US12191153B2 - Substrate processing apparatus, substrate processing system and substrate processing method - Google Patents

Substrate processing apparatus, substrate processing system and substrate processing method Download PDF

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Publication number
US12191153B2
US12191153B2 US17/627,147 US202017627147A US12191153B2 US 12191153 B2 US12191153 B2 US 12191153B2 US 202017627147 A US202017627147 A US 202017627147A US 12191153 B2 US12191153 B2 US 12191153B2
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substrate
processing
chuck
processing unit
main surface
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US20220277962A1 (en
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Munehisa Kodama
Tomohiro Kaneko
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H01L21/30604—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q1/00—Members which are comprised in the general build-up of a form of machine, particularly relatively large fixed members
    • B23Q1/25—Movable or adjustable work or tool supports
    • B23Q1/64—Movable or adjustable work or tool supports characterised by the purpose of the movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q1/00—Members which are comprised in the general build-up of a form of machine, particularly relatively large fixed members
    • B23Q1/25—Movable or adjustable work or tool supports
    • B23Q1/64—Movable or adjustable work or tool supports characterised by the purpose of the movement
    • B23Q1/66—Worktables interchangeably movable into operating positions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
    • B23Q3/06—Work-clamping means
    • B23Q3/08—Work-clamping means other than mechanically-actuated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0069—Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/06—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving conveyor belts, a sequence of travelling work-tables or the like
    • H01L21/02057—
    • H01L21/67023—
    • H01L21/6708—
    • H01L21/68764—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates

Definitions

  • the various aspects and embodiments described herein pertain generally to a substrate processing apparatus, a substrate processing system, and a substrate processing method.
  • a grinding apparatus of Patent Document 1 includes a rotary table and a plurality of substrate chucks arranged around a rotation center line of the rotary table at a regular distance therebetween.
  • the plurality of substrate chucks are revolved about the rotation center line of the rotary table along with the rotary table.
  • the rotary table sequentially sends each of the plurality of substrate chucks to a holding/releasing position where holding and releasing of the holding of a substrate are performed, a first grinding position where a first grinding of the substrate is performed, and a second grinding position where a second grinding of the substrate is performed.
  • Patent Document 1 Japanese Patent Laid-open Publication No. 2008-264913
  • Exemplary embodiments provide a technique enabling to perform both a processing of a first main surface of a substrate and a processing of a second main surface of the substrate opposite to the first main surface on a single rotary table.
  • a substrate processing apparatus includes a pair of first substrate chucks each configured to hold a substrate from below while allowing a first main surface of the substrate to face upwards; a pair of second substrate chucks each configured to hold the substrate from below while allowing a second main surface of the substrate opposite to the first main surface to face upwards; a rotary table which holds, around a vertical rotation axis thereof, a first one of the pair of first substrate chucks, a first one of the pair of second substrate chucks, a second one of the pair of first substrate chucks, and a second one of the pair of second substrate chucks in this sequence at a regular distance therebetween, and which is configured to be rotated about the rotation axis; a first processing unit equipped with a first processing tool configured to process the first main surface of the substrate held by the first substrate chuck; and a second processing unit equipped with a second processing tool configured to process the second main surface of the substrate held by the second substrate chuck.
  • FIG. 1 is a plan view illustrating a substrate processing system according to an exemplary embodiment.
  • FIG. 2 is a side view illustrating the substrate processing system of FIG. 1 .
  • FIG. 3 is a side view illustrating an example of a substrate.
  • FIG. 4 is a flowchart illustrating a substrate processing method according to the exemplary embodiment.
  • FIG. 5 is a plan view illustrating a substrate processing apparatus according to the exemplary embodiment.
  • FIG. 6 is a side view illustrating a first operating unit and a first elevating unit of FIG. 5 .
  • FIG. 7 is a plan view illustrating a trajectory of whetstones and a substrate of FIG. 6 .
  • FIG. 8 is a side view illustrating a first tilt angle adjusting unit of FIG. 5 .
  • FIG. 9 A is a plan view illustrating a rotational operation of a rotary table of FIG. 5 .
  • FIG. 9 B is a plan view illustrating the rotational operation of the rotary table of FIG. 5 following that of FIG. 9 A .
  • FIG. 10 is a timing chart illustrating processings performed at a first position, a second position, a third position, and a fourth position of FIG. 5 .
  • FIG. 11 is a flowchart illustrating processings performed by using a first substrate chuck in a range from a time t 1 to a time t 2 of FIG. 10 .
  • FIG. 12 is a plan view illustrating a substrate processing apparatus according to a modification example.
  • FIG. 13 A is a plan view illustrating a rotational operation of the rotary table of FIG. 12 .
  • FIG. 13 B is a plan view illustrating the rotational operation of the rotary table of FIG. 12 following that of FIG. 13 A .
  • FIG. 13 C is a plan view illustrating the rotational operation of the rotary table of FIG. 12 following that of FIG. 13 B .
  • FIG. 13 D is a plan view illustrating the rotational operation of the rotary table of FIG. 12 following that of FIG. 13 C .
  • FIG. 14 is a timing chart illustrating processings performed at a first position, a second position, a third position, and a fourth position of FIG. 12 .
  • FIG. 15 is a flowchart illustrating processings performed by the first substrate chuck in a range from a time t 1 and a time t 2 of FIG. 14 .
  • the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other.
  • the X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is a vertical direction.
  • FIG. 1 is a plan view illustrating a substrate processing system according to an exemplary embodiment.
  • FIG. 2 is a side view illustrating an example of the substrate processing system of FIG. 1 .
  • illustration of a third transfer block 5 c will be omitted.
  • a substrate processing system 1 is configured to grind and planarize a substrate 10 .
  • the substrate 10 is, for example, a semiconductor substrate such as a silicon wafer.
  • the substrate 10 is prepared by slicing an ingot.
  • the substrate 10 has a first main surface 11 and a second main surface 12 opposite to the first main surface 11 .
  • the first main surface 11 and the second main surface 12 are distinguished by using, for example, a mark formed on the substrate 10 in advance. Further, the first main surface 11 and the second main surface 12 may be defined as a top surface and a bottom surface of the substrate 10 before being processed when it is accommodated in a cassette C. The top surface may be the first main surface 11 and the bottom surface may be the second main surface 12 , or vice versa.
  • the substrate processing system 1 grinds both the first main surface 11 and the second main surface 12 of the substrate 10 .
  • the substrate processing system 1 grinds the first main surface 11 of the substrate 10 , and grinds the second main surface 12 opposite to the first main surface 11 which has been ground.
  • the substrate processing system 1 includes, as illustrated in FIG. 1 , a carry-in/out station 2 , a first processing station 3 , a second processing station 5 , and a control device 9 .
  • the carry-in/out station 2 , the first processing station 3 , and the second processing station 5 are arranged in this order from the negative X-axis side to the positive X-axis side.
  • the carry-in/out station 2 has a carry-in/out block 2 a and a first transfer block 2 b .
  • the first transfer block 2 b is disposed next to the carry-in/out block 2 a , for example, on the positive X-axis side of the carry-in/out block 2 a . Further, the first transfer block 2 b is disposed next to a first processing block 3 a of the first processing station 3 , for example, on the negative X-axis side of the first processing block 3 a.
  • the carry-in/out block 2 a includes a plurality of placing units 21 arranged in a row in the Y-axis direction.
  • a cassette C is disposed in each of the plurality of placing units 21 .
  • the cassette C accommodates therein a plurality of substrates 10 at a regular distance therebetween in a vertical direction.
  • the number of the placing units 21 is not particularly limited.
  • the number of the cassettes C is not particularly limited, either.
  • a first transfer device 22 is provided in the first transfer block 2 b .
  • the first transfer device 22 has a holder configured to hold the substrate 10 .
  • the holder is configured to be movable in horizontal directions (both in the X-axis direction and the Y-axis direction) and in a vertical direction and pivotable around a vertical axis.
  • the first transfer device 22 transfers the substrates 10 to/from the plurality of cassettes C disposed in the plurality of placing units 21 and the first processing block 3 a of the first processing station 3 .
  • the first processing station 3 includes the first processing block 3 a , a second processing block 3 b , and a second transfer block 3 c .
  • the second transfer block 3 c is disposed next to the first processing block 3 a and the second processing block 3 b , for example, on the positive X-axis side of the first processing block 3 a and on the positive Y-axis side of the second processing block 3 b .
  • the second transfer block 3 c is disposed next to the third processing block 5 a of the second processing station 5 and, for example, on the negative X-axis side of the third processing block 5 a.
  • a second transfer device 31 is disposed in the second transfer block 3 c .
  • the second transfer device 31 has a holder configured to hold the substrate 10 .
  • the holder is configured to be movable in the horizontal directions (both in the X-axis direction and the Y-axis direction) and in the vertical direction and pivotable around a vertical axis.
  • the second transfer device 31 is configured to transfer the substrates 10 to/from the first processing block 3 a , the second processing block 3 b , and the third processing block 5 a of the second processing station 5 .
  • the first processing block 3 a includes, for example, a first transition device 32 , a second transition device 33 , and a first inverting device 34 , as shown in FIG. 2 .
  • the first transition device 32 is configured to receive the substrate 10 from the first transfer device 22 and temporarily store therein the substrate 10 until the substrate 10 is handed over to the second transfer device 31 later.
  • the second transition device 33 is configured to receive the substrate 10 from the second transfer device 31 and temporarily store therein the substrate 10 until the substrate 10 is handed over to the first transfer device 22 later.
  • the first inverting device 34 is configured to invert the substrate 10 upside down after the second main surface 12 of the substrate 10 is etched and before the first main surface 11 of the substrate 10 is etched.
  • the layout and the number of the various devices constituting the first processing block 3 a are not limited to the example shown in FIG. 2 .
  • the second processing block 3 b has, for example, a first cleaning apparatus 35 , a second cleaning apparatus 36 , a first etching apparatus 37 , and a second etching apparatus 38 , as illustrated in FIG. 2 .
  • the first cleaning apparatus 35 is configured to clean the substrate 10 after the grinding of the first main surface 11 of the substrate 10 and wash away foreign substances attached to the substrate 10 with a brush or a sponge.
  • the second cleaning apparatus 36 is configured to clean the substrate 10 after the grinding of the second main surface 12 of the substrate 10 and wash away foreign substances attached to the substrate 10 with a brush or a sponge.
  • the first etching apparatus 37 is configured to etch the first main surface 11 of the substrate 10 after the grinding of the first main surface 11 , thus removing a damage layer formed by the grinding of the first main surface 11 or planarizing the first main surface 11 .
  • the second etching apparatus 38 is configured to etch the second main surface 12 of the substrate 10 after the grinding of the second main surface 12 , thus removing a damage layer formed by the grinding of the second main surface 12 or planarizing the second main surface 12 .
  • the layout and the number of the various apparatuses constituting the second processing block 3 b are not limited to the example shown in FIG. 2 .
  • the second processing station 5 includes a third processing block 5 a , a fourth processing block 5 b , and a third transfer block 5 c .
  • the third transfer block 5 c is disposed next to the third processing block 5 a and the fourth processing block 5 b , for example, on the negative Y-axis side of the third processing block 5 a and on the negative X-axis side of the fourth processing block 5 b . Further, the third transfer block 5 c and the third processing block 5 a may be one and the same block.
  • the third transfer block 5 c is disposed next to the second processing block 3 b of the first processing station 3 , for example, on the positive X-axis side of the second processing block 3 b.
  • a third transfer device 51 is disposed in the third transfer block 5 c .
  • the third transfer device 51 has a holder configured to hold the substrate 10 .
  • the holder is configured to be movable in the horizontal directions (both in the X-axis direction and the Y-axis direction) and in the vertical direction and pivotable around a vertical axis.
  • the third transfer device 51 is configured to transfer the substrate 10 to/from the third processing block 5 a , the fourth processing block 5 b , and the second processing block 3 b of the first processing station 3 .
  • the third processing block 5 a includes, for example, a first alignment device 52 , a second alignment device 53 , a second inverting device 54 , and a buffer device 55 , as shown in FIG. 2 .
  • the first alignment device 52 is configured to detect a center position of the first main surface 11 with a camera or the like in the state that the first main surface 11 of the substrate 10 faces upwards.
  • a center of the substrate 10 and a center of the substrate chuck can be aligned.
  • the second alignment device 53 is configured to detect a center position of the second main surface 12 with a camera or the like in the state that the second main surface 12 of the substrate 10 faces upwards.
  • the second inverting device 54 is configured to invert the substrate 10 upside down before the second main surface 12 of the substrate 10 is ground and after the first main surface 11 of the substrate 10 is ground.
  • the buffer device 55 is configured to store therein the substrate 10 after being cleaned by the first cleaning apparatus 35 and before being returned to the substrate processing apparatus 56 .
  • the substrate 10 may temporarily stand by in the buffer device 55 after the grinding of the first main surface 11 and before the grinding of the second main surface 12 , depending on a time difference between a plurality of processing times such as a grinding time and a cleaning time. Since the substrate 10 before being returned to the substrate processing apparatus 56 is temporarily stored, a fluctuation in a tact time of the substrate processing apparatus 56 can be absorbed, and an operating rate of the substrate processing apparatus 56 can be improved. In addition, since the substrate 10 is stored after it is cleaned, the buffer device 55 may be kept clean, as compared to a case where the substrate 10 before being cleaned is stored therein.
  • the buffer device 55 is provided at a portion of a transfer path of the substrate 10 which is transferred from the first cleaning apparatus 35 to the second alignment device 53 via the second inverting device 54 . That is, the buffer device 55 is provided on either a transfer path from the first cleaning apparatus 35 to the second inverting device 54 or a transfer path from the second inverting device 54 to the second alignment device 53 . In any case, even if misalignment of the substrate 10 occurs in the buffer device 55 , the second alignment device 53 detects the center of the second main surface 12 of the substrate 10 later, so that the center of the substrate 10 and the center of the substrate chuck can still be aligned.
  • the layout and the number of the various devices constituting the third processing block 5 a are not limited to the example shown in FIG. 2 .
  • the second inverting device 54 and the buffer device 55 may be disposed in the first processing block 3 a of the first processing station 3 .
  • the fourth processing block 5 b is equipped with, for example, the substrate processing apparatus 56 and a cleaning apparatus 57 , as illustrated in FIG. 1 .
  • the substrate processing apparatus 56 is configured to grind and planarize the substrate 10 .
  • the substrate processing apparatus 56 grinds both the first main surface 11 of the substrate 10 and the second main surface 12 of the substrate 10 . Details of the substrate processing apparatus 56 will be described later.
  • the cleaning apparatus 57 is configured to clean the bottom surface of the substrate 10 while holding the substrate 10 processed by the substrate processing apparatus 56 from above with the holder of the third transfer device 51 .
  • a transfer opening for the substrate 10 is provided at a boundary between the third processing block 5 a and the second transfer block 3 c , and this transfer opening is opened or closed by a shutter 41 .
  • the shutter 41 opens the transfer opening immediately before the second transfer device 31 enters the third processing block 5 a from the second transfer block 3 c , and closes the transfer opening immediately after the second transfer device 31 exits the third processing block 5 a into the second transfer block 3 c .
  • particles generated in the substrate processing apparatus 56 can be suppressed from reaching the second transfer block 3 c via the third transfer block 5 c and the third processing block 5 a , so that the second transfer block 3 c can be maintained clean.
  • a transfer opening for the substrate 10 is provided at a boundary between the third processing block 5 a and the third transfer block 5 c , and this transfer opening is opened or closed by a shutter 42 .
  • the shutter 42 opens the transfer opening immediately before the third transfer device 51 enters the third processing block 5 a from the third transfer block 5 c , and closes the transfer opening immediately after the third transfer device 51 exits the third processing block 5 a into the third transfer block 5 c .
  • particles generated in the substrate processing apparatus 56 can be suppressed from entering the third processing block 5 a via the third transfer block 5 c , so that the third processing block 5 a can be maintained clean.
  • a transfer opening for the substrate 10 is provided at a boundary between the second processing block 3 b and the third transfer block 5 c , and this transfer opening is opened or closed by a shutter 43 .
  • the shutter 43 opens the transfer opening immediately before the third transfer device 51 enters the second processing block 3 b from the third transfer block 5 c , and closes the transfer opening immediately after the third transfer device 51 exits the second processing block 3 b into the third transfer block 5 c . Therefore, particles generated in the substrate processing apparatus 56 can be suppressed from entering the second processing block 3 b via the third transfer block 5 c , so that the second processing block 3 b can be maintained clean.
  • the control device 9 is, for example, a computer, and includes a central processing unit (CPU) 91 and a recording medium 92 such as a memory, as illustrated in FIG. 1 .
  • the recording medium 92 stores therein a program for controlling various processings performed in the substrate processing system 1 .
  • the control device 9 controls an operation of the substrate processing system 1 by allowing the CPU 91 to execute the program stored in the recording medium 92 .
  • the control device 9 is equipped with an input interface 93 and an output interface 94 .
  • the control device 9 receives a signal from the outside through the input interface 93 and transmits a signal to the outside through the output interface 94 .
  • the program is stored in, for example, a computer-readable recording medium, and installed from this recording medium to the recording medium 92 of the control device 9 .
  • the computer-readable recording medium may be, by way of non-limiting example, a hard disk HD, a flexible disk FD, a compact disk CD, a magnet optical disk MO, or a memory card.
  • the program may be downloaded from a server through the Internet and installed in the recording medium 92 of the control device 9 .
  • the first transfer device 22 takes out the substrate 10 from the cassette C placed in the placing unit 21 (S 101 ). Then, the first transition device 32 receives the substrate 10 from the first transfer device 22 and hands it over to the second transfer device 31 . The second transfer device 31 transfers the substrate 10 from the first transition device 32 to the first alignment device 52 .
  • the first alignment device 52 detects the center position of the first main surface 11 with the camera or the like (S 102 ). Then, the third transfer device 51 transfers the substrate 10 from the first alignment device 52 to the substrate processing apparatus 56 .
  • the control device 9 controls the third transfer device 51 based on the detection result of the first alignment device 52 so that the center of the substrate 10 coincides with the center of the substrate chuck of the substrate processing apparatus 56 .
  • the substrate processing apparatus 56 grinds the first main surface 11 of the substrate 10 (S 103 ). Then, the third transfer device 51 transfers the substrate 10 from the substrate processing apparatus 56 to the first cleaning apparatus 35 . Further, the cleaning apparatus 57 may clean the bottom surface (second main surface 12 ) of the substrate 10 on the way. In the meanwhile, the top surface (first main surface 11 ) of the substrate 10 is held by the holder of the third transfer device 51 . Since the cleaning device 57 cleans the bottom surface of the substrate 10 during the transfer of the substrate 10 , it is possible to suppress grinding debris from being carried out of the fourth processing block 5 b.
  • the first cleaning apparatus 35 cleans the substrate 10 (S 104 ). Foreign substances attached to the substrate 10 are washed away with the brush, the sponge, or the like. Both the top and bottom surfaces of the substrate 10 may be scrub-cleaned. Then, the second transfer device 31 transfers the substrate 10 from the first cleaning apparatus 35 to the second inverting device 54 .
  • the second inverting device 54 inverts the substrate 10 upside down, allowing the second main surface 12 of the substrate 10 to face upwards (S 105 ). Then, the second transfer device 31 transfers the substrate 10 from the second inverting device 54 to the buffer device 55 .
  • the buffer device 55 temporarily stores therein the substrate 10 (S 106 ). Then, the second transfer device 31 transfers the substrate 10 from the buffer device 55 to the second alignment device 53 .
  • the vertical inversion (S 105 ) of the substrate 10 and the temporary storage (S 106 ) of the substrate 10 may be performed in the reverse order. In such a case, the second transfer device 31 transfers the substrate 10 from the first cleaning apparatus 35 to the buffer device 55 , then from the buffer device 55 to the second inverting device 54 , and then from the second inverting device 54 to the second alignment device 53 .
  • the temporary storage in the buffer device 55 (S 106 ) is performed after the grinding of the first main surface 11 (S 103 ) and before grinding of the second main surface 12 (S 108 ) in FIG. 4
  • the temporary storage in the buffer device (S 106 ) may not be performed depending on the operational status of the substrate processing apparatus 56 . That is, the substrate 10 may not pass through the buffer device 55 after the grinding of the first main surface 11 (S 103 ) and before the grinding of the second main surface 12 (S 108 ).
  • the second alignment device 53 detects the center position of the second main surface 12 with the camera or the like (S 107 ). Then, the third transfer device 51 transfers the substrate 10 from the second alignment device 53 to the substrate processing apparatus 56 .
  • the control device 9 controls the third transfer device 51 based on the detection result of the second alignment device 53 so that the center of the substrate 10 coincides with the center of the substrate chuck of the substrate processing apparatus 56 .
  • the substrate processing apparatus 56 grinds the second main surface 12 of the substrate 10 (S 108 ). Then, the third transfer device 51 transfers the substrate 10 from the substrate processing apparatus 56 to the second cleaning apparatus 36 . Further, the cleaning apparatus 57 may clean the bottom surface (first main surface 11 ) of the substrate 10 on the way. In the meanwhile, the top surface (second main surface 12 ) of the substrate 10 is held by the holder of the third transfer device 51 . Since the cleaning apparatus 57 cleans the bottom surface of the substrate 10 during the transfer of the substrate 10 , it is possible to suppress grinding debris from being carried out of the fourth processing block 5 b.
  • the second cleaning apparatus 36 cleans the substrate 10 (S 109 ). Foreign substances adhering to the substrate 10 are washed away with the brush, the sponge, or the like. Both the top and bottom surfaces of the substrate 10 may be scrub-cleaned. Thereafter, the second transfer device 31 transfers the substrate 10 from the second cleaning apparatus 36 to the second etching apparatus 38 .
  • the second etching apparatus 38 etches the second main surface 12 of the substrate 10 (S 110 ).
  • the second etching apparatus 38 discharges an etching liquid from above the substrate 10 being rotated, for example, and etches the second main surface 12 with the etching liquid.
  • a damage layer formed by the grinding of the second main surface 12 may be removed.
  • planarization may also be achieved.
  • the second transfer device 31 transfers the substrate 10 from the second etching apparatus 38 to the first inverting device 34 .
  • the first inverting device 34 inverts the substrate 10 upside down, allowing the first main surface 11 of the substrate 10 to face upwards (S 111 ). Thereafter, the second transfer device 31 transfers the substrate 10 from the first inverting device 34 to the first etching apparatus 37 .
  • the first etching apparatus 37 etches the first main surface 11 of the substrate 10 (S 112 ).
  • the first etching apparatus 37 discharges the etching liquid from above the substrate 10 being rotated, for example, and etches the first main surface 11 with the etching liquid.
  • a damage layer formed by the grinding of the first main surface 11 may be removed.
  • planarization may be achieved as well.
  • the second transfer device 31 transfers the substrate 10 from the first etching apparatus 37 to the second transition device 33 .
  • the first transfer device 22 receives the substrate 10 from the second transition device 33 and puts the substrate 10 in the cassette C placed in the placing unit 21 (S 113 ).
  • the substrate 10 is transferred to the outside while being accommodated in the cassette C.
  • both thickness nor flatness of the substrate 10 is uniform.
  • the thickness and the flatness are not uniform even within one substrate 10 , and not uniform between a plurality of substrates 10 as well.
  • both surfaces (the first main surface 11 and the second main surface 12 ) of the substrate 10 can be ground, the thickness and the flatness of the substrate 10 can be uniformed.
  • both surfaces of the substrate 10 are ground in one system 1 , products can be mass-produced in this single system 1 . Therefore, non-uniformity in quality between the products can be reduced, so that it becomes easy to manage the quality of the products. Further, since the cleaning and the etching of both surfaces as well as the grinding of both surfaces are performed in the single system 1 , it becomes easier to manage the quality of the products.
  • both surfaces of the substrate 10 are ground in the single system 1 , the whole system can be scaled down as compared to a case where one surface of the substrate is ground in one system and the other surface of the substrate is ground in another system. This is because the carry-in/out station 2 and the transfer paths of the substrate 10 are shared.
  • the whole system can be further reduced in size.
  • both the grinding of both surfaces of the substrate and the etching of both surfaces of the substrate are performed in the single system 1 , there are many processing conditions that can be corrected to maintain good product quality (for example, flatness).
  • good product quality for example, flatness
  • FIG. 5 is a plan view illustrating the substrate processing apparatus according to the exemplary embodiment.
  • the substrate processing apparatus 56 is configured to grind both the first main surface 11 of the substrate 10 and the second main surface 12 of the substrate 10 .
  • the substrate processing apparatus 56 has a rotary table 60 , a pair of first substrate chucks 61 A and 61 B, a pair of second substrate chucks 62 A and 62 B, a first processing unit 63 , and a second processing unit 67 .
  • the rotary table 60 is configured to be rotated about a vertical rotation axis R 1 .
  • the rotary table 60 holds thereon the first substrate chuck 61 A, the second substrate chuck 62 B, the first substrate chuck 61 B, and the second substrate chuck 62 A in this order at a regular distance therebetween around the rotation axis R 1 .
  • Each of the four substrate chucks 61 A, 61 B, 62 A and 62 B is held on the rotary table 60 so as to be rotated about a rotation axis R 2 , as shown in FIG. 6 .
  • the rotation axis R 1 of the rotary table 60 is an axis of revolution of the four substrate chucks 61 A, 61 B, 62 A and 62 B.
  • the pair of first substrate chucks 61 A and 61 B are symmetrically disposed with the rotation axis R 1 of the rotary table 60 therebetween. Each of these first substrate chucks 61 A and 61 B holds the substrate 10 from below with the first main surface 11 of the substrate 10 facing upwards.
  • the pair of second substrate chucks 62 A and 62 B are symmetrically disposed with the rotation axis R 1 of the rotary table 60 therebetween. Each of these second substrate chucks 62 A and 62 B holds the substrate 10 from below with the second main surface 12 of the substrate 10 facing upwards.
  • the first processing unit 63 has a first operating unit 65 to which a first processing tool 64 is mounted.
  • the first processing tool 64 is configured to process the first main surface 11 of the substrate 10 held by the first substrate chuck 61 A ( 61 B).
  • the first processing tool 64 is mounted to the first operating unit 65 in a replaceable manner.
  • a first elevating unit 66 is configured to elevate the first operating unit 65 up and down.
  • the first processing tool 64 thins the substrate 10 , for example.
  • the first processing tool 64 includes an annular plate-shaped grinding wheel 641 and a plurality of whetstones 642 fixed to a bottom surface of the grinding wheel 641 .
  • the plurality of whetstones 642 are arranged in a ring shape along an edge of the bottom surface of the grinding wheel 641 .
  • the whetstones 642 are arranged on a same horizontal plane H.
  • a trajectory OB of the plurality of whetstones 642 arranged in the ring shape is set to pass through a center 13 of the top surface (for example, the first main surface 11 ) of the substrate 10 .
  • the first operating unit 65 is equipped with a rotary plate 651 to which the first processing tool 64 is mounted in the replaceable manner, a spindle shaft 652 whose lower end is connected to the rotary plate 651 , a shaft bearing 653 supporting the spindle shaft 652 in a rotatable manner, and a spindle motor 654 configured to rotate the spindle shaft 652 , as shown in FIG. 6 , for example.
  • the spindle motor 654 rotates the spindle shaft 652 , thus allowing the rotary plate 651 and the processing tool 64 to be rotated.
  • the first processing unit 63 is equipped with the first elevating unit 66 configured to elevate the first operating unit 65 up and down.
  • the first elevating unit 66 has a vertical guide 661 , a slider 662 configured to be moved along the guide 661 , and a motor 663 configured to move the slider 662 .
  • a holder 664 is fixed to the slider 662 , and the holder 664 holds the first operating unit 65 .
  • the first operating unit 65 and the first processing tool 64 are moved up and down along with the slider 662 .
  • the first elevating unit 66 lowers the first operating unit 65 and the first processing tool 64 .
  • the first processing tool 64 is lowered while being rotated, comes into contact with the top surface of the substrate 10 being rotated, and grinds the entire top surface of the substrate 10 .
  • the second processing unit 67 has a second operating unit 69 and a second elevating unit 70 , as shown in FIG. 5 .
  • the second operating unit 69 is equipped with a non-illustrated second processing tool. Since the second processing tool has the same configuration as the first processing tool 64 except that it is configured to process the second main surface 12 of the substrate 10 held by the second substrate chuck 62 A ( 62 B), illustration of the second processing tool is omitted.
  • the second elevating unit 70 is configured to elevate the second operating unit 69 up and down.
  • the second operating unit 69 has the same configuration as the first operating unit 65
  • the second elevating unit 70 has the same configuration as the first elevating unit 66 .
  • the substrate processing apparatus 56 is equipped with the rotary table 60 , the pair of first substrate chucks 61 A and 61 B, the pair of second substrate chucks 62 A and 62 B, the first processing unit 63 , and the second processing unit 67 .
  • the first processing unit 63 processes the first main surface 11 of the substrate 10 held by the first substrate chuck 61 A ( 61 B)
  • the second processing unit 67 processes the second main surface 12 of the substrate 10 held by the second substrate chuck 62 A ( 62 B). Accordingly, both the processing of the first main surface 11 and the processing of the second main surface 12 can be performed on the single rotary table 60 .
  • both surfaces of the substrate 10 are ground by the single apparatus, the number of apparatuses required may be reduced as compared to a case where one surface of the substrate is ground by one apparatus and the other surface of the substrate is processed by another. Therefore, the entire system can be scaled down.
  • the substrate processing apparatus 56 has a pair of first tilt angle adjusting units 71 A and 71 B configured to independently adjust tilt angles of the rotation axes R 2 of the pair of first substrate chucks 61 A and 61 B, respectively.
  • One of these first tilt angle adjusting unit 71 A is configured to adjust the tilt angle of the rotation axis R 2 of the one first substrate chuck 61 A.
  • the other of the first tilt angle adjusting units 71 B is configured to adjust the tilt angle of the other first substrate chuck 61 B.
  • the tilt angle refers to a tilt angle with respect to a vertical line of the rotation axis R 2 .
  • the tilt angle is represented by, for example, an angle formed by the rotation axis R 2 and the Z axis when viewed from the X-axis direction and an angle formed by the rotation axis R 2 and the Z axis when viewed from the Y-axis direction.
  • first tilt angle adjusting units 71 A and 71 B are the same, only one first tilt angle adjusting unit 71 A will be described while omitting description of the other first tilt angle adjusting unit 71 B. Further, only one first substrate chuck 61 A will be described, and description of the other first substrate chuck 61 B will be omitted.
  • the first tilt angle adjusting unit 71 A includes a support 711 configured to support the first substrate chuck 61 A rotatably.
  • a motor configured to rotate the first substrate chuck 61 A about the rotation axis R 2 is embedded in the support 711 .
  • the support 711 is provided with a flange 712 .
  • the first tilt angle adjusting unit 71 A includes three connection members 713 , 714 and 715 arranged at a regular distance therebetween (e.g., at an angular interval of 120° degrees) in a circumferential direction of the flange 712 .
  • the three connection members 713 , 714 and 715 connect the flange 712 and the rotary table 60 .
  • connection members 713 and 714 are provided so that heights H 1 and H 2 of the flange 712 with respect to the rotary table 60 are adjustable.
  • the other connection member 715 is provided so that the height of the flange 712 with respect to the rotary table 60 is not adjustable.
  • Each of the two connection members 713 and 714 has, for example, a motor 716 and a motion converting mechanism 717 configured to convert a rotational motion of the motor 716 into a linear motion of the flange 712 .
  • the motion converting mechanism 717 includes, for example, a ball screw.
  • the first tilt angle adjusting unit 71 A adjusts the tilt angle of the rotation axis R 2 by changing the two heights H 1 and H 2 .
  • the tilt angle of the rotation axis R 2 is represented by the two heights H 1 and H 2 .
  • the other connection member 715 is provided so that the height of the flange 712 with respect to the rotary table 60 is not adjustable in the present exemplary embodiment, it may be installed so that the height of the flange 712 is adjustable.
  • the first substrate chuck 61 A has a substrate holding surface 611 for holding the substrate 10 thereon.
  • the substrate holding surface 611 holds the substrate 10 from below.
  • the substrate 10 has a shape concentric with the substrate holding surface 611 , and is attracted to the substrate holding surface 611 .
  • the entire bottom surface (for example, the second main surface 12 ) of the substrate 10 is attracted to the substrate holding surface 611 so that an intersection point between the substrate holding surface 611 and the rotation axis R 2 coincides with the center of the substrate 10 .
  • the substrate holding surface 611 of the first substrate chuck 61 A is a conical surface symmetrical about the rotation axis R 2 of the first substrate chuck 61 A, as illustrated in FIG. 6 and FIG. 8 .
  • the top surface (for example, the first main surface 11 ) of the substrate 10 also becomes a conical surface, conforming to the substrate holding surface 611 .
  • a distribution of a contact pressure between the whetstones 642 and the substrate 10 on the trajectory OB of the whetstones 642 shown in FIG. 7 is changed.
  • the substrate 10 is thinned at a position where the contact pressure is high. Accordingly, a plate thickness distribution of the substrate 10 in a diametrical direction thereof can be adjusted by adjusting the tilt angle of the rotation axis R 2 .
  • the substrate holding surface 611 of the first substrate chuck 61 A is ground to have the conical shape by the first processing unit 63 in the state that it is not holding the substrate 10 .
  • the tilt angle of the rotation axis R 2 when the substrate holding surface 611 of the first substrate chuck 61 A is ground into the conical shape becomes a reference value of the tilt angle of the rotation axis R 2 when grinding the first main surface 11 of the substrate 10 .
  • the tilt angle of the rotation axis R 2 equals to the reference value during the grinding of the first main surface 11 , the plate thickness distribution of the substrate 10 in the diametrical direction becomes uniform after the grinding of the first main surface 11 .
  • the plate thickness distribution becomes uniform in the single substrate 10 , and between the plurality of substrates 10 as well.
  • the substrate holding surfaces 611 and 611 of the pair of first substrate chucks 61 A and 61 B into the conical shape are ground into the conical shape in the state that they are tilted equally. Therefore, between the substrate 10 held by one first substrate chuck 61 A and the substrate 10 held by the other first substrate chuck 61 B, the plate thickness distribution after the grinding becomes uniform.
  • the substrate processing apparatus 56 has a pair of second tilt angle adjusting units 72 A and 72 B configured to independently adjust tilt angles of the rotation axes R 2 of the pair of second substrate chucks 62 A and 62 B, respectively.
  • One of these second tilt angle adjusting units 72 A is configured to adjust the tilt angle of the rotation axis R 2 of one second substrate chuck 62 A.
  • the other of the second tilt angle adjusting units 72 B is configured to adjust the tilt angle of the other second substrate chuck 62 B.
  • second tilt angle adjusting units 72 A and 72 B are the same as the first tilt angle adjusting unit 71 A, description thereof will be omitted. Further, since the second substrate chucks 62 A and 62 B are the same as the first substrate chuck 61 A except that they have substrate holding surfaces ground into the conical shape by the second processing unit 67 instead of the first processing unit 63 , description thereof will also be omitted here.
  • the substrate processing apparatus 56 has the first tilt angle adjusting units 71 A and 71 B and the second tilt angle adjusting units 72 A and 72 B, and adjusts the tilt angles of the rotation axes R 2 of the first substrate chucks 61 A and 61 B and the second substrate chucks 62 A and 62 B independently.
  • the reason why the adjustment of the tilt angle of the rotation axis R 2 is performed for each substrate chuck 61 is that a mounting error of each substrate chuck 61 to the rotary table 60 may be different.
  • the first substrate chuck 61 A ( 61 B) holds the substrate 10 ground by the first processing unit 63 and does not hold the substrate 10 ground by the second processing unit 67 .
  • the second substrate chuck 62 A ( 62 B) holds the substrate 10 ground by the second processing unit 67 and does not hold the substrate 10 ground by the first processing unit 63 .
  • the rotation axis R 3 of the spindle shaft 652 of the first processing unit 63 and the rotation axis of the spindle shaft of the second processing unit 67 are both arranged vertically, they may be slightly inclined due to the mounting error or the like. In addition, the mounting error may be different between the first processing unit 63 and the second processing unit 67 .
  • the first substrate chuck 61 A ( 61 B) includes the substrate holding surface 611 ground by the first processing unit 63 , not the second processing unit 67 , as described above.
  • the first substrate chuck 61 A ( 61 B) and the substrate 10 held by the first substrate chuck 61 A ( 61 B) are ground with the same first processing unit 63 . Therefore, when the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A ( 61 B) equals to the aforementioned reference value, the plate thickness distribution of the substrate 10 in the diametrical direction thereof is highly likely to be uniform after the grinding by the first processing unit 63 . The plate thickness distribution becomes uniform in the single substrate 10 and between the plurality of substrates 10 as well.
  • the plate thickness distribution after the grinding becomes uniform.
  • the plate thickness distribution becomes non-uniform due to the wear of the first processing tool 64 or the like, it is easy to correct the tilt angle since it is originally uniform.
  • the second substrate chuck 62 A ( 62 B) includes the substrate holding surface ground by the second processing unit 67 , not the first processing unit 63 , as mentioned above.
  • the second substrate chuck 62 A ( 62 B) and the substrate 10 held by the second substrate chuck 62 A ( 62 B) are ground with the same second processing unit 67 . Therefore, when the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A ( 62 B) equals to the reference value, the plate thickness distribution of the substrate 10 in the diametrical direction thereof is highly likely to be uniform after the grinding by the second processing unit 67 .
  • the plate thickness distribution is uniform in the single substrate 10 and between the plurality of substrates 10 as well.
  • the plate thickness distribution after the grinding becomes uniform.
  • the plate thickness distribution becomes non-uniform due to the wear of the second processing tool or the like, it is easy to correct the tilt angle since it is originally uniform.
  • the substrate processing apparatus 56 has a first plate thickness distribution measuring unit 75 A configured to measure the plate thickness of the substrate 10 ground by the first processing unit 63 at multiple points of the substrate 10 in the diametrical direction thereof.
  • the first plate thickness distribution measuring unit 75 A includes a first plate thickness detector 751 A, such as a non-contact type laser sensor, which is configured to detect the plate thickness of the substrate 10 ground by the first processing unit 63 .
  • the first plate thickness detector 751 A detects the plate thickness of the substrate 10 based on a phase difference between light reflected from the top surface of the substrate 10 and light reflected from the bottom surface of the substrate 10 .
  • the first plate thickness distribution measuring unit 75 A includes a first revolving arm 752 A, and the first revolving arm 752 A is configured to be revolved about a base end thereof and hold the first plate thickness detector 751 A at a leading end thereof.
  • the plate thickness can be measured at the multiple points of the substrate 10 in the diametrical direction thereof.
  • the first revolving arm 752 A may hold thereon a multiple number of first plate thickness detectors 751 A at a certain distance therebetween in a lengthwise direction thereof.
  • the first plate thickness distribution measuring unit 75 A may include a slider configured to be moved along a guide rail instead of the first revolving arm 752 A, and this slider may hold the first plate thickness detector 751 A.
  • the substrate processing apparatus 56 is equipped with a second plate thickness distribution measuring unit 75 B configured to measure the plate thickness of the substrate 10 ground by the second processing unit 67 at multiple points of the substrate 10 in the diametrical direction thereof. Since the second plate thickness distribution measuring unit 75 B is the same as the first plate thickness distribution measuring unit 75 A, description thereof will be omitted here.
  • the control device 9 includes a first tilt angle correcting unit 95 configured to correct the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A ( 61 B) based on the plate thickness distribution of the substrate 10 in the diametrical direction which has been measured by the first plate thickness distribution measuring unit 75 A. Since the first tilt angle correcting unit 95 corrects the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A ( 61 B) based on the plate thickness distribution of the substrate 10 processed by the first processing unit 63 , plate thickness distributions after the current processing can be uniformed. In addition, if the plate thickness distribution measured by the first plate thickness distribution measuring unit 75 A falls within a tolerance range, the correction of the tilt angle is not performed.
  • the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A is corrected based on the plate thickness distribution of the substrate 10 , which is held by the first substrate chuck 61 A and has been processed by the first processing unit 63 , in the diametrical direction thereof so that the plate thickness distribution after the current processing becomes uniform.
  • the tilt angle of the rotation axis R 2 of the first substrate chuck 61 B is corrected based on the plate thickness distribution of the substrate 10 , which is held by the first substrate chuck 61 B and has been processed by the first processing unit 63 , in the diametrical direction so that the plate thickness distribution after the current processing becomes uniform.
  • control device 9 includes a second tilt angle correcting unit 96 configured to correct the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A ( 62 B) based on the plate thickness distribution of the substrate 10 in the diametrical direction which has been measured by the second plate thickness distribution measuring unit 75 B.
  • the second tilt angle correcting unit 96 corrects the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A ( 62 B) based on the plate thickness distribution of the substrate 10 processed by the second processing unit 67 , so that the plate thickness distribution after the current processing becomes uniform. If the plate thickness distribution measured by the second plate thickness distribution measuring unit 75 B falls within a tolerance range, the correction of the tilt angle is not performed.
  • the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A is corrected based on the plate thickness distribution of the substrate 10 , which is held by the second substrate chuck 62 A and has been processed by the second processing unit 67 , in the diametrical direction thereof so that the plate thickness distribution thereof becomes uniform after the current processing.
  • the tilt angle of the rotation axis R 2 of the second substrate chuck 62 B is corrected based on the plate thickness distribution of the substrate 10 , which is held by the second substrate chuck 62 B and has been processed by the second processing unit 67 , in the diametrical direction thereof so that the plate thickness distribution thereof becomes uniform after the current processing.
  • the substrate processing apparatus 56 is equipped with a first substrate cleaning unit 76 A configured to clean the substrate 10 ground by the first processing unit 63 . Since a contaminant of the substrate 10 can be removed before the plate thickness of the substrate 10 is measured by the first plate thickness distribution measuring unit 75 A, measurement accuracy of the first plate thickness distribution measuring unit 75 A may be improved. Furthermore, the grinding debris can be suppressed from being taken out of the substrate processing apparatus 56 along with the substrate 10 .
  • the first substrate cleaning unit 76 A has a nozzle configured to discharge a cleaning liquid. The nozzle discharges the cleaning liquid from an outside of the substrate 10 in the diametrical direction toward an inner side of the substrate 10 in the diametrical direction.
  • DIW Deionized Water
  • the nozzle may be a dual-fluid nozzle configured to mix the cleaning liquid with a gas and discharge the mixture.
  • the substrate processing apparatus 56 is equipped with a second substrate cleaning unit 76 B configured to clean the substrate 10 ground by the second processing unit 67 . Since a contaminant of the substrate 10 can be removed before the plate thickness of the substrate 10 is measured by the second plate thickness distribution measuring unit 75 B, measurement accuracy of the second plate thickness distribution measuring unit 75 B may be improved. Further, the grinding debris can be suppressed from being taken out of the substrate processing apparatus 56 along with the substrate 10 . Since the second substrate cleaning unit 76 B is the same as the first substrate cleaning unit 76 A, description thereof will be omitted.
  • the substrate processing apparatus 56 has a first substrate chuck cleaning unit 77 A configured to clean the first substrate chuck 61 A ( 61 B) after the substrate 10 ground by the first processing unit 63 is taken out.
  • the first substrate chuck cleaning unit 77 A cleans the substrate holding surface 611 of the first substrate chuck 61 A ( 61 B).
  • the first substrate chuck cleaning unit 77 A includes a disk brush (not shown) configured to rub the substrate holding surface 611 to wash it; and a non-illustrated driving unit configured to move the disk brush.
  • a roll brush, a sponge, or the like may be used instead of the disk brush.
  • the substrate processing apparatus 56 has a second substrate chuck cleaning unit 77 B configured to clean the second substrate chuck 62 A ( 62 B) after the substrate 10 ground by the second processing unit 67 is taken out.
  • the grinding debris can be suppressed from being swept in. Since the second substrate chuck cleaning unit 77 B is the same as the first substrate chuck cleaning unit 77 A, description thereof will be omitted.
  • a first position A 1 , a second position A 2 , a third position A 3 , and a fourth position A 4 are set around the rotation axis R 1 of the rotary table 60 in this order.
  • the pair of first substrate chucks 61 A and 61 B are positioned at the first position A 1 and the third position A 3 alternately.
  • the pair of second substrate chucks 62 A and 62 B are positioned at the second position A 2 and the fourth position A 4 alternately.
  • the substrate 10 is first transferred from the third transfer device 51 onto the first substrate chuck 61 A at, for example, the first position A 1 shown in FIG. 9 A , and is held on the first substrate chuck 61 A with the first main surface 11 of the substrate 10 facing upwards. Then, the rotary table 60 is rotated from a state shown in FIG. 9 A into a state shown in FIG. 9 B , and the substrate 10 is moved from the first position A 1 to the third position A 3 together with the first substrate chuck 61 A.
  • the substrate 10 is processed by the first processing unit 63 at the third position A 3 .
  • the first main surface 11 which is the top surface of the substrate 10 , is processed.
  • the rotary table 60 is rotated from the state shown in FIG. 9 B into the state shown in FIG. 9 A , and the substrate 10 is moved from the third position A 3 to the first position A 1 together with the first substrate chuck 61 A.
  • the substrate 10 is transferred from the first substrate chuck 61 A to the third transfer device 51 at the first position A 1 , and is taken out of the substrate processing apparatus 56 . Subsequently, the substrate 10 is inverted upside down at the outside of the substrate processing apparatus 56 , and is brought back into the substrate processing apparatus 56 by the third transfer device 51 .
  • the substrate 10 is delivered from the third transfer device 51 onto the second substrate chuck 62 A at, for example, the fourth position A 4 shown in FIG. 9 A , and is held on the second substrate chuck 62 A with the second main surface 12 of the substrate 10 facing upwards.
  • the rotary table 60 is rotated from the state shown in FIG. 9 A into the state shown in FIG. 9 B , and the substrate 10 is moved from the fourth position A 4 to the second position A 2 together with the second substrate chuck 62 A.
  • the substrate 10 is processed by the second processing unit 67 at the second position A 2 .
  • the second main surface 12 which is the top surface of the substrate 10 , is processed.
  • the rotary table 60 is rotated from the state shown in FIG. 9 B into the state shown in FIG. 9 A , and the substrate 10 is moved from the second position A 2 to the fourth position A 4 together with the second substrate chuck 62 A.
  • the substrate 10 is transferred from the second substrate chuck 62 A to the third transfer device 51 at the fourth position A 4 , and is taken out of the substrate processing apparatus 56 .
  • the carry-in/carry-out of the substrate 10 by the third transfer device 51 is performed, and, also, the attachment/detachment of the substrate 10 to/from the first substrate chuck 61 A ( 61 B) is performed.
  • the cleaning of the substrate 10 by the first substrate cleaning unit 76 A, the measurement of the plate thickness of the substrate 10 by the first plate thickness distribution measuring unit 75 A, and the correction of the tilt angle by the first tilt angle correcting unit 95 are performed.
  • the cleaning of the first substrate chuck 61 A ( 61 B) by the first substrate chuck cleaning unit 77 A is also performed.
  • the order of these processings is not limited to the example shown in FIG. 10 .
  • the correction of the tilt angle may be performed after the plate thickness of the substrate 10 is measured or after substrate 10 is carried out. In the latter case, the correction of the tilt angle may be performed during the rotation of the rotary table 60 from the first position A 1 to the third position A 3 after a new substrate 10 is carried in, for example. Further, the correction of the tilt angle may be performed at the third position A 3 as will be described later. However, if the plate thickness distribution measured by the first plate thickness distribution measuring unit 75 A falls within the tolerance range, the correction of the tilt angle is not performed.
  • the grinding of the second main surface 12 of the substrate 10 by the second processing unit 67 is performed.
  • the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A ( 62 B) is performed at the fourth position A 4 in FIG. 10 , it may be performed at the second position A 2 . In the latter case, the correction of the tilt angle of the rotation axis R 2 is performed before the grinding of the second main surface 12 .
  • the grinding of the first main surface 11 of the substrate 10 by the first processing unit 63 is performed. Further, although the correction of the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A ( 61 B) is performed at the first position A 1 in FIG. 10 , it may be performed at the third position A 3 . In the latter case, the correction of the tilt angle of the rotation axis R 2 is performed before the grinding of the first main surface 11 .
  • the carry-in/carry-out of the substrate 10 by the third transfer device 51 is performed, and, also, the attachment/detachment of the substrate 10 to/from the second substrate chuck 62 A ( 62 B) are performed.
  • the cleaning of the substrate 10 by the second substrate cleaning unit 76 B, the measurement of the plate thickness of the substrate 10 by the second plate thickness distribution measuring unit 75 B, and the correction of the tilt angle by the second tilt angle correcting unit 96 are performed.
  • the cleaning of the second substrate chuck 62 A ( 62 B) by the second substrate chuck cleaning unit 77 B is also performed. The order of these processings is not limited to the example shown in FIG. 10 .
  • the correction of the tilt angle may be performed after the plate thickness of the substrate 10 is measured or after the substrate 10 is carried out. In the latter case, the correction of the tilt angle may be performed during the rotation of the rotary table 60 from the fourth position A 4 to the second position A 2 after the new substrate 10 is carried in, for example. Further, the correction of the tilt angle may be performed at the second position A 2 , as stated above. However, if the plate thickness distribution measured by the second plate thickness distribution measuring unit 75 B falls within the tolerance range, the correction of the tilt angle is not performed.
  • processings performed by using the first substrate chuck 61 A in a range from a time t 1 to time t 2 of FIG. 10 will be mainly described with reference to FIG. 11 .
  • the rotary table 60 is in the state shown in FIG. 9 A .
  • the processings shown in FIG. 11 are performed under the control of the control device 9 .
  • processings performed by using the first substrate chuck 61 B and processings performed by using the second substrate chucks 62 A and 62 B are the same as those described in FIG. 11 , illustration thereof will be omitted here.
  • the third transfer device 51 carries in the substrate 10 (S 201 ), and the first substrate chuck 61 A receives the substrate 10 .
  • the grinding of the second main surface 12 of the substrate 10 held by the second substrate chuck 62 B is performed at the second position A 2 , as shown in FIG. 10 .
  • the grinding of the first main surface 11 of the substrate 10 held by the first substrate chuck 61 B is performed.
  • a new substrate 10 is carried in.
  • the rotary table 60 is rotated by 180° from the state of FIG. 9 A , as indicated by an arrow in FIG. 9 A (S 202 ). As a result, the rotary table 60 comes into the state of FIG. 9 B .
  • the first substrate chuck 61 A is moved from the first position A 1 to the third position A 3
  • the first substrate chuck 61 B is moved from the third position A 3 to the first position A 1 .
  • the second substrate chuck 62 A is moved from the fourth position A 4 to the second position A 2
  • the second substrate chuck 62 B is moved from the second position A 2 to the fourth position A 4 .
  • the first processing unit 63 grinds the first main surface 11 of the substrate 10 held by the first substrate chuck 61 A (S 203 ). This grinding is performed at the third position A 3 .
  • the cleaning of the substrate 10 the measurement of the plate thickness of the substrate 10 , the correction of the tilt angle of the rotation axis R 2 of the first substrate chuck 61 B, the carry-out of the substrate 10 , the cleaning of the first substrate chuck 61 B, and the carry-in of the new substrate 10 are performed at the first position A 1 , as illustrated in FIG. 10 .
  • the grinding of the second main surface 12 of the substrate 10 held by the second substrate chuck 62 A is performed.
  • the cleaning of the substrate 10 the measurement of the plate thickness of the substrate 10 , the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 B, the carry-out of the substrate 10 , the cleaning of the second substrate chuck 62 B, and the carry-in of the new substrate 10 are performed.
  • the rotary table 60 is rotated by 180° from the state of FIG. 9 B , as indicated by an arrow shown in FIG. 9 B (S 204 ). As a result, the rotary table 60 comes into the state of FIG. 9 A .
  • the first substrate chuck 61 A is moved from the third position A 3 to the first position A 1
  • the first substrate chuck 61 B is moved from the first position A 1 to the third position A 3 .
  • the second substrate chuck 62 A is moved from the second position A 2 to the fourth position A 4
  • the second substrate chuck 62 B is moved from the fourth position A 4 to the second position A 2 .
  • the first substrate cleaning unit 76 A cleans the substrate 10 held by the first substrate chuck 61 A (S 205 ), and the first plate thickness distribution measuring unit 75 A measures the plate thickness of the substrate 10 (S 206 ). Then, the first tilt angle correcting unit 95 corrects the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A (S 207 ). Further, the third transfer device 51 receives the substrate 10 from the first substrate chuck 61 A and carries it out (S 208 ), and the first substrate chuck cleaning unit 77 A cleans the first substrate chuck 61 A (S 209 ). Thereafter, the processings starting from the process S 201 shown in FIG. 11 are performed again.
  • the grinding of the second main surface 12 of the substrate 10 held by the second substrate chuck 62 B is performed.
  • the grinding of the first main surface 11 of the substrate 10 held by the first substrate chuck 61 B is performed.
  • the cleaning of the substrate 10 is performed.
  • the measurement of the plate thickness of the substrate 10 is performed.
  • the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A, the carry-out of the substrate 10 , the cleaning of the second substrate chuck 62 A, and the carry-in of the new substrate 10 is performed.
  • FIG. 12 is a plan view illustrating a substrate processing apparatus according to a modification example.
  • the substrate processing apparatus 56 of the present modification example the substrate processing apparatus 56 of the above-described exemplary embodiment.
  • the substrate chucks 61 A, 61 B, 62 A and 62 B are respectively moved to the first position A 1 , the second position A 2 , the third position A 3 and the fourth position A 4 in this order, and are returned to the first position A 1 from the fourth position A 4 , as illustrated in FIG. 13 A to FIG. 13 D .
  • all the substrate chucks 61 A, 61 B, 62 A and 62 B pass through the same positions in the same order. Therefore, the plate thicknesses of the substrates 10 held by all the substrate chucks 61 A, 61 B, 62 A and 62 B can be measured at a specific position, for example, at the fourth position A 4 . Thus, the number of the plate thickness distribution measuring unit 75 can be reduced. Further, the substrates 10 held by all the substrate chucks 61 A, 61 B, 62 A and 62 B can be cleaned at a certain position, for example, at the fourth position, so that the number of the substrate cleaning unit 76 can be reduced. Moreover, all the substrate chucks 61 A, 61 B, 62 A, and 62 B can be cleaned at a specific position, for example, at the first position A 1 , so that the number of the substrate chuck cleaning unit 77 can be reduced.
  • the substrate 10 is first transferred from the third transfer device 51 onto the first substrate chuck 61 A at the first position A 1 shown in FIG. 13 A , for example, and is held on the first substrate chuck 61 A with the first main surface 11 of the substrate 10 facing upwards. Thereafter, the rotary table 60 is rotated from a state shown in FIG. 13 A into a state shown in FIG. 13 C through a state shown in FIG. 13 B , and the substrate 10 is moved from the first position A 1 to the third position A 3 together with the first substrate chuck 61 A.
  • the substrate 10 is processed by the first processing unit 63 at the third position A 3 .
  • the first main surface 11 which is the top surface of the substrate 10 , is processed.
  • the rotary table 60 is rotated from the state shown in FIG. 13 C into the state shown in FIG. 13 A through a state shown in FIG. 13 D , and the substrate 10 is moved from the third position A 3 to the first position A 1 together with the first substrate chuck 61 A.
  • the substrate 10 is transferred from the first substrate chuck 61 A to the third transfer device 51 at the first position A 1 , and is taken out of the substrate processing apparatus 56 . Subsequently, the substrate 10 is inverted upside down at the outside of the substrate processing apparatus 56 and brought back into the substrate processing apparatus 56 by the third transfer device 51 .
  • the substrate 10 is transferred from the third transfer device 51 onto the second substrate chuck 62 A at the first position A 1 shown in FIG. 13 B , for example, and is held on the second substrate chuck 62 A with the second main surface 12 of the substrate 10 facing upwards.
  • the rotary table 60 is rotated from the state shown in FIG. 13 B into the state shown in FIG. 13 C , and the substrate 10 is moved from the first position A 1 to the second position A 2 together with the second substrate chuck 62 A.
  • the substrate 10 is processed by the second processing unit 67 at the second position A 2 .
  • the second main surface 12 which is the top surface of the substrate 10 , is processed.
  • the rotary table 60 is rotated from the state shown in FIG. 13 C into the state shown in FIG. 13 B through the state shown in FIG. 13 D and the state shown in FIG. 13 A , and the substrate 10 is moved from the second position A 2 to the first position A 1 together with the second substrate chuck 62 A.
  • the substrate 10 is transferred from the second substrate chuck 62 A to the third transfer device 51 at the first position A 1 , and is taken out of the substrate processing apparatus 56 .
  • processings performed at the first position A 1 , the second position A 2 , the third position A 3 and the fourth position A 4 will be described with reference to FIG. 14 .
  • the carry-in/carry-out of the substrate 10 by the third transfer device 51 is performed, and, also, the attachment/detachment of the substrate 10 to/from the substrate chucks 61 A, 61 B, 62 A and 62 B is performed.
  • the cleaning of the substrate chucks 61 A, 61 B, 62 A and 62 B by the substrate chuck cleaning unit 77 is performed.
  • the grinding of the second main surface 12 of the substrate 10 by the second processing unit 67 is performed.
  • the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A ( 62 B) is performed at the fourth position A 4 in FIG. 14 , it may be performed at the second position A 2 . In the latter case, the correction of the tilt angle of the rotation axis R 2 is performed before the grinding of the second main surface 12 .
  • the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A ( 62 B) may be performed during the rotation of the rotary table 60 from the first position A 1 to the second position A 2 after a new substrate 10 is carried in, for example.
  • the grinding of the first main surface 11 of the substrate 10 by the first processing unit 63 is performed.
  • the correction of the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A ( 61 B) is performed at the fourth position A 4 in FIG. 14 , it may be performed at the third position A 3 . In the latter case, the correction of the tilt angle of the rotation axis R 2 may be performed before the grinding of the first main surface 11 .
  • the correction of the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A and 61 B may be performed during the rotation of the rotary table 60 from the first position A 1 to the third position A 3 after the new substrate 10 is carried in, for example.
  • the attachment/detachment of the substrate and the processing of the substrate are not performed.
  • the cleaning of the substrate 10 by the substrate cleaning unit 76 , the measurement of the plate thickness of the substrate 10 by the plate thickness distribution measuring unit 75 , and the correction of the tilt angles by the first tilt angle correcting unit 95 and the second tilt angle correcting unit 96 are carried out.
  • the correction of the tilt angle may be performed after the plate thickness of the substrate 10 is measured, and may be performed at the first position A 1 , the second position A 2 , or the third position A 3 as stated above. However, if the plate thickness distribution measured by the plate thickness distribution measuring unit 75 falls within the tolerance range, the correction of the tilt angle is not performed.
  • processings performed by using the first substrate chuck 61 A in the range from the time t 1 to the time t 2 of FIG. 14 will be mainly described with reference to FIG. 15 .
  • the rotary table 60 is in the state of FIG. 13 A .
  • the processings shown in FIG. 15 are performed under the control of the control device 9 .
  • processings performed at the first substrate chuck 61 B and processings performed at the second substrate chucks 62 A and 62 B are the same as those shown in FIG. 15 , and, thus, illustration thereof will be omitted.
  • the third transfer device 51 carries in the substrate 10 (S 301 ), and the first substrate chuck 61 A receives the substrate 10 .
  • the grinding of the second main surface 12 of the substrate 10 held by the second substrate chuck 62 B is performed at the second position A 2 , as shown in FIG. 14 .
  • the grinding of the first main surface 11 of the substrate 10 held by the first substrate chuck 61 B is performed.
  • the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A is performed.
  • the rotary table 60 is rotated by 90° from the state of FIG. 13 A , as indicated by an arrow in FIG. 13 A (S 302 ).
  • the rotary table 60 comes into the state of FIG. 13 B .
  • the first substrate chuck 61 A is moved from the first position A 1 to the second position A 2 ;
  • the second substrate chuck 62 B is moved from the second position A 2 to the third position A 3 ;
  • the first substrate chuck 61 B is moved from the third position A 3 to the fourth position A 4 ;
  • the second substrate chuck 62 A is moved from fourth position A 4 to the first position A 1 .
  • the first substrate chuck 61 A stands by at the second position A 2 (S 303 ).
  • the second position A 2 since the top surface of the substrate 10 is the first main surface 11 , the grinding of the second main surface 12 of the substrate 10 is not performed.
  • the third position A 3 since the top surface of the substrate 10 is the second main surface 12 , the grinding of the first main surface 11 of the substrate 10 is not performed.
  • the first position A 1 the carry-out of the substrate 10 , the cleaning of the second substrate chuck 62 A, and the carry-in of the new substrate 10 are performed, as shown in FIG. 14 .
  • the fourth position A 4 the cleaning of the substrate 10 , the measurement of the plate thickness of the substrate 10 , and the correction of the tilt angle of the rotation axis R 2 of the first substrate chuck 61 B are performed.
  • the rotary table 60 is rotated by 90° from the state of FIG. 13 B , as indicated by an arrow in FIG. 13 B (S 304 ). As a result, the rotary table 60 comes into the state of FIG. 13 C .
  • the first substrate chuck 61 A is moved from the second position A 2 to the third position A 3 ;
  • the second substrate chuck 62 B is moved from the third position A 3 to the fourth position A 4 ;
  • the first substrate chuck 61 B is moved from the fourth position A 4 to the first position A 1 ;
  • the second substrate chuck 62 A is moved from the first position A 1 to the second position A 2 .
  • the first processing unit 63 grinds the first main surface 11 of the substrate 10 held by the first substrate chuck 61 A (S 305 ). This grinding is performed at the third position A 3 .
  • the carry-out of the substrate 10 , the cleaning of the first substrate chuck 61 B, and the carry-in of the next substrate 10 are performed, as shown in FIG. 14 .
  • the grinding of the second main surface 12 of the substrate 10 held by the second substrate chuck 62 A is performed.
  • the cleaning of the substrate 10 , the measurement of the plate thickness of the substrate 10 , and the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 B are performed.
  • the rotary table 60 is rotated by 90° from the state of FIG. 13 C , as indicated by an arrow in FIG. 13 C (S 306 ). As a result, the rotary table 60 comes into the state of FIG. 13 D .
  • the first substrate chuck 61 A is moved from the third position A 3 to the fourth position A 4 ;
  • the second substrate chuck 62 B is moved from the fourth position A 4 to the first position A 1 ;
  • the first substrate chuck 61 B is moved from the first position A 1 to the second position A 2 ;
  • the second substrate chuck 62 A is moved from the second position A 2 to the third position A 3 .
  • the substrate cleaning unit 76 cleans the substrate 10 held by the first substrate chuck 61 A (S 307 ), and the plate thickness distribution measuring unit 75 measures the plate thickness of the substrate 10 (S 308 ). Then, the first tilt angle correcting unit 95 corrects the tilt angle of the rotation axis R 2 of the first substrate chuck 61 A (S 309 ). The processes S 307 to S 309 are performed at the fourth position A 4 . In the meanwhile, at the first position A 1 , the carry-out of the substrate 10 , the cleaning of the second substrate chuck 62 B, and the carry-in of the substrate 10 are performed, as illustrated in FIG. 14 .
  • the grinding of the second main surface 12 of the substrate 10 is not performed.
  • the grinding of the first main surface 11 of the substrate 10 is not performed.
  • the rotary table 60 is rotated by 270° from the state of FIG. 13 D , as indicated by an arrow in FIG. 13 D (S 310 ). As a result, the rotary table 60 comes into the state of FIG. 13 A .
  • the first substrate chuck 61 A is moved from the fourth position A 4 to the first position A 1 ;
  • the second substrate chuck 62 B is moved from the first position A 1 to the second position A 2 ;
  • the first substrate chuck 61 B is moved from the second position A 2 to the third position A 3 ;
  • the second substrate chuck 62 A is moved from the third position A 3 to the fourth position A 4 .
  • the third transfer device 51 receives the substrate 10 from the first substrate chuck 61 A and carries it out (S 311 ), and the substrate chuck cleaning unit 77 cleans the first substrate chuck 61 A (S 312 ). Then, the processings starting from the process S 301 shown in FIG. 15 are performed again.
  • the grinding of the second main surface 12 of the substrate 10 held by the second substrate chuck 62 B is performed.
  • the grinding of the first main surface 11 of the substrate 10 held by the first substrate chuck 61 B is performed.
  • the cleaning of the substrate 10 , the measurement of the plate thickness of the substrate 10 , and the correction of the tilt angle of the rotation axis R 2 of the second substrate chuck 62 A are performed.
  • a normal operation mode the grinding of the first main surface 11 and the grinding of the second main surface 12 are performed simultaneously, as stated above. However, at the beginning of a continuous operation mode or the like, only the grinding of the first main surface 11 is performed, and at the end of the continuous operation mode or the like, only the grinding of the second main surface 12 is performed.
  • both the substrate 10 with the first main surface 11 facing upwards and the substrate 10 with the second main surface 12 facing upwards are disposed on the rotary table 60 in the normal operation mode, only the substrates 10 with the first main surfaces 11 thereof facing upwards are disposed on the rotary table 60 at the beginning of the continuous operation mode, or only the substrates 10 with the first main surfaces 12 thereof facing upwards are disposed on the rotary table 60 at the end of the continuous operation mode.
  • the grinding of the second main surface 12 is performed at the second position A 2
  • the grinding of the first main surface 11 is performed at the third position A 3
  • the grinding of the first main surface 11 may be performed at the second position A 2
  • the grinding of the second main surface 12 may be performed at the third position A 3 .
  • the substrate 10 is not limited to the silicon wafer.
  • the substrate 10 may be, for example, a silicon carbide wafer, a gallium nitride wafer, a gallium oxide wafer, or the like.
  • the substrate 10 may be a glass substrate.
  • the substrate processing system 1 is configured to grind both the first main surface 11 and the second main surface 12 of the single substrate 10 .
  • the substrate processing system 1 may be configured to grind only the first main surface 11 of one substrate 10 and only the second main surface 12 of another substrate 10 .
  • the first inverting device 34 and the second inverting device 54 may be omitted.

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KR102800501B1 (ko) * 2023-12-04 2025-04-29 주식회사 스맥 반도체 웨이퍼 폴리싱 유닛
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