US20010050565A1 - Multi-point probe - Google Patents
Multi-point probe Download PDFInfo
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- US20010050565A1 US20010050565A1 US09/750,645 US75064500A US2001050565A1 US 20010050565 A1 US20010050565 A1 US 20010050565A1 US 75064500 A US75064500 A US 75064500A US 2001050565 A1 US2001050565 A1 US 2001050565A1
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- conductive
- multitude
- point
- probe
- point probe
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
- G01R1/06727—Cantilever beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/04—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant in circuits having distributed constants, e.g. having very long conductors or involving high frequencies
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
Definitions
- the present invention generally relates to the technique of testing electric properties on a specific location of a test sample and in particular the technique of probing and analysing semiconductor integrated circuits for example of LSI and VLSI complexity.
- the conventional four-point probe technique typically has the points positioned in an in-line configuration.
- a current By applying a current to the two peripheral points as shown in detail in FIG. 2, a voltage can be measured between the two inner points of the four point probe.
- the electric resistivity of the test sample can be determined through the equation
- the four-point probe generally consists of four tungsten or solid tungsten carbide tips positioned into contact with a test sample, being for example a semiconductor wafer.
- An external positioning system places the four-point probe into physical contact with the semiconductor wafer by moving the four-point probe in a perpendicular motion relative to the wafer surface.
- Pressure perpendicular to the wafer surface has to be applied to the four-point probe, in order to ensure that all four points obtain physical contact with for example an uneven wafer surface.
- the tips are separated by a distance d, shown in FIG. 1, typically in the order of 0.5 mm.
- SR Spreading Resistance
- the SR probe consists of two probe tips situated on one cantilever arm.
- the SR probe is brought into physical contact with wafer surface by an external positioning system, while monitoring the applied pressure such as to accurately control the physical contact to the uneven surface of a semiconductor wafer.
- the tips are situated on the same cantilever beam the pressure monitored while monitoring the maximum pressure may possibly leave one tip with an inferior physical contact.
- the prior art probes possess limitations as to miniaturisation of the testing technique as the probes hitherto known limit the maximum spacing between any two tips to a dimension in the order of 0.5 mm due to the production technique involving mechanical positioning and arresting of the individual testing pins or testing tips, in particular as far as the four-point probes are concerned, and as far as the SR-probes are concerned exhibit extreme complexity as far as the overall structure is concerned and also certain drawbacks as far as the utilisation of the SR-probe due to the overall structure of the SR-probe.
- An object of the present invention is to provide a novel testing probe allowing the testing of electronic circuits of a smaller dimension as compared to the prior art testing technique and in particular of providing a testing probe allowing a spacing between testing pins less than 0.5 mm such as in the order of 100 nm e.g. 1 nm ⁇ 1 ⁇ m or even smaller spacing.
- a particular advantage of the present invention is related to the fact that the novel testing technique involving a novel multi-point probe allows the probe to be utilised for establishing a reliable contact between any testing pin or testing tip and a specific location of the test sample, as the testing probe according to the present invention includes individually bendable or flexible probe arms.
- a particular feature of the present invention relates to the fact that the testing probe according to the present invention may be produced in a process compatible with the production of electronic circuits, allowing measurement electronics to be integrated on the testing probe, and allowing for tests to be performed on any device fabricated by any appropriate circuit technology involving planar technique, CMOS technique, thick-film technique or thin-film technique and also LSI and VLSI production techniques.
- said conducting probe arms originating from a process of producing said multi-point probe including producing said conductive probe arms on supporting wafer body in facial contact with said supporting wafer body and removal of a part of said wafer body providing said supporting body and providing said conductive probe arms freely extending from said supporting body.
- the multi-point probe according to the first aspect of the present invention is implemented in accordance with the technique of producing electronic circuits, in particular involving planar techniques as the probe is produced from a supporting body, originating from a wafer body on which a first multitude of conductive probe arms are produced involving deposition, accomplished by any technique known in the art, such as chemical vapour deposition (CVD), plasma enhanced CVD (PECVD), electron cyclotron resonance (ECR) or sputtering, etching or any other production technique, for example high resolution lithographic methods such as electron-beam lithography, atomic force microscopy (AFM) lithography or laser lithography, whereupon a part of the original supporting body is removed through mechanical grinding or etching producing the freely extending conducting probe arms characteristic to the present invention constituting the test pins of multi-point probes according to the first aspect of the present invention.
- CVD chemical vapour deposition
- PECVD plasma enhanced CVD
- ECR electron cyclotron resonance
- etching any other
- the above part, which is removed from the original wafer body, producing the body supporting the conductive probe arms may constitute a minor part or a major part of the original wafer body and, the supporting body may according to alternative embodiments of the multi-point probe according to the present invention dimensionally constitute a minor part or a major part as compared to the freely extending part of the conductive probe arms.
- the conductive probe arms characteristic to the multi-point probe according to the first aspect of the present invention according to the basic realisation of the present invention allow the contacting of the multi-point probe in an angular positioning of the conductive probe arms in relation to the surface of the test sample to be tested as distinct from the above described four-point probe, which is moved perpendicularly in relation to the surface of the test sample.
- the angular orientation of the conductive probe arms of the multi-point probe allows the flexible and elastically bendable conductive probe arms to contact any specific and intentional location of the test sample and establish a reliable electrical contact with the location in question.
- the multi-point probe according to the present invention including a first multitude of conductive probe arms may be configured in any appropriate configuration due to the utilisation of the production technique, allowing the conducting probe arms to be orientated in any mutual orientation in relation to one another and further in relation to the supporting body for complying with specific requirements such as a specific test sample to be tested.
- the particular feature of the present invention namely the possibility of utilising a production technique compatible with the techniques used for producing electronic circuits, allows the multi-point probe to be readily configured in accordance with specific requirements through the utilisation of existing CAD/CAM techniques for micro-systems.
- the first multitude of conductive probe arms are unidirectional constituting a multitude of parallel free extensions of the supporting body.
- the first multitude of conductive probe arms on one surface of the multi-point probe consists of a multiple of 2, ranging from at least 2 conductive probe arms to 64 conductive probe arms, having four conductive probe arms positioned on one surface as the presently preferred embodiment.
- Application of a test signal to the surface of the test sample between the two peripherally positioned conductive probe arms provides a resultant test signal between the two inner conductive probe arms, including information of the electric properties of the test sample.
- the first multitude of conductive probe arms of the multi-point probe have a rectangular cross section, with the dimensions defined as: width being parallel to the plane of the surface of the supporting body of the multi-point probe, depth being perpendicular to the plane of the surface of the supporting body of the multi-point probe and, length being the length of the conductive probe arms extending freely from the supporting body of the multi-point probe.
- the dimension ratios of the first multitude of conductive probe arms comprises ratios such as: length to width within the range 500:1 to 5:1, including ratios 50:1 and 10:1, having the ratio of 10:1 as the presently preferred embodiment, width to depth ratio within the range of 20:1 to 2:1, having the ratio of 10:1 as the presently preferred embodiment.
- the length of the first multitude of probe arms is in the range of 20 ⁇ m to 2 mm, having a length of 200 ⁇ m as the presently preferred embodiment.
- the separation of distal end-points of the conductive probe arms ranges from 1 ⁇ m to 1 mm, having 20 ⁇ m, 40 ⁇ m and 60 ⁇ m as the presently preferred embodiments.
- the dimensions of the multi-point probe according to the first aspect of the present invention varies as a function of the current state of the art in production technology and are therefore not a limitation to the present invention.
- the distal ends of the first multitude of conductive probe arms comprise a variety of optional shapes in continuation of the end of the length opposing the supporting body of the multi-point probe according to the first aspect of the present invention.
- the continuation of the length of the freely extending conductive probe arms include shapes as pointed distal end-points, tapered distal end-points or enlarged circular, elliptic or orthogonal squared distal ends or combinations thereof.
- the elaboration of the distal end-points of the first multitude of the conductive probe arms allows for optimisation of measurements of electric properties of the test sample, that being resistive, capacitive or inductive electric properties of the test sample at frequencies ranging from DC to RF including frequencies in the LF range and the HF range.
- the multi-point probe according to the first aspect of the present invention further comprises, in accordance with specific requirements, a second multitude of conductive electrodes situated on co-planar, elevated or undercut areas between the first multitude of conductive probe arms on the supporting body.
- the second multitude of conductive electrodes are suitable for active guarding of the first multitude of conductive probe arms to significantly reduce leakage resistance and, consequently, increase the measuring accuracy of the present invention.
- the material of the supporting body of the multi-point probe according to the first aspect of the present invention comprises ceramic materials or semi-conducting materials such as Ge, Si or combinations thereof.
- Use of the semi-conducting materials Ge, Si or combinations thereof allows for the micro-fabrication technology in the manufacturing process of the multi-point probe, hence benefiting from the advantages of the micro-fabrication technology.
- the conductive layer on the top surface of the first multitude of conductive probe arms and the conductive layer of the second multitude of conductive electrodes on the multi-point probe according to the first aspect of the present invention is made by conducting materials such as Au, Ag, Pt, Ni, Ta, Ti, Cr, Cu, Os, W, Mo, Ir, Pd, Cd, Re, conductive diamond, metal suicides or any combinations thereof.
- a multi-point probe for testing electric properties on a specific location of a test sample and further comprising:
- said conductive tip elements originating from a process of metallization of electron beam depositions on said first multitude of conductive probe arms at said distal ends thereof.
- This particular aspect of the presently preferred embodiment of the present invention may provide an extremely small separation of conductive tip elements and therefor may provide a measuring tool for a wide variety of possible test samples having extremely small dimensions.
- the third multitude of conductive tip elements may comprise a primary section and a secondary section, the conductive tip elements are connected to the conductive probe arms through respective primary sections thereof and the secondary sections defining free contacting ends. This may provide several optional configurations and designs of the multi-point probe.
- the multi-point probe according to the particular aspect of the present invention defines a first axial direction for each of the primary sections, the first axial direction constituting an increase of the total distance between the supporting body and the free contacting ends.
- the axial direction of the primary section constitutes a decrease of separation between the free contacting ends of the third multitude of conductive tip elements or constitutes a decrease of separation between free contacting ends of the third multitude of conductive tip elements being adjacent.
- a second axial direction is defined for each of the secondary sections, the second axial direction constituting an increase of the total distance between the supporting body and the free contacting ends.
- the second axial direction of the secondary section constitutes a decrease of separation between the free contacting ends of the third multitude of conductive tip elements.
- the secondary axial direction of the secondary section constitutes a decrease of separation between the free contacting ends of the third multitude of conductive tip elements being adjacent.
- first axial direction of the primary sections extends in a direction parallel to the plane defined by the first surface of the supporting body or in a direction converging towards the plane defined by the second surface of the supporting body.
- second axial direction of the secondary sections extend in a direction parallel to the plane defined by the first surface of the supporting body or in a direction converging towards the plane defined by the second surface of the supporting body.
- the third multitude of conductive tip elements may be equal to the first multitude of conductive probe arms, less than the first multitude of conductive probe arms, or greater than the first multitude of conductive probe arms, the preferable application having third multitude of conductive tip elements being dividable with 2.
- the third multitude of conductive tip elements have a separation of the free contacting ends of the conductive tip elements in the range of 1 nm-100 nm, preferable application having the separations of 2 nm, 5 nm, 10 nm, 20 nm, 50 nm, 100 nm.
- the dimension of the conductive tip elements define an overall length as distance between the distal ends of conductive probe arms and the free contacting ends of the conductive tip elements, the overall length is in the range of 100 nm to 100 ⁇ m, the preferable application having the overall length in the ranges 500 nm to 50 ⁇ m and 1 ⁇ m to 10 ⁇ m, and define a diameter, the diameter being in the range of 10 nm to 1 ⁇ m, preferable application having the overall length in the ranges 50 nm to 500 nm.
- the material utilised in producing the third multitude of conductive tip elements may mainly consist of carbon and further consist of a concentration of contaminants.
- the third multitude of conductive tip elements may originate from a process of tilted electron beam deposition, a process of perpendicular electron beam deposition, or a process of a combination of tilted electron beam deposition and perpendicular electron beam deposition.
- the metallization of the third multitude of conductive tip elements may originate from a process of in-situ metallic deposition or a process of ex-situ metallic deposition.
- a multi-point testing apparatus for testing electric properties on a specific location of a test sample comprising:
- electric properties testing means including electric generator means for generating a test signal and electric measuring means for detecting a measuring signal;
- a multi-point probe comprising:
- said conducting probe arms originating from a process of producing said multi-point probe including producing said conductive probe arms on supporting wafer body in facial contact with said supporting wafer body and removal of a part of said wafer body providing said supporting body and providing said conductive probe arms freely extending from said supporting body;
- the multi-point testing apparatus basically includes a multi-point probe according to the first aspect of the present invention, which multi-point probe, constituting a component of the multi-point testing apparatus according to second aspect of the present invention, may be implemented in accordance with any of the above features of the multi-point probe according to the first aspect of the present invention.
- the multi-point testing apparatus includes electric properties testing means for testing the test sample comprising an electric generator means providing a test signal to the surface of the test sample, that being current or voltage, pulsed signal or signals, DC or AC having sinusoidal, squared, triangled signal contents or combinations thereof, ranging from LF to RF including HF, in accordance with specific requirements such as measurements of resistance, inductance, capacitance, slew rate, unity gain bandwidth and 3 dB bandwidth.
- the electric properties testing means further comprises an electric measuring means providing facilities for detecting a measuring signal of the above described test signal types and frequency ranges, and providing extensive electric properties testing information and including functionalities as Fast Fourier Transformation (FFT), phase lock and real time visualisation of measured test signal.
- the electric properties testing means features probing means for probing of the test sample, in accordance with specific requirements, so as to perform the link between the surface of the test sample and the electric properties testing means.
- the multi-point testing apparatus also includes reciprocating means for holding a multi-point probe according to the first aspect of the present invention, and positioning of the multi-point probe according to the first aspect of the present invention relative to the test sample so as to cause the conductive probe arms to obtain physical contact with a specific location on the surface of the test sample for performing the testing of the electric properties, and for recording of the specific location of the multi-point probe according to the first aspect of the present invention relative to the test sample, having a resolution of 0.1 ⁇ m or even smaller in all spatial directions.
- An object of having full manoeuvrability in all spatial directions, that being co-planar to the surface of the test sample or perpendicular to the surface of the test sample, is to allow for multiple point measurements utilising one calibrated multi-point probe according to the first aspect of the present invention on a full surface of a test sample, hence avoiding inaccuracies due to a multiple of calibration discrepancies.
- the manoeuvrability includes angular movements along an axis parallel to surface of the test sample, providing an angle between the surface of the test sample and the length of the conductive probe arms on the multi-point probe according to the first aspect of the invention, thus utilising the flexibility of the conductive probe arms to insure against possible destruction or deterioration of devices on the surface of the test sample, and along an axis perpendicular to the surface of the test sample providing a 360° rotation of the multi-point probe according to the first aspect of the present invention enableling measurements on devices on the surface of the test sample having any mutual relative co-planar angular positions.
- the multi-point testing apparatus further includes means for sensing physical contact between the surface of the test sample and the multiple of conductive probe arms of the multi-point probe according to the first aspect of the present invention insuring non-destructive testing of the test sample and hence avoiding the destruction of possible devices on the surface of the test sample.
- the method of producing the multi-point probe in accordance with a third aspect of the present invention may involve any relevant production technique allowing the production of the freely extending conductive probe arms extending freely in relation to the supporting body.
- Techniques of relevance and interest are based on semiconductor micro-fabrication technology, thick-film technique, thin-film technique or combinations thereof.
- Producing the third multitude of conductive tip elements comprises following steps:
- the method of producing the multi-point probe in accordance with a third aspect of the present invention may furthermore the technique of applying a conductive layer to the third multitude of conductive tip elements extending from the distal end of the first multitude of conductive probe arms may involve metallization of the electron beam depositions.
- FIG. 1 provides an overall illustration of the conventional four-point probe measurement technique on a test sample
- FIG. 2 shows a detailed illustration of the measurement technique depicted in FIG. 1;
- FIG. 3 depicts the substrate after patterning a deposited support layer
- FIG. 4 illustrates the formation of the cantilevers by removal of part of the substrate
- FIG. 5 depicts the etching of the substrate to undercut the pattern in the support layer
- FIG. 6 depicts the deposition of an electrically conducting layer
- FIG. 7 depicts a set-up for measuring a test sample using a multi-point probe made in accordance with the present invention
- FIG. 8 illustrates a set-up having a multi-point probe made in accordance with the present invention mounted on an optical microscope
- FIG. 9 pictures a detachable multi-point probe in a semi-conducting wafer
- FIG. 10 shows a principal diagram of the circuit used for performing measurements, comprising an electrometer and a current source
- FIG. 11 shows an electron beam deposition.
- (a) shows a perpendicular electron beam disposition and
- (b) shows a tilted electron beam deposition either on the substrate or as continuation on top of an previously produced tip;
- FIG. 12 shows metallization of tip.
- (a) shows in-situ metallization of tip applying conducting contaminants and
- (b) shows ex-situ metallization of tip applying subsequent metallization;
- FIG. 13 shows probe geometry having tips extending from probe arms
- FIG. 14 shows general tip configurations.
- FIG. 15 shows tip fabrication of probe.
- (a) shows initial view.
- a tip is grown on probe arm 1 .
- (b) shows the sample rotated/tilted hereby obtaining a mirrored view.
- a tip is grown on probe arm 2 on the pointing line of tip 1 .
- (c)-(d) shows the result of repeating the procedure until the gap G is slightly larger than the intended gap G′.
- (e) shows the sample rotated to obtain a frontal view, however additionally tilted to obtain the chosen angle ⁇ ′ of the secondary tips.
- (f)-(g) shows the secondary tips grown on both tip ends.
- (h) shows the intended gap G′ and the lengths tuned by repeating steps (f)-(g).
- FIG. 16 shows scanning electron microscope pictures of the fabrication sequence (identical to FIG. 15).
- a preferred embodiment is directed toward making a multi-point probe and is described with respect to FIGS. 3 - 6 .
- FIG. 3 shows a wafer 10 , for example a section of a semiconductor wafer, in intermediate state of fabrication. It shows a surface 16 of a substrate 12 covered by a support layer 14 , being electrically isolating, such as silicon oxide.
- the deposition of the support layer 14 can be accomplished by any technique known in the art, such as chemical vapour deposition (CVD), plasma enhanced CVD (PECVD), electron cyclotron resonance (ECR) or sputtering.
- CVD chemical vapour deposition
- PECVD plasma enhanced CVD
- ECR electron cyclotron resonance
- the support layer 14 is patterned and etched to form beams with tapered end-points 14 a - d .
- the beams are not limited to any particular form or symmetry; they can be of any geometry with suitable end-points.
- the pattern is formed by forming a photoresist pattern (not shown in FIG. 3) which defines the four beams on the top surface of the support layer 14 .
- the photoresist pattern is formed by conventional photolithographic photoresist formation, exposure, development and removal techniques.
- the support layer is then etched using any technique known in the art, such as dry etching or wet etching, until the unmasked parts of the support layer 14 are removed from the top surface of the substrate.
- the four beams or part of them can be defined using high-resolution lithographic methods such as electron-beam lithography, atomic force microscopy (AFM) lithography or laser lithography.
- high-resolution lithographic methods such as electron-beam lithography, atomic force microscopy (AFM) lithography or laser lithography.
- the substrate is partially removed to release the patterned support layer, forming four cantilevers with sharpened endpoints 14 a - d , as illustrated in FIG. 4.
- the substrate is removed by depositing a protective layer (not shown in FIG. 4) of silicon nitride on top and bottom surface of the substrate 12 .
- a photoresist pattern is formed on the bottom surface of the substrate by conventional photolithographic photoresist formation, exposure, development and removal techniques.
- the nitride layer is then removed in the unmasked areas on the bottom surface of the substrate using Reactive Ion Etch (RIE) in a plasma containing SF 6 and O 2 or similar reagents, and the substrate is etched using an etching chemistry comprising potassium hydroxide (KOH) or a similar chemistry until the freely extending probe arms are exposed.
- RIE Reactive Ion Etch
- KOH potassium hydroxide
- the protecting layer of nitride is removed from the top surface of the substrate using RIE, or using wet etching with a chemistry comprising phosphoric acid (H 3 PO 4 ) or a similar chemistry.
- FIG. 5 illustrates the etching of the substrate 12 to undercut the support layer 14 .
- this etching step is performed with a dry etching method, such as an isotropic RIE etch.
- the final stage of fabrication is shown in FIG. 6, and involves the deposition of an electrically conducting layer 18 on the top surface of the wafer.
- the conducting layer is made of conducting materials like Au, Ag, Pt, Ni, Ta, Ti, Cr, Cu, Os, W, Mo, Ir, Pd, Cd, Re, conductive diamond, metal silicides or combinations thereof.
- the conducting layer can be made of a highly doped semiconducting material.
- the conducting layer can be deposited using electron-beam evaporation, or any other similar technique known in the art.
- the electrically conducting layer will not create conducting paths between the four beams made in the support layer, and thus four isolated electrodes are formed on the top surface of the support beams, and thus points 18 a - d can be connected through the beams to an external positioning and measuring device (not shown in FIG. 6).
- the deposition of the conducting layer creates electrodes on the substrate.
- these electrodes are used for active guarding of the conductive probe arms to significantly reduce leakage resistance and, consequently, increase the measuring accuracy of the invention.
- the minimum probe end-point separation s is approximately 1 ⁇ m.
- the minimum probe end-point separation is however determined by the current state of the art in micro-fabrication technology and not any limitation of the present invention. Thus, as micro-fabrication technology produces smaller and smaller devices, the minimum probe end-point separation s can also be reduced.
- an external positioning device places a multi-point probe made according to the present invention into physical contact with the surface of the test sample. Once electrical contact between the surface of the test sample and all four conductive probe arms has been achieved, a current is applied to two of the conductive probe arms and a corresponding voltage is measured between the two other conductive arms.
- the method for applying the current and detecting the voltage can be any method known in the art.
- FIG. 7 The preferred embodiment of the multi-point testing apparatus of the present invention is shown in FIG. 7.
- the figure depicts a multi-point testing apparatus 100 , a test sample 110 is mounted on a stage 112 with an XYZ positioning mechanism. This mechanism can be controlled automatically or manually.
- a multi-point probe made according to present invention 102 is mounted above the surface of the test sample on a probe holder 104 which can be moved in the Z direction with a resolution of 0.1 ⁇ m or better.
- the probe holder 104 can be controlled with similar spatial resolution in the X and Y directions.
- the set-up 100 is similar to that of an AFM or a Scanning Tunnelling Microscope (STM).
- Connections 114 from the probe end-points are input to a controller 106 , which can move the multi-point probe with respect to the test sample 110 .
- a connection 116 from the test sample 110 can also be input to the controller 106 .
- the controller 106 can be a computer or a programmed micro-controller. By monitoring the four point resistance using the end-points of the four probe arms or the two point resistances between the end-points of the four probe arms and the test sample 110 , the controller 106 can move the multi-point probe towards the test sample until all end-points of the four probe arms are in physical contact with the test sample.
- the controller 106 analyses the measured data and displays measurement information on display 108 .
- the controller 106 may retract the multi-point probe, move the test sample 110 in the XY plane and repeat the procedure.
- FIG. 8 illustrates a similar apparatus 200 where the test sample stage consists of a XY positioned 222 on a standard optical microscope 214 .
- a multi-point probe made in accordance to the present invention 202 is placed on a probe holder 204 , which is mounted on a microscope objective 212 , allowing the operator to identify features on the test sample surface and perform four point probe measurements at these features. In this manner ⁇ m sized test sample features such as single microelectronic devices or polycrystalline grains can be probed in a controlled fashion. Similar to the previously described apparatus 100 , illustrated in FIG.
- the four leads 218 from the probe are input to a controller 206 as well as a lead 216 connecting to the test sample; the controller outputs signals 220 controlling the movement of the probe holder, and the controller 206 analyses and presents the measurement data on display 208 .
- FIG. 9 pictures a detachable multi-point probe in a semi-conducting wafer.
- a wafer can consist of several multi-point probes, which are detachable from the wafer. This production technique provides an extremely repeatable and safe method of fabrication of multi-point probes.
- FIG. 10 shows a principal diagram of the circuit used for performing measurements, comprising an electrometer and a current source. Applying integrated circuit techniques for the fabrication of multi-point probes enables the possible integration of the electrometer, current source and additional circuit on the wafer.
- FIG. 11( a ) shows such an electron beam deposition grown from a surface 1105 of a probe arm having the electron beam 1103 in a perpendicular relation to the surface thus creating a primary tip 1101 having an axis perpendicular to surface plane.
- a tilted electron beam deposition grows either on the surface 1113 of substrate as a primary tip 1111 or as a secondary tip 1109 in continuation on top of a previously produced tip 1107 perpendicular to the surface 1113 .
- the electric properties of the tips may be modified by applying contaminants 1203 to a tip 1201 utilising an injection of metallo-organic compound at low partial pressure, hereby obtaining tips with resistances as low as 900 ⁇ (in-situ metallization).
- the electric properties of the tips may also be modified by applying a metallic cloud or evaporation 1209 creating metallic layers 1205 , 1207 on the tip 1201 and on the surface 1105 subsequent to finalising the tip growth (ex-situ metallization). By applying subsequent evaporations 1209 using two or more application angles a good metallic coverage of the tip 1101 and the surface 1105 are achieved, thus providing useful tips 1101 .
- FIG. 12 shows both methods for metallization of tips.
- FIG. 13 The geometry of a probe is shown in FIG. 13 in top view, side view and front view.
- the probe is shown having to probe arms 1301 on to which primary tips 1303 have been grown by utilising electron beam deposition.
- the primary tips 1303 create an angle 1307 ( ⁇ 1) between direction of axial length of the probe arm 1301 and direction of axial length of primary tips 1303 .
- Secondary tips 1305 extend from the primary tips 1303 on the probe arms 1301 .
- the primary tips 1303 furthermore have an inclination 1309 ( ⁇ 1) and the secondary tip 1305 and additional inclination 1311 ( ⁇ 2) in relation to the direction of the axial length of the probe arm 1301 .
- FIG. 14( a ) shows four parallel probe arms, two outer probe arms 1401 and the two inner probe arms 1301 having two primary tips 1303 positioned on the two inner probe arms 1301 .
- the two primary tips 1303 create an angle in relation to axial direction of the inner probe arms 1301 such that the primary tips 1303 point a common orientation.
- FIG. 14( b ) shows the four parallel probe arms 1301 , 1401 having four primary tips 1303 , 1403 positioned so that the end point have equal tip separations.
- FIG. 14( c ) shows the four probe arms 1301 , 1401 each having primary tips 1303 , 1403 extending from distal end.
- FIGS. 14 ( d ) to ( f ) show secondary tips 1305 , 1405 added to the primary tips 1303 , 1403 .
- FIG. 15( a ) shows the two probe arms 1301 having distal ends defined as 1501 and 1505 .
- the electron beam is aimed at a corner 1503 of the surface of the distal end 1505 , hereby producing the primary tip 1303 .
- the electron beam is subsequently aimed at a corner 1507 of the surface of the distal end 1501 , hereby producing the second primary tip 1301 . This procedure is repeated until the separation between the two primary tips 1301 is slightly larger than the intended gap G′ between the primary tips 1301 .
- the primary tips 1303 create an angle in relation to axial direction of probe arms 1301 and an angle in relation to the surfaces of the distal ends 1501 , 1505 such that the primary tips 1303 point away from the supporting body of the multi-point probe.
- the secondary tips 1305 furthermore create an angle in relation to axial direction of the primary tips 1303 .
- the multi-point probe is rotated as shown in FIG. 15( e ).
- FIG. 16 shows electron microscope pictures of the fabrication scheme presented above and in FIG. 15.
- the probe chips (illustrated in FIG. 9) are broken out of the wafers and are mounted on ceramic dies (5 mm ⁇ 10 mm) with four big thick-film electrode pads, using epoxy.
- the conductive probe arms on the silicon chips are connected to the pads on the ceramic dies by bonding 25 ⁇ m thick gold wires between them, using a Kulicke-Soffa wedge-bonding machine.
- the ceramic chips are fixed mechanically and contacted electrically on an aluminium mount, which is machined to fit around a microscope objective on a Karl-Suss probe station.
- the mount allows the conductive probe arms of the multi-point probe to be in focus in the middle of the field of view of the microscope.
- the test sample can then be moved into focus using the normal vertical stage of the microscope. When the test sample is in focus the multi-point probe will contact the test sample and a measurement can be performed.
- This set-up is similar to the general illustration in FIG. 8.
- FIG. 10 Electronics consisting of an electrometer and a current source is built into the aluminium mount to minimise the distance between the probe and the electronics. This keeps the noise in the measurements at a minimum.
- the principal diagram of the circuit is shown in FIG. 10.
- the two inner conductive probe arms of the multi-point probe are connected to an electrometer (an instrumentation amplifier) with an input impedance of more than 10 G ⁇ and an amplification factor of 5000.
- the peripheral two conductive probe arms of the probe are connected to the current source (a differential voltage to current converter) which delivers an adjustable output in the range of 10 nA to 1 ⁇ A.
- the current output is proportional to the voltage difference V1-V2.
- These voltages are generated externally by a computer equipped with a digital to analogue converter. The same computer detects the output voltage Vo of the electrometer through an attached analogue to digital converter. Batteries power the circuit in order to make it float with respect to ground.
- a measurement is performed by sampling the voltage of the electrometer for both polarities of the current, taking the average of the two values. This averaging procedure is useful for eliminating thermal drift in the electronics.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Tests Of Electronic Circuits (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Mechanical Pencils And Projecting And Retracting Systems Therefor, And Multi-System Writing Instruments (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/098,969 US7304486B2 (en) | 1998-07-08 | 2002-03-14 | Nano-drive for high resolution positioning and for positioning of a multi-point probe |
US10/675,886 US7323890B2 (en) | 1998-07-08 | 2003-09-30 | Multi-point probe |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98610023A EP0974845A1 (en) | 1998-07-08 | 1998-07-08 | Apparatus for testing electric properties using a multi-point probe |
EP98610023.8 | 1998-07-08 | ||
DKPA199900378 | 1999-03-17 | ||
PCT/DK1999/000391 WO2000003252A2 (en) | 1998-07-08 | 1999-07-08 | Multi-point probe |
Related Parent Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DK1999/000319 Continuation WO1999064453A1 (en) | 1998-06-10 | 1999-06-10 | Purification process for production of mannan-binding lectin and an mbl medicinal product |
PCT/DK1999/000391 Continuation WO2000003252A2 (en) | 1998-07-08 | 1999-07-08 | Multi-point probe |
PCT/DK2000/000513 Continuation WO2001020347A1 (en) | 1998-07-08 | 2000-09-15 | Nano-drive for high resolution positioning and for positioning of a multi-point probe |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/098,969 Continuation-In-Part US7304486B2 (en) | 1998-07-08 | 2002-03-14 | Nano-drive for high resolution positioning and for positioning of a multi-point probe |
US10/675,886 Continuation US7323890B2 (en) | 1998-07-08 | 2003-09-30 | Multi-point probe |
Publications (1)
Publication Number | Publication Date |
---|---|
US20010050565A1 true US20010050565A1 (en) | 2001-12-13 |
Family
ID=26063886
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/750,645 Abandoned US20010050565A1 (en) | 1998-07-08 | 2000-12-28 | Multi-point probe |
US10/675,886 Expired - Lifetime US7323890B2 (en) | 1998-07-08 | 2003-09-30 | Multi-point probe |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/675,886 Expired - Lifetime US7323890B2 (en) | 1998-07-08 | 2003-09-30 | Multi-point probe |
Country Status (8)
Country | Link |
---|---|
US (2) | US20010050565A1 (ja) |
EP (1) | EP1095282B1 (ja) |
JP (1) | JP4685240B2 (ja) |
AT (1) | ATE373830T1 (ja) |
AU (1) | AU4897399A (ja) |
CA (1) | CA2336531A1 (ja) |
DE (1) | DE69937147T2 (ja) |
WO (1) | WO2000003252A2 (ja) |
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- 1999-07-08 WO PCT/DK1999/000391 patent/WO2000003252A2/en active IP Right Grant
- 1999-07-08 DE DE69937147T patent/DE69937147T2/de not_active Expired - Lifetime
- 1999-07-08 EP EP99932677A patent/EP1095282B1/en not_active Revoked
- 1999-07-08 JP JP2000559436A patent/JP4685240B2/ja not_active Expired - Lifetime
- 1999-07-08 CA CA002336531A patent/CA2336531A1/en not_active Abandoned
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2000
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2003
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WO2003060529A1 (de) * | 2002-01-16 | 2003-07-24 | Gfd Gesellschaft Für Diamantprodukte Mbh | Messspitzensystem und verfahren zu dessen herstellung |
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US20120119770A1 (en) * | 2009-03-31 | 2012-05-17 | Henrik Baekbo | Automated multi-point probe manipulation |
US8836358B2 (en) * | 2009-03-31 | 2014-09-16 | Capres A/S | Automated multi-point probe manipulation |
US20150042367A1 (en) * | 2013-08-06 | 2015-02-12 | Samsung Electro-Mechanics Co., Ltd. | Thickness measurement device and method for measuring thickness |
CN111316110A (zh) * | 2017-11-15 | 2020-06-19 | 卡普雷斯股份有限公司 | 用于测试测试样品电气性能的探针和相关的接近探测器 |
US11693028B2 (en) | 2017-11-15 | 2023-07-04 | Kla Corporation | Probe for testing an electrical property of a test sample |
US11125779B2 (en) | 2018-11-15 | 2021-09-21 | Rohde & Schwarz Gmbh & Co. Kg | Probe with radio frequency power detector, test system and test method |
US11444142B2 (en) * | 2019-06-13 | 2022-09-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel and preparation method, detection method and display device thereof |
US20220373583A1 (en) * | 2021-05-21 | 2022-11-24 | Fujifilm Business Innovation Corp. | Sheet electric resistance measuring instrument |
US11802896B2 (en) * | 2021-05-21 | 2023-10-31 | Fujifilm Business Innovation Corp. | Sheet electric resistance measuring instrument |
CN114814314A (zh) * | 2022-04-18 | 2022-07-29 | 苏州伊欧陆系统集成有限公司 | 一种多触点高电流高电压测试探针 |
Also Published As
Publication number | Publication date |
---|---|
ATE373830T1 (de) | 2007-10-15 |
DE69937147T2 (de) | 2008-06-19 |
EP1095282B1 (en) | 2007-09-19 |
US20040056674A1 (en) | 2004-03-25 |
WO2000003252A2 (en) | 2000-01-20 |
EP1095282A2 (en) | 2001-05-02 |
US7323890B2 (en) | 2008-01-29 |
DE69937147D1 (de) | 2007-10-31 |
JP4685240B2 (ja) | 2011-05-18 |
CA2336531A1 (en) | 2000-01-20 |
AU4897399A (en) | 2000-02-01 |
JP2002520596A (ja) | 2002-07-09 |
WO2000003252A3 (en) | 2000-04-13 |
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Owner name: CAPRES APS, DENMARK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:PETERSEN, CHRISTIAN LETH;GREY, FRANCOIS;BOGGILD, PETER;REEL/FRAME:011738/0264 Effective date: 20010118 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |