US20020097562A1 - Electronic device and manufacturing same - Google Patents
Electronic device and manufacturing same Download PDFInfo
- Publication number
- US20020097562A1 US20020097562A1 US10/011,291 US1129101A US2002097562A1 US 20020097562 A1 US20020097562 A1 US 20020097562A1 US 1129101 A US1129101 A US 1129101A US 2002097562 A1 US2002097562 A1 US 2002097562A1
- Authority
- US
- United States
- Prior art keywords
- mount substrate
- electronic component
- resin film
- electronic device
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 328
- 229920005989 resin Polymers 0.000 claims abstract description 251
- 239000011347 resin Substances 0.000 claims abstract description 251
- 239000004020 conductor Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims description 42
- 230000008859 change Effects 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 39
- 238000012545 processing Methods 0.000 claims description 30
- 238000010897 surface acoustic wave method Methods 0.000 description 44
- 239000007789 gas Substances 0.000 description 21
- 230000002411 adverse Effects 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 230000009477 glass transition Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/16—Apparatus for electrolytic coating of small objects in bulk
- C25D17/28—Apparatus for electrolytic coating of small objects in bulk with means for moving the objects individually through the apparatus during treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
Definitions
- the present invention relates to an electronic device comprising a mount substrate and an electronic component mounted on the mount substrate, and to a method of manufacturing such an electronic device.
- Surface acoustic wave devices include interdigitated electrodes formed on a surface of a piezoelectric substrate. Surface acoustic wave devices are widely used as filters in mobile communication equipment such as cellular phones.
- An electronic component such as a semiconductor component is frequently used in the form of a package.
- the package is configured such that the electronic component is mounted on a mount substrate, connection electrodes of the electronic component are electrically connected to patterned conductors of the mount substrate, and portions connecting the connection electrodes of the electronic component and the patterned conductors of the mount substrate are sealed.
- the electronic component is a surface acoustic wave device.
- a device which comprises a mount substrate and an electronic component mounted on the mount substrate is referred to as an electronic device.
- a face-down bonding For electronic devices, methods for electrically connecting the connection electrodes of the electronic component to the patterned conductors of the mount substrate are broadly divided into two: a face-down bonding and a face-up bonding.
- the electronic component In the face-down bonding, the electronic component is placed such that the surface of the electronic component having the connection electrodes formed thereon faces toward the mount substrate.
- the face-up bonding the electronic component is placed such that the surface of the electronic component having the connection electrodes formed thereon faces away from the mount substrate.
- the face-down bonding is advantageous over the face-up bonding in terms of downsizing of the electronic device.
- an underfill material is filled in between the electronic component and the mount substrate to seal the portions where the connection electrode of the electronic component and the patterned conductor of the mount substrate are electrically connected to each other.
- the aforementioned general method cannot be employed because of a problem typical of the surface acoustic wave device.
- the problem typical of the surface acoustic wave device derives from the fact that the surface acoustic wave device has interdigitated electrodes formed on a surface thereof. That is, while the surface acoustic wave device needs to be sealed in order to prevent the interdigitated electrodes from being contaminated by moisture or foreign materials such as dust particles, it is necessary to prevent a resin or the like for the sealing from touching the surface acoustic wave propagation region on the surface of the surface acoustic wave device so as not to adversely affect the operation of the surface acoustic wave device.
- the chip-type electronic component is first mounted on the substrate through flip chip bonding. Then, the electronic component is covered with a sealing film made of a resin. Then, the film is pressed against the substrate at around the electronic component with a stamping die to adhere the film to the substrate, thereby sealing the electronic component with the film.
- a sealing film made of a resin.
- the film is pressed against the substrate at around the electronic component with a stamping die to adhere the film to the substrate, thereby sealing the electronic component with the film.
- two methods for adhering the sealing film to the substrate one making use of adhesiveness of the film and the other employing an adhesive.
- the chip-type electronic component is first mounted on the substrate. Then, an adhesive is applied to areas of a flexible sheet and/or the substrate at which the sheet and the substrate are to be bonded to each other. The electronic component is then covered with the sheet. Then, a gas captured in a cavity defined by the sheet and the substrate is sucked through a small hole provided in the substrate. Thereafter, the sheet is pressed against the substrate using a shaping tool, thereby causing the adhesive to bond the sheet to the substrate.
- the chip-type electronic component is first mounted on the substrate. Then, a deformed film is placed onto the electronic component. A gas captured therebetween is sucked through a hole provided in the substrate to fit the deformed film onto the electronic component and adhere the deformed film to the substrate.
- a deformed film is placed onto the electronic component. A gas captured therebetween is sucked through a hole provided in the substrate to fit the deformed film onto the electronic component and adhere the deformed film to the substrate.
- two methods for adhering the deformed film to the substrate one employing an adhesive and the other making use of the thermo-adhering property of the deformed film.
- the one in which the surface acoustic wave device is enclosed and sealed with a cap-like structure presents a problem in that it is difficult to downsize the electronic device.
- Another problem with this method is that it is impossible to improve the strength and stability of mechanical bonding between the connection electrode of the surface acoustic wave device and the patterned conductor of the mount substrate, because the aforementioned structure does not contribute to the mechanical bonding between the connection electrode of the surface acoustic wave device and the patterned conductor of the mount substrate.
- the electronic device comprising a surface acoustic wave device as its electronic component
- the one in which the surface acoustic wave device is enclosed and sealed with a side-fill material has a problem in that the side-fill material can enter the surface acoustic wave propagation region on the surface of the surface acoustic wave device.
- the electronic device is an oscillator or a high-frequency circuit component, too, as in the case of the surface acoustic wave device, operation of the electronic component can be adversely affected by a sealing resin if the resin touches the surface of the electronic device. Accordingly, the aforementioned problems also arise when an oscillator or a high-frequency circuit component is used as the electronic component, as in the case of a surface acoustic wave device.
- the method disclosed in Published Unexamined Japanese Patent Application 2001-53092 involves a cumbersome step of applying an adhesive to the areas of the sheet and/or the substrate at which the sheet and the substrate are to be bonded to each other.
- the deformed film is used to package the electronic component.
- this publication disclosed is a technique of fitting the deformed film onto the electronic component by suction through a hole provided on the substrate.
- the publication does not disclose that the film is deformed by the suction through the hole provided in the substrate. It is thus conceivable that the deformed film mentioned in this publication is a film that has been shaped in advance to fit the outer shape of the electronic component. Therefore, the method disclosed in Published Unexamined Japanese Patent Application 2001-176995 requires the step of preparing the deformed film, and this step is also cumbersome.
- the center frequency of its passband is set, for example, at around 1800 MHz.
- a permissible shift of the center frequency of an actual filter from the desired center frequency is about +/ ⁇ 1.2 MHz at maximum.
- the band pass filter employing a surface acoustic wave device thus requires its center frequency to be set with extremely high accuracy.
- a change in the characteristics of the surface acoustic wave device can cause a shift of the center frequency in a passband of the filter, and a degradation in transmission characteristics of the filter such as an increase in the insertion loss, in particular.
- a second object of the invention is to provide a method of manufacturing the electronic device which makes it possible to effect sealing of the electronic component through simple steps and without adversely affecting the operation of the electronic component.
- a third object of the invention is to provide an electronic device comprising a mount substrate and an electronic component mounted on the mount substrate which makes it possible to improve the strength and stability of mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate, with a simple configuration and without adversely affecting the operation of the electronic component.
- a fourth object of the invention is to provide an electronic device which makes it possible to effect sealing of the electronic component with a simple configuration and without adversely affecting the operation of the electronic component.
- a method of the invention for manufacturing an electronic device comprising: a mount substrate having a patterned conductor exposed on one of surfaces of the mount substrate; and an electronic component having a connection electrode formed on one of surfaces of the electronic component, the one of the surfaces of the electronic component that has the connection electrode formed thereon being disposed to face toward the one of the surfaces of the mount substrate, the connection electrode being electrically connected and mechanically bonded to the patterned conductor of the mount substrate.
- the method comprises the steps of:
- the resin film covers the electronic component and the mount substrate, being in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component, and is adhered to the mount substrate.
- the resin film acts to reinforce the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate.
- the resin film may seal the electronic component.
- a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate.
- the resin film may be deformed with the resin film softened in the step of deforming the resin film.
- the hole formed in the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed.
- the method of manufacturing the electronic device may further comprise the step of closing the hole after the step of adhering the resin film.
- the hole formed in the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film in the step of adhering the resin film.
- the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate.
- the method of manufacturing the electronic device of the invention may further comprise the step of predetermining a relationship between a processing condition employed in the step of adhering the resin film and a change in characteristics of the electronic component between before and after the step of adhering the resin film, and, in the step of adhering the resin film, the processing condition may be controlled based on the relationship mentioned above, so as to obtain desired characteristics of the electronic component.
- the processing condition may include at least one of a temperature of the resin film as heated and a period of time over which the resin film is heated.
- the resin film may contain a hardening accelerator, and the processing condition may include a content of the hardening accelerator contained in the resin film.
- An electronic device comprises: a mount substrate having a patterned conductor exposed on one of surfaces of the mount substrate; and an electronic component having a connection electrode formed on one of surfaces of the electronic component, the one of the surfaces of the electronic component that has the connection electrode formed thereon being disposed to face toward the one of the surfaces of the mount substrate, the connection electrode being electrically connected and mechanically bonded to the patterned conductor of the mount substrate; and a resin film that covers the electronic component and the mount substrate in close contact with a surface of the electronic component that is farther from the mount substrate and with a part of the one of the surfaces of the mount substrate, the part being located around the electronic component, the resin film being adhered to the mount substrate after having been fluidized and thereafter hardened by heating.
- the mount substrate has a hole used to suck therethrough a gas existing on the electronic-component side of the mount substrate from the other side of the mount substrate to thereby define a shape of the resin film.
- the resin film covers the electronic component and the mount substrate, being in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component, and is adhered to the mount substrate.
- the resin film acts to reinforce the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate.
- the resin film may seal the electronic component.
- a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate.
- the hole of the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed.
- the electronic device may further comprise a plug member for closing the hole of the mount substrate.
- the hole of the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film.
- the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate.
- FIG. 1 is a cross-sectional view illustrating an electronic device according to a first embodiment of the invention.
- FIG. 2 is an explanatory view conceptually illustrating an example of characteristics of a resin film used in the first embodiment of the invention.
- FIG. 3 is a cross-sectional view illustrating an example of a related-art bonding method shown for comparison with the first embodiment of the invention.
- FIG. 4 is a cross-sectional view illustrating another example of a related-art bonding method shown for comparison with the first embodiment of the invention.
- FIG. 5 is a cross-sectional view illustrating still another example of a related-art bonding method shown for comparison with the first embodiment of the invention.
- FIG. 6 is a cross-sectional view illustrating an example of a bonding method employed in the first embodiment of the invention.
- FIG. 7 is a cross-sectional view illustrating another example of the bonding method employed in the first embodiment of the invention.
- FIG. 8 is a cross-sectional view illustrating still another example of the bonding method employed in the first embodiment of the invention.
- FIG. 9 is a plan view illustrating an example of a surface acoustic wave device employed as an electronic component in the first embodiment of the invention.
- FIG. 10 is an explanatory view illustrating a step of a method of manufacturing the electronic device according to the first embodiment of the invention.
- FIG. 11 is an explanatory view illustrating a step that follows FIG. 10.
- FIG. 12 is an explanatory view illustrating a step that follows FIG. 11.
- FIG. 14 is a plan view illustrating the mount substrate, the electronic component and the resin film before the cutting step shown in FIG. 13.
- FIG. 15 is a cross-sectional view illustrating the electronic device according to the first embodiment of the invention, where a through hole is employed as a hole for sucking.
- FIG. 16 is an explanatory view illustrating a step of a method of manufacturing an electronic device according to a second embodiment of the invention.
- FIG. 17 is an explanatory view illustrating a step that follows FIG. 16.
- FIG. 18 is an explanatory view illustrating a step that follows FIG. 17.
- FIG. 19 is an explanatory view illustrating a step that follows FIG. 18.
- FIG. 20 is a cross-sectional view illustrating the electronic device according to the second embodiment of the invention, where a through hole is employed as a hole for sucking.
- FIG. 21 is a characteristic diagram illustrating an example of transmission characteristics of a band pass filter in a third embodiment of the invention.
- FIG. 22 is a characteristic diagram illustrating another example of the transmission characteristics of the band pass filter in the third embodiment of the invention.
- FIG. 23 is a characteristic diagram illustrating the relationship among the number of times of heat treatment, the amount of change in center frequency, and the amount of change in S 21 parameter in the third embodiment of the invention.
- FIG. 24 is a characteristic diagram illustrating the relationship between the content of a hardening accelerator and the amount of change in center frequency in the third embodiment of the invention.
- FIG. 25 is a characteristic diagram illustrating the relationship among the content of the hardening accelerator and temperature at which the resin film is heated, and the amount of change in center frequency in the third embodiment of the invention.
- An electronic device 10 comprises a mount substrate 11 having patterned conductors 12 that are patterned into predetermined shapes and exposed on a surface 11 a of the mount substrate 11 , and an electronic component 13 having connection electrodes 14 formed on a surface 13 a thereof.
- the surface 13 a of the electronic component, on which the connection electrodes 14 are formed, is disposed to face toward the surface 11 a of the mount substrate 11 , and the connection electrodes 14 are electrically connected and mechanically bonded to the patterned conductors 12 of the mount substrate 11 .
- the electronic device 10 further comprises a resin film 15 that is adhered to the substrate 11 .
- the resin film 15 covers the electronic component 13 and the mount substrate 11 in close contact with a surface 13 b of the electronic component 13 that is located farther from the mount substrate 11 and with a part of the surface 11 a of the mount substrate 11 , the part being located around the electronic component 13 .
- the mount substrate 11 is formed of glass, resin, ceramics or the like.
- the electronic component 13 may be, for example, a surface acoustic wave device, an oscillator, or a high-frequency circuit component, or may be other electronic components. As described in the foregoing, the electronic component 13 is mounted on the mount substrate 11 through face-down bonding such that the surface 13 a having the connection electrodes 14 formed thereon faces toward the mount substrate 11 . There is formed a cavity 16 in between the surface 13 a of the electronic component 13 and the surface 11 a of the mount substrate 11 .
- the surface 13 b of the electronic component 13 farther from the mount substrate 11 is covered with the resin film 15 with no space left therebetween.
- the part of the surface 11 a of the mount substrate 11 located around the electronic component 13 is also covered with the resin film 15 with no space left therebetween.
- the resin film 15 seals the entire electronic component 13 including the portions where the connection electrodes 14 of the electronic component 13 and the patterned conductors 12 of the mount substrate 11 are electrically connected to each other.
- the resin film 15 is formed of a thermosetting resin such as an epoxy resin.
- the resin film 15 has a thickness of 50 to 150 ⁇ m, for example.
- the method of manufacturing the electronic device 10 includes the steps of: disposing the electronic component 13 and the mount substrate 11 such that the surface 13 a of the electronic component 13 faces toward the surface 11 a of the mount substrate 11 , and electrically connecting and mechanically bonding the connection electrodes 14 of the electronic component 13 to the patterned conductors 12 of the mount substrate 11 ; and placing the resin film 15 such that the resin film 15 covers the electronic component 13 and the mount substrate 11 in close contact with the surface 13 b of the electronic component 13 located farther from the mount substrate 11 and with the part of the surface 11 a of the mount substrate 11 located around the electronic component 13 , and adhering the resin film 15 to the mount substrate 11 .
- FIG. 2 conceptually describe an example of the characteristics of the resin film 15 used in this embodiment.
- white dots and solid lines indicate the relationship between temperature of the resin film 15 and its length in a given direction.
- black dots and a dashed line indicate the relationship between temperature of a resin such as a BT (Bismaleimide Triazine) resin, which is stable in shape against variations in temperature, and its length in a given direction, for comparison with the characteristics of the resin film 15 .
- BT Bismaleimide Triazine
- the resin that is stable in shape against variations in temperature varies its length substantially linearly with changes in temperature.
- the resin film 15 maintains the shape of a film at room temperature RT.
- the resin film 15 As shown by reference numeral 101 , as the temperature of the resin film 15 increases from the room temperature RT to its glass transition temperature TG, the resin film 15 is gradually softened while expanding so as to vary its length substantially linearly with changes in the temperature.
- the resin film 15 As shown by reference numeral 102 , as the temperature of the resin film 15 increases from its glass transition temperature TG to its hardening starting temperature HT, the resin film 15 becomes fluidized and expands suddenly.
- the resin film 15 when the resin film 15 is heated to a temperature equal to or greater than the hardening starting temperature HT, the resin film 15 starts hardening.
- the hardening starting temperature HT is about 150 to 200° C., for example, although it differs depending on characteristics of the resin film 15 .
- the resin film 15 is formed of an epoxy resin, it has a hardening starting temperature HT of about 150° C.
- the time between start and completion of hardening of the resin film 15 also differs depending on the characteristics of the resin film 15 .
- the characteristics of the resin film 15 shown in FIG. 2 are strictly conceptual. Accordingly, for example, if the amount of variation in the temperature per unit time changes, the characteristics of the resin film 15 will also change.
- the resin film 15 is deformed to cover the electronic component 13 and the mount substrate 11 in close contact uniformly with the surface 13 b of the electronic component 13 located farther from the mount substrate 11 and with the part of the surface 11 a of the mount substrate 11 located around the electronic component 13 . Thereafter, the temperature of the resin film 15 is further raised to cause the resin film 15 to fluidize, and then to harden. The resin film 15 is thereby adhered to the mount substrate 11 and fixed in shape. As described above, hardening of the resin film 15 causes a contracting force to occur. The contracting force of the resin film 15 acts to push the electronic component 13 toward the mount substrate 11 .
- the resin film 15 When the resin film 15 is sufficiently flexible at room temperature, the resin film 15 may be deformed at room temperature to define its shape, and then heated to harden the resin film 15 .
- the shape of the resin film 15 may be defined while softening the resin film 15 at its glass transition temperature or lower, and then it may be hardened by spending a relatively long period of time at the glass transition temperature or lower.
- the resin film 15 is formed of a resin that softens with ultraviolet light
- the resin film 15 may be softened by irradiation with ultraviolet light, instead of raising its temperature.
- the resin film 15 may be softened by both raising its temperature and irradiating it with ultraviolet light.
- the resin film 15 may be hardened by irradiation with ultraviolet light, instead of by raising its temperature.
- the resin film 15 may be hardened by both raising its temperature and irradiating it with ultraviolet light.
- connection electrodes 14 of the electronic component 13 and the patterned conductors 12 of the mount substrate 11 various methods are available for effecting electrical connection and mechanical bonding between the connection electrodes 14 of the electronic component 13 and the patterned conductors 12 of the mount substrate 11 .
- bonding methods are some examples of the methods for effecting electrical connection and mechanical bonding between the connection electrodes 14 of the electronic component 13 and the patterned conductors 12 of the mount substrate 11 (hereinafter simply referred to as bonding methods).
- FIG. 3 to FIG. 5 describe an example of a related-art bonding method for comparison with the embodiment of the invention.
- the portion where the connection electrode 14 of the electronic component 13 and the patterned conductor 12 of the mount substrate 11 are electrically connected and mechanically bonded to each other is shown larger than other portions.
- connection electrode 14 of the electronic component 13 there is provided a bump 14 A that is formed of gold, for example, and connected to a patterned conductor 17 of the electronic component 13 .
- the mount substrate 11 is provided with a connecting portion 12 A that is formed of gold, for example, and forms a part of the patterned conductor 12 .
- the bump 14 A and the connecting portion 12 A are bonded to each other by utilizing metallic bond, and are thereby electrically connected and mechanically bonded to each other.
- connection electrode 14 of the electronic component 13 there is provided a bump 14 B that is formed of gold, for example, and connected to the patterned conductor 17 of the electronic component 13 .
- the mount substrate 11 is provided with the connecting portion 12 A that is formed of gold, for example, and forms a part of the patterned conductor 12 .
- the bump 14 B and the connecting portion 12 A are electrically connected to each other with a conductive paste 18 .
- an underfill material 19 is filled in between the electronic component 13 and the mount substrate 11 . A contracting force of the underfill material 19 acts to attain stable mechanical bonding among the bump 14 B, the conductive paste 18 , and the connecting portion 12 A.
- connection electrode 14 of the electronic component 13 there is provided the bump 14 A that is formed of gold, for example, and connected to the patterned conductor 17 of the electronic component 13 .
- the mount substrate 11 is provided with the connecting portion 12 A that is formed of gold, for example, and forms a part of the patterned conductor 12 .
- the bump 14 A and the connecting portion 12 A are disposed to be in contact with each other, and are thereby electrically connected with each other.
- a bonding paste 20 which is non-conductive or anisotropically conductive, is injected into between the electronic component 13 and the mount substrate 11 around the bump 14 A and the connecting portion 12 A. A contracting force of the bonding paste 20 acts to attain stable mechanical bonding between the bump 14 A and the connecting portion 12 A.
- connection electrode 14 of the electronic component 13 and the patterned conductor 12 of the mount substrate 11 are electrically connected and mechanically bonded to each other is shown larger than other portions.
- connection electrode 14 of the electronic component 13 there is provided the bump 14 A that is formed of gold, for example, and connected to the patterned conductor 17 of the electronic component 13 .
- the mount substrate 11 is provided with the connecting portion 12 A that is formed of gold, for example, and forms a part of the patterned conductor 12 .
- the bump 14 A and the connecting portion 12 A are bonded to each other by utilizing metallic bond, and are thereby electrically connected and mechanically bonded to each other.
- This example is further provided with the resin film 15 according to the embodiment. A contracting force of the resin film 15 acts to reinforce the mechanical bonding between the bump 14 A and the connecting portion 12 A.
- connection electrode 14 of the electronic component 13 there is provided the bump 14 B that is formed of gold, for example, and connected to the patterned conductor 17 of the electronic component 13 .
- the mount substrate 11 is provided with the connecting portion 12 A that is formed of gold, for example, and forms a part of the patterned conductor 12 .
- the bump 14 B and the connecting portion 12 A are electrically connected to each other with the conductive paste 18 .
- This example is further provided with the resin film 15 according to the embodiment. A contracting force of the resin film 15 acts to attain stable mechanical bonding among the bump 14 B, the conductive paste 18 and the connecting portion 12 A, without using the underfill material 19 .
- connection electrode 14 of the electronic component 13 there is provided the bump 14 A that is formed of gold, for example, and connected to the patterned conductor 17 of the electronic component 13 .
- the mount substrate 11 is provided with the connecting portion 12 A that is formed of gold, for example, and forms a part of the patterned conductor 12 .
- the bump 14 A and the connecting portion 12 A are disposed to be in contact with each other, and are thereby electrically connected to each other.
- the bonding paste 20 which is non-conductive or anisotropically conductive, is injected into between the electronic component 13 and the mount substrate 11 around the bump 14 A and the connecting portion 12 A.
- a contracting force of the bonding paste 20 acts to attain stable mechanical bonding between the bump 14 A and the connecting portion 12 A.
- This example is further provided with the resin film 15 according to the embodiment.
- a contracting force of the resin film 15 acts to reinforce the mechanical bonding between the bump 14 A and the connecting portion 12 A.
- the bonding methods in the embodiment of the invention are not limited to those shown in FIG. 6 to FIG. 8, and it is possible to use almost all the conventional bonding methods for use with face-down bonding.
- the surface acoustic wave device 13 A shown in FIG. 9 comprises: a piezoelectric substrate 21 ; interdigitated electrodes 22 and patterned conductors 23 that are formed on one of surfaces of the piezoelectric substrate 21 ; and connection electrodes 24 formed at the ends of the patterned conductors 23 .
- the connection electrodes 24 correspond to the connection electrodes 14 shown in FIG. 1 and other figures.
- the surface acoustic wave device 13 A uses the surface acoustic wave generated by the interdigitated electrodes 22 for its basic operation, and functions as a band pass filter in this embodiment.
- connection electrode 24 denoted by symbol “IN” is an input terminal
- a connection electrode 24 denoted by symbol “OUT” is an output terminal
- connection electrodes 24 denoted by symbol “GND” are ground terminals.
- the region surrounded by a dashed line indicated by reference numeral 25 includes a surface acoustic wave propagation region, which has to be protected from intrusion of a sealing material or the like.
- the electronic device 10 may be manufactured one by one or a plurality of electronic devices 10 may be manufactured at the same time. Described below is the case of manufacturing a plurality of electronic devices 10 at the same time.
- the electronic component 13 is first disposed on the mount substrate 11 such that the surface 13 a of the electronic component 13 faces toward the surface 11 a of the mount substrate 11 , and then the connection electrodes 14 of the electronic component 13 are electrically connected and mechanically bonded to the patterned conductors 12 of the mount substrate 11 . Then, the resin film 15 , which has been formed substantially in the same planar shape as that of the surface 11 a of the mount substrate 11 , is placed over the electronic component 13 and the mount substrate 11 .
- the mount substrate 11 shown in FIG. 10 includes a portion that corresponds to a plurality of electronic components 13 .
- the mount substrate 11 is thus provided with a plurality of electronic components 13 disposed thereupon.
- the mount substrate 11 has regions where the plurality of electronic components 13 are disposed, and each of the regions has a hole 31 disposed at a center portion thereof.
- the resin film 15 softened by heating, a gas existing on the electronic-component- 13 side of the mount substrate 11 is sucked from the other side of the mount substrate 11 through the hole 31 of the mount substrate 11 .
- the gas mentioned here includes air, nitrogen gas, an inert gas and the like, depending on the atmosphere in which the processing is performed.
- the resin film 15 is thereby deformed to cover the electronic component 13 and the mount substrate 11 in close contact uniformly with the surface 13 b of the electronic component 13 located farther from the mount substrate 11 and with the part of the surface 11 a of the mount substrate 11 located around the electronic component 13 .
- the temperature of the resin film 15 is kept below the temperature at which it hardens.
- the shape of the resin film 15 can be easily defined by deforming the resin film 15 by sucking the gas existing on the electronic-component- 13 side of the mount substrate 11 from the other side of the mount substrate 11 through the hole 31 of the mount substrate 11 . Deforming the resin film 15 with the resin film 15 softened makes it easier to define the shape of the resin film 15 . If the resin film 15 is sufficiently flexible at room temperature, the resin film 15 may be deformed only by the aforementioned suction without heating.
- the resin film 15 is formed of a resin that softens with ultraviolet light
- the resin film 15 may be softened by irradiation with ultraviolet light, instead of raising its temperature.
- the resin film 15 may be softened by both raising its temperature and irradiating it with ultraviolet light.
- This embodiment employs a pressure-reducible heating furnace 32 as means for heating the resin film 15 and for sucking the gas existing on the electronic-component- 13 side of the mount substrate 11 from the other side of the mount substrate 11 .
- the heating furnace 32 has a heater 33 on which the mount substrate 11 is placed.
- the heater 33 heats the mount substrate 11 and the resin film 15 .
- the heater 33 has a hole 34 that communicates with the hole 31 of the mount substrate 11 .
- the mount substrate 11 and the resin film 15 are heated with the heater 33 to a temperature at which the resin film 15 hardens or higher. This causes the resin film 15 to become fluidized, and thereafter hardened. The resin film 15 is then adhered to the mount substrate 11 and fixed in shape.
- the resin film 15 is formed of a resin that hardens with ultraviolet light
- the resin film 15 may be hardened by irradiation with ultraviolet light, instead of raising its temperature.
- the resin film 15 may be hardened by both raising its temperature and irradiating it with ultraviolet light.
- FIG. 14 is a plan view illustrating the mount substrate 11 , the electronic components 13 , and the resin film 15 before the cutting step shown in FIG. 13.
- the method for manufacturing the electronic device 10 one by one is the same as that for manufacturing a plurality of electronic devices 10 at the same time, except that the aforementioned step of cutting the mount substrate 11 and the resin film 15 is unnecessary.
- the resin film 15 covers the electronic component 13 and the mount substrate 11 in close contact with the surface 13 b of the electronic component 13 that is farther from the mount substrate 11 and with the part of the surface 11 a of the mount substrate 11 located around the electronic component 13 , and is adhered to the mount substrate 11 .
- the resin film 15 reinforces the mechanical bonding between the connection electrodes 14 of the electronic component 13 and the patterned conductors 12 of the mount substrate 11 .
- no underfill material is interposed between the electronic component 13 and the mount substrate 11 .
- this embodiment makes it possible to improve the strength and stability of the mechanical bonding between the connection electrodes 14 of the electronic component 13 and the patterned conductors 12 of the mount substrate 11 , with a simple configuration and through simple steps, and without adversely affecting the operation of the electronic component 13 .
- the resin film 15 is deformed by sucking the gas existing on the electronic-component- 13 side of the mount substrate 11 from the other side of the mount substrate through the hole 31 formed in the mount substrate 11 . Therefore, according to this embodiment it is easy to define the shape of the resin film 15 .
- the resin film 15 is brought into close contact with the electronic component 13 and the mount substrate 11 by sucking the gas as described above.
- the resin film 15 is then heated to thereby cause the resin film 15 to fluidize, and thereafter to harden.
- the resin film 15 is then adhered to the mount substrate 11 . Accordingly, when the resin film 15 is adhered to the mount substrate 11 , the contracting force of the resin film 15 resulting from its hardening works to bring the resin film 15 into closer contact with the electronic component 13 and the mount substrate 11 .
- This embodiment therefore makes it possible to improve the strength and stability of the mechanical bonding between the connection electrodes 14 of the electronic component 13 and the patterned conductors 12 of the mount substrate 11 with higher reliability.
- the resin film 15 is used to seal the electronic component 13 , sealing of the electronic component 13 can be done with a simple configuration and through simple steps, without adversely affecting the operation of the electronic component 13 .
- This ensures the tolerance of the electronic device 10 to environment or the like.
- the hole 31 of the mount substrate 11 is provided at the center of the region where the electronic component 13 is disposed, the electronic component 13 can be kept in the sealed state by closing the hole 31 with the plug member 35 .
- the hole 31 need not be closed.
- the cavity 16 is provided between the surface 13 a of the electronic component 13 and the surface 11 a of the mount substrate 11 . This prevents the surface 13 a of the electronic component 13 from contacting other components or foreign materials, which can consequently eliminate possible adverse effects on the operation of the electronic device 13 . This is useful when the electronic component 13 is a surface acoustic wave device, an oscillator, or a high-frequency circuit component, in particular.
- this embodiment provides improved reliability of the electronic device 10 . Furthermore, since the embodiment uses the resin film 15 to seal the electronic component 13 , it is possible to reduce the size, weight and thickness of the electronic device 10 as compared with the case of sealing the electronic component 13 in a cap-like structure. Furthermore, using the resin film 15 to seal the electronic component 13 in the embodiment provides the aforementioned effects at low cost.
- the hole 31 of the mount substrate 11 is not limited to one that is specially provided for the sucking, but may be an existing hole such as a through hole.
- FIG. 15 is a cross-sectional view illustrating the electronic device 10 according to the embodiment where a through hole is employed as the hole 31 .
- the through hole acting as the hole 31 electrically connects the patterned conductors 12 disposed on the surface 11 a of the mount substrate 11 and a conductor 39 disposed on the other surface of the mount substrate 11 .
- the through hole is used as the hole 31 , it is not necessary to provide any special hole for the sucking in the mount substrate 11 .
- the electronic device 10 may be manufactured one by one or a plurality of electronic devices 10 may be manufactured at the same time. Described below is the case of manufacturing a plurality of electronic devices 10 at the same time.
- the electronic component 13 is first disposed on the mount substrate 11 such that the surface 13 a of the electronic component 13 faces toward the surface 11 a of the mount substrate 11 , and then the connection electrodes 14 of the electronic component 13 are electrically connected and mechanically bonded to the patterned conductors 12 of the mount substrate 11 . Then, the resin film 15 , which has been formed substantially in the same planar shape as that of the surface 11 a of the mount substrate 11 , is placed over the electronic component 13 and the mount substrate 11 .
- the mount substrate 11 shown in FIG. 16 includes a portion that corresponds to a plurality of electronic components 13 .
- the mount substrate 11 is thus provided with a plurality of electronic components 13 disposed thereupon.
- the mount substrate 11 has regions where the plurality of electronic components 13 are disposed, and a plurality of holes 31 are provided around each of the regions.
- the holes 31 may be provided either at two points opposite to each other with an electronic component 13 located at the center therebetween, or at four points by the four sides of the electronic component 13 .
- the resin film 15 softened by heating, the gas existing on the electronic-component- 13 side of the mount substrate 11 is sucked from the other side of the mount substrate 11 through the holes 31 in the mount substrate 11 .
- the resin film 15 is thereby deformed to cover the electronic component 13 and the mount substrate 11 in close contact uniformly with the surface 13 b of the electronic component 13 located farther from the mount substrate 11 and with the part of the surface 11 a of the mount substrate 11 located around the electronic component 13 .
- the temperature of the resin film 15 is kept below the temperature at which the resin film 15 hardens. If the resin film 15 is sufficiently flexible at room temperature, the resin film 15 may be deformed only by the aforementioned suction without heating.
- this embodiment employs the pressure-reducible heating furnace 32 as means for heating the resin film 15 and for sucking the gas existing on the electronic-component- 13 side of the mount substrate 11 from the other side of the mount substrate 11 .
- other means may also be employed as heating means or gas sucking means.
- the mount substrate 11 and the resin film 15 are heated with the heater 33 of the heating furnace 32 to a temperature at which the resin film 15 hardens or higher. This causes the resin film 15 to become fluidized, and thereafter hardened. The resin film 15 is then adhered to the mount substrate 11 and fixed in shape.
- the mount substrate 11 and the resin film 15 are cut at the positions indicated by reference numeral 41 , thereby providing completed individual electronic devices 10 .
- the holes 31 in the mount substrate 11 are closed with the resin film 15 in the step of adhering the resin film 15 to the mount substrate 11 , and therefore the state of sealing is maintained with reliability, without using the plug member 35 as used in the first embodiment for closing the holes 31 .
- the mount substrate 11 and the resin film 15 are cut such that holes 31 remain in the mount substrate 11 for each electronic device 10 .
- the mount substrate 11 and the resin film 15 may be cut at positions closer to the electronic component 13 than the holes 31 are, such that none of the holes 31 remain in the mount substrate 11 for each electronic device 10 .
- the holes 31 in the mount substrate 11 are not limited to ones that are specially provided for the sucking, but may be existing holes such as through holes.
- FIG. 20 is a cross-sectional view illustrating the electronic device 10 according to this embodiment where through holes are employed as the holes 31 .
- the through holes acting as the holes 31 electrically connect the patterned conductors 12 disposed on the surface 11 a of the mount substrate 11 and conductors 39 disposed on the other surface of the mount substrate 11 .
- the through holes are used as the holes 31 , it is not necessary to provide any special holes for the sucking in the mount substrate 11 .
- FIG. 21 to FIG. 25 describe a method of manufacturing an electronic device according to a third embodiment of the invention.
- the configuration of the electronic device according to this embodiment is the same as that of the first or second embodiment.
- the method of manufacturing the electronic device 10 includes the step of predetermining the relationship between processing conditions employed in the step of adhering the resin film 15 to the mount substrate 11 (hereinafter referred to as the adhering step) and a change in characteristics of the electronic component 13 between before and after the adhering step.
- the processing conditions are controlled based on the aforementioned relationship so as to attain desired characteristics of the electronic component 13 .
- the processing conditions may include at least one of a temperature of the resin film 15 as heated and a period of time over which the resin film 15 is heated.
- the resin film 15 may contain a hardening accelerator, and the processing conditions may also include the content of the hardening accelerator.
- the other steps in the method of manufacturing the electronic device 10 of this embodiment are the same as those of the first or second embodiment.
- the electronic component 13 is a surface acoustic wave device and the electronic device 10 is a band pass filter.
- the characteristics of the surface acoustic wave device acting as the electronic component 13 are reflected upon those of the band pass filter acting as the electronic device 10 such as the center frequency and the insertion loss in the pass band of the band pass filter.
- the following explanations employ the center frequency and the insertion loss in the pass band of the band pass filter to represent the characteristics of the electronic component 13 .
- predetermined is the relationship between the processing conditions for the adhering step and a change in the characteristic of the electronic component 13 between before and after the adhering step.
- FIG. 21 is a characteristic diagram illustrating an example of the results of measurements conducted to determine the relationship between the aforementioned processing conditions and change in the characteristics.
- FIG. 21 shows a change in the transmission characteristics of the band pass filter between before and after the adhering step.
- the horizontal axis represents frequency and the vertical axis represents S 21 parameter corresponding to the attenuation amount of the filter.
- the solid line indicates the transmission characteristics obtained before the electronic component 13 is sealed, that is, before the adhering step.
- the dotted line indicates the transmission characteristics obtained after the electronic component 13 has been sealed, that is, after the adhering step.
- the resin film 15 is formed of an epoxy-based resin, and the content of a hardening accelerator in the epoxy-based resin is 0.1 wt %.
- the resin film 15 in the adhering step the resin film 15 is heated at 180° C. for one hour. From FIG. 21, it can be seen that the center frequency in the pass band of the band pass filter changes between before and after the adhering step.
- FIG. 22 is a characteristic diagram illustrating another example of the results of measurements conducted to determine the relationship between the processing conditions for the adhering step and change in the characteristics of the electronic component 13 between before and after the adhering step.
- FIG. 22 shows changes in the transmission characteristics of the band pass filter between before and after the adhering step.
- the horizontal axis represents frequency and the vertical axis represents S 21 parameter.
- FIG. 22 shows in detail the transmission characteristics in the frequency range where the S 21 parameter has values from 0.0 to ⁇ 5.0 dB.
- the adhering step was carried under four different conditions, that is, by varying the number of times of the heat treatment, to measure the transmission characteristics of the band pass filter after the adhering step each time.
- the resin film 15 was heated at 180° C. for one hour.
- the resin film 15 is formed of an epoxy-based resin, and the content of a hardening accelerator in the epoxy-based resin is 0.1 wt %.
- the solid line indicates the transmission characteristics obtained before the electronic component 13 is sealed, that is, before the adhering step.
- the alternate long and short dashed lines indicate the transmission characteristics obtained after the adhering step in which the heat treatment was performed once.
- the chain double-dashed line indicates the transmission characteristics obtained after the adhering step in which the heat treatment was performed twice.
- the dashed line indicates the transmission characteristics obtained after the adhering step in which the heat treatment was performed three times.
- the dotted line indicates the transmission characteristics after the adhering step in which the heat treatment was performed four times.
- the larger the number of times of the heat treatment in the adhering step the greater the amount of change in the center frequency in the pass band of the band pass filter between before and after the adhering step.
- FIG. 23 is a characteristic diagram illustrating the relationship.
- the horizontal axis represents the amount of change in the center frequency f 0 and the vertical axis represents the amount of change in the S 21 parameter.
- the point indicated by symbol HO corresponds to the origin of FIG. 23, that is, to the center frequency f 0 and the S 21 parameter provided before the electronic component 13 is sealed.
- the point indicated by symbol H1 represents the amounts of changes in the center frequency f 0 and in the S 21 parameter between before and after the adhering step in which the heat treatment was performed once.
- the point indicated by symbol H2 represents the amounts of changes in the center frequency f 0 and in the S 21 parameter between before and after the adhering step in which the heat treatment was performed twice.
- the point indicated by symbol H3 represents the amounts of changes in the center frequency f 0 and in the S 21 parameter between before and after the adhering step in which the heat treatment was performed three times.
- the point indicated by symbol H4 represents the amounts of changes in the center frequency f 0 and in the S 21 parameter between before and after the adhering step in which the heat treatment was performed four times.
- the pass band is defined as the frequency band between the two frequencies at which the S 21 parameter takes on a value lower than that at the minimum insertion loss by 3 dB
- the center frequency is defined to be the center frequency of this pass band.
- both the amount of change in the center frequency f 0 and the amount of change in the S 21 parameter between before and after the adhering step increase with an increase in the number of times of the heat treatment performed in the adhering step, that is, with an increase in the time period of the heating.
- the center frequency f 0 shifts by about 2 MHz with one additional number of times of the heat treatment in the adhering step.
- FIG. 23 shows the relationship among the number of times of the heat treatment of the resin film 15 serving as the processing condition employed in the adhering step, and the amounts of changes in the center frequency f 0 and in the S 21 parameter indicating changes in the characteristics of the electronic component 13 between before and after the adhering step.
- FIG. 24 is a characteristic diagram illustrating still another example of the results of measurements conducted to determine the relationship between the processing conditions employed in the adhering step and change in the characteristics of the electronic component 13 between before and after the adhering step.
- determined was the relationship between the content of the hardening accelerator in the resin film 15 formed of an epoxy-based resin and the amount of change in the center frequency f 0 between before and after the adhering step.
- the resin film 15 was heated at 150° C. for one hour.
- the horizontal axis represents the content of the hardening accelerator and the vertical axis represents the amount of change in the center frequency f 0 .
- the black dots represent actual values of the measurements.
- the solid line represents the relationship between the content of the hardening accelerator and the amount of change in the center frequency f 0 , determined by the least square method based on the measurements. From FIG. 24, it can be seen that the amount of change in the center frequency f 0 varies depending on the content of the hardening accelerator. Thus, FIG. 24 shows the relationship between the content of the hardening accelerator serving as the processing condition in the adhering step and the amount of change in the center frequency f 0 indicating a change in the characteristics of the electronic component 13 between before and after the adhering step.
- FIG. 25 is a characteristic diagram illustrating still another example of the results of measurements conducted to determine the relationship between the processing conditions employed in the adhering step and change in the characteristics of the electronic component 13 between before and after the adhering step.
- the measurements were conducted to determine the relationships between the content of the hardening accelerator in the resin film 15 formed of an epoxy-based resin and the amount of change in the center frequency f 0 between before and after the adhering step in the cases where the resin film 15 was heated at 150° C. and at 180° C. in the adhering step.
- the other conditions for the measurements were the same as those for the measurements shown in FIG. 24.
- FIG. 25 represent the relationships between the content of the hardening accelerator and the amount of change in the center frequency f 0 , determined by the least square method based on the measurements. From FIG. 25, it can be seen that the amount of change in the center frequency f 0 varies depending on the content of the hardening accelerator and the temperature at which the resin film 15 is heated in the adhering step. Thus, FIG. 25 shows the relationship among the content of the hardening accelerator and the temperature at which the resin film 15 is heated, which serve as the processing conditions in the adhering step, and the amount of change in the center frequency f 0 indicating a change in the characteristics of the electronic component 13 between before and after the adhering step.
- the electronic device 10 is manufactured through controlling the processing conditions in the adhering step based on the relationships determined as described above, so as to attain desired characteristics of the electronic component 13 . More specifically, in this embodiment, the following two methods are available for attaining desired characteristics of the electronic component 13 in manufacturing the electronic device 10 .
- a first method is to compensate the characteristics of the electronic component 13 through controlling the processing conditions in the adhering step in manufacturing the electronic device 10 .
- this method is accomplished as follows. First, before the electronic component 13 is mounted on the mount substrate 11 , the center frequency in the pass band of the band pass filter, serving as an indicator of the characteristics of the electronic component 13 , is measured. If the measured center frequency is shifted from a desired frequency and the shift falls within a range that can be compensated by controlling the processing conditions in the adhering step, the shift in the center frequency is compensated by controlling the processing conditions in the adhering step. This makes it possible to bring the center frequency in the pass band of the band pass filter closer to the desired frequency.
- the electronic component 13 is fabricated in expectation of a change in the characteristics of the electronic component 13 between before and after the adhering step, so as to attain desired characteristics of the electronic component 13 after the adhering step.
- this method is accomplished as follows. First, the processing conditions to be employed in the adhering step are determined such that the amount of change in the center frequency f 0 between before and after the adhering step will fall within a predetermined amount. Then, in expectation of the change in the center frequency between before and after the adhering step, the electronic component 13 is fabricated so as to obtain a desired center frequency after the adhering step. This means that the electronic component 13 is fabricated such that the center frequency shifts from the desired frequency by the predetermined amount. The adhering step is then carried out under the predetermined conditions, thereby attaining a center frequency closer to the desired frequency.
- one electronic device may include a plurality of electronic components.
- the resin film is placed over the electronic component and the mount substrate, and, the gas existing on the electronic-component side of the mount substrate is sucked from the other side of the mount substrate through the hole provided in the mount substrate.
- the resin film is thereby deformed to cover the electronic component and the mount substrate in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component.
- the resin film is heated to be fluidized, and thereafter to be hardened.
- the resin film is then adhered to the mount substrate.
- the resin film reinforces the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate.
- the invention thus makes it possible to improve the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate, through simple steps and without adversely affecting the operation of the electronic component.
- the resin film is deformed by sucking the gas existing on the electronic-component side of the mount substrate from the other side of the mount substrate through the hole formed in the mount substrate. Therefore, according to the invention it is easy to define the shape of the resin film.
- the resin film is brought into close contact with the electronic component and the mount substrate by sucking the gas as described above, and the resin film is then heated to cause the resin film to fluidize, and thereafter to harden.
- the resin film is then adhered to the mount substrate. Therefore, according to the invention the resin film comes into highly close contact with the electronic component and the mount substrate, and as a result, the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate are improved with higher reliability.
- the electronic component may be sealed with the resin film. This makes it possible to seal the electronic component through simple steps, without adversely affecting the operation of the electronic component.
- a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate. In this case, it is possible to prevent the one of the surfaces of the electronic component from contacting other components or foreign materials, which can consequently eliminate possible adverse effects on the operation of the electronic device.
- the resin film may be deformed with the resin film softened in the step of deforming the resin film.
- the shape of the resin film is defined more easily.
- the hole formed in the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed, and the hole may be closed after the step of adhering the resin film. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- the hole formed in the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film in the step of adhering the resin film. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate. In this case, it is not necessary to provide the mount substrate with any special hole for sucking.
- the method of manufacturing the electronic device of the invention may further comprise the step of predetermining a relationship between a processing condition employed in the step of adhering the resin film and a change in characteristics of the electronic component between before and after the step of adhering the resin film, and, in the step of adhering the resin film, the processing condition may be controlled based on the relationship mentioned above, so as to obtain desired characteristics of the electronic component. In this case, it is possible to attain desired characteristics of the electronic component while adhering the resin film to the mount substrate by heating the resin film.
- the resin film is adhered to the mount substrate, covering the electronic component and the mount substrate in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component.
- the resin film acts to reinforce the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate. Accordingly, the invention makes it possible to improve the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate, with a simple configuration and without adversely affecting the operation of the electronic component.
- the electronic device of the invention makes it possible, in the manufacturing process thereof, to deform the resin film by sucking a gas existing on the electronic-component side of the mount substrate from the other side of the mount substrate through the hole formed in the mount substrate. Therefore, according to the invention it is easy to define the shape of the resin film.
- the resin film is brought into close contact with the electronic component and the mount substrate through the suction of the gas as described above, and is adhered to the mount substrate after being fluidized and thereafter hardened by heating. Therefore, according to the invention the resin film comes into highly close contact with the electronic component and the mount substrate, and as a result, the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate are improved with higher reliability.
- the electronic component may be sealed with the resin film.
- sealing of the electronic component is effected with a simple configuration and without adversely affecting the operation of the electronic component.
- a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate. In this case, it is possible to prevent the one of the surfaces of the electronic component from contacting other components or foreign materials, which can consequently eliminate possible adverse effects on the operation of the electronic device.
- the hole formed in the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed, and the hole may be closed with a plug member. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- the hole formed in the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate. In this case, it is not necessary to provide the mount substrate with any special hole for sucking.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
- Wire Bonding (AREA)
Abstract
In a method of manufacturing an electronic device, an electronic component and a mount substrate are disposed such that one of surfaces of the electronic component faces toward one of surfaces of the mount substrate, and a connection electrode of the electronic component is electrically connected and mechanically bond to a patterned conductor of the mount substrate. A resin film is then disposed on the electronic component and the mount substrate. A gas captured in between the resin film and the electronic component is sucked through a hole provided in the mount substrate from a side of the mount substrate opposite to the electronic component. The resin film is thereby deformed to closely contact the electronic component and the mount substrate. The resin film is then heated and adhered to the mount substrate.
Description
- 1. Field of the Invention
- The present invention relates to an electronic device comprising a mount substrate and an electronic component mounted on the mount substrate, and to a method of manufacturing such an electronic device.
- 2. Description of the Related Art
- Surface acoustic wave devices include interdigitated electrodes formed on a surface of a piezoelectric substrate. Surface acoustic wave devices are widely used as filters in mobile communication equipment such as cellular phones.
- An electronic component such as a semiconductor component is frequently used in the form of a package. The package is configured such that the electronic component is mounted on a mount substrate, connection electrodes of the electronic component are electrically connected to patterned conductors of the mount substrate, and portions connecting the connection electrodes of the electronic component and the patterned conductors of the mount substrate are sealed. The same holds true for the case where the electronic component is a surface acoustic wave device. In the present application, a device which comprises a mount substrate and an electronic component mounted on the mount substrate is referred to as an electronic device.
- For electronic devices, methods for electrically connecting the connection electrodes of the electronic component to the patterned conductors of the mount substrate are broadly divided into two: a face-down bonding and a face-up bonding. In the face-down bonding, the electronic component is placed such that the surface of the electronic component having the connection electrodes formed thereon faces toward the mount substrate. On the other hand, in the face-up bonding, the electronic component is placed such that the surface of the electronic component having the connection electrodes formed thereon faces away from the mount substrate. The face-down bonding is advantageous over the face-up bonding in terms of downsizing of the electronic device.
- In general, according to a conventional method of manufacturing an electronic device employing the face-down bonding, after electrically connecting the connection electrodes of the electronic component and the patterned conductors of the mount substrate, an underfill material is filled in between the electronic component and the mount substrate to seal the portions where the connection electrode of the electronic component and the patterned conductor of the mount substrate are electrically connected to each other.
- When a surface acoustic wave device is used as the electronic component, however, the aforementioned general method cannot be employed because of a problem typical of the surface acoustic wave device. The problem typical of the surface acoustic wave device derives from the fact that the surface acoustic wave device has interdigitated electrodes formed on a surface thereof. That is, while the surface acoustic wave device needs to be sealed in order to prevent the interdigitated electrodes from being contaminated by moisture or foreign materials such as dust particles, it is necessary to prevent a resin or the like for the sealing from touching the surface acoustic wave propagation region on the surface of the surface acoustic wave device so as not to adversely affect the operation of the surface acoustic wave device.
- Therefore, in a conventional method for manufacturing an electronic device comprising a surface acoustic wave device as its electronic component, after the connection electrode of the surface acoustic wave device is electrically connected to the patterned conductor of the mount substrate, the surface acoustic wave device is enclosed and sealed with a cap-like structure formed of ceramics or metal. There is another method available for manufacturing an electronic device comprising a surface acoustic wave device as its electronic component. In this method, after the connection electrode of the surface acoustic wave device is electrically connected to the patterned conductor of the mount substrate, the surface acoustic wave device is enclosed and sealed with a side-fill material.
- In each of Published Unexamined Japanese Patent Applications Heisei 10-125825, 2001-53092, and 2001-176995, disclosed is a method of manufacturing an electronic device comprising a chip-type electronic component mounted on a substrate.
- According to the method disclosed in Published Unexamined Japanese Patent Application Heisei 10-125825, the chip-type electronic component is first mounted on the substrate through flip chip bonding. Then, the electronic component is covered with a sealing film made of a resin. Then, the film is pressed against the substrate at around the electronic component with a stamping die to adhere the film to the substrate, thereby sealing the electronic component with the film. In Published Unexamined Japanese Patent Application Heisei 10-125825, disclosed are two methods for adhering the sealing film to the substrate: one making use of adhesiveness of the film and the other employing an adhesive.
- In the method disclosed in Published Unexamined Japanese Patent Application 2001-53092, the chip-type electronic component is first mounted on the substrate. Then, an adhesive is applied to areas of a flexible sheet and/or the substrate at which the sheet and the substrate are to be bonded to each other. The electronic component is then covered with the sheet. Then, a gas captured in a cavity defined by the sheet and the substrate is sucked through a small hole provided in the substrate. Thereafter, the sheet is pressed against the substrate using a shaping tool, thereby causing the adhesive to bond the sheet to the substrate.
- In the method disclosed in Published Unexamined Japanese Patent Application 2001-176995, the chip-type electronic component is first mounted on the substrate. Then, a deformed film is placed onto the electronic component. A gas captured therebetween is sucked through a hole provided in the substrate to fit the deformed film onto the electronic component and adhere the deformed film to the substrate. In Published Unexamined Japanese Patent Application 2001-176995, disclosed are two methods for adhering the deformed film to the substrate: one employing an adhesive and the other making use of the thermo-adhering property of the deformed film.
- Among the methods of manufacturing the electronic device comprising a surface acoustic wave device as its electronic component, the one in which the surface acoustic wave device is enclosed and sealed with a cap-like structure presents a problem in that it is difficult to downsize the electronic device. Another problem with this method is that it is impossible to improve the strength and stability of mechanical bonding between the connection electrode of the surface acoustic wave device and the patterned conductor of the mount substrate, because the aforementioned structure does not contribute to the mechanical bonding between the connection electrode of the surface acoustic wave device and the patterned conductor of the mount substrate.
- Among the methods of manufacturing the electronic device comprising a surface acoustic wave device as its electronic component, the one in which the surface acoustic wave device is enclosed and sealed with a side-fill material has a problem in that the side-fill material can enter the surface acoustic wave propagation region on the surface of the surface acoustic wave device.
- When the electronic device is an oscillator or a high-frequency circuit component, too, as in the case of the surface acoustic wave device, operation of the electronic component can be adversely affected by a sealing resin if the resin touches the surface of the electronic device. Accordingly, the aforementioned problems also arise when an oscillator or a high-frequency circuit component is used as the electronic component, as in the case of a surface acoustic wave device.
- On the other hand, according to the methods disclosed in Published Unexamined Japanese Patent Applications Heisei 10-125825, 2001-53092, and 2001-176995, it is possible to seal the electronic component without causing the sealing resin or the like to touch the surface of the electronic component.
- The method disclosed in Published Unexamined Japanese Patent Application Heisei 10-125825, however, involves mechanical driving of the stamping die, which requires large-scale equipment to manufacture the electronic device. The manufacturing process therefore becomes complicated.
- The method disclosed in Published Unexamined Japanese Patent Application 2001-53092 involves a cumbersome step of applying an adhesive to the areas of the sheet and/or the substrate at which the sheet and the substrate are to be bonded to each other.
- According to the method disclosed in Published Unexamined Japanese Patent Application 2001-176995, the deformed film is used to package the electronic component. In this publication, disclosed is a technique of fitting the deformed film onto the electronic component by suction through a hole provided on the substrate. However, the publication does not disclose that the film is deformed by the suction through the hole provided in the substrate. It is thus conceivable that the deformed film mentioned in this publication is a film that has been shaped in advance to fit the outer shape of the electronic component. Therefore, the method disclosed in Published Unexamined Japanese Patent Application 2001-176995 requires the step of preparing the deformed film, and this step is also cumbersome.
- For a band pass filter employing a surface acoustic wave device, the center frequency of its passband is set, for example, at around 1800 MHz. In this case, a permissible shift of the center frequency of an actual filter from the desired center frequency is about +/−1.2 MHz at maximum. The band pass filter employing a surface acoustic wave device thus requires its center frequency to be set with extremely high accuracy.
- On the other hand, in the case of manufacturing the electronic device through the steps of covering the surface acoustic wave device mounted on the substrate with a resin film, and then heating the film to thereby adhere the film to the substrate, there is a problem in that the processing for adhering the film may cause a change in characteristics of the surface acoustic wave device. This is conceivably because at the initial stage of heating the film at a high temperature, the volatile components in the resin of the film come out into the environment and deposit on the surface acoustic wave device. For a band pass filter employing a surface acoustic wave device, a change in the characteristics of the surface acoustic wave device can cause a shift of the center frequency in a passband of the filter, and a degradation in transmission characteristics of the filter such as an increase in the insertion loss, in particular.
- It is therefore a first object of the invention to provide a method of manufacturing an electronic device comprising a mount substrate and an electronic component mounted on the mount substrate which makes it possible to improve the strength and stability of mechanical bonding between a connection electrode of the electronic component and a patterned conductor of the mount substrate, through simple steps and without adversely affecting the operation of the electronic component.
- In addition to the aforementioned first object, a second object of the invention is to provide a method of manufacturing the electronic device which makes it possible to effect sealing of the electronic component through simple steps and without adversely affecting the operation of the electronic component.
- A third object of the invention is to provide an electronic device comprising a mount substrate and an electronic component mounted on the mount substrate which makes it possible to improve the strength and stability of mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate, with a simple configuration and without adversely affecting the operation of the electronic component.
- In addition to the aforementioned third object, a fourth object of the invention is to provide an electronic device which makes it possible to effect sealing of the electronic component with a simple configuration and without adversely affecting the operation of the electronic component.
- A method of the invention is provided for manufacturing an electronic device comprising: a mount substrate having a patterned conductor exposed on one of surfaces of the mount substrate; and an electronic component having a connection electrode formed on one of surfaces of the electronic component, the one of the surfaces of the electronic component that has the connection electrode formed thereon being disposed to face toward the one of the surfaces of the mount substrate, the connection electrode being electrically connected and mechanically bonded to the patterned conductor of the mount substrate.
- The method comprises the steps of:
- disposing the electronic component and the mount substrate such that the one of the surfaces of the electronic component faces toward the one of the surfaces of the mount substrate, and electrically connecting and mechanically bonding the connection electrode of the electronic component to the patterned conductor of the mount substrate;
- placing a resin film over the electronic component and the mount substrate;
- deforming the resin film by sucking a gas existing on an electronic-component side of the mount substrate from the other side of the mount substrate through a hole provided in the mount substrate, such that the resin film covers the electronic component and the mount substrate in close contact with a surface of the electronic component that is farther from the mount substrate and with a part of the one of the surfaces of the mount substrate, the part being located around the electronic component; and
- adhering the resin film to the mount substrate by heating the resin film to cause the resin film to fluidize and thereafter to harden.
- According to the method of manufacturing the electronic device of the invention, the resin film covers the electronic component and the mount substrate, being in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component, and is adhered to the mount substrate. The resin film acts to reinforce the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate.
- In the method of manufacturing the electronic device of the invention, the resin film may seal the electronic component. On the other hand, a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate.
- In the method of manufacturing the electronic device of the invention, the resin film may be deformed with the resin film softened in the step of deforming the resin film.
- In the method of manufacturing the electronic device of the invention, the hole formed in the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed. In this case, the method of manufacturing the electronic device may further comprise the step of closing the hole after the step of adhering the resin film.
- In the method of manufacturing the electronic device of the invention, the hole formed in the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film in the step of adhering the resin film.
- In the method of manufacturing the electronic device of the invention, the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate.
- The method of manufacturing the electronic device of the invention may further comprise the step of predetermining a relationship between a processing condition employed in the step of adhering the resin film and a change in characteristics of the electronic component between before and after the step of adhering the resin film, and, in the step of adhering the resin film, the processing condition may be controlled based on the relationship mentioned above, so as to obtain desired characteristics of the electronic component. In this case, the processing condition may include at least one of a temperature of the resin film as heated and a period of time over which the resin film is heated. The resin film may contain a hardening accelerator, and the processing condition may include a content of the hardening accelerator contained in the resin film.
- An electronic device according to the invention comprises: a mount substrate having a patterned conductor exposed on one of surfaces of the mount substrate; and an electronic component having a connection electrode formed on one of surfaces of the electronic component, the one of the surfaces of the electronic component that has the connection electrode formed thereon being disposed to face toward the one of the surfaces of the mount substrate, the connection electrode being electrically connected and mechanically bonded to the patterned conductor of the mount substrate; and a resin film that covers the electronic component and the mount substrate in close contact with a surface of the electronic component that is farther from the mount substrate and with a part of the one of the surfaces of the mount substrate, the part being located around the electronic component, the resin film being adhered to the mount substrate after having been fluidized and thereafter hardened by heating.
- The mount substrate has a hole used to suck therethrough a gas existing on the electronic-component side of the mount substrate from the other side of the mount substrate to thereby define a shape of the resin film.
- According to the electronic device of the invention, the resin film covers the electronic component and the mount substrate, being in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component, and is adhered to the mount substrate. The resin film acts to reinforce the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate.
- In the electronic device of the invention, the resin film may seal the electronic component. On the other hand, a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate.
- In the electronic device of the invention, the hole of the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed. In this case, the electronic device may further comprise a plug member for closing the hole of the mount substrate.
- In the electronic device of the invention, the hole of the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film.
- In the electronic device of the invention, the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate.
- Other and further objects, features and advantages of the invention will appear more fully from the following description.
- FIG. 1 is a cross-sectional view illustrating an electronic device according to a first embodiment of the invention.
- FIG. 2 is an explanatory view conceptually illustrating an example of characteristics of a resin film used in the first embodiment of the invention.
- FIG. 3 is a cross-sectional view illustrating an example of a related-art bonding method shown for comparison with the first embodiment of the invention.
- FIG. 4 is a cross-sectional view illustrating another example of a related-art bonding method shown for comparison with the first embodiment of the invention.
- FIG. 5 is a cross-sectional view illustrating still another example of a related-art bonding method shown for comparison with the first embodiment of the invention.
- FIG. 6 is a cross-sectional view illustrating an example of a bonding method employed in the first embodiment of the invention.
- FIG. 7 is a cross-sectional view illustrating another example of the bonding method employed in the first embodiment of the invention.
- FIG. 8 is a cross-sectional view illustrating still another example of the bonding method employed in the first embodiment of the invention.
- FIG. 9 is a plan view illustrating an example of a surface acoustic wave device employed as an electronic component in the first embodiment of the invention.
- FIG. 10 is an explanatory view illustrating a step of a method of manufacturing the electronic device according to the first embodiment of the invention.
- FIG. 11 is an explanatory view illustrating a step that follows FIG. 10.
- FIG. 12 is an explanatory view illustrating a step that follows FIG. 11.
- FIG. 13 is an explanatory view illustrating a step that follows FIG. 12.
- FIG. 14 is a plan view illustrating the mount substrate, the electronic component and the resin film before the cutting step shown in FIG. 13.
- FIG. 15 is a cross-sectional view illustrating the electronic device according to the first embodiment of the invention, where a through hole is employed as a hole for sucking.
- FIG. 16 is an explanatory view illustrating a step of a method of manufacturing an electronic device according to a second embodiment of the invention.
- FIG. 17 is an explanatory view illustrating a step that follows FIG. 16.
- FIG. 18 is an explanatory view illustrating a step that follows FIG. 17.
- FIG. 19 is an explanatory view illustrating a step that follows FIG. 18.
- FIG. 20 is a cross-sectional view illustrating the electronic device according to the second embodiment of the invention, where a through hole is employed as a hole for sucking.
- FIG. 21 is a characteristic diagram illustrating an example of transmission characteristics of a band pass filter in a third embodiment of the invention.
- FIG. 22 is a characteristic diagram illustrating another example of the transmission characteristics of the band pass filter in the third embodiment of the invention.
- FIG. 23 is a characteristic diagram illustrating the relationship among the number of times of heat treatment, the amount of change in center frequency, and the amount of change in S21 parameter in the third embodiment of the invention.
- FIG. 24 is a characteristic diagram illustrating the relationship between the content of a hardening accelerator and the amount of change in center frequency in the third embodiment of the invention.
- FIG. 25 is a characteristic diagram illustrating the relationship among the content of the hardening accelerator and temperature at which the resin film is heated, and the amount of change in center frequency in the third embodiment of the invention.
- Embodiments of the invention will now be described in detail with reference to accompanying drawings.
- [First Embodiment]
- Reference is now made to FIG. 1 to describe a configuration of an electronic device according to a first embodiment of the invention. An
electronic device 10 according to this embodiment comprises amount substrate 11 having patternedconductors 12 that are patterned into predetermined shapes and exposed on asurface 11 a of themount substrate 11, and anelectronic component 13 havingconnection electrodes 14 formed on asurface 13 a thereof. Thesurface 13 a of the electronic component, on which theconnection electrodes 14 are formed, is disposed to face toward thesurface 11 a of themount substrate 11, and theconnection electrodes 14 are electrically connected and mechanically bonded to the patternedconductors 12 of themount substrate 11. Theelectronic device 10 further comprises aresin film 15 that is adhered to thesubstrate 11. Theresin film 15 covers theelectronic component 13 and themount substrate 11 in close contact with asurface 13 b of theelectronic component 13 that is located farther from themount substrate 11 and with a part of thesurface 11 a of themount substrate 11, the part being located around theelectronic component 13. - The
mount substrate 11 is formed of glass, resin, ceramics or the like. Theelectronic component 13 may be, for example, a surface acoustic wave device, an oscillator, or a high-frequency circuit component, or may be other electronic components. As described in the foregoing, theelectronic component 13 is mounted on themount substrate 11 through face-down bonding such that thesurface 13 a having theconnection electrodes 14 formed thereon faces toward themount substrate 11. There is formed acavity 16 in between thesurface 13 a of theelectronic component 13 and thesurface 11 a of themount substrate 11. - The
surface 13 b of theelectronic component 13 farther from themount substrate 11 is covered with theresin film 15 with no space left therebetween. The part of thesurface 11 a of themount substrate 11 located around theelectronic component 13 is also covered with theresin film 15 with no space left therebetween. Theresin film 15 seals the entireelectronic component 13 including the portions where theconnection electrodes 14 of theelectronic component 13 and the patternedconductors 12 of themount substrate 11 are electrically connected to each other. - For example, the
resin film 15 is formed of a thermosetting resin such as an epoxy resin. Theresin film 15 has a thickness of 50 to 150 μm, for example. - Now, a method of manufacturing the
electronic device 10 according to this embodiment will be briefly described. The method of manufacturing theelectronic device 10 includes the steps of: disposing theelectronic component 13 and themount substrate 11 such that thesurface 13 a of theelectronic component 13 faces toward thesurface 11 a of themount substrate 11, and electrically connecting and mechanically bonding theconnection electrodes 14 of theelectronic component 13 to the patternedconductors 12 of themount substrate 11; and placing theresin film 15 such that theresin film 15 covers theelectronic component 13 and themount substrate 11 in close contact with thesurface 13 b of theelectronic component 13 located farther from themount substrate 11 and with the part of thesurface 11 a of themount substrate 11 located around theelectronic component 13, and adhering theresin film 15 to themount substrate 11. - Reference is now made to FIG. 2 to conceptually describe an example of the characteristics of the
resin film 15 used in this embodiment. In FIG. 2, white dots and solid lines indicate the relationship between temperature of theresin film 15 and its length in a given direction. In FIG. 2, black dots and a dashed line indicate the relationship between temperature of a resin such as a BT (Bismaleimide Triazine) resin, which is stable in shape against variations in temperature, and its length in a given direction, for comparison with the characteristics of theresin film 15. As shown byreference numeral 110, the resin that is stable in shape against variations in temperature varies its length substantially linearly with changes in temperature. - The
resin film 15 maintains the shape of a film at room temperature RT. As shown byreference numeral 101, as the temperature of theresin film 15 increases from the room temperature RT to its glass transition temperature TG, theresin film 15 is gradually softened while expanding so as to vary its length substantially linearly with changes in the temperature. As shown byreference numeral 102, as the temperature of theresin film 15 increases from its glass transition temperature TG to its hardening starting temperature HT, theresin film 15 becomes fluidized and expands suddenly. As shown byreference numeral 103, when theresin film 15 is heated to a temperature equal to or greater than the hardening starting temperature HT, theresin film 15 starts hardening. As shown byreference numeral 104, when theresin film 15 has completely hardened, theresin film 15 contracts. At this stage, a force acting to contract the resin film 15 (hereinafter referred to as the contracting force) is produced. As shown byreference numeral 105, after theresin film 15 has completely hardened, theresin film 15 is now stable in shape against variations in temperature and will not soften or fluidize again even if the temperature rises. The hardening starting temperature HT is about 150 to 200° C., for example, although it differs depending on characteristics of theresin film 15. For example, if theresin film 15 is formed of an epoxy resin, it has a hardening starting temperature HT of about 150° C. The time between start and completion of hardening of theresin film 15 also differs depending on the characteristics of theresin film 15. - The characteristics of the
resin film 15 shown in FIG. 2 are strictly conceptual. Accordingly, for example, if the amount of variation in the temperature per unit time changes, the characteristics of theresin film 15 will also change. - In the method of manufacturing the
electronic device 10 according to this embodiment, for example, with the resin film softened by raising its temperature, theresin film 15 is deformed to cover theelectronic component 13 and themount substrate 11 in close contact uniformly with thesurface 13 b of theelectronic component 13 located farther from themount substrate 11 and with the part of thesurface 11 a of themount substrate 11 located around theelectronic component 13. Thereafter, the temperature of theresin film 15 is further raised to cause theresin film 15 to fluidize, and then to harden. Theresin film 15 is thereby adhered to themount substrate 11 and fixed in shape. As described above, hardening of theresin film 15 causes a contracting force to occur. The contracting force of theresin film 15 acts to push theelectronic component 13 toward themount substrate 11. This reinforces the mechanical bonding between theconnection electrodes 14 of theelectronic component 13 and the patternedconductors 12 of themount substrate 11 to make it more reliable. The contraction of theresin film 15 also causes theresin film 15 to come into closer contact with theelectronic component 13 and themount substrate 11. - When the
resin film 15 is sufficiently flexible at room temperature, theresin film 15 may be deformed at room temperature to define its shape, and then heated to harden theresin film 15. - Alternatively, the shape of the
resin film 15 may be defined while softening theresin film 15 at its glass transition temperature or lower, and then it may be hardened by spending a relatively long period of time at the glass transition temperature or lower. - If the
resin film 15 is formed of a resin that softens with ultraviolet light, theresin film 15 may be softened by irradiation with ultraviolet light, instead of raising its temperature. Alternatively, theresin film 15 may be softened by both raising its temperature and irradiating it with ultraviolet light. - On the other hand, if the
resin film 15 is formed of a resin that hardens with ultraviolet light, theresin film 15 may be hardened by irradiation with ultraviolet light, instead of by raising its temperature. Alternatively, theresin film 15 may be hardened by both raising its temperature and irradiating it with ultraviolet light. - In this embodiment, various methods are available for effecting electrical connection and mechanical bonding between the
connection electrodes 14 of theelectronic component 13 and the patternedconductors 12 of themount substrate 11. Now, described below are some examples of the methods for effecting electrical connection and mechanical bonding between theconnection electrodes 14 of theelectronic component 13 and the patternedconductors 12 of the mount substrate 11 (hereinafter simply referred to as bonding methods). - Reference is now made to FIG. 3 to FIG. 5 to describe an example of a related-art bonding method for comparison with the embodiment of the invention. In FIG. 3 to FIG. 5, the portion where the
connection electrode 14 of theelectronic component 13 and the patternedconductor 12 of themount substrate 11 are electrically connected and mechanically bonded to each other is shown larger than other portions. - In the example shown in FIG. 3, as the
connection electrode 14 of theelectronic component 13, there is provided abump 14A that is formed of gold, for example, and connected to a patternedconductor 17 of theelectronic component 13. On the other hand, themount substrate 11 is provided with a connectingportion 12A that is formed of gold, for example, and forms a part of the patternedconductor 12. In this example, thebump 14A and the connectingportion 12A are bonded to each other by utilizing metallic bond, and are thereby electrically connected and mechanically bonded to each other. - In the example shown in FIG. 4, as the
connection electrode 14 of theelectronic component 13, there is provided abump 14B that is formed of gold, for example, and connected to the patternedconductor 17 of theelectronic component 13. On the other hand, themount substrate 11 is provided with the connectingportion 12A that is formed of gold, for example, and forms a part of the patternedconductor 12. In this example, thebump 14B and the connectingportion 12A are electrically connected to each other with aconductive paste 18. Then, anunderfill material 19 is filled in between theelectronic component 13 and themount substrate 11. A contracting force of theunderfill material 19 acts to attain stable mechanical bonding among thebump 14B, theconductive paste 18, and the connectingportion 12A. - In the example shown in FIG. 5, as the
connection electrode 14 of theelectronic component 13, there is provided thebump 14A that is formed of gold, for example, and connected to the patternedconductor 17 of theelectronic component 13. On the other hand, themount substrate 11 is provided with the connectingportion 12A that is formed of gold, for example, and forms a part of the patternedconductor 12. In this example, thebump 14A and the connectingportion 12A are disposed to be in contact with each other, and are thereby electrically connected with each other. Abonding paste 20, which is non-conductive or anisotropically conductive, is injected into between theelectronic component 13 and themount substrate 11 around thebump 14A and the connectingportion 12A. A contracting force of thebonding paste 20 acts to attain stable mechanical bonding between thebump 14A and the connectingportion 12A. - Reference is now made to FIG. 6 to FIG. 8 to describe the bonding method employed in the embodiment. In FIG. 6 to FIG. 8, the portion where the
connection electrode 14 of theelectronic component 13 and the patternedconductor 12 of themount substrate 11 are electrically connected and mechanically bonded to each other is shown larger than other portions. - In the example shown in FIG. 6, like the example shown in FIG. 3, as the
connection electrode 14 of theelectronic component 13, there is provided thebump 14A that is formed of gold, for example, and connected to the patternedconductor 17 of theelectronic component 13. On the other hand, themount substrate 11 is provided with the connectingportion 12A that is formed of gold, for example, and forms a part of the patternedconductor 12. Thebump 14A and the connectingportion 12A are bonded to each other by utilizing metallic bond, and are thereby electrically connected and mechanically bonded to each other. This example is further provided with theresin film 15 according to the embodiment. A contracting force of theresin film 15 acts to reinforce the mechanical bonding between thebump 14A and the connectingportion 12A. - In the example shown in FIG. 7, like the example shown in FIG. 4, as the
connection electrode 14 of theelectronic component 13, there is provided thebump 14B that is formed of gold, for example, and connected to the patternedconductor 17 of theelectronic component 13. On the other hand, themount substrate 11 is provided with the connectingportion 12A that is formed of gold, for example, and forms a part of the patternedconductor 12. Thebump 14B and the connectingportion 12A are electrically connected to each other with theconductive paste 18. This example is further provided with theresin film 15 according to the embodiment. A contracting force of theresin film 15 acts to attain stable mechanical bonding among thebump 14B, theconductive paste 18 and the connectingportion 12A, without using theunderfill material 19. - In the example shown in FIG. 8, like the example shown in FIG. 5, as the
connection electrode 14 of theelectronic component 13, there is provided thebump 14A that is formed of gold, for example, and connected to the patternedconductor 17 of theelectronic component 13. On the other hand, themount substrate 11 is provided with the connectingportion 12A that is formed of gold, for example, and forms a part of the patternedconductor 12. Thebump 14A and the connectingportion 12A are disposed to be in contact with each other, and are thereby electrically connected to each other. Thebonding paste 20, which is non-conductive or anisotropically conductive, is injected into between theelectronic component 13 and themount substrate 11 around thebump 14A and the connectingportion 12A. A contracting force of thebonding paste 20 acts to attain stable mechanical bonding between thebump 14A and the connectingportion 12A. This example is further provided with theresin film 15 according to the embodiment. A contracting force of theresin film 15 acts to reinforce the mechanical bonding between thebump 14A and the connectingportion 12A. - The bonding methods in the embodiment of the invention are not limited to those shown in FIG. 6 to FIG. 8, and it is possible to use almost all the conventional bonding methods for use with face-down bonding.
- Reference is now made to FIG. 9 to describe an example of a surface
acoustic wave device 13A employed as theelectronic component 13. The surfaceacoustic wave device 13A shown in FIG. 9 comprises: apiezoelectric substrate 21; interdigitatedelectrodes 22 and patternedconductors 23 that are formed on one of surfaces of thepiezoelectric substrate 21; andconnection electrodes 24 formed at the ends of the patternedconductors 23. Theconnection electrodes 24 correspond to theconnection electrodes 14 shown in FIG. 1 and other figures. The surfaceacoustic wave device 13A uses the surface acoustic wave generated by the interdigitatedelectrodes 22 for its basic operation, and functions as a band pass filter in this embodiment. - In FIG. 9, a
connection electrode 24 denoted by symbol “IN” is an input terminal, aconnection electrode 24 denoted by symbol “OUT” is an output terminal, andconnection electrodes 24 denoted by symbol “GND” are ground terminals. Additionally, in FIG. 9, the region surrounded by a dashed line indicated byreference numeral 25 includes a surface acoustic wave propagation region, which has to be protected from intrusion of a sealing material or the like. - Reference is now made to FIG. 10 to FIG. 14 to describe the method of manufacturing the
electronic device 10 according to the embodiment in detail. In the embodiment, theelectronic device 10 may be manufactured one by one or a plurality ofelectronic devices 10 may be manufactured at the same time. Described below is the case of manufacturing a plurality ofelectronic devices 10 at the same time. - In the method of manufacturing the electronic device according to the embodiment, as shown in FIG. 10, the
electronic component 13 is first disposed on themount substrate 11 such that thesurface 13 a of theelectronic component 13 faces toward thesurface 11 a of themount substrate 11, and then theconnection electrodes 14 of theelectronic component 13 are electrically connected and mechanically bonded to the patternedconductors 12 of themount substrate 11. Then, theresin film 15, which has been formed substantially in the same planar shape as that of thesurface 11 a of themount substrate 11, is placed over theelectronic component 13 and themount substrate 11. - The
mount substrate 11 shown in FIG. 10 includes a portion that corresponds to a plurality ofelectronic components 13. Themount substrate 11 is thus provided with a plurality ofelectronic components 13 disposed thereupon. In this embodiment, themount substrate 11 has regions where the plurality ofelectronic components 13 are disposed, and each of the regions has ahole 31 disposed at a center portion thereof. - Then, as shown in FIG. 11, with the
resin film 15 softened by heating, a gas existing on the electronic-component-13 side of themount substrate 11 is sucked from the other side of themount substrate 11 through thehole 31 of themount substrate 11. The gas mentioned here includes air, nitrogen gas, an inert gas and the like, depending on the atmosphere in which the processing is performed. Theresin film 15 is thereby deformed to cover theelectronic component 13 and themount substrate 11 in close contact uniformly with thesurface 13 b of theelectronic component 13 located farther from themount substrate 11 and with the part of thesurface 11 a of themount substrate 11 located around theelectronic component 13. At this stage, the temperature of theresin film 15 is kept below the temperature at which it hardens. Thus, the shape of theresin film 15 can be easily defined by deforming theresin film 15 by sucking the gas existing on the electronic-component-13 side of themount substrate 11 from the other side of themount substrate 11 through thehole 31 of themount substrate 11. Deforming theresin film 15 with theresin film 15 softened makes it easier to define the shape of theresin film 15. If theresin film 15 is sufficiently flexible at room temperature, theresin film 15 may be deformed only by the aforementioned suction without heating. - If the
resin film 15 is formed of a resin that softens with ultraviolet light, theresin film 15 may be softened by irradiation with ultraviolet light, instead of raising its temperature. Alternatively, theresin film 15 may be softened by both raising its temperature and irradiating it with ultraviolet light. - This embodiment employs a pressure-
reducible heating furnace 32 as means for heating theresin film 15 and for sucking the gas existing on the electronic-component-13 side of themount substrate 11 from the other side of themount substrate 11. However, other means may also be employed as heating means or gas sucking means. Theheating furnace 32 has aheater 33 on which themount substrate 11 is placed. Theheater 33 heats themount substrate 11 and theresin film 15. Theheater 33 has ahole 34 that communicates with thehole 31 of themount substrate 11. Exhausting the gas present in theheating furnace 32 to reduce the pressure therein causes the gas existing on the electronic-component13 side of themount substrate 11 to be sucked from the other side of themount substrate 11 through thehole 34 of theheater 33 and thehole 31 of themount substrate 11. - Then, as shown in FIG. 12, the
mount substrate 11 and theresin film 15 are heated with theheater 33 to a temperature at which theresin film 15 hardens or higher. This causes theresin film 15 to become fluidized, and thereafter hardened. Theresin film 15 is then adhered to themount substrate 11 and fixed in shape. - If the
resin film 15 is formed of a resin that hardens with ultraviolet light, theresin film 15 may be hardened by irradiation with ultraviolet light, instead of raising its temperature. Alternatively, theresin film 15 may be hardened by both raising its temperature and irradiating it with ultraviolet light. - Then, as shown in FIG. 13, the
hole 31 of themount substrate 11 is closed with aplug member 35 formed of a sealing material or the like, as required. Then, themount substrate 11 and theresin film 15 are cut at the position shown byreference numeral 41 in FIG. 13, thereby providing completed individualelectronic devices 10. FIG. 14 is a plan view illustrating themount substrate 11, theelectronic components 13, and theresin film 15 before the cutting step shown in FIG. 13. The method for manufacturing theelectronic device 10 one by one is the same as that for manufacturing a plurality ofelectronic devices 10 at the same time, except that the aforementioned step of cutting themount substrate 11 and theresin film 15 is unnecessary. - As described above, in the
electronic device 10 and the method of manufacturing the same according to this embodiment, theresin film 15 covers theelectronic component 13 and themount substrate 11 in close contact with thesurface 13 b of theelectronic component 13 that is farther from themount substrate 11 and with the part of thesurface 11 a of themount substrate 11 located around theelectronic component 13, and is adhered to themount substrate 11. Theresin film 15 reinforces the mechanical bonding between theconnection electrodes 14 of theelectronic component 13 and the patternedconductors 12 of themount substrate 11. In this embodiment, no underfill material is interposed between theelectronic component 13 and themount substrate 11. Accordingly, this embodiment makes it possible to improve the strength and stability of the mechanical bonding between theconnection electrodes 14 of theelectronic component 13 and the patternedconductors 12 of themount substrate 11, with a simple configuration and through simple steps, and without adversely affecting the operation of theelectronic component 13. - Furthermore, in this embodiment, the
resin film 15 is deformed by sucking the gas existing on the electronic-component-13 side of themount substrate 11 from the other side of the mount substrate through thehole 31 formed in themount substrate 11. Therefore, according to this embodiment it is easy to define the shape of theresin film 15. - In this embodiment, the
resin film 15 is brought into close contact with theelectronic component 13 and themount substrate 11 by sucking the gas as described above. Theresin film 15 is then heated to thereby cause theresin film 15 to fluidize, and thereafter to harden. Theresin film 15 is then adhered to themount substrate 11. Accordingly, when theresin film 15 is adhered to themount substrate 11, the contracting force of theresin film 15 resulting from its hardening works to bring theresin film 15 into closer contact with theelectronic component 13 and themount substrate 11. This embodiment therefore makes it possible to improve the strength and stability of the mechanical bonding between theconnection electrodes 14 of theelectronic component 13 and the patternedconductors 12 of themount substrate 11 with higher reliability. - Furthermore, in this embodiment, since the
resin film 15 is used to seal theelectronic component 13, sealing of theelectronic component 13 can be done with a simple configuration and through simple steps, without adversely affecting the operation of theelectronic component 13. This ensures the tolerance of theelectronic device 10 to environment or the like. Even if thehole 31 of themount substrate 11 is provided at the center of the region where theelectronic component 13 is disposed, theelectronic component 13 can be kept in the sealed state by closing thehole 31 with theplug member 35. On the other hand, when thehole 31 is so small as not to affect the sealed state of theelectronic component 13, thehole 31 need not be closed. - Furthermore, according to this embodiment, the
cavity 16 is provided between thesurface 13 a of theelectronic component 13 and thesurface 11 a of themount substrate 11. This prevents thesurface 13 a of theelectronic component 13 from contacting other components or foreign materials, which can consequently eliminate possible adverse effects on the operation of theelectronic device 13. This is useful when theelectronic component 13 is a surface acoustic wave device, an oscillator, or a high-frequency circuit component, in particular. - With these features, this embodiment provides improved reliability of the
electronic device 10. Furthermore, since the embodiment uses theresin film 15 to seal theelectronic component 13, it is possible to reduce the size, weight and thickness of theelectronic device 10 as compared with the case of sealing theelectronic component 13 in a cap-like structure. Furthermore, using theresin film 15 to seal theelectronic component 13 in the embodiment provides the aforementioned effects at low cost. - In the embodiment, the
hole 31 of themount substrate 11 is not limited to one that is specially provided for the sucking, but may be an existing hole such as a through hole. FIG. 15 is a cross-sectional view illustrating theelectronic device 10 according to the embodiment where a through hole is employed as thehole 31. In theelectronic device 10 shown in FIG. 15, the through hole acting as thehole 31 electrically connects the patternedconductors 12 disposed on thesurface 11 a of themount substrate 11 and aconductor 39 disposed on the other surface of themount substrate 11. When the through hole is used as thehole 31, it is not necessary to provide any special hole for the sucking in themount substrate 11. - [Second Embodiment]
- Reference is now made to FIG. 16 to FIG. 20 to describe a method of manufacturing an electronic device according to a second embodiment of the invention. In this embodiment, like the first embodiment, the
electronic device 10 may be manufactured one by one or a plurality ofelectronic devices 10 may be manufactured at the same time. Described below is the case of manufacturing a plurality ofelectronic devices 10 at the same time. - In the method of manufacturing the electronic device according to the embodiment, as shown in FIG. 16, the
electronic component 13 is first disposed on themount substrate 11 such that thesurface 13 a of theelectronic component 13 faces toward thesurface 11 a of themount substrate 11, and then theconnection electrodes 14 of theelectronic component 13 are electrically connected and mechanically bonded to the patternedconductors 12 of themount substrate 11. Then, theresin film 15, which has been formed substantially in the same planar shape as that of thesurface 11 a of themount substrate 11, is placed over theelectronic component 13 and themount substrate 11. - The
mount substrate 11 shown in FIG. 16 includes a portion that corresponds to a plurality ofelectronic components 13. Themount substrate 11 is thus provided with a plurality ofelectronic components 13 disposed thereupon. In this embodiment, themount substrate 11 has regions where the plurality ofelectronic components 13 are disposed, and a plurality ofholes 31 are provided around each of the regions. For example, theholes 31 may be provided either at two points opposite to each other with anelectronic component 13 located at the center therebetween, or at four points by the four sides of theelectronic component 13. - Then, as shown in FIG. 17, with the
resin film 15 softened by heating, the gas existing on the electronic-component-13 side of themount substrate 11 is sucked from the other side of themount substrate 11 through theholes 31 in themount substrate 11. Theresin film 15 is thereby deformed to cover theelectronic component 13 and themount substrate 11 in close contact uniformly with thesurface 13 b of theelectronic component 13 located farther from themount substrate 11 and with the part of thesurface 11 a of themount substrate 11 located around theelectronic component 13. At this stage, the temperature of theresin film 15 is kept below the temperature at which theresin film 15 hardens. If theresin film 15 is sufficiently flexible at room temperature, theresin film 15 may be deformed only by the aforementioned suction without heating. - Like the first embodiment, this embodiment employs the pressure-
reducible heating furnace 32 as means for heating theresin film 15 and for sucking the gas existing on the electronic-component-13 side of themount substrate 11 from the other side of themount substrate 11. However, other means may also be employed as heating means or gas sucking means. - Then, as shown in FIG. 18, the
mount substrate 11 and theresin film 15 are heated with theheater 33 of theheating furnace 32 to a temperature at which theresin film 15 hardens or higher. This causes theresin film 15 to become fluidized, and thereafter hardened. Theresin film 15 is then adhered to themount substrate 11 and fixed in shape. - Then, as shown in FIG. 19, the
mount substrate 11 and theresin film 15 are cut at the positions indicated byreference numeral 41, thereby providing completed individualelectronic devices 10. In this embodiment, theholes 31 in themount substrate 11 are closed with theresin film 15 in the step of adhering theresin film 15 to themount substrate 11, and therefore the state of sealing is maintained with reliability, without using theplug member 35 as used in the first embodiment for closing theholes 31. - In FIG. 19, the
mount substrate 11 and theresin film 15 are cut such that holes 31 remain in themount substrate 11 for eachelectronic device 10. However, themount substrate 11 and theresin film 15 may be cut at positions closer to theelectronic component 13 than theholes 31 are, such that none of theholes 31 remain in themount substrate 11 for eachelectronic device 10. - In this embodiment, the
holes 31 in themount substrate 11 are not limited to ones that are specially provided for the sucking, but may be existing holes such as through holes. FIG. 20 is a cross-sectional view illustrating theelectronic device 10 according to this embodiment where through holes are employed as theholes 31. In theelectronic device 10 shown in FIG. 20, the through holes acting as theholes 31 electrically connect the patternedconductors 12 disposed on thesurface 11 a of themount substrate 11 andconductors 39 disposed on the other surface of themount substrate 11. When the through holes are used as theholes 31, it is not necessary to provide any special holes for the sucking in themount substrate 11. - The remainder of the configuration, functions and effects of this embodiment are similar to those of the first embodiment.
- [Third Embodiment]
- Reference is now made to FIG. 21 to FIG. 25 to describe a method of manufacturing an electronic device according to a third embodiment of the invention. The configuration of the electronic device according to this embodiment is the same as that of the first or second embodiment.
- The method of manufacturing the
electronic device 10 according to this embodiment includes the step of predetermining the relationship between processing conditions employed in the step of adhering theresin film 15 to the mount substrate 11 (hereinafter referred to as the adhering step) and a change in characteristics of theelectronic component 13 between before and after the adhering step. In this embodiment, in the adhering step the processing conditions are controlled based on the aforementioned relationship so as to attain desired characteristics of theelectronic component 13. The processing conditions may include at least one of a temperature of theresin film 15 as heated and a period of time over which theresin film 15 is heated. Theresin film 15 may contain a hardening accelerator, and the processing conditions may also include the content of the hardening accelerator. The other steps in the method of manufacturing theelectronic device 10 of this embodiment are the same as those of the first or second embodiment. - This embodiment is more detailed below with reference to an example in which the
electronic component 13 is a surface acoustic wave device and theelectronic device 10 is a band pass filter. In this case, the characteristics of the surface acoustic wave device acting as theelectronic component 13 are reflected upon those of the band pass filter acting as theelectronic device 10 such as the center frequency and the insertion loss in the pass band of the band pass filter. In this context, the following explanations employ the center frequency and the insertion loss in the pass band of the band pass filter to represent the characteristics of theelectronic component 13. - In this example, before actually making the
electronic device 10 as a product, predetermined is the relationship between the processing conditions for the adhering step and a change in the characteristic of theelectronic component 13 between before and after the adhering step. - FIG. 21 is a characteristic diagram illustrating an example of the results of measurements conducted to determine the relationship between the aforementioned processing conditions and change in the characteristics. FIG. 21 shows a change in the transmission characteristics of the band pass filter between before and after the adhering step. In FIG. 21, the horizontal axis represents frequency and the vertical axis represents S21 parameter corresponding to the attenuation amount of the filter. In FIG. 21, the solid line indicates the transmission characteristics obtained before the
electronic component 13 is sealed, that is, before the adhering step. On the other hand, the dotted line indicates the transmission characteristics obtained after theelectronic component 13 has been sealed, that is, after the adhering step. In this example, theresin film 15 is formed of an epoxy-based resin, and the content of a hardening accelerator in the epoxy-based resin is 0.1 wt %. In this example, in the adhering step theresin film 15 is heated at 180° C. for one hour. From FIG. 21, it can be seen that the center frequency in the pass band of the band pass filter changes between before and after the adhering step. - FIG. 22 is a characteristic diagram illustrating another example of the results of measurements conducted to determine the relationship between the processing conditions for the adhering step and change in the characteristics of the
electronic component 13 between before and after the adhering step. FIG. 22 shows changes in the transmission characteristics of the band pass filter between before and after the adhering step. In FIG. 22, the horizontal axis represents frequency and the vertical axis represents S21 parameter. FIG. 22 shows in detail the transmission characteristics in the frequency range where the S21 parameter has values from 0.0 to −5.0 dB. In this example, the adhering step was carried under four different conditions, that is, by varying the number of times of the heat treatment, to measure the transmission characteristics of the band pass filter after the adhering step each time. At each heat treatment, theresin film 15 was heated at 180° C. for one hour. In this example, theresin film 15 is formed of an epoxy-based resin, and the content of a hardening accelerator in the epoxy-based resin is 0.1 wt %. In FIG. 22, the solid line indicates the transmission characteristics obtained before theelectronic component 13 is sealed, that is, before the adhering step. On the other hand, the alternate long and short dashed lines indicate the transmission characteristics obtained after the adhering step in which the heat treatment was performed once. The chain double-dashed line indicates the transmission characteristics obtained after the adhering step in which the heat treatment was performed twice. The dashed line indicates the transmission characteristics obtained after the adhering step in which the heat treatment was performed three times. The dotted line indicates the transmission characteristics after the adhering step in which the heat treatment was performed four times. In the example shown in FIG. 22, the larger the number of times of the heat treatment in the adhering step, the greater the amount of change in the center frequency in the pass band of the band pass filter between before and after the adhering step. - In this example, from the results shown in FIG. 22, determined was the relationship among the number of times of the heat treatment in the adhering step, the amount of change in the center frequency f0 in the pass band of the band pass filter between before and after the adhering step, and the amount of change in the S21 parameter of the band pass filter between before and after the adhering step. FIG. 23 is a characteristic diagram illustrating the relationship. In FIG. 23, the horizontal axis represents the amount of change in the center frequency f0 and the vertical axis represents the amount of change in the S21 parameter. Furthermore, in FIG. 23, the point indicated by symbol HO corresponds to the origin of FIG. 23, that is, to the center frequency f0 and the S21 parameter provided before the
electronic component 13 is sealed. The point indicated by symbol H1 represents the amounts of changes in the center frequency f0 and in the S21 parameter between before and after the adhering step in which the heat treatment was performed once. The point indicated by symbol H2 represents the amounts of changes in the center frequency f0 and in the S21 parameter between before and after the adhering step in which the heat treatment was performed twice. The point indicated by symbol H3 represents the amounts of changes in the center frequency f0 and in the S21 parameter between before and after the adhering step in which the heat treatment was performed three times. The point indicated by symbol H4 represents the amounts of changes in the center frequency f0 and in the S21 parameter between before and after the adhering step in which the heat treatment was performed four times. In this example, the pass band is defined as the frequency band between the two frequencies at which the S21 parameter takes on a value lower than that at the minimum insertion loss by 3 dB, and the center frequency is defined to be the center frequency of this pass band. - From FIG. 23, it can be seen that both the amount of change in the center frequency f0 and the amount of change in the S21 parameter between before and after the adhering step increase with an increase in the number of times of the heat treatment performed in the adhering step, that is, with an increase in the time period of the heating. In the example shown in FIG. 23, the center frequency f0 shifts by about 2 MHz with one additional number of times of the heat treatment in the adhering step.
- FIG. 23 shows the relationship among the number of times of the heat treatment of the
resin film 15 serving as the processing condition employed in the adhering step, and the amounts of changes in the center frequency f0 and in the S21 parameter indicating changes in the characteristics of theelectronic component 13 between before and after the adhering step. - FIG. 24 is a characteristic diagram illustrating still another example of the results of measurements conducted to determine the relationship between the processing conditions employed in the adhering step and change in the characteristics of the
electronic component 13 between before and after the adhering step. In the measurements, determined was the relationship between the content of the hardening accelerator in theresin film 15 formed of an epoxy-based resin and the amount of change in the center frequency f0 between before and after the adhering step. Here, in the adhering step theresin film 15 was heated at 150° C. for one hour. In FIG. 24, the horizontal axis represents the content of the hardening accelerator and the vertical axis represents the amount of change in the center frequency f0. In FIG. 24, the black dots represent actual values of the measurements. The solid line represents the relationship between the content of the hardening accelerator and the amount of change in the center frequency f0, determined by the least square method based on the measurements. From FIG. 24, it can be seen that the amount of change in the center frequency f0 varies depending on the content of the hardening accelerator. Thus, FIG. 24 shows the relationship between the content of the hardening accelerator serving as the processing condition in the adhering step and the amount of change in the center frequency f0 indicating a change in the characteristics of theelectronic component 13 between before and after the adhering step. - FIG. 25 is a characteristic diagram illustrating still another example of the results of measurements conducted to determine the relationship between the processing conditions employed in the adhering step and change in the characteristics of the
electronic component 13 between before and after the adhering step. The measurements were conducted to determine the relationships between the content of the hardening accelerator in theresin film 15 formed of an epoxy-based resin and the amount of change in the center frequency f0 between before and after the adhering step in the cases where theresin film 15 was heated at 150° C. and at 180° C. in the adhering step. The other conditions for the measurements were the same as those for the measurements shown in FIG. 24. The curves in FIG. 25 represent the relationships between the content of the hardening accelerator and the amount of change in the center frequency f0, determined by the least square method based on the measurements. From FIG. 25, it can be seen that the amount of change in the center frequency f0 varies depending on the content of the hardening accelerator and the temperature at which theresin film 15 is heated in the adhering step. Thus, FIG. 25 shows the relationship among the content of the hardening accelerator and the temperature at which theresin film 15 is heated, which serve as the processing conditions in the adhering step, and the amount of change in the center frequency f0 indicating a change in the characteristics of theelectronic component 13 between before and after the adhering step. - In this embodiment, the
electronic device 10 is manufactured through controlling the processing conditions in the adhering step based on the relationships determined as described above, so as to attain desired characteristics of theelectronic component 13. More specifically, in this embodiment, the following two methods are available for attaining desired characteristics of theelectronic component 13 in manufacturing theelectronic device 10. - A first method is to compensate the characteristics of the
electronic component 13 through controlling the processing conditions in the adhering step in manufacturing theelectronic device 10. For example, this method is accomplished as follows. First, before theelectronic component 13 is mounted on themount substrate 11, the center frequency in the pass band of the band pass filter, serving as an indicator of the characteristics of theelectronic component 13, is measured. If the measured center frequency is shifted from a desired frequency and the shift falls within a range that can be compensated by controlling the processing conditions in the adhering step, the shift in the center frequency is compensated by controlling the processing conditions in the adhering step. This makes it possible to bring the center frequency in the pass band of the band pass filter closer to the desired frequency. - According to a second method, in manufacturing the
electronic device 10, theelectronic component 13 is fabricated in expectation of a change in the characteristics of theelectronic component 13 between before and after the adhering step, so as to attain desired characteristics of theelectronic component 13 after the adhering step. For example, this method is accomplished as follows. First, the processing conditions to be employed in the adhering step are determined such that the amount of change in the center frequency f0 between before and after the adhering step will fall within a predetermined amount. Then, in expectation of the change in the center frequency between before and after the adhering step, theelectronic component 13 is fabricated so as to obtain a desired center frequency after the adhering step. This means that theelectronic component 13 is fabricated such that the center frequency shifts from the desired frequency by the predetermined amount. The adhering step is then carried out under the predetermined conditions, thereby attaining a center frequency closer to the desired frequency. - In either of the first and second methods, if the amount of change in the S21 parameter increases with an increase in the amount of change in the center frequency as shown in FIG. 23, thereby increasing the insertion loss, it is preferable to control the processing conditions such that the amount of change in the S21 parameter will fall within a range less than or equal to a predetermined amount (e.g., 0.05 dB).
- As described above, according to this embodiment it is possible to attain desired characteristics of the
electronic component 13 while adhering theresin film 15 to themount substrate 11 by heating theresin film 15. - The remainder of the configuration, functions and effects of this embodiment are similar to those of the first or second embodiment.
- The invention is not limited to the aforementioned embodiments but may be modified in a variety of ways. For example, in the invention, one electronic device may include a plurality of electronic components.
- As described above, in the method of manufacturing the electronic device of the invention, the resin film is placed over the electronic component and the mount substrate, and, the gas existing on the electronic-component side of the mount substrate is sucked from the other side of the mount substrate through the hole provided in the mount substrate. The resin film is thereby deformed to cover the electronic component and the mount substrate in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component. Furthermore, the resin film is heated to be fluidized, and thereafter to be hardened. The resin film is then adhered to the mount substrate. The resin film reinforces the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate. The invention thus makes it possible to improve the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate, through simple steps and without adversely affecting the operation of the electronic component.
- In the method of manufacturing the electronic device of the invention, the resin film is deformed by sucking the gas existing on the electronic-component side of the mount substrate from the other side of the mount substrate through the hole formed in the mount substrate. Therefore, according to the invention it is easy to define the shape of the resin film.
- In the method of manufacturing the electronic device of the invention, the resin film is brought into close contact with the electronic component and the mount substrate by sucking the gas as described above, and the resin film is then heated to cause the resin film to fluidize, and thereafter to harden. The resin film is then adhered to the mount substrate. Therefore, according to the invention the resin film comes into highly close contact with the electronic component and the mount substrate, and as a result, the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate are improved with higher reliability.
- In the method of manufacturing the electronic device of the invention, the electronic component may be sealed with the resin film. This makes it possible to seal the electronic component through simple steps, without adversely affecting the operation of the electronic component.
- In the method of manufacturing the electronic device of the invention, a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate. In this case, it is possible to prevent the one of the surfaces of the electronic component from contacting other components or foreign materials, which can consequently eliminate possible adverse effects on the operation of the electronic device.
- In the method of manufacturing the electronic device of the invention, the resin film may be deformed with the resin film softened in the step of deforming the resin film. In this case, the shape of the resin film is defined more easily.
- In the method of manufacturing the electronic device of the invention, the hole formed in the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed, and the hole may be closed after the step of adhering the resin film. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- In the method of manufacturing the electronic device of the invention, the hole formed in the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film in the step of adhering the resin film. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- In the method of manufacturing the electronic device of the invention, the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate. In this case, it is not necessary to provide the mount substrate with any special hole for sucking.
- The method of manufacturing the electronic device of the invention may further comprise the step of predetermining a relationship between a processing condition employed in the step of adhering the resin film and a change in characteristics of the electronic component between before and after the step of adhering the resin film, and, in the step of adhering the resin film, the processing condition may be controlled based on the relationship mentioned above, so as to obtain desired characteristics of the electronic component. In this case, it is possible to attain desired characteristics of the electronic component while adhering the resin film to the mount substrate by heating the resin film.
- In the electronic device of the invention, the resin film is adhered to the mount substrate, covering the electronic component and the mount substrate in close contact with the surface of the electronic component farther from the mount substrate and with the part of the one of the surfaces of the mount substrate located around the electronic component. The resin film acts to reinforce the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate. Accordingly, the invention makes it possible to improve the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate, with a simple configuration and without adversely affecting the operation of the electronic component.
- The electronic device of the invention makes it possible, in the manufacturing process thereof, to deform the resin film by sucking a gas existing on the electronic-component side of the mount substrate from the other side of the mount substrate through the hole formed in the mount substrate. Therefore, according to the invention it is easy to define the shape of the resin film.
- In the electronic device of the invention, the resin film is brought into close contact with the electronic component and the mount substrate through the suction of the gas as described above, and is adhered to the mount substrate after being fluidized and thereafter hardened by heating. Therefore, according to the invention the resin film comes into highly close contact with the electronic component and the mount substrate, and as a result, the strength and stability of the mechanical bonding between the connection electrode of the electronic component and the patterned conductor of the mount substrate are improved with higher reliability.
- In the electronic device of the invention, the electronic component may be sealed with the resin film. In this case, sealing of the electronic component is effected with a simple configuration and without adversely affecting the operation of the electronic component.
- In the electronic device of the invention, a cavity may be formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate. In this case, it is possible to prevent the one of the surfaces of the electronic component from contacting other components or foreign materials, which can consequently eliminate possible adverse effects on the operation of the electronic device.
- In the electronic device of the invention, the hole formed in the mount substrate may be disposed at a center portion of a region of the mount substrate where the electronic component is placed, and the hole may be closed with a plug member. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- In the electronic device of the invention, the hole formed in the mount substrate may be disposed around a region of the mount substrate where the electronic component is placed, and the hole may be closed with the resin film. In this case, when the electronic component is sealed with the resin film, it is possible to maintain the sealed state of the electronic component with reliability.
- In the electronic device of the invention, the hole formed in the mount substrate may be a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate. In this case, it is not necessary to provide the mount substrate with any special hole for sucking.
- Obviously many modifications and variations of the present invention are possible in the light of the above teachings. It is therefore to be understood that within the range of equivalency of the appended claims the present invention may be carried out otherwise than as specifically described.
Claims (18)
1. A method of manufacturing an electronic device comprising: a mount substrate having a patterned conductor exposed on one of surfaces of the mount substrate; and an electronic component having a connection electrode formed on one of surfaces of the electronic component, the one of the surfaces of the electronic component that has the connection electrode formed thereon being disposed to face toward the one of the surfaces of the mount substrate, the connection electrode being electrically connected and mechanically bonded to the patterned conductor of the mount substrate, the method comprising the steps of:
disposing the electronic component and the mount substrate such that the one of the surfaces of the electronic component faces toward the one of the surfaces of the mount substrate, and electrically connecting and mechanically bonding the connection electrode of the electronic component to the patterned conductor of the mount substrate;
placing a resin film over the electronic component and the mount substrate;
deforming the resin film by sucking a gas existing on an electronic-component side of the mount substrate from the other side of the mount substrate through a hole provided in the mount substrate, such that the resin film covers the electronic component and the mount substrate in close contact with a surface of the electronic component that is farther from the mount substrate and with a part of the one of the surfaces of the mount substrate, the part being located around the electronic component; and
adhering the resin film to the mount substrate by heating the resin film to cause the resin film to fluidize and thereafter to harden.
2. A method of manufacturing an electronic device according to claim 1 , wherein the resin film seals the electronic component.
3. A method of manufacturing an electronic device according to claim 1 , wherein a cavity is formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate.
4. A method of manufacturing an electronic device according to claim 1 , wherein the resin film is deformed with the resin film softened in the step of deforming the resin film.
5. A method of manufacturing an electronic device according to claim 1 , wherein the hole formed in the mount substrate is disposed at a center portion of a region of the mount substrate where the electronic component is placed.
6. A method of manufacturing an electronic device according to claim 5 , further comprising the step of closing the hole after the step of adhering the resin film.
7. A method of manufacturing an electronic device according to claim 1 , wherein the hole formed in the mount substrate is disposed around a region of the mount substrate where the electronic component is placed, and the hole is closed with the resin film in the step of adhering the resin film.
8. A method of manufacturing an electronic device according to claim 1 , wherein the hole formed in the mount substrate is a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate.
9. A method of manufacturing an electronic device according to claim 1 , further comprising the step of predetermining a relationship between a processing condition employed in the step of adhering the resin film and a change in characteristics of the electronic component between before and after the step of adhering the resin film, wherein
in the step of adhering the resin film, the processing condition is controlled based on said relationship so as to obtain desired characteristics of the electronic component.
10. A method of manufacturing an electronic device according to claim 9 , wherein the processing condition includes at least one of a temperature of the resin film as heated and a period of time over which the resin film is heated.
11. A method of manufacturing an electronic device according to claim 9 , wherein the resin film contains a hardening accelerator, and the processing condition includes a content of the hardening accelerator contained in the resin film.
12. An electronic device comprising:
a mount substrate having a patterned conductor exposed on one of surfaces of the mount substrate; and an electronic component having a connection electrode formed on one of surfaces of the electronic component, the one of the surfaces of the electronic component that has the connection electrode formed thereon being disposed to face toward the one of the surfaces of the mount substrate, the connection electrode being electrically connected and mechanically bonded to the patterned conductor of the mount substrate; and
a resin film that covers the electronic component and the mount substrate in close contact with a surface of the electronic component that is farther from the mount substrate and with a part of the one of the surfaces of the mount substrate, the part being located around the electronic component, the resin film being adhered to the mount substrate after having been fluidized and thereafter hardened by heating,
wherein the mount substrate has a hole used to suck therethrough a gas existing on an electronic-component side of the mount substrate from the other side of the mount substrate to thereby define a shape of the resin film.
13. An electronic device according to claim 12 , wherein the resin film seals the electronic component.
14. An electronic device according to claim 12 , wherein a cavity is formed between the one of the surfaces of the electronic component and the one of the surfaces of the mount substrate.
15. An electronic device according to claim 12 , wherein the hole of the mount substrate is disposed at a center portion of a region of the mount substrate where the electronic component is placed.
16. An electronic device according to claim 15 , further comprising a plug member for closing the hole of the mount substrate.
17. An electronic device according to claim 12 , wherein the hole of the mount substrate is disposed around a region of the mount substrate where the electronic component is placed, and the hole is closed with the resin film.
18. An electronic device according to claim 12 , wherein the hole formed in the mount substrate is a through hole for electrically connecting the patterned conductor disposed on the one of the surfaces of the mount substrate and another conductor provided in the mount substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/812,017 US7134196B2 (en) | 2000-12-18 | 2004-03-30 | Electronic device and manufacturing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000384382 | 2000-12-18 | ||
JP2000-384382 | 2000-12-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/812,017 Division US7134196B2 (en) | 2000-12-18 | 2004-03-30 | Electronic device and manufacturing same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20020097562A1 true US20020097562A1 (en) | 2002-07-25 |
Family
ID=18851854
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/011,291 Abandoned US20020097562A1 (en) | 2000-12-18 | 2001-12-11 | Electronic device and manufacturing same |
US10/487,158 Abandoned US20040235219A1 (en) | 2000-12-18 | 2001-12-12 | Plating apparatus, plating method, and method for manufacturing semiconductor device |
US10/812,017 Expired - Fee Related US7134196B2 (en) | 2000-12-18 | 2004-03-30 | Electronic device and manufacturing same |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/487,158 Abandoned US20040235219A1 (en) | 2000-12-18 | 2001-12-12 | Plating apparatus, plating method, and method for manufacturing semiconductor device |
US10/812,017 Expired - Fee Related US7134196B2 (en) | 2000-12-18 | 2004-03-30 | Electronic device and manufacturing same |
Country Status (5)
Country | Link |
---|---|
US (3) | US20020097562A1 (en) |
EP (1) | EP1345263A4 (en) |
KR (1) | KR100781789B1 (en) |
CN (1) | CN1193416C (en) |
WO (1) | WO2002050887A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190082541A1 (en) * | 2017-09-14 | 2019-03-14 | HELLA GmbH & Co. KGaA | System for potting components using a cap |
TWI836432B (en) * | 2021-05-18 | 2024-03-21 | 日商Tdk股份有限公司 | Substrate processing equipment |
TWI836431B (en) * | 2021-05-18 | 2024-03-21 | 日商Tdk股份有限公司 | Substrate processing device and substrate processing method |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004221232A (en) * | 2003-01-14 | 2004-08-05 | Nitto Denko Corp | Semiconductor device and its manufacturing method |
CN1294699C (en) * | 2003-08-21 | 2007-01-10 | 倪永贵 | Ceramic substrate with crystal resonator on its surface and manufacture thereof |
CN100411123C (en) * | 2005-11-25 | 2008-08-13 | 全懋精密科技股份有限公司 | Semiconductor buried base plate structure and its manufacturing method |
GB2453560A (en) * | 2007-10-10 | 2009-04-15 | Renewable Energy Corp Asa | Wafer electroplating apparatus |
CN102338898A (en) * | 2010-07-28 | 2012-02-01 | 盛玉林 | Reflector plate and processing process thereof |
CN105873373B (en) * | 2015-01-21 | 2019-01-25 | 华为技术有限公司 | A kind of circuit board processing method and circuit board |
JP6327232B2 (en) * | 2015-10-30 | 2018-05-23 | 日亜化学工業株式会社 | LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE MANUFACTURING METHOD |
JP6433414B2 (en) * | 2015-11-18 | 2018-12-05 | 株式会社中央製作所 | Elevator type plating equipment |
US20180130719A1 (en) * | 2016-11-09 | 2018-05-10 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages and method of manufacturing the same |
EP3836010B1 (en) | 2019-12-12 | 2024-07-24 | Fingerprint Cards Anacatum IP AB | A biometric sensor module for card integration |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5612576A (en) * | 1992-10-13 | 1997-03-18 | Motorola | Self-opening vent hole in an overmolded semiconductor device |
US6057597A (en) * | 1997-12-15 | 2000-05-02 | Micron Technology, Inc. | Semiconductor package with pre-fabricated cover |
US6262513B1 (en) * | 1995-06-30 | 2001-07-17 | Kabushiki Kaisha Toshiba | Electronic component and method of production thereof |
US6492194B1 (en) * | 1999-10-15 | 2002-12-10 | Thomson-Csf | Method for the packaging of electronic components |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH069192U (en) * | 1992-07-03 | 1994-02-04 | 富士通株式会社 | Printed circuit board mounting structure |
JPH08160401A (en) * | 1994-12-02 | 1996-06-21 | Sony Corp | Plasma address display element and its production |
JPH0964076A (en) * | 1995-08-25 | 1997-03-07 | Matsushita Electric Ind Co Ltd | Sealing board of ic chip and sealing device |
JPH09162525A (en) * | 1995-12-06 | 1997-06-20 | Oki Electric Ind Co Ltd | Process for applying sealing resin to bare chip in flip chip mounting |
DE59704079D1 (en) | 1996-05-24 | 2001-08-23 | Epcos Ag | ELECTRONIC COMPONENT, IN PARTICULAR WORKING COMPONENT WITH ACOUSTIC SURFACE WAVES - SAW COMPONENT |
JP3659439B2 (en) | 1996-07-30 | 2005-06-15 | 京セラ株式会社 | Surface mount electronic components |
JPH10125825A (en) | 1996-10-23 | 1998-05-15 | Nec Corp | Seal structure of chip device and method of sealing the same |
JPH11330148A (en) * | 1998-03-13 | 1999-11-30 | Toshiba Corp | Semiconductor device |
JPH11354705A (en) * | 1998-06-04 | 1999-12-24 | Toshiba Corp | Semiconductor device and its manufacture |
JP2001189639A (en) | 1998-12-29 | 2001-07-10 | Toshiba Corp | Surface acoustic wave device |
JP2001053092A (en) * | 1999-08-13 | 2001-02-23 | Japan Radio Co Ltd | Package, device and its manufacture |
-
2001
- 2001-12-11 US US10/011,291 patent/US20020097562A1/en not_active Abandoned
- 2001-12-12 US US10/487,158 patent/US20040235219A1/en not_active Abandoned
- 2001-12-14 CN CNB018051723A patent/CN1193416C/en not_active Expired - Fee Related
- 2001-12-14 KR KR1020027010425A patent/KR100781789B1/en not_active IP Right Cessation
- 2001-12-14 WO PCT/JP2001/010973 patent/WO2002050887A1/en active Application Filing
- 2001-12-14 EP EP01271655A patent/EP1345263A4/en not_active Withdrawn
-
2004
- 2004-03-30 US US10/812,017 patent/US7134196B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5612576A (en) * | 1992-10-13 | 1997-03-18 | Motorola | Self-opening vent hole in an overmolded semiconductor device |
US6262513B1 (en) * | 1995-06-30 | 2001-07-17 | Kabushiki Kaisha Toshiba | Electronic component and method of production thereof |
US6057597A (en) * | 1997-12-15 | 2000-05-02 | Micron Technology, Inc. | Semiconductor package with pre-fabricated cover |
US6492194B1 (en) * | 1999-10-15 | 2002-12-10 | Thomson-Csf | Method for the packaging of electronic components |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190082541A1 (en) * | 2017-09-14 | 2019-03-14 | HELLA GmbH & Co. KGaA | System for potting components using a cap |
US10834827B2 (en) * | 2017-09-14 | 2020-11-10 | HELLA GmbH & Co. KGaA | System for potting components using a cap |
TWI836432B (en) * | 2021-05-18 | 2024-03-21 | 日商Tdk股份有限公司 | Substrate processing equipment |
TWI836431B (en) * | 2021-05-18 | 2024-03-21 | 日商Tdk股份有限公司 | Substrate processing device and substrate processing method |
Also Published As
Publication number | Publication date |
---|---|
EP1345263A1 (en) | 2003-09-17 |
EP1345263A4 (en) | 2004-12-15 |
US7134196B2 (en) | 2006-11-14 |
KR100781789B1 (en) | 2007-12-04 |
CN1193416C (en) | 2005-03-16 |
WO2002050887A1 (en) | 2002-06-27 |
US20040235219A1 (en) | 2004-11-25 |
CN1401137A (en) | 2003-03-05 |
US20040177498A1 (en) | 2004-09-16 |
KR20020073548A (en) | 2002-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7134196B2 (en) | Electronic device and manufacturing same | |
JP3825475B2 (en) | Manufacturing method of electronic parts | |
JP5686943B2 (en) | Elastic wave device and manufacturing method thereof | |
US7969072B2 (en) | Electronic device and manufacturing method thereof | |
US20050023663A1 (en) | Method of forming a package | |
EP1757556A2 (en) | Packaging a semiconductor device | |
US20050062167A1 (en) | Package assembly for electronic device and method of making same | |
US20020008438A1 (en) | System and method for array processing of surface acoustic wave devices | |
JP2002334954A (en) | Electronic device and method of manufacturing the same and cap for electronic component protection, and method of manufacturing the same | |
KR100909198B1 (en) | Electronic device and manufacturing method thereof | |
KR20180055369A (en) | SAW device package and manufacturing method thereof | |
JP3619186B2 (en) | Electronic device and manufacturing method thereof | |
JP2002217221A (en) | Manufacturing method for electronic device | |
JP2002184884A (en) | Electronic device and manufacturing method thereof | |
JP2002217523A (en) | Method of manufacturing electronic device | |
JP2002217219A (en) | Method for manufacturing electronic device | |
JP3572254B2 (en) | Circuit board | |
JP2002324815A (en) | Method for manufacturing electronic device | |
JP2002313828A (en) | Electronic device and its manufacturing method | |
KR100431182B1 (en) | Surface acoustic wave device package and method | |
US9166553B2 (en) | Surface acoustic wave (SAW) device package and method for fabricating same | |
JP2002217218A (en) | Method for manufacturing electronic device | |
JP2002217220A (en) | Method for manufacturing electronic device | |
JP2002314234A (en) | Electronic device and its manufacturing method | |
KR101971664B1 (en) | Semiconductor package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TDK CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MORIYA, BUNJI;TAJIMA, SEIICHI;KUROSAWA, FUMIKACHI;AND OTHERS;REEL/FRAME:012368/0311 Effective date: 20011205 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |