JP2001308437A - Semiconductor laser device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is miniaturized and lightened, whose cost is reduced and whose heat radiating property is improved, and to provide the manufacturing method. SOLUTION: A light receiving element 9 is arranged on a support member 1 and a semiconductor laser element 14 is arranged on the light receiving element 9. A plurality of terminals 31, 32 and 33 are arranged on the surface of the support member 1 in parallel so that they confront each other by leaving a prescribed interval. A plurality of terminals 31, 32 and 33 are electrically connected to the semiconductor laser element 14 and the light receiving element 9. A frame body 20 whose plane is in a U shape is formed on the periphery of the semiconductor laser element 1 so that the support member 1 and a plurality of terminals 31, 32 and 33 are integrated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser device having a semiconductor laser device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, along with the demand for smaller and lighter optical pickup devices and lower cost, semiconductor laser devices used as light sources have been reduced in size and cost. For example, a semiconductor laser device using a package composed of a lead frame and a resin mold instead of a conventional round can (can) package has been developed. Such a semiconductor laser device is disclosed in, for example, JP-A-6-45709.
No. 6,086,045.

FIG. 6 is a top view of the semiconductor laser device disclosed in the above publication, and FIG.
8 is a cross-sectional view of the semiconductor laser device of FIG. 6 taken along the line BB.

[0006] In the semiconductor laser device 52 of FIGS. 6 to 8, a light receiving element 59 is mounted on a lead 51, and a semiconductor laser element 64 is mounted on the light receiving element 59.

The lead 51 has a thickness of 0.2 mm to 1.0 mm.
mm, made of a metal material such as copper, iron, or aluminum, and includes a rectangular portion 53 and a terminal portion 54. A concave portion 56 formed of a V-shaped groove is formed on the end face 55 of the lead 51. Other leads 57 and 58 are arranged in parallel with the terminal portion 54 of the lead 51. Other leads 57,5
8 is also made of a metal material such as copper, and is provided at a position facing away from the lead 51.

The light receiving element 59 is made of, for example, a silicon-based crystal having a PIN structure and has a P-type diffusion region (light receiving surface) 63. The silicon-based crystal is provided with front electrodes 60 and 61 and a back electrode 62,
1 is in ohmic contact with the P-type diffusion region 63,
2 is fixed on the lead 51 via a conductive adhesive such as a silver paste.

The semiconductor laser device 64 is, for example, a GaAs having a planar active layer and a cladding layer sandwiching the active layer.
It has an As light emitting layer. Both ends of the semiconductor laser element 64 are cleaved, and a reflection film is formed on the cleaved surface. Thereby, one end face (front face) of the semiconductor laser element 64
Becomes an emission surface 65 for emitting a laser beam. A laser beam for monitoring is emitted from the other end surface (rear surface) of the semiconductor laser element 64.

[0008] The semiconductor laser element 64 is arranged such that the light emitting surface 65 is located near the end face 55 of the lead 51.
9 is fixed on the surface electrode 60 via silver paste or solder. The terminal portion 54 of the lead 51 extends in the direction opposite to the light emission direction of the semiconductor laser device 64.

A light-transmitting resin 69 is formed so as to integrally cover the P-type diffusion region 63 of the light-receiving element 59 from near the rear surface of the semiconductor laser element 64. The translucent resin 69 is made of, for example, an epoxy resin. Thus, the translucent resin 69
, Light emitted from the rear surface of the semiconductor laser element 64 is reflected at the interface between the translucent resin 69 and the atmosphere, and P
It surely enters the mold diffusion region 63. Thereby, the amount of received light increases, so that the sensitivity of the light receiving element 59 improves.

An insulating film 70 is formed around the leads 51. The insulating film 70 is made of, for example, a polycarbonate resin or an epoxy resin, or the like.
Are formed in a substantially U-shape in a plane such that the light exit surface 65 is exposed, and is formed by transfer molding so as to sandwich the upper and lower surfaces of the leads 51, 57, 58. Lead 5
The side plate portions 53 are formed by projecting the both side portions of 1 from outside the insulating film 70.

A thin metal wire 66 is arranged so as to electrically connect between the surface electrode 60 and the lead 51, and electrically connects between the surface electrode of the semiconductor laser element 64 and another lead 57. A thin metal wire 67 is wired and the surface electrode 6
A thin metal wire 68 is wired so as to electrically connect between 1 and another lead 58.

In order to attach the semiconductor laser device 52 to the optical pickup device, a support 72 shown by a chain line is required.
Is used. The support member 72 is formed with a convex portion 77 corresponding to the concave portion 56 of the end surface 55 of the lead 51. Support 7
The semiconductor laser device 52 is fixed to the support member 72 such that the second convex portion 77 and the concave portion 56 of the lead 51 are fitted. The support member 72 is made of an aluminum alloy or the like, and heat generated in the semiconductor laser element 64 is released from the support portion 72 through the leads 51 and the side plate portions 53 protruding outside the insulating film 70.

[0013]

The production of the leads 51, 57, 58 of such a conventional semiconductor laser device 52 is as follows.
This is performed by patterning one metal plate by an etching method or a mold pressing method to form a frame in which the leads 51, 57, 58 are integrally connected.

However, in general, in the etching method, the etching proceeds in the direction perpendicular to the surface of the metal plate (thickness direction) as well as in the horizontal direction, so that the etching region becomes wider than the mask pattern region. for that reason,
The minimum width of the removed area of the metal plate cannot be smaller than the thickness of the metal plate.

In the metal pressing method, when forming an elongated lead-like pattern, if the minimum width of the lead, which is a portion left by the metal plate, is smaller than the thickness of the metal plate,
The lead is twisted at the time of pressing, which causes a problem in a post-process such as resin molding or mounting of a thin metal wire. for that reason,
The minimum width of the lead, which is a portion left by the metal plate, cannot be smaller than the thickness of the metal plate.

As a result, the leads 51, 57, 58 for electrically separating the leads 51, 57, 58 from each other.
The spacing between them cannot be smaller than the thickness of each of the leads 51, 57, 58.

In general, in a semiconductor laser device, it is important to efficiently release heat generated by the semiconductor laser element to the outside in order to ensure reliability. In particular, a semiconductor laser device that generates red light (hereinafter, referred to as a red semiconductor laser device) has a low thermal conductivity, and a semiconductor laser device for high-power use (hereinafter, referred to as a high-power semiconductor laser device) generates a large amount of heat. .

Therefore, when using a red semiconductor laser device or a high-power semiconductor laser device, the semiconductor laser device needs to have a structure with high heat radiation efficiency. As one of the structures, increasing the thickness of the lead to which the semiconductor laser element is attached is effective to enhance the heat radiation effect. In this case, increasing the thickness of the lead increases the cross-sectional area of the lead. As a result, the thermal resistance of the lead is reduced, and the heat is easily released to the outside.

On the other hand, the market demands miniaturization of semiconductor laser devices. To increase the heat radiation efficiency, it is necessary to use thick leads as described above. However, both the intervals between the leads and the width of the leads increase, and the lateral width of the semiconductor laser device increases.

For this reason, in consideration of the temperature characteristics of the semiconductor laser device and the above-mentioned restrictions on the width, the CD (Compact Discharge) is used.
c; for compact disc) drive or CD-RO
As a read-only semiconductor laser device for an M (Compact Disc-Read Only Memory) drive, only a semiconductor laser device using a lead having a thickness of 0.3 to 0.4 mm has been put to practical use.

In recent years, in an optical disk device using a semiconductor laser device, not only reproduction of a CD or CD-ROM, but also CD-R (Compact Disc-Recordable),
The demand for optical disk devices for recordable optical disks such as CD-RWs (Compact Disc-Rewritable) has been increasing, and accordingly, semiconductor laser devices using high-power semiconductor laser elements have been required. DVD (Digital Vers
With the advent of atile discs and the like, demand for semiconductor laser devices using red semiconductor laser elements has been increasing.

In a semiconductor laser device using such a high-power semiconductor laser device or a red semiconductor laser device, since the heat generated by the semiconductor laser device is large, a sufficient heat radiation effect can be obtained with the above-described conventional frame structure. Therefore, it is difficult to reduce the size and weight and reduce the cost by using a frame.

An object of the present invention is to provide a semiconductor laser device which is reduced in size and weight, reduced in cost and improved in heat dissipation, and a method of manufacturing the same.

[0024]

A semiconductor laser device according to the present invention has a plate-like support member having a main surface, and a semiconductor laser which is disposed on the main surface of the support member and emits laser light. The element and the support member are formed separately,
One or more first terminals arranged substantially parallel to the main surface of the support member and electrically connected to the semiconductor laser device, and the support member and the first terminal are provided so as to be integrated. A first terminal having a thickness smaller than that of the support member.

In the semiconductor laser device according to the present invention, heat generated in the semiconductor laser element is released to the outside through the support member. In particular, the first terminal electrically connected to the semiconductor laser element is formed separately from the support member and has a smaller thickness than the support member. for that reason,
The width of the first terminal can be reduced while ensuring the heat dissipation of the support member. Therefore, the width of the semiconductor laser device can be reduced in the width direction of the first terminal. As a result, reduction in size and weight, reduction in cost, and improvement in heat dissipation are achieved.

The first terminal may be arranged so as to face the main surface of the support member at an interval. In this case, the area of the support member can be secured while preventing an electrical short circuit between the support member and the first terminal. Therefore, heat dissipation is further improved.

[0027] The support member may have a notch, and the first terminal may be arranged in a region of the notch of the support member. In this case, an electrical short circuit between the first terminal and the support member can be prevented without separating the first terminal from the support member in the thickness direction. Thus, the thickness of the semiconductor laser device can be reduced.

The frame may be provided such that the back surface opposite to the main surface of the support member is exposed. In this case, the heat generated in the semiconductor laser element is also radiated to the outside from the back surface of the support member, so that the heat dissipation is further improved.

[0029] The support member may have a hole, and the hole may be filled with a material constituting the frame to be integrated with the frame. In this case, the material forming the frame is filled in the hole of the support member, thereby preventing the frame from detaching from the support member.

It is preferable that the thermal conductivity of the material forming the support member is equal to or higher than the thermal conductivity of the material forming the first terminal. Thereby, the heat dissipation of the support member is enhanced.

The hardness of the material forming the first terminal is preferably higher than the hardness of the material forming the support member.
In that case, the thickness of the first terminal can be reduced while maintaining the strength of the first terminal. Thus, the width of the first terminal can be further reduced, and the size of the semiconductor laser device can be further reduced in the width direction of the first terminal.

A light receiving element disposed on the support member and a second terminal formed separately from the support member, disposed substantially parallel to the main surface of the support member, and electrically connected to the light receiving element. And the second terminal has a smaller thickness than the support member, and the frame may be provided so as to integrate the support member, the first terminal, and the second terminal.

In this case, the second terminal electrically connected to the light receiving element is formed separately from the support member and has a smaller thickness than the support member. This makes it possible to reduce the width of the second terminal while securing the heat radiation of the support member, and also to reduce the distance between the first terminal and the second terminal. Therefore, the first terminal and the second terminal
The width of the semiconductor laser device in the width direction of the terminal can be further reduced. Therefore, reduction in size and weight, reduction in cost, and improvement in heat dissipation can be achieved.

The frame surrounds the periphery of the semiconductor laser device except for the light emitting surface of the semiconductor laser device, and is provided so that a part of the first terminal is exposed inside and another part is exposed outside. You may be. This prevents a finger or the like from contacting the semiconductor laser element during assembly and facilitates wiring to the first terminal.

The support member may have protrusions protruding from the frame on both sides with respect to the light emitting direction of the semiconductor laser device. In this case, the heat generated in the semiconductor laser element is transmitted to the supporting member, and is released to the outside from a protruding portion protruding from the frame. Therefore, heat dissipation is further improved.

In the method of manufacturing a semiconductor laser device according to the present invention, a step of forming a first frame member in which a plurality of plate-shaped support members having a main surface are connected to a first frame; Forming a second frame member in which a plurality of terminals each having a thickness smaller than the member and respectively corresponding to the plurality of support members are connected to the second frame, and corresponding to a predetermined position of each support member; Superimposing the second frame member on the first frame member so that the terminals are located; and integrating each support member of the first frame member with the corresponding terminal of the second frame member. A step of forming a plurality of frames, a step of arranging the semiconductor laser elements on the plurality of support members, and a step of forming the plurality of semiconductor laser elements before or after arranging the plurality of semiconductor laser elements, respectively. A plurality of support members and a plurality of terminals which are those in which a step of disconnecting the first and second frames.

According to the method of manufacturing a semiconductor laser device according to the present invention, each of the support members of the first frame member and the second frame member are placed in a state where the first frame member and the second frame member are overlapped. A plurality of frames are formed such that the corresponding terminals are integrated. After that, the semiconductor laser devices are respectively arranged on the plurality of support members. The plurality of support members and the plurality of terminals respectively integrated by the plurality of frames before or after the arrangement of the plurality of semiconductor laser elements are separated from the first frame and the second frame. Thereby, a plurality of semiconductor laser devices are manufactured.

In the semiconductor laser device manufactured as described above, heat generated in the semiconductor laser element is released to the outside through the support member. In particular, the terminal is formed separately from the support member and has a smaller thickness than the support member. Therefore, the width of the terminal can be reduced while ensuring the heat radiation of the support member. Therefore, the width of the semiconductor laser device can be reduced in the width direction of the terminal. As a result, reduction in size and weight, reduction in cost, and improvement in heat dissipation are achieved.

The step of forming the second frame member includes bending the plurality of terminals with respect to the second frame so that the plurality of terminals are located at different heights in the thickness direction from the second frame. May be included.

In this case, when the second frame member is overlaid on the first frame member, the terminals are arranged so as to face the surface of the support member at intervals. Therefore, heat dissipation can be further improved by securing the area of the support member while easily preventing an electrical short circuit between the support member and the terminal.

[0041]

FIG. 1 is a view showing a semiconductor laser device according to a first embodiment of the present invention, in which (a) is a top view, (b) is a front view, (c) is a rear view, (D) is a side view.

In FIG. 1, the semiconductor laser device 2 has a flat supporting member 1. The light receiving element 9 is mounted on the support member 1 so as to be located near the one end face 5, and the semiconductor laser element 14 is mounted on the light receiving element 9.

The support member 1 has a thickness of 0.5 mm to 3.0 mm.
mm of a conductive material. As a material of the support member 1, it is preferable to use a material having higher thermal conductivity,
In this embodiment, a material having the same thermal conductivity as the material of the terminals 31, 32, and 33 or having a higher thermal conductivity than the terminals 31, 32, and 33 is used. Thereby, heat dissipation can be further improved. For example, as the material of the support member 1, a metal material having high thermal conductivity, such as copper, iron, and phosphor bronze, is used. Among them, it is preferable to use copper having the highest thermal conductivity.

A concave portion (notch portion) 23 is provided on the other end surface side of the support member 1. In the region of the concave portion 23 of the support member 1, a plurality of rod-shaped terminals 31 and 3 are used as leads.
2, 33 are arranged at predetermined intervals in parallel and parallel to each other. The terminal 31 is used for supplying power to the semiconductor laser element 14, the terminal 33 is used for extracting a signal from the light receiving element 9, and the terminal 32 is used for the semiconductor laser element 14.
And the light receiving element 9 (commonly used for grounding). In the present embodiment, as shown in FIG.
The lower surfaces 24, 25, 26 of 32, 33 and the upper surface 34 of the support member 1 are located on the same plane.

Each terminal 31, 32, 33 has a thickness of 0.1
It is made of a conductive material of about mm to 0.4 mm. Terminal 3
It is preferable to use a material having higher hardness as the material of 1, 32, and 33. In the present embodiment, the support member 1
A material having the same hardness as that of the material or a hardness higher than that of the support member 1 is used. Thereby, each terminal 31, 32, 3
3, the thickness and width of each terminal 31, 32, 33 can be reduced. For example, each terminal 3
Metal materials such as iron, copper, and phosphor bronze are used as the materials of 1, 32, and 33. Among these, it is preferable to use iron or phosphor bronze which is inexpensive and has high hardness.

For example, when the thickness of the terminals 31, 32, 33 is 0.4 mm, the width of each of the terminals 31, 32, 33 and the interval between the terminals 31, 32, 33 may be formed to be a minimum of 0.4 mm. it can. Assuming that the gap between the terminals 31, 33 and the side surface of the concave portion 23 of the support member 1 is 0.4 mm, the width of the concave portion 23 is obtained from the total width of the three terminals 31, 32, 33 and the total of the four gaps. Is a minimum of 2.8 mm. Terminal 3
Since the members 1, 32, and 33 are formed separately from the support member 1, even when the thickness of the support member 1 is large, the lateral width of the semiconductor laser device 2 does not increase.

The light receiving element 9 is made of, for example, a silicon-based crystal having a PIN structure and has a P-type diffusion region (light receiving surface).
13. A surface electrode 10 on the surface of the silicon-based crystal;
11 is provided, and a back surface electrode 12 is provided on the back surface. The front surface electrode 11 is in ohmic contact with the P-type diffusion region 13, and the back surface electrode 12 is fixed on the support member 1 via a conductive adhesive such as silver paste.

The semiconductor laser element 14 is, for example, a GaAs having a planar active layer and a cladding layer sandwiching the active layer.
It has a light emitting layer such as lAs, GaAlInP, or GaInN. A light reflecting surface is formed at both ends of the semiconductor laser element 14 by a method such as cleavage, and a reflecting film is formed on the light reflecting surface. Thereby, the semiconductor laser device 1
One end face (front face) of the laser beam 4 becomes an emission face 15 for emitting a laser beam. A laser beam for monitoring is emitted from the other end surface (rear surface) of the semiconductor laser device 14. The terminals 31, 32, and 33 extend in a direction opposite to the light emission direction of the semiconductor laser device.

The surface electrode 3 is formed on the surface of the semiconductor laser element 14.
5 is provided, and a back surface electrode 36 is provided on the back surface.
The back electrode 36 of the semiconductor laser element 14 is fixed on the front electrode 10 of the light receiving element 9 via silver paste or solder so that the emission surface 15 of the semiconductor laser element 14 is located near the end face 5 of the support member 1. ing.

A frame 20 is formed around the semiconductor laser element 14 so as to integrate the support member 1 and the plurality of terminals 31, 32, 33. Both side portions of the support member 1 are side plate portions 3 extending so as to protrude outward from the side surfaces of the frame body 20 and functioning as radiation fins. A substantially semicircular notch 21 for positioning and fixing is formed in each side plate portion 3.

The frame 20 is made of, for example, an insulating epoxy resin or PPS (polyphenylene sulfide; polyphen).
It is made of a resin such as ylene sulfide resin, and has a substantially U-shaped plane so that the emission surface 15 of the semiconductor laser element 14 is exposed. The support member 1 and the terminals 31, 32, 33 sandwich and support the upper and lower surfaces of each of the terminals. Member 1 and terminals 31 and 3
2, 33 are formed integrally. The support member 1 and the frame 20 constitute a package.

A thin metal wire 16 is wired so as to electrically connect between the surface electrode 10 of the light receiving element 9 and the support member 1, and electrically connects between the surface electrode 35 of the semiconductor laser element 14 and the terminal 31. A thin metal wire 17 is wired for connection, a thin metal wire 29 is wired for electrically connecting between the support member 1 and the terminal 32, and an electrical connection is made between the surface electrode 11 of the light receiving element 14 and the terminal 33. The thin metal wires 18 are wired so as to be electrically connected.

From the terminals 31 and 32, the semiconductor laser element 14
When power is supplied through the thin metal wires 16, 17, and 29 to the laser beam, a laser beam is emitted from the emission surface 15, and a laser beam is emitted from the end surface opposite to the emission surface 15. Part of the laser beam emitted from the end face opposite to the emission face 15 enters the P-type diffusion region 13 of the light receiving element 9, and an electric signal corresponding to the amount of incident light is extracted from the surface electrode 11 of the light receiving element 9. The signal is output from the terminal 33 via the thin metal wire 18. The electric power supplied to the semiconductor laser element 14 can be controlled with high precision by calculating this electric signal by an external circuit.

In the semiconductor laser device 2 shown in FIG. 1, the heat generated in the semiconductor laser element 14 is transmitted through the light receiving element 9 and the support member 1 and is released from the side plate 3 to the outside. As described above, heat is efficiently emitted to the outside without staying inside the semiconductor laser device 2, so that reliability is improved.

Further, all the terminals 3 of the semiconductor laser device 2
Since 1, 32 and 33 are arranged in parallel, connection to an external circuit is easy.

Furthermore, since the terminals 31, 32, and 33 are formed separately from the support member 1, the thickness of the terminals 31, 32, and 33 can be reduced while maintaining the heat radiation of the support member 1. Can be. Accordingly, when the terminals 31, 32, and 33 are manufactured by the etching method or the die pressing method,
The spacing between the terminals 31, 32, 33 can be reduced. In this case, the lateral width of the semiconductor laser device 2 can be reduced as compared with the case where the thicknesses of the terminals 31, 32, and 33 are equal to the thickness of the support member 1.

Next, a method of manufacturing the semiconductor laser device 2 shown in FIG. 1 will be described. FIG. 2 shows the semiconductor laser device 2 of FIG.
It is a figure showing the manufacturing method of.

FIG. 2A is a plan view of a support member lead frame 101 provided with a plurality of support members 1, and FIG. 2B is a plan view of a terminal lead frame 301 provided with a plurality of sets of terminals 31, 32, and 33. FIG.

The support member lead frame 10 shown in FIG.
Reference numeral 1 denotes a frame 102 in which a plurality of support members 1 are connected via tie bars (connection bars) 103. The support member lead frame 101 is formed by removing a predetermined region of the metal plate by an etching method or by punching out a predetermined region of the metal plate by using a mold press. Note that the thickness of the support member 1 can be selected according to the heat value of the semiconductor laser element 14.

The terminal lead frame 301 shown in FIG.
Are provided in the frame 302 with a plurality of sets of terminals 31, 32, 33.
Are connected. This terminal lead frame 301
Similarly to the supporting member lead frame 101, the supporting member is formed by removing a predetermined region of the metal plate by an etching method or by punching out a predetermined region of the metal plate by using a mold pressing device. The thickness of the material of the metal plate is selected so that the thickness of the terminal lead frame 301 in FIG. 2B is smaller than the thickness of the support member lead frame 101 in FIG.

As shown in FIG. 2C, the terminal lead frame 30 is placed at a predetermined position on the support member lead frame 101.
The terminals 1, 32, and 33 of each set are arranged on the region of the concave portion 23 of the support member 1 so as not to come into contact with each support member 1.

Next, the supporting member lead frame 101 and the terminal lead frame 301 which are superimposed on each other are set inside the mold, and as shown in FIG. 2D, each supporting member 1 and each set of terminals 31, The frame body 20 is formed by resin molding so as to integrate the frames 32 and 33.

Thereafter, the light receiving element 9 and the semiconductor laser element 14 shown in FIG. 1 are mounted on each support member 1, and the thin metal wires 16, 17, 18, and 29 are connected.

Further, as shown in FIG. 2E, a tie bar 10 of each support member 1 is
3 and each set of terminals 31, 32, 33 are cut off, the support member 1 is separated from the frame 102, and the frame 3
Separate the terminals 31, 32, 33 from 02. Thereby, a plurality of semiconductor laser devices 2 are manufactured.

The tie bar 103 and the terminal 3
After cutting 1, 32, and 33, the light receiving element 9 and the semiconductor laser element 14 may be mounted on each support member 1 and the thin metal wires 16, 17, 18, and 29 may be connected.

As described above, the supporting member 1 and the terminals 31, 32, 33 are integrated by forming the frame 20 by resin molding by superposing the supporting member lead frame 101 and the terminal lead frame 301 having different thicknesses. Therefore, while reducing the thickness of the terminals 31, 32, 33,
The thickness of the support member 1 that requires a heat radiation effect can be increased. Therefore, the heat radiation effect by the support member 1 is improved. Also, by reducing the thickness of the terminals 31, 32, 33, the width of the terminals 31, 32, 33 and the terminals 31, 3
The interval between 2 and 33 can be reduced. Therefore, the size and weight of the semiconductor laser device 2 can be reduced.

Further, since the recess 23 is formed in each support member 1, when the support member lead frame 101 and the terminal lead frame 301 are overlapped, the support member 1
And the terminals 31, 32, 33 do not contact. Therefore, the semiconductor laser device 2 can be easily manufactured by simply overlapping the support member lead frame 101 and the terminal lead frame 301 and forming the frame body 20 by resin molding.

In the semiconductor laser device 2 of FIG. 1 manufactured by the above-described manufacturing method, heat generated in the semiconductor laser element 14 serving as a light source is efficiently transferred to the outside without increasing the overall width of the semiconductor laser device 2. Can be released. Therefore, even when a semiconductor laser element having a large heat value such as a red semiconductor laser element or a high-power semiconductor laser element is used as the semiconductor laser element 14, the lead frame structure can be adopted, and the size, weight and cost can be reduced. It becomes possible.

In this embodiment, the terminals 31, 3
2, 33, lower surface 24, 25, 26 and support member 1 upper surface 3
4 are located on the same plane, but terminals 31, 32,
A part or the whole of 33 may be located in the concave portion 23 of the support member 1. In this case, when the terminal lead frame 301 is overlaid on the support member lead frame 101 in the step of FIG.
The terminals 31, 32, and 33 of the terminal lead frame 301 are bent in advance with respect to the frame 302 so that the terminals 32 and 33 are located in the concave portions 23 of the support member 1 of the support member lead frame 101.

FIG. 3 is a diagram showing a semiconductor laser device according to a second embodiment of the present invention, wherein FIG.
(B) is a front view, (c) is a rear view, and (d) is a side view.

The semiconductor laser device 2a of FIG. 3 differs from the semiconductor laser device 2 of FIG. 1 in the following points. In the semiconductor laser device 2a of FIG. 3, the support member 1 is not provided with the concave portion 23 of the support member 1 of FIG. Terminal 3
1, 32, 33 are provided on the upper surface 3 of the support member 1 on the support member 1.
4 are arranged in parallel with each other. Terminals 31, 32, 3
The lower surfaces 24, 25, and 26 of the support member 3 and the upper surface 34 of the support member 1 face each other at a predetermined interval.

Next, a method of manufacturing the semiconductor laser device 2a shown in FIG. 3 will be described. FIG. 4 is a sectional view showing a method for manufacturing the semiconductor laser device 2a of FIG.

FIG. 4A is a sectional view of a support member lead frame 101a provided with a plurality of support members 1, and FIG. 4B is a sectional view of a terminal lead frame 301a provided with a plurality of sets of terminals 31, 32, and 33. FIG. FIG. 4B shows only the terminal 32.

The support member lead frame 10 shown in FIG.
2A, a plurality of support members 1 are connected via a tie bar 103 in a frame 102, similarly to the support member lead frame 101 of FIG. However, FIG.
The supporting member 1 of the supporting member lead frame 101a is not provided with the concave portion 23 shown in FIG. The method for forming the support member lead frame 101a is the same as the method for forming the support member lead frame 101 in FIG.

The terminal lead frame 301a shown in FIG.
Is similar to the terminal lead frame 301 in FIG.
A plurality of sets of terminals 31, 32, 33 are connected in a frame 302. However, in the terminal lead frame 301a of FIG. 4B, the terminals 31, 32, and 33 are bent with respect to the frame 302 so that the terminals 31, 32, and 33 are located at different heights from the frame 302 in the thickness direction. are doing.

The terminal lead frame 301a is formed by punching out a predetermined area of a metal plate using a die pressing device and simultaneously bending the terminals 31, 32, and 33 with respect to the frame 302. In this case, a mold is used in which the terminals 31, 32, and 33 are bent with respect to the frame 302 during pressing. Further, the thickness of the material of the metal plate is selected so that the thickness of the terminal lead frame 301a in FIG. 4B is smaller than the thickness of the support member lead frame 101a in FIG. 4A.

As shown in FIG. 4C, the terminal lead frame 3 is positioned at a predetermined position on the support member lead frame 101a.
01a are overlapped, and the terminals 31, 32, 33 of each set are arranged on the support member 1. In this case, the terminals 31, 32, 3
3 are bent, so that these terminals 31, 32, 33
Faces the support member 1 at a predetermined interval. Subsequent steps are the same as the steps shown in FIGS.

Instead of using the support member lead frame 101a and the terminal lead frame 301a shown in FIG. 4, the support member lead frame 101 and the terminal lead frame 301 shown in FIG. 2 may be used. In this case, in the step of FIG.
2 and the terminal lead frame 301 are separated from each other by using a spacer or a jig or the like, and are overlapped with each other.
In the step (d), the frame 20 is formed by resin molding.

In the semiconductor laser device 2a shown in FIG.
Since there is no need to provide the support member 1 with the concave portion 23 for preventing an electrical short circuit with the terminals 31, 32, 33, the area of the support member 1 to which the heat generated in the semiconductor laser element 14 is transmitted can be increased. . Therefore, a higher heat radiation effect can be obtained as compared with the semiconductor laser device 2 of the first embodiment.

In this embodiment, the terminals 31, 32, 33
When the height of the upper surface of the semiconductor laser device 14 is approximately equal to the height of the surface electrode 35 of the semiconductor laser device 14, the wiring becomes easier.

FIG. 5 is a view showing a semiconductor laser device according to a third embodiment of the present invention, wherein FIG.
(B) is a front view, (c) is a rear view, and (d) is a side view.

The semiconductor laser device 2b of FIG. 5 differs from the semiconductor laser device 2 of FIG. 1 in the following points. In the semiconductor laser device 2b of FIG. 5, the support member 1 is exposed along the lower surface of the frame 20. Further, the support member 1 is provided with a conical round hole 28 whose diameter gradually decreases upward from the lower surface. The inside of the round hole 28 is filled with a resin during the resin molding of the frame 20, and is integrated with the frame 20. This prevents the support member 1 from detaching from the lower surface of the frame 20.

In the semiconductor laser device 2b shown in FIG.
Since heat can be radiated to the outside from both the side plate portion 3 and the lower surface of the support member 1, a higher heat radiation effect can be obtained.

In the semiconductor laser device 2b shown in FIG.
Similar to the semiconductor laser device 2a in FIG. 3, the support member 1 and the terminals 31, 32, and 33 may be arranged separately on different planes. In this case, the terminals 31 and 3 are attached to the support member 1.
There is no need to provide a recess 23 for preventing an electrical short circuit with the second and the third. Thus, the area to which the heat generated in the semiconductor laser device 14 is transmitted can be increased. Therefore, a higher heat radiation effect can be obtained.

In the first to third embodiments,
A semiconductor laser element 1 for the semiconductor laser devices 2, 2a and 2b;
Although the description has been given of the case where three terminals, ie, a terminal 31 for supplying power to the power supply 4, a common terminal 32, and a terminal 33 for extracting a signal from the light receiving element 9 are provided, one or two terminals may be provided depending on the application of the semiconductor laser device. May be provided. In this case, the support member 1 also serves as a common terminal, or signal extraction from the light receiving element 9 is omitted.

Further, when many electric wires are required, for example, when two or more semiconductor laser devices are arranged on the support member 1, four or more terminals are provided. In such a case, the same effects as those of the first to third embodiments can be obtained.

In the first to third embodiments, the surface electrode 10 of the light receiving element 9 may be electrically connected directly to the terminal 32 by a thin metal wire. In this case, the support member 1 can be formed of a conductive material having low conductivity or an insulating material.

Furthermore, in the first to third embodiments, the support member 1 is provided with the notch 21 for positioning and fixing, but the notch 21 may not be provided.
In that case, the semiconductor laser device is fixed in the optical pickup device using a leaf spring or the like.

Also in the first to third embodiments, the light transmitting resin 69 shown in FIGS. 6 to 8 may be provided on the rear surface side of the semiconductor laser element 14.

[Brief description of the drawings]

FIG. 1 is a top view, a front view, a rear view, and a side view of a semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a plan view illustrating a method for manufacturing the semiconductor laser device of FIG.

FIG. 3 is a top view, a front view, a rear view, and a side view of a semiconductor laser device according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a method for manufacturing the semiconductor laser device of FIG. 3;

FIG. 5 is a top view, a front view, a rear view, and a side view of a semiconductor laser device according to a third embodiment of the present invention.

FIG. 6 is a top view of a conventional semiconductor laser device.

FIG. 7 is a sectional view taken along line AA of the semiconductor laser device of FIG. 6;

FIG. 8 is a sectional view taken along line BB of the semiconductor laser device of FIG. 6;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Support member 2, 2a, 2b Semiconductor laser device 3 Side plate part 9 Light receiving element 14 Semiconductor laser element 20 Frame 23 Depression 28 Round hole 31, 32, 33 Terminal 101 Support member lead frame 102, 302 Frame 103 Tie bar 301 Terminal lead frame

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yasuhiko Nomura 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Masayuki Shono 2-chome, Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Inventor Minoru Sawada 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term in Sanyo Electric Co., Ltd. 5F073 BA04 CA05 CB02 EA28 FA02 FA23 FA27 FA28

Claims (12)

[Claims] A plate-shaped support member having a main surface; a semiconductor laser device that is disposed on the main surface of the support member and emits a laser beam; and the support member is formed separately. One or more first terminals arranged substantially parallel to the main surface of the support member and electrically connected to the semiconductor laser element; and the support member and the first terminal are integrated. Wherein the first terminal has a smaller thickness than the support member. 2. The semiconductor laser device according to claim 1, wherein said first terminal is disposed so as to face said main surface of said support member at a distance. 3. The semiconductor laser device according to claim 1, wherein said support member has a notch, and said first terminal is arranged in a region of said notch of said support member. 4. The semiconductor laser device according to claim 1, wherein said frame is provided such that a back surface of said support member opposite to said main surface is exposed. 5. The frame according to claim 1, wherein the support member has a hole, and the hole is filled with a material forming the frame, and is integrated with the frame. A semiconductor laser device according to any one of the above. 6. The thermal conductivity of a material forming the support member is equal to or higher than a thermal conductivity of a material forming the first terminal. Semiconductor laser device. 7. The semiconductor laser device according to claim 1, wherein a hardness of a material forming the first terminal is higher than a hardness of a material forming the support member. 8. A light-receiving element disposed on the support member, and formed separately from the support member, disposed substantially parallel to the main surface of the support member, and electrically connected to the light-receiving element. A second terminal to be connected, wherein the second terminal has a smaller thickness than the support member, and the frame body includes the support member, the first terminal, and the second terminal. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is provided so as to be integrated. 9. The frame body surrounds the periphery of the semiconductor laser device except for the light emitting surface of the semiconductor laser device, and a part of the first terminal is exposed inside and another part is outside. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is provided so as to be exposed to light. 10. The semiconductor laser device according to claim 9, wherein said support member has a protrusion protruding from said frame body on both sides in a light emitting direction of said semiconductor laser element. 11. A step of forming a first frame member in which a plurality of plate-shaped support members having a main surface are connected to a first frame, wherein the first frame member has a smaller thickness than the plurality of support members. Forming a second frame member in which a plurality of terminals respectively corresponding to the plurality of support members are connected to a second frame; and forming the second frame member such that the terminal corresponding to a predetermined position of each support member is located. Superimposing the second frame member on one frame member; and a plurality of frame members for integrating each support member of the first frame member with a corresponding terminal of the second frame member. Forming a plurality of semiconductor laser elements on the plurality of support members; and integrating the plurality of semiconductor laser elements by the plurality of frames before or after the plurality of semiconductor laser elements are arranged. The method of manufacturing a semiconductor laser device characterized by comprising the step of separating the plurality of supporting members and said plurality of terminals from said first frame and said second frame. 12. The step of forming the second frame member includes the step of: connecting the plurality of terminals to the second frame so that the plurality of terminals are located at a different height from the second frame in a thickness direction. The method of manufacturing a semiconductor laser device according to claim 11, further comprising bending the semiconductor laser device.