US20050275841A1 - Alignment marker and lithographic apparatus and device manufacturing method using the same - Google Patents

Alignment marker and lithographic apparatus and device manufacturing method using the same Download PDF

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US20050275841A1
US20050275841A1 US10/863,806 US86380604A US2005275841A1 US 20050275841 A1 US20050275841 A1 US 20050275841A1 US 86380604 A US86380604 A US 86380604A US 2005275841 A1 US2005275841 A1 US 2005275841A1
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Prior art keywords
radiation
alignment
alignment marker
marker
light beam
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US10/863,806
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English (en)
Inventor
Gert-Jan Heerens
Anastasius Bruinsma
Jacob Klinkhamer
Bastiaan Lambertus Marinus Van De Ven
Hubert Van Mierlo
Willem Vliegenthart
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ASML Netherlands BV
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ASML Netherlands BV
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Priority to US10/863,806 priority Critical patent/US20050275841A1/en
Assigned to ASML NETHERLANDS B.V. reassignment ASML NETHERLANDS B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BRUINSMA, ANASTASIUS JACOBUS ANICETUS, VAN DE VEN, BASTIAAN LAMBERTUS WILHELMUS MARINUS, KLINKHAMER, JACOB FREDRIK FRISO, VAN MIERLO, HUBERT ADRIAAN, VLIEGENTHART, WILLEM, HEERENS, GERT-JAN
Priority to US11/147,114 priority patent/US7781237B2/en
Priority to JP2005168398A priority patent/JP4474332B2/ja
Publication of US20050275841A1 publication Critical patent/US20050275841A1/en
Priority to JP2009186649A priority patent/JP5155264B2/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Definitions

  • the present invention relates to lithographic apparatus and methods.
  • a lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate.
  • Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning structure such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of, one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist).
  • a single substrate will contain a network of adjacent target portions that are successively exposed.
  • lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at once, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
  • UV radiation e.g. having a wavelength of 365, 248, 193, 157 or 126 nm
  • EUV extreme ultra-violet
  • particle beams such as ion beams or electron beams.
  • projection system used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate, for example, for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” in such context herein may be considered as synonymous with the more general term “projection system”.
  • the illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
  • patterning structure used herein should be broadly interpreted as referring to a structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • a patterning structure may be transmissive or reflective. However, beneath a certain wavelength the use of a transmissive patterning structure is no longer possible due to the lack of suitable materials that transmit illumination of that particular wavelength. In a lithographic apparatus that applies that kind of illumination, like EUV radiation, the use of a reflective patterning structure is required.
  • a reflective patterning structure includes a substantially flat structure provided with a reflective surface. On the surface of the structure a radiation-absorbing layer is deposited and consecutively patterned.
  • the radiation-absorbing layer which typically has a thickness of about 50-500 nm, absorbs the illumination. The difference between the reflection coefficients of the reflective surface and the radiation-absorbing layer enables the transfer of the pattern from the patterning structure to the target portion on a substrate.
  • patterning structures include masks and programmable mirror arrays.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions; in this manner, the reflected beam is patterned.
  • a support structure supports, i.e. bares the weight of, the patterning structure. It holds the patterning structure in a way depending on the orientation of the patterning structure, the design of the lithographic apparatus, and other conditions, such as, for example, whether or not the patterning structure is held in a vacuum environment.
  • the support can use mechanical clamping, vacuum, or other clamping techniques, for example, electrostatic clamping under vacuum conditions.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required and which may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure”.
  • lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc.
  • LCDs liquid-crystal displays
  • any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool.
  • the disclosure herein may be applied to such and other substrate processing tools.
  • the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • the lithographic apparatus may also be of a type wherein the substrate is immersed in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate.
  • Immersion liquids may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the first element of the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
  • the position of the patterning structure should be very well-defined.
  • the patterning structure is placed on the support structure, for instance by using a robot arm.
  • pre-alignment the position of the patterning structure with respect to the position of the support structure of the patterning structure is determined. Pre-alignment is most often carried out before the robot arm places the patterning structure on the support structure, because at that stage the position of patterning structure and support structure can relatively easy be adjusted with respect to each other.
  • sensors are generally used to measure alignment markers at the system parts (patterning structure, substrate, support structure, stages etc.), which are aligned by illuminating them in reflection or transmission.
  • a high contrast marker on a reflective patterning structure may be obtained by using the same techniques as used for patterning the patterning structure, i.e. by using an absorbing layer on top of a reflective substrate.
  • different materials may be used to obtain the difference in reflectivity at these smaller wavelengths.
  • both elements may be composed of the same materials.
  • the illumination of the markers, used for pre-alignment purposes should also include a beam having a smaller wavelength.
  • an alignment marker with a light source with a wavelength between 400-1500 nm.
  • a light source for this range of wavelengths can easily be obtained and is generally inexpensive.
  • the contrast of the marker originating from the difference in reflectivity of the materials that are used in a small-wavelength regime (like for instance EUV), deteriorates rapidly with larger wavelengths.
  • the coefficients of reflectivity of the reflective surface and the absorbing layer used in small-wavelength lithography are about the same. Consequently, pre-alignment of a reflective patterning structure with respect to the support structure may be difficult to obtain on the basis of a difference of reflectivity between absorbing layer and reflective substrate using light at larger wavelengths.
  • One embodiment of the invention provides an apparatus including a first support structure configured to support an element including an alignment marker provided with at least one height difference.
  • the apparatus further includes an alignment sensor comprising a light source configured to provide a light beam that illuminates the alignment marker, and at least one detector arranged to receive a rflection of the light beam from the alignment marker and configured to detect the at least one height difference of the alignment marker based on the reflection.
  • Embodiments of the invention also include use of such an apparatus to align the element with respect to the first support structure based on the at least one height difference.
  • an apparatus including a first support structure configured to support an element, the element including an alignment marker provided with at least one height difference.
  • the apparatus also includes an alignment sensor including a light source, the light source being configured to provide a light beam that illuminates the alignment marker; and at least one detector configured to detect the at least one height difference of the alignment marker by analyzing the light beam reflected by the alignment marker in order to allow alignment of the element with respect to the first support structure.
  • the alignment sensor further includes imaging optics configured to control a trajectory and/or a characteristic of reflected light of the light beam impinging on the alignment marker towards the at least one detector.
  • the apparatus is a lithographic apparatus
  • the element is a patterning structure
  • the first support structure is a support structure configured to support the patterning structure.
  • a lithographic apparatus may further include a second support structure configured to support a substrate, an illumination system configured to provide a beam of radiation, the patterning structure serving to receive the beam of radiation and to produce a patterned beam with a pattern in its cross-section, and a projection system configured to project the patterned beam onto a target portion of the substrate.
  • An apparatus is configured to align an element (e.g. a patterning structure) with respect to a support structure on which the element is disposed.
  • Such an apparatus may comprise a light source configured to direct a light beam onto at least one alignment marker arranged on said patterning structure, said light beam having an angle of incidence and a principal angle of reflectance; and a detector configured to receive a reflection of a portion of the light beam by said at least one alignment marker at an angle other than the principal angle of reflectance.
  • Embodiments of the invention also include device manufacturing methods, semiconductor devices manufactured with apparatus and/or methods as disclosed herein, patterning structures and methods of aligning an element as disclosed herein.
  • FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention
  • FIG. 2 depicts a conventional alignment sensor
  • FIGS. 3 a and 3 b show a reflective patterning structure illuminated with different wavelength beams
  • FIG. 4 schematically shows a method for aligning a patterning structure according to an embodiment of the present invention
  • FIG. 5 shows the concept of scattering and diffraction
  • FIG. 6 shows an apparatus configured to align a patterning structure according to an embodiment of the present invention
  • FIGS. 7 a , 7 b schematically illustrate the influence of tilt for a marker in a defocus position
  • FIG. 8 schematically depicts an apparatus configured to align a patterning structure according to an embodiment of the present invention.
  • Embodiments of the invention include an alignment sensor, a lithographic apparatus, and a device manufacturing method using the same.
  • Embodiments of the invention also include a high-contrast marker provided on an element, wherein the contrast may result from the detection of at least one height difference present in the high-contrast marker.
  • FIG. 1 schematically depicts a lithographic apparatus according to an embodiment of the invention.
  • the apparatus includes: an illumination system (illuminator) IL configured to provide a beam PB of radiation (e.g. UV or EUV radiation) and a first support structure (e.g. a mask table) MT configured to support a patterning structure (e.g. a mask) MA and connected to first positioning device PM configured to accurately position the patterning structure with respect to the projection system, (“lens”) item PL.
  • the apparatus further includes a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g.
  • a resist-coated wafer W and connected to a second positioning device PW configured to accurately position the substrate with respect to the projection system (“lens”), item PL, the projection system (e.g. a reflective projection lens) PL being configured to image a pattern imparted to the projection beam PB by a patterning device MA onto a target portion C (e.g. including one or more dies) of the substrate W.
  • the projection system e.g. a reflective projection lens
  • the apparatus is of a reflective type (e.g. employing a reflective mask or a programmable mirror array of a type as referred to above).
  • the apparatus may be of a transmissive type (e.g. employing a transmissive mask).
  • the illuminator IL receives a beam of radiation from a radiation source SO.
  • the source and the lithographic apparatus may be separate entities, for example when the source is a plasma discharge source. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is generally passed from the source SO to the illuminator IL with the aid of a radiation collector including, for example, suitable collecting mirrors and/or a spectral purity filter. In other cases the source may be integral part of the apparatus, for example when the source is a mercury lamp.
  • the source SO and the illuminator IL may be referred to as a radiation system.
  • the illuminator IL may include an adjusting structure configured to adjust the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted.
  • the illuminator provides a conditioned beam of radiation, referred to as the beam of radiation PB, having a desired uniformity and intensity distribution in its cross-section.
  • the beam PB is incident on the mask MA, which is held on the mask table MT. Being reflected by the mask MA, the beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB.
  • the first positioning device PM and position sensor IF 1 can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan.
  • the mask table MT may be connected to a short stroke actuator only, or may be fixed.
  • Mask MA and substrate W may be aligned using mask alignment marks M 1 , M 2 and substrate alignment marks P 1 , P 2 .
  • the lithographic apparatus of the present invention is furthermore provided with at least one pre-alignment sensor.
  • the sensor is used to pre-align components within a few microns to set up the consecutive alignment procedures.
  • pre-alignment procedures There are several possible pre-alignment procedures. Pre-alignment may be performed, for example, while the mask MA is held at a predetermined position, for example, by a robot arm. The position of the robot arm with respect to the support structure MT of the mask MA is known. By measuring the position of the mask MA with respect to the position of the robot arm, a correction system can either adapt the position of the robot arm or the position of the mask table MT, while maintaining the predetermined trajectory of the robot arm towards the mask table MT. Alternatively, the correction system can adapt the trajectory of the robot arm while maintaining the position of mask table MT.
  • a sensor as disclosed herein can also be used in a pre-alignment procedure that differs from the aforementioned one.
  • the description herein primarily considers use in pre-alignment procedures, it will be appreciated that the use of such a sensor in consecutive alignment procedures may also be very useful and is expressly contemplated.
  • FIG. 2 shows a pre-alignment sensor 1 configured for the pre-alignment of a reflective mask MA.
  • a light source 7 projects a light beam 4 on a pre-alignment marker 5 located on a mask MA next to the lithographic pattern 3 to be exposed.
  • an additional pre-alignment marker may be positioned on the mask table MT for pre-alignment purposes.
  • the pre-alignment marker 5 may be one of the alignment markers M 1 and M 2 , used in the alignment procedure, but may also be an additional marker for pre-alignment purposes.
  • the pre-alignment marker 5 will therefore in the rest of this document be referred to as alignment marker 5
  • the pre-alignment sensor 1 will be referred to as alignment sensor 1 .
  • Alignment marker 5 includes absorbing and reflecting parts that form a useful pattern. Part of the projected beam 4 is reflected and detected by at least one detector 9 . An analysis of the detected image reveals what compensation should be applied to position mask MA correctly.
  • the concept of reflection in this document refers to all kind of light that is bounced off the surface as a result of the impingement of light beam 4 . This includes light that is reflected by diffraction, scattering or diffuse reflection.
  • a sensor source 7 generally generates radiation with a wavelength between about 400-1500 nm.
  • each component within the lithographic apparatus of the present invention, including the mask, is optimized for a much smaller wavelength, e.g. corresponding with EUV, that is generated by source SO. Therefore, it may not be practical to use such a sensor source 7 with alignment marker 5 if the latter is made in the same production steps as are used to produce pattern 3 .
  • a reflective mask MA includes a mask substrate 11 with a reflective surface covered with pattern 3 that is designed to be transferred to a target portion of a substrate.
  • the reflective surface which is generally constructed using a multi-layer coating, is drawn as a part of the mask substrate 11 .
  • the pattern 3 may be created by selectively depositing a radiation-absorbing layer 13 on top of the reflective surface, that absorbs the incoming projection beam of radiation 6 to a great extent.
  • a pattern may be made by selectively depositing a radiation-absorbing layer 13 on top of said mask substrate 11 .
  • the thickness of the radiation-absorbing layer 13 generally is about 50-500 nm.
  • the material that is used is known to someone skilled in the art, and may be selected from a group including Cr, TaN, TaSiN, TiN and SiMo. For the sake of simplicity no additional buffer layers are drawn, although they may be present.
  • the buffer layers which are generally used to enable mask patterning and repair, may comprise materials like SiO 2 , Si, SiON, C and Ru.
  • An incoming beam of radiation 6 is partly reflected by the reflective surface of the mask substrate 11 , and partly absorbed by the absorbing layer 13 .
  • the detector 9 detects a difference in reflectivity and the information is then translated in a difference in intensity as a function of position. By comparing the detected values with reference values, the difference between the actual and the desired position of the mask MA may be established.
  • Alignment marker 5 that is located on mask MA may be constructed in the same fashion as a pattern on a mask MA.
  • the absorption of radiation-absorbing layer 13 is wavelength-dependent and as described before, the wavelength ⁇ Sensor of the incoming beam of radiation 4 projected on the alignment marker 5 by the sensor source 7 can be longer than the wavelength ⁇ SO of the beam of radiation 6 .
  • the consequences of the use of the different wavelength is depicted in FIG. 3 b .
  • the radiation-absorbing layer 13 ′ no longer absorbs an incoming beam of radiation 4 .
  • Both the light beamlets projected on the absorbing layer 13 ′ as well as the light beamlets projected on the reflective mask substrate 11 are reflected in a substantially equal fashion. As a result the detector 9 can no longer detect a significant difference in intensity and therefore accurate pre-alignment of the mask MA may become difficult.
  • the detector 9 In order to enable the detector 9 to detect the difference in reflectivity at longer wavelengths, different materials for the absorbing layer 13 ′ at the location of the marker may be used.
  • the different absorbing layer is arranged to absorb the light emitted by the sensor source 7 . Consequently, the detector 9 can again detect a difference in intensity between the two surfaces, and the position of the marker can be established accurately.
  • the processing of the alignment marker 5 could also deteriorate the quality of the mask pattern 3 and vice versa. Therefore, it may be desirable to use a technique other than different radiation-absorbing layers at separate locations on top of the mask substrate 11 .
  • FIG. 4 schematically shows a method to align the patterning structure according to an embodiment of the present invention.
  • the alignment sensor 1 is therefore arranged to determine the position of an alignment marker 5 by detecting height differences instead of differences in reflectivity.
  • the alignment sensor 1 according to an embodiment of the invention also includes imaging optics 8 .
  • the imaging optics 8 is arranged to enable the detector 9 to detect differences in intensity by processing and thereby enhancing an alignment marker image caused by height differences of and/or within the alignment marker 5 .
  • the detector 9 may be any known detector in the art, like a (CCD)-camera, a position-sensitive detector (PSD) or a quad cell.
  • the alignment sensor of the present invention 1 may use a conventional sensor source 7 that generates a light beam with a wavelength in the range of 400-1500 nm, the alignment sensor 1 may be constructed to be not expensive. Note that the alignment marker 5 and the mask pattern 3 are illuminated by different sources, each source generating radiation with a different wavelength. As a result the alignment sensor 1 may be used independently from the illuminator IL of the lithographic apparatus. In an embodiment of the invention, the alignment sensor 1 can be provided within the lithographic apparatus, thus enabling the alignment to be performed in situ.
  • the imaging optics may include elements that enable the use of both bright-field and dark-field illumination.
  • dark-field illumination the fact that height differences lead to sharp edges at the side of patterns is used. Illumination of such a pattern at an oblique angle, leads to scattering of the light at the sharp edges. Consequently, when the imaging optics 8 and the detector 9 are adapted in a suitable fashion, the detector may observe the edges as bright lines in a dark background.
  • the alignment marker 5 may include a single edge, a grating, a grid or any combination of these elements to create any marker shape or pattern that is required.
  • a dense pattern of radiation-absorbing layer lines (a grating) allows the creation of an alignment marker 5 with a large bright area, for example, with a circular shape, utilizing the diffraction at the grating pattern. It will be appreciated that one or more of the diffracted orders may then be used for imaging.
  • Such a grating may include numerous lines with a width of about 1-1000 nm and a height of about 50-500 nm at a periodic distance of several tens of microns.
  • phase-contrast in the image.
  • the imaging optics can be adapted to enable the application of some sort of shearing technique to enhance the phase-contrast, thereby generating a high contrast marker image.
  • a single edge phase step, phase grating or grid can be given any desired shape or pattern in order to create any marker shape or pattern that is required.
  • FIG. 5 schematically shows the concept of scattering/diffraction of light beamlets.
  • a mask is provided with a single structure 15 .
  • the structure 15 is made of the radiation-absorbing material that is also used for the creation of the pattern 3 on the mask MA. Since the sensor source 7 generates a light beam 4 of a wavelength that is not well-absorbed by the radiation-absorbing material, the beamlets falling on the reflective surface of mask substrate 11 of the mask MA reflect equally well as the beamlets falling on the structure 15 including the radiation-absorbing material. However, the beamlet that hits the side of the structure 15 is reflected in an entire different direction; it scatters, as indicated with a fat arrow 16 . By providing a number of structures in a periodic pattern, the beamlets, which scatter on the structures, form a diffraction pattern.
  • the direction (change of direction of arrow) and intensity (solid line becomes dashed line) of scattered or diffracted beamlets can be controlled as depicted in FIG. 6 .
  • the detector 9 of the alignment sensor 1 can therefore be positioned at any suitable position in the lithographic apparatus. Since the structure of the alignment marker 5 and its position on the mask MA is known, the position of the mask MA can be determined.
  • the roughness of a surface can be used for the same purpose, as long as height differences associated with said roughness are large enough.
  • the impinging light beam will in this case reflect in a diffused manner.
  • the alignment marker 5 may then for example be formed by providing a pattern including a combination of at least one surface area with a certain roughness surrounded by a surface area with a different (e.g. smaller) roughness.
  • a marker using a radiation-absorbing layer may fit the aforementioned characteristics.
  • a rough surface can be simulated by providing a number of height differences closely together. The radiation-absorbing layer then again introduces the height differences.
  • FIGS. 7 a , 7 b , and 8 illustrate embodiments of the invention, in which a reflective alignment marker 22 is incorporated for use with a diffractive grating.
  • the alignment marker 22 can be imaged using an alignment sensor 1 as described herein.
  • the alignment marker 22 may be positioned at different distances from the alignment sensor imaging optics 8 and thus may be out of focus. When the alignment marker 22 is at a defocus position, the alignment sensor 1 becomes more sensitive to tilt.
  • the tilt of the beam coming from the alignment marker 22 may be caused by several effects like tilt of the alignment marker 22 , a wavelength shift of the light source 7 , an incorrect grating period of a diffractive grating, a position error of the light source 7 , etc.
  • the sensitivity to tilt may increase dramatically.
  • a slight tilt of the alignment marker 22 may result in a measurement error, especially when the image 24 of the alignment marker 22 is out of focus.
  • FIGS. 7 a and 7 b wherein the imaging optics 8 for simplicity is represented by a single optical element (e.g. lens).
  • the image 24 of the alignment marker 22 is still positioned correctly via diffracted beam 23 at a focal plane 25 of the imaging optics 8 , even though the image 24 of the alignment marker 22 is out of focus, as shown in FIG. 7 a .
  • a slight tilt of the diffracted beam 23 may induce a large error E, as shown in FIG. 7 b .
  • the position of the image 24 of the alignment marker 22 that will be imaged is shifted.
  • the numerical aperture (NA) of the imaging optics 8 is overfilled.
  • the NA of the imaging optics 8 can be decreased, by introducing, for example, a limiting entrance pupil 29 .
  • the divergence of the diffracted beam 23 can be increased, e.g., by tuning the width of the grating or grid features, by varying the grating or grid period along one or more features along the alignment marker 22 , by increasing the number and/or size of the light source 7 , by using a light source 7 with a large bandwidth or by selecting the angle of incidence of the light beams 20 that illuminate the alignment marker 22 and the grating period in such a way that the diffracted beams 23 from individual light sources 7 have a somewhat different angle and/or by several other methods.
  • the use of one or more of aforementioned options may provide the present invention with a diffractive beam 23 with an adequate width and intensity distribution.
  • the imaging optics can enhance the contrast of the marker image. Furthermore it may be configured to enable a flexible placement of the at least one detector within a lithographic apparatus.
  • Applications of embodiments of the invention may include use of the at least one height difference to detect the alignment marker with the at least one detector to enable the determination of the position of the alignment marker when light with a wavelength between about 400-1500 nm is used to impinge on the alignment marker.
  • the patterning structure can be provided with an alignment marker and a pattern, which serves to impart the projection beam with a pattern in its cross-section.
  • both structures can be manufactured simultaneously in the same manufacturing process. Sequential manufacturing of both structures in different processes may create a high risk of misalignment between the two objects. Furthermore the processing of the alignment marker may then deteriorate the quality of the pattern and vice versa.
  • the patterning structure is a reflective patterning structure and the alignment marker is a reflective marker.
  • Such an arrangement may be used to enable the patterning of a beam of radiation with a small wavelength, i.e. smaller than about 200 nm, e.g., EUV-radiation.
  • the reflective marker may include a reflecting surface, upon which in at least one area, a radiation-absorbing layer is deposited, the radiation-absorbing layer introducing at least one height difference and being arranged to absorb radiation with a wavelength corresponding to a wavelength of the projection beam of radiation provided by the illumination system.
  • a radiation-absorbing layer may have thickness of about 50-500 nm, and may include a material selected from the group consisting of Cr, TaN, TaSiN, TiN and SiMo.
  • the imaging optics and the at least one detector are arranged to enable alignment using at least one of diffraction, scattering, diffuse reflection and phase-contrast. These optical phenomena may be used to enhance the contrast of the image of the alignment marker.
  • the alignment marker may include any combination of at least one of one or more elements selected from the group consisting of a single edge marker, a grating, and a grid.
  • the alignment sensor may be independent of the illumination system of the lithographic apparatus.
  • the light beam generated by the light source of the alignment sensor may have a different wavelength than the projection beam of radiation provided by the illumination system. It will be appreciated that embodiments of the invention include applications in which the light beam does not apply an additional dose to the target portion of the substrate (e.g. does not expose a resist layer).
  • the beam of radiation may be EUV radiation, while the light beam may have a wavelength in a range of 400-1500 nm.
  • the alignment sensor may be provided within the lithographic apparatus to enable the alignment to be performed in situ. This measure may be used to enable the operation of the alignment sensor in a vacuum environment.
  • Embodiment of the invention include a semiconductor device manufactured with an apparatus as disclosed herein.
  • a device manufacturing method including providing a substrate; providing a beam of radiation using an illumination system; using patterning structure supported by a support structure to impart the beam of radiation with a pattern in its cross-section; and projecting the patterned beam of radiation onto a target portion of the substrate, wherein prior to the using, the method includes, for the purpose of aligning the patterning structure with respect to the support structure: providing a light beam, impinging the light beam on an alignment marker with at least one height difference on the patterning means and detecting the at least one height difference of the marker with at least one detector.
  • a device manufacturing method including patterning a beam of radiation with a patterning structure according to a desired pattern, the patterning structure being supported by a support structure; and projecting the patterned beam of radiation onto a target portion of a substrate, wherein prior to the patterning, the method includes aligning the patterning structure with respect to the support structure, the aligning including: impinging a light beam on an alignment marker disposed on the patterning structure, the alignment marker including at least one height difference, and detecting the at least one height difference of the marker with at least one detector.
  • a patterning structure including a pattern that is used, upon illumination, to impart a beam of radiation with its cross-section; and an alignment marker; wherein the pattern and the alignment marker are manufactured in parallel using the same manufacturing process.
  • the pattern is illuminated by a projection beam of radiation and the marker is illuminated by a light beam.
  • the wavelengths of the both beams are different.
  • the beam of radiation is EUV radiation and the light beam has a wavelength in a range of about 400-1500 nm.
  • Yet another embodiment of the invention includes a method of aligning an element including an alignment marker provided with at least one height difference, the method including providing a light beam on the alignment marker and producing reflected light coming from the alignment marker, and detecting the at least one height difference of the alignment marker using the reflected light in order to allow the aligning of the element.
  • a method of aligning an element including an alignment marker provided with at least one height difference including: illuminating the alignment marker with a light beam; and detecting the at least one height difference of the alignment marker with the light beam reflected by the alignment marker.
  • the element including the alignment marker can be aligned by using any type of light with a wavelength between 400-1500 nm.
  • an apparatus for aligning a patterning structure with respect to a support structure on which the patterning structure is disposed including: a light source configured to illuminate at least one alignment marker arranged on the patterning structure; and a detector configured to receive light reflected by the at least one alignment marker and to detect height differences within the at least one alignment marker.
  • Embodiments of the invention also include computer programs (e.g. one or more sets or sequences of instructions) to control a lithographic apparatus to perform a method as described herein, and storage media (e.g. disks, semiconductor memory) storing one or more such programs in machine-readable form.
  • computer programs e.g. one or more sets or sequences of instructions
  • storage media e.g. disks, semiconductor memory

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
US10/863,806 2004-06-09 2004-06-09 Alignment marker and lithographic apparatus and device manufacturing method using the same Abandoned US20050275841A1 (en)

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US11/147,114 US7781237B2 (en) 2004-06-09 2005-06-08 Alignment marker and lithographic apparatus and device manufacturing method using the same
JP2005168398A JP4474332B2 (ja) 2004-06-09 2005-06-08 整列マーカ、リソグラフィ装置およびそれを使うデバイス製造方法
JP2009186649A JP5155264B2 (ja) 2004-06-09 2009-08-11 整列マーカ、リソグラフィ装置およびそれを使うデバイス製造方法

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US7781237B2 (en) 2010-08-24
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JP2005354066A (ja) 2005-12-22
JP5155264B2 (ja) 2013-03-06

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