formed at the back surface side of thethin metal plate 553. Alternatively, as shown inFIG. 34 , agroove 558 c engageable with the circular arc-shapedprojection 559 may be formed at a back surface of aresin frame member 558 as one example of the resin member. Thegroove 558 c is formed so as to roughly coincide with a circumference of a circle centered on the light-emitting point of the laser chip. - Also, in the fifteenth embodiment, one circular arc-shaped
projection 559 fittable into thegroove 553 c of thethin metal plate 553 is formed on the top surface of the housingmain body 556. Alternatively, as shown in FIG. 35, twocolumnar projections 569 may be formed on a top surface of a housingmain body 566 of ahousing 562. - Any one of the semiconductor laser devices described above and the associated housing may be incorporated in optical pickup devices.
- In the thirteenth through fifteenth embodiments and the modification examples thereof, the semiconductor laser device is fixed to the housing with an adhesive such as a photosetting resin after the optical axis of the laser chip is adjusted.
- Embodiments of the invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.
Claims (72)
1. A semiconductor laser device comprising:
a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion;
a second lead extending along the lead portion of the first lead; and
a retention portion made of an insulative material that integrally retains the first lead and the second lead,
wherein the mounting portion of the first lead has a back surface exposed from the retention portion, and the first lead further has a tie bar portion projecting from the mounting portion along the back surface of the mounting portion.
2. The semiconductor laser device as claimed in claim 1 , wherein
the tie bar portion projects in a direction perpendicular to an optical axis of the semiconductor laser chip.
3. The semiconductor laser device as claimed in claim 1 , wherein
the tie bar portion has an end in a projecting direction thereof, the end being located farther away from the semiconductor laser chip than any portion of the mounting portion.
4. The semiconductor laser device as claimed in claim 1 , wherein
the tie bar portion has a width equal to or greater than a width of the semiconductor laser chip.
5. The semiconductor laser device as claimed in claim 1 , wherein
the second lead has an anti-fall portion for restraining movement of the second lead relative to the retention portion.
6. The semiconductor laser device as claimed in claim 1 , wherein
the first lead has a recess portion at a front edge of the mounting portion, the recess portion receding so as to indicate a position in which the semiconductor laser chip is mounted; and
an inner edge of the recess portion corresponding to a portion just ahead of the semiconductor laser chip is inclined with respect to an optical axis of the semiconductor laser chip.
7. The semiconductor laser device as claimed in claim 1 , wherein
the first lead comprises an odd-shaped frame of a partially varied thickness.
8. The semiconductor laser device as claimed in claim 7 , wherein
the mounting portion of the first lead has a thickness that is smaller in a part on which the semiconductor laser chip is positioned than in remainder of the mounting portion.
9. The semiconductor laser device as claimed in claim 7 , wherein
a thickness of the lead portion of the first lead is greater than a thickness of the mounting portion so that a difference in level between an upper surface of the semiconductor laser chip and an upper surface of the lead portion of the first lead is reduced.
10. The semiconductor laser device as claimed in claim 9 , wherein
the mounting portion and the lead portion of the first lead are welded together.
11. The semiconductor laser device as claimed in claim 9 , wherein
the upper surface of the semiconductor laser chip and the upper surface of the lead portion of the first lead are electrically connected together via a wire.
12. The semiconductor laser device as claimed in claim 1 , wherein
the mounting portion of the first lead has a through hole in a region other than a mounting region in which the semiconductor laser chip is located, said through hole connecting a top surface and a back surface of the mounting portion;
the back surface of the mounting portion has a recess, which is continuous from the through hole and surrounds a periphery of the through hole; and
the recess is filled with a material of the retention portion supplied from a top surface side of the mounting portion through the through hole.
13. The semiconductor laser device as claimed in claim 1 , wherein
the mounting portion of the first lead has a cut-and-raised portion in a region other than a mounting region in which the semiconductor laser chip is located, said cut-and-raised portion defining a through-hole connecting a top surface and a back surface of the mounting portion; and
a space on a back side of the cut-and-raised portion is filled with a material of the retention portion supplied from a front surface side of the mounting portion through the through hole.
14. The semiconductor laser device as claimed in claim 1 , wherein
each of the lead portion of the first lead and the second lead has a local thin neck at an outer lead portion projecting from the retention portion.
15. The semiconductor laser device as claimed in claim 14 , wherein
each of the leads comprises a core material plated with a metal having good solder wettability to the core material.
16. The semiconductor laser device as claimed in claim 15 , wherein
the core material comprises Cu, and an outermost surface of the plating metal is made of Sn or Au.
17. The semiconductor laser device as claimed in claim 1 , wherein
the retention portion is made of a resin.
18. The semiconductor laser device as claimed in claim 1 , wherein
the retention portion is made of ceramics.
19. The semiconductor laser device as claimed in claim 1 , wherein
the retention portion has a black color.
20. The semiconductor laser device as claimed in claim 1 , wherein
a cover for protecting the semiconductor laser chip is provided on the retention portion.
21. An optical pickup device comprising:
a housing; and
the semiconductor laser device as claimed in claim 1 ,
wherein the semiconductor laser device is mounted to the housing with both the mounting portion of the first lead and the tie bar portion being in contact with the housing.
22. An optical pickup device comprising:
a semiconductor laser device having a metallic heat sink and a semiconductor laser chip fixed to a top surface of the heat sink; and
a housing to support the semiconductor laser device;
the housing having a metallic contact surface put in surface contact with a greater part of a back surface of the heat sink.
23. The optical pickup device as claimed in claim 22 , wherein
roughly entirety of the back surface of the heat sink is put in surface contact with the contact surface of the housing.
24. The optical pickup device as claimed in claim 22 , wherein
the back surface of the heat sink is fixed to the contact surface of the housing with a metallic brazing material.
25. The optical pickup device as claimed in claim 22 , wherein
the housing has side surfaces which are curved surfaces.
26. The optical pickup device as claimed in claim 22 , wherein
the heat sink is provided with a recess portion or a through hole.
27. The optical pickup device as claimed in claim 22 , wherein
the semiconductor laser device has a resin provided only on a top surface side of the heat sink.
28. The optical pickup device as claimed in claim 24 , wherein
at least one of the back surface of the heat sink or the contact surface of the housing has been surface-treated to improve wettability of the metallic brazing material.
29. An optical pickup device comprising:
a semiconductor laser device having a metallic heat sink and a semiconductor laser chip fixed to a top surface of the heat sink;
a housing to support the semiconductor laser device; and
a substrate disposed between the back surface of the heat sink and the housing,
the substrate having a top surface put in surface contact with a greater part of a back surface of the heat sink, and
the housing having a metallic contact surface put in surface contact with a greater part of a back surface of the substrate.
30. The optical pickup device as claimed in claim 29 , wherein
roughly entirety of the back surface of the substrate is put in surface contact with the top surface of the heat sink, and
roughly entirety of the back surface of the substrate is put in surface contact with the contact surface of the housing.
31. A semiconductor laser device comprising:
a first lead including a plate-like mounting portion;
a second lead which is separate from the first lead;
a retention portion made of an insulative material that integrally retains the first lead and the second lead;
a semiconductor laser chip that is mounted in a front part of the mounting portion and emits laser light forward and backward;
a monitoring photodetector provided at the mounting portion such that the monitoring photodetector is disposed behind the semiconductor laser chip; and
a light reflector which is separate from the retention portion and disposed behind the monitoring photodetector on the mounting portion, wherein the light reflector, upon receipt of at least part of laser light emitted backward from the semiconductor laser chip, reflects the light toward the monitoring photodetector.
32. The semiconductor laser device as claimed in claim 31 , wherein
the light reflector is made of a white resin.
33. The semiconductor laser device as claimed in claim 31 , wherein
the light reflector is made of a resin plated with metal.
34. The semiconductor laser device as claimed in claim 31 , wherein
the light reflector is made of a metal.
35. The semiconductor laser device as claimed in claim 31 , wherein
the light reflector has a reflection surface inclined with respect to a laser light emitting direction of the semiconductor laser chip so as to reflect the laser light from the semiconductor laser chip toward the monitoring photodetector.
36. The semiconductor laser device as claimed in claim 31 , wherein
the semiconductor laser chip is mounted on the mounting portion via a plate-like submount, and the monitoring photodetector is housed in a portion, of the submount, which is located behind the semiconductor laser chip.
37. A semiconductor laser device manufacturing method for manufacturing the semiconductor laser device claimed in claim 31 , wherein at least the monitoring photodetector and the light reflector are concurrently bonded onto the mounting portion.
38. A semiconductor laser device comprising:
a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion;
a second lead extending along the lead portion of the first lead; and
a retention portion made of an insulative material that integrally retains the first lead and the second lead, wherein the retention portion includes a frame member disposed on a semiconductor laser chip side of the first lead, and the frame member has a window portion for emitting laser light from the semiconductor laser chip;
a cap to be fit in the frame member of the retention portion; and
a pressure contact structure that urges the frame member of the retention portion against the cap, and vice versa, in a direction roughly parallel to an optical axis of the semiconductor laser chip so as to bring the frame member and the cap in pressure contact with each other when the cap is fit in the frame member of the retention portion.
39. The semiconductor laser device as claimed in claim 38 , wherein
the cap has a projection engaged with the window portion of the frame member of the retention portion.
40. The semiconductor laser device as claimed in claim 38 , wherein
the cap has one or more projections that project in a direction roughly parallel to the optical axis of the semiconductor laser chip,
the frame member of the retention portion has one or more recess portions receding in the direction roughly parallel to the optical axis of the semiconductor laser chip, and
the pressure contact structure has said one or more projections and said one or more recess portions, and said or each projection is engaged with a corresponding recess portion while being brought in pressure contact therewith when the cap is attached to the frame member of the retention portion.
41. The semiconductor laser device as claimed in claim 40 , wherein
said or each projection has a hemispherical shape, and
said or each recess portion has a shape complementary to the projection.
42. The semiconductor laser device as claimed in claim 40 , wherein
the cap has two opposite outer surfaces which extend in a direction roughly perpendicular to the optical axis of the semiconductor laser chip,
the frame member of the retention portion has two opposite inner surfaces which extend in the direction roughly perpendicular to the optical axis of the semiconductor laser chip,
the projections are provided at the two outer surfaces of the cap, two to outer surface, and
the recess portions are provided at the two inner surfaces of the frame member of the retention portion, two to inner surface.
43. The semiconductor laser device as claimed in claim 38 , wherein
the cap has a handling lug.
44. The semiconductor laser device as claimed in claim 43 , wherein
the first lead has tie bar portions that project in opposite directions roughly perpendicular to the optical axis of the semiconductor laser chip from respective opposite end edges of the mounting portion that are situated in the directions roughly perpendicular to the optical axis of the semiconductor laser chip, and
the lug of the cap is formed so as to be oriented in a direction roughly parallel to the optical axis of the semiconductor laser chip when the cap is fit in the frame member of the retention portion.
45. The semiconductor laser device as claimed in claim 43 , wherein
the lug is defined between two lug-forming recess portions that are opposed to each other at an interval on one surface of the cap.
46. The semiconductor laser device as claimed in claim 45 , wherein
the lug-forming recess portions each have a crescentic shape.
47. The semiconductor laser device as claimed in claim 38 , wherein
the retention portion and the cap are made of an identical material.
48. The semiconductor laser device as claimed in claim 38 , wherein
the retention portion and the cap is made of a resin.
49. The semiconductor laser device as claimed in claim 38 , wherein
the retention portion and the cap have a black color.
50. A semiconductor laser device which comprises a metal support having a mounting surface and a front surface adjoining the mounting surface, and a semiconductor laser chip mounted on the mounting surface, and which emits laser light from a light-emitting end surface located on the front surface side of the semiconductor laser chip, wherein
at least part of the front surface is inclined with respect to the light-emitting end surface and parallel to a plane obtained by rotating the light-emitting end surface around a perpendicular line to the mounting surface.
51. The semiconductor laser device as claimed in claim 50 , wherein
a submount made of a dielectric substance or a semiconductor is provided between the semiconductor laser chip and the metal support.
52. The semiconductor laser device as claimed in claim 51 , wherein
an end surface located on the front surface side of the submount is inclined with respect to the light-emitting end surface and parallel to a plane obtained by rotating the light-emitting end surface around the perpendicular line to the mounting surface.
53. The semiconductor laser device as claimed in claim 50 , wherein
the metal support is a frame made of a metal thin plate.
54. The semiconductor laser device as claimed in claim 51 , wherein
an end surface located on the front surface side of the submount is roughly parallel to said at least part of the front surface.
55. A semiconductor laser device comprising:
a main body;
a semiconductor laser chip fixed to the main body; and
a first rotation guide mechanism that is provided at the main body and allows the main body to be rotatably supported so that a laser light emitting direction of the semiconductor laser chip is adjustable.
56. The semiconductor laser device as claimed in claim 55 , wherein
the first rotation guide mechanism enables the main body to rotate around a neighborhood of a light-emitting point of the semiconductor laser chip.
57. The semiconductor laser device as claimed in claim 55 , wherein
the main body is made of a metal plate.
58. The semiconductor laser device as claimed in claim 55 , wherein
the first rotation guide mechanism has a curved portion provided at an edge of the main body.
59. The semiconductor laser device as claimed in claim 55 , wherein
the first rotation guide mechanism comprises a recess portion provided at the main body.
60. The semiconductor laser device as claimed in claim 59 , wherein
the recess portion consists of a cut provided at an edge of the main body.
61. The semiconductor laser device as claimed in claim 58 , wherein
an inner wall surface of the recess portion is a conical surface.
62. The semiconductor laser device as claimed in claim 55 , wherein
the first rotation guide mechanism comprises a groove provided at the main body in such a manner that the groove roughly coincides with a circumference of a circle centered on a neighborhood of the light-emitting point of the semiconductor laser chip.
63. The semiconductor laser device as claimed in claim 55 , wherein
the main body comprises a metal plate and a resin member integrated with the metal plate, and
the first rotation guide mechanism comprises a groove provided at the resin member in such a manner that the groove roughly coincides with a circumference of a circle centered on the semiconductor laser chip.
64. A housing comprising:
a housing main body; and
a second rotation guide mechanism that is provided at the housing main body and rotatably supports a semiconductor laser device so that a laser light emitting direction of the semiconductor laser device is adjustable.
65. The housing as claimed in claim 64 , wherein
the second rotation guide mechanism enables the semiconductor laser device to rotate around a neighborhood of the light-emitting point of the semiconductor laser device.
66. The housing as claimed in claim 64 , wherein
the second rotation mechanism comprises a guide portion provided at the housing main body and having a curved surface.
67. The housing as claimed in claim 64 , wherein
the second rotation mechanism comprises at least one projection.
68. The housing as claimed in claim 67 , wherein
the projection has a conical shape.
69. The housing as claimed in claim 67 , wherein
the projection has a circular arc shape.
70. The housing as claimed in claim 67 , wherein
the second rotation mechanism has one projection.
71. The housing as claimed in claim 67 , wherein
the second rotation mechanism has two projections.
72. An optical pickup device comprising a semiconductor laser device and a housing, wherein
the semiconductor laser device comprises:
a main body;
a semiconductor laser chip fixed to the main body; and
a first rotation guide mechanism that is provided at the main body and allows the main body to be rotatably supported so that a laser light emitting direction of the semiconductor laser chip is adjustable, and
the housing comprises:
a housing main body; and
a second rotation guide mechanism that is provided at the housing main body and rotatably supports the semiconductor laser device so that the laser light emitting direction of the semiconductor laser device is adjustable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/812,715 US7567602B2 (en) | 2004-03-30 | 2007-06-21 | Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device |
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004098613A JP2005286136A (en) | 2004-03-30 | 2004-03-30 | Semiconductor laser device |
JPP2004-098613 | 2004-03-30 | ||
JP2004127635A JP4362411B2 (en) | 2004-04-23 | 2004-04-23 | Semiconductor laser device and optical pickup device having the same |
JPP2004-127635 | 2004-04-23 | ||
JPP2004-186259 | 2004-06-24 | ||
JP2004186259A JP2006013037A (en) | 2004-06-24 | 2004-06-24 | Semiconductor laser device and housing loading it and optical pickup device |
JPP2004-192960 | 2004-06-30 | ||
JPP2004-193503 | 2004-06-30 | ||
JP2004192960A JP4272597B2 (en) | 2004-06-30 | 2004-06-30 | Semiconductor laser device |
JP2004193503A JP4266888B2 (en) | 2004-06-30 | 2004-06-30 | Optical pickup |
JPP2005-012554 | 2005-01-20 | ||
JP2005012554A JP2006202955A (en) | 2005-01-20 | 2005-01-20 | Semiconductor laser apparatus and its manufacturing method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/812,715 Division US7567602B2 (en) | 2004-03-30 | 2007-06-21 | Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050286581A1 true US20050286581A1 (en) | 2005-12-29 |
Family
ID=35050150
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/090,182 Abandoned US20050286581A1 (en) | 2004-03-30 | 2005-03-28 | Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device |
US11/812,715 Expired - Fee Related US7567602B2 (en) | 2004-03-30 | 2007-06-21 | Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US11/812,715 Expired - Fee Related US7567602B2 (en) | 2004-03-30 | 2007-06-21 | Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device |
Country Status (4)
Country | Link |
---|---|
US (2) | US20050286581A1 (en) |
KR (2) | KR100702106B1 (en) |
CN (2) | CN100533881C (en) |
TW (1) | TW200603132A (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN100477417C (en) | 2009-04-08 |
KR20060112260A (en) | 2006-10-31 |
CN100533881C (en) | 2009-08-26 |
US7567602B2 (en) | 2009-07-28 |
KR100749881B1 (en) | 2007-08-21 |
CN101034789A (en) | 2007-09-12 |
KR100702106B1 (en) | 2007-04-02 |
TW200603132A (en) | 2006-01-16 |
US20070248133A1 (en) | 2007-10-25 |
KR20060045030A (en) | 2006-05-16 |
CN1677776A (en) | 2005-10-05 |
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