TWI813999B - Hard material processing device and system thereof - Google Patents

Hard material processing device and system thereof Download PDF

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Publication number
TWI813999B
TWI813999B TW110118632A TW110118632A TWI813999B TW I813999 B TWI813999 B TW I813999B TW 110118632 A TW110118632 A TW 110118632A TW 110118632 A TW110118632 A TW 110118632A TW I813999 B TWI813999 B TW I813999B
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Taiwan
Prior art keywords
processed
hard material
processing
hardness
heating
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TW110118632A
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Chinese (zh)
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TW202245034A (en
Inventor
寇崇善
葉文勇
張伯昌
吳坤益
陳建勳
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日揚科技股份有限公司
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Priority to JP2021124137A priority Critical patent/JP7198881B2/en
Publication of TW202245034A publication Critical patent/TW202245034A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Powder Metallurgy (AREA)
  • Turning (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Paper (AREA)

Abstract

A hard material processing device is suitable for processing a product containing a hard material. The device comprises: a heating element for performing a first heating process on the product to heat the product to a first temperature sufficient to reduce the hardness of the hard material of the product, so as to temporarily reduce the hardness of the hard material of the product during the first heating process; and at least one first processing element for simultaneously performing a first processing process on the product that temporarily reduces the hardness of the hard material of the product while the heating element performs the first heating process on the product. Therefore, the processing speed and productivity can be increased, and the wear of the processing element can also be reduced.

Description

硬質材料加工裝置及其系統 Hard material processing device and system

本創作是有關於一種裝置及系統,特別是有關於一種硬質材料加工裝置及其系統。 The invention relates to a device and a system, in particular to a hard material processing device and a system thereof.

近年來,由於半導體技術不斷地蓬勃發展,使得科技類產品得以大步躍進。在半導體製程中,常使用加工元件對晶圓等材料進行切割、研磨或拋光等加工程序。半導體材料,例如碳化矽(SiC),具有寬能帶隙性質、高硬度、高導熱率以及化學惰性性質等優點,因此是製備高溫電子元件、高頻大功率元件更為理想的材料。然而碳化矽的高硬度特性,卻不易於切片、研磨或拋光等加工程序的進行,亦會對加工元件等刀具造成磨損。因此,如何提升高硬度半導體材料的加工效率及品質,實屬當前重要研發課題之一。 In recent years, due to the continuous vigorous development of semiconductor technology, technological products have made great strides. In the semiconductor manufacturing process, processing components are often used to perform cutting, grinding or polishing of materials such as wafers. Semiconductor materials, such as silicon carbide (SiC), have the advantages of wide energy band gap, high hardness, high thermal conductivity and chemical inertness. Therefore, they are more ideal materials for preparing high-temperature electronic components and high-frequency high-power components. However, the high hardness of silicon carbide makes it difficult to perform processing procedures such as slicing, grinding or polishing, and will also cause wear to cutting tools such as processing components. Therefore, how to improve the processing efficiency and quality of high-hardness semiconductor materials is one of the current important research and development topics.

有鑑於上述習知技藝之問題,本創作之一目的就是在提供一種硬質材料加工裝置及其系統,以提高加工速度、提升產能,並能減少加工元件的磨損。 In view of the above-mentioned problems in conventional techniques, one purpose of this invention is to provide a hard material processing device and its system to increase processing speed, increase productivity, and reduce wear of processing components.

為達前述目的,本創作提出一種硬質材料加工裝置,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,藉以於進行該第一加熱程序時暫時性降低該待加工物之該硬質材料之該硬度;以及至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序。 In order to achieve the above purpose, this invention proposes a hard material processing device, which is suitable for an object to be processed containing hard materials, and at least includes: a heating element, which performs a first heating process on the object to be processed, and heats the object to be processed. The object to be processed is heated to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, thereby temporarily reducing the hardness of the hard material of the object to be processed while performing the first heating process; and at least one The first processing element, when the heating element performs the first heating procedure on the object to be processed, the first processing element simultaneously performs a first processing procedure on the object to be processed that temporarily reduces the hardness of the hard material. .

其中,該第一加工程序為切割、研磨及/或拋光程序。 Wherein, the first processing procedure is a cutting, grinding and/or polishing procedure.

其中,該第一加工元件係於一含油環境中對該待加工物進行該第一加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。 Wherein, the first processing element performs the first processing procedure on the object to be processed in an oil-containing environment, and the oil-containing environment contains high-temperature resistant oil that can withstand the first temperature.

其中,該第一溫度為大於攝氏100度。 Wherein, the first temperature is greater than 100 degrees Celsius.

其中,該待加工物之該硬質材料為碳化矽,且該第一加工元件對該待加工物進行該第一加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序,使得該硬質材料之該硬度暫時性降低至接近矽之硬度。 Wherein, the hard material of the object to be processed is silicon carbide, and when the first processing element performs the first processing procedure on the object to be processed, the heating element simultaneously performs the first heating procedure on the object to be processed, The hardness of the hard material is temporarily reduced to the hardness close to silicon.

其中,該待加工物為碳化矽錠。 Wherein, the object to be processed is silicon carbide ingot.

其中,該加熱元件於該第一加熱程序係接觸式或非接觸式加熱該待加工物。 Wherein, the heating element heats the object to be processed in a contact or non-contact manner in the first heating process.

其中,該加熱元件為射頻加熱元件或微波加熱元件。 Wherein, the heating element is a radio frequency heating element or a microwave heating element.

本創作另提出一種硬質材料加工系統,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序及一第二加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,藉以於進行該第一加熱程序及該第二加熱程序時暫 時性降低該待加工物之該硬質材料之該硬度;至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序;以及至少一第二加工元件,在該加熱元件對該待加工物進行該第二加熱程序時,該第二加工元件係同時對已經過該第一加工程序且暫時性降低該硬質材料之該硬度之該待加工物進行一第二加工程序。 This invention also proposes a hard material processing system, which is suitable for an object to be processed containing hard materials, and at least includes: a heating element, which performs a first heating program and a second heating program on the object to be processed, The object to be processed is heated to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, so as to temporarily perform the first heating process and the second heating process. Temporarily reduce the hardness of the hard material of the object to be processed; at least one first processing element, when the heating element performs the first heating process on the object to be processed, the first processing element simultaneously temporarily reduces the hardness of the hard material of the object to be processed. The object to be processed with the hardness of the hard material undergoes a first processing procedure; and at least one second processing element. When the heating element performs the second heating procedure for the object to be processed, the second processing element is simultaneously A second processing procedure is performed on the object to be processed that has gone through the first processing procedure and temporarily reduced the hardness of the hard material.

本創作之硬質材料加工系統,更包含至少一清潔元件,在該待加工物經過該第一加工程序及/或該第二加工程序之後,該清潔元件係對該待加工物進行一清潔程序。 The hard material processing system of the present invention further includes at least one cleaning element. After the object to be processed passes through the first processing procedure and/or the second processing procedure, the cleaning element performs a cleaning process on the object to be processed.

其中,該第一加工程序為切割程序,該第二加工程序為研磨及/或拋光程序。 Wherein, the first processing procedure is a cutting procedure, and the second processing procedure is a grinding and/or polishing procedure.

其中,該第一加工元件及/或該第二加工元件係於一含油環境中對該待加工物進行該第一加工程序及/或該第二加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。 Wherein, the first processing element and/or the second processing element perform the first processing procedure and/or the second processing procedure on the object to be processed in an oil-containing environment, and the oil-containing environment contains materials that can withstand the third processing procedure. One temperature resistant oil.

其中,該第一溫度為大於攝氏100度。 Wherein, the first temperature is greater than 100 degrees Celsius.

其中,該待加工物之該硬質材料為碳化矽,且該第一加工元件及/或該第二加工元件對該待加工物進行該第一加工程序及/或該第二加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序及/或該第二加熱程序,使得該硬質材料之該硬度暫時性降低至接近矽之硬度。 Wherein, the hard material of the object to be processed is silicon carbide, and when the first processing element and/or the second processing element perform the first processing procedure and/or the second processing procedure on the object to be processed, the The heating element simultaneously performs the first heating process and/or the second heating process on the object to be processed, so that the hardness of the hard material is temporarily reduced to a hardness close to that of silicon.

其中,該待加工物為碳化矽錠。 Wherein, the object to be processed is silicon carbide ingot.

其中,該加熱元件於該第一加熱程序及/或該第二加熱程序係接觸式或非接觸式加熱該待加工物。 Wherein, the heating element heats the object to be processed in a contact or non-contact manner during the first heating process and/or the second heating process.

其中,該加熱元件為射頻加熱元件或微波加熱元件。 Wherein, the heating element is a radio frequency heating element or a microwave heating element.

承上所述,依本創作之硬質材料加工裝置及其系統,其可具有一或多個下述優點: Based on the above, the hard material processing device and its system according to the invention can have one or more of the following advantages:

(1)藉由對待加工物進行加熱,以降低待加工物中硬質材料的硬度,因此有利於加工元件進行切割、研磨及/或拋光等程序,可以提高加工速度、提升產能,並能減少加工元件的磨耗。 (1) By heating the object to be processed, the hardness of the hard materials in the object to be processed is reduced, which is beneficial to the cutting, grinding and/or polishing of processing components, which can increase the processing speed, increase productivity, and reduce processing costs. Component wear.

(2)傳統切割方式在完成後需再進行回火(加熱),以減少應力(stress)。而本創作可不需再次回火,可以減少操作程序及時間成本。 (2) Traditional cutting methods require tempering (heating) after completion to reduce stress. This creation does not require tempering again, which can reduce operating procedures and time costs.

(3)以相同刀具為例,本創作在單位時間的產出量大於傳統技術。 (3) Taking the same tool as an example, the output per unit time of this creation is greater than that of traditional technology.

10:線鋸切割機 10: Scroll saw cutting machine

20:研磨拋光機 20: Grinding and polishing machine

30:射頻加熱元件 30: Radio frequency heating element

40:承載件 40: Bearing part

50:抽氣裝置 50: Air extraction device

60:潤滑劑 60: Lubricant

100:碳化矽錠 100: Silicon carbide ingot

102:碳化矽切片 102: Silicon carbide slices

200:含油環境 200: Oily environment

S10:切割程序 S10: Cutting procedure

S21、S22、S23:清潔程序 S21, S22, S23: Cleaning procedure

S30:研磨程序 S30: Grinding program

S40:拋光程序 S40: Polishing procedure

圖1為本創作之硬質材料加工裝置之第一實施例之示意圖。 Figure 1 is a schematic diagram of the first embodiment of the hard material processing device of the present invention.

圖2為本創作之硬質材料加工裝置之第二實施例之示意圖。 Figure 2 is a schematic diagram of the second embodiment of the hard material processing device of the present invention.

圖3為本創作之硬質材料加工裝置之第三實施例之示意圖。 Figure 3 is a schematic diagram of the third embodiment of the hard material processing device of the present invention.

圖4為本創作之硬質材料加工裝置之第四實施例之示意圖。 Figure 4 is a schematic diagram of the fourth embodiment of the hard material processing device of the present invention.

圖5為本創作之硬質材料加工系統之加工流程圖。 Figure 5 is a processing flow chart of the hard material processing system of this creation.

為利瞭解本創作之技術特徵、內容與優點及其所能達成之功效,茲將本創作配合圖式,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本創作實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實 施上的權利範圍。此外,為使便於理解,下述實施例中的相同元件係以相同的符號標示來說明。 In order to facilitate understanding of the technical features, content and advantages of this invention and the effects it can achieve, this invention is described in detail below with diagrams and in the form of expressions of embodiments. The purpose of the diagrams used is only They are for illustration and auxiliary instructions, and may not represent the actual proportions and precise configurations of this creation after implementation. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of this creation. scope of rights. In addition, to facilitate understanding, the same elements in the following embodiments are labeled with the same symbols for explanation.

另外,在全篇說明書與申請專利範圍所使用的用詞,除有特別註明外,通常具有每個用詞使用在此領域中、在此揭露的內容中與特殊內容中的平常意義。某些用以描述本創作的用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本創作的描述上額外的引導。 In addition, unless otherwise noted, the terms used throughout the specification and patent application generally have the ordinary meanings of each term used in the field, the content disclosed herein, and the specific content. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance in describing the invention.

關於本文中如使用“第一”、“第二”、“第三”等,並非特別指稱次序或順位的意思,亦非用以限定本創作,其僅僅是為了區別以相同技術用語描述的組件或操作而已。 The use of "first", "second", "third", etc. in this article does not specifically refer to the order or sequence, nor is it used to limit the present invention. It is only used to distinguish components described by the same technical terms. Or just an operation.

其次,在本文中如使用用詞“包含”、“包括”、“具有”、“含有”等,其均為開放性的用語,即意指包含但不限於。 Secondly, if the words "include", "includes", "have", "contains", etc. are used in this article, they are all open terms, which means including but not limited to.

本創作之硬質材料加工裝置,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,加熱元件係對待加工物進行一第一加熱程序,將待加工物加熱至足以降低待加工物之硬質材料之硬度之一第一溫度,藉以於進行第一加熱程序時暫時性降低待加工物之硬質材料之硬度;以及至少一第一加工元件,在加熱元件對待加工物進行第一加熱程序時,第一加工元件係同時對暫時性降低硬質材料之硬度之待加工物進行一第一加工程序。本創作中的硬質材料可例如為碳化矽,本創作中的待加工物可例如為碳化矽錠(SIC Ingot)100,但不限定於此。 The hard material processing device of this invention is suitable for an object to be processed containing hard materials, and at least includes: a heating element. The heating element performs a first heating process on the object to be processed, and heats the object to be processed to a level sufficient to reduce the temperature of the object to be processed. a first temperature of the hard material of the hard material, so as to temporarily reduce the hardness of the hard material of the object to be processed when the first heating process is performed; and at least one first processing element, when the heating element performs the first heating process of the object to be processed At the same time, the first processing element performs a first processing procedure on the object to be processed that temporarily reduces the hardness of the hard material. The hard material in this invention can be, for example, silicon carbide, and the object to be processed in this invention can be, for example, silicon carbide ingot (SIC Ingot) 100, but it is not limited thereto.

第一加工元件可例如為線鋸切割機(Wire-saw slicing machine)、研磨機(Grinding machine)或是拋光機(Polishing machine)。第一加工程序則可例如為切割、研磨及/或拋光程序。加熱元件可例如為射頻(Radio Frequency,RF)加 熱元件或微波加熱元件,頻率例如為1KHz至10GHz。本創作之加熱元件係用以對待加工物進行加熱,故本創作雖以射頻加熱元件或微波加熱元件為例,但本創作並不侷限於上述舉例。換言之,任何加熱元件只要能夠對待加工物進行加熱,均可適用於本創作。如圖1所示,以射頻加熱元件30為例,本創作透過射頻加熱元件30來加熱碳化矽錠100,可以讓碳化矽錠100的硬度降低,因此本創作可以更容易地對碳化矽錠100進行加工處理,例如再藉由線鋸切割機10來將碳化矽錠100切割成碳化矽切片102(第一加工程序),可以更輕易地進行切割程序。其中,碳化矽錠100可例如為圓柱形,但不限定於此。此外,本創作雖較佳為讓碳化矽錠100的硬度降低至接近矽(Si)之硬度,惟只要能夠使得碳化矽錠100的硬度降低,均有助於後續加工程序之進行。舉例而言,當碳化矽錠100被加熱至攝氏200度時,其硬度值仍約為25GPa,但是當碳化矽錠100被加熱至攝氏350度時,其硬度值已降至約21.5GPa,且當碳化矽錠100被加熱至攝氏500度時,其硬度值僅剩約15GPa。同理,若碳化矽錠100被加熱至攝氏600度時,則碳化矽錠100的硬度(14Gpa)降低至接近或相同於矽的硬度(14Gpa),因此第一加工元件可採用相同於對矽錠進行加工程序之加工元件,藉以對碳化矽錠100進行第一加工程序。 The first processing element may be, for example, a wire-saw slicing machine, a grinding machine or a polishing machine. The first processing procedure may be, for example, cutting, grinding and/or polishing procedures. The heating element may be, for example, a Radio Frequency (RF) plus Thermal element or microwave heating element, frequency is 1KHz to 10GHz, for example. The heating element of this invention is used to heat the object to be processed. Therefore, although this invention uses radio frequency heating elements or microwave heating elements as examples, this invention is not limited to the above examples. In other words, any heating element can be suitable for this invention as long as it can heat the object to be processed. As shown in Figure 1, taking the radio frequency heating element 30 as an example, the invention uses the radio frequency heating element 30 to heat the silicon carbide ingot 100, which can reduce the hardness of the silicon carbide ingot 100. Therefore, the invention can more easily heat the silicon carbide ingot 100. Performing processing, for example, using the wire saw cutting machine 10 to cut the silicon carbide ingot 100 into silicon carbide slices 102 (first processing procedure), the cutting procedure can be performed more easily. The silicon carbide ingot 100 may be, for example, cylindrical, but is not limited thereto. In addition, although this invention preferably reduces the hardness of the silicon carbide ingot 100 to a hardness close to silicon (Si), as long as the hardness of the silicon carbide ingot 100 can be reduced, it will be helpful for subsequent processing procedures. For example, when the silicon carbide ingot 100 is heated to 200 degrees Celsius, its hardness value is still about 25 GPa, but when the silicon carbide ingot 100 is heated to 350 degrees Celsius, its hardness value has dropped to about 21.5 GPa, and When the silicon carbide ingot 100 is heated to 500 degrees Celsius, its hardness value is only about 15 GPa. Similarly, if the silicon carbide ingot 100 is heated to 600 degrees Celsius, the hardness of the silicon carbide ingot 100 (14 Gpa) is reduced to close to or the same as the hardness of silicon (14 Gpa). Therefore, the first processing element can be the same as that used for silicon. The ingot is a processing component for performing a processing procedure, thereby performing a first processing procedure on the silicon carbide ingot 100 .

另外,第一加工元件也可於含油環境200中對待加工物(即碳化矽錠100)進行第一加工程序,含油環境200係含有可承受第一溫度之一耐高溫油,且係例如為裝填有前述之耐高溫油之槽體。第一溫度為大於攝氏100度,第一溫度較佳介於攝氏200度至900度之間,但不限定於此。如圖2所示,可以將碳化矽錠100部分或全部置放於含油環境200中,較佳為將碳化矽錠100全部浸泡於含油環境200中,並透過射頻加熱元件30來加熱碳化矽錠100,使得碳化矽錠100的硬 度降低。其中,射頻加熱元件30可採用市面常見之射頻加熱元件,只要能夠對待加工物進行加熱均適用於本創作,故本創作並不侷限於特定廠牌或型號之射頻加熱元件。接著再藉由線鋸切割機10來將已降低硬度的碳化矽錠100切割成碳化矽切片102(第一加工程序),藉此可以使切割程序能夠更輕易地進行。其中,線鋸切割機10同樣可採用市面常見之線鋸切割機,只要能夠對待加工物進行切割均適用於本創作,故本創作並不侷限於特定廠牌或型號之線鋸切割機。而且,由於切割碳化矽錠100之切割機台屬習知技術且非本創作之技術重點所在,故此處不另贅述。上述含油環境200中可例如含有氟系之油品,其可承受上述加熱元件對待加工物所進行之第一加熱程序,且具有工作溫度範圍大、出色的耐極端高溫性能、耐化學腐蝕性能、寬廣的材料相容性、非凡的電絕緣性能、出色的成膜、承載能力和潤滑性能等特性,用以提供潤滑及均勻加熱的作用。上述之含有氟系之油品例如為氟素油(Per-Fluorinated Poly Ethers,PFPE),其分子結構例如由三種成分組成:碳(Carbon)21.6%、氧(Oxygen)9.4%、氟(Fluorine)69.0%。惟,上述含有氟系之油品雖以氟素油為例且雖以上述成分組成比例為例,惟本創作不限於此,只要含油環境200中的油品可耐高溫,即可適用於本創作中。 In addition, the first processing element can also perform the first processing procedure on the object to be processed (i.e., the silicon carbide ingot 100) in an oil-containing environment 200. The oil-containing environment 200 contains a high-temperature resistant oil that can withstand the first temperature, and is, for example, filling. There is the aforementioned high-temperature oil tank body. The first temperature is greater than 100 degrees Celsius, and the first temperature is preferably between 200 degrees Celsius and 900 degrees Celsius, but is not limited thereto. As shown in Figure 2, part or all of the silicon carbide ingot 100 can be placed in an oil-containing environment 200. Preferably, the entire silicon carbide ingot 100 is immersed in the oil-containing environment 200, and the silicon carbide ingot is heated through the radio frequency heating element 30. 100, making the silicon carbide ingot 100 harder degree decreased. Among them, the radio frequency heating element 30 can be a common radio frequency heating element on the market. As long as it can heat the object to be processed, it is suitable for this invention. Therefore, this invention is not limited to radio frequency heating elements of a specific brand or model. Then, the silicon carbide ingot 100 with reduced hardness is cut into silicon carbide slices 102 by the wire saw cutting machine 10 (first processing procedure), thereby making the cutting procedure easier to perform. Among them, the wire saw cutting machine 10 can also be a common wire saw cutting machine on the market. As long as it can cut the object to be processed, it is suitable for this invention. Therefore, this invention is not limited to a specific brand or model of wire saw cutting machine. Moreover, since the cutting machine for cutting the silicon carbide ingot 100 is a conventional technology and is not the technical focus of this invention, it will not be described again here. The above-mentioned oil-containing environment 200 may contain, for example, fluorine-based oil, which can withstand the first heating process of the object to be processed by the above-mentioned heating element, and has a wide operating temperature range, excellent extreme high temperature resistance, and chemical corrosion resistance. Broad material compatibility, extraordinary electrical insulation properties, excellent film formation, load-bearing capacity and lubrication properties are used to provide lubrication and uniform heating. The above-mentioned fluorine-containing oil is, for example, fluorinated oil (Per-Fluorinated Poly Ethers, PFPE). Its molecular structure is composed of three components: 21.6% carbon, 9.4% oxygen, and 69.0 fluorine. %. However, although the above-mentioned fluorine-containing oil products take fluorine oil as an example and the above-mentioned component composition ratio as an example, this invention is not limited to this. As long as the oil in the oil-containing environment 200 can withstand high temperatures, it can be applied to this invention. middle.

第一加工程序除了前述的切割程序外,也可以是研磨及/或拋光程序。易言之,本創作不侷限於先進行切割程序之後,再接續進行研磨及/或拋光程序。依據實際製程需求,本創作也可以不對待加工物進行切割程序,而是只進行研磨及/或拋光程序。如同前述之理由,本創作之研磨及/或拋光程序也可採用市面常見之研磨機及/或拋光機,例如化學機械研磨機(CMP),只要能夠對待加工物進行研磨及/或拋光均適用於本創作,故本創作並不侷限於特定廠牌或型號之研磨機及/或拋光機。而且,由於研磨及/或拋光碳化矽錠100之研磨及/或拋 光機台屬習知技術且非本創作之技術重點所在,故此處不另贅述。舉例來說,如圖3所示,可以將圖1的切割程序後所得之碳化矽切片102,置於承載件40上。承載件40可例如是具有孔洞的陶瓷板,因此可以透過抽氣裝置50(例如抽氣幫浦),來將碳化矽切片102固定在承載件40上,以便進行後續的研磨及/或拋光程序。並且,透過射頻加熱元件30來加熱碳化矽切片102,可以讓碳化矽切片102的硬度降低,因此有利於研磨拋光機20來對碳化矽切片102進行研磨及/或拋光程序。圖3中的射頻加熱元件30以置於承載件40下方為例,但不限定於此。射頻加熱元件30也可以設置於其他適當之位置,以便於對碳化矽切片102進行加熱以降低其硬度。另外,在進行研磨及/或拋光程序時,也可使用潤滑劑60。潤滑劑60可例如為任何含有氟系之油品,用以提供潤滑及均勻加熱的作用。 In addition to the aforementioned cutting procedure, the first processing procedure may also be a grinding and/or polishing procedure. In other words, the present invention is not limited to performing the cutting process first, followed by the grinding and/or polishing process. According to the actual process requirements, this invention may not perform a cutting process on the object to be processed, but only perform a grinding and/or polishing process. For the reasons mentioned above, the grinding and/or polishing process of this invention can also use common grinding machines and/or polishing machines on the market, such as chemical mechanical grinders (CMP), as long as they can grind and/or polish the object to be processed. This creation is not limited to specific brands or models of grinding machines and/or polishing machines. Moreover, due to the grinding and/or polishing of the silicon carbide ingot 100 The optical machine is a common technology and is not the technical focus of this creation, so it will not be described again here. For example, as shown in FIG. 3 , the silicon carbide slices 102 obtained after the cutting process in FIG. 1 can be placed on the carrier 40 . The carrier 40 can be, for example, a ceramic plate with holes, so the silicon carbide slices 102 can be fixed on the carrier 40 through an air extraction device 50 (such as an air pump) for subsequent grinding and/or polishing procedures. . In addition, heating the silicon carbide slice 102 through the radio frequency heating element 30 can reduce the hardness of the silicon carbide slice 102, which is beneficial to the grinding and polishing machine 20 for grinding and/or polishing the silicon carbide slice 102. The radio frequency heating element 30 in FIG. 3 is placed under the carrier 40 as an example, but is not limited to this. The radio frequency heating element 30 can also be disposed at other appropriate positions to heat the silicon carbide slice 102 to reduce its hardness. In addition, lubricant 60 may also be used during grinding and/or polishing procedures. The lubricant 60 can be, for example, any fluorine-containing oil to provide lubrication and uniform heating.

另外,如圖4所示,本創作也可以於含油環境200中對碳化矽切片102進行研磨及/或拋光程序。含油環境200係含有可承受第一溫度之一耐高溫油。第一溫度為大於攝氏100度,第一溫度較佳介於攝氏200度至900度之間,但不限定於此。舉例而言,本創作可將碳化矽切片102部分或全部置放於含油環境200中,較佳為將碳化矽切片102全部浸泡於含油環境200中,並透過射頻加熱元件30來加熱碳化矽切片102,使得碳化矽切片102的硬度降低。接著再藉由研磨拋光機20來對已降低硬度的碳化矽切片102進行研磨及/或拋光程序。如同前述,碳化矽切片102的硬度降低幅度並無特別限定。惟,若碳化矽切片102的硬度降低至接近或相同於矽的硬度,則本創作之研磨拋光機20可為相同於對矽片進行研磨及/或拋光程序之研磨及/或拋光機。圖4中的射頻加熱元件30以置於含油環境200外為例,但不限定於此。射頻加熱元件30也可以設置於其他適當之位置,以便於對碳化矽切片102進行加熱以降低其硬度。 In addition, as shown in FIG. 4 , in this invention, the silicon carbide slice 102 can also be ground and/or polished in an oil-containing environment 200 . Oily Environment Series 200 contains high-temperature oil that can withstand one of the first temperatures. The first temperature is greater than 100 degrees Celsius, and the first temperature is preferably between 200 degrees Celsius and 900 degrees Celsius, but is not limited thereto. For example, in this invention, part or all of the silicon carbide slices 102 can be placed in the oil-containing environment 200. It is better to immerse all the silicon carbide slices 102 in the oil-containing environment 200, and heat the silicon carbide slices through the radio frequency heating element 30. 102, causing the hardness of the silicon carbide slice 102 to decrease. Then, the silicon carbide slice 102 with reduced hardness is ground and/or polished by the grinding and polishing machine 20 . As mentioned above, the degree of reduction in hardness of the silicon carbide slice 102 is not particularly limited. However, if the hardness of the silicon carbide slice 102 is reduced to close to or the same as the hardness of silicon, the grinding and polishing machine 20 of the present invention can be a grinding and/or polishing machine that performs the same grinding and/or polishing process on the silicon wafer. The radio frequency heating element 30 in FIG. 4 is placed outside the oil-containing environment 200 as an example, but is not limited thereto. The radio frequency heating element 30 can also be disposed at other appropriate positions to heat the silicon carbide slice 102 to reduce its hardness.

在本創作中,加熱元件於第一加熱程序可以是接觸式或非接觸式加熱待加工物。舉例來說,射頻加熱元件30在對碳化矽錠100或是碳化矽切片102進行加熱時,可以是透過直接接觸碳化矽錠100或碳化矽切片102來進行加熱,或者是透過間接方式,例如透過含油環境200來對碳化矽錠100或碳化矽切片102進行加熱。由於本創作所屬技術領域中具有通常知識者依據本創作之揭示內容,應當可清楚得知如何將射頻加熱元件30擺置於含油環境200的外部或內部,且可清楚得知如何透過直接接觸或間接方式對碳化矽錠100或碳化矽切片102進行加熱,故此處不再贅述。 In the present invention, the heating element can heat the object to be processed in a contact or non-contact manner in the first heating process. For example, when the radio frequency heating element 30 heats the silicon carbide ingot 100 or the silicon carbide slices 102, the heating can be performed by directly contacting the silicon carbide ingot 100 or the silicon carbide slices 102, or through an indirect method, such as through The oil-containing environment 200 is used to heat the silicon carbide ingot 100 or silicon carbide slices 102 . Based on the disclosure of this invention, a person with ordinary knowledge in the technical field of this invention should be able to clearly understand how to place the radio frequency heating element 30 outside or inside the oil-containing environment 200, and how to place it through direct contact or The silicon carbide ingot 100 or the silicon carbide slice 102 is heated in an indirect manner, so no details are given here.

本創作另提出一種硬質材料加工系統,其係例如由多個前述之硬質材料加工裝置組成以分別進行多個前述之加工程序,或者由單一個前述之硬質材料加工裝置組成以分別進行多個前述之加工程序。本創作之硬質材料加工系統適用於加工處理含有硬質材料之一待加工物,至少包含:一加熱元件,加熱元件係對待加工物進行一第一加熱程序及一第二加熱程序,將待加工物加熱至足以降低待加工物之硬質材料之硬度之一第一溫度,藉以於進行第一加熱程序及第二加熱程序時暫時性降低待加工物之硬質材料之硬度;至少一第一加工元件,在加熱元件對待加工物進行第一加熱程序時,第一加工元件係同時對暫時性降低硬質材料之硬度之待加工物進行一第一加工程序;以及至少一第二加工元件,在加熱元件對待加工物進行第二加熱程序時,第二加工元件係同時對已經過第一加工程序且暫時性降低硬質材料之硬度之待加工物進行一第二加工程序。其中,第一加工程序可例如為切割程序,且可透過如前述線鋸切割機10來進行切割程序。而第二加工程序可例如為研磨及/或拋光程序,且可透過如前述研磨拋光機20來進行研磨及/或拋光程序。 The present invention also proposes a hard material processing system, which is, for example, composed of a plurality of the aforementioned hard material processing devices to perform a plurality of the aforementioned processing procedures respectively, or is composed of a single aforementioned hard material processing device to perform a plurality of the aforementioned processing procedures respectively. The processing procedure. The hard material processing system of this invention is suitable for processing objects to be processed that contain hard materials. It at least includes: a heating element. The heating element performs a first heating program and a second heating program on the object to be processed. Heating to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed, thereby temporarily reducing the hardness of the hard material of the object to be processed during the first heating process and the second heating process; at least one first processing element, When the heating element performs a first heating process on the object to be processed, the first processing element simultaneously performs a first processing procedure on the object to be processed that temporarily reduces the hardness of the hard material; and at least one second processing element is used when the heating element is treating the object. When the workpiece undergoes the second heating process, the second processing element simultaneously performs a second processing process on the workpiece that has undergone the first processing process and temporarily reduces the hardness of the hard material. The first processing procedure may be, for example, a cutting procedure, and the cutting procedure may be performed by the aforementioned wire saw cutting machine 10 . The second processing procedure may be, for example, a grinding and/or polishing procedure, and the grinding and/or polishing procedure may be performed by the aforementioned grinding and polishing machine 20 .

第一加熱程序及第二加熱程序,可以由同一加熱元件,或不同的加熱元件所進行。舉例來說,可以使用射頻加熱元件30來進行第一加熱程序及第二加熱程序。另外,射頻加熱元件30可以置於一固定空間(例如前述的含油環境200)的內部或外部,且在此含油環境200中可以先進行切割程序且接著進行研磨及/或拋光程序。或者,兩射頻加熱元件30可以分別置於不同的位置,因此在進行切割程序先由其中一射頻加熱元件30進行加熱,並在完成切割程序後,可移送至另一位置(在移送過程中可選擇性地進行清潔程序),以使用另一射頻加熱元件30來進行加熱。前述的射頻加熱元件30也可以視實際需求,以微波加熱元件作替換使用。 The first heating process and the second heating process can be performed by the same heating element or different heating elements. For example, the radio frequency heating element 30 can be used to perform the first heating process and the second heating process. In addition, the radio frequency heating element 30 can be placed inside or outside a fixed space (such as the aforementioned oil-containing environment 200), and the cutting process and then the grinding and/or polishing process can be performed in the oil-containing environment 200. Alternatively, the two radio frequency heating elements 30 can be placed at different positions, so that one of the radio frequency heating elements 30 is heated first during the cutting process, and after the cutting process is completed, it can be moved to another position (the moving process can be Optionally perform a cleaning procedure) to use another radio frequency heating element 30 for heating. The aforementioned radio frequency heating element 30 can also be replaced with a microwave heating element depending on actual needs.

另外,本創作之硬質材料加工系統,更可以包含至少一清潔元件(圖中未繪示),在待加工物經過第一加工程序及/或第二加工程序之後,清潔元件係對待加工物進行一清潔程序。如圖5所示,在進行切割程序S10後,可以使用清潔元件對待加工物進行清潔程序S21,隨後進行研磨程序S30及清潔程序S22,接著再進行拋光程序S40及清潔程序S23。切割程序S10可採用圖1或圖2的方式來進行,但不限定於此。而研磨程序S30及拋光程序S40可採用圖3或圖4的方式來進行,且同樣不限定於此。透過進行清潔程序,可以將前次程序殘留於待加工物上的物質清洗乾淨,以便進行次一程序。其中,清潔程序中可使用電漿來進行清洗,或者也可使用一般去油酯的有機溶劑,例如丙酮,來進行清潔程序。本創作之清潔程序係用以對待加工物進行清潔,故本創作雖以電漿或有機溶劑為例,但本創作並不侷限於上述舉例。換言之,任何清潔程序只要能夠對待加工物進行清潔,均可適用於本創作。而且,本創作所屬技術領域中具有 通常知識者依據本創作之揭示內容,應當可清楚得知如何對待加工物進行清潔,故此處不再贅述。 In addition, the hard material processing system of the present invention can further include at least one cleaning element (not shown in the figure). After the object to be processed passes through the first processing procedure and/or the second processing procedure, the cleaning element is used to clean the object to be processed. A cleaning procedure. As shown in FIG. 5 , after the cutting process S10 , the cleaning element can be used to perform the cleaning process S21 on the object to be processed, followed by the grinding process S30 and the cleaning process S22 , and then the polishing process S40 and the cleaning process S23 . The cutting procedure S10 can be performed in the manner of Figure 1 or Figure 2, but is not limited thereto. The grinding process S30 and the polishing process S40 can be performed in the manner of Figure 3 or Figure 4, and are not limited thereto. By performing the cleaning process, the substances remaining on the object to be processed from the previous process can be cleaned so that the next process can be carried out. Among them, plasma can be used for cleaning in the cleaning process, or organic solvents such as acetone that generally remove oil esters can also be used for cleaning. The cleaning process of this invention is used to clean the object to be processed. Therefore, although this invention uses plasma or organic solvent as an example, this invention is not limited to the above examples. In other words, any cleaning procedure can be applied to this creation as long as it can clean the object to be processed. Moreover, the technical field to which this creation belongs has Generally, a person with knowledge should be able to clearly understand how to clean the workpiece based on the disclosed content of this creation, so no further details will be given here.

綜上所述,本創作之硬質材料加工裝置及其系統,其可具有一或多個下述優點:(1)藉由對待加工物進行加熱,以降低待加工物中硬質材料的硬度,因此有利於加工元件進行切割、研磨及/或拋光等程序,可以提高加工速度、提升產能,並能減少加工元件的磨耗。(2)傳統切割方式在完成後需再進行回火(加熱),以減少應力(stress)。而本創作可不需再次回火,可以減少操作程序及時間成本。(3)以相同刀具為例,本創作在單位時間的產出量大於傳統技術。 In summary, the hard material processing device and its system of the present invention can have one or more of the following advantages: (1) By heating the object to be processed, the hardness of the hard material in the object to be processed is reduced. Therefore, It is conducive to cutting, grinding and/or polishing of processing components, which can increase processing speed, increase production capacity, and reduce wear of processing components. (2) Traditional cutting methods require tempering (heating) after completion to reduce stress. This creation does not require tempering again, which can reduce operating procedures and time costs. (3) Taking the same tool as an example, the output per unit time of this creation is greater than that of traditional technology.

以上所述僅為舉例性,而非為限制性者。任何未脫離本創作之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above is only illustrative and not restrictive. Any equivalent modifications or changes that do not depart from the spirit and scope of this creation shall be included in the appended patent application scope.

10:線鋸切割機 10: Scroll saw cutting machine

30:射頻加熱元件 30: Radio frequency heating element

100:碳化矽錠 100: Silicon carbide ingot

200:含油環境 200: Oily environment

Claims (17)

一種硬質材料加工裝置,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,該第一溫度為大於等於攝氏200度,藉以於進行該第一加熱程序時暫時性降低該待加工物之該硬質材料之該硬度;以及至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序。 A hard material processing device, suitable for an object to be processed containing hard materials, at least includes: a heating element, which performs a first heating procedure on the object to be processed, and heats the object to be processed to a level sufficient to reduce the A first temperature of the hard material of the object to be processed, the first temperature being greater than or equal to 200 degrees Celsius, so as to temporarily reduce the hardness of the hard material of the object to be processed when performing the first heating process; And at least one first processing element. When the heating element performs the first heating process on the object to be processed, the first processing element simultaneously performs a first processing step on the object to be processed that temporarily reduces the hardness of the hard material. A processing procedure. 如請求項1所述之硬質材料加工裝置,其中該第一加工程序為切割、研磨及/或拋光程序。 The hard material processing device as claimed in claim 1, wherein the first processing procedure is a cutting, grinding and/or polishing procedure. 如請求項1所述之硬質材料加工裝置,其中該第一加工元件係對浸泡於一含油環境中之該待加工物進行該第一加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。 The hard material processing device as claimed in claim 1, wherein the first processing element performs the first processing procedure on the object to be processed immersed in an oily environment, and the oily environment contains a material that can withstand the first temperature. 1. High temperature resistant oil. 如請求項1所述之硬質材料加工裝置,其中該待加工物之該硬質材料之該硬度係暫時性降低為25Gpa至接近或相同於矽之硬度。 The hard material processing device as claimed in claim 1, wherein the hardness of the hard material of the object to be processed is temporarily reduced to 25 Gpa to be close to or the same as the hardness of silicon. 如請求項1、2、3或4所述之硬質材料加工裝置,其中該待加工物之該硬質材料為碳化矽,且該第一加工元件對該待加工物進行該第一加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序,使得該硬質材料之該硬度暫時性降低至接近或相同於矽之硬度。 The hard material processing device as described in claim 1, 2, 3 or 4, wherein the hard material of the object to be processed is silicon carbide, and when the first processing element performs the first processing procedure on the object to be processed, The heating element simultaneously performs the first heating process on the object to be processed, so that the hardness of the hard material is temporarily reduced to close to or the same as the hardness of silicon. 如請求項5所述之硬質材料加工裝置,其中該待加工物為碳化矽錠。 The hard material processing device of claim 5, wherein the object to be processed is a silicon carbide ingot. 如請求項1所述之硬質材料加工裝置,其中該加熱元件於該第一加熱程序係接觸式或非接觸式加熱該待加工物。 The hard material processing device as claimed in claim 1, wherein the heating element heats the object to be processed in a contact or non-contact manner in the first heating procedure. 如請求項1所述之硬質材料加工裝置,其中該加熱元件為射頻加熱元件或微波加熱元件。 The hard material processing device as claimed in claim 1, wherein the heating element is a radio frequency heating element or a microwave heating element. 一種硬質材料加工系統,適用於含有硬質材料之一待加工物,至少包含:一加熱元件,該加熱元件係對該待加工物進行一第一加熱程序及一第二加熱程序,將該待加工物加熱至足以降低該待加工物之該硬質材料之硬度之一第一溫度,該第一溫度為大於等於攝氏200度,藉以於進行該第一加熱程序及該第二加熱程序時暫時性降低該待加工物之該硬質材料之該硬度;至少一第一加工元件,在該加熱元件對該待加工物進行該第一加熱程序時,該第一加工元件係同時對暫時性降低該硬質材料之該硬度之該待加工物進行一第一加工程序;以及至少一第二加工元件,在該加熱元件對該待加工物進行該第二加熱程序時,該第二加工元件係同時對已經過該第一加工程序且暫時性降低該硬質材料之該硬度之該待加工物進行一第二加工程序。 A hard material processing system, suitable for an object to be processed containing hard materials, at least includes: a heating element, the heating element performs a first heating program and a second heating program on the object to be processed, and the object to be processed is The object is heated to a first temperature sufficient to reduce the hardness of the hard material of the object to be processed. The first temperature is greater than or equal to 200 degrees Celsius, so as to temporarily reduce the hardness of the object to be processed during the first heating process and the second heating process. The hardness of the hard material of the object to be processed; at least one first processing element. When the heating element performs the first heating process on the object to be processed, the first processing element temporarily reduces the hard material at the same time. The object to be processed with the hardness is subjected to a first processing procedure; and at least one second processing element. When the heating element performs the second heating procedure for the object to be processed, the second processing element simultaneously processes the object that has been processed. The first processing procedure and the object to be processed that temporarily reduces the hardness of the hard material undergoes a second processing procedure. 如請求項9所述之硬質材料加工系統,更包含至少一清潔元件,在該待加工物經過該第一加工程序及/或該第二加工程序之後,該清潔元件係對該待加工物進行一清潔程序。 The hard material processing system of claim 9 further includes at least one cleaning element. After the object to be processed passes through the first processing procedure and/or the second processing procedure, the cleaning element performs cleaning on the object to be processed. A cleaning procedure. 如請求項9所述之硬質材料加工系統,其中該第一加工程序為切割程序,該第二加工程序為研磨及/或拋光程序。 The hard material processing system of claim 9, wherein the first processing procedure is a cutting procedure, and the second processing procedure is a grinding and/or polishing procedure. 如請求項9所述之硬質材料加工系統,其中該第一加工元件及/或該第二加工元件係對浸泡於一含油環境中之該待加工物進行該第一加工程序及/或該第二加工程序,該含油環境係含有可承受該第一溫度之一耐高溫油。 The hard material processing system as claimed in claim 9, wherein the first processing element and/or the second processing element performs the first processing procedure and/or the third processing procedure on the object to be processed immersed in an oily environment. In the second processing procedure, the oil-containing environment contains high-temperature oil that can withstand the first temperature. 如請求項9所述之硬質材料加工系統,其中該待加工物之該硬質材料之該硬度係暫時性降低為25Gpa至接近或相同於矽之硬度。 The hard material processing system of claim 9, wherein the hardness of the hard material of the object to be processed is temporarily reduced to 25 Gpa to be close to or the same as the hardness of silicon. 如請求項9、10、11、12或13所述之硬質材料加工系統,其中該待加工物之該硬質材料為碳化矽,且該第一加工元件及/或該第二加工元件對該待加工物進行該第一加工程序及/或該第二加工程序時,該加熱元件係同時對該待加工物進行該第一加熱程序及/或該第二加熱程序,使得該硬質材料之該硬度暫時性降低至接近或相同於矽之硬度。 The hard material processing system as described in claim 9, 10, 11, 12 or 13, wherein the hard material of the object to be processed is silicon carbide, and the first processing element and/or the second processing element are suitable for the object to be processed. When the object to be processed undergoes the first processing program and/or the second processing program, the heating element simultaneously performs the first heating program and/or the second heating program on the object to be processed, so that the hardness of the hard material Temporarily reduced to close to or the same hardness as silicon. 如請求項14所述之硬質材料加工系統,其中該待加工物為碳化矽錠。 The hard material processing system of claim 14, wherein the object to be processed is a silicon carbide ingot. 如請求項9所述之硬質材料加工系統,其中該加熱元件於該第一加熱程序及/或該第二加熱程序係接觸式或非接觸式加熱該待加工物。 The hard material processing system of claim 9, wherein the heating element heats the object to be processed in a contact or non-contact manner during the first heating process and/or the second heating process. 如請求項9所述之硬質材料加工系統,其中該加熱元件為射頻加熱元件或微波加熱元件。 The hard material processing system of claim 9, wherein the heating element is a radio frequency heating element or a microwave heating element.
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TWI382893B (en) * 2005-07-07 2013-01-21 Univ Kumamoto Nat Univ Corp Substrate, grinding method of the same and grinding device
TWI409323B (en) * 2006-12-01 2013-09-21 Nippon Micro Coating Kk Hard crystalline substrate grinding methods and oily grinding slurry
US20170236905A1 (en) * 2015-11-26 2017-08-17 Toyo Tanso Co., Ltd. METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER

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