JP4362411B2 - Semiconductor laser device and optical pickup device having the same - Google Patents

Description

  The present invention relates to a semiconductor laser device, and more particularly to a frame type semiconductor laser device.

  The present invention also relates to an optical pickup device provided with such a semiconductor laser device.

In order to read information recorded on an information recording medium such as a CD-ROM (compact disk-read only memory) or an MD (mini disk), a semiconductor laser device is widely used as a component of an optical pickup device. Among the semiconductor laser devices, there is a frame type laser device as disclosed in Japanese Patent Application Laid-Open No. 2002-43679. This frame type laser device includes a package in which a metal lead frame and a plurality of leads serving as electrodes are integrally formed of resin. A semiconductor laser chip is mounted on the element arrangement portion (chip mounting portion) of the lead frame, and the semiconductor laser chip and the electrode lead are electrically connected by a wire. The thing of patent document 1 is aiming at improving the thermal radiation efficiency by providing the wing | blade part which this lead frame protruded from the side surface of the said resin.
JP 2002-43679 A

  However, recent optical pickup devices often use a high-power semiconductor laser chip, and there is a need to further improve the heat dissipation characteristics of the semiconductor laser chip.

  Accordingly, an object of the present invention is to provide a semiconductor laser device having excellent heat dissipation and excellent productivity.

  Another object of the present invention is to provide an optical pickup device provided with such a semiconductor laser device.

In order to solve the above problems, a semiconductor laser device of the present invention is
A first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending continuously from the mounting portion;
A second lead extending along the lead portion of the first lead;
A holding portion made of an insulating material that holds the first lead and the second lead together;
The first lead, with the rear surface of the mounting portion is exposed from the holding portion along the back surface of the mounting portion have a tie bar portion protruding from the mounting portion,
The first lead is composed of a deformed frame partially different in thickness,
The thickness of the lead portion of the first lead is greater than the thickness of the mounting portion so as to reduce the height difference between the upper surface of the semiconductor laser chip and the upper surface of the lead portion of the first lead. And
The upper surface of the semiconductor laser chip and the upper surface of the lead portion of the first lead are connected by a wire .

  Here, the “back surface of the mounting portion” of the first lead refers to a surface opposite to the surface on which the semiconductor laser chip is mounted.

  In the semiconductor laser device of the present invention, the semiconductor laser chip is mounted on the mounting portion of the first lead. The back surface of the mounting portion of the first lead is exposed from the holding portion, and the tie bar portion protrudes from the mounting portion along the back surface of the mounting portion. Therefore, if the mounting portion (back surface) and the tie bar portion of the first lead are brought into contact with the housing of the optical pickup device when the semiconductor laser device is mounted on the optical pickup device, for example, the mounting portion is operated during operation of the semiconductor laser chip. At the same time, the tie bar part works for heat dissipation. That is, the heat generated by the semiconductor laser chip is radiated to the housing through the mounting portion and the tie bar portion. Therefore, the heat dissipation area is widened and the heat dissipation is improved.

In the semiconductor laser device, the first lead is formed of a deformed frame having a partially different thickness. In particular, the thickness of the lead portion of the first lead is smaller than the thickness of the mounting portion so as to reduce the height difference between the upper surface of the semiconductor laser chip and the upper surface of the lead portion of the first lead. It is thick. Therefore, the wire connecting the upper surface of the semiconductor laser chip and the upper surface of the lead portion of the first lead is easily provided by wire bonding. Therefore, this semiconductor laser device is excellent in productivity.

  In one embodiment of the semiconductor laser device, the tie bar portion protrudes in a direction perpendicular to the optical axis of the semiconductor laser chip.

  In the semiconductor laser device of this embodiment, since the tie bar portion protrudes in a direction perpendicular to the optical axis of the semiconductor laser chip, the laser light emitted from the semiconductor laser chip may be blocked by the tie bar portion. Absent.

  In one embodiment, the tip of the tie bar portion in the protruding direction is located farther from the semiconductor laser chip than an arbitrary portion of the mounting portion.

  In the semiconductor laser device according to this embodiment, the tip of the tie bar portion is located farther from the semiconductor laser chip than an arbitrary portion of the mounting portion. Therefore, the heat dissipation area is widened and the heat dissipation is further improved.

In one semiconductor laser device of the embodiment, wherein the width of the tie bar portions is equal to or wider than the width of the semiconductor laser chip.

  Here, the “width” of the tie bar portion means a width in a direction perpendicular to the protruding direction of the tie bar portion in a plane along the back surface of the mounting portion. The “width” of the semiconductor laser chip means a width in a direction perpendicular to the optical axis of laser light emitted from the chip.

  In the semiconductor laser device of this embodiment, since the width of the tie bar portion is the same as or larger than the width of the semiconductor laser chip, the heat radiation area is widened and the heat radiation performance is further improved.

  In the semiconductor laser device according to one embodiment, the second lead has a retaining portion for restricting movement of the second lead with respect to the holding portion.

  In the semiconductor laser device of this embodiment, the second lead has a retaining portion that restricts the movement of the second lead relative to the holding portion. Therefore, for example, when soldering the second lead in a stage where the semiconductor laser device is mounted on an optical pickup device, for example, even if the material of the holding portion is softened by the heat of the solder, thanks to the retaining portion, The second lead does not move relative to the holding part. Therefore, soldering is performed stably and the productivity is excellent.

  In one embodiment, the first lead has a recess recessed at the front edge of the mounting portion so as to indicate the mounting position of the semiconductor laser chip, and the first lead corresponds to immediately before the semiconductor laser chip. The inner edge of the recess is inclined with respect to the optical axis of the semiconductor laser chip.

  Here, the “front edge” of the mounting portion defines the direction in which the semiconductor laser chip emits laser light to the outside as “front”.

  In the semiconductor laser device according to this embodiment, the first lead has a recess recessed at the front edge of the mounting portion so as to indicate the mounting position of the semiconductor laser chip. When the semiconductor laser chip is mounted on the semiconductor laser chip, it is easy to position the semiconductor laser chip. For example, when the semiconductor laser chip is mounted on the mounting portion via a rectangular plate-shaped submount member, the front edge of the submount member may be aligned along the edge of the recess. In addition, the inner edge of the recess corresponding to the position immediately before the semiconductor laser chip is inclined with respect to the optical axis of the semiconductor laser chip. Therefore, even when return light from a laser light irradiation object (for example, an information recording medium) is incident on the recess or the submount member during the operation of the semiconductor laser chip, the return light is transmitted to the inner edge of the recess or the submount member. The semiconductor laser chip is reflected in a direction different from the direction in which the laser beam is emitted by the leading edge. As a result, in a device (for example, an optical pickup device) using this semiconductor laser device, it is possible to prevent the return light from the laser light irradiation target from causing noise.

In the semiconductor laser device of one embodiment,
A through hole is provided in a region other than the region where the semiconductor laser chip is mounted in the mounting portion of the first lead.
The back surface of the mounting part is provided with a recess surrounding the through hole and surrounding the through hole,
The material of the holding part fills the depression through the through hole from the surface side of the mounting part.

  In the semiconductor laser device of this embodiment, since the material of the holding part fills the depression from the surface side of the mounting part through the through hole, the mounting part is sandwiched by the holding part. Therefore, it is possible to prevent the mounting portion and the holding portion from peeling off.

  If the material of the holding part just fills the depression, the back side of the mounting part has a flat structure. By doing so, when the semiconductor laser device is mounted on, for example, an optical pickup device, the mounting portion (back surface) and the tie bar portion of the first lead can be in close contact with the housing of the optical pickup device. Therefore, the heat dissipation characteristics are not impaired.

In the semiconductor laser device of one embodiment,
A cut-and-raised portion is provided in a region other than the region where the semiconductor laser chip is mounted in the mounting portion of the first lead so as to form a through hole passing through the front and back of the mounting portion,
The material of the holding part fills the space on the back side of the cut and raised part from the surface side of the mounting part through the through hole.

  In the semiconductor laser device of this embodiment, since the material of the holding part fills the space behind the cut and raised part from the surface side of the mounting part through the through hole, the mounting part is sandwiched by the holding part. It is. Therefore, it is possible to prevent the mounting portion and the holding portion from peeling off.

  Note that if the material of the holding part just fills the space on the back side of the cut-and-raised part, the back side of the mounting part has a flat structure. By doing so, when the semiconductor laser device is mounted on, for example, an optical pickup device, the mounting portion (back surface) and the tie bar portion of the first lead can be in close contact with the housing of the optical pickup device. Therefore, the heat dissipation characteristics are not impaired.

The optical pickup device of the present invention is
A housing,
According to a first aspect of the present invention, there is provided the semiconductor laser device according to the first aspect, wherein the first lead mounting portion and the tie bar portion are attached in contact with the housing.

  In the optical pickup device according to the present invention, the semiconductor laser device according to the present invention is attached in such a manner that the mounting portion and the tie bar portion of the first lead are in contact with the housing. Therefore, the tie bar portion works together with the mounting portion for heat radiation during the operation of the semiconductor laser chip. That is, the heat generated by the semiconductor laser chip is radiated to the housing through the mounting portion and the tie bar portion. Therefore, the heat dissipation area is widened and the heat dissipation is improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 shows a frame-type semiconductor laser device 40 that is the basis of the present invention as viewed obliquely. 2A is a view of the semiconductor laser device 40 from above, FIG. 2B is a view of FIG. 2A viewed from the right side, and FIG. 2C is a view of FIG. 2A. Each is shown from the bottom. It should be noted that the vertical and horizontal directions of the semiconductor laser device 40 in this embodiment are for convenience of explanation.

  As shown in FIGS. 1 and 2A, this frame type semiconductor laser device 40 includes a first lead 1 having a mounting portion 1a on which a semiconductor laser chip 5 is mounted, and a plurality of second signals for signal input / output. Leads 21, 22 and 23, and resin part 3 as a holding part for holding first lead 1 and second leads 21, 22 and 23 together are provided.

  Specifically, the first lead 1 protrudes from the mounting portion 1a along a substantially rectangular plate-shaped mounting portion 1a, a lead portion 1b that extends and extends continuously from the mounting portion 1a, and a back surface 1c of the mounting portion 1a. Tie bar portions 6a and 6b. A semiconductor laser chip 5 is mounted on the mounting portion 1 a via a rectangular plate-shaped submount member 4. The semiconductor laser chip 5 has a rectangular parallelepiped shape elongated in the optical axis direction, and emits laser light toward the front (upward in FIG. 2A). As shown in FIG. 2C, the back surface 1 c of the mounting portion 1 a is exposed from the resin portion 3.

  The tie bar portions 6a and 6b protrude in the direction perpendicular to the optical axis of the semiconductor laser chip 5, that is, in the left-right direction in FIGS. 2 (a) and 2 (c). The leading ends of the tie bar portions 6a and 6b in the protruding direction are located farther from the semiconductor laser chip 5 than any part of the mounting portion 1a. The width of the tie bar portions 6a and 6b (width in the direction perpendicular to the protruding direction) is equal to or greater than the width of the semiconductor laser chip 5 (width in the direction perpendicular to the optical axis of the laser light emitted from this chip). ing.

  Further, the first lead 1 has a recessed portion 7 that is retracted so as to indicate the mounting position of the semiconductor laser chip 5 at the front edge 1e of the mounting portion 1a. This facilitates positioning of the submount member 4 and the semiconductor laser chip 5 when the submount member 4 and the semiconductor laser chip 5 are attached on the mounting portion 1a in the manufacturing stage. For example, the front edge of the submount member 4 may be aligned along the edge of the recess 7.

  The second leads 21, 22, and 23 extend elongated along the lead portion 1 b of the first lead 1. As shown in FIG. 1, the inner ends 21 a, 22 a, and 23 a of the second leads 21, 22, and 23 are exposed in the resin portion 3 that is molded in a frame shape. A wire made of Au wire (not shown) is wired from the semiconductor laser chip 5 and the submount member 4 to the inner ends 21a, 22a, 23a of the second leads 21, 22, 23.

  In this example, the resin portion 3 is made of a black insulating resin material such as an epoxy resin. Therefore, the resin part 3 is easily formed by resin molding using a mold.

  As described above, in this semiconductor laser device 40, the back surface 1c of the mounting portion 1a of the first lead 1 is exposed from the resin portion 3, and the tie bar portions 6a and 6b are mounted along the back surface 1c of the mounting portion 1a. Protruding from. Moreover, the area of the tie bar portions 6a and 6b is secured to a certain extent. Therefore, when the semiconductor laser device is mounted on, for example, an optical pickup device, the semiconductor laser can be obtained by bringing the mounting portion 1a (the back surface 1c) of the first lead 1 and the tie bar portions 6a and 6b into contact with the housing of the optical pickup device. During operation of the chip 5, the tie bar portions 6a and 6b work together with the mounting portion 1a for heat dissipation. That is, the heat generated by the semiconductor laser chip 5 is radiated to the housing through the mounting portion 1a and the tie bar portions 6a and 6b. Therefore, the heat dissipation area is widened and the heat dissipation is improved.

  3A to 3B show a schematic process for manufacturing the semiconductor laser device 40.

  i) First, a plate material made of Cu is punched to obtain a frame 90 having a pattern as shown in FIG. 3A (punching step). At this time, the punching is performed from the back surface 1c side of the mounting portion. As a result, burrs generated by punching appear on the mounting surface 1a side. Therefore, when the semiconductor laser device 40 is mounted on another device such as an optical pickup, the back surface 1c can be brought into close contact with the mounting surface of the other device. Therefore, heat dissipation is improved. In this frame 90, a plurality of sets of the first lead 1 and the second leads 21, 22, 23 are arranged in two rows along bars 91, 92 extending in the left-right direction in FIG. The bars 91 and 92 are connected by a connecting bar 93. Further, the mounting portions 1 a of the adjacent first leads 1 are connected via a tie bar 6.

  ii) Next, the punched frame 90 is partially bent (bending step). The manner of bending will be described later.

  iii) Next, as shown in FIG. 3B, the resin part 3 is provided on the bent frame 90 by resin molding using a mold (resin molding step).

  iv) Next, the semiconductor laser chip 5 is mounted on the mounting portion 1a of the first lead 1 via the submount member 4 (die bonding step).

  v) Next, wires made of Au wire are routed from the semiconductor laser chip 5 and the submount member 4 to the inner ends 21a, 22a, 23a of the second leads 21, 22, 23 (wire bonding step).

  At this stage, it is desirable to provide a lid for protecting the semiconductor laser chip 5 on the resin portion 3.

  vi) Next, the lead portion 1b of the first lead 1 and the portions near the bars 91 and 92 of the second leads 21, 22, and 23 and the tie bar 6 are cut to obtain individual semiconductor laser devices 40 (tie bar cut). Process). At this time, the lead portion 1b of the first lead 1 and a part of the second leads 21, 22, 23 (outer lead portions) are left protruding from the resin portions 3 of the individual semiconductor laser devices 40. Further, the parts 6 a and 6 b of the tie bar 6 are left protruding from the resin portion 3 of each semiconductor laser device 40.

  vii) Outer lead portions protruding from the resin portion 3 of the lead portion 1b and the second leads 21, 22, and 23 of the first lead 1 are subjected to metal plating whose outermost surface is Ag (silver) or Au (gold). (Plating process). Thereby, when soldering each outer lead part after completion, solder wettability can be improved. When the outermost surface is Ag, a brazing material containing no Pb having a high melting point can be used instead of the brazing material (solder) containing Pb, which is said to be unfavorable to the environment. The metal on the outermost surface is not limited to these, and may be Sn, Ni, Zn or the like that can improve solder wettability.

  In this way, the semiconductor laser device 40 is easily manufactured.

  FIG. 4A shows a portion of the frame 90 after the bending process of ii) as seen from above corresponding to one semiconductor laser device. 4B shows a cross section taken along line A-A ′ in FIG. 4A, and FIG. 4C shows a cross section taken along line B-B ′ in FIG.

  As can be seen from FIG. 4A and FIG. 4B, the lead portion 1b of the first lead 1 is provided with a retaining portion 1f bent by a bending process, and similarly, the second leads 21, 22, 23 is also provided with retaining portions 21f, 22f, and 23f bent by a bending process. The retaining portions 21f, 22f, and 23f of the second leads 21, 22, and 23 are bent at the same angle as the lead portion 1b of the first lead 1 when viewed from the direction shown in FIG. Therefore, when the second leads 21, 22, and 23 are soldered at the stage of mounting the semiconductor laser device on, for example, an optical pickup device, even if the material of the resin portion 3 is softened by the heat of the solder, the retaining portions 1f, Thanks to 21f, 22f, and 23f, the second leads 21, 22, and 23 do not move relative to the resin portion 3. Therefore, soldering is performed stably and the productivity is excellent.

  In particular, the retaining portion 1f of the first lead 1 and the retaining portion 22f of the second lead 22 are processed to be wider than the remaining portions. The effect of restricting the movement of the first lead 1 and the second lead 22 with respect to the resin portion 3 is enhanced.

  Further, as can be seen from FIGS. 4A and 4C, in the mounting portion 1a of the first lead 1, a region other than the region where the semiconductor laser chip 5 is mounted, in this example, both sides of the semiconductor laser chip 5 The cut-and-raised portions 37 and 38 are provided in a region corresponding to the above-mentioned so as to form the through hole 30 passing through the front and back of the mounting portion 1a. After the resin molding step iii), the material of the resin part 3 fills the space on the back side of the raised part through the through hole 30 from the surface side of the mounting part 1a (see FIG. 2C). Accordingly, the mounting portion 1a (more precisely, the raised portions 37 and 38) is sandwiched between the resin portions 3. Therefore, it is possible to increase the bonding strength between the mounting portion 1a and the resin portion 3 and prevent the mounting portion 1a and the resin portion 3 from being peeled off.

  Further, the protrusions 35 and 36 protrude rearward from the mounting portion 1a (downward in FIG. 4A). After the resin molding step (iii), the resin portion 3 is in a state of covering the protrusions 35 and 36. This can further prevent the mounting portion 1a and the resin portion 3 from peeling off.

  In addition, if the material of the resin part 3 just fills the space on the back side of the raised parts 37 and 38, the back surface 1c side of the mounting part 1a has a flat structure. By doing so, when the semiconductor laser device 40 is mounted on, for example, an optical pickup device, the mounting portion 1a (back surface 1c) and the tie bar portions 6a and 6b of the first lead 1 can be in close contact with the housing of the optical pickup device. Therefore, the heat dissipation characteristics are not impaired.

  Instead of bending, by using two frames, a frame for forming the semiconductor laser chip mounting portion 1a and a frame for forming the lead 1b, the semiconductor laser chip mounting portion 1a and the lead 1b are connected by welding, Similarly, the bottom surface side of the semiconductor laser device 40 can have a flat structure.

  4D, instead of the cut-and-raised portions 37 and 38, a through hole 32 is provided through the front and back of the mounting portion 1a, and the periphery of the through hole 32 is connected to the through hole 32 on the back surface 1c of the mounting portion 1a. The example which provided the hollow 31 which surrounds is shown. Also in this case, after the resin molding step iii), the material of the resin portion 3 fills the recess 31 through the through hole 32 from the surface side of the mounting portion 1a. As a result, the mounting portion 1 a is sandwiched between the resin portions 3. Therefore, it is possible to increase the bonding strength between the mounting portion 1a and the resin portion 3 and prevent the mounting portion 1a and the resin portion 3 from being peeled off.

  In addition, if the material of the resin part 3 just fills the hollow 31, the back surface 1c side of the mounting part 1a has a flat structure. By doing so, when the semiconductor laser device 40 is mounted on, for example, an optical pickup device, the mounting portion 1a (back surface 1c) and the tie bar portions 6a and 6b of the first lead 1 can be in close contact with the housing of the optical pickup device. Therefore, the heat dissipation characteristics are not impaired.

  FIG. 4E shows an example in which a deformed frame having a partially different thickness is used as the frame 90 described above. In this example, the remaining portion 1a 'of the mounting portion 1a is thicker than the thickness of the portion 1d where the semiconductor laser chip 5 is mounted in the mounting portion 1a of the first lead 1. Yes. Thereby, the height difference between the upper surface of the semiconductor laser chip 5 and the upper surface of the remaining portion 1a ′ is reduced. Therefore, for example, for grounding (GND) wiring, the upper surface of the semiconductor laser chip 5 and the upper surface of the remaining portion 1a ′ can be easily connected by wire bonding. That is, problems such as wire splashing due to different heights can be solved. Therefore, it is excellent in productivity.

Further, as in the semiconductor laser device of one embodiment of the present invention shown in FIG. 7, the thickness of the lead portion (indicated by 1b ') of the first lead 1 is made larger than the thickness of the mounting portion 1a. Also good. Thereby, the height difference between the upper surface of the semiconductor laser chip 5 and the upper surface of the lead portion 1b 'of the first lead 1 is reduced. Therefore, for example, for grounding (GND) wiring, the upper surface of the semiconductor laser chip 5 and the upper surface of the lead portion 1b ′ of the first lead 1 can be easily connected by wire bonding. That is, problems such as wire splashing due to different heights can be solved. Therefore, it is excellent in productivity. In this case, instead of the bending step, the semiconductor laser chip mounting portion 1a and the lead 1b 'are formed by using two frames, a frame for forming the semiconductor laser chip mounting portion 1a and a frame for forming the lead 1b'. You may connect by welding. Thereby, the 1st lead | read | reed 1 is produced easily. Therefore, this semiconductor laser device is excellent in productivity.

  FIG. 5 shows a schematic configuration of an optical pickup device (the whole is denoted by reference numeral 50) using the semiconductor laser device 40. In addition to the semiconductor laser device 40, the optical pickup device 50 includes an optical system 8 including a beam splitter 10 and a light receiving element 11. These elements are attached to a housing (not shown). Reference numeral 9 denotes an optical disc as an information recording medium which is an object to be irradiated with laser light.

  The laser light L 1 emitted from the semiconductor laser chip 5 passes through the optical system 8, reaches the disk 9, and is reflected by the disk 9. The reflected laser beam L2 returns to the optical system 8, and a part of the laser beam L2 is branched by the beam splitter 10 and enters the light receiving element 11. Information received by the disk 9 is read by the light receiving element 11. Since the tie bar portions 6a and 6b of the semiconductor laser device 40 protrude in the direction perpendicular to the optical axis of the semiconductor laser chip 5, the laser light L1 emitted from the semiconductor laser chip 5 is blocked by the tie bar portions 6a and 6b. There is nothing.

  On the other hand, the portion of the reflected laser light L2 that has passed through the beam splitter 10 as it is enters the semiconductor laser device 40 as return light L3. As described above, the semiconductor laser chip 5 is mounted on the mounting portion 1 a on which the semiconductor laser chip 5 is mounted via the submount member 4. For this reason, the return light L3 is reflected by the inner edge of the submount member 4 or the recess 7, and enters the optical system 8 again, enters the light receiving element 11 via the beam splitter 10, and may become noise.

  Therefore, in the example shown in FIG. 6, the inner edge 7a of the concave portion 7 corresponding to the mounting portion 1a immediately before the semiconductor laser chip 5 is inclined by about 5 degrees with respect to the optical axis of the semiconductor laser chip 5, and the submount. The front edge 4 a of the member 4 is aligned along the inner edge 7 a of the recess 7. The optical axis of the semiconductor laser chip 5 is directed straight forward (upward in FIG. 6). In such a case, even when the return light L3 from the optical disk 9 is incident on the submount member 4 or the recess 7 during the operation of the semiconductor laser chip 5, the return light L3 is transmitted to the front edge 4a or the recess of the submount member 4. 7 is reflected in a different direction from the laser beam L1 emitted from the semiconductor laser chip 5. As a result, in the optical pickup device 50, the return light L3 from the optical disk 9 can be prevented from causing noise.

  Further, since the color of the resin part 3 is black, even if the return light L3 from the optical disk 9 enters the resin part 3, the return light L3 is absorbed by the resin part 3 and is not reflected. Therefore, the return light L3 from the optical disk 9 can be prevented from causing noise.

  In the stage where the semiconductor laser device 40 is mounted on the optical pickup device 50, the outer lead portion protruding from the resin portion 3 of the lead portion 1b of the first lead 1 and the second leads 21, 22, 23 is cut. In many cases, the length is suitable for mounting. When the core material Cu is exposed at the end face of each lead, solder wettability is impaired. Therefore, as shown in FIG. 8, it is desirable to provide locally thin necks 1t, 21t, 22t, and 23t in each outer lead portion. In this case, each outer lead portion can be easily cut at the necks 1t, 21t, 22t, and 23t. In addition, as illustrated in FIG. 9, the cut end surface 21 e is smaller than the case where the cut end surface 21 e is cut at a place other than the neck. Therefore, the Sn or Au surface having good solder wettability is relatively wide compared to the exposed surface (end surface) 21e of the core material Cu. Therefore, when each outer lead portion is soldered at the stage of mounting the semiconductor laser device 40 on the optical pickup device 50, the solder wettability is improved and the productivity is improved.

  In this embodiment, the material of the holding portion is an insulating resin, but may be a ceramic. If the material of the holding part is ceramic, the heat dissipation can be further improved.

1 is a perspective view showing a semiconductor laser device as a basis of the present invention. 2A is a top view of the semiconductor laser device, FIG. 2B is a top view of the semiconductor laser device, and FIG. 2C is a bottom view of the semiconductor laser device. It is a figure which shows each. 3A to 3B are process diagrams showing the manufacturing process of the semiconductor laser device. 4A is a view showing a portion of the frame corresponding to one semiconductor laser device, FIG. 4B is a cross-sectional view taken along line AA ′ in FIG. 4A, and FIG. 4A is a cross-sectional view taken along the line BB 'in FIG. 4A, FIG. 4D is a view corresponding to FIG. 4C of a modified example in which a recess is provided on the back surface of the mounting portion, and FIG. It is a figure corresponding to Drawing 4 (a) of a modification using a frame. It is a figure which shows schematic structure of an optical pick-up apparatus. It is a figure which shows the modification which inclined the inner edge of the recessed part which shows the semiconductor laser chip position of a 1st lead | read | reed. It is a figure which shows the semiconductor laser apparatus of one Embodiment of this invention which made the lead part thicker than the mounting part of the 1st lead. It is a figure which shows the modification which provided the neck in the outer lead part. It is a figure which shows the aspect after cut | disconnecting an outer lead part in the neck part.

DESCRIPTION OF SYMBOLS 1 1st lead | read | reed 1a mounting part 1b 1st lead | read | reed part 3 Resin part 4 Submount 5 Semiconductor laser chip 6 Tie bar 6a, 6b Tie bar part 40 Semiconductor laser apparatus 50 Optical pick-up apparatus

Claims (9)

A first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending continuously from the mounting portion;
A second lead extending along the lead portion of the first lead;
A holding portion made of an insulating material that holds the first lead and the second lead together;
The first lead, with the rear surface of the mounting portion is exposed from the holding portion along the back surface of the mounting portion have a tie bar portion protruding from the mounting portion,
The first lead is composed of a deformed frame partially different in thickness,
The thickness of the lead portion of the first lead is greater than the thickness of the mounting portion so as to reduce the height difference between the upper surface of the semiconductor laser chip and the upper surface of the lead portion of the first lead. And
A semiconductor laser device, wherein an upper surface of the semiconductor laser chip and an upper surface of a lead portion of the first lead are connected by a wire . The semiconductor laser device according to claim 1,
The semiconductor laser device according to claim 1, wherein the tie bar portion projects in a direction perpendicular to the optical axis of the semiconductor laser chip. The semiconductor laser device according to claim 1,
The semiconductor laser device according to claim 1, wherein a tip of the tie bar portion in a protruding direction is located farther from the semiconductor laser chip than an arbitrary portion of the mounting portion. The semiconductor laser device according to claim 1,
The width of the tie bar portion is the same as or larger than the width of the semiconductor laser chip. The semiconductor laser device according to claim 1,
2. The semiconductor laser device according to claim 1, wherein the second lead has a retaining portion for restricting movement of the second lead with respect to the holding portion. The semiconductor laser device according to claim 1,
The first lead has a recess recessed at the front edge of the mounting portion so as to indicate the mounting position of the semiconductor laser chip,
The semiconductor laser device according to claim 1, wherein an inner edge of the recess corresponding to immediately before the semiconductor laser chip is inclined with respect to an optical axis of the semiconductor laser chip. The semiconductor laser device according to claim 1,
A through hole is provided in a region other than the region where the semiconductor laser chip is mounted in the mounting portion of the first lead.
The back surface of the mounting part is provided with a recess surrounding the through hole and surrounding the through hole,
The semiconductor laser device, wherein the material of the holding part fills the depression from the surface side of the mounting part through the through hole. The semiconductor laser device according to claim 1,
A cut-and-raised portion is provided in a region other than the region where the semiconductor laser chip is mounted in the mounting portion of the first lead so as to form a through hole passing through the front and back of the mounting portion,
The semiconductor laser device, wherein the material of the holding part fills the space behind the cut and raised part from the surface side of the mounting part through the through hole. A housing,
2. An optical pickup device, wherein the semiconductor laser device according to claim 1 is mounted in such a manner that a mounting portion and a tie bar portion of the first lead are in contact with the housing.

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