US20030219208A1 - Optical coupling module with self-aligned etched grooves and method for fabricating the same - Google Patents

Optical coupling module with self-aligned etched grooves and method for fabricating the same Download PDF

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Publication number
US20030219208A1
US20030219208A1 US10/243,027 US24302702A US2003219208A1 US 20030219208 A1 US20030219208 A1 US 20030219208A1 US 24302702 A US24302702 A US 24302702A US 2003219208 A1 US2003219208 A1 US 2003219208A1
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Prior art keywords
anisotropically etched
etched groove
optical waveguide
substrate
mask
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US10/243,027
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Young Kwon
Bun-Joong Kim
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Korea Advanced Institute of Science and Technology KAIST
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Korea Advanced Institute of Science and Technology KAIST
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Assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY reassignment KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, BUN-JOONG, KWON, YOUNG SE
Publication of US20030219208A1 publication Critical patent/US20030219208A1/en
Priority to US11/110,100 priority Critical patent/US7184630B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
    • G02B6/3632—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means
    • G02B6/3636—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the mechanical coupling means being grooves
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
    • G02B6/3648—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures
    • G02B6/3652—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures the additional structures being prepositioning mounting areas, allowing only movement in one dimension, e.g. grooves, trenches or vias in the microbench surface, i.e. self aligning supporting carriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
    • G02B6/3684—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier
    • G02B6/3692—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier with surface micromachining involving etching, e.g. wet or dry etching steps

Definitions

  • the present invention relates to an optical coupling module for optically coupling an optical fiber with an optical waveguide, and a method for fabricating the optical coupling module. More particularly, the present invention relates to an optical coupling module, in which a substrate is anisotropically etched to form thereon two self-aligned grooves having different widths, and an optical fiber is then disposed in one of the grooves while an optical waveguide is disposed in the other of the grooves, so that the optical fiber and optical waveguide can be self-aligned with each other, and a method for fabricating the optical coupling module.
  • optical communication for allowing broadband communication in place of conventional copper wire communication.
  • the optical coupling efficiency at optical coupling portions becomes a significant factor for communication quality in view of efficient transmission of signals.
  • an optical coupling circuit with a single-mode optical fiber as media or a conventional optical circuit should have a permissible alignment error of 1 to 2 ⁇ m, a simple and precise assembly technique is required.
  • an active alignment method and a passive alignment method have been generally used.
  • the active alignment method in a state where a light emitting element is driven or an optical signal is applied to an optical fiber, the light emitting element or other optical circuit elements (for example, optical fiber, optical waveguide and light receiving circuit) should be moved in a vertical or horizontal direction until a position where the optical coupling efficiency reaches the maximum value is determined. A relative position corresponding to the determined position is then fixed with an adhesive or the like.
  • the active alignment method the light emitting element should be driven throughout the assembly process. In addition, it takes much time to align the light emitting element to achieve the optimal optical coupling efficiency. Thus, there is a disadvantage in reducing the manufacturing costs.
  • the passive alignment method desired assembly precision can be obtained by mechanically positioning an optical fiber and other optical circuit elements on a precisely manufactured jig. Since the size or distribution of manufacturing errors has not yet been sufficiently reduced, there is a disadvantage in that yield is substantially low. However, it is widely recognized that the passive alignment method is a proper method needed for reducing the manufacturing costs of the optical coupling module. Thus, the passive alignment method is now applied to 155-Mbps class modules.
  • the coupling efficiency thereof depends on surface roughness and dimension precision of an etched groove in which the optical fiber is disposed, and mutual alignment accuracy between the etched groove and a pattern of the optical circuit as well as the dimension error of the optical fiber itself.
  • FIGS. 1 and 2 a to 2 c show the configuration of a conventional optical coupling module, in which FIG. 1 is a perspective view thereof, FIG. 2 a is a plan view thereof, FIG. 2 b is a side view thereof, and FIG. 2 c is a plan view of mask patterns which are aligned with each other.
  • This optical coupling module establishes optical coupling between an optical fiber of an optical communication module and a polymer optical circuit.
  • On a silicon substrate 1 there is formed a V- or U-shaped etched groove 2 , in which the optical fiber is disposed.
  • the polymer optical circuit 5 is fabricated such that a core layer 6 of an optical waveguide can be oppositely aligned with a core 4 of the optical fiber.
  • a portion through which light can be introduced may be fabricated in the optical waveguide, if desired.
  • a groove 7 is fabricated with a saw-cut method.
  • FIG. 2 c is a plan view of a mask having one mask pattern 2 B for forming the etched groove on the silicon substrate 1 and the other mask pattern 6 B for forming the core layer 6 of the optical waveguide, which are aligned with each other.
  • optical axes of the optical fiber and optical waveguide should coincide with each other.
  • the optical coupling efficiency is increased.
  • vertical and horizontal positions of the core 4 of the optical fiber depends on the width and size of the etched groove 2 , which are determined according to the mask pattern 2 B.
  • the conventional optical coupling module has the following problems: That is, since the mask pattern 6 B should be aligned with the etched groove 2 after the etched groove 2 has been first formed on the silicon substrate, or the etched groove 2 should be aligned with the mask pattern 6 B after the mask pattern 6 B has been first formed on the mask, alignment processes should be carried out at least two times. Thus, this makes fabricating processes complex. Further, since the etched groove for disposing the optical fiber and the core layer of the optical waveguide are separately fabricated, errors in alignment thereof in a predetermined horizontal and direction angle, exposure errors due to steps formed in the etched groove, and the like may be generated. Further, any errors due to temperature variation during the fabricating process may be generated.
  • An object of the present invention is to provide an optical coupling module, in which one etched groove for disposition of an optical fiber and another etched groove for mounting of an optical waveguide are anisotropically etched simultaneously with a mask having identical mask patterns which are aligned with each other so that errors due to the mask alignment can be reduced, and a method for fabricating the same.
  • an optical coupling module for optically coupling an optical fiber disposed on one side portion of a substrate with an optical waveguide mounted on the other side portion of the substrate in alignment with the optical fiber, wherein the substrate comprising: a first anisotropically etched groove formed to allow the optical fiber to be disposed therein on the one side portion of the substrate; and a second anisotropically etched groove formed to communicate with the first anisotropically etched groove, to have the same axis as the first anisotropically etched groove, and to guide a core layer of the optical waveguide to a position aligned with the optical fiber.
  • a method of fabricating an optical coupling module for optically coupling an optical fiber disposed on one side portion of a substrate with an optical waveguide mounted on the other side portion of the substrate in alignment with the optical fiber comprising: a first step of forming a mask for anisotropic etching on the substrate; a second step of forming two mask patterns, which are self-aligned to have a common axis and have different widths, on the mask; a third step of forming a first anisotropically etched groove in which the optical fiber is disposed and a second anisotropically etched groove in which the optical waveguide is mounted and which communicates with the first anisotropically etched groove by using the two mask patterns; and a fourth step of mounting the optical waveguide in the second anisotropically etched groove.
  • a method of forming a first broad anisotropically etched groove and a second narrow anisotropically etched groove which communicate with each other by using two mask patterns which are self-aligned to have a common axis on a substrate and have different widths comprising the steps of; forming an mask for anisotropic etching including a compensation pattern in which a -shaped beam having a predetermined width extends by a predetermined length from a start portion of one mask pattern for forming the second anisotropically etched groove to another mask pattern for forming the first etched groove; and anisotropically etching the substrate by using the mask.
  • FIGS. 1 and 2 a to 2 c show the configuration of a conventional optical coupling module, in which FIG. 1 is a perspective view thereof, FIG. 2 a is a plan view thereof, FIG. 2 b is a side view thereof, and FIG. 2 c is a plan view of mask patterns which are aligned with each other;
  • FIGS. 3 a and 3 b are a pattern diagram of a mask for etching, a sectional view of a substrate to which a series of anisotropic etching processes are applied, respectively, in order to illustrate an anisotropic etching method applied to the present invention
  • FIGS. 4 and 5 a to 5 c show the configuration of an optical coupling module according to a first embodiment of the present invention, in which FIG. 4 is a perspective view thereof, FIG. 5 a is a plan view thereof, FIG. 5 b is a side view thereof, and FIG. 5 c is a plan view of mask patterns which are aligned with each other;
  • FIGS. 6 a to 6 h show a series of processes of fabricating the optical coupling module, shown in FIGS. 4 and 5 a to 5 c, according to the first embodiment of the present invention
  • FIG. 7 shows the configuration of an optical coupling module according to a second embodiment of the present invention.
  • FIGS. 8 and 9 a to 9 c show the configuration of an optical coupling module according to a third embodiment of the present invention, in which FIG. 8 is a perspective view thereof, FIG. 9 a is a plan view thereof, FIG. 9 b is a side view thereof, and FIG. 9 c is a plan view of mask patterns which are aligned with each other;
  • FIGS. 10 a to 10 h show a series of processes of fabricating the optical coupling module, shown in FIGS. 8 and 9 a to 9 c, according to the third embodiment of the present invention
  • FIGS. 11 and 12 a to 12 c show the configuration of an optical coupling module according to a fourth embodiment of the present invention, in which FIG. 11 is a perspective view thereof, FIG. 12 a is a plan view thereof, FIG. 12 b is a side view thereof, and FIG. 12 c is a plan view of mask patterns which are aligned with each other;
  • FIGS. 13 a to 13 f are sectional views of an optical waveguide according to an embodiment of the present invention.
  • FIG. 14 a shows a mask having two rectangular mask patterns for use in an anisotropic etching method according to the first to fourth embodiments of the present invention
  • FIG. 14 b is a view illustrating a problem of the anisotropic etching method when the mask having the two rectangular mask patterns shown in FIG. 14 a are used;
  • FIG. 15 a is a view showing a mask having a compensation pattern according to the present invention.
  • FIG. 15 b shows a state of progress of the etching where the mask having the compensation pattern of FIG. 15 a is used.
  • FIG. 16 is a view illustrating a series of etching processes using the mask with the compensation pattern shown in FIG. 15 a formed thereon.
  • FIGS. 3 a and 3 b are a pattern diagram of a mask for etching, a sectional view of a substrate to which a series of anisotropic etching processes are applied, respectively, in order to illustrate an anisotropic etching method applied to the present invention.
  • An anisotropic etching method uses a principle that an etching rate differs depending on crystal faces of a silicon substrate to be used.
  • the silicon substrate 1 having a (001) face is anisotropically etched with an etching mask 30 having two patterns 31 , 32 .
  • the patterns 31 , 32 formed on the etching mask are caused to have sides which are parallel and perpendicular to a ⁇ 110> direction, respectively.
  • FIG. 3 b shows a series of processes of etching the substrate 1 with the etching mask shown in FIG. 3 a. That is, there is shown a process in which etched grooves 33 , 34 vary depending on widths of the patterns as etch time t1, t2 or t3 passes.
  • a silicon semiconductor or a compound semiconductor such as InP or GaAs semiconductor is used for the substrate 1 .
  • the respective semiconductors have different etch rates of the crystal faces depending on etch solution. For example, when KOH solution is used, a (001) face is etched about 100 times faster than a (111) face in a silicon crystal. That is, in KOH solution of 30 wt. % at 82° C., the (001) face is etched at an etch rate of 1.2 ⁇ m/min, and the (111) face is etched at an etch rate of 0.01 ⁇ m/min.
  • the mask patterns 31 , 32 are formed to have sides parallel or perpendicular to a ⁇ 110> direction on the (001) face and then etched, the (001) face is etched faster in an initial stage, and the (111) face having the low etch rate is exposed. As the etching process is carried out, the (111) face becomes exposed more and more while the width of the (001) face is gradually reduced. Finally, only the (111) face remains, and the vertical etch rate is reduced to about ⁇ fraction (1/100) ⁇ of the initial etch rate. Thus, the etching is substantially stopped to finally form V-shaped grooves. Since the V-shaped grooves are composed of the (111) face, the respective faces forms an angle of 54.7° with respect to the (001) face.
  • the groove 34 etched by the broad mask pattern 32 is formed into a V-shaped groove with a depth of d2 through time period of t1 to t2 and t2 to t3, the groove 33 etched by the narrow mask pattern 31 are hardly changed in its shape. Undercut u formed by etching remains to be the same, irrespective of the widths of the mask patterns. If the axes of the two mask patterns coincide with each other and their etched widths are set to be different from each other, the V-shaped grooves having different sizes can be simultaneously formed on the same axis without any alignment errors.
  • the substrate to be used in this anisotropic etching is composed of Si, KOH solution, EDH (EthyleneDiamine Pyrocatechol and Water) solution or the like is used as etch solution.
  • photolithography and dry or wet etching are used as a method of forming the mask patterns on the mask.
  • the substrate is composed of InP
  • HCl solution, HCl—H 2 O 2 solution or the like is used as the etch solution.
  • the substrate is composed of GaAs
  • H 2 SO 4 —H 2 O 2 -water solution, Br-methanol solution or the like is used to anisotropically etch the substrate.
  • FIGS. 4 and 5 a to 5 c show the configuration of an optical coupling module according to a first embodiment of the present invention, in which FIG. 4 is a perspective view thereof, FIG. 5 a is a plan view thereof, FIG. 5 b is a side view thereof, and FIG. 5 c is a plan view of mask patterns which are aligned with each other.
  • This optical coupling module is fabricated such that an etched groove 41 for mounting the optical fiber on the substrate 1 therein and an etched groove 42 for indicating a fabricating position of the optical waveguide can be self-aligned on a common axis (A-B axis).
  • the etched groove 41 for the optical fiber and the etched groove 42 for the optical waveguide communicate with each other.
  • a mask 43 for forming such an optical coupling module is formed to have one mask pattern 41 a for forming the etched groove 41 for disposition of the optical fiber and another mask pattern 42 a for forming the etched groove 42 for the optical waveguide to have different widths on the substrate 1 along the common axis (A-B axis), as shown in FIG. 5 c.
  • the optical waveguide 5 is formed of silica or polymer such as BCB or polyimide.
  • a core layer of the optical waveguide 5 is formed on the etched groove 42 of the substrate 1 .
  • the width of the etched groove 41 for the optical fiber is determined as follows:
  • the cladding 3 of the optical fiber may vary according to the manufacturer, its diameter is normally 125 ⁇ m, and the diameter of the core 4 of the single mode optical fiber (MFD: Mode Field Diameter) is about 10 ⁇ m.
  • MFD Mode Field Diameter
  • r is the radius of the cladding 3 of the optical fiber to be disposed.
  • the etched groove 42 for the optical waveguide has a width of about 5 to 15 ⁇ m in a single mode, and it has no additional limitation except for its process in a multiple mode.
  • FIGS. 6 a to 6 h show a series of processes for fabricating the optical coupling module shown in FIGS. 4 and 5.
  • first columns of the respective figures show sectional views taken along line a-a in the plan view of FIG. 5 a; second columns of the respective figures show sectional views taken along line b-b in the plan view of FIG. 5 a; and third columns of the respective figures show sectional views taken along line c-c in the plan view of FIG. 5 a.
  • the mask 43 is deposited on the substrate 1 .
  • Silicon wafer having the (001) face is used as the substrate 1 , and a SiO 2 or SiN x film is used as the mask 43 for anisotropic etching.
  • the mask 43 is formed using a reduced pressure deposition, a plasma enhanced chemical vapor deposition or a sputtering method.
  • photoresist 51 is coated onto the mask 43 and etched patterns are then formed, by photolithography.
  • a mask of which self-aligned mask patterns are drawn by an electron-beam master is used.
  • the mask patterns are aligned to accurately coincide with the ⁇ 110> direction of the substrate or the direction perpendicular to the ⁇ 110> direction of the substrate.
  • an OF (orientation flat) of the substrate which informs an accurate orientation, or a pre-identification etching method is used.
  • Conventional AZ4330 or AZ9260 photoresist is used as the photoresist 51 .
  • the mask 43 is etched through an exposed window shown in FIG. 6 c.
  • the mask is etched by a RIE (Reactive Ion Etching) method using plasma-state mixture gas of CF 4 and O 2 , or an etching method using a buffered oxide etchant.
  • the photoresist is removed by a conventional method such as acetone spray.
  • the etching of the substrate is carried out in anisotropic etch solution such as KOH or EDP solution as shown in FIG. 6 d.
  • anisotropic etch solution such as KOH or EDP solution as shown in FIG. 6 d.
  • the etch rate at the (001) face is 1.2 ⁇ m/min under the above etching condition, it takes about 5.9 minutes to perform the etching.
  • the etched groove 41 for the optical fiber becomes V-shaped when the depth is 108 ⁇ m.
  • the etched groove 42 for the optical waveguide is further etched as deep as about 0.8 ⁇ m, resulting in the total depth of 8 ⁇ m.
  • the radius of the cladding of the optical fiber is 62.5 ⁇ m.
  • the process time can be shortened as much as 30 minutes.
  • the etched groove 41 for the optical fiber shown in FIGS. 6 d to 6 h may be U-shaped as shown by a dot line in FIG. 6 d, instead of being V-shaped as shown in the figures.
  • FIG. 6 e shows exposure state in a case where negative photosensitive polymer is used.
  • the mask patterns should be reversed.
  • the negative photosensitive polymer is coated at a thickness of about 3 to 5 ⁇ m, and then, a portion in which the optical fiber is disposed is masked by a Cr mask 52 and only the portion where the optical waveguide is formed is exposed to an ultraviolet ray.
  • BCB having a refractive index of 1.52 is used as the photosensitive polymer.
  • the photosensitive polymer is developed with a developer so that the lower clad layer 53 is formed by only the remaining photosensitive polymer.
  • the photosensitive polymer is cured at a proper temperature. In a case of BCB, it is cured at 250° C. for 1 hour. In the course of this developing process, since the BCB serves as the negative photosensitive polymer, the BCB coated in the deep groove for the optical fiber can be easily removed, irrespective of depth thereof and light intensity applied thereto. In a case where the positive photosensitive polymer is used as the clad layer, the mask patterns should be reversed.
  • polymer having a high refractive index for example, polyamide having a refractive index of 1.7 is coated onto the lower clad layer, and then processed in the same method as shown in FIGS. 6 e and 6 f, resulting in the waveguide core layer 54 .
  • an upper clad layer 55 is formed on the core layer 54 .
  • the upper clad layer 55 may be formed.
  • the optical waveguide becomes slightly depressed at a top portion thereof if a viscosity of polymer solution coated in the step of FIG. 6 e is lower.
  • the core layer 54 is also slightly depressed inward from the etched groove, resulting in a crescent structure. Consequently, the crescent waveguide structure having a typical refractive index is obtained.
  • the optical waveguide has an inverted triangle structure (refer to FIG. 13 c ).
  • a longitudinal inclined surface 56 of the etched groove for the optical waveguide is cut out by a saw-cut or dry etching method. Then, scattered reflection at this end portion is prevented so that light can be transmitted in a horizontal direction.
  • a metal thin film having a high reflectivity such as Au, Al, Ag or Ni is deposited on the longitudinal inclined surface 56 of the etched groove for the optical waveguide by a conventional lift-off method. Then, a reflector for directing an optical signal passing through the optical waveguide upward can be fabricated.
  • the optical coupling module is assembled by manual alignment.
  • FIG. 7 shows the configuration of an optical coupling module according to a second embodiment of the present invention.
  • the optical coupling module which has the same configuration as shown in FIGS. 4 and 5 a to 5 c and is fabricated through the same processes as shown in FIGS. 6 a to 6 h, has the longitudinal inclined surface of the etched groove for the optical fiber abutting an end of the optical fiber. Further, the optical fiber has a constant diameter. Thus, since the optical fiber and the optical waveguide fail to become close to and are spaced apart from each other due to contact between the inclined surface and the end of the optical fiber, the optical coupling efficiency of the module is not good.
  • a U-shaped groove 71 is formed by saw-cutting the longitudinal inclined surface of the etched groove for the optical fiber after the steps of FIGS. 6 a to 6 h.
  • the optical fiber 3 may come close to the optical waveguide 5 , whereby the optical coupling efficiency of the module can be enhanced.
  • FIGS. 8 is a perspective view of an optical coupling module according to a third embodiment of the present invention.
  • FIG. 9 a is a plan view thereof
  • FIG. 9 b is a side view thereof
  • FIG. 9 c is a plan view of mask patterns which are aligned with each other.
  • An insulation film 83 is formed on the substrate 1 having two etched grooves 81 , 82 , which have different widths and are self-aligned as described above. On this insulation film, the optical fiber is disposed or the optical waveguide is formed.
  • the mask patterns for forming the two grooves on the substrate 1 are shown in FIG. 9 c. These two mask patterns 84 are constructed such that a mask pattern 84 a for forming the etched groove 81 in which the optical fiber 3 is disposed on the substrate 1 and a mask pattern 84 b for forming the etched groove 82 in which the optical waveguide is formed on the common axis are formed to have different widths.
  • the insulation film 83 is formed on a part or all of the substrate 1 , the insulation film 83 is used as the lower clad layer and a polymer film is used as the core layer 85 . Accordingly, the number of the polymer film used in the optical waveguide can be reduced. In addition, by integrating semiconductor chips such as a light receiving element, a received light signal amplifier or the like onto the substrate, parasitic components of the circuit can be reduced, so that high-speed signal processing can be made.
  • FIGS. 10 a to 10 h show a series of processes for fabricating the optical coupling module shown in FIGS. 8 and 9 a to 9 c.
  • First columns of the FIGS. 10 a to 10 h are sectional views taken along line a-a in the plan view of FIG. 9 a; second columns thereof are sectional views taken along line b-b in FIG. 9 a; and third columns thereof are sectional views taken along line c-c in FIG. 9 a.
  • a method such as a wet or dry oxidation method, a PE-CVD (plasma enhanced chemical vapor deposition) method, a spin coating method or a sputtering method is used with respect to silicon substrates.
  • a method such as a CVD method, a spin coating method or a sputtering method is used with respect to other substrates, i.e. GaAs or InP substrates. In this way, an oxide film with a thickness of 2 to 10 ⁇ m is grown.
  • the other methods of forming the insulation film on the substrate includes a method using an OPS (oxidized porous Si) film, in which a porous silicon layer is grown on the substrate on which the two etched grooves are formed, using an anodization reaction in the HF solution and then oxidized by a wet or dry oxidation method in an oxidation furnace at 900 to 1100° C., resulting in easy formation of the oxide film having a thickness of 10 to 40 ⁇ m without causing any strain therein.
  • OPS oxidized porous Si
  • the insulation film formed as such substantially follows the V- or U-shaped etched grooves, the V- or U-shaped structure of the grooves can be maintained.
  • its refractive index is in the range of 1.3 to 1.45, the insulation film may be used as a lower clad layer.
  • the core layer 85 of the optical waveguide shown in FIGS. 10 g and 10 h is formed by the method of coating the photosensitive polymer 53 as described in FIGS. 6 e and 6 f. That is, after a photosensitive polymer such as a BCB photosensitive polymer 103 is coated on the entire substrate at a thickness of 3 to 10 ⁇ m, it is exposed and developed. Then, curing is carried out in a state where only the optical waveguide remains. Thus, the core layer 85 is obtained. At this time, when the BCB polymer is coated to be relatively thin as compared with the depth or width of the groove, a core layer having a concave structure in which the core layer of the optical waveguide is depressed inward toward the groove is obtained.
  • the upper clad layer is formed of SiO 2 or the like having a refractive index lower than that of the BCB polymer or exposed to air without any further coating, an optical waveguide having a crescent structure is obtained.
  • BCB or polymer solution having a higher viscosity is used, an optical waveguide having an inverted triangle structure is formed.
  • the SiO 2 film used as the upper clad layer is generally formed by the existing CVD or PE-CVD deposition method.
  • the optical waveguide or SiO 2 film is formed by coating and exposing a photoresist through the aforementioned photolithography method, and then wet etching the film in the buffered oxide etchant or dry etching the film with a RIE method while using the photoresist as a mask.
  • an oxide film having a thickness of several tens of ⁇ m can be formed on a conventional silicon substrate. That is, without using a high-resistance or semi-insulation substrate, the self-resistance of the substrate becomes large, and the leakage current and parasitic capacitance become small. Accordingly, it can be used in optical circuits capable of being operated in the range of up to several tens of GHz.
  • FIGS. 11 and 12 a to 12 c show the configuration of an optical coupling module according to a fourth embodiment of the present invention, in which FIG. 11 is a perspective view thereof, FIG. 12 a is a plan view thereof, FIG. 12 b is a side view thereof, and FIG. 12 c is a plan view of mask patterns which are aligned with each other.
  • a section A of the etched groove for mounting the optical waveguide communicating with the optical fiber is tapered to be widened toward the etched groove for disposition of the optical fiber.
  • a section of the mask pattern should be also designed to be widened toward the optical fiber.
  • the etched depth of the V-shaped, anisotropically etched groove is proportional to the width of the mask pattern. Accordingly, when the mask pattern for forming the etched groove for mounting of the optical waveguide is tapered to be widened toward the optical fiber, and the substrate is anisotropically etched with the tapered mask pattern, there can be obtained a 3-dimensional etched groove whose depth is different depending on the width.
  • the reason why the etched groove for mounting the optical waveguide is formed onto a tapered shape is as follows: An actual diameter error between a cladding of an optical fiber and a core is normally ⁇ 1 ⁇ m, and a standard of offset of the central axes is about ⁇ 0.6 ⁇ m. Accordingly, the central axes may be offset by about ⁇ 1.6 ⁇ m in the worst. This causes the optical coupling efficiency to be lowered during manual alignment.
  • This embodiment is directed to solving of this problem.
  • the core layer of the optical waveguide is mounted in the tapered etched groove, even if the core of the optical fiber is offset by about several ⁇ m in longitudinal and transverse directions from the center of the core layer of the optical waveguide, light can be effectively coupled and guided. Therefore, the optical coupling efficiency can be enhanced.
  • the gradient of the tapered groove is formed to have about ⁇ fraction (2/10) ⁇ to ⁇ fraction (2/1000) ⁇ so as to reduce loss of the mode.
  • the structure of the etched groove for mounting the optical waveguide of the embodiment shown in FIGS. 11 and 12 a to 12 c is shown to be applied to an optical coupling module with an insulation film formed therein, it may be equally applied to an optical module without any insulation film or saw-cut section as shown in FIGS. 4 and 5.
  • an optical fiber jacket itself may be disposed in the etched groove of mounting of the optical fiber instead of the cladding 3 of the optical fiber.
  • the size of the pattern applied to the groove for disposition may be reset by substituting the value of r in the formula (1) with the radius of the jacket.
  • FIGS. 13 a to 13 f are sectional views of an optical waveguide according to an embodiment of the present invention.
  • FIG. 13 a is a sectional view of a refractive index waveguide having a crescent structure formed by sequentially forming a lower clad layer 131 , a core layer 132 and an upper clad layer 133 in an etched groove for mounting of an optical waveguide.
  • FIGS. 13 b to 13 d are configurations in which an etched groove has been formed on a substrate 1 , and an insulation film 134 is then formed, so that this insulation film 134 can be used as the lower clad layer.
  • a further upper clad layer may be formed by coating substance having a refractive index lower than that of BCB on the core layer.
  • FIG. 13 c is a configuration in which the etched groove for mounting of the optical waveguide is filled with the core layer 132 , and the upper clad layer 133 is then formed on the core layer.
  • FIG. 13 d is a V-shaped groove-rib composite configuration in which a portion of the core layer 132 on the etched groove for mounting of the optical waveguide remains while the other portion is partially etched.
  • FIGS. 13 e and 13 f are configurations in which the etched groove for mounting the optical waveguide is formed on the substrate 1 , the insulation film 134 is deposited, and the optical waveguide is then formed on the insulation film.
  • FIG. 13 e is a sectional view of the refractive index waveguide having a crescent structure in which the etched groove for mounting of the optical waveguide is formed on the substrate 1 , the insulation film 134 is deposited, and the lower clad layer 131 , the core layer 132 and the upper clad layer 133 are then sequentially formed.
  • FIG. 13 e is a sectional view of the refractive index waveguide having a crescent structure in which the etched groove for mounting of the optical waveguide is formed on the substrate 1 , the insulation film 134 is deposited, and the lower clad layer 131 , the core layer 132 and the upper clad layer 133 are then sequentially formed.
  • FIG. 13 e is a sectional view of the refractive index waveguide having
  • a substrate is anisotropically etched with a mask having two rectangular patterns. That is, there is used the mask on which one rectangular pattern for forming one etched groove for mounting of an optical waveguide and another rectangular pattern for forming another etched groove for disposition of an optical fiber are formed, as shown in FIG. 14 a.
  • the etched groove for disposition of the optical fiber and the etched groove for mounting of the optical waveguide fail to be formed perpendicularly to each other. That is, edge portions of the etched groove for disposition of the optical fiber are retracted toward the optical waveguide in proportion to the etched depth of the etched groove for disposition of the optical fiber, as shown in FIG. 14 b.
  • the mask pattern is modified as shown in FIG. 15 a. That is, a -shaped beam with a predetermined width B extends by a predetermined length Lo from a start portion of a rectangular pattern 151 for forming the etched groove for mounting the optical waveguide to a rectangular pattern 152 for forming the etched groove for disposition of the optical fiber to form a compensation pattern.
  • the silicon substrate is etched with a mask on which the compensation pattern shown in FIG. 15 a is formed
  • the etching is carried out with a sequence of 1, 2, 3 . . . 8 by the undercut from the protruding edges as shown in FIG. 15 b. Accordingly, portions where the etched groove for disposition of the optical fiber meets the etched groove for mounting of the optical waveguide become right-angled edges.
  • the beam width B of the compensation pattern should be at least two times as large as the undercut produced in the etched groove for disposition of the optical fiber during etching of the etched groove.
  • the length Lo of the compensation pattern is associated with the etched depth H.
  • the ratio of a reduction rate of an outer side of the compensation pattern to a depthwise etch rate is k (at this time, k has a value of 2 to 5 depending on etch solution and an etching condition)
  • the length Lo of the compensation pattern can be calculated by the following formula (2):
  • FIG. 16 shows a series of etching processes using the mask with the compensation pattern shown in FIG. 15 a formed thereon.
  • that of area ⁇ is larger than that of area
  • FIG. 16( a ) is a photograph of the mask pattern on which the compensation pattern of the present invention is formed.
  • FIG. 16( b ) is a photograph of the mask pattern after 5 minutes from start of the etching. A white portion in the photograph is the remaining mask after the silicon substrate is etched by the undercut. That is, the beam of the compensation pattern becomes trapezoid-shaped, and it can be seen from this figure that the etching has been carried out from the protruding edges.
  • FIG. 16( a ) is a photograph of the mask pattern on which the compensation pattern of the present invention is formed.
  • FIG. 16( b ) is a photograph of the mask pattern after 5 minutes from start of the etching. A white portion in the photograph is the remaining mask after the silicon substrate is etched by the undercut. That is, the
  • FIG. 16( c ) is a photograph of the mask pattern after 40 minutes from the start of the etching.
  • FIG. 16( d ) is a photograph of the mask pattern after 45 minutes from the start of the etching.
  • the alignment error can be reduced and the coupling efficiency can be increased.
  • the etched groove for mounting the optical waveguide as a tapered groove, the incident light can be easily guided even if its position is offset from the optical coupling axis.
  • the beam width can be maintained to be constant using the optical waveguide, optical coupling with a high-speed light receiving element can be easily established.
  • the thick oxide film having a low strain and the insulation film, which is an element of the optical waveguide are used, electric circuit elements operable at a high frequency in the optical bench can be easily integrated.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Couplings Of Light Guides (AREA)
US10/243,027 2001-09-14 2002-09-11 Optical coupling module with self-aligned etched grooves and method for fabricating the same Abandoned US20030219208A1 (en)

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US10535973B2 (en) 2015-01-26 2020-01-14 Nlight, Inc. High-power, single-mode fiber sources
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EP1635203A1 (fr) * 2004-09-10 2006-03-15 Kloe S.A. Procédé de couplage entre une fibre optique et un guide d'onde
US20090200563A1 (en) * 2008-02-13 2009-08-13 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device and production method therefor
US8055105B2 (en) 2009-04-06 2011-11-08 Nitto Denko Corporation Opto-electric hybrid module
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US10226837B2 (en) 2013-03-15 2019-03-12 Nlight, Inc. Thermal processing with line beams
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US10281648B2 (en) 2013-07-30 2019-05-07 President And Fellows Of Harvard College Device support structures from bulk substrates
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US10971885B2 (en) 2014-06-02 2021-04-06 Nlight, Inc. Scalable high power fiber laser
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US10768433B2 (en) 2015-09-24 2020-09-08 Nlight, Inc. Beam parameter product (bpp) control by varying fiber-to-fiber angle
US11719948B2 (en) 2015-09-24 2023-08-08 Nlight, Inc. Beam parameter product (BPP) control by varying fiber-to-fiber angle
US11794282B2 (en) 2015-11-23 2023-10-24 Nlight, Inc. Fine-scale temporal control for laser material processing
US10434600B2 (en) 2015-11-23 2019-10-08 Nlight, Inc. Fine-scale temporal control for laser material processing
US11331756B2 (en) 2015-11-23 2022-05-17 Nlight, Inc. Fine-scale temporal control for laser material processing
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US10466494B2 (en) * 2015-12-18 2019-11-05 Nlight, Inc. Reverse interleaving for laser line generators
US20170176758A1 (en) * 2015-12-18 2017-06-22 Nlight, Inc. Reverse interleaving for laser line generators
US10730785B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Optical fiber bending mechanisms
US10673198B2 (en) 2016-09-29 2020-06-02 Nlight, Inc. Fiber-coupled laser with time varying beam characteristics
US10295845B2 (en) 2016-09-29 2019-05-21 Nlight, Inc. Adjustable beam characteristics
US10423015B2 (en) 2016-09-29 2019-09-24 Nlight, Inc. Adjustable beam characteristics
US10663767B2 (en) * 2016-09-29 2020-05-26 Nlight, Inc. Adjustable beam characteristics
US10732439B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Fiber-coupled device for varying beam characteristics
US10673199B2 (en) 2016-09-29 2020-06-02 Nlight, Inc. Fiber-based saturable absorber
US20180088343A1 (en) * 2016-09-29 2018-03-29 Nlight, Inc. Adjustable beam characteristics
US10673197B2 (en) 2016-09-29 2020-06-02 Nlight, Inc. Fiber-based optical modulator
US20180106954A1 (en) * 2016-10-13 2018-04-19 Stmicroelectronics Sa Method for manufacturing an optical device
US11774664B2 (en) 2016-10-13 2023-10-03 Stmicroelectronics Sa Method for manufacturing an optical device
US10782468B2 (en) * 2016-10-13 2020-09-22 Stmicroelectronics Sa Method for manufacturing an optical device
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KR100439088B1 (ko) 2004-07-05
KR20030023929A (ko) 2003-03-26

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