US20030146690A1 - Led-based white-light emitting lighting unit - Google Patents

Led-based white-light emitting lighting unit Download PDF

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US20030146690A1
US20030146690A1 US10/296,847 US29684702A US2003146690A1 US 20030146690 A1 US20030146690 A1 US 20030146690A1 US 29684702 A US29684702 A US 29684702A US 2003146690 A1 US2003146690 A1 US 2003146690A1
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white
emitting
illumination unit
led
phosphors
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Andries Ellens
Frank Jermann
Michael Ostertag
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Osram GmbH
Ams Osram International GmbH
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Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, PATENT-TREUHAND-GESELLSCHAFT FUR ELEKTRISCHE GLUHLAMPEN MBH reassignment OSRAM OPTO SEMICONDUCTORS GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JERMANN, FRANK, OSTERTAG, MICHAEL, ELLENS, ANDRIES
Publication of US20030146690A1 publication Critical patent/US20030146690A1/en
Priority to US11/022,439 priority Critical patent/US7002291B2/en
Priority to US11/321,822 priority patent/US7183706B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the invention relates to an LED-based white-emitting illumination unit, in which the LED emits primary UV radiation or blue light. Moreover, at least one yellow-emitting phosphor and one green-emitting phosphor are used for partial conversion of the primary radiation.
  • the yellow phosphor used is a Ce-activated garnet which contains in particular Y and/or Tb.
  • the green phosphor used is an Eu-activated calcium magnesium chlorosilicate (Ca 8 Mg(SiO 4 ) 4 Cl 2 ).
  • Luminescence conversion LEDs which emit white light are currently produced by combining a blue Ga(In)N LED which emits at approximately 460 nm and a yellow-emitting YAG:Ce 3+ phosphor (U.S. Pat. No. 5,998,925 and EP 862 794).
  • these white light LEDs can only be used to a limited extent for general-purpose illumination, on account of their poor color rendering caused by the absence of color components (primarily the red component).
  • An alternative is to mix three colors RGB (red, green, blue), which together result in white, cf. for example WO 98/39805.
  • a completely new concept which is based on a BYG mixture, i.e. the combination of a blue, yellow and green color, is used for the first time.
  • the essential factor is that the yellow phosphors are so broad-banded that they also have a sufficient proportion of the emission in the red spectral region, in particular a proportion of at least 20% of their total emission in the visible region lies in a spectral region ⁇ 620 nm.
  • RE rare earths
  • the long-wave shift caused by Tb has a particularly positive effect with a view to achieving a sufficient red proportion.
  • the color locus of the green phosphor together with the color locus of the yellow phosphor and that of the blue LED (or of the blue phosphor), encloses a broad triangle, creating additional possibilities for adapting to specific requirements.
  • the variation range of the color locus of different garnets, by contrast, is considerably less. Therefore, it is also possible for the color temperature which can be achieved to be scattered over a wide range, typically from 4000 to 10 000 K.
  • the invention is particularly advantageous in connection with the development of a white-emitting illumination unit.
  • This is an illumination unit which is based either on an LED array or on individual LEDs or is a direct luminescence conversion LED in which the phosphors are in direct or indirect contact with the chip, i.e. are applied directly to the chip or are embedded in the resin surrounding it.
  • White light can be generated by a combination of LEDs which emit UV or blue light (referred to overall in the present description as “short-wave” light) with an emission wavelength (peak) of between 300 and 470 nm and the phosphor mixture according to the invention, which completely or partially absorbs the radiation from the LED and itself emits in spectral regions in which its additive mixture with the light of the LED results in white light with good color rendering. It may be necessary to add an additional blue-emitting phosphor component (for example BAM). Particularly efficient excitation is achieved, in the case of a UV LED, at an emission wavelength (peak) of approximately 330 to 350 nm and, in the case of a blue LED, at an emission wavelength (peak) of approximately 450 to 470 nm.
  • BAM blue-emitting phosphor component
  • the result is an improved color rendering of the known white LED based on a garnet phosphor, for example by admixing 20 to 50% by weight of the chlorosilicate phosphor.
  • the phosphor Ca 8 Mg(SiO 4 ) 4 Cl 2 :Eu 2+ is known from the scientific literature, without this literature indicating any specific application for the phosphor. According to the invention, this phosphor is emanately suitable for use in white LEDs, particularly advantageously based on a three-color mixture which is excited by a primary UV light source (300 to 390 nm). However, it is also suitable for special applications in a white LED with blue primary light source (430 to 470 nm).
  • Mn as further dopant in addition to Eu, in small quantities (up to approximately 20% of the molar proportion of Eu), allows the emission to be shifted in a controlled manner out of the green spectral region more toward the long-wave region, i.e. into the yellow spectral region. This has the advantage of enabling the emission to be better matched to the human eye and therefore also of improving the visual use effect.
  • the europium concentration influences the color locus of the emission light when used in a light source, in particular an LED.
  • the color locus of this phosphor can be additionally fine-tuned using the ratio of the two concentrations Eu:Mn, which simplifies or optimizes adaptation to any further (yellow or blue) phosphors in the LED.
  • the phosphors according to the invention can also be used, for example, in an appliance in which an LED array (UV or blue primary emission) illuminates phosphors on a transparent plate or in which individual LEDs illuminate phosphors which are arranged on a lens.
  • an LED array UV or blue primary emission
  • individual LEDs illuminate phosphors which are arranged on a lens.
  • the phosphors according to the invention are used to produce a white LED of high color rendering.
  • the phosphors are applied either separately or in a mixture, and if appropriate are combined with a binder which as far as possible is transparent (EP 862 794).
  • the phosphors completely or partially absorb the light from the LED which emits UV/blue light and emit it again in other spectral regions (primarily yellow and green) in a sufficiently broadband (specifically with a significant proportion of red) that an overall emission with the desired color locus is formed.
  • a high quantum efficiency around 70%
  • a spectral emission which is found to be bright, on account of the sensitivity of the eye.
  • the color locus can be set within a wide range.
  • a suitable light source is an LED (light-emitting diode), which generates white light, either by directly mixing the green- or yellow-emitting phosphor with the primary radiation in the blue spectral region (430 to 470 nm) or by converting radiation which is primarily emitted as UV radiation into white by means of a plurality of phosphors (complete BYG mixing by means of three phosphors).
  • LED light-emitting diode
  • the terms blue, yellow and green will be understood as meaning emission maxima in the regions blue: 430 to 470 nm, green: 490 to 525 nm and yellow: 545 to 590 nm.
  • the primary light source used is the radiation from a UV-emitting or blue-emitting chip. Particularly good results are achieved with a UV-LED whose emission maximum lies at 330 to 370 nm. An optimum has been found to lie at 355 to 365 nm, taking particular account of the excitation spectrum of the garnets and chlorosilicates.
  • the blue phosphor used here is, for example, BAM. In the case of a blue chip, particularly good results can be achieved with a peak wavelength of 430 to 470 nm. An optimum has been found to lie at 445 to 460 nm, taking particular account of the excitation spectrum of the garnets and chlorosilicates.
  • a variant with particularly good color rendering is the joint use of two phosphors, namely a phosphor with a high Tb content, preferably pure TbAG:Ce, together with chlorosilicate:Eu.
  • a variant with particularly good temperature stability is the joint use of two phosphors, namely a phosphor with a high Y content, preferably pure YAG:Ce, together with chlorosilicate:Eu.
  • a particularly suitable LED which emits UV or blue radiation (referred to as short-wave radiation for short below) as primary radiation is a Ga(In)N LED, or alternatively any other short-wave emitting LED which emits in the 300 to 470 nm region. In particular, it is recommended for the main emission region to lie in the UV region (320 to 360 nm) and in the blue region (430 to 470 nm), since this is when the efficiency is highest.
  • FIG. 1 shows the excitation and emission spectrum of an europium-doped chlorosilicate
  • FIG. 2 shows the reflection and emission spectrum of a further europium-doped chlorosilicate
  • FIG. 3 shows a semiconductor component which is used as light source (LED) for white light
  • FIG. 4 shows the emission spectrum of the LED from FIG. 3, using the phosphors TbAG and CS:Eu in accordance with the present invention
  • FIG. 5 shows the emission spectrum of a further LED using the phosphors TbAG and CS:Eu in accordance with the present invention
  • FIG. 6 shows the temperature behavior of an LED using the phosphors YAG and CS:Eu in accordance with the present invention
  • FIG. 7 shows the emission spectrum of an LED using the phosphors YAG and CS:Eu in accordance with the present invention
  • FIG. 8 shows an illumination unit using phosphors in accordance with the present invention.
  • the phosphor powder is produced by means of a high-temperature solid-state reaction.
  • the highly pure starting materials CaCO 3 , MgO, SiO 2 and CaCl 2 are mixed together in a molar ratio of 7:1:4:1.5.
  • a small quantity of Eu 2 O 3 or MnCO 3 is added for doping purposes, replacing the corresponding molar quantity of CaCO 3 .
  • the powder is heated at 1000-1200° C. for 1-4 h in a reducing atmosphere (H 2 /N 2 ), so that it reacts with the compound described above.
  • a reducing atmosphere H 2 /N 2
  • the powder can be washed again using fully deionized water. The result is a phosphor powder with high quantum efficiencies (typically approximately 70%) when excited in the short-wave wavelength region around 400 nm.
  • FIG. 1 shows a typical excitation and emission spectrum of a europium-doped powder.
  • the reduction in excitability at greater wavelengths is caused by the Eu 2+ absorption band.
  • quantum efficiencies which are comparable to those at 400 nm or even shorter wavelengths (down to approximately 340 nm) are still measured.
  • the emission spectrum has an Eu 2+ emission band with a maximum at about 507 nm. This emission appears green to the eye. If desired, the emission behavior of the phosphor can be better matched to the sensitivity of the eye by co-doping with a small quantity of manganese.
  • FIG. 2 shows a further exemplary embodiment of an Eu-doped chlorosilicate Ca 8 Mg(SiO 4 ) 4 Cl 2 :Eu 2+ (CS:Eu for short).
  • the peak wavelength is at 509 nm, the mean wavelength at 522 nm.
  • the emission when irradiated at 400 nm is shown in arbitrary units in FIG. 2 a .
  • the reflection (in percent) is also indicated in FIG. 2 b.
  • a structure similar to that described in U.S. Pat. No. 5,998,925 is used.
  • the structure of a light source of this type for white light is specifically shown in FIG. 3.
  • the light source is a semiconductor component (chip 1 ) of type InGaN with a peak emission wavelength of 450 nm, having a first and a second electrical connection 2 , 3 embedded in an opaque base housing 8 in the region of a recess 9 .
  • One of the connections 3 is connected to the chip 1 via a bonding wire 14 .
  • the recess has a wall 17 which serves as reflector for the blue primary radiation from the chip 1 .
  • the recess 9 is filled with a potting compound 5 , the principal constituents of which are an epoxy casting resin (80 to 90% by weight) and phosphor pigments 6 (less than 15% by weight). Any other small fractions are methyl ether and aerosil, inter alia.
  • the chlorosilicate phosphor (CS:Eu) of the second exemplary embodiment together with TbAG:Ce are used for the phosphor pigments.
  • the mixing ratio (CS:Eu) to TbAG is 4:6 (parts by weight).
  • the emission spectrum of this exemplary embodiment is shown in FIG. 4.
  • BG conventional solution
  • BYG solution according to the invention
  • the BG solution selected was a blue-emitting InGaN chip (peak at 450 nm) together with conventional YAG:Ce.
  • the emission spectrum of the BYG solution is shown in FIG. 5.
  • a further preferred exemplary embodiment of a white LED uses, in addition to the InGaN chip (blue emission at 450 nm), the combination of the abovementioned chlorosilicate phosphor (CS:Eu) with YAG:Ce.
  • This exemplary embodiment is distinguished by an extremely similar temperature-extinguishing behavior of both phosphors, as can be seen from FIG. 6.
  • the temperature-extinguishing behavior of both phosphors is practically identical over the permissible range of use (up to approximately 100° C.) and is only slightly temperature-dependent.
  • garnets such as for example the mixed garnet (Y 0.33 Gd 0.63 Ce 0.04 )Al 5 O 12 , which was also investigated for comparative purposes, have a considerably worse constancy of temperature (in FIG. 6, this mixed garnet is referred to as (Y,Gd)AG:Ce). Therefore, particular constancy of the color locus and of further lighting data is ensured under a very wide range of temperature conditions in this exemplary embodiment, which contains a high level of Y (or alternatively Tb) as RE (at least 60 mol % of the RE lattice position).
  • the mixing ratio of the two phosphors is 4.6:1.
  • FIG. 8 shows a surface-lighting fitting 20 as illumination unit. It comprises a common support 21 , to which a cuboidal outer housing 22 is adhesively bonded. Its upper side is provided with a common cover 23 .
  • the cuboidal housing has cutouts in which individual semiconductor components 24 are accommodated. They are UV-emitting LEDs with a peak emission of 360 nm.
  • the conversion into white light takes place by means of conversion layers 25 which are arranged on all surfaces which are accessible to the UV radiation. These include the inner surfaces of the side walls of the housing, of the cover and of the base part.
  • the conversion layers 25 consist of three phosphors which emit in the yellow, green and blue spectral regions using the phosphors according to the invention.
US10/296,847 2000-05-29 2001-05-11 Led-based white-light emitting lighting unit Abandoned US20030146690A1 (en)

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US11/022,439 US7002291B2 (en) 2000-05-29 2004-12-22 LED-based white-emitting illumination unit
US11/321,822 US7183706B2 (en) 2000-05-29 2005-12-29 Led-based illumination unit

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DE10026435A DE10026435A1 (de) 2000-05-29 2000-05-29 Kalzium-Magnesium-Chlorosilikat-Leuchtstoff und seine Anwendung bei Lumineszenz-Konversions-LED
DE10026435.2 2000-05-29

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US11/022,439 Expired - Lifetime US7002291B2 (en) 2000-05-29 2004-12-22 LED-based white-emitting illumination unit
US11/321,822 Expired - Lifetime US7183706B2 (en) 2000-05-29 2005-12-29 Led-based illumination unit

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US11/321,822 Expired - Lifetime US7183706B2 (en) 2000-05-29 2005-12-29 Led-based illumination unit

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US (3) US20030146690A1 (de)
EP (1) EP1285467A1 (de)
JP (1) JP5097999B2 (de)
KR (1) KR20030007742A (de)
CN (1) CN1432198A (de)
CA (1) CA2410668A1 (de)
DE (1) DE10026435A1 (de)
TW (1) TW554030B (de)
WO (1) WO2001093341A1 (de)

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EP1571715A1 (de) * 2004-03-04 2005-09-07 Nan Ya Plastics Corporation Verfahren zur Erzeugung weissen Lichts durch sekundäre Lichtanregung und entsprechendes Produkt
US20060097245A1 (en) * 2002-08-30 2006-05-11 Aanegola Srinath K Light emitting diode component
US20060214175A1 (en) * 2005-03-25 2006-09-28 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
EP1726631A1 (de) * 2005-05-23 2006-11-29 SuperNova Optoelectronics Corporation Weiss emittierende Beleuchtungseinrichtung
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US20070125982A1 (en) * 2005-12-02 2007-06-07 Sarnoff Corporation Metal silicate halide phosphors and LED lighting devices using the same
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US20070247829A1 (en) * 2004-08-05 2007-10-25 Tim Fiedler Light Source with a Low Color Temperature
US20080054280A1 (en) * 2006-09-06 2008-03-06 Gelcore Llc Light emitting packages and methods of making same
US20080128654A1 (en) * 2004-04-27 2008-06-05 Matsushita Electric Industrial Co., Ltd. Phosphor composition and method for producing the same, and light-emitting device using the same
US20080210849A1 (en) * 2002-10-25 2008-09-04 Iman Sherazi Direct attach optical receiver module and method of testing
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CN1432198A (zh) 2003-07-23
JP5097999B2 (ja) 2012-12-12
TW554030B (en) 2003-09-21
US7002291B2 (en) 2006-02-21
WO2001093341A1 (de) 2001-12-06
US20050104503A1 (en) 2005-05-19
EP1285467A1 (de) 2003-02-26
CA2410668A1 (en) 2002-11-27
US7183706B2 (en) 2007-02-27

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