US11417826B2 - Ultrasonic sensor, manufacturing method thereof and display device - Google Patents

Ultrasonic sensor, manufacturing method thereof and display device Download PDF

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US11417826B2
US11417826B2 US16/609,296 US201916609296A US11417826B2 US 11417826 B2 US11417826 B2 US 11417826B2 US 201916609296 A US201916609296 A US 201916609296A US 11417826 B2 US11417826 B2 US 11417826B2
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substrate
electrode
groove
piezoelectric layer
ultrasonic sensor
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US20210367136A1 (en
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Libin Liu
Qian Yang
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Assigned to BOE TECHNOLOGY GROUP CO., LTD. reassignment BOE TECHNOLOGY GROUP CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LIU, Libin, YANG, QIAN
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H01L41/1132—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/48—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using wave or particle radiation means
    • H01L41/0472—
    • H01L41/0477—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing

Definitions

  • Ultrasonic sensor is a sensor developed by using the characteristics of ultrasonic wave. It is a reversible sensor. It can generate mechanical vibration of the same frequency under the excitation of alternating current signal in order to serve as an ultrasonic transmitter. It can also generate electrical signals of a corresponding frequency under ultrasonic vibration of a certain frequency to serve as a receiver for the ultrasonic wave.
  • the ultrasonic sensor includes a substrate and at least one sensor component located on the substrate.
  • the sensor component includes: a first electrode, a second electrode, and a piezoelectric layer located between the first electrode and the second electrode.
  • a side of the substrate close to the sensor component is provided with a groove, and an orthographic projection of the piezoelectric layer on the substrate has a portion overlapping with a region of the groove in the substrate.
  • the first electrode is located on a side of the piezoelectric layer close to the substrate, and in a first direction parallel to the substrate, the orthographic projection of the first electrode on the substrate includes a first portion located within the groove and a second portion located on both sides of the groove.
  • the orthographic projection of the piezoelectric layer on the substrate is entirely located within the region of the groove on the substrate.
  • a depth of the groove in a direction perpendicular to the substrate is in a range of 3 to 10 ⁇ m.
  • an orthographic projection of the piezoelectric layer formed on the first electrode on the substrate entirely falls within the groove.
  • forming the second electrode on the piezoelectric layer includes: forming a planarization layer on the piezoelectric layer; forming a via hole in the planarization layer to expose the piezoelectric layer; and forming the second electrode on the planarization layer.
  • the second electrode is connected to the piezoelectric layer through the via hole.
  • FIG. 2 is a top view of an ultrasonic sensor according to an embodiment of the present disclosure
  • FIG. 3 is a side view of an ultrasonic sensor according to an embodiment of the present disclosure.
  • the absorption of the mechanical vibration signals generated by the ultrasonic sensor under the excitation of the alternating current signal by the substrate can be reduced, and the quality of the ultrasonic signal can be ensured through providing a groove in the area of the substrate that faces the piezoelectric layer.
  • FIG. 2 is a top view of an ultrasonic sensor provided by at least one embodiment of the present disclosure.
  • the first electrode 21 is located on the side of the piezoelectric layer close to the substrate 10 .
  • An orthographic projection of the first electrode 21 on the substrate 10 includes a first portion 211 located within the groove 11 and a second portion 212 located on both sides of the groove 11 in the first direction.
  • FIG. 2 is an example in which Y direction is the first direction, and X direction is the second direction.
  • the first direction and the second direction described above are directions parallel to the main plane of the substrate.
  • the first direction is perpendicular to an overlapping direction of the first electrode, the piezoelectric layer, and the second electrode.
  • the second direction is perpendicular to the first direction.
  • the first direction and the second direction in the embodiments of the present disclosure may be interchanged.
  • an X axis can also be the first direction
  • a Y axis can also be the second direction.
  • FIG. 2 takes an example that the X-axis is the second direction and the Y-axis is the first direction.
  • the dimension 12 of the groove 11 in the first direction may be in a range of 20 to 50 ⁇ m
  • the dimension w 2 of the groove 11 in the second direction may be in a range of 20 to 50 ⁇ m.
  • the dimension 1 2 of the groove 11 in the first direction may be in a range of 30 to 40 ⁇ m.
  • the dimension w 2 of the groove 11 in the second direction may be in a range of 30 to 40 ⁇ m.
  • the dimensions of the groove in the first direction and the second direction may be the same or different.
  • the embodiments of the present disclosure are not limited thereto, as long as the first electrode can expose a portion of the groove, and the first electrode includes both ends that are bridges over the groove.
  • the orthographic projection of the first electrode on the substrate may also cover the orthographic projection of the second electrode on the substrate.
  • the orthographic projection of the second electrode on the substrate entirely falls into the orthographic projection of the first electrode on the substrate.
  • the embodiments of the present disclosure are not limited thereto.
  • FIG. 3 is a side view of an ultrasonic sensor provided by an embodiment of the present disclosure.
  • the ultrasonic sensor provided by the embodiment of the present disclosure further includes: a cover plate 30 located on a side of a sensor component away from the substrate 10 .
  • FIG. 4 is a side view of an ultrasonic sensor according to another embodiment of the present disclosure
  • FIG. 5 is a partial top view of the ultrasonic sensor shown in FIG. 4
  • a region of the groove 11 on the substrate 10 covers the orthographic projection of the piezoelectric layer 22 on the substrate 10 . That is, in the present embodiment, the orthographic projection of the piezoelectric layer 22 on the substrate 10 is entirely located within the region of the groove 11 on the substrate 10 .
  • the orthographic projection of the piezoelectric layer 22 on the substrate 10 entirely falls within the orthographic projection of the first electrode 21 on the substrate 10 . That is, the orthographic projection of the piezoelectric layer 22 on the substrate 10 entirely falls within the region where the first electrode 21 overlaps with the groove 11 .
  • FIG. 6 is a side view of an ultrasonic sensor according to another embodiment of the present disclosure.
  • the ultrasonic sensor in this embodiment includes a plurality of sensor components.
  • the plurality of sensor components in the ultrasonic sensor provided by the embodiments of the present disclosure share one first electrode 21 and/or share one second electrode 23 .
  • the plurality of sensor components shown schematically in FIG. 6 share both the one first electrode 21 and the one second electrode 23 .
  • the plurality of sensor components may share only one first electrode, or the plurality of sensor components may share only one second electrode.
  • the planarization layer may be provided only at a position where the second electrode is directly opposite the first electrode so as to insulate the two electrodes.
  • FIG. 7 is a high-frequency signal generating circuit provided by an embodiment of the present disclosure.
  • the circuit diagram provided by the embodiment of the present disclosure includes: a first power source S 1 , a second power source S 2 , a first inductor L 1 , a second inductor L 2 , a first capacitor C 1 , and a second capacitor C 2 .
  • a negative pole of the first power source S 1 is grounded, and its positive pole is connected to a first end of the first inductor L 1 .
  • a negative pole of the second power source S 2 is grounded, and its positive pole is connected to a first end of the second inductor L 2 .
  • a second end of the first inductor L 1 is connected to a first end of the first capacitor C 1
  • a second end of the second inductor L 2 is connected to a second end of the second capacitor C 2
  • a second end of the first capacitor C 1 is respectively connected to a first end of the second capacitor C 2 and the negative pole of the first power source S 1
  • the first end of the first capacitor C 1 is connected to a first output end OUT 1
  • the second end of the second capacitor C 2 is connected to a second output end OUT 2 .
  • the first output end OUT 1 is connected to the first electrode, and the second output end OUT 2 is connected to the second electrode.
  • Step 100 providing a substrate.
  • the substrate may further include silicon oxide so as to block moisture.
  • Step 200 forming a groove in the substrate.
  • Step 300 forming a sensor component on a side of the substrate where the groove is formed.
  • a step of forming the sensor component includes sequentially forming the first electrode, the piezoelectric layer, and the second electrode on the substrate which are laminated.
  • the materials of the first electrode and the second electrode are conductive materials.
  • the materials of the first electrode and the second electrode may include metal materials such as platinum, iridium, gold, aluminum, copper, titanium, stainless steel, or the like, or tin oxide-based conductive materials such as indium tin oxide, fluorine-doped tin oxide, or the like.
  • the materials of the first electrode and the second electrode may also be a multi-layer conductive structure, for example, including: a first metal layer, a second metal layer, and a third metal layer.
  • the first metal layer may be made of titanium
  • the second metal layer may be made of aluminum
  • the third metal layer may be made of titanium.
  • the first metal layer is on a side close to the substrate, and the second metal layer is located between the first metal layer and the third metal layer.
  • the materials and structures of the first electrode and the second electrode are not limited in the embodiments of the present disclosure.
  • the piezoelectric layer may include polydifluoroethylene, aluminum nitride (AlN), or a composite oxide of a perovskite structure of lead zirconate titanate and the like, as long as it can have a piezoelectric effect.
  • a surface of the filling material formed is flush with a surface of the substrate, so that the surface of the first electrode formed on the filling material and the substrate facing the substrate is substantially planar.
  • the filling material can be molybdenum.
  • the filling material may be entirely etched away, or only a portion of the filling material may be etched, as long as the side of the groove that faces the first electrode can form a cavity.
  • a step of forming the second electrode 23 on the piezoelectric layer 22 provided by the embodiment of the present disclosure includes: forming a planarization layer 24 on the piezoelectric layer 22 and forming the second electrode 23 on the planarization layer 24 .
  • the material of the planarization layer may use flexible materials such as polyimide.
  • Step 401 as shown in FIG. 9A , a substrate 10 is provided, and a groove 11 is formed in the substrate 10 by an etching process.
  • the substrate 10 is a flexible substrate, which may be made of polyimide (PI).
  • PI polyimide
  • Step 402 as shown in FIG. 9B , the groove 11 formed in the substrate 10 is filled with the filling material 111 , and a first electrode 21 is formed on the substrate 10 .
  • a gap is included between an edge of the orthographic projection of the first electrode on the substrate and an edge of the orthographic projection of the filling material on the substrate, which is also a gap between the first electrode and the groove for exposing the filling material.
  • the filling material 111 may be deposited on the substrate 10 by a process of vacuum sputtering, evaporation, or coating and the like.
  • the filling material 111 may be molybdenum, which is different from the material of the first electrode.
  • Step 404 as shown in FIG. 1 , a piezoelectric layer 22 is formed on the first electrode 21 , and a second electrode 23 is formed on the piezoelectric layer 22 .
  • the groove 11 is formed in the substrate 10 through steps 401 to 403 , and after the first electrode 21 is formed on the substrate 10 , the method further includes: forming a piezoelectric layer 22 on the first electrode 21 ; depositing a flat material on the piezoelectric layer 22 , and forming a planarization layer 24 by a patterning process; and forming a second electrode 23 on the planarization layer 24 .
  • the second electrode 23 is connected to the piezoelectric layer 22 through a via hole 241 in the planarization layer 24 .
  • the ultrasonic sensor formed is as shown in FIG. 4 .
  • the sensor component can be formed on other substrates and then transferred to the substrate in the present application.
  • the display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc., which is not limited in this embodiment.
  • a display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc., which is not limited in this embodiment.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
US16/609,296 2018-05-30 2019-05-17 Ultrasonic sensor, manufacturing method thereof and display device Active 2040-05-16 US11417826B2 (en)

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CN201810541399.2 2018-05-30
CN201810541399.2A CN108955736B (zh) 2018-05-30 2018-05-30 一种超声波传感器及其制作方法、显示装置
PCT/CN2019/087453 WO2019228198A1 (zh) 2018-05-30 2019-05-17 超声波传感器及其制作方法、显示装置

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CN108955736B (zh) * 2018-05-30 2020-03-06 京东方科技集团股份有限公司 一种超声波传感器及其制作方法、显示装置
CN109829419B (zh) * 2019-01-28 2021-08-24 京东方科技集团股份有限公司 指纹识别模组及其驱动方法和制作方法、显示装置
CN109948496B (zh) * 2019-03-12 2022-07-08 京东方科技集团股份有限公司 一种指纹识别器件及显示装置
CN109993156B (zh) * 2019-04-24 2022-09-06 京东方科技集团股份有限公司 超声波指纹识别面板及显示装置
CN110221467A (zh) * 2019-05-21 2019-09-10 武汉华星光电技术有限公司 显示面板构造及电子装置
CN110987159B (zh) * 2019-12-18 2022-09-16 京东方科技集团股份有限公司 声压传感器
WO2022011606A1 (zh) * 2020-07-15 2022-01-20 深圳市汇顶科技股份有限公司 超声换能器与电子设备
CN112181208B (zh) * 2020-10-30 2023-06-02 业泓科技(成都)有限公司 触控辨识装置、显示装置及其制造方法

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WO2019228198A1 (zh) 2019-12-05
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US20210367136A1 (en) 2021-11-25

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