US20020055324A1 - Process for polishing silicon wafers - Google Patents

Process for polishing silicon wafers Download PDF

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Publication number
US20020055324A1
US20020055324A1 US09/952,054 US95205401A US2002055324A1 US 20020055324 A1 US20020055324 A1 US 20020055324A1 US 95205401 A US95205401 A US 95205401A US 2002055324 A1 US2002055324 A1 US 2002055324A1
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Prior art keywords
polishing
agent
stopping agent
stopping
polished
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US09/952,054
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English (en)
Inventor
Guido Wenski
Thomas Altmann
Gerhard Heier
Wolfgang Winkler
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Siltronic AG
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Wacker Siltronic AG
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Assigned to WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG reassignment WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ALTMANN, THOMAS, HEIER, GERHARD, WENSKI, GUIDO, WINKLER, WOLFGANG
Publication of US20020055324A1 publication Critical patent/US20020055324A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a polishing process for semiconductor wafers made from silicon, which are used in particular in industry for the fabrication of microelectronic components.
  • the polishing is generally carried out as a chemical-mechanical process.
  • the silicon surface which is to be polished while an alkaline polishing agent which contains abrasives is being supplied, is moved in rotation over a polishing plate covered with polishing cloth.
  • the alkalinity of the polishing agent leads to chemical dissolution of the amphoteric silicon, while the abrasives, for example silicon dioxide particles (SiO 2 ), have an additional mechanical action.
  • double-side polishing unlike single-side polishing, provides silicon wafers with a polished front surface and a polished back surface. For cost reasons, double-side polishing is not carried out in a plurality of stages, but rather is generally followed by a brief single-side polishing of the front surface, in order to produce a surface of low roughness.
  • Both types of polishing process result in a highly reactive, hydrophobic, i.e. water-repelling, silicon surface.
  • the thin native oxide film which is normally present on the silicon surface has been removed.
  • the silicon surface is exposed to continued attack from alkaline polishing agent and atmospheric oxygen, being present at the end of the silicon-removing polishing. Therefore, methods which protect the reactive wafer surface immediately after the polishing have been developed.
  • an improvement is brought about if the supply of alkaline polishing agent, toward the end of the polishing, is replaced by a supply of ultrapure water, while rotation continues.
  • incomplete rinsing away of alkaline polishing agent residues may lead to spots being formed on the wafer surface.
  • EP 684 634 A2 has described a single-side polishing process for semiconductor wafers which is distinguished by two different polishing agents of different grain size being successively supplied on one polishing machine.
  • two different polishing agents based on SiO 2 (“silica sol”), first of all a mixture of polishing agent 1 with alkali additives (pH greater than 11), and then polishing agent 2 with alkali additives (pH greater than 11), and then an acidic aqueous stopping agent based on polyalcohol, hydrogen peroxide (H 2 O 2 ) and acid (pH less than 4) are supplied.
  • hydrogen peroxide H 2 O 2
  • acid pH less than 4
  • the above object is relieved by the present invention which provides a process for the chemical-mechanical polishing of silicon wafers by rotational movement of a silicon surface which is to be polished on a polishing plate which is covered with polishing cloth, with a continuous supply of an alkaline polishing agent which contains abrasives, at least 2 ⁇ m of material being removed from the polished silicon surface during the polishing, and immediately after the polishing has finished, and while maintaining the rotational movement, instead of supplying the polishing agent, supplying at least two different stopping agents in succession, each removing less than 0.5 ⁇ m of material from the polished silicon surface.
  • the material-removing polishing step is successively followed by two different stopping steps whose properties are adapted to one another.
  • the first stopping step has the object of smoothing the wafer surface; the second stopping step is responsible for cleaning and preserving.
  • a clear distinction is drawn between a polishing step, in which at least 0.5 ⁇ m of material, for example 2 to 25 ⁇ m, is removed from each polished side of the silicon wafer, and a stopping step.
  • a stopping step less than 0.5 ⁇ m of material, for example 0 to 0.3 ⁇ m, is removed from each polished side of the silicon wafer.
  • the starting product for the process is silicon wafers with rounded edges which are produced by sawing a silicon single crystal and have been subjected to one or more of the process steps of lapping, grinding, etching and polishing.
  • the end product of the process is silicon wafers with a polished front surface and an unpolished back surface or a polished front surface and a polished back surface, at least one polished side having a low roughness and a low defect rate.
  • the process according to the invention can in principle be used to produce wafer-like bodies which consist of a material which can be treated using a chemical-mechanical polishing process.
  • the use of single-crystal silicon wafers is particularly preferred and forms the subject of the following description.
  • the silicon wafers which are produced by sawing a silicon single crystal and rounding the edges may be subjected to one or more abrasive process steps before the polishing process according to the invention is carried out.
  • the inventive process has the object of improving the wafer geometry and of removing flawed surface layers and contaminations. Suitable processes are, for example, lapping, grinding and etching. Wafers with polished surfaces can also be subjected to the process according to the invention. This is done for example in order to rework wafers which have already been polished but do not comply with specifications, so as to transform them into a state in which they do comply with the relevant specifications.
  • the process according to the invention can be used for any polishing technique which operates in accordance with the chemical-mechanical polishing principle.
  • this means to achieve the planned removal of material by working with a polishing agent which is generally supplied continuously.
  • the polishing agent also contains an alkaline component, which allows the silicon surface, which is no longer covered by a native oxide layer, to be attacked chemically.
  • Both single-side polishing and double-side polishing are suitable for execution of the process according to the invention.
  • it has proven expedient for at least 12 silicon wafers to be polished simultaneously, and this is therefore preferred.
  • double-side polishing is particularly preferred for the production of wafers to supply modern component lines within the scope of the invention. The statements made below in connection with the polishing process according to the invention are therefore directed only to the double-side polishing process.
  • a double-side polishing machine which is suitable for carrying out the process substantially comprises a lower polishing plate, which can rotate freely in the horizontal plane, and an upper polishing plate, which can rotate freely in the horizontal plane. Both of these plates are covered, preferably by adhesive bonding, with in each case one polishing cloth.
  • This machine with a continuous supply of the alkaline polishing agent, allows abrasive polishing of silicon wafers on both sides.
  • the silicon wafers are in this case held, during polishing, on a geometric path which is determined by machine and process parameters, preferably on a cycloidal path, by carriers which have suitably dimensioned cutouts for receiving the silicon wafers.
  • the carriers are in contact with the polishing machine, for example by means of a pin gearing or an involute toothing, via a rotating inner pin ring or toothed ring and an outer pin ring or toothed ring. It generally rotates in the opposite direction, and as a result are set in rotary motion between the two polishing plates. It is particularly preferable to simultaneously use from four to six planar carriers made from stainless chromium steel which are covered with in each case at least three silicon wafers. The edges of these wafers are protected by polymer linings in the cutouts.
  • the preferred diameter of the silicon wafers to be polished is between 150 and 300 mm. In present-day specifications from the component manufacturers, this relates to the diameters 150 mm, 200 mm and 300 mm. However, intermediate sizes and slightly larger or smaller diameters are also possible. If the diameters were considerably smaller, the quantity to be polished at the same time would generally be excessively high to allow speedy loading and unloading. For larger diameters, for example 400 mm or 450 mm, it is possible in principle to use the process according to the invention. But the preferred configuration with at least twelve wafers to be polished at the same time leads to polishing machine dimensions which have not yet been feasible to produce.
  • Polishing is particularly preferably carried out using a commercially available polyurethane polishing cloth with a hardness of from 60 to 90 (Shore A), which may contain incorporated polyester fibers.
  • the polishing process takes place with a continuous supply of a polishing agent which contains abrasives and the pH of which has been set to the desired level by the addition of alkali.
  • Suitable polishing agents are aqueous suspensions or colloids of a large number of abrasive inorganic substances, for example silicon dioxide, silicon nitride, silicon carbide, aluminum oxide, titanium dioxide, titanium nitride, zirconium dioxide or cerium dioxide, to which an alkaline substance is added.
  • alkaline substances which are added can possibly be sodium carbonate (Na 2 CO 3 ), potassium carbonate (K 2 CO 3 ), further alkaline carbonate compounds, sodium hydroxide (NaOH), potassium hydroxide (KOH), ammonium hydroxide (NH 4 OH), tetramethylammonium hydroxide (TMAH) and/or further alkaline hydroxide compounds, in proportions of from 0.01 to 10% by weight, and also, if appropriate, other additives in small proportions.
  • the percent by weight of the alkaline substance is based upon the total weight of the aqueous polishing agent.
  • an aqueous polishing agent which contains silicon dioxide (SiO 2 ) with a grain size of between 5 and 50 nm and a solids content of from 1 to 10% by weight and a pH of between 9 and 12 is preferred.
  • the weight percent of the solids content is based upon the total weight of the aqueous polishing agent.
  • the SiO 2 content is particularly preferably derived from precipitated silicic acid of chemical formula Si(OH) 4 , and the pH is between 10.5 and 12.
  • Polishing is preferably carried out under a polishing pressure of from 0.1 to 0.5 bar.
  • the silicon removal rate is preferably between 0.1 and 1.5 ⁇ m/min, and particularly preferably between 0.4 and 0.9 ⁇ m/min.
  • the amount of silicon removed is preferably between 2 and 25 ⁇ m per polished wafer surface.
  • the chemically wholly reactive, hydrophobic wafer surface has to be passivated.
  • this is achieved by, immediately after polishing has finished, and without opening the polishing machine, successively supplying at least two different stopping agents, the rotational conditions being maintained but with the pressure being reduced significantly to between 0.005 and 0.1 bar, preferably between 0.01 and 0.05 bar.
  • the stopping agents fulfill different functions: the first stopping agent is responsible for smoothing the silicon surface by removing streaks and lowering the surface roughness without removing significant quantities of material.
  • the second stopping agent is responsible for cleaning the wafer surface and preserving it, for example by producing an oxide or by application of a film of liquid.
  • the first stopping agent it is preferable for the first stopping agent to have a lower pH than the polishing agent and for the second stopping agent to have a lower pH than the first stopping agent.
  • the differences in pH in a particularly preferred embodiment, are no greater than 3 pH units.
  • a pH of between 9 and 10.5 is particularly preferable for the first stopping agent, and a pH of between 7.5 and 9 is particularly preferable for the second stopping agent, if the polishing agent has a pH of between 10.5 and 12.
  • the role of the first stopping agent is fulfilled particularly well by a weakly alkaline aqueous suspension which contains from 0.1 to 5% by weight of SiO 2 particles of a grain size of between 5 and 50 nm.
  • the percent by weight of SiO 2 particles is based upon the total weight of the first stopping agent suspension.
  • the SiO 2 particles were produced by pyrolysis of Si(OH) 4 (“pyrogenic silica”), to which a polyhydric alcohol has been added in a proportion of from 0.01 to 10% by volume. The percent by volume is based upon the total volume of the suspension of the first stopping agent.
  • the polyhydric alcohol prevents, by condensation reaction with the hydrophobic silicon surface, which has Si—H terminal groups, a significant chemical attack from residual polishing agent and the weakly alkaline stopping agent from occurring. Also the spherical form of the pyrogenic SiO 2 particles leads to smoothing of the silicon surface without significant quantities of material being removed.
  • the polyhydric alcohol is preferably selected from the list of compounds and compound classes consisting of glycerol (1,2,3-propanetriol), monomeric glycols, oligomeric glycols, polyglycols and polyalcohols.
  • suitable monomeric glycols are ethylene glycol (1,2-ethanediol), propylene glycols (1,2-propanediol and 1,3-propanediol) and butylene glycols (1,3-butanediol and 1,4-butanediol).
  • suitable oligomeric glycols are diethylene glycol, triethylene glycol, tetraethylene glycol and dipropylene glycol.
  • polyglycols are polyethylene glycol, polypropylene glycol and mixed polyethers.
  • polyalcohols are polyvinyl alcohols and polyether polyols. Said compounds are commercially available, often in different chain lengths in the case of polymers.
  • the first stopping agent may additionally contain small quantities of short-chain, monohydric alcohols, such as i-propanol and n-butanol, and of surfactants.
  • surfactant is understood as meaning a surface-active agent.
  • the role of the second stopping agent is fulfilled in particular by an aqueous solution which contains a film-forming agent or a plurality of film-forming agents.
  • concentration used is dependent on the nature of the film-forming agent and lying between 10-4 and 50% by volume. A concentration range between 0.01% and 10% by volume is generally preferred.
  • the percent by volume of the film forming agent is based upon the total volume of the second stopping agent aqueous solution.
  • suitable polyhydric alcohols are the alcohols described above in connection with the description of the first stopping agent. It is possible, although not imperative, for the first and second stopping agents to contain the same polyhydric alcohol.
  • An example of a surfactant is a preparation based on alkylbenzenesulfonic acid and amine ethoxylate, which is commercially available from ICB under the trademark SILAPUR®.
  • the second stopping agent may in addition contain short-chain, monohydric alcohols, such as i-propanol and n-butanol, in concentrations of from 0.01 to 2% by volume.
  • the first and second stopping agents are in each case supplied for a period of preferably 0.1 to 10 min, particularly preferably for 0.5 to 5 min.
  • the silicon wafers which are completely covered with the film after the second stopping agent has been supplied and the polishing machine has been opened, are removed from the polishing machine and are subjected to cleaning and drying in accordance with the prior art.
  • the cleaning may be carried out either as a batch process with simultaneous cleaning of a multiplicity of wafers in baths or by spraying processes or as an individual-wafer process.
  • bath cleaning in which all the wafers from one polishing operation are cleaned simultaneously, for example using the sequence comprising aqueous hydrofluoric acid—ultrapure water—aqueous TMAH/H 2 O 2 solution—ultrapure water, megasound assistance in the TMAH/H 2 O 2 bath being advantageous in order to improve the removal of particles.
  • aqueous hydrofluoric acid ultrapure water
  • aqueous TMAH/H 2 O 2 solution ultrapure water
  • megasound assistance in the TMAH/H 2 O 2 bath being advantageous in order to improve the removal of particles.
  • spot-free drying there are commercially available units which operate, for example, according to the centrifugal drying, hot-water, Marangoni or HF/ozone principle, all of which are equally preferred.
  • the double-side-polished wafers obtained in this way are dry, hydrophilic and free of spots, scratches and further flaws which are visible under focused light. They are obtained in high yields and have very low surface roughnesses, as demonstrated, for example, by AFM (“atomic force microscope”) or Chapman measurements. Consequently, they have advantages over silicon wafers which have been polished in accordance with the prior art and can without problems be passed either to a reduced touch polishing stage followed by further processing or to an epitaxial coating or component fabrication stage immediately after the polishing step according to the invention.
  • quality inspection for light spot or haze defects after the application of the epitaxial coating using the process according to the invention leads to yields which are approximately 10% higher than when using processes of the prior art.
  • FIG. 1 shows the process sequence of a single-side polishing process with sequential supply of two polishing agents and one stopping agent in accordance with the prior art
  • FIG. 2 shows the process sequence of a double-side polishing process with sequential supply of one polishing agent and one stopping agent in accordance with the prior art, as described in the Comparative Example;
  • FIG. 3 shows a preferred process sequence according to the invention for a double-side polishing process with a polishing agent and two stopping agents being supplied sequentially, as described in the Example.
  • the carriers had circumferential teeth which fitted onto the inner and outer involute teeth of the polishing machine.
  • the upper and lower polishing plates of the polishing machine were covered with in each case one polishing cloth of type SUBA500 produced by Rodel, which was composed of a layer of polyurethane foam reinforced with polyester fibers facing the silicon wafers which are to be polished, a moisture barrier layer and a pressure-adhesive layer.
  • the double-side polishing step was carried out using an alkaline polishing agent which comprised an aqueous suspension of precipitated silica (Sio 2 particle size 10-20 nm; solids content 3% by weight; NaOH-stabilized) and, after the addition of alkali (2% by weight of K 2 CO 3 and 0.03% by weight of KOH), had a pH of 11.2.
  • the polishing took place under a pressure of 0.15 bar and with the upper and lower polishing plates at a temperature of in each case 40° C., leading to a removal rate of 0.65 ⁇ m/min.
  • the supply of the polishing agent was ended and was replaced, for a period of 3 min, by the supply of a stopping agent which comprised an aqueous solution of 1% by volume of glycerol, 1% by volume of n-butanol and 0.07% by volume of a commercially available surfactant known under the trademark SILAPUR® (produced by ICB).
  • SILAPUR® a commercially available surfactant known under the trademark SILAPUR® (produced by ICB).
  • the lower polishing plate, the upper polishing plate and the carriers continued to be moved and the pressure was reduced to 0.03 bar.
  • a sample of the stopping agent had a pH of 8.0.
  • the polished silicon wafers were removed from the polishing machine and were cleaned in a batch-cleaning installation using the bath sequence comprising aqueous hydrofluoric acid—ultrapure water—TMAH/H 2 O 2 /megasound—ultrapure water, and were dried in a commercially available hot-water dryer.
  • the silicon wafers produced in this way were substantially free of scratches, haze spots and localized light scatterers.
  • the procedure was as described in the Comparative Example, except that between the polishing step and the stopping step, with the rotary conditions maintained, a further stopping step followed by a brief feed of ultrapure water, both at a pressure of 0.03 bar, was added.
  • the corresponding stopping agent 1 comprised an aqueous suspension of pyrogenic silica (SiO 2 particle size 30-40 nm; solids content 1.5% by weight; NH 4 0H-stabilized), to which 0.3% by volume of triethylene glycol was admixed and which had a pH of 9.7.
  • stopping agent 1 SiO 2 /triethylene glycol in ultrapure water; 3 min
  • stopping agent 2 glycerol/butanol/surfactant in ultrapure water; 2 min.
  • the silicon wafers produced in this way were likewise substantially free of scratches, haze spots and localized light scatterers.
  • the surface roughness of the silicon wafers which had been polished in accordance with the Comparative Example and the Example was determined using an optical measuring instrument using the phase difference of a linearly polarized, split laser beam, with a part-beam being reflected from the wafer surface (“Chapman process”).
  • the following mean values for the roughness were obtained for the RMS (root mean square) values for these long-wave roughnesses.
  • the roughness of the front surfaces and of the back surfaces of the simultaneously polished wafers were identical within the margin of error.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Mechanical Treatment Of Semiconductor (AREA)
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US09/952,054 2000-09-21 2001-09-11 Process for polishing silicon wafers Abandoned US20020055324A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10046933A DE10046933C2 (de) 2000-09-21 2000-09-21 Verfahren zur Politur von Siliciumscheiben
DE10046933.7 2000-09-21

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US20060090402A1 (en) * 2004-10-29 2006-05-04 Yasuhide Uemura Polishing composition
US20100056410A1 (en) * 2006-09-25 2010-03-04 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20100055908A1 (en) * 2008-08-27 2010-03-04 Siltronic Ag Method for producing a semiconductor wafer
CN101818028A (zh) * 2009-10-20 2010-09-01 浙江超微细化工有限公司 一种固-固相合成三氧化二铝基抛光粉的工艺方法
US20100323586A1 (en) * 2009-06-17 2010-12-23 Georg Pietsch Methods for producing and processing semiconductor wafers
US20100327414A1 (en) * 2009-06-24 2010-12-30 Siltronic Ag Method For Producing A Semiconductor Wafer
US20110081836A1 (en) * 2009-10-07 2011-04-07 Siltronic Ag Method for grinding a semiconductor wafer
US20110237079A1 (en) * 2009-09-30 2011-09-29 Dupont Air Products Nanomaterials Llc Method for exposing through-base wafer vias for fabrication of stacked devices
CN102585705A (zh) * 2011-12-21 2012-07-18 上海新安纳电子科技有限公司 一种用于蓝宝石衬底的化学机械抛光液及其应用
CN103320018A (zh) * 2013-06-18 2013-09-25 常州时创能源科技有限公司 晶体硅抛光液的添加剂及其使用方法
US8932952B2 (en) 2010-04-30 2015-01-13 Sumco Corporation Method for polishing silicon wafer and polishing liquid therefor

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US7416962B2 (en) * 2002-08-30 2008-08-26 Siltronic Corporation Method for processing a semiconductor wafer including back side grinding
DE10247201A1 (de) * 2002-10-10 2003-12-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer polierten Siliciumscheibe
DE10258128A1 (de) * 2002-12-12 2004-07-15 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102009030292B4 (de) * 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
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DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial

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DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
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GB2420785A (en) * 2004-10-29 2006-06-07 Fujimi Inc Polishing composition
US20060090402A1 (en) * 2004-10-29 2006-05-04 Yasuhide Uemura Polishing composition
US20100056410A1 (en) * 2006-09-25 2010-03-04 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US8242020B2 (en) 2008-08-27 2012-08-14 Siltronic Ag Method for producing a semiconductor wafer
US20100055908A1 (en) * 2008-08-27 2010-03-04 Siltronic Ag Method for producing a semiconductor wafer
DE102008044646A1 (de) 2008-08-27 2010-03-25 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US20100323586A1 (en) * 2009-06-17 2010-12-23 Georg Pietsch Methods for producing and processing semiconductor wafers
DE102009025243A1 (de) * 2009-06-17 2010-12-30 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe
US8398878B2 (en) 2009-06-17 2013-03-19 Siltronic Ag Methods for producing and processing semiconductor wafers
DE102009025243B4 (de) * 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
US20100327414A1 (en) * 2009-06-24 2010-12-30 Siltronic Ag Method For Producing A Semiconductor Wafer
DE102009030295A1 (de) * 2009-06-24 2011-01-05 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009030295B4 (de) * 2009-06-24 2014-05-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US8389409B2 (en) 2009-06-24 2013-03-05 Siltronic Ag Method for producing a semiconductor wafer
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CN102029573A (zh) * 2009-10-07 2011-04-27 硅电子股份公司 用于研磨半导体晶片的方法
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