US10432844B2 - Image pickup device and electronic apparatus with an image plane phase difference detection pixel - Google Patents

Image pickup device and electronic apparatus with an image plane phase difference detection pixel Download PDF

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US10432844B2
US10432844B2 US15/547,571 US201615547571A US10432844B2 US 10432844 B2 US10432844 B2 US 10432844B2 US 201615547571 A US201615547571 A US 201615547571A US 10432844 B2 US10432844 B2 US 10432844B2
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photoelectric conversion
section
phase difference
lower electrode
light
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US20180027171A1 (en
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Kyohei YOSHIMURA
Toshifumi Wakano
Yusuke Otake
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Sony Semiconductor Solutions Corp
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    • H04N5/23212—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/365—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals by analysis of the spatial frequency components of the image
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/307—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H04N5/3696—
    • H04N9/045—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N5/357—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present disclosure relates to image pickup devices and electronic apparatuses, and more particularly to an image pickup device including a normal pixel for obtaining an image signal and an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference automatic focusing (AF), and electronic apparatuses.
  • an image pickup device including a normal pixel for obtaining an image signal and an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference automatic focusing (AF), and electronic apparatuses.
  • AF image plane phase difference automatic focusing
  • an image pickup device including a normal pixel and an image plane phase difference detection pixel, in which an organic photoelectric conversion film is provided in addition to a photodiode (PD) as photoelectric conversion sections of the image pickup device (for example, see Patent Document 1).
  • PD photodiode
  • the image pickup device has a configuration in which, as major constituent elements, an on-chip lens, a transparent upper electrode, an organic photoelectric conversion film, a transparent lower electrode, and a PD are formed in order from a light-incident side.
  • the lower electrode of the organic photoelectric conversion film of the image plane phase difference detection pixel is provided with a slit at an optical center of the on-chip lens where intensity of incident light is highest.
  • the lower electrode of the organic photoelectric conversion film is provided with a slit as described above in the image pickup device described in Patent Document 1, a lot of light passes through the slit of the lower electrode without being photoelectrically converted by the organic photoelectric conversion film and is photoelectrically converted by the PD into color mixture.
  • the incident light leaks from the slit to the lower layer side, which can generate noise.
  • the present disclosure has been made in view of such circumstances, and is intended to keep generation of noise resulting from leakage of incident light within a pixel under control.
  • An image pickup device that is a first aspect of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF, and the image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light.
  • the lower electrode section can include a first lower electrode section and a second lower electrode section that are unevenly two-divided at the position that avoids the center of the incident light.
  • the upper electrode section can include a member that transmits light, and the lower electrode section can include a member that reflects light.
  • An output of one of the first and the second lower electrode sections can be used as the phase difference signal for image plane phase difference AF.
  • Outputs of the first and the second lower electrode sections can be added to be used as an image signal.
  • the image pickup device that is the first aspect of the present disclosure can further include a normal pixel for obtaining an image signal.
  • the image plane phase difference detection pixel can further include a light concentrating section that concentrates the incident light on the first photoelectric conversion section, and the lower electrode section can be unevenly two-divided at a position that avoids an optical center of the light concentrating section.
  • the image plane phase difference detection pixel can further include a color filter that is colored on a pixel-by-pixel basis, the color filter causing only a specified wavelength component of the incident light to pass through the color filter and to enter the first photoelectric conversion section.
  • the first photoelectric conversion section can generate an electric charge in response to only a specified wavelength component of the incident light.
  • the lower electrode section can include a member that transmits the incident light
  • the image plane phase difference detection pixel can further include a second photoelectric conversion section that generates an electric charge in response to light that passes through the first photoelectric conversion section and the lower electrode section.
  • At least one of the first and the second photoelectric conversion sections can be an organic photoelectric conversion film.
  • An electronic apparatus that is a second aspect of the present disclosure is equipped with an image pickup device including an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF, and the image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light.
  • An image pickup device that is a third aspect of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF, and the image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge to be used as an image signal in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section; a second photoelectric conversion section that generates an electric charge to be used as the phase detection signal in response to light that passes through the first photoelectric conversion section and the lower electrode section; and a light-shielding section formed between the lower electrode section and the second photoelectric conversion section to cover a center of the light that passes through the first photoelectric conversion section and the
  • the light-shielding section can include a member that reflects light.
  • An electronic apparatus that is a fourth aspect of the present disclosure is equipped with an image pickup device including an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF, and the image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge to be used as an image signal in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section; a second photoelectric conversion section that generates an electric charge to be used as the phase detection signal in response to light that passes through the first photoelectric conversion section and the lower electrode section; and a light-shielding section formed between the lower electrode section and the second photoelectric conversion section to cover a center of the light that passes through the first
  • occurrence of color mixture or noise can be inhibited.
  • FIG. 1 is a cross-sectional view illustrating a first configuration example of an image pickup device to which the present disclosure is applied.
  • FIG. 2 is a cross-sectional view illustrating a second configuration example of the image pickup device to which the present disclosure is applied.
  • FIG. 3 is a cross-sectional view illustrating a third configuration example of the image pickup device to which the present disclosure is applied.
  • FIG. 4 is a cross-sectional view illustrating a fourth configuration example of the image pickup device to which the present disclosure is applied.
  • FIG. 5 is a cross-sectional view illustrating a fifth configuration example of the image pickup device to which the present disclosure is applied.
  • FIG. 6 is a cross-sectional view illustrating a sixth configuration example of the image pickup device to which the present disclosure is applied.
  • FIG. 7 is a cross-sectional view illustrating a seventh configuration example of the image pickup device to which the present disclosure is applied.
  • FIG. 8 is a diagram illustrating an exemplary use of electronic apparatuses to which the present disclosure is applied.
  • FIG. 1 is a cross-sectional view illustrating a first configuration example of an image pickup device to which the present disclosure is applied.
  • the image pickup device 10 includes normal pixels 11 and image plane phase difference detection pixels 12 , and has a configuration in which, as major constituent elements, an on-chip lens (OCL) 13 , a color filter (CF) 14 , an upper electrode 15 , an organic photoelectric conversion film 16 , and a lower electrode 17 are formed in order from a light-incident side. Furthermore, on a lower layer side of the lower electrode 17 , various pixel transistors, floating diffusion (FD), and the like are formed (reference numerals are omitted).
  • OCL on-chip lens
  • CF color filter
  • the on-chip lens 13 is formed in each pixel, and concentrates incident light onto the organic photoelectric conversion film 16 .
  • a constituent element other than the on-chip lens 13 may be used.
  • the color filter 14 has a color of red (R) or blue (B) in the normal pixel 11 .
  • the color filter 14 has a color of green (G) in the image plane phase difference detection pixel 12 .
  • a Bayer array is applicable to arrangement of R, G, and B.
  • a ClearVid array may be applied to arrangement of R, G, and B.
  • the image plane phase difference detection pixels 12 with the color G of the color filter 14 are adjacent to each other, a phase difference signal with a short distance between the image plane phase difference detection pixels 12 can be obtained.
  • the color of the color filter 14 of the image plane phase difference detection pixel 12 is not limited to G, and may be R or B.
  • the upper electrode 15 is formed of a transparent material that transmits the incident light concentrated by the on-chip lens 13 .
  • the organic photoelectric conversion film 16 responds to light of wavelengths of R, G, and B, and generates an electric charge according to light quantity of the incident light.
  • the lower electrode 17 is made of a metal material or the like that reflects light.
  • the lower electrode 17 reflects light that passes through the organic photoelectric conversion film 16 and thereby makes an optical path of the incident light longer, which can enhance efficiency of photoelectric conversion in the organic photoelectric conversion film 16 . In addition, this can decrease thickness of the organic photoelectric conversion film 16 .
  • the lower electrode 17 is formed without division of an area of one pixel.
  • an area of one pixel is unevenly divided by a slit that is so provided as to avoid an optical center of the on-chip lens 13 . Accordingly, the lower electrode 17 is formed at a position where intensity of the incident light is highest, which can inhibit the incident light from leaking to layers lower than the lower electrode 17 . Therefore, this can inhibit occurrence of noise or color mixture.
  • the lower electrode 17 of the image plane phase difference detection pixel 12 includes a longer lower electrode 17 - 1 and a shorter lower electrode 17 - 2 .
  • the number of divisions of the lower electrode 17 of the image plane phase difference detection pixel 12 is not limited to two.
  • the longer lower electrode 17 - 1 can obtain a pixel output with higher sensitivity than the shorter lower electrode 17 - 2 .
  • the shorter lower electrode 17 - 2 can obtain a pixel output with a better separation ratio than the longer lower electrode 17 - 1 . Therefore, using the pixel output of one of the lower electrodes 17 - 1 and 17 - 2 allows implementation of high-precision image plane phase difference AF.
  • the incident light concentrated by the on-chip lens 13 enters the organic photoelectric conversion film 16 through the color filter 14 and the upper electrode 15 , and is then converted into an electric charge.
  • the converted electric charge is output to a downstream stage (FD or the like) through the lower electrode 17 .
  • the output from the normal pixel 11 is used as an image signal.
  • a plurality of outputs is obtained from the lower electrodes 17 - 1 and 17 - 2 , and one of these outputs is used as a phase difference signal for image plane phase difference AF. Adding the plurality of outputs from the image plane phase difference detection pixel 12 provides an output equivalent to the output from the normal pixel 11 .
  • the on-chip lens 13 may be omitted from constituent elements of the image pickup device 10 illustrated in FIG. 1 . In that case, an effect of inhibiting occurrence of noise or color mixture cannot be expected, but a pixel output with high sensitivity and a pixel output with a good separation ratio can be obtained. Using one of the pixel outputs allows implementation of high-precision image plane phase difference AF.
  • FIG. 2 is a cross-sectional view illustrating a second configuration example of the image pickup device to which the present disclosure is applied.
  • the image pickup device 20 is not provided with normal pixels.
  • the structure of the image plane phase difference detection pixel 12 in the image pickup device 10 illustrated in FIG. 1 is employed in all the pixels (except for color of color filters). Note that, of constituent elements of the image pickup device 20 , the already mentioned constituent elements common to the image pickup device 10 are denoted with the same reference numerals, and thus descriptions thereof will be omitted as appropriate. This similarly applies to the configuration examples described below.
  • the image pickup device 20 all the pixels are the image plane phase difference detection pixels 12 , and either one of R, G and B is employed as color of the color filter 14 .
  • R, G and B is employed as color of the color filter 14 .
  • a Bayer array is applicable to arrangement of R, G, and B.
  • the lower electrode 17 is multiple-divided in every pixel of the image pickup device 20 .
  • incident light concentrated by the on-chip lens 13 enters the organic photoelectric conversion film 16 through the color filter 14 and the upper electrode 15 , and is then converted into an electric charge.
  • the converted electric charge is output to a downstream stage (FD or the like) through the lower electrode 17 .
  • an image signal can be obtained by adding a plurality of outputs in each pixel (outputs of the lower electrodes 17 - 1 and 17 - 2 ).
  • an arbitrary pixel out of all the pixels can be selected and the plurality of outputs of the pixel can be used as phase difference signals for image plane phase difference AF.
  • the on-chip lens 13 may be omitted from constituent elements of the image pickup device 20 illustrated in FIG. 2 . In that case, an effect of inhibiting occurrence of noise or color mixture cannot be expected, but a pixel output with high sensitivity and a pixel output with a good separation ratio can be obtained. Using one of the pixel outputs allows implementation of high-precision image plane phase difference AF.
  • FIG. 3 is a cross-sectional view illustrating a third configuration example of the image pickup device to which the present disclosure is applied.
  • the image pickup device 30 includes normal pixels 31 and image plane phase difference detection pixels 32 , and has a configuration in which, as major constituent elements, the on-chip lens 13 , the upper electrode 15 , a specified wavelength limited organic photoelectric conversion film 33 , and the lower electrode 17 are formed in order from a light-incident side. Furthermore, on a lower layer side of the lower electrode 17 , various pixel transistors, FD, and the like are formed (reference numerals are omitted).
  • the specified wavelength limited organic photoelectric conversion film 33 responds only to light of a wavelength of either one of R, G, and B, and generates an electric charge according to quantity of the light. That is, the specified wavelength limited organic photoelectric conversion film 33 of the left-end normal pixel 31 in the diagram responds only to light of a wavelength of R.
  • the specified wavelength limited organic photoelectric conversion film 33 of the central image plane phase difference detection pixel 32 in the diagram responds only to light of a wavelength of G.
  • the specified wavelength limited organic photoelectric conversion film 33 of the right-end normal pixel 31 in the diagram responds only to light of a wavelength of R.
  • incident light concentrated by the on-chip lens 13 enters the specified wavelength limited organic photoelectric conversion film 16 through the upper electrode 15 , and is then converted into an electric charge.
  • the converted electric charge is output to a downstream stage (FD or the like) through the lower electrode 17 .
  • the pixel output from the normal pixel 31 is used as an image signal.
  • a plurality of outputs is obtained from the lower electrodes 17 - 1 and 17 - 2 , and one of these outputs is used as a phase difference signal for image plane phase difference AF. Adding the plurality of outputs from the image plane phase difference detection pixel 32 provides a pixel output equivalent to the pixel output from the normal pixel 31 .
  • the on-chip lens 13 may be omitted from constituent elements of the image pickup device 30 illustrated in FIG. 3 . In that case, an effect of inhibiting occurrence of noise or color mixture cannot be expected, but a pixel output with high sensitivity and a pixel output with a good separation ratio can be obtained. Using one of the pixel outputs allows implementation of high-precision image plane phase difference AF.
  • FIG. 4 is a cross-sectional view illustrating a fourth configuration example of the image pickup device to which the present disclosure is applied.
  • the image pickup device 40 includes normal pixels 41 and image plane phase difference detection pixels 42 . Two photoelectric conversion sections (a specified wavelength limited organic photoelectric conversion film 43 and a PD 46 ) are formed in each pixel.
  • the image pickup device 40 has a configuration in which, as major constituent elements, the on-chip lens 13 , the upper electrode 15 , the specified wavelength limited organic photoelectric conversion film 43 , a lower electrode 44 , a color filter (CF) 45 , and the PD 46 are formed in order from a light-incident side.
  • the specified wavelength limited organic photoelectric conversion film 43 responds only to light of a wavelength of G, and generates an electric charge according to quantity of the light.
  • the lower electrode 44 is formed of a transparent member that transmits light, and outputs the electric charge converted by the specified wavelength limited organic photoelectric conversion film 43 to a downstream stage.
  • the lower electrode 44 is formed without division of an area of one pixel, in a similar manner to the lower electrode 17 or the like of the image pickup device 10 or the like.
  • an area of one pixel of the lower electrode 44 is unevenly divided by a slit that is so provided as to avoid the optical center of the on-chip lens 13 . Accordingly, in the image plane phase difference detection pixels 42 , the longer lower electrode 44 - 1 can obtain a pixel output with higher sensitivity than the shorter lower electrode 44 - 2 . On the other hand, the shorter lower electrode 44 - 2 can obtain a pixel output with a better separation ratio than the longer lower electrode 44 - 1 . Therefore, using the pixel output of one of the lower electrodes 44 - 1 and 44 - 2 allows implementation of high-precision image plane phase difference AF.
  • the color filter 45 has color of R or B in the normal pixel 41 , and color of white (W) in the image plane phase difference detection pixel 42 . Note that color arrangement of the color filter 45 is not limited to the above-described example.
  • the PD 46 In the first and third normal pixels 41 from the left end in the diagram, the PD 46 generates an electric charge in response to light of R or B that has passed through the specified wavelength limited organic photoelectric conversion film 43 and the color filter 44 of R or B. In the second and fourth image plane phase difference detection pixels 42 from the left end in the diagram, the PD 46 generates an electric charge in response to light of magenta (Mg) that has passed through the specified wavelength limited organic photoelectric conversion film 43 and the color filter 44 of W. Note that a photoelectric conversion film may be disposed instead of the PD 46 .
  • Mg magenta
  • incident light concentrated by the on-chip lens 13 enters the specified wavelength limited organic photoelectric conversion film 43 through the upper electrode 15 , and a G component of the incident light is converted into an electric charge. Furthermore, light other than the G component that has passed through the specified wavelength limited organic photoelectric conversion film 43 enters the PD 46 through the lower electrode 44 and the color filter 45 , and is converted into an electric charge.
  • the electric charge generated by the specified wavelength limited organic photoelectric conversion film 43 of the normal pixels 41 is output to a downstream stage through the lower electrode 44 , and is used as a G component of an image signal.
  • the electric charge generated by the PD 46 of the normal pixel 41 is output to a downstream stage through an electrode (not illustrated), and is used as an R or B component of an image signal.
  • the electric charge generated by the specified wavelength limited organic photoelectric conversion film 43 of the image plane phase difference detection pixels 42 is output to a downstream stage from the lower electrodes 44 - 1 and 44 - 2 , and the output from one of the lower electrodes 44 - 1 and 44 - 2 is used as a phase difference signal for image plane phase difference AF.
  • the outputs from the lower electrodes 44 - 1 and 44 - 2 can be used as a pixel signal of the G component equivalent to the normal pixel 41 .
  • the electric charge generated by the PD 46 of the image plane phase difference detection pixels 42 is output to a downstream stage through an electrode (not illustrated), and is used as an Mg component of an image signal.
  • the on-chip lens 13 may be omitted from constituent elements of the image pickup device 40 illustrated in FIG. 4 . In that case, an effect of inhibiting occurrence of noise or color mixture cannot be expected, but a pixel output with high sensitivity and a pixel output with a good separation ratio can be obtained. Using one of the pixel outputs allows implementation of high-precision image plane phase difference AF.
  • FIG. 5 is a cross-sectional view illustrating a fifth configuration example of the image pickup device to which the present disclosure is applied.
  • the image pickup device 50 includes normal pixels 51 and image plane phase difference detection pixels 52 . Two photoelectric conversion sections (the specified wavelength limited organic photoelectric conversion film 43 and the PD 46 ) are formed in each pixel.
  • the image pickup device 50 has a configuration in which, as major constituent elements, the on-chip lens 13 , a color filter 53 , the upper electrode 15 , the specified wavelength limited organic photoelectric conversion film 43 , a lower electrode 54 , and the PD 46 are formed in order from a light-incident side. Furthermore, in the image plane phase difference detection pixel 52 , a light-shielding film 55 is formed between the lower electrode 54 and the PD 46 .
  • the color filter 53 has color of yellow (Ye) or cyan (Cy) in the normal pixel 51 , and color of white (W) in the image plane phase difference detection pixel 52 . Note that color arrangement of the color filter 45 is not limited to the above-described example.
  • the specified wavelength limited organic photoelectric conversion film 43 responds only to light of a wavelength of G, and generates an electric charge according to quantity of the light.
  • the lower electrode 54 is formed of a transparent member that transmits light.
  • the lower electrode 54 is formed without division of an area of one pixel in both the normal pixels 51 and the image plane phase difference detection pixels 52 .
  • the light-shielding film 55 provided only in the image plane phase difference detection pixel 52 is made of a member that reflects light, such as metal, and is formed to cover the optical center of the on-chip lens 13 . Note that adjustment of a horizontal length of the light-shielding film 55 allows adjustment of sensitivity of the specified wavelength limited organic photoelectric conversion film 43 to light of a wavelength of G, and adjustment of light quantity entering the PD 46 that generates an electric charge serving as a basis for a phase difference signal.
  • the PD 46 In the first and third normal pixels 51 from the left end in the diagram, the PD 46 generates an electric charge in response to light of R or B that has passed through the color filter 53 of Ye or Cy and the specified wavelength limited organic photoelectric conversion film 43 . In the second and fourth image plane phase difference detection pixels 52 from the left end in the diagram, the PD 46 generates an electric charge in response to light of Mg that has passed through the color filter 44 of W and the specified wavelength limited organic photoelectric conversion film 43 .
  • incident light concentrated by the on-chip lens 13 enters the specified wavelength limited organic photoelectric conversion film 43 through the color filter 53 and the upper electrode 15 , and a G component of the incident light is converted into an electric charge. Furthermore, light that has passed through the specified wavelength limited organic photoelectric conversion film 43 enters the PD 46 through the lower electrode 54 , and is then converted into an electric charge.
  • incidence of light into the PD 46 is limited by the light-shielding film 55 .
  • the electric charge generated by the specified wavelength limited organic photoelectric conversion film 43 of the normal pixels 51 and the image plane phase difference detection pixels 52 is output to a downstream stage through the lower electrode 54 , and is used as a G component of an image signal.
  • the electric charge generated by the PD 46 of the normal pixel 51 is output to a downstream stage through an electrode (not illustrated), and is used as an R or B component of an image signal.
  • the electric charge generated by the PD 46 of the image plane phase difference detection pixel 52 in response to light of a wavelength of Mg is output to a downstream stage through an electrode (not illustrated).
  • an electrode (not illustrated).
  • One of them is used as a phase difference signal for image plane phase difference AF.
  • FIG. 6 is a cross-sectional view illustrating a sixth configuration example of the image pickup device to which the present disclosure is applied.
  • the image pickup device 60 includes normal pixels 61 and the image plane phase difference detection pixels 62 . Two photoelectric conversion sections (the specified wavelength limited organic photoelectric conversion film 43 and a PD 64 ) are formed in each pixel.
  • the image pickup device 60 has a configuration in which, as major constituent elements, the on-chip lens 13 , the upper electrode 15 , the specified wavelength limited organic photoelectric conversion film 43 , the lower electrode 54 , a color filter 63 , and the PD 64 are formed in order from a light-incident side. Furthermore, in the image plane phase difference detection pixel 62 , the light-shielding film 55 is formed between the lower electrode 54 and the color filter 63 .
  • the color filter 63 has color of R or B.
  • the color filter 63 has color of B in the normal pixel 61 , and color of R in the image plane phase difference detection pixel 62 .
  • color arrangement of the color filter 45 is not limited to the above-described example.
  • the PD 64 In the first and third image plane phase difference detection pixels 62 from the left end in the diagram, the PD 64 generates an electric charge in response to light of a wavelength of R that has passed through the specified wavelength limited organic photoelectric conversion film 43 and the color filter 63 of R. In the second and fourth normal pixels 61 from the left end in the diagram, the PD 64 generates an electric charge in response to light of a wavelength of B that has passed through the specified wavelength limited organic photoelectric conversion film 43 and the color filter 63 of B.
  • incident light concentrated by the on-chip lens 13 enters the specified wavelength limited organic photoelectric conversion film 43 through the upper electrode 15 , and a G component of the light is converted into an electric charge. Furthermore, light that has passed through the specified wavelength limited organic photoelectric conversion film 43 enters the PD 64 through the lower electrode 54 and the color filter 63 , and is then converted into an electric charge.
  • incidence of light into the PD 64 is limited by the light-shielding film 55 .
  • the electric charge generated by the specified wavelength limited organic photoelectric conversion film 43 of the normal pixel 61 and the image plane phase difference detection pixel 62 is output to a downstream stage through the lower electrode 54 , and is used as a G component of an image signal.
  • the electric charge generated by the PD 64 of the normal pixel 61 is output to a downstream stage through an electrode (not illustrated), and is used as an R component of an image signal.
  • the electric charge generated by the PD 64 of the image plane phase difference detection pixel 62 is output to a downstream stage through an electrode (not illustrated), and is used as a phase difference signal for image plane phase difference AF.
  • FIG. 7 is a variation of the image pickup device 10 illustrated in FIG. 1 . That is, the variation illustrates a configuration example of an image sensor in which a sensor section 71 corresponding to the image pickup device 10 of FIG. 1 , a logic section 72 including an analog digital converter (A/D converter) and the like, and a memory section 73 are stacked.
  • the image sensor enables high-speed operation response by frame memory correlated double. sampling (CDS).
  • CDS frame memory correlated double. sampling
  • using the logic section 72 and the memory section 73 for image plane phase difference AF enables high-speed AF.
  • FIG. 8 is a diagram illustrating an exemplary use of electronic apparatuses that use the above-described image pickup devices 10 to 60 .
  • the above-described image pickup devices 10 to 60 can be used, for example, in various cases of sensing light, such as visible light, infrared light, ultraviolet light, and X-ray, as follows.
  • the present disclosure may also have the following configurations.
  • An image pickup device including an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF, the image plane phase difference detection pixel including:
  • a first photoelectric conversion section that generates an electric charge in response to incident light
  • an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section;
  • a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light.
  • the lower electrode section includes a first lower electrode section and a second lower electrode section that are unevenly two-divided at the position that avoids the center of the incident light.
  • the upper electrode section includes a member that transmits light
  • the lower electrode section includes a member that reflects light.
  • the image pickup device any one of (1) to (5) described above, further including a normal pixel for obtaining an image signal.
  • the image plane phase difference detection pixel further includes a light concentrating section that concentrates the incident light on the first photoelectric conversion section, and
  • the lower electrode section is unevenly two-divided at a position that avoids an optical center of the light concentrating section.
  • the image plane phase difference detection pixel further includes a color filter that is colored on a pixel-by-pixel basis, the color filter causing only a specified wavelength component of the incident light to pass through the color filter and to enter the first photoelectric conversion section.
  • the image pickup device according to any one of (1) to (8) described above, wherein the first photoelectric conversion section generates an electric charge in response to only a specified wavelength component of the incident light.
  • the lower electrode section includes a member that transmits the incident light
  • the image plane phase difference detection pixel further includes a second photoelectric conversion section that generates an electric charge in response to light that passes through the first photoelectric conversion section and the lower electrode section.
  • a first photoelectric conversion section that generates an electric charge in response to incident light
  • an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section;
  • a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light.
  • An image pickup device including an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF, the image plane phase difference detection pixel including:
  • a first photoelectric conversion section that generates an electric charge to be used as an image signal in response to incident light
  • an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section;
  • a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section;
  • a second photoelectric conversion section that generates an electric charge to be used as the phase detection signal in response to light that passes through the first photoelectric conversion section and the lower electrode section;
  • a light-shielding section formed between the lower electrode section and the second photoelectric conversion section to cover a center of the light that passes through the first photoelectric conversion section and the lower electrode section.
  • the light-shielding section includes a member that reflects light.
  • a first photoelectric conversion section that generates an electric charge to be used as an image signal in response to incident light
  • an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section;
  • a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section;
  • a second photoelectric conversion section that generates an electric charge to be used as the phase detection signal in response to light that passes through the first photoelectric conversion section and the lower electrode section;
  • a light-shielding section formed between the lower electrode section and the second photoelectric conversion section to cover a center of the light that passes through the first photoelectric conversion section and the lower electrode section.

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