TWM618520U - Hard material processing device and system thereof - Google Patents

Hard material processing device and system thereof Download PDF

Info

Publication number
TWM618520U
TWM618520U TW110205916U TW110205916U TWM618520U TW M618520 U TWM618520 U TW M618520U TW 110205916 U TW110205916 U TW 110205916U TW 110205916 U TW110205916 U TW 110205916U TW M618520 U TWM618520 U TW M618520U
Authority
TW
Taiwan
Prior art keywords
processed
hard material
processing
procedure
heating
Prior art date
Application number
TW110205916U
Other languages
Chinese (zh)
Inventor
寇崇善
葉文勇
張伯昌
吳坤益
陳建勳
Original Assignee
日揚科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日揚科技股份有限公司 filed Critical 日揚科技股份有限公司
Priority to JP2021002936U priority Critical patent/JP3234377U/en
Publication of TWM618520U publication Critical patent/TWM618520U/en

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material

Abstract

A hard material processing device is suitable for processing a product containing a hard material. The device comprises: a heating element for performing a first heating process on the product to heat the product to a first temperature sufficient to reduce the hardness of the hard material of the product, so as to temporarily reduce the hardness of the hard material of the product during the first heating process; and at least one first processing element for simultaneously performing a first processing process on the product that temporarily reduces the hardness of the hard material of the product while the heating element performs the first heating process on the product. Therefore, the processing speed and productivity can be increased, and the wear of the processing element can also be reduced.

Description

硬質材料加工裝置及其系統Hard material processing device and its system

本創作是有關於一種裝置及系統,特別是有關於一種硬質材料加工裝置及其系統。This creation is about a device and system, especially a hard material processing device and system.

近年來,由於半導體技術不斷地蓬勃發展,使得科技類產品得以大步躍進。在半導體製程中,常使用加工元件對晶圓等材料進行切割、研磨或拋光等加工程序。半導體材料,例如碳化矽(SiC),具有寬能帶隙性質、高硬度、高導熱率以及化學惰性性質等優點,因此是製備高溫電子元件、高頻大功率元件更為理想的材料。然而碳化矽的高硬度特性,卻不易於切片、研磨或拋光等加工程序的進行,亦會對加工元件等刀具造成磨損。因此,如何提升高硬度半導體材料的加工效率及品質,實屬當前重要研發課題之一。In recent years, due to the continuous vigorous development of semiconductor technology, technological products have been able to make great strides. In the semiconductor manufacturing process, processing components are often used to cut, grind, or polish wafers and other materials. Semiconductor materials, such as silicon carbide (SiC), have the advantages of wide energy band gap, high hardness, high thermal conductivity, and chemical inertness. Therefore, they are more ideal materials for the preparation of high-temperature electronic components, high-frequency and high-power components. However, the high hardness of silicon carbide is not easy to perform processing procedures such as slicing, grinding or polishing, and it will also cause wear on the processing elements and other tools. Therefore, how to improve the processing efficiency and quality of high-hardness semiconductor materials is indeed one of the current important research and development topics.

有鑑於上述習知技藝之問題,本創作之一目的就是在提供一種硬質材料加工裝置及其系統,以提高加工速度、提升產能,並能減少加工元件的磨損。In view of the above-mentioned problems of the prior art, one of the purposes of this creation is to provide a hard material processing device and its system to increase the processing speed, increase the productivity, and reduce the wear of the processing components.

為達前述目的,本創作提出一種硬質材料加工裝置,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,藉以於進行該第一加熱程序時暫時性降低該待加工物之該硬質材料之該硬度;以及至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序。In order to achieve the foregoing objective, the present creation proposes a hard material processing device, which is suitable for an object to be processed containing a hard material, and at least includes: a heating element, which performs a first heating procedure on the object to be processed, The object to be processed is heated to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, so as to temporarily reduce the hardness of the hard material of the object to be processed during the first heating process; and at least one The first processing element, when the heating element performs the first heating procedure on the object to be processed, the first processing element simultaneously performs a first processing procedure on the object to be processed that temporarily reduces the hardness of the hard material .

其中,該第一加工程序為切割、研磨及/或拋光程序。Wherein, the first processing procedure is a cutting, grinding and/or polishing procedure.

其中,該第一加工元件係於一含油環境中對該待加工物進行該第一加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。Wherein, the first processing element performs the first processing procedure on the object to be processed in an oil-containing environment, and the oil-containing environment contains a high-temperature resistant oil that can withstand the first temperature.

其中,該第一溫度為大於攝氏100度 。Wherein, the first temperature is greater than 100 degrees Celsius.

其中,該待加工物之該硬質材料為碳化矽,且該第一加工元件對該待加工物進行該第一加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序,使得該硬質材料之該硬度暫時性降低至接近矽之硬度。Wherein, the hard material of the object to be processed is silicon carbide, and when the first processing element performs the first processing procedure on the object to be processed, the heating element simultaneously performs the first heating procedure on the object to be processed, The hardness of the hard material is temporarily reduced to close to the hardness of silicon.

其中,該待加工物為碳化矽錠。Among them, the to-be-processed object is a silicon carbide ingot.

其中,該加熱元件於該第一加熱程序係接觸式或非接觸式加熱該待加工物。Wherein, the heating element heats the object to be processed in a contact type or a non-contact type in the first heating process.

其中,該加熱元件為射頻加熱元件或微波加熱元件。Wherein, the heating element is a radio frequency heating element or a microwave heating element.

本創作另提出一種硬質材料加工系統,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序及一第二加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,藉以於進行該第一加熱程序及該第二加熱程序時暫時性降低該待加工物之該硬質材料之該硬度;至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序;以及至少一第二加工元件,在該加熱元件對該待加工物進行該第二加熱程序時,該第二加工元件係同時對已經過該第一加工程序且暫時性降低該硬質材料之該硬度之該待加工物進行一第二加工程序。This creation also proposes a hard material processing system, which is suitable for an object to be processed containing a hard material, and at least includes: a heating element for performing a first heating process and a second heating process on the object to be processed, The object to be processed is heated to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, so as to temporarily reduce the hardness of the object to be processed during the first heating process and the second heating process The hardness of the material; at least one first processing element, when the heating element performs the first heating procedure on the object to be processed, the first processing element simultaneously reduces the hardness of the hard material to the to-be-processed The object performs a first processing procedure; and at least one second processing element. When the heating element performs the second heating procedure on the object to be processed, the second processing element simultaneously performs the first processing procedure and temporarily The object to be processed, which reduces the hardness of the hard material, undergoes a second processing procedure.

本創作之硬質材料加工系統,更包含至少一清潔元件,在該待加工物經過該第一加工程序及/或該第二加工程序之後,該清潔元件係對該待加工物進行一清潔程序。The hard material processing system of the present invention further includes at least one cleaning element. After the object to be processed passes through the first processing procedure and/or the second processing procedure, the cleaning element performs a cleaning procedure on the object to be processed.

其中,該第一加工程序為切割程序,該第二加工程序為研磨及/或拋光程序。Wherein, the first processing procedure is a cutting procedure, and the second processing procedure is a grinding and/or polishing procedure.

其中,該第一加工元件及/或該第二加工元件係於一含油環境中對該待加工物進行該第一加工程序及/或該第二加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。Wherein, the first processing element and/or the second processing element perform the first processing procedure and/or the second processing procedure on the object to be processed in an oil-containing environment, and the oil-containing environment contains One temperature and one high-temperature oil.

其中,該第一溫度為大於攝氏100度。Wherein, the first temperature is greater than 100 degrees Celsius.

其中,該待加工物之該硬質材料為碳化矽,且該第一加工元件及/或該第二加工元件對該待加工物進行該第一加工程序及/或該第二加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序及/或該第二加熱程序,使得該硬質材料之該硬度暫時性降低至接近矽之硬度。Wherein, when the hard material of the object to be processed is silicon carbide, and the first processing element and/or the second processing element perform the first processing procedure and/or the second processing procedure on the object to be processed, the The heating element simultaneously performs the first heating process and/or the second heating process on the object to be processed, so that the hardness of the hard material is temporarily reduced to a hardness close to that of silicon.

其中,該待加工物為碳化矽錠。Among them, the to-be-processed object is a silicon carbide ingot.

其中,該加熱元件於該第一加熱程序及/或該第二加熱程序係接觸式或非接觸式加熱該待加工物。Wherein, the heating element heats the object to be processed in the first heating process and/or the second heating process in a contact or non-contact manner.

其中,該加熱元件為射頻加熱元件或微波加熱元件。Wherein, the heating element is a radio frequency heating element or a microwave heating element.

承上所述,依本創作之硬質材料加工裝置及其系統,其可具有一或多個下述優點:In summary, the hard material processing device and system created according to the present invention can have one or more of the following advantages:

(1) 藉由對待加工物進行加熱,以降低待加工物中硬質材料的硬度,因此有利於加工元件進行切割、研磨及/或拋光等程序,可以提高加工速度、提升產能,並能減少加工元件的磨耗。(1) By heating the object to be processed, the hardness of the hard material in the object to be processed is reduced, which is beneficial to the process of cutting, grinding and/or polishing the processing element, which can increase the processing speed, increase the production capacity, and reduce the processing Wear of components.

(2) 傳統切割方式在完成後需再進行回火(加熱),以減少應力(stress)。而本創作可不需再次回火,可以減少操作程序及時間成本。(2) The traditional cutting method needs to be tempered (heated) after completion to reduce stress. However, this creation does not need to be tempered again, which can reduce operating procedures and time costs.

(3) 以相同刀具為例,本創作在單位時間的產出量大於傳統技術。(3) Taking the same tool as an example, the output per unit time of this creation is greater than that of traditional technology.

為利瞭解本創作之技術特徵、內容與優點及其所能達成之功效,茲將本創作配合圖式,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本創作實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實施上的權利範圍。此外,為使便於理解,下述實施例中的相同元件係以相同的符號標示來說明。In order to understand the technical features, content and advantages of this creation and its achievable effects, this creation is combined with the diagrams, and detailed descriptions are given in the form of embodiments as follows, and the diagrams used therein have only To illustrate and supplement the manual, it may not be the true proportions and precise configuration after the implementation of this creation. Therefore, the proportion and configuration relationship of the attached drawings should not be interpreted or limited to the scope of rights of the creation in actual implementation. In addition, in order to facilitate understanding, the same elements in the following embodiments are denoted by the same symbols.

另外,在全篇說明書與申請專利範圍所使用的用詞,除有特別註明外,通常具有每個用詞使用在此領域中、在此揭露的內容中與特殊內容中的平常意義。某些用以描述本創作的用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本創作的描述上額外的引導。In addition, the terms used in the entire specification and the scope of the patent application, unless otherwise specified, usually have the usual meaning of each term used in this field, in the content disclosed here, and in the special content. Some terms used to describe this creation will be discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance on the description of this creation.

關於本文中如使用“第一”、“第二”、“第三”等,並非特別指稱次序或順位的意思,亦非用以限定本創作,其僅僅是為了區別以相同技術用語描述的組件或操作而已。Regarding the use of "first", "second", "third", etc. in this article, it does not specifically refer to order or sequence, nor is it used to limit the creation. It is only used to distinguish components described in the same technical terms. Or operation only.

其次,在本文中如使用用詞“包含”、“包括”、“具有”、“含有”等,其均為開放性的用語,即意指包含但不限於。Secondly, if the terms "include", "include", "have", "contain", etc. are used in this article, they are all open terms, which means including but not limited to.

本創作之硬質材料加工裝置,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,加熱元件係對待加工物進行一第一加熱程序,將待加工物加熱至足以降低待加工物之硬質材料之硬度之一第一溫度,藉以於進行第一加熱程序時暫時性降低待加工物之硬質材料之硬度;以及至少一第一加工元件,在加熱元件對待加工物進行第一加熱程序時,第一加工元件係同時對暫時性降低硬質材料之硬度之待加工物進行一第一加工程序。本創作中的硬質材料可例如為碳化矽,本創作中的待加工物可例如為碳化矽錠(SIC Ingot)100,但不限定於此。The hard material processing device of this creation is suitable for an object to be processed containing a hard material, and at least includes: a heating element. The heating element performs a first heating process on the object to be processed to heat the object to be processed enough to reduce the object to be processed A first temperature of the hardness of the hard material, so as to temporarily reduce the hardness of the hard material of the object to be processed during the first heating process; and at least one first processing element, in which the heating element performs the first heating process on the object to be processed At the same time, the first processing element simultaneously performs a first processing procedure on the object to be processed that temporarily reduces the hardness of the hard material. The hard material in this creation can be, for example, silicon carbide, and the object to be processed in this creation can be, for example, a silicon carbide ingot (SIC Ingot) 100, but it is not limited to this.

第一加工元件可例如為線鋸切割機(Wire-saw slicing machine)、研磨機(Grinding machine)或是拋光機(Polishing machine)。第一加工程序則可例如為切割、研磨及/或拋光程序。加熱元件可例如為射頻(Radio Frequency,RF)加熱元件或微波加熱元件,頻率例如為1 KHz至10 GHz。本創作之加熱元件係用以對待加工物進行加熱,故本創作雖以射頻加熱元件或微波加熱元件為例,但本創作並不侷限於上述舉例。換言之,任何加熱元件只要能夠對待加工物進行加熱,均可適用於本創作。如圖1所示,以射頻加熱元件30為例,本創作透過射頻加熱元件30來加熱碳化矽錠100,可以讓碳化矽錠100的硬度降低,因此本創作可以更容易地對碳化矽錠100進行加工處理,例如再藉由線鋸切割機10來將碳化矽錠100切割成碳化矽切片102(第一加工程序),可以更輕易地進行切割程序。其中,碳化矽錠100可例如為圓柱形,但不限定於此。此外,本創作雖較佳為讓碳化矽錠100的硬度降低至接近矽(Si)之硬度,惟只要能夠使得碳化矽錠100的硬度降低,均有助於後續加工程序之進行。舉例而言,當碳化矽錠100被加熱至攝氏200度時,其硬度值仍約為25 GPa,但是當碳化矽錠100被加熱至攝氏350度時,其硬度值已降至約21.5 GPa,且當碳化矽錠100被加熱至攝氏500度時,其硬度值僅剩約15 GPa。同理,若碳化矽錠100被加熱至攝氏600度時,則碳化矽錠100的硬度(14 Gpa)降低至接近或相同於矽的硬度(14 Gpa),因此第一加工元件可採用相同於對矽錠進行加工程序之加工元件,藉以對碳化矽錠100進行第一加工程序。The first processing element can be, for example, a wire-saw slicing machine, a grinding machine, or a polishing machine. The first processing procedure can be, for example, a cutting, grinding and/or polishing procedure. The heating element may be, for example, a radio frequency (RF) heating element or a microwave heating element, and the frequency is, for example, 1 KHz to 10 GHz. The heating element of this creation is used to heat the object to be processed, so although this creation uses radio frequency heating elements or microwave heating elements as examples, this creation is not limited to the above examples. In other words, any heating element can be applied to this creation as long as it can heat the object to be processed. As shown in Figure 1, taking the radio frequency heating element 30 as an example, this creation uses the radio frequency heating element 30 to heat the silicon carbide ingot 100, which can reduce the hardness of the silicon carbide ingot 100. Therefore, this creation can more easily treat the silicon carbide ingot 100. For processing, for example, the silicon carbide ingot 100 is cut into silicon carbide slices 102 by the wire saw cutting machine 10 (the first processing procedure), so that the cutting procedure can be carried out more easily. Among them, the silicon carbide ingot 100 may be cylindrical, but is not limited thereto. In addition, although this creation is preferable to reduce the hardness of the silicon carbide ingot 100 to be close to that of silicon (Si), as long as the hardness of the silicon carbide ingot 100 can be reduced, it is helpful for the subsequent processing procedures. For example, when the silicon carbide ingot 100 is heated to 200 degrees Celsius, its hardness value is still about 25 GPa, but when the silicon carbide ingot 100 is heated to 350 degrees Celsius, its hardness value has dropped to about 21.5 GPa. And when the silicon carbide ingot 100 is heated to 500 degrees Celsius, its hardness value is only about 15 GPa. Similarly, if the silicon carbide ingot 100 is heated to 600 degrees Celsius, the hardness (14 Gpa) of the silicon carbide ingot 100 will be reduced to close to or the same as the hardness of silicon (14 Gpa), so the first processing element can be the same as The processing element that performs the processing procedure on the silicon ingot, whereby the silicon carbide ingot 100 is subjected to the first processing procedure.

另外,第一加工元件也可於含油環境200中對待加工物(即碳化矽錠100)進行第一加工程序,含油環境200係含有可承受第一溫度之一耐高溫油,且係例如為裝填有前述之耐高溫油之槽體。第一溫度為大於攝氏100度,第一溫度較佳介於攝氏200度至900度之間,但不限定於此。如圖2所示,可以將碳化矽錠100部分或全部置放於含油環境200中,較佳為將碳化矽錠100全部浸泡於含油環境200中,並透過射頻加熱元件30來加熱碳化矽錠100,使得碳化矽錠100的硬度降低。其中,射頻加熱元件30可採用市面常見之射頻加熱元件,只要能夠對待加工物進行加熱均適用於本創作,故本創作並不侷限於特定廠牌或型號之射頻加熱元件。接著再藉由線鋸切割機10來將已降低硬度的碳化矽錠100切割成碳化矽切片102(第一加工程序),藉此可以使切割程序能夠更輕易地進行。其中,線鋸切割機10同樣可採用市面常見之線鋸切割機,只要能夠對待加工物進行切割均適用於本創作,故本創作並不侷限於特定廠牌或型號之線鋸切割機。而且,由於切割碳化矽錠100之切割機台屬習知技術且非本創作之技術重點所在,故此處不另贅述。上述含油環境200中可例如含有氟系之油品,其可承受上述加熱元件對待加工物所進行之第一加熱程序,且具有工作溫度範圍大、出色的耐極端高溫性能、耐化學腐蝕性能、寬廣的材料相容性、非凡的電絕緣性能、出色的成膜、承載能力和潤滑性能等特性,用以提供潤滑及均勻加熱的作用。上述之含有氟系之油品例如為氟素油(Per-Fluorinated Poly Ethers,PFPE),其分子結構例如由三種成分組成:碳(Carbon) 21.6%、氧(Oxygen) 9.4%、氟(Fluorine) 69.0%。惟,上述含有氟系之油品雖以氟素油為例且雖以上述成分組成比例為例,惟本創作不限於此,只要含油環境200中的油品可耐高溫,即可適用於本創作中。In addition, the first processing element can also perform the first processing procedure on the object to be processed (ie, the silicon carbide ingot 100) in an oil-containing environment 200. The oil-containing environment 200 contains a high-temperature resistant oil that can withstand the first temperature, and is, for example, filling The tank body with the aforementioned high temperature oil resistant. The first temperature is greater than 100 degrees Celsius, and the first temperature is preferably between 200 degrees Celsius and 900 degrees Celsius, but is not limited thereto. As shown in Figure 2, the silicon carbide ingot 100 can be partially or completely placed in an oil-containing environment 200. Preferably, the silicon carbide ingot 100 is completely immersed in the oil-containing environment 200, and the silicon carbide ingot is heated by the radio frequency heating element 30 100, which reduces the hardness of the silicon carbide ingot 100. Among them, the radio frequency heating element 30 can be a common radio frequency heating element in the market, as long as it can heat the workpiece to be processed, it is suitable for this creation, so this creation is not limited to a specific brand or model of radio frequency heating element. Then, the wire saw cutting machine 10 is used to cut the reduced hardness of the silicon carbide ingot 100 into silicon carbide slices 102 (the first processing procedure), so that the cutting procedure can be carried out more easily. Among them, the wire saw cutting machine 10 can also be a common wire saw cutting machine in the market. As long as it can cut the workpiece to be processed, it is suitable for this creation, so this creation is not limited to a wire saw cutting machine of a specific brand or model. Moreover, since the cutting machine table for cutting the silicon carbide ingot 100 is a conventional technology and is not the technical focus of this creation, it will not be repeated here. The oil-containing environment 200 may, for example, contain fluorine-based oils, which can withstand the first heating process performed by the heating element to be processed, and have a large operating temperature range, excellent extreme high temperature resistance, chemical corrosion resistance, Broad material compatibility, extraordinary electrical insulation properties, excellent film formation, load-bearing capacity and lubricating properties are used to provide lubrication and uniform heating. The above-mentioned fluorine-containing oil is, for example, Per-Fluorinated Poly Ethers (PFPE), and its molecular structure is, for example, composed of three components: Carbon (Carbon) 21.6%, Oxygen (Oxygen) 9.4%, Fluorine (Fluorine) 69.0 %. However, although the above-mentioned fluorine-containing oil products are fluorine-based oils and the above-mentioned composition ratios are used as examples, this creation is not limited to this, as long as the oil products in the oil-containing environment 200 can withstand high temperatures, it can be applied to this creation middle.

第一加工程序除了前述的切割程序外,也可以是研磨及/或拋光程序。易言之,本創作不侷限於先進行切割程序之後,再接續進行研磨及/或拋光程序。依據實際製程需求,本創作也可以不對待加工物進行切割程序,而是只進行研磨及/或拋光程序。如同前述之理由,本創作之研磨及/或拋光程序也可採用市面常見之研磨機及/或拋光機,例如化學機械研磨機(CMP),只要能夠對待加工物進行研磨及/或拋光均適用於本創作,故本創作並不侷限於特定廠牌或型號之研磨機及/或拋光機。而且,由於研磨及/或拋光碳化矽錠100之研磨及/或拋光機台屬習知技術且非本創作之技術重點所在,故此處不另贅述。舉例來說,如圖3所示,可以將圖1的切割程序後所得之碳化矽切片102,置於承載件40上。承載件40可例如是具有孔洞的陶瓷板,因此可以透過抽氣裝置50(例如抽氣幫浦),來將碳化矽切片102固定在承載件40上,以便進行後續的研磨及/或拋光程序。並且,透過射頻加熱元件30來加熱碳化矽切片102,可以讓碳化矽切片102的硬度降低,因此有利於研磨拋光機20來對碳化矽切片102進行研磨及/或拋光程序。圖3中的射頻加熱元件30以置於承載件40下方為例,但不限定於此。射頻加熱元件30也可以設置於其他適當之位置,以便於對碳化矽切片102進行加熱以降低其硬度。另外,在進行研磨及/或拋光程序時,也可使用潤滑劑60。潤滑劑60可例如為任何含有氟系之油品,用以提供潤滑及均勻加熱的作用。In addition to the aforementioned cutting procedure, the first processing procedure may also be a grinding and/or polishing procedure. In other words, this creation is not limited to the cutting process first, followed by the grinding and/or polishing process. According to the actual process requirements, this creation may not perform the cutting process on the object to be processed, but only perform the grinding and/or polishing process. For the reasons mentioned above, the grinding and/or polishing procedure of this creation can also use common grinders and/or polishing machines on the market, such as chemical mechanical grinders (CMP), as long as they can grind and/or polish the processed objects. In this creation, this creation is not limited to specific brands or models of grinders and/or polishers. Moreover, since the grinding and/or polishing machine for grinding and/or polishing the silicon carbide ingot 100 is a conventional technology and is not the technical focus of this creation, it will not be repeated here. For example, as shown in FIG. 3, the silicon carbide slice 102 obtained after the cutting process of FIG. 1 can be placed on the carrier 40. The carrier 40 may be, for example, a ceramic plate with holes, so the silicon carbide slice 102 can be fixed on the carrier 40 through an air extraction device 50 (for example, an air pump) for subsequent grinding and/or polishing procedures . In addition, heating the silicon carbide slice 102 through the radio frequency heating element 30 can reduce the hardness of the silicon carbide slice 102, which is advantageous for the grinding and polishing machine 20 to perform a grinding and/or polishing process on the silicon carbide slice 102. The radio frequency heating element 30 in FIG. 3 is placed under the carrier 40 as an example, but it is not limited thereto. The radio frequency heating element 30 can also be arranged at other suitable positions, so as to heat the silicon carbide slice 102 to reduce its hardness. In addition, the lubricant 60 may also be used during grinding and/or polishing procedures. The lubricant 60 can be, for example, any fluorine-containing oil to provide lubrication and uniform heating.

另外,如圖4所示,本創作也可以於含油環境200中對碳化矽切片102進行研磨及/或拋光程序。含油環境200係含有可承受第一溫度之一耐高溫油。第一溫度為大於攝氏100度,第一溫度較佳介於攝氏200度至900度之間,但不限定於此。舉例而言,本創作可將碳化矽切片102部分或全部置放於含油環境200中,較佳為將碳化矽切片102全部浸泡於含油環境200中,並透過射頻加熱元件30來加熱碳化矽切片102,使得碳化矽切片102的硬度降低。接著再藉由研磨拋光機20來對已降低硬度的碳化矽切片102進行研磨及/或拋光程序。如同前述,碳化矽切片102的硬度降低幅度並無特別限定。惟,若碳化矽切片102的硬度降低至接近或相同於矽的硬度,則本創作之研磨拋光機20可為相同於對矽片進行研磨及/或拋光程序之研磨及/或拋光機。圖4中的射頻加熱元件30以置於含油環境200外為例,但不限定於此。射頻加熱元件30也可以設置於其他適當之位置,以便於對碳化矽切片102進行加熱以降低其硬度。In addition, as shown in FIG. 4, the present invention can also perform grinding and/or polishing procedures on the silicon carbide slice 102 in an oil-containing environment 200. The oil-containing environment 200 contains a high temperature resistant oil that can withstand the first temperature. The first temperature is greater than 100 degrees Celsius, and the first temperature is preferably between 200 degrees Celsius and 900 degrees Celsius, but is not limited thereto. For example, in this creation, part or all of the silicon carbide slices 102 can be placed in an oily environment 200. Preferably, the silicon carbide slices 102 are completely immersed in the oily environment 200, and the silicon carbide slices are heated by the radio frequency heating element 30. 102, so that the hardness of the silicon carbide slice 102 is reduced. Then, the grinding and polishing machine 20 is used to perform grinding and/or polishing processes on the silicon carbide slice 102 whose hardness has been reduced. As mentioned above, the reduction range of the hardness of the silicon carbide chip 102 is not particularly limited. However, if the hardness of the silicon carbide slice 102 is reduced to be close to or the same as the hardness of silicon, the grinding and polishing machine 20 of the present invention can be the same as the grinding and/or polishing machine that performs the grinding and/or polishing process on the silicon wafer. The radio frequency heating element 30 in FIG. 4 is placed outside the oil-containing environment 200 as an example, but it is not limited thereto. The radio frequency heating element 30 can also be arranged at other suitable positions, so as to heat the silicon carbide slice 102 to reduce its hardness.

在本創作中,加熱元件於第一加熱程序可以是接觸式或非接觸式加熱待加工物。舉例來說,射頻加熱元件30在對碳化矽錠100或是碳化矽切片102進行加熱時,可以是透過直接接觸碳化矽錠100或碳化矽切片102來進行加熱,或者是透過間接方式,例如透過含油環境200來對碳化矽錠100或碳化矽切片102進行加熱。由於本創作所屬技術領域中具有通常知識者依據本創作之揭示內容,應當可清楚得知如何將射頻加熱元件30擺置於含油環境200的外部或內部,且可清楚得知如何透過直接接觸或間接方式對碳化矽錠100或碳化矽切片102進行加熱,故此處不再贅述。In this creation, the heating element in the first heating process can be contact or non-contact heating of the object to be processed. For example, when the radio frequency heating element 30 heats the silicon carbide ingot 100 or the silicon carbide slice 102, it can be heated by directly contacting the silicon carbide ingot 100 or the silicon carbide slice 102, or by indirect means, such as The oily environment 200 is used to heat the silicon carbide ingot 100 or the silicon carbide chip 102. Since those with ordinary knowledge in the technical field to which this creation belongs should be able to clearly know how to place the radio frequency heating element 30 outside or inside the oil-containing environment 200, and can clearly know how to use direct contact or The silicon carbide ingot 100 or the silicon carbide slice 102 is heated in an indirect manner, so it will not be repeated here.

本創作另提出一種硬質材料加工系統,其係例如由多個前述之硬質材料加工裝置組成以分別進行多個前述之加工程序,或者由單一個前述之硬質材料加工裝置組成以分別進行多個前述之加工程序。本創作之硬質材料加工系統適用於加工處理含有硬質材料之一待加工物,至少包含:一加熱元件,加熱元件係對待加工物進行一第一加熱程序及一第二加熱程序,將待加工物加熱至足以降低待加工物之硬質材料之硬度之一第一溫度,藉以於進行第一加熱程序及第二加熱程序時暫時性降低待加工物之硬質材料之硬度;至少一第一加工元件,在加熱元件對待加工物進行第一加熱程序時,第一加工元件係同時對暫時性降低硬質材料之硬度之待加工物進行一第一加工程序;以及至少一第二加工元件,在加熱元件對待加工物進行第二加熱程序時,第二加工元件係同時對已經過第一加工程序且暫時性降低硬質材料之硬度之待加工物進行一第二加工程序。其中,第一加工程序可例如為切割程序,且可透過如前述線鋸切割機10來進行切割程序。而第二加工程序可例如為研磨及/或拋光程序,且可透過如前述研磨拋光機20來進行研磨及/或拋光程序。This creation also proposes a hard material processing system, which is composed of, for example, a plurality of the aforementioned hard material processing devices to perform a plurality of the aforementioned processing procedures, or a single aforementioned hard material processing device to perform multiple of the aforementioned processing procedures. The processing procedure. The hard material processing system of this creation is suitable for processing a to-be-processed object containing a hard material, and at least includes: a heating element. The heating element performs a first heating process and a second heating process on the to-be-processed object. Heating to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, so as to temporarily reduce the hardness of the hard material of the object to be processed during the first heating process and the second heating process; at least one first processing element, When the heating element performs the first heating procedure on the object to be processed, the first processing element simultaneously performs a first processing procedure on the object to be processed that temporarily reduces the hardness of the hard material; When the processed object is subjected to the second heating procedure, the second processing element simultaneously performs a second processing procedure on the to-be-processed object that has passed the first processing procedure and temporarily reduces the hardness of the hard material. The first processing procedure can be, for example, a cutting procedure, and the cutting procedure can be performed by the wire saw cutting machine 10 as described above. The second processing procedure can be, for example, a grinding and/or polishing procedure, and the grinding and/or polishing procedure can be performed by the aforementioned grinding and polishing machine 20.

第一加熱程序及第二加熱程序,可以由同一加熱元件,或不同的加熱元件所進行。舉例來說,可以使用射頻加熱元件30來進行第一加熱程序及第二加熱程序。另外,射頻加熱元件30可以置於一固定空間(例如前述的含油環境200)的內部或外部,且在此含油環境200中可以先進行切割程序且接著進行研磨及/或拋光程序。或者,兩射頻加熱元件30可以分別置於不同的位置,因此在進行切割程序先由其中一射頻加熱元件30進行加熱,並在完成切割程序後,可移送至另一位置(在移送過程中可選擇性地進行清潔程序),以使用另一射頻加熱元件30來進行加熱。前述的射頻加熱元件30也可以視實際需求,以微波加熱元件作替換使用。The first heating program and the second heating program can be performed by the same heating element or different heating elements. For example, the radio frequency heating element 30 can be used to perform the first heating process and the second heating process. In addition, the radio frequency heating element 30 may be placed inside or outside a fixed space (such as the aforementioned oil-containing environment 200), and in this oil-containing environment 200, a cutting process may be performed first, followed by a grinding and/or polishing process. Alternatively, the two radio frequency heating elements 30 can be placed in different positions. Therefore, one of the radio frequency heating elements 30 is heated before the cutting process is performed, and after the cutting process is completed, it can be moved to another position (it can be moved during the transfer process). Optionally perform a cleaning procedure) to use another radio frequency heating element 30 for heating. The aforementioned radio frequency heating element 30 can also be replaced with a microwave heating element according to actual needs.

另外,本創作之硬質材料加工系統,更可以包含至少一清潔元件(圖中未繪示),在待加工物經過第一加工程序及/或第二加工程序之後,清潔元件係對待加工物進行一清潔程序。如圖5所示,在進行切割程序S10後,可以使用清潔元件對待加工物進行清潔程序S21,隨後進行研磨程序S30及清潔程序S22,接著再進行拋光程序S40及清潔程序S23。切割程序S10可採用圖1或圖2的方式來進行,但不限定於此。而研磨程序S30及拋光程序S40可採用圖3或圖4的方式來進行,且同樣不限定於此。透過進行清潔程序,可以將前次程序殘留於待加工物上的物質清洗乾淨,以便進行次一程序。其中,清潔程序中可使用電漿來進行清洗,或者也可使用一般去油酯的有機溶劑,例如丙酮,來進行清潔程序。本創作之清潔程序係用以對待加工物進行清潔,故本創作雖以電漿或有機溶劑為例,但本創作並不侷限於上述舉例。換言之,任何清潔程序只要能夠對待加工物進行清潔,均可適用於本創作。而且,本創作所屬技術領域中具有通常知識者依據本創作之揭示內容,應當可清楚得知如何對待加工物進行清潔,故此處不再贅述。In addition, the hard material processing system of this invention may further include at least one cleaning element (not shown in the figure). After the object to be processed passes through the first processing procedure and/or the second processing procedure, the cleaning element is used for the processing of the object to be processed. A cleaning program. As shown in FIG. 5, after the cutting process S10 is performed, the cleaning element can be used to perform a cleaning process S21 on the object to be processed, followed by a grinding process S30 and a cleaning process S22, and then a polishing process S40 and a cleaning process S23. The cutting procedure S10 can be performed in the manner shown in FIG. 1 or FIG. 2, but is not limited to this. The grinding process S30 and the polishing process S40 can be performed in the manner shown in FIG. 3 or FIG. 4, and are not limited thereto. By carrying out the cleaning procedure, the substances remaining on the object to be processed in the previous procedure can be cleaned, so that the next procedure can be carried out. Among them, in the cleaning process, plasma can be used for cleaning, or a general degreasing ester organic solvent, such as acetone, can also be used for cleaning. The cleaning procedure of this creation is used to clean the processed objects, so although this creation uses plasma or organic solvents as examples, this creation is not limited to the above examples. In other words, any cleaning procedure can be applied to this creation as long as it can clean the processed objects. Moreover, those with ordinary knowledge in the technical field to which this creation belongs should be able to clearly know how to clean the processed objects based on the disclosure content of this creation, so we will not repeat them here.

綜上所述,本創作之硬質材料加工裝置及其系統,其可具有一或多個下述優點:(1) 藉由對待加工物進行加熱,以降低待加工物中硬質材料的硬度,因此有利於加工元件進行切割、研磨及/或拋光等程序,可以提高加工速度、提升產能,並能減少加工元件的磨耗。(2) 傳統切割方式在完成後需再進行回火(加熱),以減少應力(stress)。而本創作可不需再次回火,可以減少操作程序及時間成本。(3) 以相同刀具為例,本創作在單位時間的產出量大於傳統技術。In summary, the hard material processing device and system of this invention can have one or more of the following advantages: (1) By heating the object to be processed, the hardness of the hard material in the object is reduced, so It is conducive to the cutting, grinding and/or polishing of the processing components, which can increase the processing speed, increase the productivity, and reduce the wear of the processing components. (2) The traditional cutting method needs to be tempered (heated) after completion to reduce stress. However, this creation does not need to be tempered again, which can reduce operating procedures and time costs. (3) Taking the same tool as an example, the output per unit time of this creation is greater than that of traditional technology.

以上所述僅為舉例性,而非為限制性者。任何未脫離本創作之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above descriptions are merely illustrative and not restrictive. Any equivalent modifications or changes that do not depart from the spirit and scope of this creation should be included in the scope of the attached patent application.

10:線鋸切割機 20:研磨拋光機 30:射頻加熱元件 40:承載件 50:抽氣裝置 60:潤滑劑 100:碳化矽錠 102:碳化矽切片 200:含油環境 S10:切割程序 S21、S22、S23:清潔程序 S30:研磨程序 S40:拋光程序10: Wire saw cutting machine 20: Grinding and polishing machine 30: RF heating element 40: Carrier 50: Exhaust device 60: Lubricant 100: Silicon carbide ingot 102: Silicon carbide slice 200: oily environment S10: Cutting program S21, S22, S23: cleaning program S30: Grinding procedure S40: Polishing procedure

圖1為本創作之硬質材料加工裝置之第一實施例之示意圖。Figure 1 is a schematic diagram of the first embodiment of the hard material processing device created.

圖2為本創作之硬質材料加工裝置之第二實施例之示意圖。Figure 2 is a schematic diagram of the second embodiment of the hard material processing device created.

圖3為本創作之硬質材料加工裝置之第三實施例之示意圖。Figure 3 is a schematic diagram of the third embodiment of the hard material processing device created.

圖4為本創作之硬質材料加工裝置之第四實施例之示意圖。Figure 4 is a schematic diagram of the fourth embodiment of the hard material processing device created.

圖5為本創作之硬質材料加工系統之加工流程圖。Figure 5 is the processing flow chart of the hard material processing system created.

10:線鋸切割機 10: Wire saw cutting machine

30:射頻加熱元件 30: RF heating element

100:碳化矽錠 100: Silicon carbide ingot

200:含油環境 200: oily environment

Claims (17)

一種硬質材料加工裝置,適用於含有硬質材料之一待加工物,至少包含: 一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,藉以於進行該第一加熱程序時暫時性降低該待加工物之該硬質材料之該硬度;以及 至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序。 A hard material processing device, suitable for a to-be-processed object containing hard materials, at least including: A heating element that performs a first heating procedure on the object to be processed, and heats the object to be processed to a first temperature that is sufficient to reduce the hardness of the hard material of the object to be processed, thereby performing the second Temporarily reduce the hardness of the hard material of the object to be processed during a heating process; and At least one first processing element, when the heating element performs the first heating procedure on the object to be processed, the first processing element simultaneously performs a first process on the object to be processed that temporarily reduces the hardness of the hard material Processing program. 如請求項1所述之硬質材料加工裝置,其中該第一加工程序為切割、研磨及/或拋光程序。The hard material processing device according to claim 1, wherein the first processing procedure is a cutting, grinding and/or polishing procedure. 如請求項1所述之硬質材料加工裝置,其中該第一加工元件係於一含油環境中對該待加工物進行該第一加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。The hard material processing device according to claim 1, wherein the first processing element performs the first processing procedure on the object to be processed in an oil-containing environment, and the oil-containing environment contains a resistance that can withstand the first temperature. High temperature oil. 如請求項1所述之硬質材料加工裝置,其中該第一溫度為大於攝氏100度。The hard material processing device according to claim 1, wherein the first temperature is greater than 100 degrees Celsius. 如請求項1、2、3或4所述之硬質材料加工裝置,其中該待加工物之該硬質材料為碳化矽,且該第一加工元件對該待加工物進行該第一加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序,使得該硬質材料之該硬度暫時性降低至接近矽之硬度。The hard material processing device of claim 1, 2, 3, or 4, wherein the hard material of the object to be processed is silicon carbide, and when the first processing element performs the first processing procedure on the object to be processed, The heating element simultaneously performs the first heating process on the object to be processed, so that the hardness of the hard material is temporarily reduced to close to the hardness of silicon. 如請求項5所述之硬質材料加工裝置,其中該待加工物為碳化矽錠。The hard material processing device according to claim 5, wherein the object to be processed is a silicon carbide ingot. 如請求項1所述之硬質材料加工裝置,其中該加熱元件於該第一加熱程序係接觸式或非接觸式加熱該待加工物。The hard material processing device according to claim 1, wherein the heating element heats the object to be processed in a contact type or a non-contact type in the first heating process. 如請求項1所述之硬質材料加工裝置,其中該加熱元件為射頻加熱元件或微波加熱元件。The hard material processing device according to claim 1, wherein the heating element is a radio frequency heating element or a microwave heating element. 一種硬質材料加工系統,適用於含有硬質材料之一待加工物,至少包含: 一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序及一第二加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,藉以於進行該第一加熱程序及該第二加熱程序時暫時性降低該待加工物之該硬質材料之該硬度; 至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序;以及 至少一第二加工元件,在該加熱元件對該待加工物進行該第二加熱程序時,該第二加工元件係同時對已經過該第一加工程序且暫時性降低該硬質材料之該硬度之該待加工物進行一第二加工程序。 A hard material processing system, suitable for a to-be-processed object containing hard materials, at least including: A heating element that performs a first heating process and a second heating process on the object to be processed, and heats the object to be processed to a first temperature that is sufficient to reduce the hardness of the hard material of the object to be processed , So as to temporarily reduce the hardness of the hard material of the object to be processed during the first heating process and the second heating process; At least one first processing element, when the heating element performs the first heating procedure on the object to be processed, the first processing element simultaneously performs a first process on the object to be processed that temporarily reduces the hardness of the hard material Processing procedures; and At least one second processing element, when the heating element performs the second heating procedure on the object to be processed, the second processing element simultaneously treats the material that has passed the first processing procedure and temporarily reduces the hardness of the hard material The object to be processed is subjected to a second processing procedure. 如請求項9所述之硬質材料加工系統,更包含至少一清潔元件,在該待加工物經過該第一加工程序及/或該第二加工程序之後,該清潔元件係對該待加工物進行一清潔程序。The hard material processing system according to claim 9, further comprising at least one cleaning element. After the object to be processed passes through the first processing procedure and/or the second processing procedure, the cleaning element performs processing on the object to be processed A cleaning program. 如請求項9所述之硬質材料加工系統,其中該第一加工程序為切割程序,該第二加工程序為研磨及/或拋光程序。The hard material processing system according to claim 9, wherein the first processing procedure is a cutting procedure, and the second processing procedure is a grinding and/or polishing procedure. 如請求項9所述之硬質材料加工系統,其中該第一加工元件及/或該第二加工元件係於一含油環境中對該待加工物進行該第一加工程序及/或該第二加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。The hard material processing system according to claim 9, wherein the first processing element and/or the second processing element perform the first processing procedure and/or the second processing on the object to be processed in an oil-containing environment Procedure, the oil-containing environment contains a high temperature resistant oil that can withstand the first temperature. 如請求項9所述之硬質材料加工系統,其中該第一溫度為大於攝氏100度。The hard material processing system according to claim 9, wherein the first temperature is greater than 100 degrees Celsius. 如請求項9、10、11、12或13所述之硬質材料加工系統,其中該待加工物之該硬質材料為碳化矽,且該第一加工元件及/或該第二加工元件對該待加工物進行該第一加工程序及/或該第二加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序及/或該第二加熱程序,使得該硬質材料之該硬度暫時性降低至接近矽之硬度。The hard material processing system according to claim 9, 10, 11, 12 or 13, wherein the hard material of the object to be processed is silicon carbide, and the first processing element and/or the second processing element are When the workpiece is subjected to the first processing procedure and/or the second processing procedure, the heating element simultaneously performs the first heating procedure and/or the second heating procedure on the workpiece to make the hardness of the hard material Temporarily reduce to the hardness of silicon. 如請求項14所述之硬質材料加工系統,其中該待加工物為碳化矽錠。The hard material processing system according to claim 14, wherein the object to be processed is a silicon carbide ingot. 如請求項9所述之硬質材料加工系統,其中該加熱元件於該第一加熱程序及/或該第二加熱程序係接觸式或非接觸式加熱該待加工物。The hard material processing system according to claim 9, wherein the heating element heats the object to be processed in the first heating process and/or the second heating process in a contact or non-contact manner. 如請求項9所述之硬質材料加工系統,其中該加熱元件為射頻加熱元件或微波加熱元件。The hard material processing system according to claim 9, wherein the heating element is a radio frequency heating element or a microwave heating element.
TW110205916U 2021-05-14 2021-05-24 Hard material processing device and system thereof TWM618520U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021002936U JP3234377U (en) 2021-05-14 2021-07-29 Hard material processing equipment and its system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163188478P 2021-05-14 2021-05-14
US63/188,478 2021-05-14

Publications (1)

Publication Number Publication Date
TWM618520U true TWM618520U (en) 2021-10-21

Family

ID=79603695

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110205916U TWM618520U (en) 2021-05-14 2021-05-24 Hard material processing device and system thereof
TW110118632A TWI813999B (en) 2021-05-14 2021-05-24 Hard material processing device and system thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110118632A TWI813999B (en) 2021-05-14 2021-05-24 Hard material processing device and system thereof

Country Status (2)

Country Link
CN (1) CN115338995A (en)
TW (2) TWM618520U (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4904506B2 (en) * 2005-07-07 2012-03-28 国立大学法人 熊本大学 Substrate, polishing method thereof, and polishing apparatus
JP5599547B2 (en) * 2006-12-01 2014-10-01 Mipox株式会社 Hard crystal substrate polishing method and oil-based polishing slurry
JP2017105697A (en) * 2015-11-26 2017-06-15 東洋炭素株式会社 PRODUCTION METHOD OF THIN SiC WAFER, AND THIN SiC WAFER

Also Published As

Publication number Publication date
TWI813999B (en) 2023-09-01
CN115338995A (en) 2022-11-15
TW202245034A (en) 2022-11-16

Similar Documents

Publication Publication Date Title
CN101246836B (en) Substrate carrying platform and process method for its surface
CN103578960B (en) A kind of method preparing Ohmic contact in surface on back side of SiC substrate
JP7241434B2 (en) Grinding method for large single crystal diamond
CN103495928B (en) A kind of processing method improving Sapphire Substrate sheet surface quality and product yield
CN203726355U (en) Grinding wheel for chamfering edge of large-diameter silicon carbide wafer
TWM618520U (en) Hard material processing device and system thereof
CN216804014U (en) Hard material processing device and system thereof
JP3234377U (en) Hard material processing equipment and its system
JP7198881B2 (en) Hard material processing system
JP2016127051A (en) Side face processing method of silicon carbide single crystal ingot
CN112008501A (en) Method for improving aluminum nitride ceramic grinding surface flatness
CN105576094A (en) LED epitaxial wafer processing technology
CN207373405U (en) A kind of plaster mechanism of ceramic disk processing
JP2013169610A (en) High hardness material working method and working device
Jianxiu et al. Study on lapping paste of 6H–SiC single-crystal substrate in tribochemical mechanical lapping
CN113223932A (en) Wafer drying method
CN103029032B (en) Sintered polycrystalline diamond cold plate cooling high-speed grinding device
CN104582024A (en) Heating tube for subsection cooling, and using method thereof
CN110253147A (en) A kind of laser assisted hydration processing polished method
Ma et al. The effect of a rotating heat pipe in a brazed diamond grinding wheel on grinding temperature
CN104505338B (en) Pre-cleaning method before a kind of silicon carbide wafer extension
CN211734534U (en) Silicon material growth furnace with bottom heat insulation strip
Zhang et al. Modeling analysis of temperatures at points in oxide film of grinding wheels
CN110349867A (en) A kind of wax method under the wafer of application surface rough type ceramic disk
TWM503652U (en) Spiral structure of wafer grinding polishing disc