CN110349867A - A kind of wax method under the wafer of application surface rough type ceramic disk - Google Patents
A kind of wax method under the wafer of application surface rough type ceramic disk Download PDFInfo
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- CN110349867A CN110349867A CN201910598991.0A CN201910598991A CN110349867A CN 110349867 A CN110349867 A CN 110349867A CN 201910598991 A CN201910598991 A CN 201910598991A CN 110349867 A CN110349867 A CN 110349867A
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- wafer
- wax
- ceramic disk
- disk
- impeller
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Wax method under the wafer of the present invention two kinds of application surface rough type ceramic disks of offer, it is to wax in 0.3 ceramic disk in surface roughness that both of which, which is first by wafer, to ceramic disk edge clean after the completion of waxing, later, first method is heated 10 minutes to ceramic disk, then push directly on wax under wafer, second method is to heat 10 minutes extremely can slightly push wafer to ceramic disk, be subsequently placed with heating water bath go in wax liquor to impregnate after lower wax, the lower wax method of of the invention two kinds is suitable for wax under the wafer of little specification size, equally surface roughness is used as 0.3 ceramic disk wafer carrier the most, relative to common mirror face ceramics disk, the wax liquor melted after heating is easier to penetrate into the space between wafer and ceramic disk, energy effectively lubricating simultaneously reduces wafer promotion resistance, lower wax is more convenient to be produced Raw surface scratches of wafer and fragmentation have the case where crackle, have good promotion prospect.
Description
Method field
The present invention relates to semiconductor wafer processing method fields, more particularly, to a kind of application surface rough type ceramic disk
Wax method under wafer.
Background method
Semicon industry wafer pastes in ceroplastic, need to be existing by heating, waxing three patch, lower wax steps before patch wax
Paste in ceroplastic and be used as silicon wafer carrier frequently with mirror face ceramics disk, when lower wax using push or impregnate remove by the way of wax it is thinned
Wafer afterwards, but the wafer after being often thinned has that promotion resistance is larger on mirror face ceramics disk, especially thickness mistake
Thin or in the case that wafer is excessive, the promotion resistance that can make steeply rises, and when leading to the wax under push jack, causes damage broken wafer
The phenomenon that broken or surface scratching, wafer yield are reduced, and greatly reduce production efficiency.
Summary of the invention
It is an object of the invention to overcome the shortcomings of above-mentioned existing method.
In order to overcome the shortcomings of existing methods, the present invention provides wax side under the wafer of application surface rough type ceramic disk a kind of
Method, the lower wax method the following steps are included:
1) ceramic disk is provided, the ceramic disk is used for wafer Wax enhancement, and the ceramic disk surface roughness is 0.3；
2) after the completion of wafer waxing grinding, the ceramic plate edge is cleaned；
3) ceramic disk is heated, melts wax, waxed while wax melts toward crystal round fringes surrounding；
4) heating is carried out 10 minutes to the ceramic disk and pushes the area Xia La to wax the wafer of the ceramic disk；
5) impeller is provided, wafer is gently pushed to lower wax using the impeller from the area Xia La.
The ceramic disk in the step 3) is heated to 80 DEG C.
The impeller in the step 5) is swab stick.
In order to overcome the shortcomings of existing methods, the present invention provides wax side under the wafer of application surface rough type ceramic disk a kind of
Method, the lower wax method the following steps are included:
1) ceramic disk is provided, the ceramic disk is used for wafer Wax enhancement, and the ceramic disk surface roughness is 0.3；
2) after the completion of wafer waxing grinding, the ceramic plate edge is cleaned；
3) ceramic disk is heated, melts wax；
4) impeller is provided, is heated after ten minutes in the ceramic disk, gently pushes wafer, energy using the impeller
Promotion can carry out next step；
5) ceramic disk is placed in the going in wax liquor of heating water bath, downward by backside of wafer, places one under wafer
Culture dish catches wafer after being detached to wax under wafer；
6) ceramic disk is taken out every half an hour and gently push wafer using the impeller, remove crystalline substance if easily pushing
Lower wax process can be completed in circle, continues to impregnate if it can not push and repeat above operation, will appear wafer in soaking process
Directly fall off the case where lower wax process is completed in culture dish.
The ceramic disk in the step 3) is heated to 80 DEG C.
The impeller in the step 4) and step 7) is swab stick.
Water bath heating temperature in the step 5) is 80 DEG C.
The beneficial effects of the present invention are: using different lower wax methods to different size of wafer thin slice, application surface is thick
The ceramic disk that rugosity is 0.3 is as silicon wafer carrier, and relative to common mirror face ceramics disk, the wax liquor melted after heating is easier to seep
Thoroughly to space between wafer and ceramic disk, can effectively lubricating, reduce wafer and push resistance, make under wafer thin slice wax more just
Victory, while the presence of wax layer make crystal column surface generation will not be scratched and be caused the wafer generation after being thinned broken during lower wax
It splits, have the case where crackle, simplify lower ceroplastic process and have good production effect.
Specific embodiment
Below by specific embodiment, the invention will be further described:
The present embodiment provides wax methods under the wafer of two kinds of application surface rough type ceramic disks.
The first lower wax method is suitable for wax under the wafer thin slice of the ultra-thin InP-base of 80um comprising following steps:
1) ceramic disk is provided, ceramic disk is used for wafer Wax enhancement, and ceramic disk surface roughness is 0.3；
2) after the completion of wafer waxing grinding, ceramic plate edge is cleaned, prevents abrasive flour residual from causing to device
It scratches；
3) ceramic disk is heated, melts wax, wax melt while toward crystal round fringes surrounding wax, thawing it is same
When wax toward crystal round fringes surrounding, wax layer is very few generates resistance to lower wax under wafer after preventing wax liquor from shrinking；
4) heating is carried out 10 minutes to ceramic disk and pushes the area Xia La to wax the wafer of the ceramic disk, make wafer
There is wax layer as lubricant layer on pushing running route, reduces and push lower wax resistance；
5) impeller is provided, wafer is gently pushed to lower wax using impeller from the area Xia La.
Second of lower wax method is suitable for wax under the wafer thin slice of tri- cun of InP-bases of 150um comprising following steps:
1) ceramic disk is provided, ceramic disk is used for wafer Wax enhancement, and ceramic disk surface roughness is 0.3；
2) after the completion of wafer waxing grinding, carrying out cleaning to ceramic plate edge prevents abrasive flour residual from causing to draw to device
Wound,；
3) ceramic disk is heated, melts wax, waxed while thawing toward crystal round fringes surrounding, prevent wax liquor from shrinking
Wax layer is very few under wafer afterwards generates resistance to lower wax；
4) impeller is provided, is heated after ten minutes in the ceramic disk, is gently pushed wafer using impeller, can push
It can carry out next step；
5) ceramic disk is placed in the going in wax liquor of heating water bath, downward by backside of wafer, a culture is placed under wafer
Ware catches wafer after being detached to wax under wafer；
6) take out ceramic disk every half an hour and using impeller gently push wafer, if easily push remove wafer can be complete
At lower wax process, continue to impregnate if it can not push and repeat above operation, will appear wafer in soaking process and directly fall off
The case where lower wax process is completed in culture dish.
In above-mentioned two embodiment, the wafer thin slice of the wafer thin slice InP-base ultra-thin ratio 80um of tri- cun of InP-bases of 150um is straight
Diameter is bigger, pushes the resistance of wax under wafer thin slice also bigger, and wafer thin slice generates fragmentation, cracked risk also more greatly, because
This uses the lower wax of the wafer thin slice of tri- cun of InP-bases of 150um and impregnates lower wax method after many experiments, super to 80um
The lower wax of the wafer thin slice of thin InP-base, which uses, pushes wax method, and in above-mentioned two lower wax methods, being all made of surface roughness is
The waxing carrier of 0.3 ceramic disk wafer the most, since its surface is relatively rough, melts compared to common mirror face ceramics disk
Wax oil afterwards, the space being easily accessible between wafer and ceramic disk form slim lubricant layer, are greatly lowered wax under wafer in this way
When promotion resistance, realize the ultra-thin InP-base of 80um wafer thin slice can push directly on lower wax, the wafer of tri- cun of InP-bases of 150um is thin
The wax time is also greatly reduced under the immersion of piece, improves production efficiency, and lower wax will not generate crystal column surface while convenient
It scratches and causes the wafer after being thinned to generate fragmentation, have the case where crackle, reduce production cost, there is the prospect of utilization and extention.
Ceramic disk in the step 3) of the first lower wax method, the step 3) of second lower wax method is heated to 80 DEG C, and 80
DEG C be solid industrial wax fusing point, at this temperature, the good fluidity of wax oil, be conducive to waxing, wax liquor infiltration etc..
The step 5) of the first lower wax method, the step 4) of second lower wax method and the impeller in step 7) are cotton
Stick, swab stick is soft, for pushing wafer thin slice, scuffing will not be generated to it, and the motive force of swab stick is limited, is unlikely to too
Enforcing wafer thin slice leads to its broken, cracking.
Water bath heating temperature in the step 5) of second of lower wax method is 80 DEG C, 80 DEG C of fusing points for solid industrial wax,
At this temperature, the good fluidity of wax oil, conducive to going wax to separate wafer.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing the method all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, has usually intellectual complete without departing from disclosed spirit and institute under method and thought such as in accompanying method field
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (7)
1. a kind of wax method under wafer of application surface rough type ceramic disk, it is characterised in that: the lower wax method includes following
Step:
1) ceramic disk is provided, the ceramic disk is used for wafer Wax enhancement, and the ceramic disk surface roughness is 0.3；
2) after the completion of wafer waxing grinding, the ceramic plate edge is cleaned；
3) ceramic disk is heated, melts wax, waxed while wax melts toward crystal round fringes surrounding；
4) heating is carried out 10 minutes to the ceramic disk and pushes the area Xia La to wax the wafer of the ceramic disk；
5) impeller is provided, wafer is gently pushed to lower wax using the impeller from the area Xia La.
2. wax method under a kind of wafer of application surface rough type ceramic disk as described in claim 1, it is characterised in that: described
The ceramic disk in step 3) is heated to 80 DEG C.
3. wax method under a kind of wafer of application surface rough type ceramic disk as described in claim 1, it is characterised in that: described
The impeller in step 5) is swab stick.
4. a kind of wax method under wafer of application surface rough type ceramic disk, it is characterised in that: the lower wax method includes following
Step:
1) ceramic disk is provided, the ceramic disk is used for wafer Wax enhancement, and the ceramic disk surface roughness is 0.3；
2) after the completion of wafer waxing grinding, the ceramic plate edge is cleaned；
3) ceramic disk is heated, melts wax；
4) impeller is provided, is heated after ten minutes in the ceramic disk, is gently pushed wafer using the impeller, can push
It can carry out next step；
5) ceramic disk is placed in the going in wax liquor of heating water bath, downward by backside of wafer, a culture is placed under wafer
Ware catches wafer after being detached to wax under wafer；
6) ceramic disk is taken out every half an hour and gently push wafer using the impeller, remove wafer i.e. if easily pushing
Achievable lower wax process, continues to impregnate and repeat above operation, it is direct to will appear wafer in soaking process if it can not push
Fall off the case where lower wax process is completed in culture dish.
5. wax method under a kind of wafer of application surface rough type ceramic disk as claimed in claim 4, it is characterised in that: described
The ceramic disk in step 3) is heated to 80 DEG C.
6. wax method under a kind of wafer of application surface rough type ceramic disk as claimed in claim 4, it is characterised in that: described
The impeller in step 4) and step 7) is swab stick.
7. wax method under a kind of wafer of application surface rough type ceramic disk as claimed in claim 4, it is characterised in that: described
Water bath heating temperature in step 5) is 80 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910598991.0A CN110349867B (en) | 2019-07-04 | 2019-07-04 | Wafer waxing method applying rough-surface ceramic disc |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910598991.0A CN110349867B (en) | 2019-07-04 | 2019-07-04 | Wafer waxing method applying rough-surface ceramic disc |
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| CN110349867A true CN110349867A (en) | 2019-10-18 |
| CN110349867B CN110349867B (en) | 2020-11-27 |
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1217104A2 (en) * | 1996-03-25 | 2002-06-26 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafers |
| JP2002326157A (en) * | 2001-04-27 | 2002-11-12 | Kyocera Corp | Plate for polishing wafer, and method for machining the same |
| TW544777B (en) * | 2002-08-20 | 2003-08-01 | Advanced Wireless Semiconducto | Residual wax removal process for thin wafer and apparatus thereof |
| CN201077033Y (en) * | 2007-04-19 | 2008-06-25 | 刘培东 | Integral polishing ceramic plate for silicon chip wax-free polishing |
| CN102490439A (en) * | 2011-12-15 | 2012-06-13 | 天津中环领先材料技术有限公司 | Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor) |
| CN103078015A (en) * | 2011-10-26 | 2013-05-01 | 大连美明外延片科技有限公司 | Light emitting diode grinding and wax pastingcharging method |
| JP2014144500A (en) * | 2013-01-28 | 2014-08-14 | Sumitomo Metal Mining Co Ltd | One-side polishing method for sapphire wafer, and method for producing sapphire wafer |
| US20140360671A1 (en) * | 2012-03-22 | 2014-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for separating wafer from carrier |
| CN204102875U (en) * | 2014-09-30 | 2015-01-14 | 安徽三安光电有限公司 | A kind of wafer fixed disk |
| CN107803744A (en) * | 2017-09-26 | 2018-03-16 | 合肥新汇成微电子有限公司 | A kind of method for grinding rear surface of semiconductor crystal wafer |
| CN107932254A (en) * | 2017-11-01 | 2018-04-20 | 福建晶安光电有限公司 | A kind of method of ultra-thin wafers planarization processing clamping |
| CN109807695A (en) * | 2019-03-29 | 2019-05-28 | 苏州恒嘉晶体材料有限公司 | A kind of sapphire substrate sheet polishing method |
-
2019
- 2019-07-04 CN CN201910598991.0A patent/CN110349867B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1217104A2 (en) * | 1996-03-25 | 2002-06-26 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafers |
| JP2002326157A (en) * | 2001-04-27 | 2002-11-12 | Kyocera Corp | Plate for polishing wafer, and method for machining the same |
| TW544777B (en) * | 2002-08-20 | 2003-08-01 | Advanced Wireless Semiconducto | Residual wax removal process for thin wafer and apparatus thereof |
| CN201077033Y (en) * | 2007-04-19 | 2008-06-25 | 刘培东 | Integral polishing ceramic plate for silicon chip wax-free polishing |
| CN103078015A (en) * | 2011-10-26 | 2013-05-01 | 大连美明外延片科技有限公司 | Light emitting diode grinding and wax pastingcharging method |
| CN102490439A (en) * | 2011-12-15 | 2012-06-13 | 天津中环领先材料技术有限公司 | Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor) |
| US20140360671A1 (en) * | 2012-03-22 | 2014-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for separating wafer from carrier |
| JP2014144500A (en) * | 2013-01-28 | 2014-08-14 | Sumitomo Metal Mining Co Ltd | One-side polishing method for sapphire wafer, and method for producing sapphire wafer |
| CN204102875U (en) * | 2014-09-30 | 2015-01-14 | 安徽三安光电有限公司 | A kind of wafer fixed disk |
| CN107803744A (en) * | 2017-09-26 | 2018-03-16 | 合肥新汇成微电子有限公司 | A kind of method for grinding rear surface of semiconductor crystal wafer |
| CN107932254A (en) * | 2017-11-01 | 2018-04-20 | 福建晶安光电有限公司 | A kind of method of ultra-thin wafers planarization processing clamping |
| CN109807695A (en) * | 2019-03-29 | 2019-05-28 | 苏州恒嘉晶体材料有限公司 | A kind of sapphire substrate sheet polishing method |
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| CN110349867B (en) | 2020-11-27 |
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